Thermoelectric properties of single-phase

full-Heusler alloy Fe2TiSi films with D03-type

disordering
Cite as: J. Appl. Phys. 127, 055106 (2020); https://doi.org/10.1063/1.5141949
Submitted: 09 December 2019 . Accepted: 18 January 2020 . Published Online: 04 February 2020

Y. Shimanuki, K. Kudo, T. Ishibe, A. Masago, S. Yamada, Y. Nakamura , and K. Hamaya

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Thermoelectric properties of single-phase

full-Heusler alloy Fe2TiSi films with D03-type
disordering
Cite as: J. Appl. Phys. 127, 055106 (2020); doi: 10.1063/1.5141949
Submitted: 9 December 2019 · Accepted: 18 January 2020 · View Online Export Citation CrossMark
Published Online: 4 February 2020

Y. Shimanuki,1 K. Kudo,1 T. Ishibe,1 A. Masago,2 S. Yamada,1,2 Y. Nakamura,1 and K. Hamaya1,2,a)

AFFILIATIONS
1
Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
2
Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531,
Japan

a)
Author to whom correspondence should be addressed: hamaya@ee.es.osaka-u.ac.jp

ABSTRACT
Fe2 TiSi has been expected to be one of the high-performance thermoelectric full-Heusler alloys. Here, we experimentally clarify the
room-temperature Seebeck coefficient (S) and thermal conductivity (κ) for the Fe2 TiSi films. Using a molecular beam epitaxy technique, we
demonstrate the high degree of L21 -ordering and the homogeneous single-phase structure in the Fe2 TiSi films. We find that the intrinsic
conduction carriers of the Fe2 TiSi films are holes and impurity-induced carrier scattering is indicated, derived from weak magnetic
moments due to the presence of D03 -type (Fe , Ti) structural disorder in the Fe2 TiSi film. From reliable measurements for thin films,
the values of S and κ are estimated to be 101 μV/K and 5.6 W/(m K), respectively, at room temperature. This study will open a new way for
full-Heusler alloy thermoelectric materials other than those in Fe2 VAl systems.

Published under license by AIP Publishing. https://doi.org/10.1063/1.5141949

I. INTRODUCTION Fe2 VAl (S
25–40 μV/K).10–13 Because Fe2 TiSi is composed of

For one of the energy harvesting technologies, thermoelectric
materials that can efficiently convert the wasted heat to electrical
energy below 500 K have been explored,1,2 in which the performance
of the thermoelectric modules depends greatly on the intrinsic
and extrinsic material properties.3–6 In general, the conversion effi-
ciently is directly expressed by the dimensionless figure-of-merit,
ZT (Z = S2 /ρκ), where S, ρ, κ, and T are the Seebeck coefficient,
electrical resistivity, thermal conductivity, and absolute temperature,
respectively. In the field of thermoelectric materials and physics, the
above values of S, ρ, and κ should be clarified for understanding
material properties. From the above viewpoint, Bi2 Te3 is one of the
well-known thermoelectric materials exhibiting high performance at
around room temperature.7,8
Recently, it was theoretically predicted that a semiconducting
full-Heusler alloy, Fe2 TiSi, exhibits high S values from 160 to
350 μV/K at 300 K under electron carrier concentrations ranging
from 1:0  1020 cm3 to 1:0  1021 cm3 .9 Note that the S values
of approximately 300 μV/K are one order of magnitude larger
than those of the well-known thermoelectric full-Heusler alloy,
abundant and nontoxic elements, various thermoelectric applica-
tions for IoT sensors can be expected. Although the synthesis for
bulk Fe2 TiSi was challenged about 40 years ago,14,15 the phase
separation including some other phases such as hexagonal Fe2 Ti
easily occurred. That is, it has been difficult to obtain a single-
phase Fe2 TiSi bulk. For thin-film Fe2 TiSi, Meinert et al. demon-
strated epitaxial growth of Fe2 TiSi films grown by dc/rf magnetron
sputtering at 780  C and showed a semiconducting bandgap of
0.4 eV and electrical properties such as ρ in 2014.16 However,
direct evidence for the demonstration of the single-phase micro-
structure in the film and thermoelectric properties, S and κ, of the
grown Fe2 TiSi films were not shown yet.16
In this article, we experimentally clarify the room-temperature
S and κ values for the Fe2 TiSi films. Using a molecular beam
epitaxy (MBE) technique, we demonstrate the high degree of
L21 -ordering and the homogeneous single-phase structure in the
Fe2 TiSi films. It should be noted that the intrinsic conduction car-
riers of the grown Fe2 TiSi films are holes and impurity-induced
carrier scattering is indicated, derived from weak magnetic

J. Appl. Phys. 127, 055106 (2020); doi: 10.1063/1.5141949 127, 055106-1

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 Journal of
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moments due to the presence of the D03 -type (Fe , Ti) structural
disorder in the Fe2 TiSi film. From reliable measurements for thin
films, the values of S and κ are estimated to be 101 μV/K and
5.6 W/(m K), respectively, at room temperature. This study will
open a new way for full-Heusler alloy thermoelectric materials
other than those in Fe2 VAl systems.
II. FILM GROWTH
Fe2 TiSi films were grown on MgAl2 O4 (001) substrates by using
an MBE technique with nonstoichiometric deposition.13,17–22
Figure 1(a) illustrates the crystal structure for L21 -ordered Fe2 TiSi
and spinel-type MgAl2 O4 . Because the mismatch between the lattice
16
constant of Fe2p TiSi
ffiffiffi (
0:5717 nm) and half of the diagonal length
of MgAl2 O4 (1/ 2  0:8083 nm = 0.5715 nm) is less than 0.1% and
there is good atomic arrangement matching, an epitaxial relationship
of Fe2 TiSi[100](001)/MgAl2 O4 [110](001) can be expected. After
loading the MgAl2 O4 (001) substrates into the MBE chamber, we
performed the heat treatment at 600  C for 1 h with a base pressure
of
107 Pa. From in situ reflection high-energy electron diffraction
(RHEED) observations (not shown here), good surface flatness of
the MgAl2 O4 (001) substrate was confirmed. Cooling the substrate
temperature down to 350  C, we grew Fe2 TiSi layers with a thickness
of 50–150 nm by coevaporating Fe, Ti, and Si using Knudsen cells.
During the growth, we intentionally controlled the supply elements,
where the ratio of Fe, Ti, and Si was set to 1.7:1.3:1 for obtaining
stoichiometric Fe2 TiSi films. The in situ RHEED image of the
Fe2 TiSi surface exhibited symmetrical streaks (not shown here),
indicating two-dimensional epitaxial growth of the Fe2 TiSi films.
FIG. 1. (a) Crystal structures for L21 -ordered Fe2 TiSi and MgAl2 O4 . (b) θ–2θ
XRD pattern of Fe2 TiSi/MgAl2 O4 (001). (c) f-scan measurement of the (111)
plane for a grown Fe2 TiSi film.
J. Appl. Phys. 127, 055106 (2020); doi: 10.1063/1.5141949
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III. RESULTS
A. Structural characterizations
Figure 1(b) shows the θ–2θ x-ray diffraction (XRD) pattern
for the grown Fe2 TiSi film. The (002) and (004) diffraction peaks
of Fe2 TiSi are clearly observed at 2θ values of
31 and
65 ,
respectively, indicating the formation of (001)-oriented epitaxial
Fe2 TiSi films. The lattice constant estimated from the XRD pattern
was
0:576 nm, slightly larger than the theoretical value.9 From
the f-scan measurements of the (202) plane for the Fe2 TiSi films
(not shown here), we confirmed the in-plane crystal orientation of
Fe2 TiSi[100](001)//MgAl2 O4 [110](001). The f-scan measurement
of the (111) plane is presented in Fig. 1(c). Sharp diffraction peaks
with fourfold symmetry are seen, which indicates the formation of
L21 -ordered structures in the Fe2 TiSi films. We roughly estimate
the degree of B2 and L21 ordering, SB2 and SL21 , for the Fe2 TiSi
films from the following equations:23,24
sffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi sffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi
I002 =I004 2 I111 =I202
SB2 ¼ R =I R , SL21 ¼ R =I R , (1)
I002 004 3  SB2 I111 202
where Ihkl and Ihkl R
are the experimental and theoretical peak
intensities for the hkl plane. As a result, the values of SB2 and SL21
are 0:96 + 0:02 and 1:05 + 0:16, respectively, indicating that
SB2
1:0 and SL21
1:0. These results mean that highly
L21 -ordered Fe2 TiSi films are obtained at a growth temperature of
350  C. However, the increased SL21 value more than 1.0 and the
decreased SB2 value less than 1.0 generally indicate the presence of
D03 -type disordering in full-Heusler alloys.25 In the case of Fe2 TiSi,
we can regard the Fe , Ti disordering as D03 -type disordering.
We further carried out structural characterizations of the
epitaxial Fe2 TiSi films by high-angle annular dark-field scanning
transmission electron microscopy (HAADF-STEM) and energy
dispersive x-ray spectroscopy (EDX). Figure 2 shows a typical
HAADF-STEM image with EDX line profiles (a) and EDX
mapping images of each element (b) for the epitaxial Fe2 TiSi film.
FIG. 2. (a) HAADF-STEM image with EDX line profiles of the
Fe2 TiSi(50 nm)/MgAl2 O4 (001). (b) EDX elemental maps for the same Fe2 TiSi
(50 nm)/MgAl2 O4 (001).
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The contrast of the HAADF-STEM image is nearly uniform, indi-

cating a compositionally homogeneous Fe2 TiSi film over the mea-
sured area. The EDX line profiles of the Fe2 TiSi/MgAl2 O4 (001) are
also presented in the inset of Fig. 2(a). Even though we coevapo-
rated Fe, Ti, and Si at a ratio of 1.7:1.3:1 to grow the epitaxial
Fe2 TiSi film, the chemical composition in the Fe2 TiSi layer along
the vertical direction is perfectly stoichiometric (Fe:Ti:Si ¼ 2:1:1).
As shown in Fig. 2(b), the atomic composition fluctuation in the
constituent element cannot be seen, meaning the absence of the
phase separation in the epitaxial Fe2 TiSi films. From these
structural characterizations, we conclude that the stoichiometric,
homogeneous, and single-phase Fe2 TiSi films are achieved by our
MBE technique with nonstoichiometric deposition.

B. Electrical and magnetic properties

Before examining thermoelectrical properties, we also evaluated
electrical and magnetic properties in order to understand the quality
of the MBE-grown Fe2 TiSi films. To measure electrical properties of
the stoichiometric, homogeneous, and single-phase Fe2 TiSi films, we
patterned the Fe2 TiSi films into Hall-bar devices with 80  80 μm2
in size, as shown in the left inset of Fig. 3(a), by conventional photo-
lithography and Arþ ion-milling techniques. The main panel of
Fig. 3(a) shows the Hall voltage (VH ) vs applied magnetic fields (Hz )
perpendicular to the film plane at 300 K. An almost linear change in
VH with changing Hz can be observed, meaning almost no anoma-
lous Hall component at 300 K. We note that the positive value of VH
with increasing Hz indicates that the conduction carriers are intrinsi-
cally holes in the MBE-grown Fe2 TiSi films. From the slope of the
VH –Hz curve in the high magnetic field region (jHz j . 5 T), the
hole concentration (nh ) can be estimated to be 1:8  1020 cm3 ,
which is lower than that reported previously.16 The right inset of
Fig. 3(a) indicates field-dependent magnetization (M–H) curves
at 300 K for the stoichiometric, homogeneous, and single-phase
Fe2 TiSi film (red), together with that for an intentionally formed
off-stoichiometric Fe2 TiSi film (blue). Here, external magnetic fields
(Hy ) were applied to the film plane. For the stoichiometric Fe2 TiSi
film, there is almost no magnetization at 300 K, being consistent
with the absence of the anomalous Hall component in the main
panel. On the other hand, for the intentionally formed off- FIG. 3. (a) Hall voltage at 300 K as a function of Hz . Left and right insets show
stoichiometric Fe2 TiSi film, obvious magnetic behavior can be seen. a micrograph of the fabricated Hall-bar device and an M–H curve for a stoichio-
Thus, the stoichiometric, homogeneous, and single-phase features in metric Fe2 TiSi film (red symbols) measured at 300 K, together with that for an
the Fe2 TiSi film seem to contribute its room-temperature magnetic off-stoichiometric Fe2 TiSi film (blue symbols), respectively. (b) Temperature
dependence of ρ for the 50-nm-thick Fe2 TiSi film, together with those for a
properties, similar to Fe2 VAl films.13,21,22
150-nm-thick Fe2 VAl film (black triangles).13 The red open and closed circles
Figure 3(b) shows the temperature dependence of ρ for the are the data with and without applying Hz . The inset shows μh –T curve for the
50-nm-thick epitaxial Fe2 TiSi film with and without applying a Hz stoichiometric Fe2 TiSi film.
of 8 T. As a reference, we also plotted the data without applying Hz
for a 150-nm-thick epitaxial Fe2 VAl film.13 The value of ρ increases
with decreasing external temperature (T) for the Fe2 TiSi film. Here,
the value of nh , estimated from the Hall-effect measurements, was suppressed. This behavior can be generally explained by the sup-
almost constant (
2:0  1020 cm3 ) with decreasing temperature pression of the spin-related carrier scattering. A similar discussion
(not shown here). Thus, the carrier mobility μh decreases with about the ρ–T behavior at low temperatures was reported in a pre-
decreasing temperature, as shown in the inset of Fig. 3(b). Unlike vious work on sputtered Fe2 TiSi films grown at 780  C in Ref. 16.
the reference Fe2 VAl film,13 the ρ–T curve without applying Hz for From the ρ–T features, we should also consider the presence of
the Fe2 TiSi film varies greatly, being much larger than that for the magnetic moments even in the stoichiometric, homogeneous, and
Fe2 VAl film. As a consequence of applying a Hz of 8 T, the values single-phase Fe2 TiSi films, although it is a nonmagnetic material at
of ρ in a whole range of measurement temperature are markedly room temperature.

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 Journal of
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Taking into account the above electrical properties, we mea-
sured again magnetic properties down to low temperatures. The
inset of Fig. 4(a) shows an M–H curve of the Fe2 TiSi film at 10 K.
A finite magnetic moment of 0.14 μB /f.u. can clearly be detected.
To discuss the origin of the magnetic moment in the Fe2 TiSi film,
we assume the presence of disordering in the Fe2 TiSi Heusler-alloy
structure. As discussed in Subsection III A, we should generally
consider the presence of D03 -type disordering, i.e., Fe , Ti disor-
dering, in the Fe2 TiSi film. Using first-principles density-functional
theory (DFT) calculations with the Akai-KKR package,26 we
theoretically investigated the correlation between the presence of
the Fe , Ti disordering and magnetic moment for Fe2 TiSi. The
package is based on the Korringa–Kohn–Rostoker (KKR) method27
with a coherent potential approximation (CPA), and the following
conditions were assumed; the Moruzzi–Janak–Williams potential
FIG. 4. (a) Total spin moment as a function of the concentration of Fe , Ti
disordering [Ti concentration at the Fe (A,C) sites]. The inset shows an M–H
curve for a stoichiometric, homogeneous, and single-phase Fe2 TiSi film at 10 K.
(b) Spin-resolved density of states (DOS) of Fe2 TiSi with the presence of 6%
Fe , Ti disordering (left) and with the absence of the disordering (right).
J. Appl. Phys. 127, 055106 (2020); doi: 10.1063/1.5141949
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and the variational pseudo-self-interaction-corrected density-
functional approach28 were used for the exchange–correlation
calculations. The k-sampling points were 195. The lattice constant
was fixed to the experimental value of 0.576 nm. Figure 4(a) shows
the calculated magnetic moment (μB /f.u.) of Fe2 TiSi as a function
of the Fe , Ti disordering concentration [Ti concentration at the
Fe (A,C) sites shown in Fig. 1(a)]. With increasing the concentra-
tion of the Fe , Ti disordering, a weak magnetic moment appears
and it gradually increases. It should be noted that a magnetic
moment of 0.14 μB /f.u. nearly corresponds to the presence of 6% Fe
, Ti disordering. Thus, we infer that the finite magnetic moment
in the Fe2 TiSi film originates not from the presence of the off-
stoichiometry shown in the inset of Fig. 3(a) but from the presence
of the D03 -type Fe , Ti disordering.
Figure 4(b) displays spin-resolved density of states (DOS) of
Fe2 TiSi with the presence of 6% Fe , Ti disordering (left),
together with the absence of the disordering (right). Note that the
6% Fe , Ti disordering in Fe2 TiSi causes the formation of the
impurity states above the valence band (see red arrow). As a result,
the Fermi level is located across the formed impurity state derived
from the valence band, implying the hole conduction. This feature
is also consistent with the result of Fig. 3(a). From these consider-
ations, the stoichiometric, homogeneous, and single-phase Fe2 TiSi
films grown by MBE have a small amount of D03 -type Fe , Ti
disordering (
6%) and the hole conduction due to the disorder-
induced state from the valence band.
C. Thermoelectric properties
We evaluated thermoelectric properties of the stoichiometric,
homogeneous, and single-phase Fe2 TiSi films. The S value of the
Fe2 TiSi films was measured at room temperature by applying a
temperature difference between the film ends. Because the
MgAl2 O4 substrate was an insulator with an extremely large sheet
resistance (.107 Ω/sq), the measured S corresponds to that of the
Fe2 TiSi films, which have a relatively small sheet resistance of

102 Ω/sq. The cross-plane thermal conductivity (κ) values of the
films were measured using the 2ω method,29–31 where the thermor-
eflectance signal was fitted by a one-dimensional heat dissipation
model using the literature value.32 To measure the thermal resis-
tance, Au films were deposited on the film surfaces. Because the sheet
resistance of the Au films (0.1–0:7 Ω/sq) was three orders of magni-
tude smaller than that of the Fe2 TiSi films (.100 Ω/sq), the Joule
heating in the Fe2 TiSi films could be negligible. For the Fe2 TiSi film
in this study, the S value of 101 μV/K is obtained, relatively large
compared to that of the thin-film Fe2 VAl (S ¼ 40 μV/K) reported
previously.13 Although our Fe2 TiSi films have not yet reached the the-
oretically predicted values from 160 to 350 μV/K,9 a high S value
of 101 μV/K has never been reported in undoped full-Heusler alloys.
For obtaining a reliable value of κ, we also measured the film
thickness dependence of the total thermal resistance (Rtotal ), as
shown in Fig. 5. It should be noted that a linear relationship
appears clearly. Because Rtotal is a series of a film thermal resistance
(Rfilm ) and an interfacial thermal resistance (Rint ),30 the slope and
y-axis intercept of Rtotal correspond to Rfilm per unit thickness of
the Fe2 TiSi film and Rint (8  109 m2 K/W), respectively. From
the slope, the value of κ is reliably estimated to be 5.6 W/(m K),
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between the spin- and carrier-induced thermal fluctuation in the

Fe2 TiSi film. From these considerations, we infer that the marked
enhancement in the thermopower due to the spin fluctuation, as
shown in Ref. 33, cannot appear in the MBE-grown Fe2 TiSi in this
study.
We also comment on the validity of the value of S and κ in
the MBE-grown Fe2 TiSi films. First, compared to the undoped
Fe2 VAl film in Ref. 13, we obtained a relatively large S value, which is
an evident advantage of the Fe2 TiSi film. From first-principles calcu-
lations,9 however, extremely high S values from 160 to 350 μV/K
at 300 K were theoretically expected under electron carrier concentra-
tions ranging from 1:0  1020 cm3 to 1:0  1021 cm3 . Although
the synthesized Fe2 TiSi films showed hole conduction and there was
a small amount of D03 -type Fe , Ti disordering, the electronic band
structure of the conduction band edge for the Fe2 TiSi film was
almost the same as that without forming D03 -type Fe , Ti disorder-
ing, as expected in Fig. 4(b). In the MBE-grown Fe2 TiSi films, only
the formation of the impurity states above the valence band or below
FIG. 5. Total thermal resistance as a function of the film thickness. the conduction band should be considered to discuss electrical
and magnetic properties, as discussed in Sec. III. In addition to the
reduction in the D03 -type Fe , Ti disordering, if the sufficient
electron doping with P, As, and Sb was performed like a study of
smaller than that of the epitaxial Fe2 VAl films [7.5 W/(m K)].13 Fe2 VAl,10,11,22,34 markedly high S values more than 300 μV/K
Note that since there are no theoretical or experimental reports on might be expected.9 Simultaneously, it is possible to control the elec-
κ of Fe2 TiSi, we experimentally elucidate the value of κ for Fe2 TiSi trical resistivity by the electron doping.9 Next, since the value of κ in
in this study. In Table I, we summarize the thermoelectric and the Fe2 TiSi films was relatively small compared to the undoped
electrical properties of the stoichiometric, homogeneous, and Fe2 VAl film in Ref. 13, the component from the lattice (κph ¼ Cvl=3)
single-phase Fe2 TiSi film, together with those of the MBE-grown should also be small, where C, v, and l are lattice specific heat, group
Fe2 VAl and Fe2 VAl0:57 Si0:43 films in our previous works.13,22 velocity, and mean free pass of phonons,35–37 respectively. For the
Considering that Fe2 VAl is one of the well-known thermoelectric MBE-grown Si-doped Fe2 VAl films,22 we found an extremely small
materials, we can regard our Fe2 TiSi films developed using an MBE value of κph [2.3 W/(m K)] due to the formation of the disorder in
technique as a thermoelectric material. the Heusler structure. As also described in Sec. III, because we have
already discussed the presence of the Fe , Ti disordering in the
IV. DISCUSSION Fe2 TiSi films, the relatively small κ can be obtained.
Because the spin-related magnetoresistance effect was observed Although the potential performance of the full-Heusler alloy,
above room temperature in Fig. 3(b), the effect of the spin fluctua- Fe2 TiSi and Fe2 TiSn, has so far been theoretically predicted,9
tion on the thermopower at room temperature should be consid- thermoelectric properties such as S and κ of the stoichiometric,
ered.33,34 In general, for Fe2 VAl-based weak itinerant ferromagnets homogeneous, and single-phase materials have not been clarified
with a relatively high carrier concentration (
1022 cm3 ), the so far.16,38 On the other hand, this study reliably showed structural
enhancement in the value of the power factor, S2 /ρ, at around Curie characterizations and electrical and thermoelectrical measurements
temperature was reported.33 However, the MBE-grown Fe2 TiSi in for Fe2 TiSi for the first time. This study will open a new way for
this study was not a ferromagnet at around room temperature. Also, full-Heusler alloy thermoelectric materials other than those in
unlike the itinerant metallic carriers strongly coupled with the local Fe2 VAl systems.
spins,33 the hole carrier conduction with a low nh of
1020 cm3 via
impurity states above the valence band can restrict the coupling V. CONCLUSION
Fe2 TiSi has been expected to be one of the high-performance
TABLE I. Comparison of thermoelectric and electrical properties at 300 K between thermoelectric full-Heusler alloys.9 We experimentally clarified the
Fe2TiSi (this work) and our Fe2VAl films in Refs. 13 and 22. room-temperature S and κ values of 101 μV/K and 5.6 W/(m K),
respectively, for the Fe2 TiSi films with a high degree of L21 -ordering
Fe2TiSi film Fe2VAl film Fe2VAl0.57Si0.43 film and a homogeneous single-phase structure. We also found that the
(this work) (Ref. 13) (Ref. 22) intrinsic conduction carriers of the Fe2 TiSi films are holes and
ρ (μ Ω cm) 3.1 × 103 1.4 × 103 4.7 × 102 impurity-induced carrier scattering can be indicated, derived from
n (cm−3) 1.8 × 1020 (p) 8.4 × 1020 (p) 1.5 × 1022 (n) weak magnetic moments due to the presence of 6% D03 -type
S (μV/K) 101 40 −64 (Fe , Ti) structural disorder in the Fe2 TiSi film. This study will
κ (W/(m K)) 5.6 7.5 3.9 open a new way for full-Heusler alloy thermoelectric materials other
than those in Fe2 VAl systems.

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18
ACKNOWLEDGMENTS K. Tanikawa, S. Oki, S. Yamada, M. Kawano, M. Miyao, and K. Hamaya,
Thin Solid Films 557, 390 (2014).
This work was partly supported by JSPS KAKENHI (Grant Nos. 19
S. Yamada, K. Tanikawa, S. Oki, M. Kawano, M. Miyao, and K. Hamaya,
16H02333, 18KK0111, 18K13789, and 19H05616) and JST-CREST Appl. Phys. Lett. 105, 071601 (2014).
(No. JPMJCR18J1). 20
Y. Fujita, M. Yamada, M. Tsukahara, T. Oka, S. Yamada, T. Kanashima,
K. Sawano, and K. Hamaya, Phys. Rev. Appl. 8, 014007 (2017).
21
K. Kudo, S. Yamada, J. Chikada, Y. Shimanuki, Y. Nakamura, and K. Hamaya,
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J. Appl. Phys. 127, 055106 (2020); doi: 10.1063/1.5141949 127, 055106-6

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