InSb Hall Element

HW-105A
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•High-sensitivity InSb Hall element.
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•Absolute Maximum Ratings

Item Symbol Limit Unit

Max. Input Current Ic Const. Current Drive 20 mA

Operating Temp. Range Topr. –40 to +110 ˚C

Storage Temp. Range Tstg. –40 to +125 ˚C

•Classification of Output Hall Voltage (VH)

Rank VH [ mV ] Conditions
•Electrical Characteristics(Ta=25˚C)
A 122 to 150
Item Symbol Conditions Min. Typ. Max. Unit
B 144 to 174
B=50mT, Vc=IV
Const. Voltage Drive C 168 to 204
Output Hall Voltage VH 122 274 mV Constant Voltage Drive
B=50mT, Vc=IV
D 196 to 236

Rin B=0mT, Ic=0.1mA E 228 to 274

Input Resistance 250 450
Note : When ordering, specify 3-rank or wider range(e·g·,BCD).
Output Resistance Rout B=0mT, Ic=0.1mA 250 450
•Input Current Derating Curve
Offset Voltage Vos B=0mT, Vc=IV –12 +12 mV
Input Resistance
20 Rin : 250 to 450
Temp. Coefficient of VH VH B=50mT, Ic=5mA –1.8 %/˚C
Input Current(mA)

Temp. Coefficient of Rin Rin B=0mT, Ic=0.1mA –1.8 %/˚C

10
Dielectric Strength 100V D.C 1.0 M

Notes : 1. VH = VHM – Vos (VHM:meter indication)

1
2. VH = VH (T1) X VH (T 3) – VH (T2)
(T3 – T2)
X 100
1
3. Rin = Rin (T1) X Rin (T 3) – Rin (T2)
(T – T )
X 100 0
3 2
–60 –40 – 20 0 20 40 60 80 100 120
T1 = 20˚C, T2 = 0˚C, T3 = 40˚C Ambient Temperature.(˚C)
•Dimensional Drawing (mm) Note : Rin of Hall element decreases rapidly as ambient temperature
increases. Ensure compliance with input current derating curve envelope,
2.1±0.1 throughout the operating temperature range.
0.4 1.3 0.4
0.3
•Input Voltage Derating Curve
0.25

2 1
Input Resistance
0 to 0.1 2.0 Rin : 250 to 450
1.25±0.1
2.1±0.2

Input Voltage(V)

5˚

5˚
3 4
0.1
1.0

5˚
0.25
+0.1
0.55 0

0.3

Pinning 0
5˚ –60 –40 – 20 0 20 40 60 80 100 120
(±) Ambient Temperature.(˚C)
Input 1(±) 3
Note : For constant-voltage drive, stay within this input voltage derating
(±)
Output 2(±) 4 curve envelope.

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 HW-105A

•Characteristic Curves
Rin-T VH-B
1400 350.0
Ic const
1200 300.0 Vc const

Output Voltage:VH(mV)
Input Resistance:Rin( )

Ic = 5 (mA)
1000 250.0 Vc = 1 (V)
Ic
Ta = 25 (˚C)
800 200.0

600 150.0
Vin c
400 100.0

200 50.0

0 0.0
–50 0 50 100 150 0 10 20 30 40 50
Ambient Temperature(˚C) Magnetic Flux Density B (mT)

VH-T VH-Vc, VH-Ic

1000 800
Ic const Ic const
Vc const Vc const
Output Voltage:VH(mV)
Output Voltage:VH(mV)

750 Ic = 5 (mA) 600 B = 50 (mT)

Vc = 1 (V) Ta = 25 (˚C) Ic
Ic B = 50 (mT)

500 400

Vin

250
Vin
200 g

5 10 15 20 Ic:(mA)
0 0
–50 0 50 100 150 0 0.5 1.0 1.5 2.0 Vc:(V)
Ambient Temperature(˚C) Ic (mA) Input Current
Vc (V) Input Voltage

VOS-T VOS-Vc, VOS-Ic

16.0 20
Ic const Ic const
14.0 18
Vc const Vc const
Ic 16
Offset Voltage:Vos(mV)

i
Offset Voltage:Vos(mV)

12.0 Ic = 5 (mA) B = 0 (mT)

Vc = 1 (V) 14 Ta = 25 (˚C)
10.0 B = 0 (mT)
12
8.0 10
Ic
6.0 8
6
4.0
Vin 4
2.0 Vin
2
0.0 5 10 15 Ic:(mA)
0
–50.0 0.0 50.0 100.0 150.0 0.5 1.0 1.5 Vc:(V)
Ambient Temperature(˚C) Ic (mA) Input Current
Vc (V) Input Voltage

*Magnetic Flux Density In This Example : Rin=350( ), Vos=1.9(mV), Vc=1(V)

1(mT)=10(G)

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