EXP 1-Charecteristics of SCR, MOSFET & IGBT-final

G.
Narayanamma Institute of Technology & Science

(for Women)
Shaikpet, Hyderabad-500 008
DEPARTMENT OF ELECTRICAL & ELECTRONICS ENGG
Power Electronics Lab III-B.Tech,II-Sem,EEE
Exp.No: 1
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G.Narayanamma Institute of Technology & Science
(for Women)
Exp.No: 1
Theory:
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SCR:
A thyristor is a four layer 3 junction p-n-p-n semiconductor device consisting of three p-n
junctions, functioning as an electrical switch for high power operations. It has three basic
terminals, namely the anode, cathode and the gate mounted on the semiconductor layers of the
device. The symbolic diagram and the basic circuit diagram for determining the characteristics
of thyristor is shown in the figure below,
From the circuit diagram above we can see the anode and cathode are connected to the supply
voltage through the load. Another secondary supply Es is applied between the gate and the
cathode terminal which supplies for the positive gate current when the switch S is closed.
On giving the supply we get the required V-I characteristics of a thyristor show in the figure
below for anode to cathode voltage Vak and anode current Ia as we can see from the circuit
diagram. A detailed study of the characteristics reveals that the thyristor has three basic modes of
operation, namely the reverse blocking mode, forward blocking (off-state) mode and forward
conduction (on-state) mode.
Reverse Blocking Mode of Thyristor
Initially for the reverse blocking mode of the thyristor, the cathode is made positive with
respect to anode by supplying voltage E and the gate to cathode supply voltage E s is detached
initially by keeping switch S open. For understanding this mode we should look into the fourth
quadrant where the thyristor is reverse biased.
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Here Junctions J1 and J3 are reverse biased whereas the junction J 2 is forward biased. The
behavior of the thyristor here is similar to that of two diodes are connected in series with reverse
voltage applied across them. As a result only a small leakage current of the order of a few
μAmps flows.This is the reverse blocking mode or the off-state, of the thyristor. If the reverse
voltage is now increased, then at a particular voltage, known as the critical breakdown voltage
VBR, an avalanche occurs at J1 and J3 and the reverse current increases rapidly. A large current
associated with VBR gives rise to more losses in the SCR, which results in heating. This may lead
to thyristor damage as the junction temperature may exceed its permissible temperature rise. It
should, therefore, be ensured that maximum working reverse voltage across a thyristor does not
exceed VBR. When reverse voltage applied across a thyristor is less than VBR, the device offers
very high impedance in the reverse direction. The SCR in the reverse blocking mode may be
treated as open circuit.
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Forward Blocking Mode
When the anode is positive with respect to the cathode, with gate kept in open condition. The
thyristor is now said to be forward biased as shown the figure below.
As we can see the junctions J 1 and J3arenow forward biased but junction J2 goes into reverse
biased condition. In this particular mode, a small current, called forward leakage current is
allowed to flow initially as shown in the diagram for characteristics of thyristor. Now, if we keep
on increasing the forward biased anode to cathode voltage.
In this particular mode, the thyristor conducts currents from anode to cathode with a very small
voltage drop across it. A thyristor is brought from forward blocking mode to forward conduction
mode by turning it on by exceeding the forward break over voltage or by applying a gate pulse
between gate and cathode. In this mode, thyristor is in on-state and behaves like a closed switch.
Voltage drop across thyristor in the on state is of the order of 1 to 2 V depending beyond a
certain point, then the reverse biased junction J2 will have an avalanche breakdown at a voltage
called forward break over voltage VB0 of the thyristor. But, if we keep the forward voltage less
than VBO, we can see from the characteristics of thyristor, that the device offers a high
impedance. Thus even here the thyristor operates as an open switch during the forward blocking
mode.
Forward Conduction Mode
When the anode made positive with respect to cathode, the SCR in forward biased condition.
When the gate signal is applied to the between gate and cathode, the reverse junction J 2 will have
an avalanche breakdown prior to forward break over voltage V BO leading to thyristor turn on.
Once the thyristor is turned on we can see from the diagram for characteristics of thyristor, that
the point M at once shifts toward N and then anywhere between N and K. Here NK represents
the forward conduction mode of the thyristor. In this mode of operation, the thyristor conducts
maximum current with minimum voltage drop, this is known as the forward conduction forward
conduction or the turn on mode of the thyristor.
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Metal Oxide Field Effect Transistor(MOSFET):

MOSFETs are tri-terminal, unipolar, voltage-controlled, high input impedance devices which
form an integral part of vast variety of electronic circuits. These devices can be classified into
two types viz., depletion-type and enhancement-type, depending on whether they possess a
channel in their default state or no, respectively. Further, each of them can be either p-channel or
n-channel devices as they can have their conduction current due to holes or electrons
respectively. However inspite of their structural difference, all of them are seen to work on a
common basic principle which is explained in detail in the article “MOSFET and its Working“.
This further implies that all of them exhibit almost similar characteristic curves, but for differing
voltage values.
In general, any MOSFET is seen to exhibit three operating regions viz.,
1. Cut-Off Region
Cut-off region is a region in which the MOSFET will be OFF as there will be
no current flow through it. In this region, MOSFET behaves like an open switch and is
thus used when they are required to function as electronic switches.
2. Ohmic or Linear Region
Ohmic or linear region is a region where in the current I DS increases with an increase in
the value of VDS. When MOSFETs are made to operate in this region, they can be used as
amplifiers.
3. Saturation Region
In saturation region, the MOSFETs have their I DS constant inspite of an increase in
VDS and occurs once VDS exceeds the value of pinch-off voltage VP. Under this condition,
the device will act like a closed switch through which a saturated value of I DS flows. As a
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result, this operating region is chosen whenever MOSFETs are required to perform
switching operations.
Having known this, let us now analyze the biasing conditions at which these regions are
experienced for each kind of MOSFET.
n-channel Enhancement-type MOSFET

Figure 1a shows the transfer characteristics (drain-to-source current I DS versus gate-to-source
voltage VGS) of n-channel Enhancement-type MOSFETs. From this, it is evident that the
current through the device will be zero until the V GS exceeds the value of threshold voltage V T.
This is because under this state, the device will be void of channel which will be connecting the
drain and the source terminals. Under this condition, even an increase in V DS will result in no
current flow as indicated by the corresponding output characteristics (I DS versus VDS) shown by
Figure 1b. As a result this state represents nothing but the cut-off region of MOSFET’s
operation.
Next, once VGS crosses VT, the current through the device increases with an increase in I DS
initially (Ohmic region) and then saturates to a value as determined by the V GS (saturation region
of operation) i.e. as VGS increases, even the saturation current flowing through the device also
increases. This is evident by Figure 1b where IDSS2 is greater than IDSS1 as VGS2 > VGS1, IDSS3 is
greater than IDSS2 as VGS3 > VGS2, so on and so forth. Further, Figure 1b also shows the locus of
pinch-off voltage (black discontinuous curve), from which VP is seen to increase with an increase
in VGS.
Insulated Gate Bipolar Transistor( IGBT):

It is a relatively new device in power electronics and before the advent of IGBT, Power
MOSFETs and Power BJT were common in use in power electronic applications. Both of these
devices possessed some advantages and simultaneously some disadvantages. On one hand, we
had bad switching performance, low input impedance, secondary breakdown and current
controlled Power BJT and on the other we had excellent conduction characteristics of it.
Similarly, we had excellent switching characteristics, high input impedance, voltage controlled
PMOSFETs, which also had bad conduction characteristics and problematic parasitic diode at
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higher ratings. Though the unipolar nature of PMOSFETs leads to low switching times, it also
leads to high ON-state resistance as the voltage rating increases.
Thus the need was for such a device which had the goodness of both PMOSFETs and Power BJT
and this was when IGBT was introduced in around the early 1980s and became very popular
among power electronic engineers because of its superior characteristics. IGBT has PMOSFET
like input characteristics and Power BJT like output characteristics and hence its symbol is also
an amalgamation of the symbols of the two parent devices. The three terminals of IGBT are
Gate, Collector and Emitter. The figure below shows the symbol of IGBT.
IGBT is known by various other names also, such as- Metal Oxide Insulated Gate Transistor
(MOSIGT), Gain Modulated Field Effect Transistor (GEMFET), Conductively Modulated Field
Effect Transistor (COMFET), Insulated Gate Transistor (IGT).
Structure of IGBT
The structure of IGBT is very much similar to that of PMOSFET, except one layer known as
injection layer which is p+ unlike n+ substrate in PMOSFET. This injection layer is the key to the
superior characteristics of IGBT. Other layers are called the drift and the body region. The two
junctions are labeled J1 and J2. Figure below show the structure of n-channel IGBT.
Upon careful observation of the structure, we’ll find that there exists an n-channel MOSFET and
two BJTs- Q1 and Q2 as shown in the figure. Q1 is p+n–p BJT and Q2 is n–pn + BJT. Rd is the
resistance offered by the drift region and Rb is the resistance offered by p body region. We can
observe that the collector of Q1 is same as base of Q 2 and collector of Q2 is same as base of Q1.
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Hence we can arrive at an equivalent circuit model of IGBT as shown in the figure below.
The two transistor back to back connection forms a parasitic thyristor as shown in the above
figure.
N-channel IGBT turns ON when the collector is at a positive potential with respect to emitter and
gate also at sufficient positive potential (>V GET) with respect to emitted. This condition leads to
the formation of an inversion layer just below the gate, leading to a channel formation and a
current begins to flow from collector to emitter.
The collector current Ic in IGBT constitutes of two components- Ie and Ih. Ie is the current due to
injected electrons flowing from collector to emitter through injection layer, drift layer and finally
the channel formed. Ih is the hole current flowing from collector to emitter through Q1 and body
resistance Rb. Hence
Although Ih is almost negligible and hence Ic ≈ Ie.

A peculiar phenomenon is observed in IGBT known as Latching up of IGBT. This occurs when
collector current exceeds a certain threshold value (ICE). In this the parasitic thyristor gets latched
up and the gate terminal loses control over collector current and IGBT fails to turn off even when
gate potential is reduced below VGET. For turning OFF of IGBT now, we need typical
commutation circuitry as in the case of forced commutation of thyristors. If the device is not
turned off as soon as possible, it may get damaged.
Characteristics of IGBT
Static I-V Characteristics of IGBT
The figure below shows static i-v characteristics of an n-channel IGBT along with a circuit
diagram with the parameters marked.
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The graph is similar to that of a BJT except that the parameter which is kept constant for a plot is
VGE because IGBT is a voltage controlled device unlike BJT which is a current controlled device.
When the device is in OFF mode (V CE is positive and VGE < VGET) the reverse voltage is blocked
by J2 and when it is reverse biased, i.e. VCE is negative, J1 blocks the voltage.
Transfer Characteristics of IGBT; Figure below shows the transfer characteristic of IGBT,
which is exactly same as PMOSFET. The IGBT is in ON-state only after V GE is greater than a
threshold value VGET.
The figure below shows the typical switching characteristic of IGBT.
Turn on time ton is composed of two components as usual, delay time (t dn) and rise time (tr).
Delay time is defined as the time in which collector current rises from leakage current I CE to 0.1
IC (final collector current) and collector emitter voltage falls from V CE to 0.9VCE. Rise time is
defined as the time in which collector current rises from 0.1 I C to IC and collector emitter voltage
falls from 0.9VCE to 0.1 VCE.
The turn off time toff consists of three components, delay time (t df), initial fall time (tf1) and final
fall time (tf2). Delay time is defined as time when collector current falls from IC to 0.9 IC and VCE
begins to rise. Initial fall time is the time during which collector current falls from 0.9 I C to 0.2 IC
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and collector emitter voltage rises to 0.1 V CE. The final fall time is defined as time during which
collector current falls from 0.2 IC to 0.1 IC and 0.1VCE rises to final value VCE.
Advantages and Disadvantages of IGBT

Advantages:-
Advantages of IGBT are showing below
 Lower gate drive requirements
 Low switching losses
 Small snubber circuitry requirements
 High input impedance
 Voltage controlled device
 Temperature coefficient of ON state resistance is positive and less than PMOSFET,
hence less On-state voltage drop and power loss.
 Enhanced conduction due to bipolar nature
 Better Safe Operating Area
Disadvantages:-
Disadvantages of IGBT are showing below
 Cost
 Latching-up problem
 High turn off time compared to PMOSFET
Procedure for SCR:

Forward Blocking mode:
1.Make the connections as per circuit diagram
2.Keep the gate terminal open and apply the forward voltage between anode & cathode.
3.By varying input voltage, note down the voltage across the SCR and Anode current
4.Tabulate the anode-cathode voltages and anode currents.
5.Draw the V-I characteristics of a SCR (take the voltage on X-axis & Current on Y- axis)
Reverse blocking mode:
2.Keep the gate terminal open and apply the reverse voltage between anode & cathode.
3.By varying input voltage, note down the voltage across the SCR and Anode current
5.Draw the V-I characteristics of a SCR (take the voltage on X-axis & Current on Y- axis)
Forward Conduction mode:
2.Apply the forward voltage between anode & cathode and also apply the gate voltage between
gate & cathode.
3.By varying rheostat, note down the voltage across the SCR and Anode current
5.Draw the V-I characteristics of a SCR on a same graph with different scale of anode current on
Y-axis (take the voltage on X-axis & Current on Y- axis).
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Tabular columns(SCR):
S.No Forward blocking Reverse blocking Forward Conduction Mode
mode mode
VAK(V) IA(A) VAK(V) IA(A) VAK(V) IA(A)

1
2
3
4
5
6
Tabular columns(MOSFET):
S.No Transfer Output Characteristics
Characteristics VGS=
VDS=
VGS(V) ID(A) VDS(V) ID(A)
1
2
3
4
5
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Tabular columns(MOSFET):
S.No Transfer Output Characteristics
Characteristics VGE=
VCE=
VGE(V) IC(A) VCE(V) IC(A)
1
2
3
4
5
6
Result: 1. The static V-I characteristics of a SCR were drawn.

2. The transfer characteristics & Drain characteristics are obtained and their respective graphs
were plotted.
3. The transfer characteristics & collector characteristics are obtained and their respective graphs
were plotted.
Faculty Incharge HOD-EEE

(G.Ramana Reddy) (DR.N.Malla Reddy)
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EXP 1-Charecteristics of SCR, MOSFET & IGBT-final

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EXP 1-Charecteristics of SCR, MOSFET & IGBT-final

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G.

Narayanamma Institute of Technology & Science

Metal Oxide Field Effect Transistor(MOSFET):

n-channel Enhancement-type MOSFET

Insulated Gate Bipolar Transistor( IGBT):

Although Ih is almost negligible and hence Ic ≈ Ie.

The figure below shows the typical switching characteristic of IGBT.

Advantages and Disadvantages of IGBT

Procedure for SCR:

VAK(V) IA(A) VAK(V) IA(A) VAK(V) IA(A)

Result: 1. The static V-I characteristics of a SCR were drawn.

Faculty Incharge HOD-EEE

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