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PRL 104, 156806 (2010) PHYSICAL REVIEW LETTERS 16 APRIL 2010

Guided Plasmons in Graphene p-n Junctions


E. G. Mishchenko,1 A. V. Shytov,1,* and P. G. Silvestrov2
1
Department of Physics and Astronomy, University of Utah, Salt Lake City, Utah 84112, USA
2
Theoretische Physik III, Ruhr-Universität Bochum, 44780 Bochum, Germany
(Received 1 January 2010; published 16 April 2010)
Spatial separation of electrons and holes in graphene gives rise to the existence of plasmon waves
confined to the boundary region. A theory of such guided plasmon modes within hydrodynamics of
electron-hole liquid is developed. For plasmon wavelengths smaller than the size of charged domains,
plasmon dispersion is found to be ! / q1=4 . The frequency, velocity, and direction of propagation of
guided plasmon modes can be easily controlled by the external electric field. In the presence of a magnetic
field, a spectrum of additional gapless magnetoplasmon excitations is obtained. Our findings indicate that
graphene is a promising material for nanoplasmonics.

DOI: 10.1103/PhysRevLett.104.156806 PACS numbers: 73.23.b, 72.30.+q

Introduction.—Breakthrough progress in synthesis and In the present Letter, we investigate spectra of hydro-
characterization has made graphene [1] a promising object dynamic plasmons in spatially inhomogeneous graphene
for nanoelectronics. The operation of graphene-based tran- flakes. Realistic graphene samples are typically subject to
sistors [2] and other components would rely on the prop- disorder potential and mechanical strain [9] that lead to the
erties of its single-particle excitations—electrons and formation of charged electron and hole puddles [10] with
holes. However, one can also envisage a completely differ- boundaries between n and p regions being the lines of zero
ent set of applications which employ collective excitations, chemical potential. Moreover, controlled p-n junctions can
such as plasmons. Currently, plasmon excitations in me- be made with the help of metallic gates [11]. Also, p-n
tallic structures are a subject of nanoplasmonics, a new junctions can be created by applying electric field within
field which has emerged at the confluence of optics and the plane of a graphene flake, see Fig. 1(a). The field
condensed matter physics with one of the aims being the separates electrons and holes spatially in a way that allows
developing of plasmon-enhanced high resolution near-field control of both the amount of induced charge (and thus
imaging methods [3,4]. Another objective is possible uti- plasmon frequency) and spatial orientation of the junction
lization of plasmons in integrated optical circuits. (the direction of plasmon propagation).
However, perspectives of graphene for nanoplasmonics Below, we demonstrate that such p-n junctions can
are largely unexplored since plasmon modes of graphene guide plasmons. We show the existence of charge oscilla-
flakes have not been addressed so far. As our results tions which are localized at the junction and have the
indicate, a great amount of control over graphene plasmon amplitude decaying with the distance to the junction. For
properties makes it a very promising material for wavelengths shorter than the width of the charged domains,
applications. we find the plasmon spectrum of the form,
Fundamentally, the spectrum of collective charge oscil-
lations reflects the long-range nature of Coulomb interac-
tion. In conventional two dimensional systems, such as 2d 2d
those created in semiconducting heterostructures, plas- a) b)
mons are gapless, !2 ðqÞ ¼ 2e2 nq=m , with n and m
being electron density and effective mass, respectively [5].
Such oscillations can be treated hydrodynamically. In n n
clean graphene at zero temperature, the plasmon fre- p p
quency, !2 / jEF j, vanishes with decreasing the doping
level EF . It has been argued [6] that the interaction between
electrons and holes in the final state can modify the re-
sponse functions of Dirac fermions and open up a possi-
E0
bility for the propagation of charge oscillations at low
frequencies ! < qv, where v is electron velocity. Still,
FIG. 1 (color online). Two types of graphene p-n junctions:
hydrodynamic (! > qv) analog of conventional plasmons (a) field-induced, (b) gate-induced. Dot-dashed line indicates
remains absent unless either temperature is nonzero [7] or boundary between electron and hole regions and, correspond-
graphene is driven away from the charge neutrality point ingly, the direction of plasmon propagation. In case of field-
by doping or gating [8]. Expectedly, in both cases, plasmon induced junction, it is controlled by the direction of external
spectrum has the conventional form, !ðqÞ / q1=2 . electric field E0 .

0031-9007=10=104(15)=156806(4) 156806-1 Ó 2010 The American Physical Society


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PRL 104, 156806 (2010) PHYSICAL REVIEW LETTERS 16 APRIL 2010

sffiffiffiffiffiffiffiffiffiffiffi 0 ðxÞ ¼ 00 x, we observe that the integro-differential equa-


e 2 v qj0 j
!2n ðqÞ ¼ n 0
; (1) tion (5) acquires obvious scaling property. Introducing the
@ e variable  ¼ qx, we arrive at the plasmon spectrum in the
where 00 is the gradient of equilibrium charge density at form (1), with dimensionless constants n determined
the junction, v is electron velocity, and n ¼ 0; 1; 2; . . . from the eigenvalue problem
 qffiffiffiffiffiffi
enumerates
pffiffiffiffiffiffiffi the solutions. The lowest mode has 0 ¼ 2 d qffiffiffiffiffiffi d
4 2ð3=4Þ=ð1=4Þ  3:39.  pffiffiffiffi jj  jj
 d d
Below, we derive this result and discuss plasmon prop- Z1
erties for the two types of p-n junctions: electric field  d0 ðnÞ ð0 ÞK0 ðj  0 jÞ ¼ n ðnÞ ðÞ: (6)
controlled and gate controlled, as shown in Fig. 1. 1

Hydrodynamics of charge density oscillations.—We uti- Interestingly, this integro-differential equation allows a
lize the hydrodynamic approach to describe the motion of complete analytic solution, though the detailed analysis
charged Dirac fermions. The rate of change of electric is beyond the scope of this Letter. Our main findings are
current density J due to dynamic electric field E follows as follows. Solutions are enumerated by n ¼ 0; 1; 2; . . .
from the usual intraband Drude conductivity with the with even/odd numbers corresponding to even/odd density
corresponding density of states [12], profile, ðnÞ ðÞ ¼ ð1Þn ðnÞ ðÞ. Surprisingly, eigen-
2 values are doubly-degenerate and given by
_ tÞ ¼ e jðrÞjEðr; tÞ;
Jðr; (2)
@2 2n þ 1 3  7    ð4n  1Þ
2n ¼ 0  ; 2nþ1 ¼ 2n :
determined by the local value of chemical potential ðrÞ as 4n þ 1 1  5    ð4n  3Þ
measured from the Dirac point (positive for electrons and
At large distances, all modes have exponential depen-
negative for holes). Electric current is related to the varia-
dence, ðnÞ ðÞ  ejj , while at jj  1, even and odd
tion of charge density  by means of the continuity
equation, solutions
pffiffiffiffiffiffi exhibit ðoddÞ
different behavior,
pffiffiffiffiffiffi ðevenÞ  1 
const jj and   signðÞ= jj. The first pair of
_ tÞ þ r  Jðr; tÞ ¼ 0:
ðr; (3)
solutions (belonging to the lowest eigenvalue
R 0 ) in the
Finally, the variation of charge density produces electric Fourier representation ðnÞ ðkÞ ¼ dðnÞ ðÞeik ac-
field according to the Coulomb law [13], quires a simple form:
Z ðr0 ; tÞ
E ðr; tÞ ¼ r d2 r0 : (4) 1 k
jr  r0 j ð0Þ ðkÞ / ; ð1Þ ðkÞ / : (7)
ð1 þ k2 Þ3=4 ð1 þ k2 Þ3=4
Equations (2)–(4) give a closed system for plasmon ex-
Long wavelength, q  1=d.—In contrast to the above
citations in graphene flakes. We apply it to a p-n junction
result (1), plasmon spectrum at small q is sensitive to a
created in a strip infinite along the y axis (direction of
specific realization of the p-n junction. We address the
plasmon propagation). Using ðr; tÞ ¼ ðxÞ expðiqy 
long-wavelength behavior of plasmons in field controlled
i!tÞ, and eliminating E and J, we arrive at the equation for
junctions. We expect this case to be of more interest; in
the oscillating part of electron density,
addition, it allows a more complete description. Before
 sffiffiffiffiffiffiffiffiffiffiffiffiffiffi analyzing plasmons in this structure, we discuss the equi-
2e2 v d j0 ðxÞj d
! ðxÞ þ pffiffiffiffi
2
librium density profile. As shown in Fig. 1(a), the flake of
@ dx e dx
sffiffiffiffiffiffiffiffiffiffiffiffiffiffi width 2d is placed in external electric field E0 applied
j0 ðxÞj Z d along the x direction. The equilibrium density distribution
 q2 dx0 ðx0 ÞK0 ðjqjjx  x0 jÞ ¼ 0: (5) ðxÞ is found from
e d
rffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi Zd
Here, K0 is the modified Bessel function and 2d is the @v  x þ x0
E0 x þ sgnðxÞ j0 ðxÞj þ 2 dx0 0 ðx0 Þln ¼ 0;
width of graphene flake. Within the Thomas-Fermi ap- e e 0 jx  x0 j
proximation, equilibrium charge density 0 ðxÞ is related (8)
to the chemical potential via 0 ðxÞ ¼ sgnðÞe2 ðxÞ=
@2 v2 (electron charge is taken to be e). This follows where it is used that 0 ðxÞ ¼ 0 ðxÞ. Prior to solving
from the condition that the electrochemical potential Eq. (8), it is instructive to analyze validity of the semiclas-
ðxÞ  eðxÞ is constant throughout the system. The so- sical approach. The first condition implies that the change
lutions of Eq. (5) will now be considered for large and of the electron wavelength is smooth on the scale of itself,
small plasmon momenta separately. d=dxð@v=Þ  1. Estimating ðxÞ  eE0 x, we obtain
Short wavelength, q  1=d.—In this case, the decay of that the distance to the p-n junction line (x ¼ 0) should
plasmon density ðxÞ occurs over a distance much exceed the characteristic electric field length lE ¼
pffiffiffiffiffiffiffiffiffiffiffi
smaller than the width of the system and the limits of e=E0  x. The second condition requires that the elec-
integration in Eq. (5) can be extended to infinity. tron wavelength is small compared with the width of the
Assuming [cf. Eq. (10) below] the linear dependence, system, d  @v=. Noting that in graphene @v  e2 , we
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PRL 104, 156806 (2010) PHYSICAL REVIEW LETTERS 16 APRIL 2010

can rewrite this second condition simply as lE  d. Thus, where n are the eigenvalues of the equation,
the Thomas-Fermi equation (8) for the equilibrium charge pffiffiffiffiffiffi
density and the hydrodynamic equation (5) for its variation 2 d jj Z 1 ðnÞ ð0 Þ
pffiffiffiffi d0 ¼ n ðnÞ ðÞ: (15)
are applicable as long as  d ð1   Þ
2 1=4
1   0
lE  d; q  1=lE : (9) The zeroth mode 0 ¼ 0, see Eq. (13), is found analyti-
pffiffiffiffiffiffiffiffiffiffiffiffiffiffi
However, the ratio of q and 1=d can be arbitrary. For a cally: ð0Þ / 1= 1  2 . It describes charge distribution
moderate external electric field 104 V=m, the value of in the strip in response to a (uniform along x direction and
electric length lE  0:4 m, and the first of the conditions smooth along y direction) change of its chemical potential
(9) is satisfied easily for micron-sized samples. [15]. Other solutions of Eq. (15) are found numerically
Analytic solution of Eq. (8) is possible when the second 1 ¼ 1:41, 2 ¼ 6:49, 3 ¼ 6:75; . . . . With increasing n,
term is small, in which case the charge density is [14] the eigenmodes of integro-differential equation (15) oscil-
late faster, but in general do not follow the oscillation
E0 x theorem familiar from quantum mechanics. In particular,
0 ðxÞ ¼ pffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi : (10)
d2  x2 the solutions with n ¼ 0 and n ¼ 3 are even while n ¼ 1,
n ¼ 2 are odd [16].
Substituting this expression back into Eq. (8), we observe
Finally, we mention the case of a gate-controlled p-n
that the second term is indeed negligible as long as x 
junction, Fig. 1(b). The equilibrium density profile is linear
l2E =d. This is assured whenever the conditions (9) are
near x ¼ 0 and saturates for large jxj [17]. Equation (1) is
satisfied. It is also worth pointing out that Eq. (10) justifies
still applicable for q > 1=d. In the limit q < 1=d, one
the linear approximation for the charge density used in
should take into account the screening of long-range
deriving Eq. (1) for q  1=d, with 00 =e ¼ 1=ðl2E dÞ.
Coulomb interaction by metallic gates. In this case, the
We now turn to the analysis of plasma oscillations logarithm in the spectrum of the gapless plasmon disap-
propagating on top of the density distribution, Eq. (10). pears, and the lowest mode Eq. (13) becomes soundlike.
For small momenta, q  1=d, electric field extends be- Magnetoplasmons.—If external magnetic field B is ap-
yond the width of the flake and Eq. (5) needs to be plied perpendicularly to the plane of graphene, the plasmon
supplemented with the boundary condition, which ensures spectra acquire new modes. The equation of motion (2)
that electric field (and thus the current) vanishes at the should now be modified to include the Lorentz force,
edges:
2 2
Zd ðxÞ _ tÞ ¼ e jðxÞjEðr; tÞ  ev J  B:
Jðr; (16)
P dx ¼ 0: (11) @ 2 cðxÞ
d x d
The spectrum of the lowest symmetric mode can be most The relative coefficient between electric and magnetic
easily found by integrating Eq. (5) across the width of the terms in this equation follows from the expression for the
flake. The first term in the brackets will then vanish exactly Lorentz force acting on a single particle. The last term has
due to the boundary condition (11). The remaining integral opposite sign for electrons and holes. Note that the fre-
can now be calculated to the logarithmic accuracy with the quency of cyclotron motion !B ðxÞ ¼ ev2 B=cðxÞ in gra-
help of the approximation K0 ðqjx  x0 jÞ ¼  lnqjx  x0 j: phene p-n junctions is position dependent. The remaining
Eqs. (3) and (4) are intact in the presence of magnetic field.
sffiffiffiffiffiffiffiffiffiffiffiffiffiffi
Zd j0 ðxÞj 2d2 ð3=4Þ The boundary condition requires now the vanishing of the
dx lnðqjx  x0 jÞ  pffiffiffiffi lnðqdÞ: (12) normal component of electric current at the boundary,
d e lE  rather than simply vanishing of the electric field, as in
Equations (5)Rand (12) combine to give the equation, Eq. (11). Eliminating J and E, we arrive at the general-
½!2  !20 ðqÞ
dd dxðxÞ ¼ 0, that yields the dispersion ization of Eq. (5),
of the gapless symmetric plasmon,  
2e2 2 q d d
ðxÞ þ q Z  ð!B ZÞ0  Z
4e2 vd 2  ! dx dx
!20 ðqÞ ¼ 2 ð3=4Þ q lnð1=qdÞ; (13) Zd
@lE
 dx0 ðx0 ÞK0 ðjqjjx  x0 jÞ ¼ 0; (17)
d
reminiscent of the plasmon spectrum in quasi-one-
dimensional wires. The R remaining modes, n 1, are where ZðxÞ ¼ jðxÞj=ð!2B ðxÞ  !2 Þ.
gapped. For these modes, dd dxðxÞ ¼ 0, and the sim- The most interesting effect described by Eq. (17) is the
ple procedure of integrating Eq. (5) over the width of the appearance of a set of new modes, chiral magnetoplas-
flake is not useful. Instead, the equation for the nth fre- mons, similar to those considered in Ref. [18] for conven-
quency gap can be obtained by setting q ¼ 0 in Eq. (5), tional 2D electron systems with smooth boundaries. To find
their dispersion in strong magnetic fields, when ! 
e2 v !B ðxÞ (the exact condition is given below), one should
!2n ð0Þ ¼ n ; (14)
@lE d retain only the second term in Eq. (17). Noticing that
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PRL 104, 156806 (2010) PHYSICAL REVIEW LETTERS 16 APRIL 2010

pffiffiffiffiffiffiffiffiffiffiffiffiffiffi istic samples containing electron-hole puddles. A high


ð!B ZÞ0 ¼ l2B 00 ðxÞ=e ¼ l2B =ðl2E dÞ, where lB ¼ @c=eB
is the magnetic length, we arrive at the integral equation degree of experimental control should make them of spe-
cial interest to nanoplasmonics and electronics. Among the
2c q d0 ðxÞ Z d most promising applications of plasmons in p-n junctions,
 dx0 ðx0 ÞK0 ðjqjjx  x0 jÞ ¼ ðxÞ:
B ! dx d we envisage a possibility of a ‘‘plasmon transistor’’ [3]. In
(18) particular, by simply switching the direction of electric
field from across the flake to along it (and back), the
Since K0 is positive, propagation of magnetoplasmons with propagation of plasmons can be facilitated (or prevented).
q > 0 is quenched, indicative of their chiral property [19]. In addition, as follows from the above Eqs. (1) and (10), the
As seen from Eq. (18), the plasmon density ðxÞ is plasmon velocity can be controlled with simple change in
concentrated where 00 ðxÞ is the strongest. The derivative the magnitude of electric field. This is in a sharp contrast to
of the charge density in field-induced junctions (10) fea- plasmons in metallic nanostructures, whose spectra are
tures strong singularity near the edges of the flake. Thus, typically fixed once devices are fabricated.
low-frequency magnetoplasmon spectrum is strongly de- Useful discussions with M. Raikh and O. Starykh are
pendent on the microscopic regularization of this singular gratefully acknowledged. This work was supported by
behavior and is, therefore, beyond the scope of the DOE, Grant No. DE-FG02-06ER46313. P. G. S. was sup-
Thomas-Fermi approximation used throughout this Letter. ported by the SFB TR 12.
The gate-induced junctions, however, allow a rather
simple analytical description of these modes if we approxi-
mate that 00 ðxÞ ¼ e=l2E d for jxj d and 00 ðxÞ ¼ 0 for
jxj > d. The oscillating density ðxÞ then vanishes for
jxj > d. The solution inside the strip, jxj d, can be easily *Present address: School of Physics, University of Exeter,
EX4 4QL, U.K.
found for q  1=d, where one can assume the range of
[1] M. Wilson, Phys. Today 59, No. 1, 21 (2006).
integration in Eq. (18) to be infinite. The eigenfunctions of [2] A. K. Geim and K. S. Novoselov, Nature Mater. 6, 183
Eq. (18) are simply given by sin½q? ðx þ dÞ
, with the (2007).
values of q? ¼ n=2d determined from the condition, [3] H. A. Atwater, Sci. Am. 296, 56 (2007).
q ð dÞ ¼ 0. The spectrum of magnetoplasmons is then [4] S. A. Maier, Plasmonics: Fundamentals and Applications
(Springer, New York, 2007).
2e2 l2B q
!n ðqÞ ¼  pffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi ; n ¼ 1; 2; . . . : [5] F. Stern, Phys. Rev. Lett. 18, 546 (1967).
@lE d
2
q þ 2 n2 =4d2
2 [6] S. Gangadharaiah, A. M. Farid, and E. G. Mishchenko,
Phys. Rev. Lett. 100, 166802 (2008).
(19)
[7] O. Vafek, Phys. Rev. Lett. 97, 266406 (2006).
The magnetoplasmon spectrum (19) is derived under the [8] E. H. Hwang and S. Das Sarma, Phys. Rev. B 75, 205418
assumption that magnetic field is strong, !B ðdÞ  !, (2007).
which implies that lB  lE . In order to neglect the first [9] A. H. Castro Neto et al., Rev. Mod. Phys. 81, 109 (2009).
and third terms in the brackets in Eq. (17), one has to [10] J. Martin et al., Nature Phys. 4, 144 (2008).
[11] J. R. Williams, L. DiCarlo, and C. M. Marcus, Science
ensure that q  ðlE =lB Þ4 =d. This condition might turn
317, 638 (2007).
out to be more or less restrictive than the hydrodynamics [12] Rigorous derivation of Eq. (2) is based on the relativistic
condition q  1=lE , depending on the particular value of stress energy-momentum tensor, see L. D. Landau and
the ratio lB =lE . Note that the smallness of this ratio is not in E. M. Lifshitz, Fluid Mechanics (Butterworth-
contradiction to the nonquantized description of electron Heinemann, Oxford, 1987), Ch. 15; M. Mueller, L.
motion in magnetic filed. The latter is valid as long as the Fritz, S. Sachdev, and J. Schmalian, arXiv:0810.3657.
filling factor is large, eEd  !B ðdÞ, which means that [13] In the case of gate-controlled junctions, the image charges
lB  l2E =d. For magnetic field 1 T, and lB  25 nm, induced at the gates should be included into Eq. (4).
using the estimate below Eq. (9) that lE  400 nm, we [14] T. A. Sedrakyan, E. G. Mishchenko, and M. E. Raikh,
conclude that the width of the flake should exceed d > Phys. Rev. B 74, 235423 (2006).
10 m. The magnetoplasmon modes (19) are ðlB =lE Þ2 [15] P. G. Silvestrov and K. B. Efetov, Phys. Rev. B 77, 155436
(2008).
slower than electrons. Note that these modes are undamped
[16] In addition, even and odd solutions with n > 0 phave ffiffiffiffiffiffi
since single-particle excitations cannot be induced at fre- different singular pbehavior at jj  1: ðevenÞ  jj,
quencies below cyclotron frequency !B . ffiffiffiffiffiffi
ðoddÞ  signðÞ= jj. At  ! 1, all solutions diverge
Conclusions.—Graphene p-n junctions are among the pffiffiffiffiffiffiffiffiffiffiffiffiffiffi
as   1= 1  2 .
most simple and promising applications of this material. [17] L. M. Zhang and M. M. Fogler, Phys. Rev. Lett. 100,
Single-electron properties of p-n junctions have been ex- 116804 (2008).
tensively studied. In the present Letter, we investigated [18] I. L. Aleiner and L. I. Glazman, Phys. Rev. Lett. 72, 2935
their collective excitations both with and without magnetic (1994).
field. We anticipate that plasmon modes will be crucial for [19] V. A. Volkov and S. A. Mikhailov, JETP Lett. 42, 556
the optical response of graphene nanostructures and real- (1985).

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