DL137/D

Rev. 7, May-2000

Thyristor Device Data

TRIACs, SCRs, Surge Suppressors, and Triggers

ON Semiconductor
 Thyristor Device Data

TRIACs, SCRs, Surge Suppressors, and Triggers

DL137/D
Rev. 7, May–2000

 SCILLC, 2000
Previous Edition  1995
“All Rights Reserved’’
This edition of the Thyristor Data Manual has been revised extensively to reflect our current product portfolio
and to incorporate new products and corrections to existing data sheets. An expanded index is intended to help
the reader find information about a variety of subject material in the sections on Theory and Applications.

Although information in this book has been carefully checked, no responsibility for inaccuracies can be assumed
by ON Semiconductor. Please consult your nearest ON Semiconductor sales office for further assistance
regarding any aspect of ON Semiconductor Thyristor products.

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
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 ON SEMICONDUCTOR DEVICE CLASSIFICATIONS

In an effort to provide up–to–date information to the customer regarding the status of any given device,
ON Semiconductor has classified all devices into three categories: Preferred devices, Current products and Not
Recommended for New Design products.
A Preferred type is a device which is recommended as a first choice for future use. These devices are “preferred”
by virtue of their performance, price, functionality, or combination of attributes which offer the overall “best”
value to the customer. This category contains both advanced and mature devices which will remain available for
the foreseeable future.

“Preferred devices” are denoted below the device part numbers on the individual data sheets.

Device types identified as “current” may not be a first choice for new designs, but will continue to be available
because of the popularity and/or standardization or volume usage in current production designs. These products
can be acceptable for new designs but the preferred types are considered better alternatives for long term usage.

Any device that has not been identified as a “preferred device” is a “current” device.

This data book does not contain any “Not Recommended for New Design” devices.

ICePAK, POWERTAP, Thermopad, Thermowatt, and Unibloc are trademarks of Semiconductor Components Industries, LLC (SCILLC).

Cho-Therm is a registered trademark of Chromerics, Inc.

Grafoil is a registered trademark of Union Carbide
Rubber-Duc is a trademark of AAVID Engineering
Sil Pad and Thermal Clad are trademarks of the Bergquist Company.
Sync-Nut is a trademark of ITW Shakeproof
Thermasil is a registered trademark and Thermafilm is a trademark of Thermalloy, Inc.
Kapton and Teflon are registered trademarks of du Pont de Nemours & Co., Inc.

All brand names and product names appearing in this document are registered trademarks or trademarks of their
respective holders.

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ABOUT THIS REVISION 7 . . .

What can quickly identify engineers as Thyristor knowledgeable is them knowing the “K” lead designator on
the case outlines and packages identifies the cathode on SCRs. In this revision 7 of the Thyristor data book, a lot
has changed.

ON Semiconductor
ON Semiconductor is one of the world’s largest suppliers of analog, standard logic, and discrete
semiconductors for data and power management, with shipments of approximately 19 billion units and net
product revenue of over US $1.6 billion (pro forma) in 1999. ON Semiconductor’s products include integrated
circuits for high–bandwidth data applications, analog ICs for power management and low–voltage power
transistors. In addition to using micropackaging technology across all product families, ON Semiconductor
offers the largest selection of discrete semiconductors in a variety of surface mount and standard packages. These
semiconductors turn on and connect digital electronic products to our world. ON Semiconductor is the
tradename of SCG Holding Corporation. Altogether we have over 30 years experience in manufacturing
Thyristors.

Updated Data Book

Although some very successful older data sheets have been around in previous revisions of the Thyristor data
book, all have been revised if only to make minor corrections and format changes. Over two dozen new data
sheets have been added to the revision 7 data book that were not in the previous edition. In particular we are
proud of our series of high performance, new generation thyristors. We now have a larger selection of device
types with high noise immunity and also a larger number of sensitive gate triacs and SCR’s. In addition, there is
the new line of MMT surge protection series for telecom systems. Finally, a total of six new application notes
were added to this book. To find a complete list of the new material in the revision 7 data book please see the
page title “What’s Different in the Rev. 7 Data Book’’ near the front of this book.

Safety Regulatory Approval

For the first time in the Thyristor data book we included the UL safety regulatory registration file number on
the data sheets. UL approval registrations include the fullpack package for isolation, along with the UL approvals
for both SIDACs and our new line of Thyristor Surge Protective Devices (TSPD), the two MMT series that is
now included in the revision 7 Thyristor data book.

WEB Site
Naturally it is impossible to keep a data book completely current. We encourage customers to visit our
ON Semiconductor Thyristor web site at http://onsemi.com for the latest information and data sheet releases.

Thank you for your support,

Contributors and Editors

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4
 WHAT’S DIFFERENT IN THE REV. 7 DATA BOOK?

DATA SHEET ADDITIONS (From Rev. 6 Data Book)

2N6394 Series MAC16HCD, MAC16HCM, MAC16HCN

2N6400 Series MAC997 Series
MAC4DCM, MAC4DCN MCR8DCM, MCR8DCN
MAC4DHM MCR8DSM, MCR8DSN
MAC4DLM MCR12DCM, MCR12DCN
MAC4DSM, MAC4DSN MCR12DSM, MCR12DSN
MAC4M, MAC4N MCR12LD, MCR12LM, MCR12LN
MAC4SM, MAC4SN MCR68–2
MAC8SD, MAC8SM, MAC8SN MCR69–2, MCR69–3
MAC12HCD, MAC12HCM, MAC12HCN MCR716, MCR718
MAC12SM, MAC12SN MMT05B230T3, MMT05B260T3, MMT05B310T3
MAC15SD, MAC15SM, MAC15SN MMT10B230T3, MMT10B260T3, MMT10B310T3
MAC16CD, MAC16CM, MAC16CN

NEW PRODUCT LITERATURE ADDITIONS (From Rev. 6 Data Book)

AND8005 AND8008
AND8006 AND8015
AND8007 AND8017

DATA SHEET DELETIONS (From Rev. 6 Data Book)

2N6237–41 MCR102–103
BRX44–49 MCR310 Series
BRY55–30 Series MCR506 Series
MAC218, A Series S2800 Series
MAC228AFP, FP Series T2323
MAC229, A Series MBS4991 Series
MAC310, A Series MMT10V275 Series
MAC321 Series

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 THYRISTOR PART NUMBER PREFIX*

DEVICE PREFIX DEVICE DESCRIPTION

2N5060 Series Silicon Controlled Rectifiers (SCR)

2N6027, 2N6028 Programmable Unijunction Transistor (PUT)

2N6071A Series Triacs

2N6344, 49
2N6344A, 48A, 49A

2N6394 Series Silicon Controlled Rectifiers (SCR)

2N6400 Series
2N6504 Series

C106X & C122X Silicon Controlled Rectifiers (SCR)

MACXXXX Triacs

MCRXXXX Silicon Controlled Rectifiers (SCR)

MKPXXXX Sidacs: High Voltage Bidirectional Triggers

MMTXXXX Thyristor Surge Protective Devices (TSPD)

TXXXX Triacs

*2N Devices JEDEC Registered Series

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Table of Contents
Chapter 1: Theory and Applications
(Sections 1 thru 9)
Page
Section 1: Symbols and Terminology . . . . . . . . . . . . . 11
Section 2: Theory of Thyristor Operation . . . . . . . . . 17
Basic Behavior . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Switching Characteristics . . . . . . . . . . . . . . . . . . . . . . 20
False Triggering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Theory of SCR Power Control . . . . . . . . . . . . . . . . . . 23
Triac Theory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Methods of Control . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Zero Point Switching Techniques . . . . . . . . . . . . . . . . 32
Section 3: Thyristor Drivers and Triggering . . . . . . . 36
Pulse Triggering of SCRs . . . . . . . . . . . . . . . . . . . . . . 36
Effect of Temperature, Voltage and Loads . . . . . . . . 40
Using Negative Bias and Shunting . . . . . . . . . . . . . . 42
Snubbing Thyristors . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Using Sensitive Gate SCRs . . . . . . . . . . . . . . . . . . . . 47
Drivers: Programmable Unijunction
Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Section 4: The SIDAC, A New High Voltage
Bilateral Trigger . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Section 5: SCR Characteristics . . . . . . . . . . . . . . . . . . 67
SCR Turn–Off Characteristics . . . . . . . . . . . . . . . . . . 67
SCR Turn–Off Mechanism . . . . . . . . . . . . . . . . . . . . . 67
SCR Turn–Off Time tq . . . . . . . . . . . . . . . . . . . . . . . . . 67
Parameters Affecting tq . . . . . . . . . . . . . . . . . . . . . . . . 72
Characterizing SCRs for Crowbar Applications . . . . 78
Switches as Line–Type Modulators . . . . . . . . . . . . . . 86
Parallel Connected SCRs . . . . . . . . . . . . . . . . . . . . . . 92
RFI Suppression in Thyristor Circuits . . . . . . . . . . . . 96
Section 6: Applications . . . . . . . . . . . . . . . . . . . . . . . . 100
Phase Control with Thyristors . . . . . . . . . . . . . . . . . 100
Motor Control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
Phase Control with Trigger Devices . . . . . . . . . . . . 109
Cycle Control with Optically Isolated
Triac Drivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
AC Power Control with Solid–State Relays . . . . . . 117
Triacs and Inductive Loads . . . . . . . . . . . . . . . . . . . . 121
Inverse Parallel SCRs for Power Control . . . . . . . . 124
Interfacing Digital Circuits to Thyristor
Controlled AC Loads . . . . . . . . . . . . . . . . . . . . . . . . 125
DC Motor Control with Thyristors . . . . . . . . . . . . . . . 134
Programmable Unijunction Transistor (PUT)
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
Triac Zero–Point Switch Applications . . . . . . . . . . . 143
AN1045 — Series Triacs in AC High Voltage
Switching Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148
AN1048 — RC Snubber Networks for Thyristor
Power Control and Transient Suppression . . . . . . . 159
AND8005 — Automatic AC Line Voltage
Selector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 181
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Page
Section 6: Applications (continued)
AND8006 — Electronic Starter for Flourescent
Lamps . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184
AND8007 — Momentary Solid State Switch
for Split Phase Motors . . . . . . . . . . . . . . . . . . . . . . . . 188
AND8008 — Solid State Control Solutions
for Three Phase 1 HP Motor . . . . . . . . . . . . . . . . . . . 193
AND8015 — Long Life Incandescent Lamps
using SIDACs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 201
AND8017 — Solid State Control for
Bi–Directional Motors . . . . . . . . . . . . . . . . . . . . . . . . . 205
Section 7: Mounting Techniques for Thyristors . . 208
Mounting Surface Considerations . . . . . . . . . . . . . . 209
Thermal Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . 210
Insulation Considerations . . . . . . . . . . . . . . . . . . . . . 211
Fastening Techniques . . . . . . . . . . . . . . . . . . . . . . . . 216
Insulated Packages . . . . . . . . . . . . . . . . . . . . . . . . . . 217
Surface Mount Devices . . . . . . . . . . . . . . . . . . . . . . . 219
Thermal System Evaluation . . . . . . . . . . . . . . . . . . . 221
Section 8: Reliability and Quality . . . . . . . . . . . . . . . 225
Using Transient Thermal Resistance Data in
High Power Pulsed Thyristor Applications . . . . . . 225
Thyristor Construction . . . . . . . . . . . . . . . . . . . . . . . . 237
In–Process Controls and Inspections . . . . . . . . . . . 237
Reliability Tests . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 238
Stress Testing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240
Environmental Testing . . . . . . . . . . . . . . . . . . . . . . . . 240
Section 9: Appendices . . . . . . . . . . . . . . . . . . . . . . . . . 241
Chapter 2: Selector Guide
SCRs: Silicon Controlled Rectifiers . . . . . . . . . . . . . . . 249
TRIACs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 252
Surge Suppressors and Triggers . . . . . . . . . . . . . . . . . 256
Chapter 3: Data Sheets
2N5060 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 258
2N6027, 2N6028 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 265
2N6071A/B Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 272
2N6344, 2N6349 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 278
2N6344A, 2N6348A, 2N6349A . . . . . . . . . . . . . . . . . . . . 283
2N6394 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 288
2N6400 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 293
2N6504 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 298
C106 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 303
C122F1, C122B1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 308
MAC08BT1, MAC08MT1 . . . . . . . . . . . . . . . . . . . . . . . . . 311
MAC4DCM, MAC4DCN . . . . . . . . . . . . . . . . . . . . . . . . . . 320
MAC4DHM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 328
Table of Contents (continued)
Chapter 3: Data Sheets (continued)
Page
MAC4DLM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 334
MAC4DSM, MAC4DSN . . . . . . . . . . . . . . . . . . . . . . . . . . 340
MAC4M, MAC4N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 348
MAC4SM, MAC4SN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 353
MAC8D, MAC8M, MAC8N . . . . . . . . . . . . . . . . . . . . . . . . 358
MAC8SD, MAC8SM, MAC8SN . . . . . . . . . . . . . . . . . . . . 363
MAC9D, MAC9M, MAC9N . . . . . . . . . . . . . . . . . . . . . . . . 369
MAC12D, MAC12M, MAC12N . . . . . . . . . . . . . . . . . . . . 374
MAC12HCD, MAC12HCM, MAC12HCN . . . . . . . . . . . . 379
MAC12SM, MAC12SN . . . . . . . . . . . . . . . . . . . . . . . . . . . 384
MAC15 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 389
MAC15A6FP, MAC15A8FP, MAC15A10FP . . . . . . . . . 394
MAC15M, MAC15N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 399
MAC15SD, MAC15SM, MAC15SN . . . . . . . . . . . . . . . . 404
MAC16CD, MAC16CM, MAC16CN . . . . . . . . . . . . . . . . 410
MAC16D, MAC16M, MAC16N . . . . . . . . . . . . . . . . . . . . 415
MAC16HCD, MAC16HCM, MAC16HCN . . . . . . . . . . . . 420
MAC97 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 425
MAC210A8, MAC210A10 . . . . . . . . . . . . . . . . . . . . . . . . . 433
MAC210A8FP, MAC210A10FP . . . . . . . . . . . . . . . . . . . . 438
MAC212A6FP, MAC212A8FP, MAC212A10FP . . . . . . 443
MAC212A8, MAC212A10 . . . . . . . . . . . . . . . . . . . . . . . . . 448
MAC218A6FP, MAC218A10FP . . . . . . . . . . . . . . . . . . . . 453
MAC223A6, MAC223A8, MAC223A10 . . . . . . . . . . . . . 457
MAC223A6FP, MAC223A8FP, MAC223A10FP . . . . . . 461
MAC224A Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 465
MAC228A Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470
MAC229A8FP, MAC229A10FP . . . . . . . . . . . . . . . . . . . . 474
MAC320A8FP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 478
MAC997 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 483
MCR08B, MCR08M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 491
MCR8DCM, MCR8DCN . . . . . . . . . . . . . . . . . . . . . . . . . . 499
MCR8DSM, MCR8DSN . . . . . . . . . . . . . . . . . . . . . . . . . . 504
MCR8M, MCR8N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 510
MCR8SD, MCR8SM, MCR8SN . . . . . . . . . . . . . . . . . . . 514
MCR12D, MCR12M, MCR12N . . . . . . . . . . . . . . . . . . . . 518
MCR12DCM, MCR12DCN . . . . . . . . . . . . . . . . . . . . . . . . 522
MCR12DSM, MCR12DSN . . . . . . . . . . . . . . . . . . . . . . . . 528
MCR12LD, MCR12LM, MCR12LN . . . . . . . . . . . . . . . . . 534
MCR16N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 538
MCR22–6, MCR22–8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 543
MCR25D, MCR25M, MCR25N . . . . . . . . . . . . . . . . . . . . 550
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Page
MCR68–2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555
MCR69–2, MCR69–3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 559
MCR72–3, MCR72–6, MCR72–8 . . . . . . . . . . . . . . . . . . 563
MCR100 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 566
MCR106–6, MCR106–8 . . . . . . . . . . . . . . . . . . . . . . . . . . 572
MCR218–2, MCR218–4, MCR218–6 . . . . . . . . . . . . . . . 575
MCR218–6FP, MCR218–10FP . . . . . . . . . . . . . . . . . . . . 579
MCR225–8FP, MCR225–10FP . . . . . . . . . . . . . . . . . . . . 584
MCR264–4, MCR264–6, MCR264–8 . . . . . . . . . . . . . . . 589
MCR265–4 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593
MCR703A Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 597
MCR716, MCR718 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 602
MKP1V120 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 607
MKP3V120, MKP3V240 . . . . . . . . . . . . . . . . . . . . . . . . . . 611
MMT05B230T3, MMT05B260T3, MMT05B310T3 . . . . 615
MMT10B230T3, MMT10B260T3, MMT10B310T3 . . . . 621
T2322B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 627
T2500D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 630
T2800D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 633
Chapter 4: Surface Mounting Guide –
Package Information and
Tape and Reel Specifications
Information for Using Surface Mount Thyristors . . . . . 638
Tape and Reel Packaging Specifications . . . . . . . . . . . 641
Surface Mount (DPAK, SMB, SOT–223) . . . . . . . . 641
Axial–Lead (DO–41, Surmetic 50) . . . . . . . . . . . . . . 644
TO–92 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 645
Chapter 5: Outline Dimensions and
Leadform Options
Outline Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 650
Leadform Options
TO–225AA (Case 77) . . . . . . . . . . . . . . . . . . . . . . . . 654
TO–220 (Case 221A) . . . . . . . . . . . . . . . . . . . . . . . . . 655
Chapter 6: Index and Cross Reference
Index and Cross Reference . . . . . . . . . . . . . . . . . . . . . . 657
 ABOUT THYRISTORS
Thyristors can take many forms, but they have certain
things in common. All of them are solid state switches
which act as open circuits capable of withstanding the
rated voltage until triggered. When they are triggered,
thyristors become low–impedance current paths and
remain in that condition until the current either stops or
drops below a minimum value called the holding level.
Once a thyristor has been triggered, the trigger current can
be removed without turning off the device.
Silicon controlled rectifiers (SCRs) and triacs are both
members of the thyristor family. SCRs are unidirectional
devices where triacs are bidirectional. An SCR is
designed to switch load current in one direction, while a
triac is designed to conduct load current in either
direction.
Structurally, all thyristors consist of several alternating
layers of opposite P and N silicon, with the exact structure
varying with the particular kind of device. The load is
applied across the multiple junctions and the trigger
current is injected at one of them. The trigger current
allows the load current to flow through the device, setting
up a regenerative action which keeps the current flowing
even after the trigger is removed.
These characteristics make thyristors extremely useful
in control applications. Compared to a mechanical switch,
a thyristor has a very long service life and very fast turn
on and turn off times. Because of their fast reaction times,
regenerative action and low resistance once triggered,
thyristors are useful as power controllers and transient
overvoltage protectors, as well as simply turning devices
on and off. Thyristors are used in motor controls,
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incandescent lights, home appliances, cameras, office
equipment, programmable logic controls, ground fault
interrupters, dimmer switches, power tools, telecommu-
nication equipment, power supplies, timers, capacitor
discharge ignitors, engine ignition systems, and many
other kinds of equipment.
Although thyristors of all sorts are generally rugged,
there are several points to keep in mind when designing
circuits using them. One of the most important is to
respect the devices’ rated limits on rate of change of
voltage and current (dv/dt and di/dt). If these are
exceeded, the thyristor may be damaged or destroyed. On
the other hand, it is important to provide a trigger pulse
large enough and fast enough to turn the gate on quickly
and completely. Usually the gate trigger current should be
at least 50 percent greater than the maximum rated gate
trigger current. Thyristors may be driven in many
different ways, including directly from transistors or logic
families, power control integrated circuits, by optoiso-
lated triac drivers, programmable unijunction transistors
(PUTs) and SIDACs. These and other design consider-
ations are covered in this manual.
Of interest too, is a new line of Thyristor Surge
Suppressors in the surface mount SMB package covering
surge currents of 50 and 100 amps, with breakover
voltages from 265 to 365 volts. These Thyristor Surge
Protection devices prevent overvoltage damage to sensi-
tive circuits by lightening, induction, and power line
crossing. They are breakover triggered crowbar protectors
with turn off occurring when the surge current falls below
the holding current value.

Page
Section 1: Symbols and Terminology . . . . . . . . . . . . . 11
Section 2: Theory of Thyristor Operation . . . . . . . . . 17
Basic Behavior . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Switching Characteristics . . . . . . . . . . . . . . . . . . . . . . 20
False Triggering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Theory of SCR Power Control . . . . . . . . . . . . . . . . . . 23
Triac Theory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Methods of Control . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Zero Point Switching Techniques . . . . . . . . . . . . . . . . 32
Section 3: Thyristor Drivers and Triggering . . . . . . . 36
Pulse Triggering of SCRs . . . . . . . . . . . . . . . . . . . . . . 36
Effect of Temperature, Voltage and Loads . . . . . . . . 40
Using Negative Bias and Shunting . . . . . . . . . . . . . . 42
Snubbing Thyristors . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Using Sensitive Gate SCRs . . . . . . . . . . . . . . . . . . . . 47
Drivers: Programmable Unijunction
Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Section 4: The SIDAC, A New High Voltage
Bilateral Trigger . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Section 5: SCR Characteristics . . . . . . . . . . . . . . . . . . 67
SCR Turn–Off Characteristics . . . . . . . . . . . . . . . . . . 67
SCR Turn–Off Mechanism . . . . . . . . . . . . . . . . . . . . . 67
SCR Turn–Off Time tq . . . . . . . . . . . . . . . . . . . . . . . . . 67
Parameters Affecting tq . . . . . . . . . . . . . . . . . . . . . . . . 72
Characterizing SCRs for Crowbar Applications . . . . 78
Switches as Line–Type Modulators . . . . . . . . . . . . . . 86
Parallel Connected SCRs . . . . . . . . . . . . . . . . . . . . . . 92
RFI Suppression in Thyristor Circuits . . . . . . . . . . . . 96
Section 6: Applications . . . . . . . . . . . . . . . . . . . . . . . . 100
Phase Control with Thyristors . . . . . . . . . . . . . . . . . 100
Motor Control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
Phase Control with Trigger Devices . . . . . . . . . . . . 109
Cycle Control with Optically Isolated
Triac Drivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
AC Power Control with Solid–State Relays . . . . . . 117
Triacs and Inductive Loads . . . . . . . . . . . . . . . . . . . . 121
Inverse Parallel SCRs for Power Control . . . . . . . . 124
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CHAPTER 1
Theory and Applications
Sections 1 thru 9
Page
Interfacing Digital Circuits to Thyristor
Controlled AC Loads . . . . . . . . . . . . . . . . . . . . . . . . 125
DC Motor Control with Thyristors . . . . . . . . . . . . . . . 134
Programmable Unijunction Transistor (PUT)
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
Triac Zero–Point Switch Applications . . . . . . . . . . . 143
AN1045 — Series Triacs in AC High Voltage
Switching Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148
AN1048 — RC Snubber Networks for Thyristor
Power Control and Transient Suppression . . . . . . . 159
AND8005 — Automatic AC Line Voltage
Selector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 181
AND8006 — Electronic Starter for Flourescent
Lamps . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184
AND8007 — Momentary Solid State Switch
for Split Phase Motors . . . . . . . . . . . . . . . . . . . . . . . . 188
AND8008 — Solid State Control Solutions
for Three Phase 1 HP Motor . . . . . . . . . . . . . . . . . . . 193
AND8015 — Long Life Incandescent Lamps
using SIDACs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 201
AND8017 — Solid State Control for
Bi–Directional Motors . . . . . . . . . . . . . . . . . . . . . . . . . 205
Section 7: Mounting Techniques for Thyristors . . 208
Mounting Surface Considerations . . . . . . . . . . . . . . 209
Thermal Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . 210
Insulation Considerations . . . . . . . . . . . . . . . . . . . . . 211
Fastening Techniques . . . . . . . . . . . . . . . . . . . . . . . . 216
Insulated Packages . . . . . . . . . . . . . . . . . . . . . . . . . . 217
Surface Mount Devices . . . . . . . . . . . . . . . . . . . . . . . 219
Thermal System Evaluation . . . . . . . . . . . . . . . . . . . 221
Section 8: Reliability and Quality . . . . . . . . . . . . . . . 225
Using Transient Thermal Resistance Data in
High Power Pulsed Thyristor Applications . . . . . . 225
Thyristor Construction . . . . . . . . . . . . . . . . . . . . . . . . 237
In–Process Controls and Inspections . . . . . . . . . . . 237
Reliability Tests . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 238
Stress Testing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240
Environmental Testing . . . . . . . . . . . . . . . . . . . . . . . . 240
Section 9: Appendices . . . . . . . . . . . . . . . . . . . . . . . . . 241
 SECTION 1
SYMBOLS AND TERMINOLOGY

SYMBOLS
The following are the most commonly used schematic symbols for Thyristors:

Name of Device Symbol

Silicon Controlled G
Rectifier (SCR) A K

Triac MT2 MT1

G

Thyristor Surge Protective

MT1 MT2
Devices & Sidac

Programmable Unijunction G
Transistor (PUT) A K

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THYRISTOR TERMINOLOGY (The following terms are used in SCR and TRIAC specifications.)

Symbol Terminology Definition

di/dt CRITICAL RATE OF RISE OF ON–STATE The maximum rate of change of current the device will
CURRENT withstand after switching from an off–state to an on–state
when using recommended gate drive. In other words, the
maximum value of the rate of rise of on–state current
which a Triac or SCR can withstand without damage.

(di/dt)c RATE OF CHANGE OF COMMUTATING Is the ability of a Triac to turn off itself when it is driving an
CURRENT (Triacs) inductive load and a resultant commutating dv/dt condi-
tion associated with the nature of the load.

dv/dt CRITICAL RATE OF RISE OF OFF–STATE Also, commonly called static dv/dt. It is the minimum
VOLTAGE value of the rate of rise of forward voltage which will
cause switching from the off–state to the on–state with
gate open.

IDRM PEAK REPETITIVE BLOCKING CURRENT The maximum value of current which will flow at VDRM
and specified temperature when the SCR or Triac is in the
off–state. Frequently referred to as leakage current in the
forward off–state blocking mode.

IGM FORWARD PEAK GATE CURRENT (SCR) The maximum peak gate current which may be safely
PEAK GATE CURRENT (Triac) applied to the device to cause conduction.

IGT GATE TRIGGER CURRENT The maximum value of gate current required to switch the
device from the off–state to the on–state under specified
conditions. The designer should consider the maximum
gate trigger current as the minimum trigger current value
that must be applied to the device in order to assure its
proper triggering.

IH HOLDING CURRENT The minimum current that must be flowing (MT1 & MT2;
cathode and anode) to keep the device in a regenerative
on–state condition. Below this holding current value the
device will return to a blocking state, off condition.

IL LATCHING CURRENT The minimum current that must be applied through the
main terminals of a Triac (or cathode and anode of an
SCR) in order to turn from the off–state to the on–state
while its IGT is being correctly applied.

IRRM PEAK REPETITIVE REVERSE BLOCKING The maximum value of current which will flow at VRRM and
CURRENT specified temperature when the SCR or Triac is in the
reverse mode, off–state. Frequently referred to as leakage
current in the reverse off–state blocking mode.

IT(AV) AVERAGE ON–STATE CURRENT (SCR) The maximum average on–state current the device may
safely conduct under stated conditions without incurring
damage.

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THYRISTOR TERMINOLOGY (The following terms are used in SCR and TRIAC specifications.)

Symbol Terminology Definition

ITM PEAK REPETITIVE ON–STATE CURRENT (SCR)
(also called PEAK DISCHARGE CURRENT)
Peak discharge current capability of a thyristor useful
when connected to discharge peak current usually from a
capacitor. This is a rarely specified parameter. (See
MCR68 and MCR69 data sheets, for examples where it is
specified.)

IT(RMS) ON–STATE RMS CURRENT The maximum value of on–state rms current that can be
applied to the device through the two main terminals of a
Triac (or cathode and anode if an SCR) on a continuous
basis.

ITSM PEAK NON–REPETITIVE SURGE CURRENT The maximum allowable non–repetitive surge current the
device will withstand at a specified pulse width, usually
specified at 60 Hz.

I2t CIRCUIT FUSING CONSIDERATIONS The maximum forward non–repetitive overcurrent capa-
(Current squared time) bility that the device is able to handle without damage.
Usually specified for one–half cycle of 60 Hz operation.

PG(AV) FORWARD AVERAGE GATE POWER (SCR) The maximum allowable value of gate power, averaged
AVERAGE GATE POWER (Triac) over a full cycle, that may be dissipated between the gate
and cathode terminal (SCR), or main terminal 1 if a Triac.

PGM FORWARD PEAK GATE POWER (SCR) The maximum instantaneous value of gate power
PEAK GATE POWER (Triac) dissipation between gate and cathode terminal for an
SCR or between gate and a main terminal MT1 for a
Triac, for a short pulse duration.

RθCA THERMAL RESISTANCE, The thermal resistance (steady–state) from the device
CASE–TO–AMBIENT case to the ambient.

RθJA THERMAL RESISTANCE, The thermal resistance (steady–state) from the semicon-
JUNCTION–TO–AMBIENT ductor junction(s) to the ambient.

RθJC THERMAL RESISTANCE, The thermal resistance (steady–state) from the semicon-
JUNCTION–TO–CASE ductor junction(s) to a stated location on the case.

RθJM THERMAL RESISTANCE, The thermal resistance (steady–state) from the semicon-
JUNCTION–TO–MOUNTING SURFACE ductor junction(s) to a stated location on the mounting
surface.

TA AMBIENT TEMPERATURE The air temperature measured below a device in an

environment of substantially uniform temperature,
cooled only by natural air currents and not materially
affected by radiant and reflective surfaces.

TC CASE TEMPERATURE The temperature of the device case under specified

conditions.

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THYRISTOR TERMINOLOGY (The following terms are used in SCR and TRIAC specifications.)

Symbol Terminology Definition

tgt TURN–ON TIME (SCR) The time interval between a specified point at the
(Also called Gate Controlled Turn–on Time) beginning of the gate pulse and the instant when the
device voltage has dropped to a specified low value
during the switching of an SCR from the off state to the
on state by a gate pulse.

TJ OPERATING JUNCTION TEMPERATURE The junction temperature of the device at the die level as
a result of ambient and load conditions. In other words,
the junction temperature must be operated within this
range to prevent permanent damage.

tq TURN–OFF TIME (SCR) The time interval between the instant when the SCR
current has decreased to zero after external switching of
the SCR voltage circuit and the instant when the thyristor
is capable of supporting a specified wave form without
turning on.

Tstg STORAGE TEMPERATURE The minimum and maximum temperature at which the
device may be stored without harm with no electrical
connections.

VDRM PEAK REPETITIVE OFF–STATE FORWARD The maximum allowed value of repetitive forward voltage
VOLTAGE which may be applied and not switch the SCR or Triac on
or do damage to the thyristor.

VGD GATE NON–TRIGGER VOLTAGE At the maximum rated operational temperature, and at a
specified main terminal off–state voltage applied, this
parameter specifies the maximum DC voltage that can
be applied to the gate and still not switch the device from
off–state to and on–state.

VGM FORWARD PEAK GATE VOLTAGE (SCR) The maximum peak value of voltage allowed between
PEAK GATE VOLTAGE (Triac) the gate and cathode terminals with these terminals
forward biased for an SCR. For a Triac, a bias condition
between the gate and main terminal MT1.

VGT GATE TRIGGER VOLTAGE The gate dc voltage required to produce the gate trigger
current.

V(Iso) RMS ISOLATION VOLTAGE The dielectric withstanding voltage capability of a

thyristor between the active portion of the device and the
heat sink. Relative humidity is a specified condition.

VRGM PEAK REVERSE GATE BLOCKING The maximum allowable peak reverse voltage applied to
VOLTAGE (SCR) the gate on an SCR. Measured at a specified IGR which
is the reverse gate current.

VRRM PEAK REPETITIVE REVERSE OFF–STATE The maximum allowed value of repetitive reverse voltage
VOLTAGE which may be applied and not switch the SCR or Triac on
or do damage to the thyristor.

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THYRISTOR TERMINOLOGY (The following terms are used in SCR and TRIAC specifications.)

Symbol Terminology Definition

VTM PEAK FORWARD ON–STATE VOLTAGE (SCR)
PEAK ON–STATE VOLTAGE (Triac)
The maximum voltage drop across the main terminals at
stated conditions when the devices are in the on–state
(i.e., when the thyristor is in conduction). To prevent
heating of the junction, the VTM is measured at a short
pulse width and low duty cycle.

ZθJA(t) TRANSIENT THERMAL IMPEDANCE, The transient thermal impedance from the semiconduc-
JUNCTION–TO–AMBIENT tor junction(s) to the ambient.

ZθJC(t) TRANSIENT THERMAL IMPEDANCE, The transient thermal impedance from the semiconduc-
JUNCTION–TO–CASE tor junction(s) to a stated location on the case.

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Thyristor Surge Protector Devices (TSPD) and Sidac Terminology*

Symbol Terminology Definition

IBO BREAKOVER CURRENT The breakover current IBO is the corresponding parame-
ter defining the VBO condition, that is, where breakdown
is occurring.

ID1, ID2 OFF–STATE CURRENT (TSPD) The maximum value of current which will flow at specific
voltages (VD1 and VD2) when the TSPD is clearly in the
off–state. Frequently referred to as leakage current.

Ipps PULSE SURGE SHORT CIRCUIT CURRENT The maximum pulse surge capability of the TSPD
NON–REPETITIVE (TSPD) (non–repetitive) under double exponential decay wave-
form conditions.

Ppk INSTANTANEOUS PEAK POWER Defines the instantaneous peak power dissipation when
DISSIPATION (TSPD) the TSPD (thyristor surge suppressor devices) are
subjected to specified surge current conditions.

Rs SWITCHING RESISTANCE (Sidac) The effective switching resistance usually under a

sinusoidal, 60 Hz condition.

VBO BREAKOVER VOLTAGE It is the peak voltage point where the device switches to
an on–state condition.

V(BR) BREAKDOWN VOLTAGE (TSPD) VBR is the voltage where breakdown occurs. Usually
given as a typical value for reference to the Design
Engineer.

VDM OFF–STATE VOLTAGE (TSPD) The maximum off–state voltage prior to the TSPD going
into a characteristic similar to an avalanche mode. When
a transient or line signal exceeds the VDM, the device
begins to avalanche, then immediately begins to
conduct.

VT ON–STATE VOLTAGE (TSPD) The maximum voltage drop across the terminals at
stated conditions when the TSPD devices are in the
on–state (i.e., conduction). To prevent overheating, VT is
measured at a short pulse width and a low duty cycle.

* All of the definitions on this page are for ones that were not already previously defined under Triac and SCR terminology.

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 SECTION 2
THEORY OF THYRISTOR OPERATION

Edited and Updated schematic symbol for an SCR, and Figure 2.1(b) shows
To successfully apply thyristors, an understanding of the P–N–P–N structure the symbol represents. In the
their characteristics, ratings, and limitations is imperative. two–transistor model for the SCR shown in Figure 2.1(c),
In this chapter, significant thyristor characteristics, the the interconnections of the two transistors are such that
basis of their ratings, and their relationship to circuit regenerative action occurs. Observe that if current is
design are discussed. injected into any leg of the model, the gain of the
Several different kinds of thyristors are shown in Table transistors (if sufficiently high) causes this current to be
2.1. Silicon Controlled Rectifiers (SCRs) are the most amplified in another leg. In order for regeneration to
widely used as power control elements; triacs are quite occur, it is necessary for the sum of the common base
popular in lower current (under 40 A) ac power applica- current gains (α) of the two transistors to exceed unity.
tions. Diacs, SUSs and SBSs are most commonly used as Therefore, because the junction leakage currents are
gate trigger devices for the power control elements. relatively small and current gain is designed to be low at
the leakage current level, the PNPN device remains off
Table 2.1. Thyristor Types unless external current is applied. When sufficient trigger
*JEDEC Titles Popular Names, Types current is applied (to the gate, for example, in the case of
an SCR) to raise the loop gain to unity, regeneration
Reverse Blocking Diode { Four Layer Diode, Silicon
Thyristor { Unilateral Switch (SUS)
occurs and the on–state principal current is limited
primarily by external circuit impedance. If the initiating
Reverse Blocking Triode { Silicon Controlled Rectifier trigger current is removed, the thyristor remains in the on
Thyristor { (SCR)
state, providing the current level is high enough to meet
Reverse Conducting Diode { Reverse Conducting Four the unity gain criteria. This critical current is called
Thyristor { Layer Diode latching current.
Reverse Conducting Triode { Reverse Conducting SCR In order to turn off a thyristor, some change in current
Thyristor must occur to reduce the loop gain below unity. From the
Bidirectional Triode Thyristor { Triac model, it appears that shorting the gate to cathode would
accomplish this. However in an actual SCR structure, the
* JEDEC is an acronym for the Joint Electron Device Engineering
Councils, an industry standardization activity co–sponsored by the
gate area is only a fraction of the cathode area and very
Electronic Industries Association (EIA) and the National Electrical little current is diverted by the short. In practice, the
Manufacturers Association (NEMA). principal current must be reduced below a certain level,
{ Not generally available. called holding current, before gain falls below unity and
turn–off may commence.
Before considering thyristor characteristics in detail, a In fabricating practical SCRs and Triacs, a “shorted
brief review of their operation based upon the common emitter” design is generally used in which, schematically,
two–transistor analogy of an SCR is in order. a resistor is added from gate to cathode or gate to MT1.
Because current is diverted from the N–base through the
BASIC BEHAVIOR
resistor, the gate trigger current, latching current and
The bistable action of thyristors is readily explained by holding current all increase. One of the principal reasons
analysis of the structure of an SCR. This analysis is for the shunt resistance is to improve dynamic perfor-
essentially the same for any operating quadrant of triac mance at high temperatures. Without the shunt, leakage
because a triac may be considered as two parallel SCRs current on most high current thyristors could initiate
oriented in opposite directions. Figure 2.1(a) shows the turn–on at high temperatures.

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 Sensitive gate thyristors employ a high resistance shunt from leakage, or avalanche breakdown of a blocking
or none at all; consequently, their characteristics can be junction. As a result, the breakover voltage of a thyristor
altered dramatically by use of an external resistance. An can be varied or controlled by injection of a current at the
external resistance has a minor effect on most shorted gate terminal. Figure 2.2 shows the interaction of gate
emitter designs. current and voltage for an SCR.
When the gate current Ig is zero, the applied voltage
must reach the breakover voltage of the SCR before
ANODE
switching occurs. As the value of gate current is
ANODE increased, however, the ability of a thyristor to support
applied voltage is reduced and there is a certain value of
gate current at which the behavior of the thyristor closely
GATE
resembles that of a rectifier. Because thyristor turn–on, as
CATHODE a result of exceeding the breakover voltage, can produce
(a) P
IB1 high instantaneous power dissipation non–uniformly
IC1 N N
ANODE IC2 distributed over the die area during the switching
IB2 P P
transition, extreme temperatures resulting in die failure
N
P may occur unless the magnitude and rate of rise of
N
principal current (di/dt) is restricted to tolerable levels.
GATE For normal operation, therefore, SCRs and triacs are
GATE P IK
N
operated at applied voltages lower than the breakover
voltage, and are made to switch to the on state by gate
(c)
signals high enough to assure complete turn–on indepen-
CATHODE CATHODE dent of the applied voltage. On the other hand, diacs and
(b) other thyristor trigger devices are designed to be triggered
by anode breakover. Nevertheless they also have di/dt and
Figure 2.1. Two–transistor analogy of an SCR: peak current limits which must be adhered to.
(a) schematic symbol of SCR; (b) P–N–P–N structure
represented by schematic symbol; (c) two–transistor
model of SCR.
–

Junction temperature is the primary variable affect-

ing thyristor characteristics. Increased temperatures
make the thyristor easier to turn on and keep on.
Consequently, circuit conditions which determine
turn–on must be designed to operate at the lowest
anticipated junction temperatures, while circuit condi-
tions which are to turn off the thyristor or prevent false
triggering must be designed to operate at the maximum
junction temperature.
Thyristor specifications are usually written with case
temperatures specified and with electrical conditions such
that the power dissipation is low enough that the junction
temperature essentially equals the case temperature. It is
incumbent upon the user to properly account for changes
in characteristics caused by the circuit operating condi-
tions different from the test conditions.
TRIGGERING CHARACTERISTICS
Turn–on of a thyristor requires injection of current to
raise the loop gain to unity. The current can take the form
of current applied to the gate, an anode current resulting
V
Ig4 Ig3 Ig2 Ig1 = 0
Figure 2.2. Thyristor Characteristics Illustrating
Breakover as a Function of Gate Current
A triac works the same general way for both positive
and negative voltage. However since a triac can be
switched on by either polarity of the gate signal regardless
of the voltage polarity across the main terminals, the
situation is somewhat more complex than for an SCR.
The various combinations of gate and main terminal
polarities are shown in Figure 2.3. The relative sensitivity
depends on the physical structure of a particular triac, but
as a rule, sensitivity is highest in quadrant I and quadrant
IV is generally considerably less sensitive than the others.

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 MT2(+) Although the criteria for turn–on have been described in
QUADRANT II QUADRANT I terms of current, it is more basic to consider the thyristor
as being charge controlled. Accordingly, as the duration
MT2(+), G(–) MT2(+), G(+)
of the trigger pulse is reduced, its amplitude must be
correspondingly increased. Figure 2.5 shows typical
behavior at various pulse widths and temperatures.
G(–) G(+) The gate pulse width required to trigger a thyristor also
QUADRANT III QUADRANT IV
depends upon the time required for the anode current to
MT2(–), G(–) MT2(–), G(+) reach the latching value. It may be necessary to maintain
a gate signal throughout the conduction period in
applications where the load is highly inductive or where
the anode current may swing below the holding value
MT2(–)
within the conduction period.
When triggering an SCR with a dc current, excess
Figure 2.3. Quadrant Definitions for a Triac
leakage in the reverse direction normally occurs if the
trigger signal is maintained during the reverse blocking
phase of the anode voltage. This happens because the
Gate sensitivity of a triac as a function of temperature is SCR operates like a remote base transistor having a gain
shown in Figure 2.4. which is generally about 0.5. When high gate drive
currents are used, substantial dissipation could occur in
30 the SCR or a significant current could flow in the load;
OFF–STATE VOLTAGE = 12 Vdc therefore, some means usually must be provided to
IGT, GATE TRIGGER CURRENT (mA)

20 ALL QUADRANTS remove the gate signal during the reverse blocking phase.
300
IGTM , PEAK GATE CURRENT (mA)

10 OFF–STATE VOLTAGE = 12 V
100
7 70
50
5 30
1 TJ = – 55°C
QUADRANT 2
3
3 4 25°C
– 80 – 60 – 40 – 20 0 20 40 60 80 100 120 10
TJ, JUNCTION TEMPERATURE (°C) 7
100°C
5
Figure 2.4. Typical Triac Triggering Sensitivity in the 3
Four Trigger Quadrants 0.2 0.5 1 2 5 10 20 50 100 200
PULSE WIDTH (µs)

Figure 2.5. Typical Behavior of Gate Trigger Current as

Since both the junction leakage currents and the current
Pulse Width and Temperature Are Varied
gain of the “transistor” elements increase with tempera-
ture, the magnitude of the required gate trigger current
decreases as temperature increases. The gate — which LATCH AND HOLD CHARACTERISTICS
can be regarded as a diode — exhibits a decreasing In order for the thyristor to remain in the on state when
voltage drop as temperature increases. Thus it is impor- the trigger signal is removed, it is necessary to have
tant that the gate trigger circuit be designed to deliver sufficient principal current flowing to raise the loop gain
sufficient current to the gate at the lowest anticipated to unity. The principal current level required is the
temperature. latching current, IL. Although triacs show some depen-
It is also advisable to observe the maximum gate dency on the gate current in quadrant II, the latching
current, as well as peak and average power dissipation current is primarily affected by the temperature on shorted
ratings. Also in the negative direction, the maximum gate emitter structures.
ratings should be observed. Both positive and negative In order to allow turn off, the principal current must be
gate limits are often given on the data sheets and they may reduced below the level of the latching current. The
indicate that protective devices such as voltage clamps current level where turn off occurs is called the holding
and current limiters may be required in some applications. current, IH. Like the latching current, the holding current
It is generally inadvisable to dissipate power in the is affected by temperature and also depends on the gate
reverse direction. impedance.

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 Reverse voltage on the gate of an SCR markedly The rise time is influenced primarily by the off–state
increases the latch and hold levels. Forward bias on voltage, as high voltage causes an increase in regenerative
thyristor gates may significantly lower the values shown gain. Of major importance in the rise time interval is the
in the data sheets since those values are normally given relationship between principal voltage and current flow
with the gate open. Failure to take this into account can through the thyristor di/dt. During this time the dynamic
cause latch or hold problems when thyristors are being voltage drop is high and the current density due to the
driven from transistors whose saturation voltages are a possible rapid rate of change can produce localized hot
few tenths of a volt. spots in the die. This may permanently degrade the
Thyristors made with shorted emitter gates are obvious- blocking characteristics. Therefore, it is important that
ly not as sensitive to the gate circuit conditions as devices power dissipation during turn–on be restricted to safe
which have no built–in shunt. levels.
Turn–off time is a property associated only with SCRs
SWITCHING CHARACTERISTICS
and other unidirectional devices. (In triacs of bidirectional
When triacs or SCRs are triggered by a gate signal, the devices a reverse voltage cannot be used to provide
turn–on time consists of two stages: a delay time, td, and a circuit–commutated turn–off voltage because a reverse
rise time, tr, as shown in Figure 2.6. The total gate voltage applied to one half of the structure would be a
controlled turn–on time, tgt, is usually defined as the time forward–bias voltage to the other half.) For turn–off times
interval between the 50 percent point of the leading edge in SCRs, the recovery period consists of two stages, a
of the gate trigger voltage and 90 percent point of the
reverse recovery time and a gate or forward blocking
principal current. The rise time tr is the time interval
recovery time, as shown in Figure 2.7.
required for the principal current to rise from 10 to 90
When the forward current of an SCR is reduced to zero
percent of its maximum value. A resistive load is usually
at the end of a conduction period, application of reverse
specified.
voltage between the anode and cathode terminals causes
reverse current flow in the SCR. The current persists until
90% POINT the time that the reverse current decreases to the leakage
PRINCIPAL level. Reverse recovery time (trr) is usually measured
VOLTAGE from the point where the principal current changes
10% POINT polarity to a specified point on the reverse current
0 waveform as indicated in Figure 2.7. During this period
the anode and cathode junctions are being swept free of
90% POINT charge so that they may support reverse voltage. A second
PRINCIPAL
CURRENT recovery period, called the gate recovery time, tgr, must
10% POINT elapse for the charge stored in the forward–blocking
0
junction to recombine so that forward–blocking voltage
td tr
can be reapplied and successfully blocked by the SCR.
ton The gate recovery time of an SCR is usually much longer
than the reverse recovery time. The total time from the
GATE instant reverse recovery current begins to flow to the start
CURRENT IGT
IGT 50%
50% POINT of the forward–blocking voltage is referred to as circuit–
0
commutated turn–off time tq.
(WAVESHAPES FOR A SENSITIVE LOAD) Turn–off time depends upon a number of circuit
conditions including on–state current prior to turn–off,
Figure 2.6. Waveshapes Illustrating Thyristor Turn–On rate of change of current during the forward–to–reverse
Time For A Resistive Load transition, reverse–blocking voltage, rate of change of
reapplied forward voltage, the gate bias, and junction
Delay time decreases slightly as the peak off–state temperature. Increasing junction temperature and on–
voltage increases. It is primarily related to the magnitude state current both increase turn–off time and have a more
of the gate–trigger current and shows a relationship which significant effect than any of the other factors. Negative
is roughly inversely proportional. gate bias will decrease the turn–off time.

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 REAPPLIED
dv/dt
PRINCIPAL
VOLTAGE FORWARD
0
REVERSE
di/dt
FORWARD
PRINCIPAL
CURRENT
0 below the holding current. At the instant the conducting
REVERSE
trr tgr
tq
Figure 2.7. Waveshapes Illustrating Thyristor
Turn–Off Time
For applications in which an SCR is used to control ac
power, during the entire negative half of the sine wave a
reverse voltage is applied. Turn off is easily accomplished
for most devices at frequencies up to a few kilohertz. For
applications in which the SCR is used to control the
output of a full–wave rectifier bridge, however, there is no
reverse voltage available for turn–off, and complete
turn–off can be accomplished only if the bridge output is
reduced close to zero such that the principal current is
reduced to a value lower than the device holding current
for a sufficiently long time. Turn–off problems may occur
even at a frequency of 60 Hz particularly if an inductive
load is being controlled.
In triacs, rapid application of a reverse polarity voltage
does not cause turn–off because the main blocking
junctions are common to both halves of the device. When
the first triac structure (SCR–1) is in the conducting state,
a quantity of charge accumulates in the N–type region as
a result of the principal current flow. As the principal
current crosses the zero reference point, a reverse current
is established as a result of the charge remaining in the
N–type region, which is common to both halves of the
device. Consequently, the reverse recovery current
becomes a forward current to the second half of the triac.
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The current resulting from stored charge causes the
second half of the triac to go into the conducting state in
the absence of a gate signal. Once current conduction has
been established by application of a gate signal, therefore,
complete loss in power control can occur as a result of
interaction within the N–type base region of the triac
unless sufficient time elapses or the rate of application of
the reverse polarity voltage is slow enough to allow nearly
all the charge to recombine in the common N–type region.
Therefore, triacs are generally limited to low–frequency
– 60 Hz applications. Turn–off or commutation of triacs is
more severe with inductive loads than with resistive loads
because of the phase lag between voltage and current
associated with inductive loads. Figure 2.8 shows the
waveforms for an inductive load with lagging current
power factor. At the time the current reaches zero
crossover (Point A), the half of the triac in conduction
begins to commutate when the principal current falls
half of the triac turns off, an applied voltage opposite the
current polarity is applied across the triac terminals (Point
B). Because this voltage is a forward bias to the second
half of the triac, the suddenly reapplied voltage in
conjunction with the remaining stored charge in the
high–voltage junction reduces the over–all device capa-
bility to support voltage. The result is a loss of power
control to the load, and the device remains in the
conducting state in absence of a gate signal. The measure
of triac turn–off ability is the rate of rise of the opposite
polarity voltage it can handle without remaining on. It is
called commutating dv/dt (dv/dt[c]). Circuit conditions
and temperature affect dv/dt(c) in a manner similar to the
way tq is affected in an SCR.
It is imperative that some means be provided to restrict
the rate of rise of reapplied voltage to a value which will
permit triac turn–off under the conditions of inductive
load. A commonly accepted method for keeping the
commutating dv/dt within tolerable levels is to use an RC
snubber network in parallel with the main terminals of the
triac. Because the rate of rise of applied voltage at the
triac terminals is a function of the load impedance and the
RC snubber network, the circuit can be evaluated under
worst–case conditions of operating case temperature and
maximum principal current. The values of resistance and
capacitance in the snubber area then adjusted so that the
rate of rise of commutating dv/dt stress is within the
specified minimum limit under any of the conditions
mentioned above. The value of snubber resistance should
be high enough to limit the snubber capacitance discharge
currents during turn–on and dampen the LC oscillation
during commutation. The combination of snubber values
having highest resistance and lowest capacitance that
provides satisfactory operation is generally preferred.

IH
V I A dr
c
dt
B
Figure 2.8. Inductive Load Waveforms
FALSE TRIGGERING
Circuit conditions can cause thyristors to turn on in the
absence of the trigger signal. False triggering may result
from:
1) A high rate of rise of anode voltage, (the dv/dt
effect).
2) Transient voltages causing anode breakover.
3) Spurious gate signals.
Static dv/dt effect: When a source voltage is suddenly
applied to a thyristor which is in the off state, it may
switch from the off state to the conducting state. If the
thyristor is controlling alternating voltage, false turn–on
resulting from a transient imposed voltage is limited to no
more than one–half cycle of the applied voltage because
turn–off occurs during the zero current crossing. How-
ever, if the principal voltage is dc voltage, the transient
may cause switching to the on state and turn–off could
then be achieved only by a circuit interruption.
The switching from the off state caused by a rapid rate
of rise of anode voltage is the result of the internal
capacitance of the thyristor. A voltage wavefront
impressed across the terminals of a thyristor causes a
capacitance–charging current to flow through the device
which is a function of the rate of rise of applied off–state
voltage (i = C dv/dt). If the rate of rise of voltage exceeds
a critical value, the capacitance charging current exceeds
the gate triggering current and causes device turn–on.
Operation at elevated junction temperatures reduces the
thyristor ability to support a steep rising voltage dv/dt
because of increased sensitivity.
dv/dt ability can be improved quite markedly in
sensitive gate devices and to some extent in shorted
emitter designs by a resistance from gate to cathode (or
MT1) however reverse bias voltage is even more effective
in an SCR. More commonly, a snubber network is used to
keep the dv/dt within the limits of the thyristor when the
gate is open.
TRANSIENT VOLTAGES: — Voltage transients
which occur in electrical systems as a result of distur-
bance on the ac line caused by various sources such as
energizing transformers, load switching, solenoid closure,
contractors and the like may generate voltages which are
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above the ratings of thyristors. Thyristors, in general,
switch from the off state to the on state whenever the
breakover voltage of the device is exceeded, and energy is
then transferred to the load. However, unless a thyristor is
specified for use in a breakover mode, care should be
exercised to ensure that breakover does not occur, as some
devices may incur surface damage with a resultant
degradation of blocking characteristics. It is good practice
when thyristors are exposed to a heavy transient environ-
ment to provide some form of transient suppression.
For applications in which low–energy, long–duration
transients may be encountered, it is advisable to use
thyristors that have voltage ratings greater than the
highest voltage transient expected in the system. The use
of voltage clipping cells (MOV or Zener) is also an
effective method to hold transient below thyristor ratings.
The use of an RC “snubber” circuit is effective in
reducing the effects of the high–energy short–duration
transients more frequently encountered. The snubber is
commonly required to prevent the static dv/dt limits from
being exceeded, and often may be satisfactory in limiting
the amplitude of the voltage transients as well.
For all applications, the dv/dt limits may not be
exceeded. This is the minimum value of the rate of rise
off–state voltage applied immediately to the MT1–MT2
terminals after the principal current of the opposing
polarity has decreased to zero.
SPURIOUS GATE SIGNALS: In noisy electrical
environments, it is possible for enough energy to cause
gate triggering to be coupled into the gate wiring by stray
capacitance or electromagnetic induction. It is therefore
advisable to keep the gate lead short and have the
common return directly to the cathode or MT1. In
extreme cases, shielded wire may be required. Another
aid commonly used is to connect a capacitance on the
order of 0.01 to 0.1 µF across the gate and cathode
terminals. This has the added advantage of increasing the
thyristor dv/dt capability, since it forms a capacitance
divider with the anode to gate capacitance. The gate
capacitor also reduces the rate of application of gate
trigger current which may cause di/dt failures if a high
inrush load is present.
THYRISTOR RATINGS
To insure long life and proper operation, it is important
that operating conditions be restrained from exceeding
thyristor ratings. The most important and fundamental
ratings are temperature and voltage which are interrelated
to some extent. The voltage ratings are applicable only up
to the maximum temperature ratings of a particular part
number. The temperature rating may be chosen by the
manufacturer to insure satisfactory voltage ratings,
switching speeds, or dv/dt ability.
OPERATING CURRENT RATINGS
Current ratings are not independently established as a
rule. The values are chosen such that at a practical case
temperature the power dissipation will not cause the
junction temperature rating to be exceeded.
Various manufacturers may chose different criteria to
establish ratings. At ON Semiconductors, use is made of
the thermal response of the semiconductor and worst case
values of on–state voltage and thermal resistance, to
guarantee the junction temperature is at or below its rated
value. Values shown on data sheets consequently differ
somewhat from those computed from the standard
formula:
TC(max) = T (rated) – RθJC  PD(AV)
where
TC (max) = Maximum allowable case temperature
T (rated) = Rated junction temperature or maximum
rated case temperature with zero principal
current and rated ac blocking voltage
applied.
RθJC = Junction to case thermal resistance
PD(AV) = Average power dissipation
The above formula is generally suitable for estimating
case temperature in situations not covered by data sheet
information. Worst case values should be used for thermal
resistance and power dissipation.
OVERLOAD CURRENT RATINGS
Overload current ratings may be divided into two types:
non–repetitive and repetitive.
Non–repetitive overloads are those which are not a part
of the normal application of the device. Examples of such
overloads are faults in the equipment in which the devices
are used and accidental shorting of the load. Non–repeti-
tive overload ratings permit the device to exceed its
maximum operating junction temperature for short peri-
ods of time because this overload rating applies following
any rated load condition. In the case of a reverse blocking
thyristor or SCR, the device must block rated voltage in
the reverse direction during the current overload. How-
ever, no type of thyristor is required to block off–stage
voltage at any time during or immediately following the
overload. Thus, in the case of a triac, the device need not
block in either direction during or immediately following
the overload. Usually only approximately one hundred
such current overloads are permitted over the life of the
device. These non–repetitive overload ratings just
described may be divided into two types: multicycle
(which include single cycle) and subcycle. For an SCR,
the multicycle overload current rating, or surge current
rating as it is commonly called, is generally presented as a
curve giving the maximum peak values of half sine wave
on–state current as a function of overload duration
measured in number of cycles for a 60 Hz frequency.
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For a triac, the current waveform used in the rating is a
full sine wave. Multicycle surge curves are used to select
proper circuit breakers and series line impedances to
prevent damage to the thyristor in the event of an
equipment fault.
The subcycle overload or subcycle surge rating curve is
so called because the time duration of the rating is usually
from about one to eight milliseconds which is less than the
time of one cycle of a 60 Hz power source. Overload peak
current is often given in curve form as a function of
overload duration. This rating also applies following any
rated load condition and neither off–state nor reverse
blocking capability is required on the part of the thyristor
immediately following the overload current. The subcycle
surge current rating may be used to select the proper
current–limiting fuse for protection of the thyristor in the
event of an equipment fault. Since this use of the rating is
so common, manufacturers simply publish the i2t rating in
place of the subcycle current overload curve because
fuses are commonly rated in terms of i2t. The i2t rating
can be approximated from the single cycle surge rating
(ITSM) by using:
 t/2
i2t = I2TSM
where the time t is the time base of the overload, i.e., 8.33
ms for a 60 Hz frequency.
Repetitive overloads are those which are an intended
part of the application such as a motor drive application.
Since this type of overload may occur a large number of
times during the life of the thyristor, its rated maximum
operating junction temperature must not be exceeded
during the overload if long thyristor life is required. Since
this type of overload may have a complex current
waveform and duty–cycle, a current rating analysis
involving the use of the transient thermal impedance
characteristics is often the only practical approach. In this
type of analysis, the thyristor junction–to–case transient
thermal impedance characteristic is added to the user’s
heat dissipator transient thermal impedance characteris-
tic. Then by the superposition of power waveforms in
conjunction with the composite thermal impedance curve,
the overload current rating can be obtained. The exact
calculation procedure is found in the power semiconduc-
tor literature.
THEORY OF SCR POWER CONTROL
The most common form of SCR power control is phase
control. In this mode of operation, the SCR is held in an
off condition for a portion of the positive half cycle and
then is triggered into an on condition at a time in the half
cycle determined by the control circuitry (in which the
circuit current is limited only by the load — the entire line
voltage except for a nominal one volt drop across the SCR
is applied to the load).
 One SCR alone can control only one half cycle of the
waveform. For full wave ac control, two SCRs are
connected in inverse parallel (the anode of each con-
nected to the cathode of the other, see Figure 2.9a). For
full wave dc control, two methods are possible. Two SCRs
may be used in a bridge rectifier (see Figure 2.9b) or one
SCR may be placed in series with a diode bridge (see
Figure 2.9c).
Figure 2.10 shows the voltage waveform along with
some common terms used in describing SCR operation.
Delay angle is the time, measured in electrical degrees,
during which the SCR is blocking the line voltage. The
period during which the SCR is on is called the
conduction angle.
It is important to note that the SCR is a voltage
controlling device. The load and power source determine
the circuit current.
Now we arrive at a problem. Different loads respond to
different characteristics of the ac waveform. Some loads
are sensitive to peak voltage, some to average voltage and
some to rms voltage. Figures 2.11(b) and 2.12(b) show the
various characteristic voltages plotted against the conduc-
tion angle for half wave and full wave circuits. These
voltages have been normalized to the rms of the applied
voltage. To determine the actual peak, average or rms
voltage for any conduction angle, we simply multiply the
normalized voltage by the rms value of the applied line
voltage. (These normalized curves also apply to current in
a resistive circuit.) Since the greatest majority of circuits
are either 115 or 230 volt power, the curves have been
redrawn for these voltages in Figures 2.11(a) and 2.12(a).
A relative power curve has been added to Figure 2.12
for constant impedance loads such as heaters. (Incandes-
cent lamps and motors do not follow this curve precisely
since their relative impedance changes with applied
voltage.) To use the curves, we find the full wave rated
power of the load, then multiply by the fraction associated
with the phase angle in question. For example, a 180°
conduction angle in a half wave circuit provides 0.5 x full
wave full–conduction power.
An interesting point is illustrated by the power curves.
A conduction angle of 30° provides only three per cent of
full power in a full wave circuit, and a conduction angle of
150° provides 97 per cent of full power. Thus, the control
circuit can provide 94 per cent of full power control with
a pulse phase variation of only 120°. Thus, it becomes
pointless in many cases to try to obtain conduction angles
less than 30° or greater than 150°.
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CONTROL CHARACTERISTICS
The simplest and most common control circuit for
phase control is a relaxation oscillator. This circuit is
shown diagrammatically as it would be used with an SCR
in Figure 2.13. The capacitor is charged through the
resistor from a voltage or current source until the
breakover voltage of the trigger device is reached. At that
time, the trigger device changes to its on state, and the
capacitor is discharged through the gate of the SCR.
Turn–on of the SCR is thus accomplished with a short,
high current pulse. Commonly used trigger devices are
programmable unijunction transistors, silicon bilateral
switches, SIDACs, optically coupled thyristors, and
power control integrated circuits. Phase control can be
obtained by varying the RC time constant of a charging
circuit so that trigger device turn–on occurs at varying
phase angles within the controlled half cycle.
If the relaxation oscillator is to be operated from a pure
dc source, the capacitor voltage–time characteristic is
shown in Figure 2.14. This shows the capacitor voltage as
it rises all the way to the supply voltage through several
time constants. Figure 2.14(b) shows the charge charac-
teristic in the first time constant greatly expanded. It is
this portion of the capacitor charge characteristic which is
most often used in SCR and Triac control circuits.
Generally, a design starting point is selection of a
capacitance value which will reliably trigger the thyristor
when the capacitor is discharged. Gate characteristics and
ratings, trigger device properties, and the load impedance
play a part in the selection. Since not all of the important
parameters for this selection are completely specified,
experimental determination is often the best method.
Low–current loads and strongly inductive circuits
sometimes cause triggering difficulty because the gate
current pulse goes away before the principal thyristor
current achieves the latching value. A series gate resistor
can be used to introduce a RC discharge time constant in
the gate circuit and lengthen trigger pulse duration
allowing more time for the main terminal current to rise to
the latching value. Small thyristors will require a series
gate resistance to avoid exceeding the gate ratings. The
discharge time constant of a snubber, if used, can also aid
latching. The duration of these capacitor discharge
duration currents can be estimated by
tw10 = 2.3 RC where tw10 = time for current to decay to
10% of the peak.
 LINE

CONTROL
CIRCUIT
LINE LOAD

CONTROL
(a)
CIRCUIT
ac Control
LOAD

(c)
One SCR dc Control

Figure 2.9. SCR Connections For Various Methods

Of Phase Control

FULL WAVE RECTIFIED OPERATION

VOLTAGE APPLIED TO LOAD

LINE CONTROL
CIRCUIT

DELAY ANGLE
LOAD
CONDUCTION ANGLE
(b)
Two SCR dc Control Figure 2.10. Sine Wave Showing Principles
Of Phase Control

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 APPLIED
VOLTAGE
230 V 115 V
1.8 360 180
HALF WAVE HALF WAVE
1.6 PEAK VOLTAGE 320 160
POWER AS FRACTION OF FULL CONDUCTION

1.4 280 140 PEAK VOLTAGE

NORMALIZED SINE WAVE rms VOLTAGE

1.2 240 120

1 200 100

VOLTAGE
rms rms
0.8 160 80

0.6 POWER 120 60

0.4 80 40

0.2 AVG 40 20 AVG

0 0 0
0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180
CONDUCTION ANGLE CONDUCTION ANGLE
(a) (b)
Figure 2.11. Half–Wave Characteristics Of Thyristor Power Control

APPLIED
VOLTAGE
230 V 115 V
1.8 360 180
FULL WAVE FULL WAVE
1.6 320 160
PEAK VOLTAGE
POWER AS FRACTION OF FULL CONDUCTION

1.4 280 140 PEAK VOLTAGE

NORMALIZED SINE WAVE rms VOLTAGE

1.2 240 120 rms

1 200 100
VOLTAGE

rms

0.8 POWER 160 80

0.6 120 60
AVG
AVG
0.4 80 40

0.2 40 20

0 0 0
0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180
CONDUCTION ANGLE CONDUCTION ANGLE
(a) (b)
Figure 2.12. Full–Wave Characteristics Of Thyristor Power Control

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 In many of the recently proposed circuits for low cost
operation, the timing capacitor of the relaxation oscillator
is charged through a rectifier and resistor using the ac
power line as a source. Calculations of charging time with
this circuit become exceedingly difficult, although they
are still necessary for circuit design. The curves of
Figure 2.14 simplify the design immensely. These curves
show the voltage–time characteristic of the capacitor
charged from one half cycle of a sine wave. Voltage is
normalized to the rms value of the sine wave for
convenience of use. The parameter of the curves is a new
term, the ratio of the RC time constant to the period of one
half cycle, and is denoted by the Greek letter τ. It may
most easily be calculated from the equation
τ = 2RCf. Where: R = resistance in Ohms
C = capacitance in Farads
f = frequency in Hertz.

0.9

0.8
FRACTION OF SUPPLY VOLTAGE

0.7 0.7
CAPACITOR VOLTAGE AS

0.6 0.6

FRACTION OF SUPPLY VOLTAGE

CAPACITOR VOLTAGE AS
0.5 0.5

0.4 0.4

0.3 0.3

0.2 0.2

0.1 0.1

0 0
0 1 2 3 4 5 6 0 0.2 0.4 0.6 0.8 1 1.2
TIME CONSTANTS TIME CONSTANTS

Figure 2.13(a). Capacitor Charging From dc Source Figure 2.13(b). Expanded Scale

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 1.80
APPLIED VOLTAGE, V
R
1.40 VC τ = 0.1
V C
0.2
NORMALIZED VOLTAGE AS A FRACTION OF

1.20
rms CHARGING SOURCE VOLTAGE

CAPACITOR 0.3
VOLTAGE, VC
1 0.4
0.5
0.80
0.707 0.7
0.60
1

0.40 1.5
2
3
0.20
5

0
0 20 40 60 80 100 120 140 160 180
180 160 140 120 100 80 60 40 30 20 0

DELAY ANGLE IN DEG.

CONDUCTION ANGLE IN DEG.

Figure 2.14(a). Capacitor Voltage When Charged

0.35
τ = 0.1 0.2 0.3 0.5 0.7 1 1.5 2
2.5
0.30
NORMALIZED VOLTAGE AS A FRACTION OF
rms CHARGING SOURCE VOLTAGE

3
0.25

0.20 4

5
0.15
7
0.10 10
15
0.05
20
50
0
0 20 40 60 80 100 120 140 160 180
180 160 140 120 100 80 60 40 20 0

DELAY ANGLE IN DEG.

CONDUCTION ANGLE IN DEG.

Figure 2.14(b). Expansion of Figure 2.15(a).

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 0.1
NORMALIZED VOLTAGE AS A FRACTION OF τ = 0.1 0.2 0.3 0.7 1 1.5 2 2.5 3 4 5 7 8.5
rms CHARGING SOURCE VOLTAGE 0.09
0.5 10
0.08
0.0696
0.07 12.5
0.06 15
0.05
20
0.04
0.03 35
0.02
0.01 50

0
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180 DELAY ANGLE
IN DEG.
180 170 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 CONDUCTION
ANGLE IN DEG.
rms CHARGING SOURCE VOLTAGE
Figure 2.14(c). Expansion of Figure 2.14(b)

To use the curves when starting the capacitor charge from
zero each half cycle, a line is drawn horizontally across
the curves at the relative voltage level of the trigger
breakdown compared to the rms sine wave voltage. The τ
is determined for maximum and minimum conduction
angles and the limits of R may be found from the equation
for τ.
An example will again clarify the picture. Consider the
same problem as the previous example, except that the
capacitor charging source is the 115 Vac, 60 Hz power
line.
The ratio of the trigger diode breakover voltage to the
RMS charging voltage is then
8/115 = 69.6  10–3.
A line drawn at 0.0696 on the ordinate of Figure 2.14(c)
shows that for a conduction angle of 30°, τ = 12, and for a
conduction angle of 150°, τ = 0.8. Therefore, since
R = τ/(2CF)
Rmax + 2(1.0
Rmin + 2(1
These values would require a potentiometer of 100 k in
series with a 6.2 k minimum fixed resistance.
The timing resistor must be capable of supplying the
highest switching current allowed by the SBS specifica-
tion at the switching voltage.
When the conduction angle is less than 90°, triggering
takes place along the back of the power line sine wave and
maximum firing current thru the SBS is at the start of SBS
breakover. If this current does not equal or exceed “ls” the
SBS will fail to trigger and phase control will be lost. This
can be prevented by selecting a lower value resistor and
larger capacitor. The available current can be determined
from Figure 2.14(a). The vertical line drawn from the
conduction angle of 30° intersects the applied voltage
curve at 0.707. The instantaneous current at breakover is
then
I = (0.707  115–8)/110 k = 733 µA.
When the conduction angle is greater than 90°,
triggering takes place before the peak of the sine wave. If
the current thru the SBS does not exceed the switching
current at the moment of breakover, triggering may still
take place but not at the predicted time because of the
additional delay for the rising line voltage to drive the
SBS current up to the switching level. Usually long
conduction angles are associated with low value timing
resistors making this problem less likely. The SBS current
at the moment of breakover can be determined by the
same method described for the trailing edge.
12
–
10 6)60
100 k ohms,
It is advisable to use a shunt gate–cathode resistor
across sensitive gate SCR’s to provide a path for leakage
currents and to insure that firing of the SCR causes
0.8
10–6 )60
6667 ohms.
turn–on of the trigger device and discharge of the gate
circuit capacitor.
TRIAC THEORY
The triac is a three–terminal ac semiconductor switch
which is triggered into conduction when a low–energy
signal is applied to its gate. Unlike the silicon controlled
rectifier or SCR, the triac will conduct current in either
direction when turned on. The triac also differs from the
SCR in that either a positive or negative gate signal will
trigger the triac into conduction. The triac may be thought
of as two complementary SCRs in parallel.

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 The triac offers the circuit designer an economical and
versatile means of accurately controlling ac power. It has
several advantages over conventional mechanical
switches. Since the triac has a positive “on” and a zero
current “off” characteristic, it does not suffer from the
contact bounce or arcing inherent in mechanical switches.
The switching action of the triac is very fast compared to
conventional relays, giving more accurate control. A triac
can be triggered by dc, ac, rectified ac or pulses. Because
of the low energy required for triggering a triac, the
control circuit can use any of many low–cost solid–state
devices such as transistors, bilateral switches, sensitive–
gate SCRs and triacs, optically coupled drivers and
integrated circuits.
CHARACTERISTICS OF THE TRIAC
Figure 2.15(a) shows the triac symbol and its relation-
ship to a typical package. Since the triac is a bilateral
device, the terms “anode” and “cathode” used for
unilateral devices have no meaning. Therefore, the
terminals are simply designated by MT1, MT2, and G,
where MT1 and MT2 are the current–carrying terminals,
and G, is the gate terminal used for triggering the triac. To
avoid confusion, it has become standard practice to
specify all currents and voltages using MT1 as the
reference point.
The basic structure of a triac is shown in Figure 2.15(b).
This drawing shows why the symbol adopted for the triac
consists of two complementary SCRs with a common
gate. The triac is a five–layer device with the region
between MT1 and MT2 being P–N–P–N switch (SCR) in
parallel with a N–P–N–P switch (complementary SCR).
Also, the structure gives some insight into the triac’s
ability to be triggered with either a positive or negative
gate signal. The region between MT1 and G consists of
two complementary diodes. A positive or negative gate
signal will forward–bias one of these diodes causing the
same transistor action found in the SCR. This action
breaks down the blocking junction regardless of the
polarity of MT1. Current flow between MT2 and MT1
then causes the device to provide gate current internally. It
will remain on until this current flow is interrupted.
The voltage–current characteristic of the triac is shown
in Figure 2.16 where, as previously stated, MT1 is used as
the reference point. The first quadrant, Q–I, is the region
where MT2 is positive with respect to MT1 and quadrant
III is the opposite case. Several of the terms used in
characterizing the triac are shown on the figure. VDRM is
the breakover voltage of the device and is the highest
voltage the triac may be allowed to block in either
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30
direction. If this voltage is exceeded, even transiently, the
triac may go into conduction without a gate signal.
Although the triac is not damaged by this action if the
current is limited, this situation should be avoided
because control of the triac is lost. A triac for a particular
application should have VDRM at least as high as the peak
of the ac waveform to be applied so reliable control can be
maintained. The holding current (IH) is the minimum
value of current necessary to maintain conduction. When
the current goes below IH, the triac ceases to conduct and
reverse to the blocking state. IDRM is the leakage current
of the triac with VDRM applied from MT2 to MT1 and is
several orders of magnitude smaller than the current
rating of the device. The figure shows the characteristic of
the triac without a gate signal applied but it should be
noted that the triac can be triggered into the on state at any
value of voltage up to VDRM by the application of a gate
signal. This important characteristic makes the triac very
useful.
Since the triac will conduct in either direction and can
be triggered with either a positive or negative gate signal
there are four possible triggering modes (Figure 2.3):
Quadrant I; MT2(+), G(+), positive voltage and positive
gate current. Quadrant II; MT2(+), G(–), positive
voltage and negative gate current. Quadrant III;
MT2(–), G(–), negative voltage and negative gate
current. Quadrant IV; MT2(–), G(+), negative voltage
and positive gate current.
Present triacs are most sensitive in quadrants I and III,
slightly less so in quadrant II, and much less sensitive in
quadrant IV. Therefore it is not recommended to use
quadrant IV unless special circumstances dictate it.
An important fact to remember is that since a triac can
conduct current in both directions, it has only a brief
interval during which the sine wave current is passing
through zero to recover and revert to its blocking state.
For this reason, reliable operation of present triacs is
limited to 60 Hz line frequency and lower frequencies.
For inductive loads, the phase–shift between the current
and voltage means that at the time the current falls below
IH and the triac ceases to conduct, there exists a certain
voltage which must appear across the triac. If this voltage
appears too rapidly, the triac will resume conduction and
control is lost. In order to achieve control with certain
inductive loads, the rate of rise in voltage (dv/dt) must be
limited by a series RC network across the triac. The
capacitor will then limit the dv/dt across the triac. The
resistor is necessary to limit the surge of current from the
capacitor when the triac fires, and to damp the ringing of
the capacitance with the load inductance.
 MT2 PHASE CONTROL
An effective and widely–used method of controlling the
average power to a load through the triac is by phase
control. Phase control is a method of utilizing the triac to
GATE
apply the ac supply to the load for a controlled fraction of
each cycle. In this mode of operation, the triac is held in
MT1 an off or open condition for a portion of each positive and
(a) negative cycle, and then is triggered into an on condition
at a time in the half cycle determined by the control
MT2 circuitry. In the on condition, the circuit current is limited
only by the load — i.e., the entire line voltage (less the
forward drop of the triac) is applied to the load.
Figure 2.17 shows the voltage waveform along with
P N
some common terms used in describing triac operation.
N Delay angle is the angle, measured in electrical degrees,
during which the triac is blocking the line voltage. The
P
N N period during which the triac is on is called the
conduction angle.
It is important to note that the triac is either off
MT1 G (blocking voltage) or fully on (conducting). When it is in
(b) the on condition, the circuit current is determined only by
Figure 2.15. Triac Structure and Symbol the load and the power source.
As one might expect, in spite of its usefulness, phase
control is not without disadvantages. The main disadvan-
Q1
tage of using phase control in triac applications is the
ON–STATE generation of electro–magnetic interference (EMI). Each
MT2+
BLOCKING time the triac is fired the load current rises from zero to
STATE the load–limited current value in a very short time. The
VDRM VDRM
I IH resulting di/dt generates a wide spectrum of noise which
IDRM
may interfere with the operation of nearby electronic
V
equipment unless proper filtering is used.
IH IDRM ZERO POINT SWITCHING
BLOCKING STATE In addition to filtering, EMI can be minimized by
QIII zero–point switching, which is often preferable. Zero–
MT2—ON–STATE point switching is a technique whereby the control
element (in this case the triac) is gated on at the instant the
Figure 2.16. Triac Voltage–Current Characteristic sine wave voltage goes through zero. This reduces, or
eliminates, turn–on transients and the EMI. Power to the
load is controlled by providing bursts of complete sine
waves to the load as shown in Figure 2.18. Modulation
can be on a random basis with an on–off control, or a
proportioning basis with the proper type of proportional
control.
In order for zero–point switching to be effective, it must
indeed be zero point switching. If a triac is turned on with
METHODS OF CONTROL as little as 10 volts across it into a load of a few–hundred
watts, sufficient EMI will result to nullify the advantages
AC SWITCH
of adopting zero–point switching in the first place.
A useful application of triac is as a direct replacement
for an ac mechanical relay. In this application, the triac BASIC TRIAC AC SWITCHES
furnishes on–off control and the power–regulating ability Figure 2.19 shows methods of using the triac as an
of the triac is not utilized. The control circuitry for this on–off switch. These circuits are useful in applications
application is usually very simple, consisting of a source where simplicity and reliability are important. As pre-
for the gate signal and some type of small current switch, viously stated, there is no arcing with the triac, which can
either mechanical or electrical. The gate signal can be be very important in some applications. The circuits are
obtained from a separate source or directly from the line for resistive loads as shown and require the addition of a
voltage at terminal MT2 of the triac. dv/dt network across the triac for inductive loads.

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Figure 2.19(a) shows low–voltage control of the triac.
When switch S1 is closed, gate current is supplied to the
triac from the 10 volt battery. In order to reduce surge
current failures during turn on (ton), this current should be
5 to 10 times the maximum gate current (IGT) required to
trigger the triac.
The triac turns on and remains on until S1 is opened.
This circuit switches at zero current except for initial turn
on. S1 can be a very–low–current switch because it carries
only the triac gate current.
Figure 2.19(b) shows a triac switch with the same
characteristics as the circuit in Figure 2.19(a) except the
need for a battery has been eliminated. The gate signal is
obtained from the voltage at MT2 of the triac prior to turn
on.
The circuit shown in Figure 2.19(c) is a modification of
Figure 2.19(b). When switch S1 is in position one, the
triac receives no gate current and is non–conducting. With
S1 in position two, circuit operation is the same as that for
Figure 2.19(b). In position three, the triac receives gate
current only on positive half cycles. Therefore, the triac
conducts only on positive half cycles and the power to the
load is half wave.
Figure 2.19(d) shows ac control of the triac. The pulse
can be transformer coupled to isolate power and control
circuits. Peak current should be 10 times IGT(max) and the
RC time constant should be 5 times ton(max). A high
frequency pulse (1 to 5 kHz) is often used to obtain zero
point switching.
VOLTAGE APPLIED TO LOAD
DELAY ANGLE
CONDUCTION ANGLE
Figure 2.17. Sine Wave Showing Principles
of Phase Control
ZERO POINT SWITCHING TECHNIQUES
Zero–point switches are highly desirable in many
applications because they do not generate electro–mag-
netic interference (EMI). A zero–point switch controls
sine–wave power in such a way that either complete
cycles or half cycles of the power supply voltage are
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applied to the load as shown in Figure 2.20. This type of
switching is primarily used to control power to resistive
loads such as heaters. It can also be used for controlling
the speed of motors if the duty cycle is modulated by
having short bursts of power applied to the load and the
load characteristic is primarily inertial rather than fric-
tional. Modulation can be on a random basis with an
on–off control, or on a proportioning basis with the proper
type of proportioning control.
In order for zero–point switching to be effective, it must
be true zero–point switching. If an SCR is turned on with
an anode voltage as low as 10 volts and a load of just a
few hundred watts, sufficient EMI will result to nullify the
advantages of going to zero–point switching in the first
place. The thyristor to be turned on must receive gate
drive exactly at the zero crossing of the applied voltage.
The most successful method of zero–point thyristor
control is therefore, to have the gate signal applied before
the zero crossing. As soon as the zero crossing occurs,
anode voltage will be supplied and the thyristor will come
on. This is effectively accomplished by using a capacitor
to derive a 90° leading gate signal from the power line
source. However, only one thyristor can be controlled
from this phase–shifted signal, and a slaving circuit is
necessary to control the other SCR to get full–wave power
control. These basic ideas are illustrated in Figure 2.21.
The slaving circuit fires only on the half cycle after the
firing of the master SCR. This guarantees that only
complete cycles of power will be applied to the load. The
gate signal to the master SCR receives all the control; a
convenient control method is to replace the switch with a
low–power transistor, which can be controlled by bridge–
sensing circuits, manually controlled potentiometers, or
various other techniques.
LOAD
VOLTAGE
HALF POWER TO LOAD
LINE
VOLTAGE
FULL POWER TO LOAD
Figure 2.18. Sine Wave Showing Principles of
Zero–Point Switching
 15 Ω
LOAD

LOAD VOLTAGE

115 VAC R1
2N6346
60 Hz 47 Ω S1
LINE VOLTAGE
+
10 V

(a): Low Voltage Controlled Triac Switch Figure 2.20. Load Voltage and Line Voltage for
25% Duty Cycle

15 Ω A basic SCR is very effective and trouble free.

LOAD
However, it can dissipate considerable power. This must
R1 be taken into account in designing the circuit and its
100 Ω packaging.
In the case of triacs, a slaving circuit is also usually
115 VAC S1
60 Hz
2N6342 required to furnish the gate signal for the negative half
cycle. However, triacs can use slave circuits requiring less
power than do SCRs as shown in Figure 2.21. Other
considerations being equal, the easier slaving will some-
times make the triac circuit more desirable than the SCR
(b): Triac ac Static Contactor circuit.
Besides slaving circuit power dissipation, there is
another consideration which should be carefully checked
15 Ω
LOAD
when using high–power zero–point switching. Since this
is on–off switching, it abruptly applies the full load to the
power line every time the circuit turns on. This may cause
S1 a temporary drop in voltage which can lead to erratic
3 1 operation of other electrical equipment on the line (light
115 VAC 2 2N6342 dimming, TV picture shrinkage, etc.). For this reason,
60 Hz
loads with high cycling rates should not be powered from
R1
the same supply lines as lights and other voltage–sensitive
100 Ω
devices. On the other hand, if the load cycling rate is slow,
say once per half minute, the loading flicker may not be
(c): 3 Position Static Switch objectionable on lighting circuits.
A note of caution is in order here. The full–wave
zero–point switching control illustrated in Figure 2.21
15 Ω
LOAD should not be used as a half–wave control by removing
the slave SCR. When the slave SCR in Figure 2.21 is
removed, the master SCR has positive gate current
flowing over approximately 1/4 of a cycle while the SCR
itself is in the reverse–blocking state. This occurs during
2N6346
R1 the negative half cycle of the line voltage. When this
condition exists, Q1 will have a high leakage current with
full voltage applied and will therefore be dissipating high
power. This will cause excessive heating of the SCR and
may lead to its failure. If it is desirable to use such a
(d): AC Controlled Triac Switch circuit as a half–wave control, then some means of
clamping the gate signal during the negative half cycle
Figure 2.19. Triac Switches must be devised to inhibit gate current while the SCR is
reverse blocking. The circuits shown in Figures 2.23 and
2.24 do not have this disadvantage and may be used as
half–wave controls.

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 OPERATION
2 µF LOAD The zero–point switches shown in Figure 2.23 and 2.24
200 V are used to insure that the control SCR turns on at the start
AC LINE 150
1W Q1
of each positive alternation. In Figure 2.23 a pulse is
(MASTER) Q2
generated before the zero crossing and provides a small
(SLAVE)
amount of gate current when line voltage starts to go
Figure 2.21. Slave and Master SCRs for positive. This circuit is primarily for sensitive–gate SCRs.
Zero–Point Switching Less–sensitive SCRs, with their higher gate currents,
normally require smaller values for R1 and R2 and the
result can be high power dissipation in these resistors. The
circuit of Figure 2.24 uses a capacitor, C2, to provide a
low–impedance path around resistors R1 and R2 and can
be used with less–sensitive, higher–current SCRs without
1.2 k 2 µF
7W 200 V increasing the dissipation. This circuit actually oscillates
near the zero crossing point and provides a series of pulses
AC LINE 150 MAC210A8 to assure zero–point switching.
1W The basic circuit is that shown in Figure 2.23.
Operation begins when switch S1 is closed. If the positive
ON–OFF LOAD alternation is present, nothing will happen since diode D1
CONTROL
is reverse biased. When the negative alternation begins,
capacitor C1 will charge through resistor R2 toward the
Figure 2.22. Triac Zero–Point Switch limit of voltage set by the voltage divider consisting of
resistors R1 and R2. As the negative alternation reaches
its peak, C1 will have charged to about 40 volts. Line
voltage will decrease but C1 cannot discharge because
diode D2 will be reverse biased. It can be seen that C1 and
three–layer diode D4 are effectively in series with the
S1
line. When the line drops to 10 volts, C1 will still be 40
D1 LOAD
volts positive with respect to the gate of Q1. At this time
AC 1N4004
C1 D4 Q1
D4 will see about 30 volts and will trigger. This allows C1
LINE R1 0.25 µF 1N5760
3.8 k MCR22–6 to discharge through D3, D4, the gate of Q1, R2, and R1.
This discharge current will continue to flow as the line
R2 D2 D3
8.2 k R3 voltage crosses zero and will insure that Q1 turns on at the
1W 1N4004 1N4004 1k
start of the positive alternation. Diode D3 prevents
reverse gate–current flow and resistor R3 prevents false
Figure 2.23. Sensitive–Gate Switch triggering.
The circuit in Figure 2.24 operates in a similar manner
up to the point where C1 starts to discharge into the gate.
The discharge path will now be from C1 through D3, D4,
R3, the gate of Q1, and capacitor C2. C2 will quickly
S1 C1 charge from this high pulse of current. This reduces the
D1 0.25 µF LOAD voltage across D4 causing it to turn off and again revert to
1N4004 200 V
AC its blocking state. Now C2 will discharge through R1 and
D3 D4
LINE R1
1N4004 1N5760 Q1 R2 until the voltage on D4 again becomes sufficient to
C2 3.8 k MCR218–4
10 nF cause it to break back. This repetitive exchange of charge
200 V R2 D2 R3 from C1 to C2 causes a series of gate–current pulses to
8.2 k 1N4004 100
1W flow as the line voltage crosses zero. This means that Q1
will again be turned on at the start of each positive
Figure 2.24. Zero–Point Switch alternation as desired. Resistor R3 has been added to limit
the peak gate current.

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AN SCR SLAVING CIRCUIT
An SCR slaving circuit will provide full–wave control
of an ac load when the control signal is available to only
one of a pair of SCRs. An SCR slaving circuit is
commonly used where the master SCR is controlled by
zero–point switching. Zero–point switching causes the
load to receive a full cycle of line voltage whenever the
control signal is applied. The duty cycle of the control
signal therefore determines the average amount of power
supplied to the load. Zero–point switching is necessary for
large loads such as electric heaters because conventional
phase–shift techniques would generate an excessive
amount of electro–magnetic interference (EMI).
This particular slaving circuit has two important
advantages over standard RC discharge slaving circuits. It
derives these advantages with practically no increase in
price by using a low–cost transistor in place of the
current–limiting resistor normally used for slaving. The
first advantage is that a large pulse of gate current is
available at the zero–crossing point. This means that it is
not necessary to select sensitive–gate SCRs for control-
ling power. The second advantage is that this current
pulse is reduced to zero within one alternation. This has a
couple of good effects on the operation of the slaving
SCR. It prevents gate drive from appearing while the SCR
is reverse–biased, which would produce high power
dissipation within the device. It also prevents the slaved
SCR from being turned on for additional half cycles after
the drive is removed from the control SCR.
OPERATION
The SCR slaving circuit shown in Figure 2.25 provides
a single power pulse to the gate of SCR Q2 each time SCR
Q1 turns on, thus turning Q2 on for the half cycle
following the one during which Q1 was on. Q2 is
therefore turned on only when Q1 is turned on, and the
load can be controlled by a signal connected to the gate of
Q1 as shown in the schematic. The control signal an be
either dc or a power pulse. If the control signal is
synchronized with the power line, this circuit will make
an excellent zero–point switch. During the time that Q1 is
on, capacitor C1 is charged through R1, D1 and Q1. While
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35
C1 is being charged, D1 reverse–biases the base–emitter
junction of Q3, thereby holding it off. The charging time
constant, R1, C1, is set long enough that C1 charges for
practically the entire half cycle. The charging rate of C1
follows an “S” shaped curve, charging slowly at first, then
faster as the supply voltage peaks, and finally slowly
again as the supply voltage decreases. When the supply
voltage falls below the voltage across C1, diode D1
becomes reverse biased and the base–emitter of Q3
becomes forward biased. For the values shown, this
occurs approximately 6° before the end of the half cycle
conduction of Q1. The base current is derived from the
energy stored in C1. This turns on Q3, discharging C1
through Q3 and into the gate of Q2. As the voltage across
C1 decreases, the base drive of Q3 decreases and
somewhat limits the collector current. The current pulse
must last until the line voltage reaches a magnitude such
that latching current will exist in Q2. The values shown
will deliver a current pulse which peaks at 100 mA and
has a magnitude greater than 50 mA when the anode–
cathode voltage of Q2 reaches plus 10 volts. This circuit
completely discharges C1 during the half cycle that Q2 is
on. This eliminates the possibility of Q2 being slaved for
additional half cycles after the drive is removed from Q1.
The peak current and the current duration are controlled
by the values of R1 and C1. The values chosen provide
sufficient drive for “shorted emitter” SCRs which typi-
cally require 10 to 20 mA to fire. The particular SCR used
must be capable of handling the maximum current
requirements of the load to be driven; the 8 ampere, 200 V
SCRs shown will handle a 1000 watt load.
10 k
2W R1
1000 W MAX
1N4004
120 VAC + 5 µF
60 Hz C1 50 V
Q1 Q3
2N6397 CONTROL MPS
Q2
SCR 3638
2N6397
INPUT SIGNAL
*1000 WATT LOAD. SEE TEXT.
Figure 2.25. SCR Slave Circuit
 SECTION 3
THYRISTOR DRIVERS AND TRIGGERING

Edited and Updated 1.0

Triggering a thyristor requires meeting its gate energy W ≥ BASE WIDTH

specifications and there are many ways of doing this. In L ≥ DIFFUSION LENGTH
general, the gate should be driven hard and fast to ensure 0.8
complete gate turn on and thus minimize di/dt effects.

a , COMMON BASE CURRENT GAIN

Usually this means a gate current of at least three times
the gate turn on current with a pulse rise of less than one
W
L
+ 0.1
+ 0.5
microsecond and a pulse width greater than 10 microse- 0.6
W
+ 1.0
conds. The gate can also be driven by a dc source as long L W
as the average gate power limits are met. L
Some of the methods of driving the gate include:
0.4
1) Direct drive from logic families of transistors
2) Opto triac drivers
3) Programmable unijunction transistors (PUTs)
4) SIDACs 0.2

In this chapter we will discuss all of these, as well as

some of the important design and application consider-
ations in triggering thyristors in general. In the chapter 0
on applications, we will also discuss some additional 10–3 10–2 10–1 1.0 10 102
considerations relating to drivers and triggers in EMITTER CURRENT DENSITY (mA/mm2)
specific applications. Figure 3.1. Typical Variation of Transistor α with
Emitter Current Density
PULSE TRIGGERING OF SCRs
GATE TURN–ON MECHANISM Using the two transistor analysis, the anode current, IA,
can be expressed as a function of gate current, IG, as:
a2 IG ) ICS1 ) ICS2
The turn–on of PNPN devices has been discussed in many
papers where it has been shown that the condition of I
A
+ 1*a *a
(1)
switching is given by dv = 0 (i.e., α1 + α2 = 1, where α1 1 2
di Definitions and derivations are given in Appendix I.
and α2 are the current amplification factors of the two
Note that the anode current, IA, will increase to infinity as
“transistors.’’ However, in the case of an SCR connected
α1 + α2 = 1. This analysis is based upon the assumption
to a reverse gate bias, the device can have α1 + α2 = 1 and
that no majority carrier current flows out of the gate
u
still stay in the blocking state. The condition of turn–on is
circuit. When no such assumption is made, the condition
actually α1 + α2 1.
for turn–on is given by:

+ 1 *a a1
The current amplification factor, α, increases with
IK
emitter current; some typical curves are shown in (2)
Figure 3.1. The monotonical increase of α with IE of the IA 2

u1 (see Appendix I).

device in the blocking state makes the regeneration of
current (i.e., turn–on) possible. which corresponds to α1 + α2

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 J1 J2 J3
IA
P1 N1 P2 N2
ANODE
(A)
IG
GATE (G)
Figure 3.2. Schematic Structure of an SCR, Positive
Currents Are Defined as Shown by the Arrows
Current regeneration starts when charge or current is
introduced through the gate (Figure 3.2). Electrons are
injected from the cathode across J3; they travel across
the P2 “base’’ region to be swept out by the collector
junction, J2, and thrown into the N1 base. The increase of
majority carrier electrons in region N1 decreases the
potential in region N1, so that holes from P1 are injected
across the junction J1, into the N1 “base’’ region to be
swept across J2, and thrown into the P2 “base’’ region.
The increase in the potential of region P2 causes more
electrons to be injected into P2, thereby repeating the
cycle. Since α increases with the emitter current, an
increase of regeneration takes place until α1 + α2 1.
CURRENT PULSE TRIGGERING
IK Current pulse triggering is defined as supplying current
through the gate to compensate for the carriers lost by
CATHODE recombination in order to provide enough current to
(K)
sustain increasing regeneration. If the gate is triggered
with a current pulse, shorter pulse widths require higher
currents as shown by Figure 3.3(a). Figure 3.3(a) seems
to indicate there is a constant amount of charge required
to trigger on the device when IG is above a threshold level.
When the charge required for turn–on plotted versus
pulse current or pulse width, there is an optimum range of
current levels or pulse widths for which the charge is
minimum, as shown in region A of Figure 3.3(b) and (c).
Region C shows that for lower current levels (i.e., longer
minimum pulse widths) more charge is required to trigger
on the device. Region B shows increasing charge required
as the current gets higher and the pulse width smaller.
100
VAK = 10 V
TA = 25°C
u
i G , MINIMUM GATE TRIGGER CURRENT (mA)

80
Meanwhile, more carriers are collected than emitted from
either of the emitters. The continuity of charge flow is
violated and there is an electron build–up on the N1 side
60
of J2, and a hole build–up on the P2 side. When the inert HIGH UNIT
impurity charges are compensated for by injected
majority carriers, the junction J2 becomes forward
biased. The collector emits holes back to J1 and electrons 40
to J3 until a steady state continuity of charge is LOW
established. UNIT
During the regeneration process, the time it takes for a
minority carrier to travel across a base region is the transit 20
time, t, which is given approximately as:
where Wi + base width IG THRESHOLD

t1 + W2 i
2D i D i + diffusion length
(3) 0
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
t, PULSE WIDTH (ms)
(The subscript “i’’ can be either 1 or 2 to indicate the
appropriate base.) The time taken from the start of the Figure 3.3(a). Typical Variation of Minimum Gate
gate trigger to the turn–on of the device will be equal to Current Required to Trigger
some multiple of the transit time.

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 100 100
VAK = 10 V VAK = 10 V
TA = 25°C T = 25°C
50 50
HIGH UNIT
Qin, MINIMUM TRIGGER CHARGE (nc)

I G THRESHOLD

Q in , MINIMUM TRIGGER CHARGE (nc)

LOW HIGH UNIT (Q = it)
20 UNIT 20

C A B B A C
10 10

LOW
UNIT
5.0 5.0
I G THRESHOLD

C A B

2.0 2.0

1.0 1.0
2.0 5.0 10 20 50 100 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
iG, GATE CURRENT (mA) t, MINIMUM PULSE WIDTH (ms)

Figure 3.3(b). Variation of Charge versus Gate Current Figure 3.3(c). Variation of Charge versus Minimum
Pulse Width

The charge characteristic curves can be explained charge supplied through the gate is lost by recombination.
qualitatively by the variation of current amplification The charge required for turn–on increases markedly as the
(αT) with respect to emitter current. A typical variation gate current is decreased to the threshold level. Below this
of α1 and α2 for a thyristor is shown in Figure 3.4(a). threshold, the device will not turn on regardless of how
From Figure 3.4(a), it can be deduced that the total long the pulse width becomes. At this point, the slope of
current amplification factor, αT = α1 + α2, has a αT is equal to zero; all of the charge supplied is lost
characteristic curve as shown in Figure 3.4(b). (The data completely in recombination or drained out through
does not correspond to the data of Figure 3.3 — they are gate–cathode shunt resistance. A qualitative analysis of
taken for different types of devices.) variation of charge with pulse width at region A and C is
The gate current levels in region A of Figure 3.3 discussed in Appendix II.
correspond to the emitter (or anode) currents for which In region B, as the gate current level gets higher and the
the slope of the αT curve is steepest (Figure 3.4(b)). In pulse width smaller, there are two effects that contribute
region A the rate that αT builds up with respect to changes to an increasing charge requirement to trigger–on the
of IE (or IA) is high, little charge is lost by recombination, device: (1) the decreasing slope of αT and, (2) the transit
and therefore, a minimum charge is required for turn–on. time effect. As mentioned previously, it takes some
In region C of Figure 3.3, lower gate current corre- multiple of the transit time for turn–on. As the gate pulse
sponds to small IE (or IA) for which the slope of αT, as width decreases to N (tN1 + tP2) or less, (where N is a
well as αT itself, is small. It takes a large change in IE (or positive real number, tN1 = transit time of base N1, and tP2 =
IA) in order to build up αT. In this region, a lot of the transit time of base P2) the amount of current required to

u
turn–on the device should be large enough to flood the charge which corresponds to IE (or IA) high enough to
gate to cathode junction nearly instantaneously with a give αT 1.

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 1.0 1.4

N–P–N SECTION a2
1.2
0.8
B
a , CURRENT AMPLIFICATION FACTOR

a , CURRENT AMPLIFICATION FACTOR

1.0

A
0.6
0.8

0.6 C
0.4
P–N–P SECTION a1

0.4

0.2
0.2

0 0
0.1 1.0 10 100 300 0.1 1.0 10 100 300
IE, EMITTER CURRENT (mA) IE, EMITTER CURRENT (mA)

Figure 3.4(a). The Variation of α1 and α2 with Emitter Figure 3.4(b). Typical Variation of αT versus
Current for the Two Sections of Two Typical Emitter Current
Silicon Controlled Rectifiers

CAPACITANCE CHARGE TRIGGERING capacitance used as shown in Figure 3.7. Two reasons
may account for the increasing charge characteristics:
Using a gate trigger circuit as shown in Figure 3.5, the 1) An effect due to threshold current.
charge required for turn–on increases with the value of 2) An effect due to variation of gate spreading resistance.

DV1 e *t
90%
DV1
Ȁ ) RS
r G1 Ȁ ) RS)C1
(r G 1

Ȁ ) RS
r G1
DV2 *t
DV2 Ȁ ) RS e * (rȀG2 ) RS)C2
r G2

Ȁ ) RS ÉÉÉÉ
ÇÇÇÇ
ÉÉÉÉ
ÇÇÇÇ
r G2
TO Ithr

ÉÉÉÉ
ÇÇÇÇ
COMMUTATING 10% II
I
CIRCUIT
tf1
SCR tf2
PULSE WIDTH, t
C
RS
tfi = 2.2 (r′G1 + RS)C1
D V1 SHADED AREA I = |(r′G1 + RS)(C1)|(Ithr)
C1 t C2
DV1C1 + DV2C2
0 SHADED AREA II = |(r′G2 + RS)(C2)|(Ithr)

|(r′G1 + RS)(C1)|(Ithr) < |(r′G2 + RS)(C2) |(Ithr)

Figure 3.5. Gate Circuit of Capacitance Charge Figure 3.6. Gate Current Waveform in Capacitance
Triggering Charge Triggering

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 Consider the gate current waveform in Figure 3.6; the
uu
triggering pulse width is made large enough such that
τ tfl; the threshold trigger current is shown as Ithr. All
of the charge supplied at a transient current level less than
Ithr is lost by recombination, as shown in the shaded
regions.
The gate spreading resistance (r′G) of the gate junction
varies inversely with peak current; the higher the peak
current, the smaller the gate spreading resistance. Varia-
tion of gate spreading resistance measured by the method
of Time Domain Reflectometry is plotted in Figure 3.8.
From the data of Figure 3.7, it is clear that for larger
values of capacitance a lower voltage level is required
for turn–on. The peak current of the spike in Figure 3.6 is
+ Rs ∆V
given by Ipk
) r′G ; the smaller ∆V, the smaller
Ipk. Smaller Ipk in turn yields large r′G, so that r′G is
dependent on the value of capacitance used in capaci-
tance charge triggering. This reasoning is confirmed by
measuring the fall time of the gate trigger voltage and
calculating the transient gate spreading resistance, r′G,
from: R s ) r′G + 2.2tf C . Results
Figure 3.9. As expected, r′G increases with increasing
values of capacitance used. Referring back to Figure 3.6,
for the same amount of charge (C ∆V), the larger the (Rs +
r′G)C time constant of the current spike, the more charge
under the threshold level is lost in recombination.
Increasing the value of C will increase the time constant
more rapidly than if r′G were invariant. Therefore,
increasing the value of C should increase the charge lost
as shown in Figure 3.7. Note that a two order of
magnitude increase in capacitance increased the charge
by less than 3:1.
15
VAK = 10 V HIGH UNIT
Q in , MINIMUM TRIGGER CHARGE, Q(nc)
10 TA = –15°C
7.0
5.0
3.0
2.0
PULSE WIDTH = 50 ms
1.0
100 200 500 1000 2000
C, CAPACITANCE (pF)
Figure 3.7. Variation of Trigger Charge versus
Capacitance Used
3.0
NORMALIZED GATE SPREADING RESISTANCE
IA = 1 A
2.0
HIGH UNIT TA = 25°C
VAK = 10 V
1.0
0.7 LOW UNIT
0.5
0.3 Z0 = 50 W
0.2
0.1 20 50 100 200 500 1000
GATE CURRENT (mA)
Figure 3.8. Variation of Gate Spreading Resistance
versus Gate Peak Current
are plotted in EFFECT OF TEMPERATURE
The higher the temperature, the less charge required to
turn on the device, as shown in Figure 3.10. At the range
of temperatures where the SCR is operated the life time of
minority carriers increases with temperature; therefore
less charge into the gate is lost in recombination.
As analyzed in Appendix II, there are three components
of charge involved in gate triggering: (1) Qr, charge lost in
recombination, (2) Qdr, charge drained out through the
built–in gate–cathode shunt resistance, (3) Qtr, net charge
for triggering. All of them are temperature dependent.
Since the temperature coefficient of voltage across a p–n
junction is small, Qdr may be considered invariant of
temperature. At the temperature range of operation, the
temperature is too low to give rise to significant impurity
gettering, lifetime increases with temperature causing Qr
to decrease with increasing temperature. Also, Qtr
decreases with increasing temperature because at a
constant current the αT of the device in the blocking state
increases with temperature;7 in other words, to attain αT =
1 at an elevated temperature, less anode current, hence
gate current [see equation (3) of Appendix I], is needed;
LOW UNIT
therefore, Qtr decreases. The input charge, being equal to
the sum of Qtr, Qr, and Qdr, decreases with increasing
temperature.
The minimum current trigger charge decreases roughly
exponentially with temperature. Actual data taken on an
MCR729 deviate somewhat from exponential trend
(Figure 3.10). At higher temperatures, the rate of decrease
5000 10,000 is less; also for different pulse widths the rates of decrease
of Qin are different; for large pulse widths the recombina-
tion charge becomes more significant than that of small
pulse widths. As the result, it is expected and Figure 3.10
shows that Qin decreases more rapidly with temperature at
high pulse widths. These effects are analyzed in
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Appendix II [equation (7), page 242]. The theory and EFFECT OF BLOCKING VOLTAGE
experiment agree reasonably well.
An SCR is an avalanche mode device; the turn–on of
the device is due to multiplication of carriers in the
middle collector junction. The multiplication factor is
40 given by the empirical equation
+ · 1
*
M (6)
VAK = 10 V 1 ( V )n
T = 25°C VB
where
5 Multiplication factor
W r ′G , GATE SPREADING RESISTANCE ( )

30 M
V 5 Voltage across the middle “collector’’ junction
(voltage at which the device is blocking prior to
turn–on)
20
VB 5 Breakdown voltage of the middle “collector’’
(R S ) rȀG ) 2.2C
tf junction
n 5 Some positive number
10 Note as V is increased, M also increases and in turn α
increases (the current amplification factor α = γδβM
where γ 5 Emitter efficiency, β 5
5
Base transport
factor, and δ Factor of recombination).
0 The larger the V, the larger is α T. It would be expected
200 300 500 1000 2000
for the minimum gate trigger charge to decrease with
C, CAPACITANCE (pF) increasing V. Experimental results show this effect (see
Figure 3.11). For the MCR729, the gate trigger charge is
Figure 3.9. Variation of Transient Base Spreading
Resistance versus Capacitance only slightly affected by the voltage at which the device is
blocking prior to turn–on; this reflects that the exponent,
n, in equation (6) is small.
20
EFFECT OF GATE CIRCUIT
VAK = 10 V
t = GATE CURRENT PULSE WIDTH As mentioned earlier, to turn on the device, the total
(Q = it) amplification factor must be greater than unity. This
means that if some current is being drained out of the gate
which bleeds the regeneration current, turn–on will be
Q in , MINIMUM TRIGGER CHARGE (nc)

affected. The higher the gate impedance, the less the gate
trigger charge. Since the regenerative current prior to
10 turn–on is small, the gate impedance only slightly affects
9.0 m
t=1 s the required minimum trigger charge; but in the case of
8.0 t = 300 ns over–driving the gate to achieve fast switching time, the
gate circuit impedance will have noticeable effect.
7.0
t = 500 ns EFFECT OF INDUCTIVE LOAD
t = 100 ns
6.0
The presence of an inductive load tends to slow down
the change of anode current with time, thereby causing
5.0
the required charge for triggering to increase with the
value of inductance. For dc or long pulse width current
4.0 triggering, the inductive load has little effect, but its effect
–15 +25 +65 +105
increases markedly at short pulse widths, as shown in
T, TEMPERATURE (°C) Figure 3.12. The increase in charge occurs because at
short pulse widths, the trigger signal has decreased to a
Figure 3.10. Variation of Q versus Temperature
negligible value before the anode current has reached a
level sufficient to sustain turn–on.

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 10 USING NEGATIVE BIAS AND SHUNTING
9.0
8.0
7.0 Almost all SCR’s exhibit some degree of turn–off gain.
#1
6.0 At normal values of anode current, negative gate current
#2
will not have sufficient effect upon the internal feedback
Q in , MINIMUM TRIGGER CHARGE (nc)

5.0
loop of the device to cause any significant change in
#3
4.0 anode current. However, it does have a marked effect at
low anode current levels; it can be put to advantage by
3.0
using it to modify certain device parameters. Specifically,
turn–off time may be reduced and hold current may be
increased. Reduction of turn–off time and increase of hold
2.0
current are useful in such circuits as inverters or in
full–wave phase control circuits in which inductance is
TA = 25°C present.
PW = 500 ns Negative gate current may, of course, be produced by
0.05 mF CAP. DISCHARGE use of an external bias supply. It may also be produced by
1.0
taking advantage of the fact that during conduction the
10 20 30 50 100 200 500 1000 gate is positive with respect to the cathode and providing
VAK, ANODE VOLTAGE (V) an external conduction path such as a gate–to–cathode
resistor. All ON Semiconductor SCR’s, with the exception
Figure 3.11. Variation of Current Trigger Charge
of sensitive gate devices, are constructed with a built in
versus Blocking Voltage Prior to Turn–On
gate–to–cathode shunt, which produces the same effect as
negative gate current. Further change in characteristics
can be produced by use of an external shunt. Shunting
80
does not produce as much of a change in characteristics as
does negative bias, since the negative gate current, even
with an external short circuit, is limited by the lateral
resistance of the base layer. When using external negative
Q in , MINIMUM TRIGGER CHARGE (nc)

60 bias the current must be limited, and care must be taken to

L = 100 mH avoid driving the gate into the avalanche region.
The effects of negative gate current are not shown on
the device specification sheets. The curves in Figure 3.13
40 represent measurements made on a number of SCRs, and
should therefore not be considered as spec limits. They
L = 10 mH
do, however, show definite trends. For example, all of the
L = 0 mH
SCRs showed an improvement in turn–off time of about
20 one–third by using negative bias up to the point where no
further significant improvement was obtained. The
TA = 25°C increase in hold current by use of an external shunt
VAK = 10 V resistor ranged typically between 5 and 75 percent,
0
whereas with negative bias, the range of improvement ran
30 50 70 100 200 300 500 700 1000 typically between 2–1/2 and 7 times the open gate value.
t, MINIMUM PULSE WIDTH (ns) Note that the holding current curves are normalized and are
referred to the open gate value.
Figure 3.12. Effect of Inductance Load on
Triggering Charge

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 SPREAD OF 5 DEVICES REDUCING di/dt — EFFECT FAILURES
1.6
Figure 3.14 shows a typical SCR structural cross section
(not to scale). Note that the collector of transistor 1 and
NORMALIZED HOLDING CURRENT

the base of transistor 2 are one and the same layer. This is
1.4 also true for the collector of transistor 2 and the base of
transistor 1. Although for optimum performance as an
SCR the base thicknesses are great compared to a normal
1.2 transistor, nevertheless, base thickness is still small
compared to the lateral dimensions. When applying
positive bias to the gate, the transverse base resistance,
spreading resistance or rb′ will cause a lateral voltage drop
1.0
which will tend to forward bias those parts of the
transistor 1 emitter–junction closest to the base contact
1.0 10 100 1000 5000 (gate) more heavily, or sooner than the portions more
GATE–TO–CATHODE RESISTANCE (OHMS) remote from the contact area. Regenerative action,
Figure 3.13(a). Normalized Holding Current consequently will start in an area near the gate contact,
versus Gate–to–Cathode Resistance and the SCR will turn on first in this area. Once on,
conduction will propagate across the entire junction.
SPREAD OF 5 DEVICES
6.0 T2 T1
LAYER
CATHODE
NO. 4 (E) GATE
NORMALIZED HOLDING CURRENT

NO. 3 (C) (B)

4.0 NO. 2
NO. 1
(B)
(E)
(C)
ÉÉÉÉÉÉ N
P
N
2.0

ÉÉÉÉÉÉÉÉÉ
P

ÉÉÉÉÉÉÉÉÉ
ANODE

0 Figure 3.14. Construction of Typical SCR

0 –2.0 –4.0 –6.0 –8.0 –10
GATE–TO–CATHODE VOLTAGE (VOLTS)
The phenomenon of di/dt failure is related to the
Figure 3.13(b). Normalized Holding Current turn–on mechanism. Let us look at some of the external
versus Gate–to–Cathode Voltage factors involved and see how they contribute. Curve
3.15(a) shows the fall of anode–to–cathode voltage with
AVERAGE 10 DEVICES
time. This fall follows a delay time after the application of
6.0
the gate bias. The delay time and fall time together are
called turn–on time, and, depending upon the device, will
IF = 10 A
TURN–OFF TIME ( m s)

take anywhere from tens of nanoseconds up to a few

microseconds. The propagation of conduction across the
4.0
entire junction requires a considerably longer time. The
IF = 5 A time required for propagation or equalization of conduc-
tion is represented approximately by the time required for
the anode–to–cathode voltage to fall from the 10 percent
2.0
point to its steady state value for the particular value of
anode current under consideration (neglecting the change
due to temperature effects). It is during the interval of
0
time between the start of the fall of anode–to–cathode
0 –5.0 –10 voltage and the final equalization of conduction that the
GATE–TO–CATHODE VOLTAGE (VOLTS) SCR is most susceptible to damage from excessive
current.
Figure 3.13(c). Turn–Off Time versus Bias

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 Let us superimpose a current curve (b) on the anode–to–
cathode voltage versus time curve to better understand
this. If we allow the current to rise rapidly to a high value
we find by multiplying current and voltage that the
instantaneous dissipation curve (c) reaches a peak which
may be hundreds of times the steady state dissipation
level for the same value of current.
At the same time it is important to remember that the
dissipation does not take place in the entire junction, but
is confined at this time to a small volume. Since
temperature is related to energy per unit volume, and
since the energy put into the device at high current levels
may be very large while the volume in which it is
concentrated is very small, very high spot temperatures
may be achieved. Under such conditions, it is not difficult
to attain temperatures which are sufficient to cause
localized melting of the device.
Even if the peak energy levels are not high enough to be
destructive on a single–shot basis, it must be realized that
since the power dissipation is confined to a small area, the
power handling capabilities of the device are lessened.
For pulse service where a significant percentage of the
power per pulse is dissipated during the fall–time interval,
it is not acceptable to extrapolate the steady state power
dissipation capability on a duty cycle basis to obtain the
allowable peak pulse power.
ANODE TO CATHODE
VOLTAGE (a)
100
PERCENT OF MAXIMUM (%)
INSTANTANEOUS
POWER
DISSIPATION (c)
50
0 250
0.1 1.0
TIME (ms)
Figure 3.15. Typical Conditions — Fast–Rise, High
Current Pulse
The final criterion for the limit of operation is junction
temperature. For reliable operation the instantaneous
junction temperature must always be kept below the
maximum junction temperature as stated on the manufac-
turer’s data sheet. Some SCR data sheets at present
include information on how to determine the thermal
response of the junction to current pulses. This informa-
tion is not useful, however, for determining the limitations
of the device before the entire junction is in conduction,
because they are based on measurements made with the
entire junction in conduction.
At present, there is no known technique for making a
reasonably accurate measurement of junction temperature
in the time domain of interest. Even if one were to devise
a method for switching a sufficiently large current in a
short enough time, one would still be faced with the
problem of charge storage effects in the device under test
masking the thermal effects. Because of these and other
problems, it becomes necessary to determine the device
limitations during the turn–on interval by destructive
testing. The resultant information may be published in a
form such as a maximum allowable current versus time,
or simply as a maximum allowable rate of rise of anode
current (di/dt).
Understanding the di/dt failure mechanism is part of the
problem. To the user, however, a possible cure is infinitely
more important. There are three approaches that should be
considered.
Because of the lateral base resistance the portion of the
gate closest to the gate contact is the first to be turned on
because it is the first to be forward biased. If the minimum
gate bias to cause turn–on of the device is used, the spot in
which conduction is initiated will be smallest in size. By
increasing the magnitude of the gate trigger pulse to
ANODE several times the minimum required, and applying it with
CURRENT (b) a very fast rise time, one may considerably increase the
size of the spot in which conduction starts. Figure 3.16(a)
illustrates the effect of gate drive on voltage fall time and
Figure 3.16(b) shows the improvement in instantaneous
dissipation. We may conclude from this that overdriving
the gate will improve the di/dt capabilities of the device,
and we may reduce the stress on the device by doing so.
350
ANODE TO CATHODE VOLTAGE (VOLTS)
300
PEAK ANODE CURRENT = 500 A
200
IGT = 2 A
150
IGT = 17 mA
100
50
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
t, TIME (ms)
Figure 3.16(a). Effect of Gate Drive on Fall Time
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 A very straightforward approach is to simply slow down WHY AND HOW TO SNUB THYRISTORS
the rate of rise of anode current to insure that it stays
Inductive loads (motors, solenoids, etc.) present a problem
within the device ratings. This may be done simply by
for the power triac because the current is not in phase with
adding some series inductance to the circuit. the voltage. An important fact to remember is that since a
triac can conduct current in both directions, it has only a
brief interval during which the sine wave current is passing
70 through zero to recover and revert to its blocking state. For
INSTANTANEOUS POWER DISSIPATION (kW)

inductive loads, the phase shift between voltage and current

60 means that at the time the current of the power handling
PEAK ANODE CURRENT = 500 A
triac falls below the holding current and the triac ceases to
50
IGT = 2 A conduct, there exists a certain voltage which must appear
40 across the triac. If this voltage appears too rapidly, the triac
IGT = 17 mA will resume conduction and control is lost. In order to
30 achieve control with certain inductive loads, the rate of rise
in voltage (dv/dt) must be limited by a series RC network
20 placed in parallel with the power triac as shown in
Figure 3.18. The capacitor CS will limit the dv/dt across the
10
triac.
0 The resistor RS is necessary to limit the surge current
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 from CS when the triac conducts and to damp the ringing
t, TIME (ms) of the capacitance with the load inductance LL. Such an
RC network is commonly referred to as a “snubber.’’
Figure 3.16(b). Effect of Gate Drive On Figure 3.19 shows current and voltage waveforms for
Turn–On Dissipation the power triac. Commutating dv/dt for a resistive load is
typically only 0.13 V/µs for a 240 V, 50 Hz line source
and 0.063 V/µs for a 120 V, 60 Hz line source. For
inductive loads the “turn–off’’ time and commutating dv/dt
If the application should require a rate of current rise stress are more difficult to define and are affected by a
beyond the rated di/dt limit of the device, then another number of variables such as back EMF of motors and the
approach may be taken. The device may be turned on to a ratio of inductance to resistance (power factor). Although
relatively low current level for a sufficient time for a large it may appear from the inductive load that the rate or rise
part of the junction to go into conduction; then the current is extremely fast, closer circuit evaluation reveals that the
level may be allowed to rise much more rapidly to very commutating dv/dt generated is restricted to some finite
high levels. This might be accomplished by using a delay value which is a function of the load reactance LL and the
reactor as shown in Figure 3.17. Such a reactor would be device capacitance C but still may exceed the triac’s
wound on a square loop core so that it would have sharp critical commutating dv/dt rating which is about 50 V/µs.
saturation characteristic and allow a rapid current rise. It It is generally good practice to use an RC snubber network
is also possible to make use of a separate saturation across the triac to limit the rate of rise (dv/dt) to a value
winding. Under these conditions, if the delay is long below the maximum allowable rating. This snubber
enough for the entire junction to go into conduction, the network not only limits the voltage rise during commuta-
power handling capabilities of the device may be tion but also suppresses transient voltages that may occur
extrapolated on a duty cycle basis. as a result of ac line disturbances.
There are no easy methods for selecting the values for RS
and CS of a snubber network. The circuit of Figure 3.18 is a
damped, tuned circuit comprised of RS, CS, RL and LL, and
to a minor extent the junction capacitance of the triac. When
+ RL the triac ceases to conduct (this occurs every half cycle of
DELAY
the line voltage when the current falls below the holding
–
REACTOR current), the triac receives a step impulse of line voltage
which depends on the power factor of the load. A given load
SCR fixes RL and LL; however, the circuit designer can vary RS
and CS. Commutating dV/dt can be lowered by increasing
CS while RS can be increased to decrease resonant “over
Figure 3.17. Typical Circuit Use of a Delay Reactor
ringing’’ of the tuned circuit.

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1 6 R BASIC CIRCUIT ANALYSIS

2 5 RS Figure 3.20 shows an equivalent circuit used for

AC analysis, in which the triac has been replaced by an ideal
ZERO CS
3 CROSSING 4 switch. When the triac is in the blocking or non–conduct-
CIRCUIT ing state, represented by the open switch, the circuit is a
LL RL
standard RLC series network driven by an ac voltage
LOAD source. The following differential equation can be
Figure 3.18. Triac Driving Circuit — with Snubber obtained by summing the voltage drops around the circuit;

IF(ON)
IF(OFF) (R L ) RS) i(t) ) L di(t)
dt
) q c(t)
CS
+ VMsin(wt ) f) (2)

AC LINE in which i(t) is the instantaneous current after the switch

VOLTAGE opens, qc(t) is the instantaneous charge on the capacitor, VM
is the peak line voltage, and φ is the phase angle by which
the voltage leads the current prior to opening of the
AC CURRENT switch. After differentiation and rearrangement, the equa-
tion becomes a standard second–order differential equation
COMMUTATING with constant coefficients.
dv/dt
With the imposition of the boundary conditions that
VOLTAGE
ACROSS i(o) = 0 and qc(o) = 0 and with selected values for RL, L,
t0 POWER TRIAC RS and CS, the equation can be solved, generally by the
TIME use of a computer. Having determined the magnitude
RESISTIVE LOAD and time of occurrence of the peak voltage across the
thyristor, it is then possible to calculate the values and
times of the voltages at 10% and 63% of the peak value.
IF(ON) This is necessary in order to compute the dv/dt stress as
IF(OFF)
defined by the following equation:

AC LINE
VOLTAGE
dv
dt
+ Vt22 ** tV11
0 where V1 and t1 are the voltage and time at the 10% point
AC CURRENT and V2 and t2 are the voltage and time at the 63% point.
THROUGH Solution of the differential equation for assumed load
POWER TRIAC
COMMUTATING conditions will give the circuit designer a starting point
d dv/dt for selecting RS and CS.
VOLTAGE Because the design of a snubber is contingent on the
ACROSS
t0 POWER TRIAC load, it is almost impossible to simulate and test every
possible combination under actual operating conditions. It
TIME
is advisable to measure the peak amplitude and rate of rise
INDUCTIVE LOAD of voltage across the triac by use of an oscilloscope, then
make the final selection of RS and CS experimentally.
Figure 3.19. Current and Voltage Waveforms Additional comments about circuit values for SCRs and
During Commutation Triacs are made in Chapter 6.

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L RL
RS
LOAD
AC
POWER CS
SOURCE
Figure 3.20. Equivalent Circuit used for Analysis
USING SENSITIVE GATE SCRs
In applications of sensitive gate SCRs such as the ON
Semiconductor 2N6237, the gate–cathode resistor, RGK
(Figure 3.21) is an important factor. Its value affects, in
varying degrees, such parameters as IGT, VDRM, dv/dt, IH,
leakage current, and noise immunity.
ANODE (A)
GATE (G)
RGK
CATHODE (K)
Figure 3.21. Gate–Cathode Resistor, RGK
SCR CONSTRUCTION
The initial step in making an SCR is the creation, by
diffusion, of P–type layers is N–type silicon base
material. Prior to the advent of the all–diffused SCR, the
next step was to form the gate–cathode P–N junction by
alloying in a gold–antimony foil. This produced a silicon
P–N junction of the regrown type over most of the junction
area. However, a resistive rather than semiconductor
junction would form where the molten alloy terminated at
the surface. This formed an internal RGK, looking in at the
gate–cathode terminals, that reduced the “sensitivity’’ of the
SCR.
Modern practice is to produce the gate–cathode junction
by masking and diffusing, a much more controllable
process. It produces a very clean junction over the entire
junction area with no unwanted resistive paths. Good
dv/dt performance by larger SCRs, however, requires
resistive paths distributed over the junction area. These
are diffused in as emitter shorts and naturally desensitize
the device. Smaller SCRs may rely on an external RGK
because the lateral resistance in the gate layer is small
enough to prevent leakage and dV/dt induced currents
from forward biasing the cathode and triggering the SCR.
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Figure 3.22(a) shows the construction of a sensitive
gate SCR and the path taken by leakage current flowing
out through RGK. Large SCRs (Figure 3.22(b)) keep the
path length small by bringing the gate layer up to contact
the cathode metal. This allows the current to siphon out
all–round the cathode area.
When the chip dimensions are small there is little
penalty in placing the resistor outside the package. This
gives the circuit designer considerable freedom in tailor-
ing the electrical properties of the SCR. This is a great
advantage when low trigger or holding current is needed.
Still, there are trade–offs in the maximum allowable
junction temperature and dV/dt immunity that go with
larger resistor values. Verifying that the design is adequate
to prevent circuit upset by heat or noise is important. The
rated value for RGK is usually 1 K Ohm. Lower values
improve blocking and turn–off capability.
K DIFFUSED EMITTER
K CATHODE G K SHORTS G
G
METAL
N N N N
+ P– DIFFUSED P
ÉÉÉÉÉÉ ÉÉÉÉÉÉ
N BASE N
P DIFFUSED P
ÉÉÉÉÉÉ ÉÉÉÉÉÉ
A A A
CASE CASE
(a). SIMPLE (b). SHORTED EMITTER
CONSTRUCTION CONSTRUCTION
Figure 3.22. Sensitive Gate SCR Construction
The sensitive gate SCR, therefore, is an all–diffused
design with no emitter shorts. It has a very high
impedance path in parallel with the gate–cathode P–N
diode; the better the process is the higher this impedance,
until a very good device cannot block voltage in the
forward direction without an external RGK. This is so,
because thermally generated leakage currents flowing
from the anode into the gate junction are sufficient to
turn on the SCR. The value for RGK is usually one
kilohm and its presence and value affects many other
parameters.
FORWARD BLOCKING VOLTAGE AND
CURRENT, VDRM AND IDRM
The 2N6237 family is specified to have an IDRM, or
anode–to–cathode leakage current, of less than 200 µA at
maximum operating junction temperature and rated
VDRM. This leakage current increases if RGK is omitted
and, in fact, the device may well be able to regenerate and
turn on. Tests were run on several 2N6239 devices to
establish the dependency of the leakage current on RGK
and to determine its relationship with junction tempera-
ture, TJ, and forward voltage VAK (Figure 3.23a).
 Figure 3.23(a) is a plot of VAK, forward voltage, versus 110
RGK taken at the maximum rated operating junction
temperature of 110°C. With each device the leakage 2N6239
100
current, IAK, is set for a VAK of 200 V, then VAK reduced VAK = VDRM = 200 V
IAK CONSTANT
and RGK varied to re–establish the same leakage current.
The plot shows that the leakage current is not strongly 90

TJ ( °C)
voltage dependent or, conversely, RGK may not be
increased for derate. 80
While the leakage current is not voltage dependent, it is
very temperature dependent. The plot in Figure 3.23(b) of
70
TJ, junction temperature, versus RGK taken at VDRM, the
maximum forward blocking voltage shows this dependence.
For each device (2N6329 again) the leakage current, IAK, 60
1K 5K 10 K 50 K 100 K
was measured at the maximum operating junction tempera-
ture of 110°C, then the junction temperature was reduced RGK (OHMS)
and RGK varied to re–establish that same leakage current. Figure 3.23(b). TJ versus RGK (Typical) for Constant
The plot shows that the leakage current is strongly depen- Leakage Current
dent on junction temperature. Conversely RGK may be
increased for derated temperature.
A conservative rule of thumb is that leakage doubles
every 10°C. If all the current flows out through RGK, dv/dt
triggering will not occur until the voltage across RGK
reaches VGT. This implies an allowed doubling of the
resistor for every 10° reduction in maximum junction CAG
temperature. However, this rule should be applied with i
caution. Static dV/dt may require a smaller resistor than
expected. Also the leakage current does not always follow RGK
the 10° rule below 70°C because of surface effects.
To summarize, the leakage current in a sensitive gate
SCR is much more temperature sensitive than voltage Figure 3.23(c). dv/dt Firing of an SCR
sensitive. Operation at lower junction temperatures allows
an increase in the gate–cathode resistor which makes the
SCR–resistor combination more “sensitive.’’ 1,000V/
s m
dv/dt, RATE OF RISE OF ANODE VOLTAGE (V/ s)

MCR706–6
m

200 TJ = 110°C
400 V PEAK
2N6239 100V/
180
TJ = 110°C sm EXPONENTIAL
IAK CONSTANT METHOD
VAK (VOLTS)

160
IGT = 27 A m
10V/
140 sm IGT = 5.6 Am

120 1V/
m
s 10 100 1,000 10,000 100,000
100 W
RGK ( )
0 1K 2K 3K
Figure 3.23(d). Static dv/dt as a function of
RGK (OHMS)
Gate–Cathode Resistance on two devices
Figure 3.23(a). VAK versus RGK (Typical) for Constant with different sensitivity.
Leakage Current

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RATE–OF–RISE OF ANODE VOLTAGE, dv/dt
An SCR’s junctions exhibit capacitance due to the
separation of charge when the device is in a blocking
state. If an SCR is subjected to forward dv/dt, this
capacitance can couple sufficient current into the SCR’s
gate to turn it on, as shown in Figure 3.23(c). RGK acts as
a diversionary path for the dv/dt current. (In larger SCRs,
where the lateral gate resistance of the device limits the
influence of RGK, this path is provided by the resistive
emitter shorts mentioned previously.) The gate–cathode
resistor, then, might be expected to have some effect on
the dv/dt performance of the SCR. Figure 3.23(d)
confirms this behavior. The static dV/dt for two MCR706
devices varies over several powers of ten with changes in
the gate–cathode resistance. Selection of the external
resistor allows the designer to trade dynamic performance
with the amount of drive current provided to the
resistor–SCR combination. The sensitive–gate device
with low RGK provides performance approaching that of
an equivalent non–sensitive SCR. This strong dependence
does not exist with conventional shorted emitter SCRs
because of their internal resistor. The conventional SCR
cannot be made more sensitive, but the sensitive–gate
device attributes can be reliably set with the resistor to
any desired point along the sensitivity range. Low values
of resistance make the dV/dt performance more uniform
and predictable. The curves for two devices with different
sensitivity diverge at high values of resistance because the
device response becomes more dependent on its sensitiv-
ity. The resistor is the most important factor determining
the static dV/dt capability of the product. Reverse biasing
the gate also improves dV/dt. A 2N6241 improved by a
factor of 50 with a 1 volt bias.
GATE CURRENT, IGT
The total gate current that a gating circuit must supply
is the sum of the current that the device itself requires to
fire and the current flowing to circuit ground through
GATE CURRENT, IGT(min)
SCR manufacturers sometimes get requests for a
sensitive–gate SCR specified with an IGT(min), that is, the
maximum gate current that will not fire the device. This
requirement conflicts with the basic function of a
sensitive gate SCR, which is to fire at zero or very low
gate current, IGT(max). Production of devices with a
measurable IGT(min) is at best difficult and deliveries can
be sporadic!
One reason for an IGT(min) requirement might be some
measurable off–state gating circuit leakage current,
perhaps the collector leakage of a driving transistor. Such
current can readily be bypassed by a suitably chosen RGK.
The VGT of the SCR at the temperature in question can be
estimated from Figure 3.25, an Ohm’s Law calculation
made, and the resistor installed to define this “won’t fire’’
current. This is a repeatable design well in the control of
the equipment designer.
GATE TRIGGER VOLTAGE, VGT
The gate–cathode junction is a p–n silicon junction. So
the gate trigger voltage follows the diode law and has
roughly the same temperature coefficient as a silicon
diode, –2mV/C. Figure 3.25 is a plot of VGT versus
temperature for typical sensitive gate SCRs. They are
prone to triggering by noise coupled through the gate
circuit because of their low trigger voltage. The smallest
noise voltage margin occurs at maximum temperature and
with the most sensitive devices.
0.9
V GT , GATE TRIGGER VOLTAGE (VOLTS)

0.8
RGK, as shown in Figure 3.24. IGT, the current required by HIGH UNIT
the device so that it may fire, is usually specified by the 0.7
device manufacturer as a maximum at some temperature IGT = 200 mA @ 300°K
0.6
(for the 2N6236 series it is 500 µA maximum at –40°C).
The current flowing through RGK is defined by the 0.5
resistor value and by the gate–to–cathode voltage that the LOW UNIT
0.4
SCR needs to fire. This is 1 V maximum at –40°C for the IGT = 20 NA @ 300°K
2N6237 series, for example. 0.3

0.2
ITOT IGT
0.1
–30 –10 10 30 50 70 90 110 130
VGT RGK IR
JUNCTION TEMPERATURE (°C)
Figure 3.25. Typical VGT vs TJ

Figure 3.24. SCR and RGK “Gate’’ Currents

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HOLDING CURRENT, IH 1,000 Ohm resistor, between 100 µA to 1 mA of noise
current is necessary to generate enough voltage to fire the
The holding current of an SCR is the minimum anode
device. Adding a capacitor sized between 0.01 and 0.1 µF
current required to maintain the device in the on state. It is
creates a noise filter and improves dV/dt by shunting
usually specified as a maximum for a series of devices
dV/dt displacement current out through the gate terminal.
(for instance, 5 mA maximum at 25°C for the 2N6237
These components must be placed as close as possible to
series). A particular device will turn off somewhere
the gate and cathode terminals to prevent lead inductance
between this maximum and zero anode current and there
from making them ineffective. The use of the capacitor
is perhaps a 20–to–1 spread in each lot of devices.
also requires the gate drive circuit to supply enough
Figure 3.26 shows the holding current increasing with
current to fire the SCR without excessive time delay. This
decreasing RGK as the resistor siphons off more and more
u
is particularly important in applications with rapidly
of the regeneratively produced gate current when the
rising (di/dt 50 A/µs) anode current where a fast rise
device is in the latched condition.
high amplitude gate pulse helps to prevent di/dt damage
Note that the gate–cathode resistor determines the
to the SCR.
holding current when it is less than 100 Ohms. SCR
Reverse gate voltage can cause unwanted turn–off of
sensitivity is the determining factor when the resistor
the SCR. Then the SCR works like a gate turn–off
exceeds 1 meg Ohm. This allows the designer to set the
thyristor. Turn–off by the gate signal is more probable
holding current over a wide range of possible values using
with small SCRs because of the short distance between
the resistor. Values typical of those in conventional
the cathode and gate regions. Whether turn–off occurs or
non–sensitive devices occur when the external resistor is
not depends on many variables. Even if turn–off does not
similar to their internal gate–cathode shorting resistance.
occur, the effect of high reverse gate current is to move
The holding current uniformity also improves when the
the conduction away from the gate, reducing the effective
resistor is small.
cathode area and surge capability. Suppressing the reverse
10
gate voltage is particularly important when the gate pulse
duration is less than 1 microsecond. Then the part triggers by
TJ = 25°C
charge instead of current so halving of the gate pulse width
I H , HOLDING CURRENT, mA

requires double the gate current. Capacitance coupled

gate drive circuits differentiate the gate pulse
1.0
(Figure 3.27) leading to a reverse gate spike. The reverse
m
IGT = 1.62 A
gate voltage rating should not be exceeded to prevent
avalanche damage.
This discussion has shown that the use of RGK, the
0.1
gate–cathode resistor, has many implications. Clear
understanding of its need and its influence on the
IGT = 20 NA performance of the sensitive gate SCR will enable the
0.01 designer to have better control of his circuit designs using
0.1 1.0 10 100 1,000 this versatile part.
RGK, GATE–CATHODE RESISTANCE, K W
Figure 3.26. 2N5064 Holding Current

NOISE IMMUNITY
Changes in electromagnetic and electrostatic fields
coupled into wires or printed circuit lines can trigger these
sensitive devices, as can logic circuit glitches. The result
is more serious than with a transistor since an SCR will OPTIONAL
latch on. Careful wire harness design (twisted pairs and REVERSE
adequate separation from high–power wiring) and printed GATE
SUPPRESSOR
circuit layout (gate and return runs adjacent to one
DIODE
another) can minimize potential problems. A gate cathode
network consisting of a resistor and parallel capacitor also
helps. The resistor provides a static short and is helpful
Figure 3.27. Capacitance Coupled Gate Drive
with noise signals of any frequency. For example, with a

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DRIVERS: PROGRAMMABLE UNIJUNCTION
TRANSISTORS
The programmable unijunction transistor (PUT) is a
four layer device similar to an SCR. However, gating is
with respect to the anode instead of the cathode. An
external resistive voltage divider accurately sets the
triggering voltage and allows its adjustment. The PUT
finds limited application as a phase control element and is
most often used in long duration or low battery drain timer
circuits where its high sensitivity permits the use of large
timing resistors and small capacitors. Like an SCR, the
PUT is a conductivity modulated device capable of
providing high current output pulses.
OPERATION OF THE PUT
The PUT has three terminals, an anode (A), gate (G),
and cathode (K). The symbol and a transistor equivalent
circuit are shown in Figure 3.28. As can be seen from the
equivalent circuit, the device is actually an anode–gated
SCR. This means that if the gate is made negative with
respect to the anode, the device will switch from a
blocking state to its on state.
A and RG. For example, decreasing RG will cause peak and
ANODE
(A)
G decrease.
GATE
(G)
(K)
CATHODE K junction transistors. The test circuits and test conditions
Figure 3.28(a). Figure 3.28(b).
PUT Symbol Transistor Equivalent
The PUT is a complementary SCR when its anode is
connected like an SCR’s cathode and the circuit bias
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voltages are reversed. Negative resistance terminology
describes the device characteristics because of the
traditional application circuit. An external reference
voltage must be maintained at the gate terminal. A typical
relaxation type oscillator circuit is shown in
Figure 3.29(a). The voltage divider shown is a typical
way of obtaining the gate reference. In this circuit, the
characteristic curve looking into the anode–cathode
terminals would appear as shown in Figure 3.29(b). The
peak and valley points are stable operating points at either
end of a negative resistance region. The peak point
voltage (VP) is essentially the same as the external gate
reference, the only difference being the gate diode drop.
Since the reference is circuit and not device dependent, it
may be varied, and in this way, VP is programmable.
In characterizing the PUT, it is convenient to speak of
the Thevenin equivalent circuit for the external gate
voltage (VS) and the equivalent gate resistance (RG). The
parameters are defined in terms of the divider resistors
(R1 and R2) and supply voltage as follows:
VS + R1 V1ń(R1 ) R2)
RG + R1 R2ń(R1 ) R2)
Most device parameters are sensitive to changes in VS
valley currents to increase. This is easy to see since RG
actually shunts the device and will cause its sensitivity to
CHARACTERISTICS OF THE PUT
Table 3.1 is a list of typical characteristics of ON
Semiconductor’s 2N6027/2N6028 of programmable uni-
shown are essentially the same as for the data sheet
characteristics. The data presented here defines the static
curve shown in Figure 3.29(b) for a 10 V gate reference (VS)
with various gate resistances (RG). It also indicates the
leakage currents of these devices and describes the output
pulse. Values given are for 25°C unless otherwise noted.
 VP PEAK POINT
VS
NEGATIVE RESISTANCE REGION

VAK
VALLEY POINT
RT R2
VF
+
V1 VV
–
OUTPUT VS R1
CT R0 IGAO
IP IV IF
IA

Figure 3.29(a). Typical Oscillator Circuit Figure 3.29(b). Static Characteristics

Table 3.1. Typical PUT Characteristics

Symbol Test Circuit Figure Test Conditions 2N6027 2N6028 Unit

IP 3.30 RG = 1 mΩ 1.25 0.08 µA
RG = 10 kΩ 4 0.70 µA
IV 3.30 RG = 1 MΩ 18 18 µA
RG = 10 kΩ 150 150 µA
VAG (See Figure 3.31)
IGAO VS = 40 V (See Figure 3.32)
IGKS VS = 40 V 5 5 nA
VF Curve Tracer Used IF = 50 mA 0.8 0.8 V
VO 3.33 11 11 V
tr 3.34 40 40 ns

PEAK POINT CURRENT, (IP)
The peak point is indicated graphically by the static
curve. Reverse anode current flows with anode voltages
less than the gate voltage (VS) because of leakage from
the bias network to the charging network. With currents
less than IP, the device is in a blocking state. With currents
above IP, the device goes through a negative resistance
region to its on state.
The charging current, or the current through a timing
resistor, must be greater than IP at VP to insure that a
device will switch from a blocking to an on state in an
oscillator circuit. For this reason, maximum values of IP
are given on the data sheet. These values are dependent
on VS temperature, and RG. Typical curves on the data
sheet indicate this dependence and must be consulted
for most applications.
The test circuit in Figure 3.30 is a sawtooth oscillator
which uses a 0.01 µF timing capacitor, a 20 V supply, an
adjustable charging current, and equal biasing resistors
(R). The two biasing resistors were chosen to given an
equivalent RG of 1 MΩ and 10 kΩ. The peak point
current was measured with the device off just prior to
oscillation as detected by the absence of an output
voltage pulse. The 2N5270 held effect transistor circuit
is used as a current source. A variable gate voltage
supply was used to control this current.
VALLEY POINT CURRENT, (IV)
The valley point is indicated graphically in
Figure 3.28. With currents slightly less than IV, the
device is in an unstable negative resistance state. A
voltage minimum occurs at IV and with higher currents,
the device is in a stable on state.
When the device is used as an oscillator, the charging
current or the current through a timing resistor must be
less than IV at the valley point voltage (VV). For this
reason, minimum values for IV are given on the data sheet
for RG = 10 kΩ. With RG = 1 MΩ, a reasonable “low’’ is 2
µA for all devices.
When the device is used in the latching mode, the anode
current must be greater than IV. Maximum values for IV
are given with RG = 1 MΩ. All devices have a reasonable
“high’’ of 400 µA IV with RG = 10 kΩ.

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PEAK POINT VOLTAGE, (VP)
The unique feature of the PUT is that the peak point
voltage can be determined externally. This programmable
feature gives this device the ability to function in voltage
controlled oscillators or similar applications. The trigger-
ing or peak point voltage is approximated by
VP ≈ VT ) V S,
where VS is the unloaded divider voltage and VT is the
offset voltage. The actual offset voltage will always be
higher than the anode–gate voltage VAG, because IP flows
out of the gate just prior to triggering. This makes VT =
VAG + IP RG. A change in RG will affect both VAG and IP
RG but in opposite ways. First, as RG increases, IP
decreases and causes VAG to decrease. Second, since IP
does not decrease as fast as RG increases, the IP RG
product will increase and the actual VT will increase.
These second order effects are difficult to predict and
measure. Allowing VT to be 0.5 V as a first order
approximation gives sufficiently accurate results for most
applications.
The peak point voltage was tested using the circuit in
Figure 3.30 and a scope with 10 MΩ input impedance
IP, IV
RS
G S
– +
VG
+ R
20 V
–
R 20
Figure 3.30. Test Circuit for IP, VP and IV
GATE–ANODE LEAKAGE CURRENT, (IGAO)
The gate–to–anode leakage current is the current that
flows from the gate to the anode with the cathode open.
It is important in long duration timers since it adds to
the charging current flowing into the timing capacitor.
The typical leakage currents measured at 40 V are
shown in Figure 3.32. Leakage at 25°C is approxi-
mately 1 nA and the current appears to double for about
every 10°C rise in temperature.
across the PUT. A Tektronix, Type W plug–in was used to
determine this parameter.
FORWARD ANODE–GATE VOLTAGE, (VAG)
The forward anode–to–gate voltage drop affects the
peak point voltage as was previously discussed. The drop
is essentially the same as a small signal silicon diode and
is plotted in Figure 3.31. The voltage decreases as current
decreases, and the change in voltage with temperature is
greater at low currents. At 10 nA the temperature
coefficient is about –2.4 V/°C and it drops to about –1.6
mV/°C at 10 mA. This information is useful in
applications where it is desirable to temperature compen-
sate the effect of this diode.
GATE–CATHODE LEAKAGE CURRENT, (IGKS)
The gate–to–cathode leakage current is the current that
flows from the gate to the cathode with the anode shorted
to the cathode. It is actually the sum of the open circuit
gate–anode and gate–cathode leakage currents. The shorted
leakage represents current that is shunted away from the
voltage divider.
NOTES: 1) VARIOUS SENSE RESISTORS (RS) ARE USED TO
KEEP THE SENSE VOLTAGE NEAR 1 Vdc.
2) THE GATE SUPPLY (VG) IS ADJUSTED FROM
2N5270 ABOUT –0.5 V TO +20 V.
D
Vp
0.01 mF
PUT OUTPUT PULSE
UNDER
TEST
R = 2 RG
VS = 10 V
FORWARD VOLTAGE, (VF)
The forward voltage (VF) is the voltage drop between
the anode and cathode when the device is biased on. It is
the sum of an offset voltage and the drop across some
internal dynamic impedance which both tend to reduce
the output pulse. The typical data sheet curve shows this
impedance to be less than 1 ohm for up to 2 A of forward
current.
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PEAK OUTPUT VOLTAGE, (VO) 0.9

The peak output voltage is not only a function of VP, VF 0.7

and dynamic impedance, but is also affected by switching
speed. This is particularly true when small capacitors (less

VAG (VOLTS)
than 0.01 µF) are used for timing since they lose part of 0.5
25°C
their charge during the turn on interval. The use of a
relatively large capacitor (0.2 µF) in the test circuit of 0.3
75°C
Figure 3.33 tends to minimize this last effect. The output
voltage is measured by placing a scope across the 20 ohm
0.1
resistor which is in series with the cathode lead.

0
RISE TIME, (tr) 0.01 0.1 1.0 10 100 1K 10 K
IAG (mA)
Rise time is a useful parameter in pulse circuits that use Figure 3.31. Voltage Drop of 2N6027 Series
capacitive coupling. It can be used to predict the amount
of current that will flow between these circuits. Rise time 70
is specified using a fast scope and measuring between
0.6 V and 6 V on the leading edge of the output pulse.
60

TEMPERATURE ( °C)
MINIMUM AND MAXIMUM FREQUENCY 50

In actual tests with devices whose parameters are

40
known, it is possible to establish minimum and maximum
values of timing resistors that will guarantee oscillation.
The circuit under discussion is a conventional RC 30
relaxation type oscillator.
To obtain maximum frequency, it is desirable to use low 20
values of capacitance (1000 pF) and to select devices and 1.0 10
bias conditions to obtain high IV. It is possible to use stray IGAO, GATE TO ANODE LEAKAGE CURRENT (nA)
capacitance but the results are generally unpredictable.
The minimum value of timing resistance is obtained using Figure 3.32. Typical Leakage Current of the 2N6027,
the following rule of thumb: 2N6028 Reverse Voltage Equals 40 V
R (min) + 2(V1 * VV)ńIV
where the valley voltage (VV) is often negligible.
To obtain minimum frequency, it is desirable to use 510 k
high values of capacitance (10 µF) and to select devices A 16 k
1 mF
and bias conditions to obtain low IP. It is important that
the capacitor leakage be quite low. Glass and mylar +
dielectrics are often used for these applications. The 20 V 0.2 mF G
–
maximum timing resistor is as follows: OUTPUT
R (max) + (VI * VP)ń2IP K
V0
20 27 k
In a circuit with a fixed value of timing capacitance, our
most sensitive PUT, the 2N6028, offers the largest
dynamic frequency range. Allowing for capacitance and
bias changes, the approximate frequency range of a PUT Figure 3.33. PUT Test Circuit for Peak Output Voltage
is from 0.003 Hz to 2.5 kHz. (Vo)

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 length of the output pulse as temperature increases is
TO TEKTRONICS responsible for this result. Since this parameter has not
510 k TYPE 567 OR been characterized, it is obvious that temperature com-
16 k EQUIVALENT
A pensation is more practical with relatively low frequency
0.001 mF RG = 10 k oscillators.
+ Various methods of compensation are shown in
V1 G
20 V –
Figure 3.36. In the low cost diode–resistor combination of
1000 pF 100 3.36(a), the diode current is kept small to cause its
K
temperature coefficient to increase. In 3.36(b), the bias
20 27 k 100 current through the two diodes must be large enough so
that their total coefficient compensates for VAG. The
transistor approach in 3.36(c) can be the most accurate
since its temperature coefficient can be varied indepen-
Figure 3.34. tr Test Circuit for PUTs dently of bias current.

100 k < R < 1 M

RT
A 1k

+
G
12 V
–
0.01 mF
K OUTPUT R
75 2k

(a) DIODE–RESISTOR

Figure 3.35. Uncompensated Oscillator

TEMPERATURE COMPENSATION
The PUT with its external bias network exhibits a
relatively small frequency change with temperature. The
uncompensated RC oscillator shown in Figure 3.35 was
tested at various frequencies by changing the timing
resistor RT. At discrete frequencies of 100, 200, 1000 and
2000 Hz, the ambient temperature was increased from 25°
to 60°C. At these low frequencies, the negative tempera-
ture coefficient of VAG predominated and caused a (b) DUAL–DIODE (c) TRANSISTOR
consistent 2% increase in frequency. At 10 kHz, the
frequency remained within 1% over the same temperature
Figure 3.36. Temperature Compensation Techniques
range. The storage time phenomenon which increases the

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 SECTION 4
THE SIDAC, A NEW HIGH VOLTAGE BILATERAL TRIGGER

Edited and Updated
The SIDAC is a high voltage bilateral trigger device
that extends the trigger capabilities to significantly higher
voltages and currents than have been previously obtain-
able, thus permitting new, cost-effective applications.
Being a bilateral device, it will switch from a blocking
state to a conducting state when the applied voltage of
either polarity exceeds the breakover voltage. As in other
trigger devices, (SBS, Four Layer Diode), the SIDAC
switches through a negative resistance region to the low
voltage on-state (Figure 4.1) and will remain on until the
main terminal current is interrupted or drops below the
holding current.
SIDAC’s are available in the large MKP3V series and
economical, easy to insert, small MKP1V series axial lead
packages. Breakdown voltages ranging from 104 to 280 V
are available. The MKP3V devices feature bigger chips
and provide much greater surge capability along with
somewhat higher RMS current ratings.
The high-voltage and current ratings of SIDACs make
them ideal for high energy applications where other
trigger devices are unable to function alone without the
aid of additional power boosting components.
The basic SIDAC circuit and waveforms, operating off
of ac are shown in Figure 4.2. Note that once the input
voltage exceeds V(BO), the device will switch on to the
forward on-voltage VTM of typically 1.1 V and can
conduct as much as the specified repetitive peak on-state
current ITRM of 20 A (10 µs pulse, 1 kHz repetition
frequency).

SLOPE = RS
ITM VTM

IH

IS
IDRM
VS
I(BO)

VDRM V(BO)

* VS)
+
(V(BO)
RS
(IS * I(BO))

Figure 4.1(a). Idealized SIDAC V-I Characteristics Figure 4.1(b). Actual MKP1V130 V-I Characteristic.
Horizontal: 50 V/Division. Vertical: 20 mA/Division.
(0,0) at Center. RL = 14 k Ohm.

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 VIN

V(BO)
VT
V(BO)

RL V(BO)
VIN I

* VS)
IH
IH
+
(V(BO) IT
RL t  RS RS
(IS * I(BO))
CONDUCTION
RS = SIDAC SWITCHING θON ANGLE θOFF
RESISTANCE

Figure 4.2. Basic SIDAC Circuit and Waveforms

Operation from an AC line with a resistive load can be
analyzed by superimposing a line with slope = – 1/RL on
the device characteristic. When the power source is AC,
the load line can be visualized as making parallel
translations in step with the instantaneous line voltage and
frequency. This is illustrated in Figure 4.3 where v1
through v5 are the instantaneous open circuit voltages of
the AC generator and i1 through i5 are the corresponding
short circuit currents that would result if the SIDAC was
not in the circuit. When the SIDAC is inserted in the
circuit, the current that flows is determined by the
intersection of the load line with the SIDAC characteris-
tic. Initially the SIDAC blocks, and only a small leakage
current flows at times 1 through 4. The SIDAC does not
turn-on until the load line supplies the breakover current
(I(BO)) at the breakover voltage (V(BO)).
If the load resistance is less than the SIDAC switching
resistance, the voltage across the device will drop quickly
as shown in Figure 4.2. A stable operating point (VT, IT)
will result if the load resistor and line voltage provide a
current greater than the latching value. The SIDAC
remains in an “on” condition until the generator voltage
causes the current through the device to drop below the
holding value (IH). At that time, the SIDAC switches to
the point (Voff, Ioff) and once again only a small leakage
current flows through the device.

i5
(VT, IT)

SLOPE + RIL v1, ..., v5 = INSTANTANEOUS OPEN

i3 CIRCUIT VOLTAGES
(VOFF, IOFF) AT TIME 1, ..., 5
RL
i
i1, ..., i5 = INSTANTANEOUS
SHORT CIRCUIT
IH CURRENTS AT

RL tȧRSȧ i1
TIME 1, ..., 5

(VBO, IBO)
v
v1 v2 v3 v4 v5
i + RvL

Figure 4.3. Load Line for Figure 4.2. (1/2 Cycle Shown.)

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 Figure 4.4 illustrates the result of operating a SIDAC
with a resistive load greater than the magnitude of its
switching resistance. The behavior is similar to that
described in Figures 4.2 and 4.3 except that the turn-on
and turn-off of the SIDAC is neither fast nor complete.
Stable operating points on the SIDAC characteristics
between (V(BO), I(BO)) and (VS, IS) result as the
generator voltage increases from v2 to v4. The voltage
v I
uȧ ȧ
RL RS
RS = SIDAC SWITCHING RESISTANCE
Figure 4.4. High Resistance Load Line with Incomplete Switching
The switching current and voltage can be 2 to 3 orders
of magnitude greater than the breakover current and
on-state voltage. These parameters are not as tightly
specified as VBO and IBO. Consequently operation of the
SIDAC in the state between fully on and fully off is
undesirable because of increased power dissipation, poor
efficiency, slow switching, and tolerances in timing.
Figure 4.5 illustrates a technique which allows the use
of the SIDAC with high impedance loads. A resistor can
be placed around the load to supply the current required to
latch the SIDAC. Highly inductive loads slow the current
rise and the turn-on of the SIDAC because of their L/R
time constant. The use of shunt resistor around the load
will improve performance when the SIDAC is used with
inductive loads such as small transformers and motors.
The SIDAC can be used in oscillator applications. If the
load line intersects the device characteristic at a point
where the total resistance (RL + RS) is negative, an
unstable operating condition with oscillation will result.
The resistive load component determines steady-state
behavior. The reactive components determine transient
behavior. Figure 4.10 shows a SIDAC relaxation oscilla-
tor application. The wide span between IBO and IH makes
the SIDAC easy to use. Long oscillation periods can be
achieved with economical capacitor sizes because of the
low device I(BO).
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across the SIDAC falls only partly as the loadline
sweeps through this region. Complete turn-on of the
SIDAC to (VT, IT) does not occur until the load line
passes through the point (VS, IS). The load line
illustrated in Figure 4.4 also results in incomplete
turn-off. When the current drops below I H, the
operating point switches to (Voff, Ioff) as shown on the
device characteristic.
(VT, IT)
RL
i4 IH
i3 (VS, IS)
i2
i1
(VOFF, IOFF)
(VBO, IBO)
v
v1 v2 v3 v4
Z1 is typically a low impedance. Consequently the
SIDAC’s switching resistance is not important in this
application. The SIDAC will switch from a blocking to
full on-state in less than a fraction of a microsecond.
The timing resistor must supply sufficient current to fire
the SIDAC but not enough current to hold the SIDAC in
an on-state. These conditions are guaranteed when the
timing resistor is selected to be between Rmax and Rmin.
For a given time delay, capacitor size and cost is
minimized by selecting the largest allowable timing
resistor. Rmax should be determined at the lowest
temperature of operation because I(BO) increases then.
The load line corresponding to Rmax passes through the
point (V(BO), I(BO)) allowing the timing resistor to
supply the needed breakover current at the breakover
voltage. The load line for a typical circuit design should
enclose this point to prevent sticking in the off state.
Requirements for higher oscillation frequencies and
greater stored energy in the capacitor result in lower
values for the timing resistor. Rmin should be deter-
mined at the highest operating temperature because IH
is lower then. The load line determined by R and Vin
should pass below IH on the device characteristic or the
SIDAC will stick in the on-state after firing once. I H is
typically more than 2 orders of magnitude greater than
IBO. This makes the SIDAC well suited for operation
over a wide temperature span.
58
 SIDAC turn-off can be aided when the load is an
under-damped oscillatory CRL circuit. In such cases,
the SIDAC current is the sum of the currents from the
timing resistor and the ringing decay from the load.
SIDAC turn-off behavior is similar to that of a TRIAC
where turn-off will not occur if the rate of current zero
crossing is high. This is a result of the stored charge
within the volume of the device. Consequently, a
SIDAC cannot be force commuted like an SCR. The
SIDAC will pass a ring wave of sufficient amplitude
and frequency. Turn-off requires the device current to
approach the holding current gradually. This is a
complex function of junction temperature, holding
current magnitude, and the current wave parameters.
RSL
RSL tȧRSȧ
TYPICAL:
L RL RSL = 2.7 k OHM
10 WATT
HIGH RS = 3 k OHM
LOW
v
RSL = TURN-ON SPEED
UP RESISTOR
RS = SIDAC SWITCHING
RESISTANCE
Figure 4.5. Inductive Load Phase Control
The simple SIDAC circuit can also supply switchable
load current. However, the conduction angle is not
readily controllable, being a function of the peak
applied voltage and the breakover voltage of the
SIDAC. As an example, for peak line voltage of about
170 V, at V(BO) of 115 V and a holding current of 100
mA, the conduction angle would be about 130°. With
higher peak input voltages (or lower breakdown
voltages) the conduction angle would correspondingly
increase. For non-critical conduction angle, 1 A rms
switching applications, the SIDAC is a very cost-effec-
tive device.
Figure 4.7 shows an example of a SIDAC used to
phase control an incandescent lamp. This is done in
order to lower the RMS voltage to the filament and
prolong the life of the bulb. This is particularly useful
when lamps are used in hard to reach locations such as
outdoor lighting in signs where replacement costs are
high. Bulb life span can be extended by 1.5 to 5 times
depending on the type of lamp, the amount of power
reduction to the filament, and the number of times the
lamp is switched on from a cold filament condition.
The operating cost of the lamp is also reduced
because of the lower power to the lamp; however, a
higher wattage bulb is required for the same lumen
output. The maximum possible energy reduction is 50%
if the lamp wattage is not increased. The minimum
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59
conduction angle is 90° because the SIDAC must switch
on before the peak of the line voltage. Line regulation
and breakover voltage tolerances will require that a
conduction angle longer than 90° be used, in order to
prevent lamp turn-off under low line voltage condi-
tions. Consequently, practical conduction angles will
run between 110° and 130° with corresponding power
reductions of 10% to 30%.
In Figure 4.2 and Figure 4.7, the SIDAC switching
angles are given by:
+ SIN*1 (V(BO)ńVpk)
ǒ@ Ǔ
qON
where Vpk = Maximum Instantaneous Line Voltage
qOFF + 180 * SIN*1 )
(I H R L) V T
V pk
where θON, θOFF = Switching Angles in degrees
VT = 1 V = Main Terminal Voltage at IT = IH
Generally the load current is much greater than the
SIDAC holding current. The conduction angle then
becomes 180° minus θ(on).
Rectifiers have also been used in this application to
supply half wave power to the lamp. SIDAC’s prevent the
flicker associated with half-wave operation of the lamp.
Also, full wave control prevents the introduction of a DC
component into the power line and improves the color
temperature of the light because the filament has less time
to cool during the off time.
The fast turn-on time of the SIDAC will result in the
generation of RFI which may be noticeable on AM radios
operated in the vicinity of the lamp. This can be prevented
by the use of an RFI filter. A possible filter design is
shown in Figure 4.5. This filter causes a ring wave of
current through the SIDAC at turn-on time. The filter
inductor must be selected for resonance at a frequency
above the upper frequency limit of human hearing and as
low below the start of the AM broadcast band as possible
for maximum harmonic attenuation. In addition, it is
important that the filter inductor be non-saturating to
prevent dI/dT damage to the SIDAC. For additional
information on filter design see page 99.
ZL
VIN SIDAC
Figure 4.6. SIDAC Circuit
 100 WATT
240 V

220 VAC 100 µHY PREM SPE304

RDC = 0.04 Ω

0.1 µF (2)MKP1V130RL

400 V
OPTIONAL
RFI FILTER

Figure 4.7. Long-Life Circuit for Incandescent Lamp

The sizing of the SIDAC must take into account the
RMS current of the lamp, thermal properties of the
SIDAC, and the cold start surge current of the lamp which
is often 10 to 20 times the steady state load current.
When lamps burn out, at the end of their operating life,
very high surge currents which could damage the SIDAC
are possible because of arcing within the bulb. The large
MKP3V device is recommended if the SIDAC is not to be
replaced along with the bulb.
Since the MKP3V series of SIDACs have relatively
tight V(BO) tolerances (104 V to 115 V for the – 115
device), other possible applications are over-voltage
protection (OVP) and detection circuits. An example of
this, as illustrated in Figure 4.8, is the SIDAC as a
transient protector in the transformer-secondary of the
medium voltage power supply, replacing the two more
expensive back-to-back zeners or an MOV. The device
Another example of OVP is the telephony applications
as illustrated in Figure 4.9. To protect the Subscriber Loop
Interface Circuit (SLIC) and its associated electronics
from voltage surges, two SIDACs and two rectifiers are
used for secondary protection (primary protection to
1,000 V is provided by the gas discharge tube across the
lines). As an example, if a high positive voltage transient
appeared on the lines, rectifier D1 (with a P.I.V. of 1,000
V) would block it and SIDAC D4 would conduct the surge
to ground. Conversely, rectifier D2 and SIDAC D3 would
protect the SLIC for negative transients. The SIDACs will
not conduct when normal signals are present.
Being a negative resistance device, the SIDAC also
can be used in a simple relaxation oscillator where the
frequency is determined primarily by the RC time
constant (Figure 4.10). Once the capacitor voltage
reaches the SIDAC breakover voltage, the device will

t
can also be used across the output of the regulator
( 100 V) as a simple OVP, but for this application, the
regulator must have current foldback or a circuit breaker
(or fuse) to minimize the dissipation of the SIDAC.
fire, dumping the charged capacitor. By placing the
load in the discharge path, power control can be
obtained; a typical load could be a transformer-coupled
xeon flasher, as shown in Figure 4.12.

SIDAC AS A TRANSIENT
PROTECTOR

SIDAC AS AN
OVP VO p 100 V
VIN REG.

Figure 4.8. Typical Application of SIDACs as a Transient Protector and OVP in a Regulated Power Supply

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 MOC3031
90 V RMS @ – 48 Vdc
RING GENERATOR
RING ENABLE
RE 0 TO + 5 V

GND
RG1

105 V 135 V

RG2

TIP RPT 1N4007

TIP
DRIVE
RT D1
TIP
SENSE SLIC
RR MC3419-1L
RING
SENSE
RPR 1N4007
RING
DRIVE
RING PRIMARY D2
PROTECTION
SECONDARY
GAS DISCHARGE
PROTECTION
TUBE – 48 V
BATTERY

Figure 4.9. SIDACs Used for OVP in Telephony Applications

V(BO)
R
VC
VIN u V(BO) VC t
iL
C ZL iL

*
ȡȧ ȣȧ
t
p
V IN V (BO)
R MAX
I (BO)

^ RC In
Ȣ* Ȥ
I

q VIN *IHVTM
t
VBO
R MIN I
VIN

Figure 4.10. Relaxation Oscillator Using a SIDAC

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 SIDAC’s provide an economical means for starting high
intensity high pressure gas discharge lamps. These lamps
are attractive because of their long operating life and high LB
efficiency. They are widely used in outdoor lighting for R
C1
these reasons. vac
Figure 4.13 illustrates how SIDAC’s can be used in
sodium vapor lamp starters. In these circuits, the SIDAC
is used to generate a short duration (1 to 20 µs) C
high-voltage pulse of several KV or more which is timed
by means of the RC network across the line to occur near
(a). Conventional HV Transformer
the peak of the AC input line voltage. The high voltage
pulse strikes the arc which lights the lamp.
In these circuits, an inductive ballast is required to
provide a stable operating point for the lamp. The lamp is
LB
a negative resistance device whose impedance changes
with current, temperature, and time over the first few
C
minutes of operation. Initially, before the lamp begins to
vac
conduct, the lamp impedance is high and the full line
voltage appears across it. This allows C to charge to the R
breakover voltage of the SIDAC, which then turns on
discharging the capacitor through a step-up transformer
generating the high voltage pulse. When the arc strikes,
the voltage across the lamp falls reducing the available (b). H.V. Auto-Transformer
charging voltage across RC to the point where VC no
longer exceeds V(BO) and the SIDAC remains off. The
low duty cycle lowers average junction temperature
improving SIDAC reliability. Normal operation approxi- LB
mates non-repetitive conditions. However, if the lamp
fails or is removed during replacement, operation of the
SIDAC will be at the 60 Hz line frequency. The design of C
the circuit should take into account the resulting steady
state power dissipation. vac

VIN HV
(c). Tapped Ballast Auto Transformer

Figure 4.13. Sodium Vapor Lamp Starter Circuits

Figure 4.11. Typical Capacitor Discharge SIDAC Circuit

220
2W +
1M
20 µF 2W Figure 4.14 illustrates a solid state fluorescent lamp
VIN ≈ 400 V 2 kW
300 V starter using the SIDAC. In this circuit the ballast is
XEON TUBE
560 k RS-272-1145 identical to that used with the conventional glow-tube
2W 125 V
starter shown in Figure 4.15.
+ The glow tube starter consists of a bimetallic switch
1 µF
200 V placed in series with the tube filaments which closes to
energize the filaments and then opens to interrupt the
4 kV PULSE TRANSFORMER
current flowing through the ballast inductor thereby
RS-272-1146 generating the high-voltage pulse necessary for starting.
The mechanical glow-tube starter is the circuit component
Figure 4.12. Xeon Flasher Using a SIDAC most likely to cause unreliable starting.

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 LB size of C determines the amount of filament heating
current by setting the impedance in the filament circuit
before ionization of the tube.
D1
The evolution of this circuit can be understood by first
D2
considering an impractical circuit (Figure 4.16).
If LB and C are adjusted for resonance near 60 Hz, the
application of the AC line voltage will result in a charging
current that heats the filaments and a voltage across the

F15T8/CW
SYLVANIA
R
115 VAC capacitor and tube that grows with each half-cycle of the
AC line until the tube ionizes. Unfortunately, C is a large
capacitor which can suddenly discharge through the tube
PTC
causing high current pulses capable of destroying the tube
filament. Also C provides a permanent path for filament
L current after starting. These factors cause short tube
operating life and poor efficiency because of filament
power losses. The impractical circuit must be modified to:
LB UNIVERSAL MFG CORP CAT200-H2
(1) Switch off the filament current after starting.
14-15-20-22 WATT BALLAST (2) Limit capacitor discharge current spikes.
325 mHY 28.9 Ω DCR In Figure 4.14 a parallel connected rectifier and SIDAC
D1 1N4005 RECTIFIER
have been added in series with the capacitor C. The
breakover voltage of the SIDAC is higher than the peak of
D2 (2) MKP1V130RL SIDAC the line voltage. Diode D1 is therefore necessary to
C 3 VFD 400 V
provide a current path for charging C.
On the first half-cycle, C resonant charges through
R 68 k OHMS 112 WATT diode D1 to a peak voltage of about 210 V, and remains at
PTC KEYSTONE CARBON COMPANY
that value because of the blocking action of the rectifier
RL3006-50-40-25-PTO and SIDAC. During this time, the bleeder resistor R has
50 OHMS/25°C negligible effect on the voltage across C because the RC
L MICROTRAN QIL 50-F
time constant is long in comparison to the line period.
50 mHY 11 OHMS When the line reverses, the capacitor voltage boosts the
voltage across the SIDAC until breakover results. This
Figure 4.14. Fluorescent Starter Using SIDAC
results in a sudden step of voltage across the inductor L,
causing resonant charging of the capacitor to a higher
voltage on the 2nd half-cycle.
The heating of the filaments causes thermonic emission
of electrons from them. These electrons are accelerated
NEON GAS
along the length of the tube causing ionization of the
argon gas within the tube. The heat generated by the
FLUORESCENT STARTER
starting current flow through the tube vaporizes the COATING
mercury droplets within the tube which then become
ionized themselves causing the resistance and voltage COATED (ARGON GAS)
across the tube to drop significantly. The drop in voltage FILAMENT
MERCURY DROPLETS
across the tube is used to turn off the starting circuit and
prevent filament current after the lamp is lit.
The SIDAC can be used to construct a reliable starter
circuit providing fast, positive lamp ignition. The starter VAC
shown in Figure 4.14 generates high voltage by means of BALLAST
a series CRL charging circuit. The circuit is roughly INDUCTOR
analogous to a TRIAC snubber used with an inductive
load, except for a lower damping factor and higher Q. The Figure 4.15. Fluorescent Lamp with Glow Tube Starter

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 BALLAST
CHOKE
fo + 2a Ǹ1 LC + 60 Hz
RB LB

C
V
VAC

Q + RTOTAL
X LB – VSTART

V max + Q VAC Ǹ2 VSTART t VMAX

Figure 4.16. Impractical Starter Circuit

(a). 5 ms/DIVISION (b). 100 ms/DIVISION

Figure 4.17. Starting Voltage Across Fluorescent Tube 100 V/DIV

0 V AT CENTER
VLine = 110 V

Several cycles of operation are necessary to approach
steady state operating conditions. Figure 4.17 shows the
starting voltage waveform across the tube.
The components R, PTC, and L serve the dual role of
guarantying SIDAC turn-off and preventing capacitor
discharge currents through the tube.
SIDAC’s can also be used with auto-transformer ballasts.
The high voltage necessary for starting is generated by the
leakage autotransformer. The SIDAC is used to turn-on the
filament transformer initially and turn it off after ionization
causes the voltage across the tube to drop.
Figure 4.18 illustrates this concept. The resistor R can
be added to aid turn-off of the SIDAC by providing a
small idle current resulting in a voltage drop across the
impedance Z. The impedance Z could be a saturable
reactor and or positive temperature coefficient thermistor.
These components help to insure stability of the system
comprised of the negative resistance SIDAC and negative
resistance tube during starting, and promote turn off of the
SIDAC.
The techniques illustrated in Figure 4.13 are also
possible methods for generation of the necessary high-
voltage required in fluorescent starting. The circuits must
be modified to allow heating of the fluorescent tube
cathodes if starting is to simulate the conditions existing
when a glow tube is used.

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 C
Z VBO
VAC
Figure 4.18. Fluorescent Starter Using SIDAC and Autotransformer Ballast
Table 4.1. Possible Sources for Thermistor Devices
Fenwal Electronics, 63 Fountain Street
Framingham MA 01701
Keystone Carbon Company, Thermistor Division
St. Marys, PA 15857
Thermometrics, 808 U.S. Highway 1
Edison, N.J. 08817
Therm-O-Disc, Inc. Micro Devices Product Group
1320 South Main Street, Mansfield, OH 44907
Midwest Components Inc., P.O Box 787
1981 Port City Boulevard, Muskegon, MI 49443
Nichicon (America) Corp., Dept. G
927 E. State Pkwy, Schaumburg, IL 60195
Thermistors are useful in delaying the turn-on or
insuring the turn-off of SIDAC devices. Table 4.1 shows
possible sources of thermistor devices.
Other high voltage nominal current trigger applications
are:
• Gas or oil igniters
• Electric fences
• HV electrostatic air filters
• Capacitor Discharge ignitions
Note that all these applications use similar circuits
where a charged capacitor is dumped to generate a high
transformer secondary voltage (Figure 4.11).
In many cases, the SIDAC current wave can be approxi-
mated by an exponential or quasi-exponential current
wave (such as that resulting from a critically damped or
slightly underdamped CRL discharge circuit). The ques-
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65
t VSTART
VBO u VOPERATING
tion then becomes; how much “real world” surge current
can the SIDAC sustain? The data sheet defines an ITSM of
20 A, but this is for a 60 Hz, one cycle, peak sine wave
whereas the capacitor discharge current waveform has a
fast-rise time with an exponential fall time.
To generate the surge current curve of peak current
versus exponential discharge pulse width, the test circuit
of Figure 4.19 was implemented. It simulates the topology
of many applications whereby a charged capacitor is
dumped by means of a turned-on SIDAC to produce a
current pulse. Timing for this circuit is derived from the
nonsymmetrical CMOS astable multivibrator (M.V.) gates
G1 and G2. With the component values shown, an
approximate 20 second positive-going output pulse is fed
to the base of the NPN small-signal high voltage transistor
Q1, turning it on. The following high voltage PNP
transistor is consequently turned on, allowing capacitor
C1 to be charged through limiting resistor R1 in about 16
seconds. The astable M.V. then changes state for about 1.5
seconds with the positive going pulse from Gate 1 fed
through integrator R2-C2 to Gate 3 and then Gate 4. The
net result of about a 100 µs time delay from G4 is to
ensure non-coincident timing conditions. This positive
going output is then differentiated by C3-R3 to produce an
approximate 1 ms, leading edge, positive going pulse
which turns on NPN transistor Q3 and the following PNP
transistor Q4. Thus, an approximate 15 mA, 1 ms pulse is
generated for turning on SCR Q5 about 100 µs after
capacitor charging transistor Q2 is turned off. The SCR
now fires, discharging C1 through the current limiting
resistor R4 and the SIDAC Device Under Test (D.U.T.).
The peak current and its duration is set by the voltage VC
across capacitor C1 and current limiting resistor R4. The
circuit has about a 240 V capability limited by C1, Q1 and
Q2 (250 V, 300 V and 300 V respectively).
 +15 V +15 V

R2 1 5 4
100 k 3 G4
G3
2 6
C2 0.001 µF
VCC p 240 V
MC14011 10 k
+15 V Q2
+15 V MJ4646
39 k
14 2W R1
12 11 47 k Q1 4k
8 10 G2 5W +15 V
G1 MPS
13 A42 SIDAC
9 7 LED C3
DUT
R4 0.1 µF
22 k 10 k
22 M 22 M 2.2 M C1
3.3 Ω 2N3906 R3
80 µF Q4
2W 10 k
250 V
1N914 Q5 1k
MCR 10 k
6507 1N
0.47 µF 1k 4003
Q3
2N3904
22 k
1N914

Figure 4.19. SIDAC Surge Tester

The SCR is required to fire the SIDAC, rather than the 100
I pk, SURGE CURRENT (AMPS)

breakover voltage, so that the energy to the D.U.T. can be

predictably controlled. 30
By varying VC, C1 and R4, the surge current curve of
Figure 4.20 was derived. Extensive life testing and Ipk
adequate derating ensure that the SIDAC, when properly 10
used, will reliably operate in the various applications. 10%
tw
3

1
0.3 1 3 10 30 100 300
tw, PULSE WIDTH (ms)

Figure 4.20. Exponential Surge Current Capability of

the MKP3V SIDAC. Pulse Width versus Peak Current

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 SECTION 5
SCR CHARACTERISTICS

Edited and Updated is necessary to apply a negative (reverse) voltage to the

device anode, causing the holes and electrons near the two
SCR TURN–OFF CHARACTERISTICS end junctions, J1 and J3, to diffuse to these junctions. This
In addition to their traditional role of power control causes a reverse current to flow through the SCR. When
devices, SCRs are being used in a wide variety of other the holes and electrons near junctions J1 and J3 have been
applications in which the SCR’s turn–off characteristics are removed, the reverse current will cease and junctions J1
and J3 will assume a blocking state. However, this does
t
important. As in example — reliable high frequency
inverters and converter designs ( 20 kHz) require a known not complete the recovery of the SCR since a high
and controlled circuit–commutated turn–off time (tq). Unfor- concentration of holes and electrons still exist near the
tunately, it is usually difficult to find the turn–off time of a center junction, J2. This concentration decreases by the
particular SCR for a given set of circuit conditions. recombination process and is largely independent of the
This section discusses tq in general and describes a external circuit. When the hole and electron concentration
circuit capable of measuring tq. Moreover, it provides data near junction J2 has reached some low value, junction J2
and curves that illustrate the effect on tq when other will assume its blocking condition and a forward voltage
parameters are varied, to optimize circuit performance. can, after this time, be applied without the SCR switching
back to the conduction state.
SCR TURN–OFF MECHANISM ANODE
The SCR, being a four layer device (P–N–P–N), is
represented by the two interconnected transistors, as ANODE
shown in Figure 5.1. This regenerative configuration P
allows the device to turn on and remain on when the gate J1
N
trigger is removed, as long as the loop gain criteria is GATE J2
satisfied; i.e., when the sum of the common base current P
gains (α) of both the equivalent NPN transistor and PNP J3
GATE N
transistor, exceed one. To turn off the SCR, the loop gain
must be brought below unity, whereby the on–state
CATHODE
principal current (anode current iT) limited by the external
circuit impedance, is reduced below the holding current CATHODE
(IH). For ac line applications, this occurs automatically P–N–P–N STRUCTURE
during the negative going portion of the waveform.
However, for dc applications (inverters, as an example),
ANODE
the anode current must be interrupted or diverted; ANODE
(diversion of the anode current is the technique used in the ITM
tq test fixture described later in this application note).
Q1 IB1 = IC2
P
SCR TURN–OFF TIME tq
N
Once the anode current in the SCR ceases, a period of N IC1 = IB2
time must elapse before the SCR can again block a P
P
forward voltage. This period is the SCR’s turn–off time, Q2
GATE GATE
tq, and is dependent on temperature, forward current, and N
other parameters. The turn–off time phenomenon can be
understood by considering the three junctions that make CATHODE
up the SCR. When the SCR is in the conducting state, CATHODE
each of the three junctions is forward biased and the N and
P regions (base regions) on either side of J2 are heavily TWO TRANSISTOR MODEL
saturated with holes and electrons (stored charge). In
order to turn off the SCR in a minimum amount of time, it Figure 5.1. Two Transistor Analogy of an SCR

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tq MEASUREMENT
When measuring SCR turn–off time, tq, it is first
necessary to establish a forward current for a period of
time long enough to ensure carrier equilibrium. This must
be specified, since ITM has a strong effect on the turn–off
time of the device. Then, the SCR current is reversed at a
specified di/dt rate, usually by shunting the SCR anode to
some negative voltage through an inductor. The SCR will
then display a “reverse recovery current,” which is the
charge clearing away from the junctions. A further
waiting time must then elapse while charges recombine,
before a forward voltage can be applied. This forward
voltage is ramped up a specified dv/dt rate. The dv/dt
delay time is reduced until a critical point is reached
where the SCR can no longer block the forward applied
voltage ramp. In effect, the SCR turns on and conse-
quently, the ramp voltage collapses. The elapsed time
between this critical point and the point at which the
forward SCR current passes through zero and starts to go
negative (reverse recovery phase), is the tq of the SCR.
This is illustrated by the waveforms shown in Figure 5.2.
tq GENERAL TEST FIXTURE
The simplified circuit for generating these waveforms is
schematically illustrated in Figure 5.3. This circuit is
implemented with as many as eight transformers includ-
ing variacs, and in addition to being very bulky, has been
known to be troublesome to operate. However, the
configuration is relevent and, in fact, is the basis for the
design, as described in the following paragraphs.
tq TEST FIXTURE BLOCK DIAGRAMS AND WAVEFORMS
The block diagram of the tq Test Fixture, illustrated in
Figure 5.4, consists of four basic blocks: A Line
ITM
50% ITM
50% IRM
IRM
VT
Figure 5.2. SCR Current and Voltage Waveforms During Circuit–Commutated Turn–Off
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Synchronized Pulse Generator establishes system timing;
a Constant Current Generator (variable in amplitude)
powers the Device Under Test (DUT); a di/dt Circuit
controls the rate of change of the SCR turn–off current;
and the dv/dt Circuit reapplies a controlled forward
blocking voltage. Note from the waveforms illustrated
that the di/dt circuit, in parallel with the DUT, diverts the
constant current from the DUT to produce the described
anode current ITM.
tq TEST FIXTURE CHARACTERISTICS
The complete schematic of the tq Test Fixture and the
important waveforms are shown in Figures 5.5 and 5.6,
respectively.
A CMOS Gate is used as the Line Synchronized Pulse
Generator, configured as a wave shaping Schmitt trigger,
clocking two cascaded monostable multivibrators for delay
and pulse width settings (Gates 1C to 1F). The result is a
pulse generated every half cycle whose width and position
(where on the cycle it triggers) are adjustable by means of
potentiometers R2 and R3, respectively. The output pulse is
normally set to straddle the peak of the ac line, which not
only makes the power supplies more efficient, but also
allows a more consistent oscilloscope display. This pulse
shown in waveform A of Figure 5.6 initiates the tq test,
which requires approximately 0.5 ms to assure the device a
complete turn on. A fairly low duty cycle results, (approxi-
mately 5%) which is important in minimizing temperature
effects. The repetitive nature of this test permits easy oscillo-
scope viewing and allows one to readily “walk in” the dv/dt
ramp. This is accomplished by adjusting the appropriate
potentiometer (R7) which, every 8.33 ms (every half cycle)
will apply the dv/dt ramp at a controlled time delay.
di/dt
IDX
trr
tq VDX
dv/dt
68
 S2
S3 L1 R2
IT

D1
D2
S1
dv/dt
di/dt
IT
D3
I1
V2
S4 DUT

C1

V1 R1
V3

Figure 5.3. Simplified tq Test Circuit

To generate the appropriate system timing delays, four CONSTANT

RC integrating network/comparators are used, consisting CURRENT
of op–amps U2, U5 and U6. GENERATOR
D1
Op–amp U2A, along with transistor Q2, opto–coupler U4
and the following transistors Q6 and Q7, provide the gate
IT
drive pulse to the DUT (see waveforms B, C and D of DUT
dv CIRCUIT di CIRCUIT
Figure 5.6). The resulting gate current pulse is about 50 µs dt dt
LINE SYNC
wide and can be selected, by means of switch S2, for an IGT IGT
PULSE
of from about 1 mA to 90 mA. Opto–coupler U4, as well as GENERATOR
U1 in the Constant Current Circuit, provide electrical
isolation between the power circuitry and the low level
circuitry. CONSTANT
CURRENT
The Constant Current Circuit consists of an NPN Darling-
ton Q3, connected as a constant current source driving a
PNP tri–Darlington (Darlington Q4, Bipolar Q5). By vary- di/dt
ing the base voltage of Q3 (with Current Control potentiom-
eter R4), the collector current of Q3 and thus the base IT di/dt
voltage of Q4 will also vary. The PNP output transistor Q5
0
(MJ14003) (rated at 70 A), is also configured as a constant
V1
current source with four, parallel connected emitter resistors dv/dt
dv/dt
(approximately 0.04 ohms, 200 W), thus providing as much
as 60 A test current. Very briefly, the circuit operates as
follows: — CMOS Gate 1E is clocked high, turning on, in
order, a) NPN transistor Q16, b) PNP transistor Q1, c)
Figure 5.4. Block Diagram of the tq Test Fixture
optocoupler U3, and d) transistors Q3, Q4 and Q5. The and Waveforms
board mounted Current Set potentiometer R5, sets the
maximum output current and R4, the Current Control, is a
front panel, multiturn potentiometer.

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 LINE SYNCHRONIZED PULSE GENERATOR
+ 10 V
R2
U1 PULSE
+ 10 V MC14572 DELAY + 10 V
220 k
CONTROL
+ 10 V 1M
1N914 0.01
1k 22 k 2 1 4 16 220 pF µF 150 k 100 k 15 0.1 µF 11
6 9 12
1A 1B 1E 1F
1C 1D
8 3 5 10 14 13
TRIAD 10 k 100 k 7 0.001 4.7 k
F93X µF
+ 10 V
1N4001 25 k R3 POWER ON
2 + 10 V + 20 V (UNLOADED) 2 A S.B.
3 LM317T 1k PULSE WIDTH
+ 12 V (LOADED)

SWD
Q1

120 V
+ U7 1.5 k CONTROL 0.1 µF
2000 + 2N
240 50 µF 47 k 200 V SW S1 120 V
µF 25 V 1 20 V 3906 2N3904
Q16 (4) 0.15 Ω, 50 W 60 Hz
–V1 1.8 k 10 k 0.1 µF, 200 V
– 18 V CONSTANT 1.2 k +
TYP CURRENT 2W 50,000 STANCOR
1/2 W 330 CIRCUIT 47 0.1 µF P6337
1k 2N6042 2W µF
20,000 + 1W – 10 V 25 V
–5 V 1N + 10 V Q4
µF 25 V 914 430 MJ
10 V 510 k 10 k 100 14003
100 µF 2W 5 1W
+ 20 V Q5 di
0.1 CIRCUIT
12 k + 10 V 4N35 100 L1 (3) MTM15N06E dt
µF 1/2 W
1N4733 0.1 µF U3 *
5.1 V, 1 W 1N4740 Q3 Q10 Q11 Q12
+ 2 4 100 k 560 560 560
10 V, 1 W 3 1N4728 3.3 k
Q2 1k 2W 2W 2W
2 U2A .001
CURRENT MPS
820 pF 3.3 V A13 D1 1N 0.001
– CONTROL 5370A µF
R4 1.2 K 1K µF 1K
(1/2) 1k 100 56 V 2W 2W 2W
MC1458 2N3904 CURRENT 5W
1W GATE CURRENT

70
SET – V2 o 1N 0.001 1N 0.002 1N
R5 SW S2 5932A µF 5932A µF 5932A
+ 10 V – V1 20 V
1 5 + 10 V MR856 1.5 W
82 90 mA
4N35 1k 2N 120 70 IT

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L1: 0 µH (TYP) U4 4919 DUT 150 k I1
+ V1
Q7 160 50 R1 + 10 V
*DIODE REQUIRED WITH L1 2 4 V o
100 20 330 30 o A
470
1k 1W 1000 MJE254
D1: MR506 FOR 3 A, HIGH tq DUTS 1W 820 10 150 0.001 µF
1k C1 MTM2N90 Q9
MR856 FOR 3 A, LOW tq DUTS 1k Q15 56
(DIODE IF SCALED TO DUT IA) Q6 1k 2W
1k 10 k
8.2 k 1 mA o
I1: ≈ 50 mA FOR HIGH tq DUTS 10 k 1N 2W
SW.53 –5V 4747
V1 2N3904 OFF 2N4401
50 V + 10 V BIAS + 10 V 1N4728 Q8 SYNC
(TYP) + 10 V
R1 1 k 0.1 – V1 OUT
0.1 µF – 18 V 10 k
µF 100
≈ 1 A FOR LOW tq 10 k
3.3 k 1N
U6 1k MJE 470 914
V1 VREF MC1741 7 1N4728
50 V 3 1.8 k 250
(TYP) + 6
R1 50 150 k, 10 T 1 k 2 U6 2N3904 Q14
R6
4.7 k ON TIME
– 4
3.3 V 10 k Q13
C1: DETERMINED BY SPEC dv/dt 0.1 0.001 µF + 10 V
50 k CONTROL 0.1 µF dv
µF CIRCUIT
– V2: – 12 V (TYP), t – 50 V tq TIME 0.1 µF dt
5 + CONTROL R7 – 10 V 39 k – 10 V
7 5 8 10 µF
0.02 6 U2B + 7 15 V
µF (1/2) 0.002 6 –U5 +
– MC1458 µF 4 (1/2)
MC1458
U5

Figure 5.5. tq Test Fixture

Time delay for the di/dt Circuit is derived from
cascaded op–amps U2B and U5 (waveforms F and G of
Figure 5.6). The output gate, in turn, drives NPN
transistor Q8, followed by PNP transistor Q9, whose
output provides the gate drive for the three parallel
connected N–channel power MOSFET transistors
Q10 – Q12 (waveforms H of Figure 5.6). These three
FETs (MTM15N06), are rated at 15 A continuous drain
current and 40 A pulsed current and thus can readily
divert the maximum 60 A constant current that the
Fixture can generate. The results of this diversion from
the DUT is described by waveforms E, H and I of
Figure 5.6, with the di/dt of of ITM dictated by the series
inductance L1. For all subsequent testing, the inductor
was a shorting bar, resulting in very little inductance
and consequently, the highest di/dt (limited primarily
by wiring inductance). When a physical inductor L1 is
used, a clamp diode, scaled to the diverted current,
should be placed across L1 to limit “inductive kicks.”
dv/dt CIRCUIT
The last major portion of the Fixture, the dv/dt Circuit,
is variable time delayed by the multi–turn, front panel tq
Time Control potentiometer R7, operating as part of an
integrator on the input of comparator U6. Its output
(waveform J of Figure 5.6) is used to turn–off, in order, a)
normally on NPN transistor Q13, b) PNP transistor Q14
and c) N–channel power MOSFET Q15 (waveform L of
Figure 5.6). This FET is placed across ramp generating
capacitor C1, and when unclamped (turned off), the
capacitor is allowed to charge through resistor R1 to the
supply voltage + V1. Thus, the voltage appearing on the
drain will be an exponentially rising voltage with a dv/dt
dictated by R1, C1, whose position in time can be
advanced or delayed. This waveform is then applied
through a blocking diode to the anode of the DUT for the
forward blocking voltage test.
Another blocking diode, D1, also plays an important
role in tq measurements and must be properly selected. Its
purpose is to prevent the dv/dt ramp from feeding back
into the Current Source and di/dt Circuit and also to
momentarily apply a reverse blocking voltage (a function
of – V2 of the di/dt circuit) to the DUT. Consequently, D1
must have a reverse recovery time trr greater than the
DUT, but less than the tq time. When measuring standard
recovery SCRs, its selection — fast recovery rectifiers or
standard recovery — is not that critical, however, for fast
recovery, low tq SCRs, the diode must be tailored to the
DUT to produce accurate results. Also, the current rating
of the diode must be compatible with the DUT test
current. These effects are illustrated in the waveforms
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71
shown in Figure 5.7 where both a fast recovery rectifier
and standard recovery rectifier were used in measuring tq
of a standard 2N6508 SCR. Although the di/dt’s were the
same, the reverse recovery current IRM and trr were
greater with the standard recovery rectifier, resulting in a
somewhat shorter tq (59 µs versus 63 µs). In fact, tq is
affected by the initial conditions (ITM, di/dt, IRM, dv/dt,
etc.) and these conditions should be specified to maintain
measurement repeatability. This is later described in the
published curves and tables.
Finally, the resistor R1 and the resultant current I1 in the
dv/dt circuit must meet certain criteria: I1 should be
greater than the SCR holding current so that when the
DUT does indicate tq limitation, it latches up, thus
suppressing the dv/dt ramp voltage; and, for fast SCRs
(low tq), I1 should be large enough to ensure measurement
repeatability. Typical values of I1 for standard and fast
SCRs may be 50 mA and 500 mA, respectively.
Obviously, for high forward blocking voltage + V1 tests,
the power requirements must be met.
EFFECTS OF GATE BIAS ON tq
Examples of the effects of I1 on tq are listed in
Table 5.III whereby standard and fast SCRs were tested
with about 50 mA and 1 A, respectively. Note that the low
tq SCR’s required fast recovery diodes and high I1 current.
TEST FIXTURE POWER SUPPLIES
Most of the power supplies for the system are self
contained, including the + 12 V supply for the Constant
Current Circuit. This simple, unregulated supply furnishes
up to 60 A peak pulsed current, primarily due to the line
synchronized operation of the system. Power supplies
+V1 and – V2, for this exercise, were external supplies,
since they are variable, but they can be incorporated in the
system. The reverse blocking voltage to the DUT is
supplied by – V2 and is typically set for about – 10 V to
– 20 V, being limited to the breakdown voltage of the
diverting power MOSFETS (VDSS = 60 V). The + 12 V
unregulated supply can be as high as + 20 V when
unloaded; therefore, – V2 (MAX), in theory, would be
– 40 V but should be limited to less than – 36 V due to the
56 V protective Zener across the drain–source of the
FETs. Also, – V2 must be capable of handling the peak
60 A, diverting current, if so required.
The reapplied forward blocking voltage power supply
+V1, may be as high as the DUT VDRM which conceiv-
ably can be 600 V, 1,000 V or greater and, since this
supply is on most of the time, must be able to supply the
required I1. Due to the sometimes high power require-
ments, + V1 test conditions may have to be reduced for
extremely fast SCRs.
PARAMETERS AFFECTING tq
To see how the various circuit parameters can affect tq,
one condition at a time is varied while the others are held
constant. The parameters to be investigated are a) forward
current magnitude (ITM), b) forward current duration,
c) rate of change of turn–off current (di/dt), d) reverse–
current magnitude (IRM), e) reverse voltage (VRM), f) rate
of reapplied forward voltage (dv/dt), g) magnitude limit
of reapplied voltage, h) gate–cathode resistance and
i) gate drive magnitude (IGT).
Typical data of this kind, taken for a variety of SCRs,
including standard SCRs, high speed SCRs, is con-
densed and shown in Table 5.1. The data consists of the
different conditions which the particular SCR types
were subjected to; ten SCRs of each type were
serialized and tested to each condition and the ten tq’s
were averaged to yield a “typical tq.”
The conditions listed in Column A in Table 5.1, are
typical conditions that might be found in circuit opera-
tion. Columns B through J in Table 5.1, are in order of
increasing tq; the conditions listed in these columns are
only the conditions that were modified from those in
Column A and if a parameter is not listed, it is the same as
in Column A.

Q1 COL.
A
U2, P1
B

U4, P4
C
IGT
D
CONSTANT
CURRENT
GEN. E
Q5 COL.
U2, P7
F
U5, P7
G
Q9 COL.
Q10–Q12
di/dt H
CIRCUIT
IT
DUT I

U6, P6 J
dv/dt
CIRCUIT
Q15 K
GATE
dv/dt
Q15
DRAIN L
dv/dt
OUTPUT 0 200 400 600 800
t, TIME (µs)

Figure 5.6. tq Test Fixture System Waveforms

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72
 I = 2 A/Div

0A
V = 10 V/Div

0V

tq = 63 µs t = 50 µs/Div t = 1 µs/Div

D1 = MR856, FAST RECOVERY RECTIFIER

I = 2 A/Div

0A
V = 10 V/Div

0V

tq = 59 µs t = 1 µs/Div
t = 50 µs/Div

D1 = 1N5402, STANDARD RECOVERY RECTIFIER

Figure 5.7. The Effects of Blocking Diode D1 on tq of a 2N6508 SCR

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 Table 5.1. Parameters Affecting tq
Device A B C D E F G H I
2N6508 RGK = 1 k
25 A dv/dt = 15 V/µs
600 V ITM = 25 A RGK = 100 RGK = 100
IRM = 14 A dv/dt = 2.4 V/µs dv/dt = 2.4 V/µs RGK = 100
di/dt = – 100 A/µs ITM = 1 A ITM = 2 A dv/dt = 2.4 V/µs RGK = 100
ITM duration = 275 µs IRM = 1.8 A IRM = 50 mA IRM = 50 mA RGK = 100 RGK = 1 dv/dt = 2.4 V/µs
IGT = 30 mA di/dt = 32 A/µs di/dt = 0.5 µs di/dt = 0.45 A/µs dv/dt = 2.4 V/µs dv/dt = 2.4 V/µs ITM = 37 A RGK = 100 IGT = 90 mA

typ tq = 68 µs typ tq = 42 µs typ tq = 45 µs typ tq = 49 µs typ tq = 60 µs typ tq = 64 µs typ tq = 64 µs typ tq = 65 µs typ tq = 68 µs

2N6399 RGK = 1 k
12 A dv/dt = 90 V/µs
ITM = 12 A RGK = 100 RGK = 100 RGK = 100
IRM = 11 A dv/dt = 2.5 V/µs dv/dt = 2.5 V/µs RGK = 100 dv/dt = 2.5 V/µs RGK = 1
di/dt = – 100 A/µs ITM = 1 A ITM = 1 A dv/dt = 2.5 V/µs ITM = 18 A dv/dt = 2.5 V/µs
ITM duration = 275 µs IRM = 50 mA IRM = 2.7 A IRM = 50 mA IRM = 50 mA IRM = 50 mA
IGT = 30 mA di/dt = – 0.5 A/µs di/dt = 56 A/µs di/dt = 32 A/µs di/dt = 0.3 A/µs di/dt = 0.35 A/µs RGK = 100 IGT = 90 mA

typ tq = 48 µs typ tq = 30 µs typ tq = 31 µs typ tq = 32 µs typ tq = 33 µs typ tq = 35.5 µs typ tq = 45 µs typ tq = 48 µs

74
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 Table 5.1. Continued
Device A B C D E F G H I
C106B IGT = 1 mA
4A RGK = 1 k
dv/dt = 5 V/ms
ITM = 4A
IRM = 4A ITM = 2 A ITM = 6 A ITM = 6 A dv/dt = 1.4 V/ms IGT = 90 mA
di/dt = 50 A/ms IRM = 2.5 A IRM = –1 A/ms IRM = 0.1 A ITM = 2 A –V2 = 35 V IRM = 0.15 A dv/dt = 1.4 V/ms dv/dt = 1.4 V/ms
ITM duration = 275 ms di/dt = –30 A/ms di/dt = –1 A/ms di/dt = –1 A/ms IRM = 0.2 A IRM = 0.2 A –V2 = 4 V IRM = 0.15 A IRM = 2 A
VDX = 50 V VDX = 50 V VDX = 150 V VDX = 50 V di/dt = –1.4 A/ms di/dt = –1.4 A/ms di/dt = –1.4 A/ms di/dt = 1.4 A/ms di/dt = –1.4 A/ms
typ tq = 28 ms typ tq = 25 ms typ tq = 26 ms typ tq = 26 ms typ tq = 26 ms typ tq = 27 ms typ tq = 27 ms typ tq = 27 ms typ tq = 27 ms

2N6240 RGK = 1 k
4A dv/dt = 40 V/ms RGK = 100
ITM = 4 A dv/dt = 1.3 V/ms RGK = 100 dv/dt = 1.75 V/ms RGK = 1
IRM = 4 A ITM = 1 A dv/dt = 1.75 V/ms RGK = 100 RGK = 100 dv/dt = 1.75 V/ms
di/dt = 50 A/ms IRM = 50 mA ITM = 1 A dv/dt = 1.75 V/ms ITM = 6 A RGK = 100 ITM = 1 A
ITM duration = 275 ms di/dt = –0.5 A/ms IRM = 50 mA IRM = 50 mA IRM = 50 mA IRM = 50 mA IRM = 50 mA
IGT = 1 mA IGT = 90 mA di/dt = –0.5 A/ms di/dt = –0.5 A/ms di/dt = –0.5 A/ms di/dt = –0.5 A/ms RGK = 100 di/dt = –0.5 A/ms
VDX = 50 V VDX = 150 V IGT = 90 mA IGT = 90 mA IGT = 90 mA IGT = 90 mA IGT = 900 mA IGT = 90 mA IGT = 90 mA

typ tq = 44.8 ms typ tq = 26 ms typ tq = 26.2 ms typ tq = 27.7 ms typ tq = 28.6 ms typ tq = 30 ms typ tq = 32.7 ms typ tq = 37.2 ms typ tq = 41.4 ms

MCR100–6 RGK = 1 k
0.8 A dv/dt = 160 V/ms
ITM = 0.8 A dv/dt = 30 V/ms
IRM = 0.8 A dv/dt = 30 V/ms dv/dt = 30 V/ms ITM = 1.12 A

75
di/dt = 12 A/ms ITM = 0.25 A dv/dt = 30 V/ms –V2 = 9 V –V2 = 1 V ITM = 1.12 A IRM = 40 mA
VDX = 50 V IRM = 40 mA Ir = 40 mA IRM = 20 mA Ir = 40 mA IRM = 40 mA di/dt = –0.8 A/ms
ITM duration = 275 ms di/dt = –0.6 A/ms di/dt = –0.8 A/ms di/dt = –0.4 A/ms di/dt = –0.8 A/ms di/dt = –0.8 A/ms VDX = 100 V

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typ tq = 14.4 ms typ tq = 12.7 ms typ tq = 13.5 ms typ tq = 13.7 ms typ tq = 13.9 ms typ tq = 14.4 ms typ tq = 14.4 ms

2N5064 RGK = 1 k
0.8 A dv/dt = 30 V/ms
ITM = 0.8 A VDX = 100 V
IRM = 0.8 A dv/dt = 5 V/ms dv/dt = 5 V/ms dv/dt = 5 V/ms
di/dt = 12 A/ms ITM = 0.2 A dv/dt = 5 V/ms ITM = 1.12 A IRM = 40 mA IRM = 40 mA ITM = 1.12 A
ITM duration = 275 ms IRM = 50 mA IRM = 50 mA IRM = 50 mA –V2 = 9 V –V2 = 1 V IRM = 50 mA
VDX = 50 V di/dt = –0.6 A/ms di/dt = –0.8 A/ms di/dt = –0.8 A/ms di/dt = –0.45 A/ms di/dt = –0.8 A/ms di/dt = –0.8 A

typ tq = 28.9 ms typ tq = 27/ms typ tq = 30/ms typ tq = 31 ms typ tq = 31.2 ms typ tq = 31.4 ms typ tq = 31.7 ms

2N5061 dv/dt = 10 V/ms

0.8 A ITM = 0.8 A
IRM = 0.8 A dv/dt = 3.5 V/ms
di/dt = 18 A/ms dv/dt = 3.5 V/ms ITM = 1.12 A dv/dt = 3.58/ms
ITM duration = 275 ms ITM = 0.25 A dv/dt = –3.5 V/ms IRM = 40 mA ITM = 1.12 A –V2 = 4 V –V2 = 1 V
RGK = 1 k IRM = 40 mA IRM = 40 mA di/dt = –0.8 A/ms IRM = 40 mA IRM = 20 mA IRM = 40 mA
VDX = 30 V di/dt = –0.7 A/ms di/dt = –0.8 A/ms VDX = 60 V di/dt = –0.7 A/ms di/dt = –0.2 A/ms di/dt = –0.8 A/ms
typ tq = 31.7 ms typ tq = 19.1 ms typ tq = 19/ms typ tq = 19.8 ms typ tq = 20.2 ms typ tq = 30 ms typ tq = 30.2 ms
 Table 5.2 is a condensed summary of Table 5.1 and 1st 2nd
shows what happens to the tq of the different devices when Parameter Changed Device Columns (µs) (µs)
a parameter is varied in one direction or the other. IGT Increase 2N6508 AI 68 68
2N6399 AG 48 48
THE EFFECT OF CHANGING PARAMETERS 2N6240 AI 44.8 41.4
C106F HI 27 27
ON tq
Decrease RGK 2N6508 AH 68 65
From Tables 5.1 and 5.2, it is clear that some 1 k to 100 ohms 2N6399 AG 48 45
parameters affect tq more than others. The following 2N6240 GI 41.4 32.7
discussion describes the effect on tq of the various Increase RGK 2N6508 EF 60 64
parameters. 1 k toR 2N6399 DF 32 35.5
2N6240 CH 26.2 37.2
FORWARD CURRENT MAGNITUDE (ITM) VDX C106F DC 26 26
Of the parameters that were investigated, forward–cur- 2N6240 BC 26.2 26
rent magnitude and the di/dt rate have the strongest effect MCR100–6 FG 14.4 14.4
on tq. Varying the ITM magnitude over a realistic range of 2N5064 DG 31 31.7
ITM conditions can change the measured tq by about 30%. 2N5061 DE 20.2 19.8
The change in tq is attributed to varying current densities Decrease dv/dt Rate 2N6508 EH 65 60
(stored charge) present in the SCR’s junctions as the ITM C106F HJ 29 27
magnitude is changed. Thus, if a large SCR must have a 2N6240 DF 30 27.7
short tq when a low ITM is present, a large gate trigger Increase ITM 2N6508 EG 60 64
pulse (IGT magnitude) would be advantageous. This turns 2N6399 DE 32 33
C106F EH 26 27
on a large portion of the SCR to minimize the high current
2N6240 DC 26.2 27.7
densities that exists if only a small portion of the SCR DE 27.7 28.6
were turned on (by a weak gate pulse) and the low ITM did CE 26.2 28.6
not fully extend the turned on region. MCR100–6 CF 13.5 14.4
In general, the SCR will exhibit longer tq times with 2N5064 CD 30.7 31
2N5061 BE 19.1 20.7
increasing ITM. Increasing temperature also increases the
tq time.
Table 5.2. The Effects of Changing Parameters on tq
di/dt RATE
Varying the turn–off rate of change of anode current By using different series inductors and changing the
di/dt does have some effect on the tq of SCRs. Although negative anode turn–off voltage, it is possible to keep the
the increase in tq versus increasing di/dt was nominal for di/dt rate constant while changing IRM. It was found that
the SCRs illustrated, the percentage change for the fast IRM has little or no effect on tq when it is the only variable
SCRs was fairly high (about 30 – 40%). changed (see Table 5.1 C106F, Columns F and G, for
example).
REVERSE CURRENT MAGNITUDE (IRM)
The reverse current is actually due to the stored REVERSE ANODE VOLTAGE (VRM)
charge clearing out of the SCR’s junctions when a Reverse anode voltage has a strong effect on the IRM
negative voltage is applied to the SCR anode. IRM is magnitude and the di/dt rate, but when VRM alone is
very closely related to the di/dt rate; an increasing di/dt varied, with IRM and di/dt held constant, little or no
rate causing an increase of IRM and a decreasing di/dt change in tq time was noticed. VRM must always be within
rate causing a lower IRM. the reverse voltage of the device.

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 Gate Bias Conditions + V1 RI dv/dt (v/µs)
0V –5V – V2 = –10 V, IF = 3 A 50 V 1 k/50 2.5/50
Device
Diode dv/dt
tq1 tq2 Remarks
DI (V/µs)
Slow
2N6508 40 µs 30 µs 2.5 Slow diode faster than fast diode, (lower tq)
MR502
2N6240 16 µs 9 µs Slow 2.5 Slow diode faster. 2.5 V/µs faster than 50 V/µs
2N6399 30 µs 25 µs Slow 2.5 Tested slow diode only
C106F 13 µs 8 µs Slow 2.5 Tested slow diode only
Table 5.3 The Effects of Gate Bias on tq

25 MAGNITUDE LIMIT OF REAPPLIED dv/dt (VDX)

STANDARD SCR di/dt
Changing the magnitude limit of the reapplied dv/dt
20 C106 : 5 A/ µs voltage has little or no effect on a given SCR’s tq time
C106F
t q, TURN-OFF TIME (µs)

dv/dt : 45 V/ µs
RGK : 100 Ω
when the maximum applied voltage is well below the
15 TA : 25°C voltage breakdown of the SCR. The tq times will lengthen
if the SCR is being used near its voltage breakdown, since
10 the leakage present near breakdown is higher than at
lower voltage levels. The leakage will lengthen the time it
5 takes for the charge to be swept out of the SCR’s center
junction, thus lengthening the time it takes for this
0 junction to return to the blocking state.
1 2 5 10 20 50
ITM, ANODE CURRENT (AMPS) GATE CATHODE RESISTANCE (RGK)
In general, the lower the RGK is, the shorter the tq time
Figure 5.8. Standard SCR Turn–Off Time tq as a
will be for a given SCR. This is because low RGK aids in
Function of Anode Current ITM
the removal of stored charge in the SCR’s junctions. An
approximate 15% change in the tq time is seen by
changing RGK from 100 ohms to 1000 ohms for the DUTs.

GATE DRIVE MAGNITUDE (IGT)

REAPPLIED dv/dt RATE
Varying the reapplied dv/dt rate across the range of
dv/dt’s commonly encountered can vary the tq of a given
SCR by more than 10%. The effect of the dv/dt rate on tq
is due to the Anode–Gate capacitance. The dv/dt applied
at the SCR anode injects current into the gate through this
capacitance (iGT = C dv/dt). As the dv/dt rate increased,
the gate current also increases and can trigger the SCR on.
To complicate matters, this injected current also adds to
the current due to leakage or stored charge left in the
junctions just after turn–off.
The stored charge remaining in the center junction is
the main reason for long tq times and, for the most part,
the charge is removed by the recombination process. If the
reapplied dv/dt rate is high, more charge is injected into
this junction and prevents it from returning to the
blocking state, as soon as if it were a slow dv/dt rate. The
higher the dv/dt rate, the longer the tq times will be.
Changing the gate drive magnitude has little effect on a
SCR’s tq time unless it is grossly overdriven or underdri-
ven. When it is overdriven, there is an unnecessary large
amount of charge in SCR’s junction. When underdriven, it
is possible that only a small portion of the chip at the gate
region turns on. If the anode current is not large enough to
spread the small turned on region, there is a high current
and charge density in this region that consequently
lengthens the tq time.
FORWARD CURRENT DURATION
Forward current duration had no measurable effect on tq
time when varied from 100 µs to 300 µs, which were the
limits of the ON Semiconductor tq Tester. Longer ITM
durations heat up the SCR which causes temperature
effects; very short ITM durations affect the tq time due to
the lack of time for the charges in the SCR’s junctions to
reach equilibrium, but these effects were not seen in the
range tested.

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REVERSE GATE BIAS VOLTAGE
As in transistor operation, reverse biasing the gate of
the SCR decreases the turn–off time, due to the rapid
“sweeping out” of the stored charge. The reduction in tq
for standard SCRs is quite pronounced, approaching
perhaps 50% in some cases; for fast SCRs, only nominal
improvement might result. Table 5.3 shows this effect on
six SCRs where the gate bias was set for 0 V and – 5 V,
respectively (the 1 k gate resistor of the DUT was either
grounded or returned to – 5 V). Due to the internal,
monolithic resistor of most SCRs, the actual reverse bias
voltage between the gate–cathode is less than the reverse
bias supply.
CHARACTERIZING SCRs FOR CROWBAR
APPLICATIONS
The use of a crowbar to protect sensitive loads from
power supply overvoltage is quite common and, at the
first glance, the design of these crowbars seems like a
straightforward, relatively simple task. The crowbar SCR
is selected so as to handle the overvoltage condition and a
fuse is chosen at 125 to 250% of the supply’s rated
full–load line current. However, upon further investiga-
tion, other questions and problems are encountered.
How much overvoltage and for how long (energy) can
the load take this overvoltage? Will the crowbar respond
too slowly and thus not protect the load or too fast
resulting in false, nuisance triggering? How much energy
can the crowbar thyristor (SCR) take and will it survive
until the fuse opens or the circuit breaker opens? How fast
will the fuse open, and at what energy level? Can the fuse
adequately differentiate between normal current levels —
including surge currents — and crowbar short circuit
conditions?
It is the attempt of this section to answer these questions
— to characterize the load, crowbar, and fuse and thus to
match their characteristics to each other.
The type of regulator of most concern is the low
voltage, series pass regulator where the filter capacitors to
be crowbarred, due to 60 Hz operation, are relatively large
and the charge and energy stored correspondingly large.
On the other hand, switching regulators operating at about
20 kHz require smaller capacitors and thus have lower
crowbar constraints.
These regulators are quite often line–operated using a
high voltage, two–transistor inverter, half bridge or full
bridge, driving an output step–down transformer. If a
transistor were to fail, the regulator–transformed power
would be less and the output voltage would drop, not rise,
as is the case for the linear series regulator with a shorted
pass transistor. Thus, the need for overvoltage protection
of these types of switching regulators is minimized.
This premise, however, does not consider the case of
the lower power series switching regulator where a
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shorted transistor would cause the output voltage to
rise. Nor does it take into account overvoltage due to
transients on the output bus or accidental power supply
hookup. For these types of operations, the crowbar SCR
should be considered.
HOW MUCH OVERVOLTAGE CAN THE
LOAD TAKE?
Crowbar protection is most often needed when ICs are
used, particularly those requiring a critical supply voltage
such as TTL or expensive LSI memories and MPUs.
If the load is 5 V TTL, the maximum specified
continuous voltage is 7 V. (CMOS, with its wide power
supply range of 3 to 18 V, is quite immune to most
overvoltage conditions.) But, can the TTL sustain 8 V or
10 V or 15 V and, if so, for how long and for how many
power cycles? Safe Operating Area (SOA) of the TTL
must be known. Unfortunately, this information is not
readily available and has to be generated.
20
V , SUPPLY VOLTAGE (VOLTS)
18 TJ ≈ 85°C, DUTY CYCLE = 10%
VCC
5V
16 PULSE WIDTH
14
12
CC
10
1 5 10 30 50 100 300 500
PULSE WIDTH (ms)
Figure 5.9. Pulsed Supply Voltage versus Pulse Width
Using the test circuit illustrated in Appendix III, a
quasi–SOA curve for a typical TTL gate was generated
(Figure 5.9). Knowing the overvoltage–time limit, the
crowbar and fuse energy ratings can be determined.
The two possible configurations are illustrated in
Figure 5.10, the first case shows the crowbar SCR across
the input of the regulator and the second, across the
output. For both configurations, the overvoltage compara-
tor senses the load voltage at the remote load terminals,
particularly when the IR drop of the supply leads can be
appreciable. As long as the output voltage is less than that
of the comparator reference, the crowbar SCR will be in
an off state and draw no supply current. When an
over–voltage condition occurs, the comparator will pro-
duce a gate trigger to the SCR, firing it, and thus clamping
the regulator input, as in the first case — to the SCRs
on–state drop of about 1 to 1.5 V, thereby protecting the
load.
 (a). SCR Across Input of Regulator
F
Vin
Cin
(b). SCR Across Output of Regulator
Vin REGULATOR
*NEEDED IF SUPPLY NOT CURRENT LIMITED
Figure 5.10. Typical Crowbar Configurations
Placing the crowbar across the input filter capacitors,
although effectively clamping the output, has several
disadvantages.
1. There is a stress placed on the input rectifiers during
the crowbarring short circuit time before the line fuse
opens, particularly under repeated operation.
2. Under low line conditions, the minimum short circuit
current can be of the same magnitude as the maximum
primary line current at high line, high load, making the
proper fuse selection a difficult choice.
3. The capacitive energy to be crowbarred (input and
output capacitor through rectifier D1) can be high.
When the SCR crowbar and the fuse are placed in the dc
load circuit, the above problems are minimized. If
crowbarring occurs due to an external transient on the line
and the regulator’s current limiting is working properly,
the SCR only has to crowbar the generally smaller output
filter capacitor and sustain the limited regulator current.
If the series pass devices were to fail (short), even with
current limiting or foldback disabled, the crowbarred
energy would generally be less than of the previous case.
This is due to the higher impedance of the shorted
regulator (due to emitter sharing and current sensing
resistors) relative to that of rectifier D1.
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D1
SERIES
REGULATOR
OVERVOLTAGE
SENSE vO
Co
*
vO
OVERVOLTAGE
SENSE
Fuse selection is much easier as a fault will now give a
greater percentage increase in dc load current than when
measuring transformer primary or secondary rms current.
The disadvantage, however, of placing the fuse in the dc
load is that there is no protection for the input rectifier,
capacitor, and transformer, if one of these components
were to fail (short). Secondly, the one fuse must protect
not only the load and regulator, but also have adequate
clearing time to protect the SCR, a situation which is not
always readily accomplished. The input circuitry can be
protected with the addition of a primary fuse or a circuit
breaker.
HOW MUCH ENERGY HAS TO BE
CROWBARRED?
This is dictated by the power supply filter capacitors,
which are a function of output current. A survey of several
linear power supply manufacturers showed the output
filter capacitor size to be from about 100 to 400
microfarads per ampere with about 200 µF/A being
typical. A 30 A regulator might therefore have a 6000 µF
output filter capacitor.
 Additionally, the usually much larger input filter
capacitor will have to be dumped if the regulator were to
short, although that energy to be dissipated will be
dependent on the total resistance in the circuit between
that capacitor and the SCR crowbar.
The charge to be crowbarred would be
Q + CV + IT,
the energy,
E + 1ń2 CV2
and the peak surge current
i pk + VRCT
When the SCR crowbars the capacitor, the current
waveform will be similar to that of Figure 5.11, with the
peak surge current, ipk, being a function of the total
impedance in the circuit (Figure 5.12) and will thus be
limited by the Equivalent Series Resistance (ESR) and
inductance (ESL) of the capacitor plus the dynamic
impedance of the SCR, any external current limiting
resistance, (and inductance) of the interconnecting wires
and circuit board conductors.
The ESR of computer grade capacitors, depending on
the capacitor size and working voltage, might vary from
10 to 1000 milliohms (mΩ). Those used in this study were
in the 25 to 50 mΩ range.
The dynamic impedance of the SCR (the slope of the
on–state voltage, on–state current curve), at high currents,
might be in the 10 to 20 mΩ range. As an example, from
the on–state characteristics of the MCR70, 35 A rms SCR,
the dynamic impedance is
(4.5 * 3.4)V
+ DDVIFF + (300
* 200)A + 100 A `11 mΩ.
rd 1.1 V
`
The interconnecting wire might offer an additional
5 mΩ (#20 solid copper wire 20 mΩ/ft) so that the total
circuit resistance, without additional current limiting,
might be in the 40 to 70 mΩ range. The circuit inductance
was considered low enough to ignore so far as ipk is
` `
concerned for this exercise, being in hundreds of nano-
henry range (ESL 3 nH, L wire 500 nH/ft).
However, di/dt will be affected by the inductance.
HOW MUCH ENERGY CAN THE CROWBAR SCR
SUSTAIN?
There are several factors which contribute to possible
SCR failures or degradation — the peak surge current,
di/dt, and a measure of the device’s energy capability, I2t.
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If the peak current and/or duration of the surge is large,
destruction of the device due to excessive dissipation can
occur. Obviously, the ipk can be reduced by inserting
additional impedance in the crowbar path, at an increase
in dump time. However, this time, which is a measure of
how long the overvoltage is present, should be within the
SOA of the load.
The energy stored in the capacitor being a constant for a
particular voltage would suggest that the I2t integral for
any limiting resistance is also a constant. In reality, this is
not the case as the thermal response of the device must be
taken into consideration. It has been shown that the
Ǹ
dissipation capability of a device varies as to the t for the
first tens of milliseconds of the thermal response and, in
effect, the measure of a device’s energy capability would
Ǹ
be closer to i2 t. This effect is subsequently illustrated in
the empirically derived ipk versus time derating curves
being a non–linear function. However, for comparison
with fuses, which are rated in I2t, the linear time base, “ t,”
will be used.
The di/dt of the current surge pulse is also a critical
parameter and should not exceed the device’s ratings
(typically about 200 A/µs for 50 A or less SCRs). The
magnitude of di/dt that the SCR can sustain is controlled
by the device construction and, to some extent, the gate
drive conditions. When the SCR gate region is driven on,
conduction across the junction starts in a small region and
progressively propagates across the total junction. Anode
current will initially be concentrated in this small
conducting area, causing high current densities which can
degrade and ultimately destroy the device. To minimize
this di/dt effect, the gate should be turned on hard and fast
such that the area turned on is initially maximized. This
can be accomplished with a gate current pulse approach-
ing five times the maximum specified continuous gate
current, Igt, and with a fast rise time (< 1 µs). The gate
current pulse width should be greater than the propagation
time; a figure of 10 µs minimum should satisfy most
SCRs with average current ratings under 50 A or so.
The wiring inductance alone is generally large enough
to limit the di/dt. Since most SCRs are good for over
100 A/µs, this effect is not too large a problem. However,
if the di/dt is found excessive, it can be reduced by placing
an inductance in the loop; but, again, this increases the
circuit’s response time to an overvoltage and the trade–off
should be considered.
 I

ipk

0
t = 0.5 ms/Div
50%

di/dt

10%

2.3 τ 5τ t
tW
10%

tW
0
t = 10 µs/Div
CROWBAR CURRENT TERMS I = 200 A/Div RS = 0
MCR69 VC = 30 V
C = 22,000 µF IGT = 200 mA

Figure 5.11. Typical SCR Crowbar Waveform

RW LW Since many SCR applications are for 60 Hz line

operation, the specified peak non–repetitive surge current
ITSM and circuit fusing I2t are based on 1/2 cycle (8.3 ms)
conditions. For some SCRs, a derating curve based on up
ESR RS to 60 or 100 cycles of operation is also published. This
rating, however, does not relate to crowbar applications.
To fully evaluate a crowbar system, the SCR must be
ESL LS characterized with the capacitor dump exponential surge
current pulse.
A simple test circuit for deriving this pulse is shown in
Figure 5.13, whereby a capacitor is charged through a
limiting resistor to the supply voltage, V, and then the
charge is dumped by the SCR device under test (DUT).
The SCR gate pulse can be varied in magnitude, pulse
RW, LW: INTERCONNECTING WIRE IMPEDANCE width, and rise time to produce the various IGT conditions.
RS, LS: CURRENT LIMITING IMPEDANCE
An estimate of the crowbar energy capability of the DUT
Figure 5.12. Circuit Elements Affecting SCR
is determined by first dumping the capacitor charged to
Surge Current low voltage and then progressively increasing the voltage
until the DUT fails. This is repeated for several devices to
establish an average and minimum value of the failure
points cluster.

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 100

DUT
V 22,000 µF 50
H.P. 214A
PULSE
GENERATOR
EXTERNAL
TRIGGER

Figure 5.13

This procedure was used to test several different SCRs
of which the following Table 5.4 describes several of the
pertinent energy specifications and also the measured
crowbar surge current at the point of device failure.
This one–shot destruct test was run with a gate current
of five IGT(MAX) and a 22,000 µF capacitor whose ESR
produced the exponentially decaying current pulse about
1.5 ms wide at its 10% point. Based on an appropriate
derating, ten devices of each line where then successfully
tested under the following conditions.
Device VC ipk
2N6397 12 V 250 A
2N6507 30 V 800 A
To determine the effect of gate drive on the SCRs, three
devices from each line were characterized at non–destruct
levels using three different capacitors (200, 6,000, and
22,000 µF), three different capacitor voltages (10, 20, and
30 V), and three different gate drives (IGT(MAX),
5 IGT(MAX), and a ramp IGT(MAX) with a di/dt of
about 1 mA/µs). Due to its energy limitations, the MCR68
was tested with only 10 V across the larger capacitors.
The slow ramp, IGT, was used to simulate overvoltage
sense applications where the gate trigger rise time can be
slow such as with a coupling zener diode.
No difference in SCR current characteristics were noted
with the different gate current drive conditions; the peak
currents were a function of capacitor voltage and circuit
impedance, the fall times related to RTC, and the rise
times, tr, and di/dt, were more circuit dependent (wiring
inductance) and less device dependent (SCR turn–on
time, ton). Since the wiring inductance limits, tr, the
t
effect of various IGTs was masked, resulting in virtually
1.5 ms identical waveforms.
1.5 ms The derated surge current, derived from a single (or low
number) pulse test, does not truly reflect what a power
supply crowbar SCR might have to see over the life of the
supply. Life testing over many cycles have to be
performed; thus, the circuit described in Appendix IV was
developed. This life test fixture can simultaneously test
ten SCRs under various crowbar energy and gate drive
conditions.

Table 5.4. Specified and Measured Current Characteristics of Three SCRs

Measured Crowbar
Maximum Specified Values
Surge Current Ipk
Device Case
IT(rms) IT(AV) ITSM* I2t IGT(Max) Min Max Ave
(A) (A) (A) (A2s) (mA) (A) (A) (A)
2N6397 TO–220 12 8 100 40 30 380 750 480
2N6507 TO–220 25 16 300 375 40 1050 1250 1100
* ITSM = Peak Non–Repetitive Surge Current, 1/2 cycle sine wave, 8.3 ms.

Each of the illustrated SCRs of Figure 5.14(a) were tested
with as many as four limiting resistors (0, 50, 100, and
240 mΩ) and run for 1000 cycles at a nominal energy level.
If no failures occurred, the peak current was progressively
increased until a failure(s) resulted. Then the current was
reduced by 10% and ten new devices were tested for 2000
cycles (about six hours at 350 cycles/hour). If this test
proved successful, the data was further derated by 20% and
plotted as shown on log–log paper with a slope of – 1/4. This
theoretical slope, due to the I2 Ǹt one–dimensional heat–flow
relationship (see Appendix VI), closely follows the empiri-
cal results. Of particular interest is that although the peak
current increases with decreasing time, as expected, the I2t
actually decreases.

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 C = 8400 µF TA = 25°C Ipk 1
ESR ≈ 25 mΩ N = 2000 PULSES N = 2000 PULSES
p

NORMALIZED PEAK SURGE CURRENT

VC 60 V f = 3 PULSES/MIN.
Ipk , PEAK CURRENT (AMPS)

3000 0.8
tW 5 TC
1000
2N6507 0.6
300
2N6397
100 0.4

30
0.2
0 25 50 75 100 125
0.1 0.5 1 5 10 50 100
TC, AMBIENT TEMPERATURE (°C)
tW, BASE PULSE WIDTH (ms)

Figure 5.14(a). Peak Surge Current versus Pulse Width (b). Peak Surge Current versus Ambient Temperature

Figure 5.14(b) shows the effect of elevated ambient Once an overvoltage is detected and the crowbar is
temperature on the peak current capability of the enabled, in addition to sustaining the peak current, the
illustrated SCRs. SCR must handle the regulator short–circuit current for
the time it takes to open the fuse.
FUSE CHARACTERISTICS Thus, all three elements are tied together — the load
can take just so much overvoltage (over–energy) and the
SCRs, like rectifiers, are generally rated in terms of crowbar SCR must repeatedly sustain for the life of the
average forward current, IT(AV), due to their half–wave equipment an rms equivalent current pulse that lasts for
operation. Additionally, an rms forward current, IT(rms), a the fuse response time.
peak forward surge current, ITSM, and a circuit–fusing It would seem that the matching of the fuse to the SCR
energy limit, I2t, may be shown. However, these specifi- would be straightforward — simply ensure that the fuse
cations, which are based one–half cycle 60 Hz operation, rms current rating never exceed the SCR rms current
are not related to the crowbar current pulse and some rating (Figure 5.15), but still be sufficient to handle
means must be established to define their relationship. steady–state and normal overload currents. The more
Also, fuses which must ultimately match the SCR and the exact relationship would involve the energy dissipated in
load, are rated in rms currents. the system ∫ I2Rdt, which on a comparative basis, can be
The crowbar energy curves are based on an exponen- reduced to I2t. Thus, the “let–through” I2t of the fuse
tially decaying surge current waveform. This can be should not exceed I2t capability of the SCR under all
converted* to Irms by the equation. operating conditions. These conditions are many, consist-
I rms + 0.316 ipk ing of “available fault current,” power factor of the load,
supply voltage, supply frequency, ambient temperature,
which now allows relating the SCR to the fuse. and various fuse factors affecting the I2t.
*See Appendix V There has been much detailed information published on
fuse characteristics and, rather than repeat the text which
The logic load has its own overvoltage SOA as a would take many pages, the reader is referred to those
function of time (Figure 5.9). The crowbar SCR must sources. Instead, the fuse basics will be defined and an
clamp the overvoltage within a specified time, and still be example of matching the fuse to the SCR will be shown.
within its own energy rating; thus, the series–limiting In addition to interrupting high current, the fuse should
resistance, RS, in the crowbar path must satisfy both the limit the current, thermal energy, and overvoltage due to
load and SCR energy limitations. The overvoltage the high current. Figure 5.16 illustrates the condition of
response time is set by the total limitations. The the fuse at the moment the over–current starts. The peak
overvoltage response time is set by the total limiting let–through current can be assumed triangular in shape for
resistance and dumped capacitor(s) time constant. Since a first–order approximation, lasting for the clearing time
the SOA of the TTL used in this exercise was derived by a of the fuse. This time consists of the melting or pre–arcing
rectangular overvoltage pulse (in effect, over–energy), the time and the arcing time. The melting time is an inverse
energy equivalent of the real–world exponentially falling function of over–current and, at the time that the fuse
voltage waveform must be made. An approximation can element is opened, an arc will be formed causing the peak
be made by using an equivalent rectangular pulse of 0.7 arc voltage. This arc voltage is both fuse and circuit
times the peak power and 0.7 times the base time. dependent and under certain conditions can exceed the

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peak line voltage, a condition the user should ensure does
not overstress the electronics.
The available short–circuit current is the maximum
current the circuit is capable of delivering and is generally
limited by the input transformer copper loss and reactance
when the crowbar SCR is placed at the input to the
regulator or the regulator current limiting when placed at
the output. For a fuse to safely protect the circuit, it should
limit the peak let–through current and clear the fault in a
short time, usually less than 10 ms.
CURRENT I rms (LOG)
Two other useful curves, the total clearing I2t character-
istic and the peak let–through current IPLT characteristic,
are illustrated in Figures 5.17 and 5.18 respectively. Some
vendors also show total clearing time curves (overlayed
on Figure 5.17 as dotted lines) which then allows direct
comparison with the SCR energy limits. When this
clearing time information is not shown, then the designer
should determine the IPLT and I2t from the respective
curves and then solve for the clearing time from the
approximate equation relating these two parameters.
Assuming a triangular waveform for IPLT, the total
clearing time, tc, would then approximately be
2
tc ≈ 3 I t
I PLT2

SCR CHARACTERISTICS
Once tc of the fuse is known, the comparison with the
SCR can readily be made. As long as the I2t of the fuse is
FUSE less than the I2t of the SCR, the SCR is protected. It
CHARACTERISTIC should be pointed out that these calculations are predi-
Irms (max)
cated on a known value of available fault current. By
inspection of Figure 5.18, it can be seen that IPLT can vary
LIMITED BY FUSE
greatly with available fault current, which could have a
10 ms 4 HRS
marked effect on the degree of protection. Also, the
TIME t (LOG)
illustrated curves are for particular operating conditions;
the curves will vary somewhat with applied voltage and
Figure 5.15. Time–Current Characteristic Curves
frequency, initial loading, load power factor, and ambient
of a Crowbar SCR and a Fuse
temperature. Therefore, the reader is referred to the
manufacturer’s data sheet in those cases where extrapola-
tion will be required for other operating conditions. The
FUSE VOLTAGE PEAK ARC VOLTAGE final proof is obtained by testing the fuse in the actual
circuit under worst–case conditions.
SUPPLY
VOLTAGE CROWBAR EXAMPLE

INSTANT OF SHORT To illustrate the proper matching of the crowbar SCR to

MELTING TIME
ARCING TIME the load and the fuse, consider the following example. A
CLEARING TIME 50 A TTL load, powered by a 60 A current limited series
PEAK ASYMMETRICAL regulator, has to be protected from transients on the
FAULT CURRENT
FUSE CURRENT supply bus by crowbarring the regulator output. The
output filter capacitor of 10,000 µF (200 µF/A) contrib-
PEAK FUSE CURRENT
utes most of the energy to be crowbarred (the input
IPLT capacitor is current limited by the regulator). The
transients can reach 18 V for periods 100 ms.
Referring to Figure 5.9, it is seen that this transient
exceeds the empirically derived SOA. To ensure safe
Figure 5.16. Typical Fuse Timing Waveforms During
operation, the overvoltage transient must be crowbarred
Short Circuit
within 5 ms. Since the TTL SOA is based on a rectangular
power pulse even though plotted in terms of voltage, the
Fuse manufacturers publish several curves for charac- equivalent crowbarred energy pulse should also be
terizing their products. The current–time plot, which derived. Thus, the exponentially decaying voltage wave-
describes current versus melting time (minimum time form should be multiplied by the exponentially decaying
being 10 ms), is used in general industrial applications, current to result in an energy waveform proportional to
but is not adequate for protecting semiconductors where e–2x. The rectangular equivalent will have to be deter-
the clearing time must be in the subcycle range. Where mined and then compared with the TTL SOA. However,
protection is required for normal multicycle overloads, for simplicity, by using the crowbarred exponential
this curve is useful. waveform, a conservative rating will result.

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 4
SF 13X SERIES
130 Vrms, 60 Hz
TA = 25°C
p 15%
20 A
POWER FACTOR
102
15 A

LET-THROUGH I2t (A2S)

4

10 A

10

5 ms 2 ms 1.5 ms TOTAL CLEARING TIME

1
10 4 102 4 103 4 104 4 105
AVAILABLE FAULT CURRENT (SYMMETRICAL rms AMPS)

Figure 5.17. Maximum Clearing I2t Characteristics for 10 to 20 A Fuses

To protect the SCR, a fuse must be chosen that will If a crowbar discharge time of 3 ms were chosen, it
open before the SCR’s I2t is exceeded, the current being would not only be within the rectangular pulsed SOA, but
the regulator limiting current which will also be the also be well within the derived equivalent rectangular
available fault current to the fuse. model of the exponential waveform. It would also require
The fuse could be eliminated by using a 60 A SCR, but about 1.3 time constants for the overvoltage to decay from
the cost versus convenience trade–off of not replacing the 18 V to 5 V; thus, the RC time constant would be 3 ms/1.3
fuse is not warranted for this example. A second fuse or or 2.3 ms.
circuit breaker will protect the rectifiers and regulator for The limiting resistance, RS would simply be
internal faults (shorts), but its selection, which is based on
the respective energy limits of those components, is not
RS + 10,2.3000msmF + 0.23 W ` 0.2 W
part of this exercise.
INSTANTANEOUS PEAK LET-THROUGH CURRENT (AMPS

103 20 A

MAX PEAK AVAILABLE CURRENT

4
(2.35 x SYMMETRICAL rms AMPERES)
15 A
10 A
102

4
SF 13X SERIES
130 Vrms, 60 Hz
POWER FACTOR p 15%
10
10 4 102 4 103 4 104 4 105
AVAILABLE FAULT CURRENT (SYMMETRICAL rms AMPS)

Figure 5.18. Peak Let–Through Current versus Fault Current for 10 to 20 A Fuses

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Since the capacitor quickly charges up to the over–voltages I2t rating is not specified, but can be calculated from the
VCC1 of 18 V, the peak capacitor discharge current would be equation
2
I pk + VRCC1
S
+ 0.2
18 V + 90 A
W I 2t + (ITSM
2
)
t+
(300 A)2
2
(8.3 ms) + 375 A 2s

The rms current equivalent for this exponentially decay- Extrapolating to 6 ms results in about 318 A2s, an I2t
ing pulse would be rating much greater than the circuit 24 A2s value.

I rms + 0.316 Ipk + 0.316(90) + 28.4 A rms
Now referring to the SCR peak current energy curves
(Figure 5.14), it is seen that the MCR68 can sustain 210 A
peak for a base time of 3 ms. This 12 A SCR must also
sustain the 60 A regulator limited current for the time
required to open the fuse. The MCR68 has a specified
peak forward surge current rating of 100 A (1/2 cycle, sine
wave, 60 Hz, non–repetitive) and a circuit fusing rating of
40 A2s.
The non–repetitive rating implies that the device can
sustain 100 occurrences of this 1/2 cycle surge over the
life of the device; the SCR crowbar surge current curves
were based on 2000 cycles.
For the 3 ms time frame, the I12t1 for the exponential
waveform is
The circuit designer can then make the cost/perfor-
mance trade–offs.
All of these ratings are predicated on the fuse operating
within 6 ms.
With an available fault current of 60 A, Figure 5.17
shows that a 10 A (SF13X series) fuse will have a
let–through I2t of about 10 A2s and a total clearing time of
about 6 ms, satisfying the SCR requirements, that is,
I 2t fuset I2t SCR
tcp 6 ms
Figure 5.18 illustrates that for the same conditions,
instantaneous peak let–through current of about 70 A
would result. For fuse manufacturers that don’t show the
clearing time information, the approximate time can be
calculated from the triangular model, as follows

I1 t1
2
+ (28.4 A)2(3 ms) + 2.4 A 2s
tc + I3 I2t2 + (70)
3(10)
2
+ 6.1 ms
PLT
Assuming that the fuse will open within 6 ms, the The fuse is now matched to the SCR which is matched to
approximate energy that the SCR must sustain would be the logic load. Other types of loads can be similarly
60 A for an additional 3 ms. By superposition, this would matched, if the load energy characteristics are known.
amount to
CHARACTERIZING SWITCHES AS LINE–TYPE
2
I2 t2 + (60 A)2(6 ms) + 21.6 A2s MODULATORS

which , when added to the exponential energy, would
result in 24 A2.
The MCR68 has a 40 A2s rating based on a 1/2 cycle
of 8.3 ms. Due to the one–dimensional heat flow in the
device, the energy capability is not linearly related to
Ǹ
time, but varies as to the t. Therefore, with a 6 ms
1/2–cycle sine wave, the 40 A2t rating would now
decrease to approximately (see Appendix VI for
In the past, hydrogen thyratrons have been used
extensively as discharge switches for line type modula-
tors. In general, such devices have been highly satisfac-
tory from an electrical performance standpoint, but they
have some major drawbacks including relatively large
size and weight, low efficiency (due to filament power
requirements), and short life expectancy compared with
semiconductor devices, now can be eliminated through

ǒǓ
the use of silicon controlled rectifiers.
derivation).
A line type modulator is a modulator whose output–
ń
1 2 pulse characteristics are determined by a lumped–
2
I2 t2 + 2
I1 t1
t2
t1
constant transmission line (pulse forming network) and by

ǒ Ǔń
the proper match of the line impedance (PFN) to the load

+ 40 A2s
1 2 impedance.
6 ms
8.3 ms A switch for this type modulator should only initiate
+ 34 A2s conduction and should have no effect on pulse character-
istics. This is in contrast to a hard switch modulator where
output pulse characteristics are determined by the “hard”
Although the 1/2 cycle extrapolated rating is greater than relationship of grid (base) control of conduction through a
the actual crowbar energy, it is only characterized for 100 vacuum tube (transistor) switch.
cycles of operation. Referring to the schematic (Figure 5.25), when the
To ensure 2000 cycles of operation, at a somewhat power supply is first turned on, no charge exists in the
higher cost, the 25 A MCR69 could be chosen. Its PFN, and energy is transferred from the power supply to
exponential peak current capability, at 3 ms, is about the PFN via the resonant circuit comprising the charging
560 A and has a specified ITSM of 300 A for 8.3 ms. The choke and PFN capacitors. At the time that the voltage

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across the PFN capacitors reaches twice the power supply
voltage, current through the charging choke tries to
reverse and the power supply is disconnected due to the
back biased impedance of the hold–off diode. If we
assume this diode to be perfect, the energy remains stored
in the PFN until the discharge switch is triggered to its on
state. When this occurs, assuming that the pulse trans-
former has been designed to match the load impedance to
the PFN impedance, all energy stored in the PFN
reactance will be transferred to the load if we neglect
switch losses. Upon completion of the transfer of energy
the switch must return to its off condition before allowing
transfer of energy once again from the power supply to the
PFN storage element.
OPTIMUM SWITCH CHARACTERISTICS
FORWARD BREAKOVER VOLTAGE
Device manufacturers normally apply the variable–
amplitude output of a half–wave rectifier across the SCR.
Thus, forward voltage is applied to the device for only a
half cycle and the rated voltage is applied only as an ac
peak. While this produces a satisfactory rating for ac
applications, it does not hold for dc.
An estimated 90% of devices tested for minimum
breakover voltage (VBO) in a dc circuit will not meet the
data sheet performance specifications. A switch designed
for the pulse modulator application should therefore
specify a minimum continuous forward breakover voltage
at rated maximum leakage current for maximum device
temperatures.
THE OFF SWITCH
The maximum forward leakage current of the SCR
must be limited to a low value at maximum device
temperature. During the period of device nonconduction it
is desired that the switch offer an off impedance in the
range of megohms to hundreds of megohms. This is
required for two reasons: (1) to prevent diminishing the
efficiency of recharge by an effective shunt path across
the PFN, and (2) to prevent the bleeding off of PFN charge
during the interpulse period. This second factor is
especially important in the design of radar tansponders
wherein the period between interrogations is variable.
Change of the PFN voltage during the interpulse period
could result in frequency shift, pulse instabilities, and loss
of power from the transmitter being modulated.
THE ON SWITCH
At present, SCR design is more limited in the
achievable maximum forward sustaining voltage than in
the current that the device will conduct. For this reason
modulators utilizing SCRs can be operated at lower
impedance levels than comparable thyratron circuits of
yesterday. It is not uncommon for the characteristic
impedance of the pulse forming network to be in the order
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of 5 to 10 ohms or less. Operating the SCR at higher
current to switch the same equivalent pulse power as a
thyratron requires the SCR on impedance to be much
lower so that the I2R loss is a reasonable value, in order to
maintain circuit efficiency. Low switch loss, moreover, is
mandatory because internal power dissipation can be
directly translated into junction–temperature–rise and
associated leakage current increase which, if excessive,
could result in thermal runaway.
TURN–ON TIME
In radar circuits the pulse–power handling capability of
an SCR, rather than the normally specified average–
power capability, is of primary importance.
For short pulses at high PRFs the major portion of
semiconductor dissipation occurs during the initial
turn–on during the time that the anode rises from its
forward leakage value to its maximum value. It is
necessary, therefore, that turn–on time be as short as
possible to prevent excessive power dissipation.
The function of radar is to provide distance information
measured as a function of time. It is important, therefore,
that any delay introduced by a component be fixed in
relation to some variable parameter such as signal
strength or temperature. For radar pulse modulator
applications, a minimal delay variation versus tempera-
ture is required and any such variation must be repetitive
from SCR to SCR, in production lots, so that adequate
circuit compensation may be provided.
PULSE GATE CURRENT TO FIRE
The time of delay, the time of rise, and the delay
variation versus temperature associated with SCR turn–on
are functions of the gate triggering current available and
the trigger pulse duration. In order to predict pulse circuit
operation of the SCR, the pulse gate current required to
turn the device on when switching the low–impedance
modulator should be specified and the limits of turn–on–
time variation for the specified pulse trigger current and
collector load should be given at the high and low
operating temperature extremes.
RECOVERY TIME
After the cessation of forward conducting current in the
on device, a time of SCR circuit isolation must be
provided to allow the semiconductor to return to its off
state. Recovery time cannot be given as an independent
parameter of device operation, but must include factors as
determined by the external circuit, such as: (1) pulse
current and rate of decay; (2) availability of an inverse
voltage immediately following pulse–current conduction;
(3) level of base bias following pulse current conduction;
(4) rate of rise of reapplied positive voltage and its
amplitude in relation to SCR breakover voltage; and
(5) maximum circuit ambient temperature.
 In the reverse direction the controlled rectifier behaves
like a conventional silicon diode. Under worst circuit
conditions, if an inverse voltage is generated through the
existence of a load short circuit, the current available will
be limited only by the impedance of the pulse forming
network and SCR inverse characteristics. The reverse
current is able to sweep out some of the carriers from the
SCR junctions. Intentional design of the load impedance
to something less than the network impedance allows
development of an inverse voltage across the SCR
immediately after pulse conduction, enhancing switch
turn–off time. Careful use of a fast clamp diode in series
with a fast zener diode, the two in shunt across the SCR,
allows application of a safe value of circuit–inverse–volt-
age without preventing the initial useful reverse current.
Availability of a negative base–bias following pulse
current conduction provides a similar enhancement of
switch turn–off time.
If removal of carriers from the SCR junction enables a
faster switch recovery time, then, conversely, operation of
the SCR at high temperatures with large forward currents
and with slow rate of current decay all increase device
recovery time.
HOLDING CURRENT
One of the anomalies that exist in the design of a pulse
SCR is the requirement for a high holding current. This
need can be determined by examining the isolation
component that disconnects the power supply from the
discharge circuit during the time that PFN energy is being
transferred to the transmitter and during the recovery time
of the discharge switch. An inductance resonating with
the PFN capacitance at twice the time of recharge is
normally used for power supply isolation. Resonant
charging restricts the initial flow of current from the
power supply, thereby maximizing the time at which
power supply current flow will exceed the holding current
of the SCR. If the PFN recharge current from the power
supply exceeds the holding current of the SCR before it
has recovered, the SCR will again conduct without the
application of a trigger pulse. As a result continuous
conduction occurs from the power supply through the low
impedance path of the charging choke and on switch. This
lock–on condition can completely disable the equipment
employing the SCR switch.
The charging current passed by the inductance is given
ȡȧ ȣȧ
as (the PFN inductance is considered negligible):
* take advantage of this fact in restricting the inverse–volt-
2ǸL c C n
T r 2t
ic(t) +
* Vn(0) cos
ǸLcńCn
E bb
Ȣ Ȥ
2ǸL c C n
Tr
sin
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Where
Ebb = power supply voltage
Vn(0) = 0 volts if the PFN employs a clamp diode or is
matched to the load
Tr = time of resonant recharge and is usually equal
to 1
PRF
Lc = value of charging inductance
Cn = value of total PFN capacity
For a given radar pulse modulator design, the values of
power supply voltage, time of resonant recharge, charging
choke inductance, and PFN capacitance are established. If
the time (t) represents the recovery time of the SCR being
used as the discharge switch, ic then represents the
minimum value of holding current required by the SCR to
prevent power supply lock–on. Conversely, if the modula-
tor design is about an existing SCR where holding current,
recovery time, and forward breakover voltage are known,
the charge parameters can be derived by rewriting the
ȡȧ ȣȧ
above formula as follows:
*
Ǹ
T r 2(recovery time)
iH +
* Vn(0) cos
ǸLcńCn
V BO 2 Lc Cn
Ȣ sin
2ǸL c C n
Tr
Ȥ
The designer may find that for the chosen SCR the
desired characteristics of modulator pulse width and pulse
repetition frequency are not obtainable.
One means of increasing the effective holding current
of an SCR is for the semiconductor to exhibit some
turn–off gain characteristic for the residual current flow at
the end of the modulator pulse. The circuit designer then
can provide turn–off base current, making the SCR more
effective as a pulse circuit element.
THE SCR AS A UNIDIRECTIONAL SWITCH
When triggered to its on state, the SCR, like the
hydrogen thyratron, is capable of conducting current in
one direction. A load short circuit could result in an
inverse voltage across the SCR due to the reflection of
voltage from the pulse forming network. The circuit
designer may wish to provide an intentional load–to–PFN
mismatch such that some inverse voltage is generated
across the SCR to enhance its turn–off characteristics.
Nevertheless, since the normal circuit application is
unidirectional, the semiconductor device designer could
age rating that the SCR must withstand. The circuit
designer, in turn, can accommodate this lack of peak–
inverse–voltage rating by use of a suitable diode clamp
across the PFN or across the SCR.
SCRs TESTS FOR PULSE CIRCUIT
APPLICATION
The suitability for pulse circuit applications of SCRs
not specifically characterized for such purposes can be
determined from measurements carried out with relatively
simple test circuits under controlled conditions. Applica-
ble test circuits and procedures are outlined in the
following section.
FORWARD BLOCKING VOLTAGE AND LEAKAGE
CURRENT
Mount the SCRs to a heat sink and connect the units to
be tested as shown in Figure 5.21. Place the assembly in
an oven and stabilize at maximum SCR rated tempera-
ture. Turn on the power supply and raise the voltage to
rated VBO. Allow units to remain with the voltage applied
for minimum of four hours. At the end of the temperature
soak, determine if any units exhibit thermal runaway by
checking for blown fuses (without removing the power).
Reject any units which have blown circuit fuses. The
forward leakage current, ILF, of the remaining units may
be calculated after measuring the voltage VL, across
resistor R2. Any units with a leakage current greater than
manufacturer’s rating should be rejected.
Figure 5.20. Vertical Set to 4 cm, Horizontal 0.2 µs/cm.
Detected RF Magnetron Pulse
TURN–ON TIME, VARIATION AND ON IMPEDANCE
This circuit assumes that the pulse gate current required
to switch a given modulator load current is specified by
the manufacturer or that the designer is able to specify the
operating conditions. Typical operating values might be:
Time of trigger pulse t = 1 µs
Pulse gate current IG = 200 mA
Forward blocking voltage VBO = 400 V
Load current ILoad = 30 A
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To measure turn–on time using a Tektronix 545
oscilloscope (or equivalent) with a dual trace type CA
plug–in, connect probes of Channels A and B to Test
Points A and B. Place the Mode selector switch in the
Added Algebraically position and the Channel B Polarity
switch in the Inverted position. Adjust the HR212A pulse
generator to give a positive pulse 1 µs wide (100 pps) as
viewed at Test Point A. Adjust the amplitude of the
“added” voltage across the 100–ohm base resistor for the
specified pulse gate current (200 mA in this example).
Switch the Mode selector knob to the alternate position.
Connect Channel A to Test Point D. Leave the oscillo-
scope probe, Channel B, at Test Point B, thereby
displaying the input trigger waveform. Measure the time
between the 50 percent voltage amplitudes of the two
waveforms. This is the Turn–On Time (tD + tR).
To measure turn–on time versus temperature, place the
device to be tested on a suitable heat sink and place the
assembly in a temperature chamber. Stabilize the chamber
at minimum rated (cold) temperature. Repeat the above
measurements. Raise the chamber temperature to maxi-
mum rated (hot) temperature and stabilize. Repeat the
measurements above.
+
REGULATED
POWER VL R2
SUPPLY –
1/16 A
ANODE ADDITIONAL UNITS
MAY BE
GATE CATHODE CONNECTED IN
PARALLEL
R1
Figure 5.21. Test Setup for SCR Forward Blocking
Voltage and Leakage Current Measurements
RESISTOR R1 IS USED ONLY IF MANUFACTURER CALLS FOR
BIAS RESISTOR BETWEEN GATE AND CATHODE. RESISTOR
R2 CAN HAVE ANY SMALL VALUE WHICH, WHEN MULTIPLIED
BY MAXIMUM ALLOWABLE LEAKAGE CURRENT, WILL
PROVIDE A CONVENIENT READING OF VOLTAGE VL.
 To measure the turn–on impedance for the specified
current load, the on impedance can be measured as an
SCR forward voltage drop. The point in time of
measurement shall be half the output pulse width. For a
1 µs output pulse, the measurement procedure would be:
Connect the oscilloscope probe, Channel B, to Point D
shown in Figure 5.22. Use the oscilloscope controls
Time/CM and Multiplier to a setting of 0.5 µs per
centimeter or faster. With the Amplitude Control set to
view 100 volts per centimeter (to prevent amplifier
overloading) measure the amplitude of the voltage drop,
VF, across the SCR 0.5 µs after the PFN voltage waveform
has dropped to half amplitude. It may be necessary to
check ground reference several times during this test to
provide the needed accuracy of measurement.
E = VBO VBO
V BO
2 2
0V
100
IC = AS SPECIFIED k t = AS SPECIFIED
t = AS SPECIFIED
A B
D
100
zO = R
1:1
HP
212A
51
Figure 5.22. Suggested Test Circuit for SCR “On”
Measurements
HOLDING CURRENT
The SCR holding current can be measured with or
without a gate turn–off current, according to the position
of switch S2. The ON Semiconductor Trigger Pulse
Generator is a transistor circuit capable of generating a
1.5 µs turn–on pulse followed by a variable–duration
turn–off pulse. Measurements should be made at the
maximum expected temperature of operation. Resistor R1
should be chosen to allow an initial magnitude of current
flow at the device pulse current rating.
To measure holding current, connect the SCRs under
test as illustrated in Figure 5.23. Place SCRs in oven and
stabilize at maximum expected operating temperature.
View the waveform across R1 by connecting the oscillo-
scope probe (Tektronix 2465) Channel A to Point A, and
Channel B to Point B. Place the Mode Selector switch in
the Added Algebraically position. Place the Polarity
swich of Channel B in the Inverted position. Adjust both
Volts/CM switches to the same scale factor, making sure
that each Variable knob is in its Calibrated position.
Adjust pulse generator for a positive pulse, 1 µs wide, and
1,000 pps pulse repetition frequency. Adjust power supply
voltage to rated VBO. Adjust input pulse amplitude until
unit fully triggers. Measure amplitude of voltage drop
across R1, V(A – B), and calculate holding current in mA
from the equation
+ V(AR1* B) ) 100VBOk W
1
mA
Von
Any unit which turns on but does not turn off has a
holding current of less than
V BO V
C
100 k W
+ 2:1
V BO The approximate voltage setting to view the amplitude
R
LOAD of the holding current will be 10 or 20 volts per
WHERE ILOAD = centimeter. The approximate sweep speed will be 2 to
AS SPECIFIED
5 µs per centimeter. These settings will, of course, vary,
depending upon the holding current of the unit under test.
SCR recovery time is greatly dependent upon the circuit
in which the device is used. However, any test of SCR
recovery time should suffice to compare devices of
various manufacturers, as long as the test procedure is
standardized. Further evaluation of the selected devices
could be made in an actual modulator circuit tester
wherein techniques conducive to SCR turn–off are used.
The circuit setup shown in Figures 5.24 and 5.25 can be
employed for such tests. A slight load to PFN mismatch is
called for to generate an inverse voltage across the SCR at
the termination of the output pulse. An SCR gate turn–off
pulse is used. The recharge component is a charging
choke, providing optimized conditions of reapplied
voltage to the PFN (and across the SCR). Adequate heat
sinking of the SCR should be provided.
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 HARRISON 2W
800 A B A
P.S. 100k
+ 12 – 12 + TIME AT WHICH TO MEASURE IN
R1 R3
S1A

ON
SEMI– ANODE
CONDUCTOR C1
HP212 TRIGGER S1B
PULSE S2 7500 fd.
PULSE GATE
GEN. GEN
REGULATED IH
CATHODE POWER
R2 SUPPLY
VOLTAGE LEVEL FROM
R4 WHICH TO CALCULATE
51 Ω HOLDING CURRENT
–

NOTE: ADDITIONAL UNITS MAY BE TESTED BY SWITCHING THE

ANODE AND GATE CONNECTIONS TO SIMILARLY
MOUNTED SCRs. SHORT LEAD LENGTHS ARE DESIRABLE.

Figure 5.23. Test Setup for Measuring Holding Current

REGULATED
POWER
SUPPLY

CHARGING
CHOKE

HARRISON B
HOLD OFF
800 A
DIODE
+ 12 – 12
PFN
A
zO q RLOAD
ON
SEMI– ANODE
CONDUCTOR C
HP212A TRIGGER
PULSE PULSE
GATE
GEN GEN CATHODE RLOAD
R

Figure 5.24. Modulator Circuit for SCR Tests

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 CHARGE
LOAD
IMPEDANCE

POWER ENERGY DISC

SUPPLY STORE SWITCH

BLOCK DIAGRAM;
CHARGING CHOKE
HOLD OFF DIODE
PULSE TRANSFORMER

PFN LOAD
Es

TRIGGER SCR
IN

SIMPLIFIED SCHEMATIC

Figure 5.25. Radar Modulator, Resonant Line Type

PARALLEL CONNECTED SCRs be at least two or three times the IGT(MAX) specification
on the data sheet and ideally close to, but never
When an application requires current capability in
exceeding, the maximum specified gate power dissipation
excess of a single economical SCR, it can be worthwhile
or peak current. Adequate gate current is necessary for
to consider paralleling two or more devices. To help
rapid turn–on of all the parallel SCRs and to ensure
determine if two or more SCRs in parallel are more cost
simultaneous turn–on without excessive current crowding
effective than one high current SCR, some of the
p
across any of the individual die. The rise time of the gate
advantages and disadvantages are listed for parallel
drive pulse should be fast, ideally 100 ns. Each gate
devices.
should be driven from a good current source and through
Advantages its own resistor, even if transformer drive is used. Gate
1. Less expensive to purchase pulse width requirements vary but should be of sufficient
2. Less expensive to mount width to ensure simultaneous turn–on and last well
3. Less expensive to replace, in case of failure beyond the turn–on delay of the slowest device, as well as
4. Ease of mounting beyond the time required for latching of all devices.
5. Ease of isolation from sink Ideally, gate current would flow for the entire conduction
period to ensure latching under all operating conditions.
Disadvantages
1. Increased SCR count With low voltage switching, which includes conduction
2. Selected or matched devices angles near 180° and near zero degrees, the gate drive
3. Increased component count requirements can be more critical and special emphasis
4. Greater R & D effort may be required of gate pulse amplitude and width.

There are several factors to keep in mind in paralleling PARAMETER MATCHING

and many are pertinent for single SCR operations as well.
GATE DRIVE
The required gate current (IGT) amplitude can vary
greatly and can depend upon SCR type and load being
switched. As a general rule for parallel SCRs, IGT should
For reliable current sharing with parallel SCRs, there
are certain device parameters that should be matched or
held within close tolerances. The degree of matching
required varies and can be affected by type of load
(resistive, inductive, incandescent lamp or phase con-
trolled loads) being switched.

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 The most common device parameters that can effect turned on, probably causing failure from over–current and
current sharing are: excessive junction temperature.

1. td — turn–on delay time Table 5.5. MCR12D Turn–On Delay, Rise Time and
2. tr — turn–on rise time of anode current Minimum Forward Anode Voltage For Turn–On
3. VA(MIN) — minimum anode voltage at which device Turn–On Delay and Rise Time
Minimum Anode
will turn on Voltage For
Off–State Voltage = 8 V Peak
4. Static on–state voltage and current RL = 10 Ohms, IA ^6.5 A Peak
Turn–On Off–State
Voltage = 4 V Peak
5. IL — Latching current Device IG = 100 mA (PW = 100 µs)
RL = 0.5 Ohm
IA = 5A
Conduction Angle 90 Degrees
The four parameters shown in Table 5.6 were measured IG = 100 mA
with a curve tracer and are: td(ns) tr(µs) (Volts)
IL, latching current; VTM, on–state voltage; IGT and
1 35 0.80 0.70
VGT, minimum gate current and voltage for turn on.
2 38 0.95 0.81
Of the four parameters, IL and VTM can greatly affect 3 45 1 0.75
current sharing. 4 44 1 0.75
The latching current of each SCR is important at 5 44 0.90 0.75
turn–on to ensure each device turns on and will stay on for 6 43 0.85 0.75
7 38 1.30 0.75
the entire conduction period. On–state voltage determines
8 38 1.25 0.70
how well the SCRs share current when cathode ballasting 9 38 1 0.75
is not used. 10 37 0.82 0.70
Table 5.5 gives turn–on delay time (td) and turn–on rise
time (tr) of the anode–cathode voltage and the minimum
forward anode voltage for turn–on. These parameters OFF–STATE
were measured in the circuits shown in Figures 5.28 and
ANODE–CATHODE
5.29. One SCR at a time was used in the circuit shown in VOLTAGE 0.2 V/Div
Figure 5.28.
ON–STATE
Turn–on delay on twenty–five SCRs was measured
(only ten are shown in Table 5.5) and they could be from
one or more production lots. The variation in td was slight IG = 50
1 mA/Div
and ranged from 35 to 44 ns but could vary considerably
on other production lots and this possible variation in td 0 0
would have to be considered in a parallel application.
Waveforms for minimum forward anode voltage for
100 µs/Div
turn–on are shown in Figure 5.26. The trailing edge of the
gate current pulse is phase delayed (R3) so that the SCR is Figure 5.26. Minimum Anode Voltage For Turn–On
not turned on. The width of the gate current pulse is now Off–State Voltage = 4 V Peak, RL = 0.5 Ohm,
increased (R5) until the SCR turns on and the forward IA ≈ 5 A, IG = 75 mA
anode voltage switches to the on–state at about 0.73 V.
This is the minimum voltage at which this SCR will turn Turn–off time — tq is important in higher frequency
on with the circuit conditions shown in Figure 5.28. applications which require the SCR to recover from the
For dynamic turn–on current sharing, td, tr and VA(MIN) forward conduction period and be able to block the next
are very important. As an example, with a high wattage cycle of forward voltage. Thus, tq matching for high
incandescent lamp load, it is very important that the frequency operation can be as important as td, tr and
inrush current of the cold filament be equally shared by VA(MIN) matching for equal turn–on current sharing.
the parallel SCRs. The minimum anode voltage at which a Due to the variable in tq measurement, no further
device turns on is also very important. If one of the parallel attempt will be made here to discuss this parameter and
devices turns on before the other devices and its on–state the reader is referred to Application Note AN914.
voltage is lower than the required minimum anode The need for on–state matching of current and voltage
voltage for turn–on of the unfired devices, they therefore is important, especially in unforced current sharing
cannot turn on. This would overload the device which circuits.

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UNFORCED CURRENT SHARING
When operating parallel SCRs without forced current
sharing, such as without cathode ballasting using resistors
or inductors, it is very important that the device
parameters be closely matched. This includes td, tr,
minimum forward anode voltage for turn–on and on–state
voltage matching. The degree of matching determines the
success of the circuit.
In circuits without ballasting, it is especially important
that physical layout, mounting of devices and resistance
its share of current (Figure 5.29) with RK equal zero. As
RK increases, device 2 takes a greater share of the total
current and with RK around 0.25 ohm, the four SCRs are
sharing peak current quite well. The value of RK depends
on how close the on–state voltage is matched on the SCRs
and the degree of current sharing desired, as well as the
permissible power dissipation in RK.
17

IA(pk) , PEAK ANODE CURRENT (AMPS)

paths be identical for good current sharing, even with #3 SCR #1
on–state matched devices. 15
Figure 5.27 shows how anode current can vary on
devices closely matched for on–state voltage (1, 3 and 4) 13 #4
and a mismatched device (2). Without resistance ballast-
ing, the matched devices share peak current within one
11
ampere and device 2 is passing only nine amps, seven #2 IG = 400 mA
amps lower than device 1. Table 5.6 shows the degree of PW = 400 µs
match or mismatch of VTM of the four SCRs. 9 OFF–STATE VOLTAGE = 26 V (rms)
With unforced current sharing (RK = 0), there was a INDUCTIVE LOAD
CONDUCTION ANGLE = 120°
greater tendency for one device (1) to turn–on, preventing 7
0 50 100 150 200 250
p
the others from turning on when low anode switching
voltage ( 10 V rms) was tried. Table 5.5 shows that the RK, CATHODE RESISTORS (MILLIOHMS)
minimum anode voltage for turn–on is from 7 to 14%
lower for device 1 than on 2, 3 and 4. Also, device 1 Figure 5.27. Effects Of Cathode Resistor On Anode
Current Sharing
turn–on delay is 35 ns versus 38, 45 and 44 ns for devices
2, 3 and 4.
The tendency for device 1 to turn on, preventing the
Table 5.6. MCR12D Parameters Measured On Curve
other three from turning on, is most probably due to its
Tracer, TC = 25°C
lower minimum anode voltage requirement and shorter
turn on delay. The remedy would be closer matching of Minimum Gate
the minimum anode voltage for turn–on and driving the IL, Latching VTM, On–State Current & Voltage
Current Voltage for Turn–On
gates hard (but less than the gate power specifications) Device #
VD = 12 Vdc IA = 15 A VD = 12 Vdc,
and increasing the width of the gate current pulse. IG = 100 mA PW = 300 µs RL = 140 Ω
IGT VGT
FORCED CURRENT SHARING
1 13 mA 1.25 V 5.6 mA 0.615 V
Cathode ballast elements can be used to help ensure 2 27 1.41 8.8 0.679
good static on–state current sharing. Either inductors or 3 28 1.26 12 0.658
resistors can be used and each has advantages and 4 23 1.26 9.6 0.649
disadvantages. This section discuses resistive ballasting, 5 23 1.28 9.4 0.659
6 23 1.26 9.6 0.645
but it should be kept in mind that the inductor method is
7 18 1.25 7.1 0.690
usually better suited for the higher current levels. 8 19 1.25 7 0.687
Although they are more expensive and difficult to design, 9 19 1.25 8.4 0.694
there is less power loss with inductor ballasting as well as 10 16 1.25 6.9 0.679
other benefits.
The degree of peak current sharing is shown in
Figure 5.27 for four parallel MCR12D SCRs using LINE SYNCHRONIZED DRIVE CIRCUIT
cathode resistor ballasting with an inductive anode load. Gate drive for phase control of the four parallel SCRs is
With devices 1, 3 and 4, on–state voltage is matched accomplished with one complementary MOS hex gate,
within 10 mV at an anode current of 15 A (See Table 5.6) MC14572, and two bipolar transistors (Figure 5.28). This
and are within 1A of each other in Figure 5.27, with adjustable line–synchronized driver permits SCR conduc-
cathode resistance (RK) equal to zero. As RK increases, tion from near zero to 180 degrees. A Schmitt trigger
the current sharing becomes even closer. The unmatched clocks a delay monostable multivibrator that is followed
device 2, with a VTM of 1.41 V (Table 5.6), is not carrying by a pulse–width monostable multivibrator.

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 Line synchronization is achieved through the half–
wave section of the secondary winding of the full–wave,
center–tapped transformer (A). This winding also supplies
power to the circuit through rectifiers D1 and D2.
The full–wave signal is clipped by diode D5, referenced
to a + 15 volt supply, so that the input limit of the CMOS
chip is not exceeded. The waveform is then shaped by the
Schmitt trigger, which is composed of inverters U1 – a and
U1 – b. A fast switching output signal B results.
triggers the delay multivibrator that is composed of U1 – c
and U1 – d. As a result, the normally high output is
switched low. The trailing edge of this pulse (C) then
triggers the following multivibrator, which is composed
of NAND gate U1 – e and inverter U1 – f. The positive going
output pulse (waveform D) of this multivibrator, whose
width is set by potentiometer R6, turns on transistors Q1
and Q2, which drives the gates of the four SCRs.
Transistor Q2 supplies about 400 mA drive current to each

p
The positive–going edge of this pulse is differentiated gate through 100 ohm resistors and has a rise time of
by the capacitive–resistive network of C1 and R2 and 100 ns.

D1
+ 15 V
100 Ω, 250 1N5352 + 15 V
1 W µF 25 V R3
D2 5 V, 5 W
1 mΩ
D5 R1
1N914 220 kΩ
C1 150
R4
t5
TRIAD A 0.01
U1 – a U1 – b kΩ
F90X D3 1N914 1 kΩ 22 kΩ 1 3 µF U1
6 9
FULL– 2 4 7
B R2 10
WAVE 0 kΩ 0.01
120 V 100
S1 SCHMITT TRIGGER µF U1 – d
60 Hz kΩ
HALF
D4 –
WAVE R5 0.01 t t
0.7 ms τ1 6 rms
1N914 100 kΩ µF DELAY MULTIVIBRATOR
5.30(a)
+ 15 V
U1 ––e
0.01 µF 16
A 15 V
15 13 12 U
1–f
11
t
30 µs τ2 200 µs + 40 V
14 D 8 PULSE–WIDTH
10 k
0 4.7 kΩ MULTIVIBRATOR
15 V
B 0 Q2
0.001 10 k R6
MJE253
15 V 25 kΩ TIP122
C τ1
0
15 V 0.005 TO GATES
D RESISTORS
0 1k
τ2 10 k
5.30(b)

Figure 5.28. Line–Synchronized Gate Driver

PARALLEL SCR CIRCUIT
The four SCRs are MCR12Ds, housed in the TO–220
package, rated at 12 A rms, 50 V and are shown
schematically in Figure 5.29. Due to line power limita-
tions, it was decided to use a voltage step down
transformer and not try working directly from the 120 V
line. Also, line isolation was desirable in an experiment of
this type.
The step down transformer ratings were 120 V rms
primary, 26 V rms secondary, rated at 100 A, and was used
with a variable transformer for anode voltage adjustment.
The inductive load consisted of four filter chokes in
parallel (Stancor #C–2688 with each rated at 10 mH,
12.5 Adc and 0.11 ohm).
For good current sharing with parallel SCRs, symmetry
in layout and mounting is of primary importance. The
four SCRs were mounted on a natural finish aluminum
heat sink and torqued to specification which is 8 inch
pounds. Cathode leads and wiring were identical, and
when used, the cathode resistors RK were matched within
1%. An RC snubber network (R7 and C2) was connected
across the anodes–cathodes to slow down the rate–of–rise
of the off–state voltage, preventing unwanted turn–on.

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 LOAD: FOUR STANCOR FILTER CHOKES (#C–2688) IN PARALLEL
EACH RATED AT: 10 mH @ 12.5 Adc AND 0.11 OHMS
ALL ANODES COMMON TO HEAT SINK

26 V rms Q3 Q4 Q5 Q6

100 100 100 100 R7

100
120 V rms SNUBBER
1k 1k 1k 1k
60 Hz

0.25
RK RK RK RK C2

Q3 – Q6, MCR12D

Figure 5.29. Parallel Thyristors

CHARACTERIZING RFI SUPPRESSION IN A common example of the connection of 5.30(a) is the

THYRISTOR CIRCUITS wall mounted light dimmer controlling a ceiling mounted
lamp. A motorized appliance with a built–in control such
In order to understand the measures for suppression of as a food mixer is an example of the connection shown in
EMI, characteristics of the interference must be explored 5.30(b).
first. To have interference at all, we must have a transmitter, Figure 5.30(a) may be re–drawn as shown in
or creator of interference, and a receiver, a device affected Figure 5.31, illustrating the complete circuit for RF
by the interference. Neither the transmitter nor the receiver energy. The switch in the control box represents the
need be related in any way to those circuits commonly thyristor, shown in its blocking state. In phase control
referred to as radio–frequency circuits. Common transmit- operation, this switch is open at the beginning of each
ters are opening and closing of a switch or relay contacts, half cycle of the power line alternations. After a delay
electric motors with commutators, all forms of electric arcs, determined by the remainder of the control circuitry,
and electronic circuits with rapidly changing voltages and the switch is closed and remains that way until the
currents. Receivers are generally electronic circuits, both instantaneous current drops to zero. This switch is the
low and high impedance which are sensitive to pulse or high source from which the RF energy flows down the power
frequency energy. Often the very circuits creating the lines and through the various capacitors to ground.
interference are sensitive to similar interference from other
circuits nearby or on the same power line.
CONTROL
EMI can generally be separated into two categories —
radiated and conducted. Radiated interference travels by
way of electro–magnetic waves just as desirable RF
energy does. Conducted interference travels on power,
communications, or control wires. Although this separa- LINE LOAD
tion and nomenclature might seem to indicate two neat
little packages, independently controllable, such is not the (a). Separately Mounted Control
case. The two are very often interdependent such that in
some cases control of one form may completely eliminate
the other. In any case, both interference forms must be
considered when interference elimination steps are taken.
CONTROL
Phase control circuits using thyristors (SCRs, triacs,
LINE LOAD
etc.) for controlling motor speed or resistive lighting and
heating loads are particularly offensive in creating
interference. They can completely obliterate most stations
on any AM radio nearby and will play havoc with another
(b). Control and Load in the Same Enclosure
control on the same power line. These controls are
generally connected in one of the two ways shown in the
block diagrams of Figure 5.30. Figure 5.30. Block Diagram of Control Connections

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 If the load is passive, such as a lamp or a motor which
does not generate interference, it may be considered as an
impedance bypassed with the wire–to–wire capacitance
of its leads. If it is another RF energy source, however,
such as a motor with a commutator, it must be treated
separately to reduce interference from that source. The
power supply may be considered as dc since the
interference pulse is extremely short (10 µs) compared to
the period of the power line frequency (16 ms for 60 Hz).
The inductance associated with the power source comes
from two separate phenomena. First is the leakage
impedance of the supply transformer, and second is the
self–inductance of the wires between the power line
transformer and the load.
One of the most difficult parameters to pin down in the
system is the effect of grounding. Most industrial and
commercial wiring and many homes use a grounded
conduit system which provides excellent shielding of
radiated energy emanating from the wiring. However, a
large number of homes are being wired with two to three
wire insulated cable without conduit. In three–wire
systems, one wire is grounded independently of the power
system even though one of the power lines is already
grounded. The capacitances to ground shown in
Figure 5.31 will be greatly affected by the type of
grounding used. Of course, in any home appliance,
filtering must be provided suitable for all three different
systems.
Before the switch in the control is closed, the system
is in a steady–state condition with the upper line of the
power line at the system voltage and the bottom line and
the load at ground potential. When the switch is closed,
the upper line potential instantaneously falls due to the
line and source inductance, then it rises back to its
original value as the line inductance is charged. While
the upper line is rising, the line from the control to the
load also rises in potential. The effect of both of these
lines increasing in potential together causes an electro–
static field change which radiates energy. In addition,
any other loads connected across the power lines at
point A, for example, would be affected by a temporary
loss of voltage created by the closing of the switch and
by the line and source inductance. This is a form of
conducted interference.
A second form of radiated interference is inductive
coupling in which the power line and ground form a
one–turn primary of an air core transformer. In this mode,
an unbalanced transient current flows down the power
lines with the difference current flowing to ground
through the various capacitive paths available. The
secondary is the radio antenna or the circuit being
affected. This type of interference is a problem only when
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the receiver is within about one wavelength of the
transmitter at the offending frequency.
Radiated interference from the control circuit proper is
of little consequence due to several factors. The lead
lengths in general are so short compared to the wave-
lengths in question that they make extremely poor
antenna. In addition, most of these control circuits are
mounted in metal enclosures which provide shielding for
radiated energy generated within the control circuitry.
A steel box will absorb radiated energy at 150 kHz such
that any signal inside the box is reduced 12.9 dB per mil
of thickness of the box. In other words, a 1/16 inch thick
steel box will attenuate radiated interference by over 800
dB! A similar aluminum box will attenuate 1 dB per mil
or 62.5 dB total. Thus, even in an aluminum box, the
control circuitry will radiate very little energy.
Both forms of radiated interference which are a
problem are a result of conducted interference on the
power lines which is in turn caused by a rapid rise in
current. Thus, if this current rise is slowed, all forms of
interference will be reduced.
RFI SOLUTIONS
Since the switch in Figure 5.31, when it closes, provides
a very low impedance path, a capacitor in parallel with it
will show little benefit in slowing down the rise of
current. The capacitor will be charged to a voltage
determined by the circuit constants and the phase angle of
the line voltage just before the switch closes. When the
switch closes, the capacitor will discharge quickly, its
current limited only by its own resistance and the
resistance of the switch. However, a series inductor will
slow down the current rise in the load and thus reduce the
voltage transient on all lines. A capacitor connected as
shown in Figure 5.32 will also help slow down the current
rise since the inductor will now limit the current out of the
capacitor. Thus, the capacitor voltage will drop slowly
and correspondingly the load voltage will increase slowly.
Although this circuit will be effective in many cases,
the filter is unbalanced, providing an RF current path
through the capacitances to ground. It has, therefore, been
found advantageous to divide the inductor into two parts
and to put half in each line to the control. Figure 5.33
illustrates this circuit showing the polarity marks of two
coils which are wound on the same core.
A capacitor at point A will help reduce interference
further. This circuit is particularly effective when used
with the connection of Figure 5.30(b) where the load is
not always on the grounded side of the power line. In this
case, the two halves of the inductor would be located in
the power line leads, between the controlled circuit and
the power source.

A tive; those with highest permeability and saturation flux
CONTROL
LOAD
Figure 5.31. RF Circuit for Figure 5.30(a)
100 µH
0.1 µF
CONTROL
10 A TRIAC
8A
LOAD
Figure 5.32. One Possible EMI Reduction Circuit
Where the control circuit is sensitive to fast rising line
transients, a capacitor at point B will do much to eliminate
this problem. The capacitor must charge through the
impedance of the inductor, thus limiting the rate of
voltage change (dv/dt) applied to the thyristor while it is
in the blocking state.
DESIGN CRITERIA
Design equations for the split inductor have been
developed based on parameters which should be known
before attempting a design. The most difficult to
determine is tr, the minimum allowable current rise
time which will not cause objectionable interference.
The value of this parameter must be determined
empirically in each situation if complete interference
reduction is needed. ON Semiconductor has conducted
extensive tests using an AM radio as a receiver and a
600 Watt thyristor lamp dimmer as a transmitter. A rate
of about 0.35 Amp per µs seems to be effective in
eliminating objectionable interference as well as
materially reducing false triggering of the thyristor due
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to line transients. The value of tr may be calculated by
dividing the peak current anticipated by the allowable
rate of current rise.
Ferrite core inductors have proved to be the most
practical physical configuration. Most ferrites are effec-
density are preferred. Those specifically designed as high
frequency types are not necessarily desirable.
Laminated iron cores may also be used; however, they
require a capacitor at point A in Figure 5.33 to be at all
effective. At these switching speeds, the iron requires
considerable current in the windings before any flux
change can take place. We have found currents rising to
half their peak value in less than one µs before the
inductance begins to slow down the rise. The capacitor
supplies this current for the short period without dropping
in voltage, thus eliminating the pulse on the power line.
Once a core material has been selected, wire size is the
next decision in the design problems. Due to the small
number of turns involved (generally a single layer)
smaller sizes than normally used in transformers may be
chosen safely. Generally, 500 to 800 circular mills per
ampere is acceptable, depending on the enclosure of the
filter and the maximum ambient temperature expected.
An idea of the size of the core needed may be
determined from the equation:
(1) A cA w + 26 Awire
B MAX
E rms t r
where:
Ac = the effective cross–sectional area of the core
in in2
Aw = available core window area in in2
Awire = wire cross section in circular mils
BMAX = core saturation flux density in gauss
tr = allowable current rise time in seconds
Erms = line voltage
(A factor of 3 has been included in this equation to allow
for winding space factor.) Once a tentative core selection
has been made, the number of turns required may be
found from the equation:
+ 11 EBrmsMAXtrAc 10
6
(2) N
where:
N = the total number of turns on the core
The next step is to check how well the required number of
turns will fit onto the core. If the fit is satisfactory, the
core design is complete; if not, some trade–offs will have
to be made.
 240 µH As was previously mentioned, a current rise rate of
CONTROL about 0.35 ampere per µs has been found to be acceptable
120 Vac A B
10 A TRIAC for interference problems with ac–dc radios in most
5A 240 µH wiring situations. With 5 amperes rms, 7 amperes peak,

LOAD
tr + 0.35
7 + 20 ms

Figure 5.33. Split Inductor Circuit Then the equation (1):

In most cases, the inductor as designed at this point will

A cA w + 26 2580 120 20 10 *6 + 0.044
have far too much inductance. It will support the entire 3800 gauss
peak line voltage for the time selected as tr and will then
saturate quickly, giving much too fast a current rise. The Core part number 1F30 of the same company in a U–1
required inductance should be calculated from the configuration has an AcAw product of 0.0386, which
allowable rise time and load resistance, making the rise should be close enough.
time equal to two time constants. Thus:

(3) 2L
R
+ tr or L + R2tr N + 10.93 120 20 10 6 * 10 6 + 42 turns
3800 0.137
Paper or other insulating material should be inserted
between the core halves to obtain the required inductance Two coils of 21 turns each should be wound on either one
by the equation:
*8 or two legs and be connected as shown in Figure 5.33.
+ 3.19 N * Imc
2 Ac 10
(4) Ig The required inductance of the coil is found from
L equation (3).
where:
Ig = total length of air gap in inches
µ = effective ac permeability of the core material at
the power line frequency
L + R2tr + EIrated
rated tr
2
+120
5
20
2
+ 240
10 –6 10–6

Ic = effective magnetic path length of the core L + 240 mH

in inches
Ac = effective cross sectional area of the core in
square inches To obtain this inductance, the air gap should be
L = inductance in henries
DESIGN EXAMPLE Ig +3.19 422402 0.137 10 –8 – 3.33
10 –6 1900
+ 0.0321–0.00175
Consider a 600 watt, 120 Volt lamp dimmer using an I g + 0.03035
ON Semiconductor 2N6348A triac. Line current is 600 =
120
5 amperes. #16 wire will provide about 516 circular mils
Thus, 15 mils of insulating material in each leg will
per ampere.
provide the necessary inductance.
For core material, type 3C5 of Ferroxcube Corporation
of America, Saugerties, New York, has a high Bmax and µ. If a problem still exists with false triggering of the
The company specifies BMAX = 3800 gauss and µ = 1900 thyristor due to conducted interference, a capacitor at
for material. point B in Figure 5.33 will probably remedy the situation.

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 SECTION 6
APPLICATIONS

Edited and Updated PORTION OF WAVEFORM

APPLIED TO LOAD
Because they are reliable solid state switches, thyristors
have many applications, especially as controls.
α
One of the most common uses for thyristors is to control
ac loads such as electric motors. This can be done either by
α
controlling the part of each ac cycle when the circuit
conducts current (phase control) or by controlling the
number of cycles per time period when current is con-
ducted (cycle control).
In addition, thyristors can serve as the basis of relaxation Figure 6.1. Phase Control of AC Waveform
oscillators for timers and other applications. Most of the
devices covered in this book have control applications.

PHASE CONTROL WITH THYRISTORS

The most common method of electronic ac power
LOAD
control is called phase control. Figure 6.1 illustrates this
concept. During the first portion of each half-cycle of the RT
ac sine wave, an electronic switch is opened to prevent the
current flow. At some specific phase angle, α, this switch is AC LINE Q
closed to allow the full line voltage to be applied to the load VOLTAGE
for the remainder of that half-cycle. Varying α will control
D
the portion of the total sine wave that is applied to the load CT
(shaded area), and thereby regulate the power flow to the
load.
The simplest circuit for accomplishing phase control is
shown in Figure 6.2. The electronic switch in this case is a Figure 6.2. Simplest Circuit for Phase Control
triac (Q) which can be turned on by a small current pulse to
its gate. The TRIAC turns off automatically when the
current through it passes through zero. In the circuit shown,
capacitor CT is charged during each half-cycle by the
current flowing through resistor RT and the load. The fact
that the load is in series with RT during this portion of the α = 150°
cycle is of little consequence since the resistance of RT is
many times greater than that of the load. When the voltage α = 90°
across CT reaches the breakdown voltage of the DIAC
bilateral trigger (D), the energy stored in capacitor CT is
released. This energy produces a current pulse in the α = 90°
DIAC, which flows through the gate of the TRIAC and
turns it on. Since both the DIAC and the TRIAC are α = 150°
bidirectional devices, the values of RT and CT will APPLIED SINE WAVE
determine the phase angle at which the TRIAC will be Figure 6.3. Waveforms of Capacitor Voltage
triggered in both the positive and negative half-cycles of at Two Phase Angles
the ac sine wave.

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 The waveform of the voltage across the capacitor for two VR 3/4 VR
typical control conditions (α = 90° and 150°) is shown in TYPICAL FAN
LOAD
Figure 6.3. If a silicon controlled rectifier is used in this
circuit in place of the TRIAC, only one half-cycle of the
VR = FULL RATED VOLTAGE
waveform will be controlled. The other half-cycle will be

SPEED
blocked, resulting in a pulsing dc output whose average 1/2 VR
value can be varied by adjusting RT. CONSTANT
TORQUE LOAD

1/4 VR

CONTROL OF INDUCTION MOTORS

Shaded-pole motors driving low-starting-torque loads
such as fans and blowers may readily be controlled using
any of the previously described full-wave circuits. One
needs only to substitute the winding of the shaded-pole
motor for the load resistor shown in the circuit diagrams.
Constant-torque loads or high-starting-torque loads are
difficult, if not impossible, to control using the voltage
controls described here. Figure 6.4 shows the effect of
varying voltage on the speed-torque curve of a typical
shaded-pole motor. A typical fan-load curve and a
constant-torque-load curve have been superimposed upon
this graph. It is not difficult to see that the torque developed
by the motor is equal to the load torque at two different
points on the constant-torque-load curve, giving two points
of equilibrium and thus an ambiguity to the speed control.
The equilibrium point at the lower speed is a condition of
high motor current because of low counter EMF and would
result in burnout of the motor winding if the motor were
left in this condition for any length of time. By contrast, the
fan speed-torque curve crosses each of the motor speed-
torque curve crosses each of the motor speed-torque curves
at only one point, therefore causing no ambiguities. In
addition, the low-speed point is one of low voltage well
within the motor winding’s current-carrying capabilities.
Permanent-split-capacitor motors can also be controlled
by any of these circuits, but more effective control is
achieved if the motor is connected as shown in Figure 6.5.
Here only the main winding is controlled and the capacitor
winding is continuously connected to the entire ac line
voltage. This connection maintains the phase shift between
the windings, which is lost if the capacitor phase is also
controlled. Figure 6.6(a) shows the effect of voltage on the
speed-torque characteristics of this motor and a superim-
posed fan-load curve.
TORQUE
Figure 6.4. Characteristics of Shaded-Pole Motors
at Several Voltages
MOT
AC LINE
VOLTAGE
CONTROL
CIRCUIT
Figure 6.5. Connection Diagram for
Permanent-Split-Capacitor Motors
Not all induction motors of either the shaded-pole or
the permanent-split-capacitor types can be controlled
effectively using these techniques, even with the proper
loads. Motors designed for the highest efficiencies and,
therefore, low slip also have a very low starting torque
and may, under certain conditions, have a speed-torque
characteristic that could be crossed twice by a specific
fan-load speed-torque characteristic. Figure 6.6(b) shows
motor torque-speed characteristic curves upon which has
been superimposed the curve of a fan with high starting
torque. It is therefore desirable to use a motor whose
squirrel-cage rotor is designed for medium-to-high imped-
ance levels and, therefore, has a high starting torque. The
slight loss in efficiency of such a motor at full rated speed
and load is a small price to pay for the advantage of speed
control prevents the TRIAC from turning on due to line
transients and inductive switching transients.

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 TYPICAL FAN HIGH-STARTING-
LOAD TORQUE FAN
LOAD
VR

VR
3/4 VR

SPEED
SPEED

3/4 VR
1/2 VR
1/2 VR

1/4 VR 1/4 VR

VR = FULL RATED VOLTAGE

TORQUE TORQUE
(a). High-Starting-Torque Motor (b). High-Efficiency Motor

Figure 6.6. Speed–Torque Curves for a Permanent–Split–Capacitor Motors at Various Applied Voltages

A unique circuit for use with capacitor-start motors in

explosive or highly corrosive atmospheres, in which the
arcing or the corrosion of switch contacts is severe and
undesirable, is shown in Figure 6.7. Resistor R1 is C1
MOT
connected in series with the main running winding and is
AC LINE
of such a resistance that the voltage drop under normal
VOLTAGE
full-load conditions is approximately 0.2 V peak. Since
C2
starting currents on these motors are quite high, this peak
voltage drop will exceed 1 V during starting conditions,
triggering the TRIAC, which will cause current to flow R2
R1
in the capacitor winding. When full speed is reached, the
current through the main winding will decrease to about
0.2 V, which is insufficient to trigger the TRIAC — thus
Figure 6.7. Circuit Diagram for Capacitor-Start Motor
the capacitor winding will no longer be energized.
Resistor R2 and capacitor C2 form a dv/dt suppression
network; this prevents the TRIAC from turning on due to
line transients and inductive switching transients.
CONTROL OF UNIVERSAL MOTORS VR = FULL RATED VOLTAGE
Any of the half-wave or full-wave controls described VR
previously can be used to control universal motors. Non- VR 3/4 VR
feedback, manual controls, such as those shown in
Figure 6.2, are simple and inexpensive, but they provide
SPEED

SPEED

very little torque at low speeds. A comparison of typical 3/4 VR 1/2 VR

speed-torque curves using a control of this type with those of 1/2 VR 1/4 VR
feedback control is shown in Figure 6.8.
These motors have some unique characteristics which
allow their speed to be controlled very easily and
efficiently with a feedback circuit such as that shown in
Figure 6.9. This circuit provides phase-controlled half-
wave power to the motor; that is, on the negative TORQUE TORQUE
(A) NON-FEEDBACK CONTROL (B) FEEDBACK CONTROL
half-cycle, the SCR blocks current flow in the negative
direction causing the motor to be driven by a pulsating
Figure 6.8. Comparison of Feedback Control
direct current whose amplitude is dependent on the phase
with Non-Feedback Control
control of the SCR.

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 The theory of operation of this control circuit is not at all
difficult to understand. Assuming that the motor has been
running, the voltage at point A in the circuit diagram must
be larger than the forward drop of Diode D1, the
gate-to-cathode drop of the SCR, and the EMF generated
by the residual MMF in the motor, to get sufficient current
flow to trigger the SCR.
The waveform at point A (VA) for one positive
half-cycle is shown in 6.9(b), along with the voltage
levels of the SCR gate (VSCR), the diode drop (VD), and
the motor-generated EMF (VM). The phase angle (α) at
which the SCR would trigger is shown by the vertical
dotted line. Should the motor for any reason speed up so
that the generated motor voltage would increase, the
trigger point would move upward and to the right along
the curve so that the SCR would trigger later in the
half-cycle and thus provide less power to the motor,
causing it to slow down again.
Similarly, if the motor speed decreased, the trigger point
would move to the left and down the curve, causing the
TRIAC to trigger earlier in the half-cycle providing more
power to the motor, thereby speeding it up.
Resistors R1, R2, and R3, along with diode D2 and
capacitor C1 form the ramp-generator section of the circuit.
Capacitor C1 is changed by the voltage divider R1, R2, and
R3 during the positive half-cycle. Diode D2 prevents
negative current flow during the negative half-cycle,
therefore C1 discharges through only R2 and R3 during
that half-cycle. Adjustment of R3 controls the amount by
which C1 discharges during the negative half-cycle.
Because the resistance of R1 is very much larger than the
ac impedance of capacitor C1, the voltage waveform on C1
approaches that of a perfect cosine wave with a dc
component. As potentiometer R2 is varied, both the dc and
the ac voltages are divided, giving a family of curves as
shown in 6.9(c).
R1
A D1
C1 R2
AC LINE C2
VOLTAGE
R3
MOT
D2
Figure 6.9. (a). Speed-Control Scheme for
Universal Motors
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The gain of the system, that is, the ratio of the change of
effective SCR output voltage to the change in generator
EMF, is considerably greater at low speed settings than it is
at high speed settings. This high gain coupled with a motor
with a very low residual EMF will cause a condition
sometimes known as cycle skipping. In this mode of
operation, the motor speed is controlled by skipping entire
cycles or groups of cycles, then triggering one or two
cycles early in the period to compensate for the loss in
speed. Loading the motor would eliminate this condition;
however, the undesirable sound and vibration of the motor
necessitate that this condition be eliminated. This can be
done in two ways.
The first method is used if the motor design is fixed and
cannot be changed. In this case, the impedance level of the
voltage divider R1, R2 and R3 can be lowered so that C1
will charge more rapidly, thus increasing the slope of the
ramp and lowering the system gain. The second method,
which will provide an overall benefit in improved circuit
performance, involves a redesign of the motor so that the
residual EMF becomes greater. In general, this means using
a lower grade of magnetic steel for the laminations. As a
matter of fact, some people have found that ordinary
cold-rolled steel used as rotor laminations makes a motor
ideally suited for this type of electronic control.
Another common problem encountered with this circuit
is that of thermal runaway. With the speed control set at
low or medium speed, at high ambient temperatures the
speed may increase uncontrollably to its maximum value.
This phenomenon is caused by an excessive impedance in
the voltage-divider string for the SCR being triggered. If
the voltage-divider current is too low, current will flow into
the gate of the SCR without turning it on, causing the
waveform at point A to be as shown in 6.9(d). The flat
portion of the waveform in the early part of the half-cycle
is caused by the SCR gate current loading the voltage
divider before the SCR is triggered. After the SCR is
triggered, diode D1 is back-biased and a load is no longer
on the voltage divider so that it jumps up to its unloaded
voltage. As the ambient temperature increases, the SCR
becomes more sensitive, thereby requiring less gate current
to trigger, and is triggered earlier in the half-cycle.This
early triggering causes increased current in the SCR,
thereby heating the junction still further and increasing still
further the sensitivity of the SCR until maximum speed has
been reached.
The solutions to this problem are the use of the most
sensitive SCR practical and a voltage divider network of
sufficiently low impedance. As a rough rule of thumb, the
average current through the voltage divider during the
positive half-cycle should be approximately three times the
current necessary to trigger the lowest-sensitivity (highest
gate current) SCR being used.
 VA be short-circuited without causing danger. Many designers
have found it advantageous, therefore, to use 115 V motors
VA
with this system and provide a switch to apply full-wave
voltage to the motor for high-speed operation. Figure 6.10
VD shows the proper connection for this switch. If one were to
VSCR simply short-circuit the SCR for full-speed operation, a
VM problem could arise. If the motor were operating at full
speed with the switch closed, and the switch were then
α opened during the negative half-cycle, the current flowing
PHASE in the inductive field of the motor could then break down
ANGLE the SCR in the negative direction and destroy the control.
(b). Waveform for One Positive Half-Cycle of Circuit With the circuit as shown, the energy stored in the field of
the motor is dissipated in the arc of the switch before the
SCR is connected into the circuit.
VA

(R2)′

R2 (R2)″
VM

AC LINE VOLTAGE
α1 α2 α3 PHASE
ANGLE
CONTROL
(c). Voltage Waveform at Point “A” for Three Settings
CIRCUIT
of Potentiometer R2

MOT
TRIGGER
POINT

Figure 6.10. Switching Scheme for

Full-Wave Operation

UNLOADED
WAVEFORM
ACTUAL
WAVEFORM
(d). Point “A” Voltage with Excessive Resistance R1
In addition to the type of steel used in the motor
laminations, consideration should also be given to the
design of motors used in this half-wave speed control.
Since the maximum rms voltage available to the motor
under half-wave conditions is 85 V, the motor should be
designed for use at that voltage to obtain maximum speed.
However, U.L. requirements state that semiconductor
devices used in appliance control systems must be able to
CONTROL OF PERMANENT-MAGNET MOTORS
As a result of recent developments in ceramic perma-
nent-magnet materials that can be easily molded into
complex shapes at low cost, the permanent-magnet motor
has become increasingly attractive as an appliance compo-
nent. Electronic control of this type of motor can be easily
achieved using techniques similar to those just described
for the universal motor. Figure 6.11 is a circuit diagram of
a control system that we have developed and tested
successfully to control permanent-magnet motors presently
being used in blenders. Potentiometer R3 and diode D1
form a dc charging path for capacitor C1; variable resistor
R1 and resistor R2 form an ac charging path which creates
the ramp voltage on the capacitor. Resistor R4 and diode
D2 serve to isolate the motor control circuit from the ramp
generator during the positive and negative half-cycles,
respectively.

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D1
R1 R3
AC LINE VOLTAGE
R2 R4 D2
C1
MOT
Figure 6.11. Circuit Diagram for Controlling
Permanent-Magnet Motors
A small amount of cycle skipping can be experienced at
low speeds using this control, but not enough to necessitate
further development work. Since the voltage generated
during off time is very high, the thermal runaway problem
does not appear at all. Typical speed-torque curves for
motors of this type are shown in Figure 6.12.
VR VR = FULL RATED VOLTAGE
3/4 VR
SPEED
1/2 VR
1/4 VR
TORQUE
Figure 6.12. Speed-Torque
Characteristic of Permanent-Magnet
Motors at Various Applied Voltages
MOTOR SPEED CONTROL WITH FEEDBACK
While many motor speed control circuits have used
SCRs, the TRIAC has not been very popular in this
application. At first glance, it would appear that the TRIAC
would be perfect for speed control because of its bilateral
characteristics. There are a couple of reasons why this is
not true. The major difficulty is the TRIAC’s dv/dt charac-
teristic. Another reason is the difficulty of obtaining a feed-
back signal because of the TRIAC’s bilatera nature.
While the TRIAC has its disadvantages, it does offer
some advantages. In a SCR speed control either two SCRs
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must be used, or the line voltage must be full-wave
rectified using relatively high current rectifiers, or the
control must be limited to half-wave. The TRIAC elimi-
nates all these difficulties. By using a TRIAC the part
count, package size, and cost can be reduced. Figure 6.13
shows a TRIAC motor speed control circuit that derives its
feedback from the load current and does not require
separate connections to the motor field and armature
windings. Therefore, this circuit can be conveniently built
into an appliance or used as a separate control.
The circuit operates as follows: When the TRIAC
conducts, the normal line voltage, less the drop across the
TRIAC and resistor R5, is applied to the motor. By
delaying the firing of the TRIAC until a later portion of the
cycle, the rms voltage applied to the motor is reduced and
its speed is reduced proportionally. The use of feedback
maintains torque at reduced speeds.
Diodes D1 through D4 form a bridge which applies
full-wave rectified voltage to the phase-control cir-
cuit. Phase control of the TRIAC is obtained by the
charging of capacitor C1 through resistors R2 and R3 from
the voltage level established by zener diode D5. When C1
charges to the firing voltage of PUT Q1, the TRIAC
triggers by transformer T1. C1 discharges through the
emitter of Q1. While the TRIAC is conducting, the voltage
drop between points A and B falls below the breakdown
voltage of D5. Therefore, during the conduction period, the
voltage on C1 is determined by the voltage drop from A to
B and by resistors R1, R2, and R3. Since the voltage
between A and B is a function of motor current due to
resistor R5, C1 is charged during the conduction period to a
value which is proportional to the motor current. The value
of R5 is chosen so that C1 cannot charge to a high enough
voltage to fire Q1 during the conduction period. However,
the amount of charging required to fire Q1 has been
decreased by an amount proportional to the motor current.
Therefore, the firing angle at which Q1 will fire has been
advanced in proportion to the motor current. As the motor
is loaded and draws more current, the firing angle of Q1 is
advanced even more, causing a proportionate increase in
the rms voltage applied to the motor, and a consequent
increase in its available torque.
Since the firing voltage of Q1 depends on the voltage
from base one to base two, it is necessary to support the
base two voltage during the conduction portion of the cycle
to prevent the feedback voltage from firing Q1. D6 and C2
perform this function.
Because the motor is an inductive load, it is necessary to
limit the commutation dv/dt for reliable circuit operation.
R6 and C3 perform this function.
 A
R1

18 k R2 D6
2W 27 k 1N4001

D1 R3 R4 Q2
D2 R6
50 k Q1 16 k MAC9D
115 VAC 2N6027 100 Ω
IN4006(4) D5 C2
60 Hz ZENER 10 µF
9.1 V 10 V C3
D3
D4 0.1 µF
C1 R7
0.1 µF 27 k

T1 R5
DALE SEE TABLE
PT-50 ORIGIN

B
MOTOR NOMINAL R5 VALUES
R5
Motor Rating
(Amperes) OHMS Watts R5 + I2M
2 1 5
3 0.67 10 IM = Max. Rated
Motor Current
6.5 0.32 15
(RMS)

Figure 6.13. Motor Speed Control with Feedback

Nominal values for R5 can be obtained from the table or
they can be calculated from the equation given. Exact
values for R5 depend somewhat on the motor characteris-
tics. Therefore, it is suggested that R5 be an adjustable
wirewound resistor which can be calibrated in terms of
motor current, and the speed control can be adapted to
many different motors. If the value of R5 is too high,
feedback will be excessive and surging or loss of control
will result. If the value is too low, a loss of torque will
result. The maximum motor current flows through R5, and
its wattage must be determined accordingly.
This circuit has been operated successfully with 2 and 3
ampere 1/4-inch drills and has satisfactorily controlled
motor speeds down to 1/3 or less of maximum speed with
good torque characteristics. to the motor, and a consequent
increase in its available torque.
AN INTEGRATED CIRCUIT FEEDBACK
CONTROL
The TDA1185A TRIAC phase angle controller
(Figure 6.14) generates controlled triac triggering pulses
and applies positive current feedback to stabilize the speed
of universal motors. A ramp voltage synchronized to the ac
line half cycle and compared to an external set voltage
determines the firing angle. Negative gate pulses drive the
triac in quadrants two and three.
Because the speed of a universal motor decreases as
torque increases, the TDA1185A lengthens the triac
conduction angle in proportion to the motor current, sensed
through resistor R9.
The TDA1185A is the best solution for low cost
applications tolerating 5% motor speed variation. Open
loop systems do not have a tachometer or negative
feedback and consequently cannot provide perfect speed
compensation.
CONSTANT SPEED MOTOR CONTROL USING
TACHOMETER FEEDBACK
Tachometer feedback sensing rotor speed provides
excellent performance with electric motors. The principal
advantages to be gained from tachometer feedback are the
ability to apply feedback control to shaded-pole motors,
and better brush life in universal motors used in feedback
circuits. This latter advantage results from the use of
full-wave rather than half-wave control, reducing the peak
currents for similar power levels.

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 + 100
14 R9
100 µF 0.05
C8
8 POSITIVE 9
FEEDBACK
1.0 µF
120 k
R12 FULL-WAVE

+ FULL-WAVE 2
TRIGGER PULSE MAC8D
12 – GENERATOR
SET 6 820 k

+ MONITORING CURRENT
SYNCHRO
M

13 10 4 – VCC 1 7 820 k
C13 +
R10 C4 SAWTOOTH
RCOMPENSATION SOFT
START GENERATOR VOLTAGE SYNCHRO
PROGRAMMING PIN 2.0 W

MAIN LINE 18 k 1N4005

VOLTAGE COMPENSATION

Figure 6.14. TDA 1185-A Universal Motor Speed Control — Internal Block Diagram/Pin Assignment

THE TACHOMETER
The heart of this system is, of course, the speed-sensing
tachometer itself. Economy being one of the principal
goals of the design, it was decided to use a simple magnetic
tachometer incorporating the existing motor fan as an
integral part of the magnetic circuit. The generator consists
of a coil wound on a permanent magnet which is placed so
that the moving fan blades provide a magnetic path of
varying reluctance as they move past the poles of the
magnet. Several possible configurations of the magnetic
system are shown in Figure 6.15.
Flux in a magnetic circuit can be found from the
“magnetic Ohm’s law”:
position of the motor armature, the magnetic path will be of
relatively low reluctance; then as the motor turns the
reluctance will increase until one fan blade is precisely
centered between the poles of the magnet. As rotation
continues, the reluctance will then alternately increase and
decrease as the fan blades pass the poles of the magnet. If a
bar- or L-shaped magnet is used so that one pole is close to
the shaft or the frame of the motor and the other is near the
fan blades, the magnetic path reluctance will vary as each
blade passes the magnet pole near the fan. In either case the
varying reluctance causes variations in the circuit flux and
a voltage is generated in the coil wound around the magnet.
The voltage is given by the equation:

φ + MMF ,
R
where φ = the flux,
MMF = the magnetomotive force (strength of
the magnet), and
R = the reluctance of the magnetic path.
Assuming the MMF of the permanent magnet to be
constant, it is readily apparent that variations in reluctance
will directly affect the flux. The steel fan blades provide a
low-reluctance path for the flux once it crosses the air gap
between them and the poles of the magnet. If the magnet
used has a horseshoe or U shape, and is placed so that
adjacent fan blades are directly opposite each pole in one
e + –N dφdt x 10–8,
where e = the coil voltage in volts,
N = the number of turns in the coil, and
dφ = the rate of change of flux in lines per
dt second.
In a practical case, a typical small horseshoe magnet wound
with 1000 turns of wire generated a voltage of about
0.5 volts/1000 rpm when mounted in a blender.
Since both generated voltage and frequency are directly
proportional to the motor speed, either parameter can be
used as the feedback signal. However, circuits using
voltage sensing are less complex and therefore less
expensive. Only that system will be discussed here.

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 COIL WIRES
MAGNET
MOTOR
ARMATURE
MOTOR FAN
SIDE VIEW
MOTOR FAN
COIL
WIRES
MOTOR
ARMATURE
MAGNET
TOP VIEW
Figure 6.15. (a). Locations for Magnetic Sensing
Tachometer Generator Using a Horseshoe Magnet
THE ELECTRONICS
In one basic circuit, which is shown in Figure 6.16, the
generator output is rectified by rectifier D1, then filtered
and applied between the positive supply voltage and the
base of the detector transistor Q1. This provides a negative
voltage which reduces the base-voltage on Q1 when the
speed increases.
The emitter of the detector transistor is connected to a
voltage divider which is adjusted to the desired tachometer
output voltage. In normal operation, if the tachometer
voltage is less than desired, the detector transistor, Q1, is
turned on by current through R1 into its base. Q1 then turns
on Q2 which causes the timing capacitor for programmable
unijunction transistor Q3 to charge quickly.
As the tachometer output approaches the voltage desired,
the base-emitter voltage of Q1 is reduced to the point at
which Q1 is almost cut off. Thereby, the collector current
of Q2, which charges the PUT timing capacitor, reduces,
causing it to charge slowly and trigger the thyristor later in
the half cycle. In this manner, the average power to the
motor is reduced until just enough power to maintain the
desired motor speed is allowed to flow.
Input circuit variations are used when the tachometer
output voltage is too low to give a usable signal with a
silicon rectifier. In the variation shown in Figure 6.16(b),
the tachometer is connected between a voltage divider and
the base of the amplifier transistor. The voltage divider is
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FAN
MOTOR
ARMATURE
FERROUS
MOTOR HOUSING
POSSIBLE MAGNET SHAPES
AND LOCATIONS
(b). Locations for Magnetic Sensing Tachometer
Generator Using an “L” or Bar Magnet
set so that with no tachometer output the transistor is just
barely in conduction. As the tachometer output increases,
QT is cut off on negative half cycles and conducts on
positive half cycles. Resistors R9 and R10 provide a fixed
gain for this amplifier stage, providing the hFE of QT is
much greater than the ratio of R9 to R10. Thus the output
of the amplifier is a fixed multiple of the positive values of
the tachometer waveform. The rectifier diode D1 prevents
C1 from discharging through R9 on negative half cycles of
the tachometer. The remainder of the filter and control
circuitry is the same as the basic circuit.
In the second variation, shown in 6.16(c), R8 has been
replaced by a semiconductor diode, D2. Since the voltage
and temperature characteristics more closely match those
of the transistor base-to-emitter junction, this circuit is
easier to design and needs no initial adjustments as does the
circuit in 6.16(b). The remainder of this circuit is identical
to that of Figure 6.15.
In the second basic circuit, which is shown in Figure 6.17,
the rectified and filtered tachometer voltage is added to the
output voltage of the voltage divider formed by R1 and R2.
If the sum of the two voltages is less than V1 – VBE Q1
(where VBE Q1 is the base-emitter voltage of Q1), Q1 will
conduct a current proportional to V1 – VBE Q1, charging
capacitor C. If the sum of the two voltages is greater than V1
– VBE Q1, Q1 will be cut off and no current will flow into the
capacitor. The operation of the remainder of the circuit is the
same as the previously described circuits.
 +V (PURE dc) control circuit, the thyristor switches on for the remainder
1 of the half cycle. By controlling the phase angle at which
C1 R5 (PULSING dc)
R1 R2 R3
the thyristor is switched on, the relative power in the load
+ V2
may be controlled.
Q2
D1 Q1
R6 PHASE CONTROL WITH PROGRAMMABLE
TACHOMETER LOAD
UNIJUNCTION TRANSISTORS
GENERATOR
R4 120 V PUTs provide a simple, convenient means for obtaining
INPUT CIRCUIT AC the thyristor trigger pulse synchronized to the ac line at a
C2
DETECTOR AND POWER controlled phase angle.
CONTROL CIRCUIT

Figure 6.16. (a). Basic Tachometer Control Circuit + V1 (PURE dc)

R1 + V2 PULSATING dc

TACH
Q1 LOAD
R9 C1 R1
R7
TACH 120 VAC

QT R2 C
D1

R8 R10

Figure 6.17. Another Basic Tachometer Circuit

(b). Variation Used when the Tachometer Output is
Too Low for Adequate Control
These circuits are all based on the simple relaxation
oscillator circuit of Figure 6.18. RT and CT in the figure
form the timing network which determines the time
between the application of voltage to the circuit (repre-
R9 C1 R1
R7 sented by the closing of S1) and the initiation of the pulse.
TACH In the case of the circuit shown, with Vs pure dc, the
QT oscillator is free running, RT and CT determine the
D1 frequency of oscillation. The peak of the output pulse
D2 R10
voltage is clipped by the forward conduction voltage of the
gate to cathode diode in the thyristor. The principal
waveforms associated with the circuit are shown in
Figure 6.18(b).
(c). Variation Providing Better Temperature Tracking Operation of the circuit may best be described by
and Easier Initial Adjustment
referring to the capacitor voltage waveform. Following
power application, CT charges at the rate determined by its
own capacitance and the value of RT until its voltage
PHASE CONTROL WITH TRIGGER DEVICES
reaches the peak point voltage of the PUT. Then the PUT
Phase control using thyristors is one of the most common switches into conduction, discharging CT through RGK and
means of controlling the flow of power to electric motors, the gate of the thyristor. With Vs pure dc, the cycle then
lamps, and heaters. With an ac voltage applied to the repeats immediately; however, in many cases Vs is derived
circuit, the gated thyristor (SCR, TRIAC, etc.) remains in from the anode voltage of the thyristor so that the timing
its off-state for the first portion of each half cycle of the cycle cannot start again until the thyristor is blocking
power line, then, at a time (phase angle) determined by the forward voltage and once again provides Vs.

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 In this circuit, RD is selected to limit the current through D1
RT LOAD so that the diode dissipation capability is not exceeded.
RB1
G A Dividing the allowable diode dissipation by one-half the
zener voltage will give the allowable positive current in the
VS CT diode since it is conducting in the voltage regulating mode
RB2 K only during positive half cycles. Once the positive half-
RGK cycle current is found, the resistor value may be calculated
by subtracting 0.7 times the zener voltage from the rms line
voltage and dividing the result by the positive current:
(a)
RD
* 0.7 Vz
+ ErmsIpositive
Von The power rating of RD must be calculated on the basis of
full wave conduction as D1 is conducting on the negative
CAPACITOR
VOLTAGE

half cycle acting as a shunt rectifier as well as providing Vs

V CT

on the positive half cycle.

Voff

RD
RT R1

V
D1
OUTPUT VOLTAGE

VS
V RB1

CT
VCG R2
R3
IBBRB1
0 LINE
(a)
(b)
RECTIFIED
VS SINE WAVE
Figure 6.18. Basic Relaxation Oscillator Circuit (a)
and Waveforms (b)

It is often necessary to synchronize the timing of the

output pulses to the power line voltage zero-crossing (b)
points. One simple method of accomplishing synchroniza- Figure 6.19. Control Circuit (a) with Zener
tion is shown in Figure 6.19. Zener diode D1 clips the Clipped, Rectified Voltage (b)
rectified supply voltage resulting in a Vs as shown in
6.19(b). Since VS, and therefore the peak point voltage of
the PUT drops to zero each time the line voltage crosses
zero, CT discharges at the end of every half cycle and LOAD
begins each half cycle in the discharged state. Thus, even if
600 W RD 6.8 k
the PUT has not triggered during one half cycle, the 2W
capacitor begins the next half cycle discharged. Conse-
quently, the values of RT and CT directly control the phase AC RT R1 5.1 k
100 k
angle at which the pulse occurs on each half cycle. The LINE 2N6027
zener diode also provides voltage stabilization for the D1 MCR8D
1N5250 R2 10 k
timing circuit giving the same pulse phase angle regardless A
CT
of normal line voltage fluctuations. 0.1 µF R3 100 k

APPLICATIONS
The most elementary application of the PUT trigger Figure 6.20. Half Wave Control Circuit with Typical
circuit, shown in Figure 6.20, is a half-wave control circuit. Values for a 600 Watt Resistive Load

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 The thyristor is acting both as a power control device and
a rectifier, providing variable power to the load during the
positive half cycle and no power to the load during the
negative half cycle. The circuit is designed to be a two
terminal control which can be inserted in place of a switch.
If full wave power is desired as the upper extreme of this
control, a switch can be added which will short circuit the
SCR when RT is turned to its maximum power position.
The switch may be placed in parallel with the SCR if the
load is resistive; however, if the load is inductive, the load
must be transferred from the SCR to the direct line as
shown in Figure 6.21.
CONTROL
CIRCUIT
(a). Resistive Load
CONTROL
CIRCUIT
Full wave control may be realized by the addition of a
bridge rectifier, a pulse transformer, and by changing the
thyristor from an SCR to a TRIAC, shown in Figure 6.22.
Occasionally a circuit is required which will provide
constant output voltage regardless of line voltage changes.
Adding potentiometer P1, as shown in Figure 6.23, to the
circuits of Figures 6.20 and 6.22, will provide an approxi-
mate solution to this problem. The potentiometer is
adjusted to provide reasonably constant output over the
desired range of line voltage. As the line voltage increases,
so does the voltage on the wiper of P1 increasing VS and
thus the peak point voltage of the PUT. The increased peak
point voltage results in CT charging to a higher voltage and
thus taking more time to trigger. The additional delay
reduces the thyristor conduction angle and maintains the
average voltage at a reasonably constant value.
FEEDBACK CIRCUITS
The circuits described so far have been manual control
circuits; i.e., the power output is controlled by a
potentiometer turned by hand. Simple feedback circuits
may be constructed by replacing RT with heat or
light-dependent sensing resistors; however, these circuits
have no means of adjusting the operating levels. The
addition of a transistor to the circuits of Figures 6.20 and
6.22 allows complete control.
RD P1

6.8 k 500 RG1 5.1 k

(b). Inductive Load RT 100 k
RECTIFIED
LINE 2N6027
D1
Figure 6.21. Half Wave Controls with Switching for (FULL OR RG2 10 k
1N5250A
Full Wave Operation HALF WAVE) CT
0.1 µF 100 RGK TO THYRISTOR

GATE-CATHODE

LOAD Figure 6.23. Circuit for Line Voltage

900 W Compensation
RD

6.8 k RT 6.8 k
100 k R1 5.1 k
2W
2N6027 RD RT(MIN)
1N5250
10 k MAC12D Rs* 5.1 k
A 10 k
LINE D1 R2 RECTIFIED Q1
LINE 1N5250A MPS6512
CT R3 (FULL OR D1 2N6027
MDA920A4 0.1 µF 100 k HALF WAVE) 10 k
DALE Rc CT
PT50 100 k 0.1 µF 100 TO THYRISTOR
(OR EQUIVALENT)
GATE-CATHODE
*Rs SHOULD BE SELECTED TO BE ABOUT
3 k TO 5 k OHMS AT THE DESIRED OUTPUT LEVEL
Figure 6.22. A Simple Full Wave Trigger Circuit with
Typical Values for a 900 Watt Resistive Load Figure 6.24. Feedback Control Circuit

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Figure 6.24 shows a feedback control using a sensing gain. To solve this problem a dc amplifier could be inserted
resistor for feedback. The sensing resistor may respond to between the voltage divider and the control transistor gate
any one of many stimuli such as heat, light, moisture, to provide as close a control as desired. Other modifica-
pressure, or magnetic field. Rs is the sensing resistor and Rc tions to add multiple inputs, switched gains, ramp and
is the control resistor that establishes the desired operating pedestal control, etc., are all simple additions to add
point. Transistor Q1 is connected as an emitter follower sophistication.
such that an increase in the resistance of Rs decreases the
voltage on the base of Q1, causing more current to flow. MCR218-4
Current through Q1 charges CT, triggering the PUT at a
delayed phase angle. As Rs becomes larger, more charging RD 6.8 k T
DALE PT50 R1
current flows, causing the capacitor voltage to increase 100 k
RC (OR EQUIVALENT)
more rapidly. This triggers the PUT with less phase delay, AC
1k Q1 DC
LINE 2k MPS6512
boosting power to the load. When Rs decreases, less power LOAD
is applied to the load. Thus, this circuit is for a sensing 600 W
resistor which decreases in response to too much power in 1N5250A 2N6028 R2

3.9 k
C1
the load. If the sensing resistor increases with load power, 10 µF 30 k
T CT
then Rs and Rc should be interchanged. 0.1 µF
If the quantity to be sensed can be fed back to the circuit
in the form of an isolated, varying dc voltage such as the Figure 6.26. Half Wave, Average Voltage Feedback
output of a tachometer, it may be inserted between the
voltage divider and the base of Q1 with the proper polarity.
In this case, the voltage divider would be a potentiometer to RG T
adjust the operating point. Such a circuit is shown in 10 RG
MPS6512 R1
10
Figure 6.25. 100 k
MCR218-4
2k Q1
(2)
6.8 k 6.8 k
RD 2 W
R2
10 k RT(MIN) 2N6028
5.1 k TO 30 k
RECTIFIED
LINE 2N6027 THYRISTOR D1
Rc es 1N4003 DC
MPS6512 GATE- 1N5250A CT 10
100 k 10 k (2)

3.9 k
1N5250A CATHODE T 0.1 µF C1
µF
LOAD
R1
0.1 µF CT 100
1N4721 DALE PT50
(2) (OR EQUIVALENT)
Figure 6.25. Voltage Feedback Circuit AC LINE
Figure 6.27. Full Wave, Average Voltage
In some cases, average load voltage is the desired Feedback Control
feedback variable. In a half wave circuit this type of
feedback usually requires the addition of a pulse transform-
er, shown in Figure 6.26. The RC network, R1, R2, C1, CLOSED LOOP UNIVERSAL MOTOR SPEED
averages load voltage so that it may be compared with the CONTROL
set point on Rs by Q1. Full wave operation of this type of Figure 6.28 illustrates a typical tachometer stabilized
circuit requires dc in the load as well as the control circuit. closed feedback loop control using the TDA1285A inte-
Figure 6.27 is one method of obtaining this full wave grated circuit. This circuit operates off the ac line and
control. generates a phase angle varied trigger pulse to control the
Each SCR conducts on alternate half-cycles and supplies triac. It uses inductive or hall effect speed sensors, controls
pulsating dc to the load. The resistors (Rg) insure sharing motor starting acceleration and current, and provides a 1 to
of the gate current between the simultaneously driven 2% speed variation for temperature and load variations.
SCRs. Each SCR is gated while blocking the line voltage
every other half cycle. This momentarily increases reverse CYCLE CONTROL WITH OPTICALLY
blocking leakage and power dissipation. However, the ISOLATED TRIAC DRIVERS
leakage power loss is negligible due to the low line voltage In addition to the phase control circuits, TRIAC drivers
and duty cycle of the gate pulse. can also be used for ac power control by on-off or burst
There are, of course, many more sophisticated circuits control, of a number of ac cycles. This form of power
which can be derived from the basic circuits discussed control allows logic circuits and microprocessors to easily
here. If, for example, very close temperature control is control ac power with TRIAC drivers of both the zero-
desired, the circuit of Figure 6.24 might not have sufficient crossing and non zero-crossing varieties.

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 47 µF
VCC 1N4005 220 V
+ 10 k
C14 R1 Inductive
820 k
47 nF M TACHO
820 k
10 14 9 2 1
330 nF
16 TDA1285A
13
220 k 4 5 8 11 7 6 12 3
220 nF
22 k 0.1 µF
1.5 µF 10 NF C11 0.1 µF

1.0 MΩ C5 C7 2.2 k
R4 C4
100 nF 1.0 µF 220 nF
R3

Figure 6.28. (a). Motor Control Circuit

TDA1285A
NOTES:
Frequency to Voltage converter 6 12
—Max. motor speed 30,000 rpm
—Tachogenerator 4 pairs of poles: max. frequency =
30, 000
60
x 4 + 2 kHz HALL-
EFFECT M
—C11 = 680 pF. R4 adjusted to obtain VPin 4 = 12 V at max. speed: 68 kΩ 47 k SENSOR
—Power Supply
with Vmains = 120 Vac, R1 = 4.7 kΩ. Perfect operation (b). Circuit Modifications
will occur down to 80 Vac. to Connect a Hall-Effect Sensor

USING NON-ZERO CROSSING OPTICALLY switch wiring to be enclosed in conduit. By using a

ISOLATED TRIAC DRIVERS
USING THE MOC3011 ON 240 VAC LINES
The rated voltage of a MOC3011 is not sufficiently high
for it to be used directly on 240 V line; however, the
designer may stack two of them in series. When used this
way, two resistors are required to equalize the voltage
dropped across them as shown in Figure 6.29.
REMOTE CONTROL OF AC VOLTAGE
Local building codes frequently require all 115 V light
MOC3011, a TRIAC, and a low voltage source, it is
possible to control a large lighting load from a long
distance through low voltage signal wiring which is
completely isolated from the ac line. Such wiring usually is
not required to be put in conduit, so the cost savings in
installing a lighting system in commercial or residential
buildings can be considerable. An example is shown in
Figure 6.29. Naturally, the load could also be a motor, fan,
pool pump, etc.

+5V
150 180
LOAD

MOC3011 l 1M

240 Vac
MOC3011 l 1M

1k

Figure 6.29. Two MOC3011 TRIAC Drivers in Series to Drive 240 V TRIAC

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 NON-CONDUIT #22 WIRE 180

115 V
360
λ 2N6342A

MOC3011

5V

Figure 6.30. Remote Control of AC Loads Through Low Voltage Non-Conduit Cable

SOLID STATE RELAY
Figure 6.30 shows a complete general purpose, solid
state relay snubbed for inductive loads with input protec-
tion. When the designer has more control of the input and
output conditions, he can eliminate those components
which are not needed for his particular application to make
the circuit more cost effective.
INTERFACING MICROPROCESSORS TO 115 VAC
PERIPHERALS
The output of a typical microcomputer input-output
(I/O) port is a TTL-compatible terminal capable of driving
one or two TTL loads. This is not quite enough to drive the
MOC3011, nor can it be connected directly to an SCR or
TRIAC, because computer common is not normally
referenced to one side of the ac supply. Standard 7400
series gates can provide an input compatible with the
output of an MC6821, MC6846 or similar peripheral
interface adaptor and can directly drive the MOC3011. If
the second input of a 2 input gate is tied to a simple timing
circuit, it will also provide energization of the TRIAC only
at the zero crossing of the ac line voltage as shown in
Figure 6.32. This technique extends the life of incandes-
cent lamps, reduces the surge current strains on the TRIAC,
and reduces EMI generated by load switching. Of course,
zero crossing can be generated within the microcomputer
itself, but this requires considerable software overhead and
usually just as much hardware to generate the zero-crossing
timing signals.
APPLICATIONS USING THE ZERO CROSSING
TRIAC DRIVER
For applications where EMI induced, non-zero crossing-
load switching is a problem, the zero crossing TRIAC
driver is the answer. This TRIAC driver can greatly
simplify the suppression of EMI for only a nominal
increased cost. Examples of several applications using the
MOC3031, 41 follows.

150 180 2.4 k

λ 0.1 µF
2W 2N6071B
1N4002
MOC3011 115 V
2N3904

47 10 k

Figure 6.31. Solid-State Relay

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 200 W
+5 V
+5 V 7400 180

300 115 V
ADDRESS MC6820 MOC3011 (RESISTIVE
MC6800 OR 2N6071 LOAD)
OR MC6821
MC6802 OR MOTOR
300 180 2.4 k
MPU MC6846
115 V
DATA I/O MOC3011 0.1 µF
(INDUCTIVE
2N6071B LOAD)

1k OPTO TRIAC
6.3 V 5V DRIVERS
115 V
3k OPTIONAL
2N3904 ZERO-CROSSING
CIRCUITRY
100 k

Figure 6.32. Interfacing an M6800 Microcomputer System to 115 Vac Loads

MATRIX SWITCHING to a TRIAC on a horizontal line being switched on. Since

Matrix, or point-to-point switching, represents a method non-zero crossing TRIAC drivers have lower static dv/dt
of controlling many loads using a minimum number of ratings, this ramp would be sufficiently large to trigger the
components. On the 115 V line, the MOC3031 is ideal for device on.
this application; refer to Figure 6.33. The large static dv/dt R is determined as before:

+ Iin(pk)
rating of the MOC3031 prevents unwanted loads from V
being triggered on. This might occur, in the case of R (min)
TSM
+ 1.2 AV + 150 ohms
non-zero crossing TRIAC drivers, when a TRIAC driver
170
on a vertical line was subjected to a large voltage ramp due

150 Ω
LOAD LOAD LOAD
MOC
3031

150 Ω
LOAD LOAD LOAD
MOC
3031

150 Ω
LOAD LOAD LOAD
MOC
3031
MOC MOC MOC
3031 3031 3031
115 V
150 Ω 150 Ω 150 Ω

CONTROL BUS

Figure 6.33. Matrix Switching

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 300 Ω

MOC
CONTROL
3041

POWER 230 VAC

RELAY

LOAD

LOAD

LOAD

LOAD
(230 VAC COIL)

Figure 6.34. Power Relay Control

POWER RELAYS
The use of high-power relays to control the application
of ac power to various loads is a very widespread practice.
Their low contact resistance causes very little power loss
and many options in power control are possible due to their
multipole-multithrow capability. The MOC3041 is well
suited to the use of power relays on the 230 Vac line; refer
to Figure 6.34. The large static dv/dt of this device makes a
snubber network unnecessary, thus reducing component
count and the amount of printed circuit board space
required. A non-zero crossing TRAIC driver (MOC3021)
could be used in this application, but its lower static dv/dt
rating would necessitate a snubber network.
MICROCOMPUTER INTERFACE
The output of most microcomputer input/output (I/O)
ports is a TTL signal capable of driving several TTL gates.
This is insufficient to drive a zero-crossing TRIAC driver.
In addition, it cannot be used to drive an SCR or TRIAC
directly, because computer common is not usually refer-
enced to one side of the ac supply. However, standard 7400
NAND gates can be used as buffers to accept the output of
the I/O port and in turn, drive the MOC3031 and/or
MOC3041; refer to Figure 6.35.
The zero-crossing feature of these devices extends the
life of incandescent lamps, reduces inrush currents and
minimizes EMI generated by load switching.
AC MOTORS
The large static dv/dt rating of the zero-crossing TRIAC
drivers make them ideal when controlling ac motors.
Figure 6.36 shows a circuit for reversing a two phase motor
using the MOC3041. The higher voltage MOC3041 is
required, even on the 115 Vac line, due to the mutual and
self-inductance of each of the motor windings, which may
cause a voltage much higher than 115 Vac to appear across
the winding which is not conducting current.
DETERMINING LIMITING RESISTOR R FOR A
HIGH-WATTAGE INCANDESCENT LAMP
Many high-wattage incandescent lamps suffer shortened
lifetimes when switched on at ac line voltages other than
zero. This is due to a large inrush current destroying the
filament. A simple solution to this problem is the use of the
MOC3041 as shown in Figure 6.37. The MOC3041 may be
controlled from a switch or some form of digital logic.

+5 V 200 W
+5 V
7400 300 150 Ω

MOC 115 V
ADDRESS MC6820 3031 2N6071 (RESISTIVE
OR LOAD)
MC68000 MC6821
MOTOR
MPU OR 300 300 Ω
MC6846
DATA I/O MOC 230 V
3041 2N6073 (INDUCTIVE
LOAD)

1 kΩ
+5 V

Figure 6.35. M68000 Microcomputer Interface

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 MOTOR
OPTIONAL
CURRENT LIMITING RESISTOR
115 V
R
C
300 300

MOC MOC
3041 3041

Figure 6.36. Reversing Motor Circuit

The minimum value of R is determined by the maximum e. Zero Voltage Switching Output
surge current rating of the MOC3041 (ITSM): (Will Only Turn On Close to Zero Volts)
f. AC Output (50 or 60 Hz)
+
V in(pk)
R (min) Figure 6.38 shows the general format and waveforms of
I TSM
(10) the SSR. The input on/off signal is conditioned (perhaps
+
V in(pk)
only by a resistor) and fed to the Light-Emitting-Diode
1.2 A (LED) of an optoelectronic-coupler. This is ANDed with a

p
On a 230 Vac Line: go signal that is generated close to the zero-crossing of the
R (min) + 340 V + 283 ohms
1.2 A
(11)
line, typically 10 Volts. Thus, the output is not gated on
via the amplifier except at the zero-crossing of the line
In reality, this would be a 300 ohm resistor. voltage. The SSR output is then re-gated on at the
beginning of every half-cycle until the input on signal is
AC POWER CONTROL WITH SOLID-STATE removed. When this happens, the thyristor output stays on
RELAYS until the load current reaches zero, and then turns off.
The Solid-State Relay (SSR) as described below, is a
relay function with: ADVANTAGES AND DISADVANTAGES OF SSRs
a. Four Terminals (Two Input, Two Output) The SSR has several advantages that make it an
b. DC or AC Input attractive choice over its progenitor, the Electromechanical
c. Optical Isolation Between Input and Output Relay (EMR) although the SSR generally costs more than
d. Thyristor (SCR or TRIAC) Output its electromechanical counterpart. These advantages are:

LAMP

SWITCH OR MOC 300 230 V

DIGITAL LOGIC 3041

Figure 6.37. High-Wattage Lamp Control

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 ZERO CROSS
DETECTOR LOAD

GO/NO GO

POWER
INPUT LED AND
SWITCH
ON/OFF
AMPL

LINE 0
GO
NO GO
ON
OFF
OUTPUT
Figure 6.38. SSR Block Diagram
1. No Moving Parts — the SSR is all solid-state. There
are no bearing surfaces to wear, springs to fatigue,
assemblies to pick up dust and rust. This leads to sev-
eral other advantages.
2. No Contact Bounce — this in turn means no contact
wear, arcing, or Electromagnetic Interference (EMI)
associated with contact bounce.
3. Fast Operation — usually less than 10 µs. Fast turn-on
time allows the SSR to be easily synchronized with
line zero-crossing. This also minimizes EMI and can
greatly increase the lifetime of tungsten lamps, of con-
siderable value in applications such as traffic signals.
4. Shock and Vibration Resistance — the solid-state con-
tact cannot be “shaken open” as easily as the EMR
contact.
5. Absence of Audible Noise — this devolves from the
lack of moving mechanical parts.
6. Output Contact Latching — the thyristor is a latching
device, and turns off only at the load current zero-
crossing, minimizing EMI.
7. High Sensitivity — the SSR can readily be designed to
interface directly with TTL and CMOS logic, simplify-
ing circuit design.
8. Very Low Coupling Capacitance Between Input and
Output. This is a characteristic inherent in the optoelec-
tronic-coupler used in the SSR, and can be useful in
areas such as medical electronics where the reduction
of stray leakage paths is important.
LINE
This list of advantages is impressive, but of course, the
designer has to consider the following disadvantages:
1. Voltage Transient Resistance — the ac line is not
the clean sine wave obtainable from a signal generator.
Superimposed on the line are voltage spikes from
motors, solenoids, EMRs (ironical), lightning, etc. The
solid-state components in the SSR have a finite voltage
rating and must be protected from such spikes, either
with RC networks (snubbing), zener diodes, MOVs or
selenium voltage clippers. If not done, the thyristors
will turn on for part of a half cycle, and at worst, they
will be permanently damaged, and fail to block volt-
age. For critical applications a safety margin on voltage
of 2 to 1 or better should be sought.
The voltage transient has at least two facets — the first
is the sheer amplitude, already discussed. The second is
its frequency, or rate-of-rise of voltage (dv/dt). All thyris-
tors are sensitive to dv/dt to some extent, and the transient
must be snubbed, or “soaked up,” to below this level with
an RC network.(1) Typically this rating (“critical” or
“static” dv/dt) is 50 to 100 V/µs at maximum tempera-
ture. Again the failure mode is to let through, to a half-
cycle of the line, though a high energy transient can cause
permanent damage. Table 6.1 gives some starting points
for snubbing circuit values. The component values
required depend on the characteristics of the transient,
which are usually difficult to quantify. Snubbing across
the line as well as across the SSR will also help.
Table 6.1. Typical Snubbing Values
Load Current Resistance Capacitance
A rms Ω µF
5 47 0.047
10 33 0.1
25 10 0.22
40 22 0.47
1. For a more thorough discussion of snubbers, see page 45.

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 +
+
INPUT LOAD
R11
R1 C1 R2 R4 R6

SCR1
R13
OC1 Q1 Q2 BR TR11
11
D2
C11
R7
D1 R12
C2 R5

R3
–
–
LINE
INPUT AND CONTROL CIRCUIT TRIAC POWER CIRCUIT

Figure 6.39 (a). TRIAC SSR Circuit

2. Voltage Drop — The SSR output contact has some CONTROL CIRCUIT OPERATION
offset voltage — approximately 1 V, depending on cur- The operation of the control circuit is straightforward.
rent, causing dissipation. As the thyristor has an operat- The AND function of Figure 6.38 is performed by the
ing temperature limit of +125°C, this heat must be wired-NOR collector configuration of the small-signal
removed, usually by conduction to air via a heat sink or transistors Q1 and Q2. Q1 clamps the gate of SCR1 if
the chassis. optoelectronic-coupler OC1 is off. Q2 clamps the gate if
3. Leakage Current — When an EMR is open, no current there is sufficient voltage at the junction of the potential
can flow. When an SSR is open however, it does not divider R4,R5 to overcome the VBE of Q2. By judicious
have as definite an off condition. There is always some selection of R4 and R5, Q2 will clamp SCR1’s gate if more
current leakage through the output power switching than approximately 5 Volts appear at the anode of SCR1;
thyristor, the control circuitry, and the snubbing net- i.e., Q2 is the zero-crossing detector.
work. The total of this leakage is usually 1 to 10 mA
rms — three or four orders of magnitude less than the Table 6.2. Control Circuit Parts List
on-state current rating. Line Voltage
4. Multiple Poles — are costly to obtain in SSRs, and
Part 120 V rms 240 V rms
three phase applications may be difficult to implement.
5. Nuclear Radiation — SSRs will be damaged by C1 220 pF,
F, 20%, 200 Vdc 100 pF,
F, 20%, 400 Vdc
nuclear radiation. C2 0.022 µµF, 20%, 50 Vdc 0.022 µF,
µ 20%, 50 Vdc
D1 1N4001 1N4001
D2 1N4001 1N4001
OC1 MOC1005 MOC1005
TRIAC SSR CIRCUIT Q1 MPS5172 MPS5172
Q2 MPS5172 MPS5172
Many SSR circuits use a TRIAC as the output switching R1 1 kΩ, 10%, 1 W 1 kΩ, 10%, 1 W
device. Figure 6.39(a) shows a typical TRIAC SSR circuit. R2 47 kΩ,, 5%,, 1/2 W 100 kΩ,, 5%,, 1 W
The control circuit is used in the SCR relay as well, and is R3 1 MΩ, 10%, 1/4 W 1 MΩ, 10%, 1/4 W
R4 110 kΩ, 5%, 1/2 W 220 kΩ, 5%, 1/2 W
defined separately. The input circuit is TTL compatible. R5 15 kΩ,
kΩ 5%5%, 1/4 W 15 kΩ,
kΩ 5%5%, 1/4 W
Output snubbing for inductive loads will be described later. R6 33 kΩ,
kΩ 10%,
10% 1/2 W 68 kΩ
kΩ, 10%
10%, 1 W
A sensitive-gate SCR (SCR1) is used to gate the power R7 10 kΩ
kΩ, 10%
10%, 1/4 W 10 kΩ 10% 1/4 W
kΩ, 10%,
TRIAC, and a transistor amplifier is used as an interface SCR1 2N5064 2N6240
between the optoelectronic-coupler and SCR1. (A sensi-
tive-gate SCR and a diode bridge are used in preference to If OC1 is on, Q1 is clamped off, and SCR1 can be turned
a sensitive gate TRIAC because of the higher sensitivity of on by current flowing down R6, only if Q2 is also off —
the SCR.) which it is only at zero crossing.

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 VSCR1

CROSSING
LINE ZERO
(b)

“ZERO” VOLTAGE
FIRING LEVEL
E

(c)

FIRING
WINDOW
WITHOUT FIRING
C1 AND C2 WINDOW

(d)

FIRING
WINDOW
WITH
FIRING WINDOW
C1 AND C2

Figure 6.39. Firing Windows

The capacitors are added to eliminate circuit race
conditions and spurious firing, time ambiguities in
operation. Figure 6.39(b) shows the full-wave rectified
line that appears across the control circuit. The zero
voltage firing level is shown in 6.39(b) and 6.39(c),
expanded in time and voltage. A race condition exists
on the up-slope of the second half-cycle in that SCR1
may be triggered via R6 before Q1 has enough base
current via R2 to clamp SCR1’s gate. C1 provides
current by virtue of the rate of change of the supply
voltage, and Q1 is turned on firmly as the supply voltage
starts to rise, eliminating any possibility of unwanted
firing of the SSR; thus eliminating the race condition.
This leaves the possibility of unwanted firing of the
SSR on the down-slope of the first half cycle shown. C2
provides a phase shift to the zero voltage potential
divider, and Q2 is held on through the real zero-cross-
ing. The resultant window is shown in 6.39(d).
CONTROL CIRCUIT COMPONENTS
The parts list for the control circuit at two line
voltages is shown in Table 6.2.
R1 limits the current in the input LED of OC1. The
input circuit will function over the range of 3 to 33 Vdc.
D1 provides reverse voltage protection for the input
of OC1.

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 D2 allows the gate of SCR1 to be reverse biased,
providing better noise immunity and dv/dt performance.
R7 eliminates pickup on SCR1’s gate through the
zero-crossing interval.
SCR1 is a sensitive gate SCR; the 2N5064 is a TO-92
device, the 2N6240 is a Case 77 device.
Alternatives to the simple series resistor (R1) input
circuit will be described later.
POWER CIRCUIT COMPONENTS
The parts list for the TRIAC power circuit in
Figure 6.39(a) is shown in Table 6.3 for several rms
current ratings, and two line voltages. The metal TRIACs
are in the half-inch pressfit package in the isolated stud
configuration; the plastic TRIACs are in the TO-220
Thermowatt package. R12 is chosen by calculating the
peak control circuit off-state leakage current and ensuring
that the voltage drop across R12 is less than the VGT(MIN)
of the TRIAC.
C11 must be an ac rated capacitor, and with R13 provides
some snubbing for the TRIAC. The values shown for this
network are intended more for inductive load commutating
dv/dt snubbing than for voltage transient suppression.
Consult the individual data sheets for the dissipation,
temperature, and surge current limits of the TRIACs.

Table 6.3. TRIAC Power Circuit Parts List

Voltage 120 V rms 240 V rms

rms Current Amperes 8 12 25 40 8 12 25 40
BR11 IN4004(4) IN4004(4) IN4004(4) IN4004(4) IN4004(4) IN4004(4) IN4004(4) IN4004(4)
C11, µF 0.047 0.047 0.1 0.1 0.047 0.047 0.1 0.1
(10%, line voltage ac
rated)
R11 39 39 39 39 39 39 39 39
(10%, 1 W)
R12 18 18 18 18 18 18 18 18
(10%, 1/2 W)
R13 620 620 330 330 620 620 330 330
(10%, 1/2 W)

TR11 Plastic 2N6344 2N6344A — — 2N6344 2N6344A — —

TRIACs AND INDUCTIVE LOADS
The TRIAC is a single device which to some extent is the
equivalent of two SCRs inverse parallel connected; cer-
tainly this is so for resistive loads. Inductive loads however,
can cause problems for TRIACs, especially at turn-off.
A TRIAC turns off every line half-cycle when the line
current goes through zero. With a resistive load, this
coincides with the line voltage also going through zero.
The TRIAC must regain blocking-state before there are
more than 1 or 2 Volts of the reverse polarity across it — at
120 V rms, 60 Hz line this is approximately 30 µs. The
TRIAC has not completely regained its off-state character-
istics, but does so as the line voltage increases at the 60 Hz
rate.
Figure 6.40 indicates what happens with an inductive or
lagging load. The on signal is removed asynchronously and
the TRIAC, a latching device, stays on until the next
current zero. As the current is lagging the applied voltage,
the line voltage at that instant appears across the TRIAC. It
is this rate-of-rise of voltage, the commutating dv/dt, that
must be limited in TRIAC circuits, usually to a few volts
per microsecond. This is normally done by use of a snubber
network RS and CS as shown in Figure 6.41.
SCRs have less trouble as each device has a full
half-cycle to turn off and, once off, can resist dv/dt to the
critical value of 50 to 100 V/µs.
CHOOSING THE SNUBBING COMPONENTS(1)
There are no easy methods for selecting the values of RS
and CS in Figure 6.41 required to limit commutating dv/dt.
The circuit is a damped tuned circuit comprised by RS, CS,
RL and LL, and to a minor extent the junction capacitance
of the TRIAC. At turn-off this circuit receives a step
impulse of line voltage which depends on the power factor
of the load. Assuming the load is fixed, which is normally
the case, the designer can vary RS and CS. CS can be
increased to decrease the commutating dv/dt; RS can be
increased to decrease the resonant over-ring of the tuned
circuit — to increase damping. This can be done empiri-
cally, beginning with the values for C11 and R13 given in
Table 6.3, and aiming at close to critical damping and the
data sheet value for commutating dv/dt. Reduced tempera-
tures, voltages, and off-going di/dt (rate-of-change of
current at turn-off) will give some safety margin.
1. For a more thorough discussion of snubbers, see page 45.

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 ON
ON/OFF
SIGNAL OFF

LOAD CURRENT
0
(LAGGING LOAD)
LINE VOLTAGE dv/dt

LINE AND 0
TRIAC VOLTAGE
TRIAC VOLTAGE

Figure 6.40. Commutating dv/dt

Table 6.4. SCR Power Circuit Parts List

Voltage 120 V rms 240 V rms

rms Current Amperes 5 11 22 49 5 11 22 49
C21 (10%, line voltage ac rated) SEE TEXT
D21-24 1N4003 1N4003 1N4003 1N4003 1N4004 1N4004 1N4004 1N4004
R21 (10%, 1 W) 39 39 39 39 39 39 39 39
R22, 23 (10%, 1/2 W) 18 18 18 18 18 18 18 18
R24 SEE TEXT
SCR21 22
SCR21, Plastic 2N6240 2N6397 2N6402 — 2N6240 2N6397 2N6403 —

commutating dv/dt. Other advantages are the improved

LL LOAD
thermal and surge characteristics of having two devices; the
disadvantage is increased cost.
The SCR power circuit can use the same control circuit as
RL the TRIAC Circuit shown in Figure 6.39(a). In Figure 6.42,
for positive load terminal and when the control circuit is
gated on, current flows through the load, D21, R21, SCR1,
RS D22, the gate of SCR21 and back to the line, thus turning on
CS SCR21. Operation is similar for the other line polarity. R22
and R23 provide a path for the off-state leakage of the
control circuit and are chosen so that the voltage dropped
across them is less than the VGT(MIN) of the particular SCR.
R24 and C21 provide snubbing and line transient suppres-
Figure 6.41. TRIAC with Snubber Network
sion, and may be chosen from Table 6.4 or from the C11,
R13 rows of Table 6.3. The latter values will provide less
SCR SSR CIRCUIT transient protection but also less off-state current, with the
The inverse parallel connected Silicon Controlled Recti- capacitor being smaller. Other circuit values are shown in
fier (SCR) pair (shown in Figure 6.42) is less sensitive to Table 6.46.

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 LOAD
D21
R23

D24

R21
+ +
CONTROL R24 SCR22
CIRCUIT
INPUT
(SEE FIGURE 6.39(a) SCR21
AND TABLE 6.II) D22 C21
– –

R22

D23
LINE

Figure 6.42. SCR SSR Circuit

Consult the individual data sheets for packages and
dissipation, temperature, and surge current limits.
While the SCRs have much higher dv/dt commutation
ability, with inductive loads, attention should be paid to
maintaining the dv/dt below data sheet levels.
ALTERNATE INPUT CIRCUITS
adequately over 3 to 33 Vdc and – 40 to +100°C. Note that
though the SSR is protected against damage from improp-
erly connected inputs, the external circuit is not, as D31
acts as a bypass for a wrongly connected input driver.
+
OC1

CMOS COMPATIBLE
The 1 kΩ resistor, R1, shown in Figure 6.39(a) and
R31
Table 6.2, provide an input that is compatible with the 330 k
current that a TTL gate output can sink. The resistor R1
must be changed for CMOS compatibility, aiming at 2 mA
in the LED for adequate performance to 100°C. At 2 mA INPUT
do not use the CMOS output for any other function, as a
LOGIC 0 or 1 may not be guaranteed. Assume a forward Q32
voltage drop of 1.1 V for the LED, and then make the D31
1N4001
Ohm’s Law calculation for the system dc supply voltage, 2N6427
thus defining a new value for R1.
Q31
MPS5172
TTL/CMOS COMPATIBLE R32
TH31 WESTERN THERMISTOR 330
To be TTL compatible at 5 Volts and CMOS compatible
CORP., CURVE 2,
over 3 to 15 Volts, a constant current circuit is required, 650 Ω ± 10% @ 25°C
such as the one in Figure 6.43. The current is set by the VBE P/N2C6500 OR
of Q31 and the resistance of the R32, R33, and thermistor EQUIVALENT R33
TH31 network, and is between 1 and 2 mA, higher at high 180
temperatures to compensate for the reduced transmission TH31
efficiency of optoelectronic-couplers at higher tempera- –
ture. The circuit of Figure 6.43 gives an equivalent
impedance of approximately 50 kΩ. The circuit performs Figure 6.43. TTL/CMOS Compatible Input

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AC LINE COMPATIBLE
To use SSRs as logic switching elements is inefficient,
considering the availability and versatility of logic
families such as CMOS. When it is convenient to trigger
from ac, a circuit such as shown in Figure 6.44 may be
used. The capacitor C41 is required to provide current to
the LED of OC1 through the zero-crossing time. An
in-phase input voltage gives the worst case condition. The
circuit gives 2 mA minimum LED current at 75% of
nominal line voltage.
INVERSE PARALLEL SCRs FOR POWER
CONTROL
TRIACs are very useful devices. They end up in solid
state relays, lamp drivers, motor controls, sensing and
detection circuits; just about any industrial full-wave
application. But in high-frequency applications or those
requiring high voltage or current, their role is limited by
their present physical characteristics, and they become very
expensive at current levels above 40 amperes rms.
SCRs can be used in an inverse-parallel connection to
bypass the limitations of a TRIAC. A simple scheme for
doing this is shown in Figure 6.45. The control device can
take any of many forms, shown is the reed relay (Fig-
ure 6.45). TRIACs and Opto couplers can be inserted at
point A–A to replace the reed relay.

2 kΩ, 10%
R42
1/2 W
R41
C41 2 µF
R41
10%
BR41 50 V 120 V 22 kΩ, 10%, 1 W
OC1 240 V 47 kΩ, 10%, 2 W
INPUT AC

Figure 6.44. AC Compatible Input

Compared to a TRIAC, an inverse-parallel configuration
has distinct advantages. Voltage and current capabilities are
dependent solely on SCR characteristics with ratings today
of over a thousand volts and several hundred amps.
Because each SCR operates only on a half-wave basis, the
system’s rms current rating is Ǹ2 times the SCR’s rms
current rating (see Suggested SCR chart). The system has
the same surge current rating as the SCRs do. Operation at
400 Hz is also no problem. While turn-off time and dv/dt
limits control TRIAC operating speed, the recovery
characteristics of an SCR need only be better than the
appropriate half-wave period.

FLOATING
LOAD RL

q ǸI2GPV * (RL ) RC)

IG1
ILa
R
IG
SCR1 1 2
WHERE IGP IS b 2V OR
PEAK GATE a A A
CURRENT RC R SCR2
RATING OF SCR
CONTROL DEVICE
(CLOSED RESISTANCE)
GROUNDED IG2 ILb
LOAD RL

Figure 6.45. Use of Inverse Parallel SCRs

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 With inductive loads you no longer need to worry about
commutating dv/dt, either. SCRs only need to withstand
static dv/dt, for which they are typically rated an order of
magnitude greater than TRIACs are for commutating dv/dt.
Better reliability can be achieved by replacing the reed
relay with a low current TRIAC to drive the SCRs,
although some of its limitations come with it. In the
preferred circuit of Figure 6.46(b), the main requirements
of the TRIAC are that it be able to block the peak system
voltage and that it have a surge current rating compatible
with the gate current require-ments of the SCRs. This is
normally so small that a TO-92 cased device is adequate to
drive the largest SCRs.
In circuits like Figure 6.45, the control devices
alternately pass the gate currents IG1 and IG2 during the
“a” and “b” half cycles, respectively. ILa and ILb are the
load currents during the corresponding half cycles. Each
SCR then gets the other half cycle for recovery time. Heat
sinking can also be done more efficiently, since power is
being dissipated in two packages, rather than all in one.
The load can either be floated or grounded. the SCRs are
not of the shunted-gate variety, a gate-cathode resistance
should be added to shunt the leakage current at
higher temperatures. The diodes act as steering diodes so
the gate-cathode junctions are not avalanched. The
blocking capability of the diodes need only be as high as
the VGT of the SCRs. A snubber can also be used if
conditions dictate.

A A A A A A

GATE
CONTROL GATE
GATE
CONTROL
CONTROL
(FLOATING)

(a). Reed Relay (b). Low-Current TRIAC (c). Optically Coupled TRIAC Driver

Figure 6.46. Control Devices

This circuit offers several benefits. One is a considerable
increase in gain. This permits driving the TRIAC with
almost any other semiconductors such as linear ICs,
photosensitive devices and logic, including MOS. If
necessary, it can use an optically coupled TRIAC driver to
isolate (up to 7500 V isolation) delicate logic circuits from
the power circuit (see Figure 6.46(c)). Table 6.6. lists
suggested components. Another benefit is being able to
gate the TRIAC with a supply of either polarity. Probably
the most important benefit of the TRIAC/SCR combination
is its ability to handle variable-phase applications — nearly
impossible for non solid-state control devices.

Table 6.6. Driver TRIACs

Gate Negative Or
Line Gate Optically
In Phase With
Voltage Positive Coupled
Line Voltage
120 MAC97A4 MAC97A4 MOC3030*, 3011
220 MAC97A6 MAC97A6 MOC3020, MOC3021

*Includes inhibit circuit for zero crossover firing.

INTERFACING DIGITAL CIRCUITS TO
THYRISTOR CONTROLLED AC LOADS
Because they are bidirectional devices, TRIACs are the
most common thyristor for controlling ac loads. A TRIAC
can be triggered by either a positive or negative gate signal
on either the positive or negative half-cycle of applied MT2
voltage, producing four quadrants of operation. However,
the TRIAC’s trigger sensitivity varies with the quadrant,
with quadrants II and III (gate signal negative and MT2
either positive or negative) being the most sensitive and
quadrant IV (gate positive, MT2 negative) the least
sensitive.
For driving a TRIAC with IC logic, quadrants II and III
are particularly desirable, not only because less gate trigger
current is required, but also because IC power dissipation is
reduced since the TRIAC can be triggered by an “active
low” output from the IC.

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 There are other advantages to operating in quadrants II
and III. Since the rate of rise of on-state current of a TRIAC
(di/dt) is a function of how hard the TRIAC’s gate is turned
on, a given IC output in quadrants II and III will produce a
greater di/dt capability than in the less sensitive quadrant
IV. Moreover, harder gate turn-on could reduce di/dt
failure. One additional advantage of quadrant II and III
operation is that devices specified in all four quadrants are
generally more expensive than devices specified in quad-
rants I, II and III, due to the additional testing involved and
the resulting lower yields.
TTL-TO-THYRISTOR INTERFACE
The subject of interfacing requires a knowledge of the
output characteristics of the driving stages as well as the
input requirements of the load. This section describes the
driving capabilities of some of the more popular TTL
circuits and matches these to the input demands of
thyristors under various practical operating conditions.

USING TRIACs A

Two important thyristor parameters are gate trigger

current (IGT) and gate trigger voltage (VGT).
LOAD
IGT (Gate Trigger Current) is the amount of gate trigger
current required to turn the device on. IGT has a negative 60 Hz
MT2
LINE
temperature coefficient — that is, the trigger current
required to turn the device on increases with decreasing MT1
temperature. If the TRIAC must operate over a wide GATE
temperature range, its IGT requirement could double at the VOLTAGE
APPLIED B
low temperature extreme from that of its 25°C rating. TO TERMINALS TRIAC
It is good practice, if possible, to trigger the thyristor A AND B CURRENT
with three to ten times the IGT rating for the device. This
increases its di/dt capability and ensures adequate gate
trigger current at low temperatures.
VGT (Gate Trigger Voltage) is the voltage the thyristor
gate needs to ensure triggering the device on. This voltage A
is needed to overcome the input threshold voltage of the
device. To prevent thyristor triggering, gate voltage should t1 t2
be kept to approximately 0.4 V or less.
Like IGT, VGT increases with decreasing temperature. IGT

TRIAC
INDUCTIVE LOAD SWITCHING VOLTAGE
WITH SNUBBER CHANGE IN
Switching of inductive loads, using TRIACs, may TRIAC VOLTAGE DURING
NETWORK
require special consideration in order to avoid false TURN-OFF (dv)
triggering. This false-trigger mechanism is illustrated in
Figure 6.47 which shows an inductive circuit together with toff(dt)
the accompanying waveforms. TRIAC
As shown, the TRIAC is triggered on, at t1, by the VOLTAGE
positive gate current (IGT). At that point, TRIAC current WITH SNUBBER
flows and the voltage across the TRIAC is quite low since NETWORK
the TRIAC resistance, during conduction, is very low.
From point t1 to t2 the applied IGT keeps the TRIAC in a
UNDESIRED TRIGGERING
conductive condition, resulting in a continuous sinusoidal DUE TO FEEDBACK
current flow that leads the applied voltage by 90° for this
pure inductive load.
At t2, IGT is turned off, but TRIAC current continues to Figure 6.47. Inductive Load TRIAC Circuit and
flow until it reaches a value that is less than the sustaining Equivalent Waveforms
current (IH), at point A. At that point, TRIAC current is cut
off and TRIAC voltage is at a maximum. Some of that
voltage is fed back to the gate via the internal capacitance
(from MT2 to gate) of the TRIAC.

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TTL CIRCUITS WITH TOTEM-POLE OUTPUTS VCC VCC
(e.g. 5400 SERIES) LOAD
SOURCE
The configuration of a typical totem-pole connected TTL CURRENT
CONNECTION
R2
output stage is illustrated in Figure 6.48(a). This stage is SINK FOR
100
R1 CURRENT
capable of “sourcing” current to a load, when the load is CURRENT
1.4 k Q2 SINK
connected from Vout to ground, and of “sinking” current CONDITION
from the load when the latter is connected from Vout to Vin
VCC. If the load happens to be the input circuit of a TRIAC TTL
Q1 Vout
GATE LOAD
(gate to MT1), the TRIAC will be operating in quadrants I
CONNECTION
and IV (gate goes positive) when connected from Vout to Q3
FOR
ground, and of “sinking” II and III (gate goes negative) CURRENT
when connected from Vout to VCC. 1k
SOURCE
CONDITION
QUADRANT I-IV OPERATION
Considering first the gate-positive condition,
Figure 6.48(b), the operation of the circuit is as follows:
When Vin to the TTL output stage is low (logical “zero”),
Vin
transistors Q1 and Q3 of that stage are cut off, and Q2 is
conducting. Therefore, Q2 sources current to the thyristor,
and the thyristor would be triggered on during the Vin = 0 Vout
condition.
When Vin goes high (logical “one”), transistors Q1 and SOURCE
Q3 are on and Q2 is off. In this condition depicted by the CURRENT
equivalent circuit transistor Q3 is turned on and its SINK CURRENT
collector voltage is, essentially, VCE(sat). As a result, the (a)
TRIAC is clamped off by the low internal resistance of Q3. VCC
QUADRANT II-III OPERATION
When the TRIAC is to be operated in the more sensitive
R1 R2
quadrants II and III (negative-gate turn-on), the circuit in TRIAC
Figure 6.49(a) may be employed. LOAD
With Q3 in saturation, as shown in the equivalent circuit Q2
60 Hz
of 6.49(b), its saturation voltage is quite small, leaving
virtually the entire – VEE voltage available for thyristor
turn-on. This could result in a TRIAC gate current that
exceeds the current limit of Q3, requiring a current-limiting Vout
series resistor, (R(Iim)). GATE
When the Vout level goes high, Q3 is turned off and Q2 MT1
becomes conductive. Under those conditions, the TRIAC
gate voltage is below VGT and the TRIAC is turned off. (b)

DIRECT-DRIVE LIMITATIONS
With sensitive-gate TRIACs, the direct connection of a R1
TRIAC to a TTL circuit may sometimes be practical. TRIAC
LOAD
However, the limitations of such circuits must be
recognized. Q1 60 Hz
Vout
For example:
Q3
For TTL circuits, the “high” logic level is specified as
2.4 volts. In the circuit of Figure 6.48(a), transistor Q2 is 1k
capable of supplying a short-circuit output current (ISC) of
20 to 55 mA (depending on the tolerances of R1 and R2,
and on the hFE of Q2). Although this is adequate to turn a (c)
sensitive-gate TRIAC on, the specified 2.4 volt (high) logic
Figure 6.48. Totem-Pole Output Circuit TTL Logic,
level can only be maintained if the sourcing current is held Together with Voltage and Current Waveforms,
to a maximum of 0.4 mA — far less than the current (b) Equivalent Circuit for Triggering TRIAC with a
required to turn on any thyristor. Thus, the direct connec- Positive Voltage — TRIAC-On Condition,
tion is useful only if the driver need not activate other logic (c) TRIAC-Off Condition
circuits in addition to a TRIAC.

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 A similar limiting condition exists in the Logic “0” In practice, a 270 Ω, 1/4 W resistor may be used.
condition of the output, when the thyristor is to be clamped
off. In this condition, Q3 is conducting and Vout equals the
saturation voltage (VCE(sat)) of Q3. TTL specifications R(lim) MT1
indicate that the low logic level (logic “0”) may not exceed
0.4 volts, and that the sink current must be limited to 16 LOGIC CIRCUIT
mA in order not to exceed this value. A higher value of sink 60 Hz
current would cause (VCE(sat)) to rise, and could trigger the MT2 LINE
thyristor on.
LOAD
CIRCUIT DESIGN CONSIDERATIONS
Where a 5400-type TTL circuit is used solely for
controlling a TRIAC, with positive-gate turn-on (quadrants (a)
I-IV), a sensitive gate TRIAC may be directly coupled to –5V
the logic output, as in Figure 6.48. If the correct logic levels
must be maintained, however, a couple of resistors must be Isink
added to the circuit, as in Figure 6.50(a). In this diagram, R1
R1 is a pull-up which allows the circuit to source more Vout MT1
current during a high logical output. Its value must be large R(lim)
enough, however, to limit the sinking current below the Q1 60 Hz
16 mA maximum when Vout goes low so that the logical LINE
VEE(sat) MT2
zero level of 0.4 volts is not exceeded. Q3
0.4 V MAX
Resistor R2, a voltage divider in conjunction with R1,
insures VOH (the “high” output voltage) to be 2.4 V or 1k LOAD
greater.
For a supply voltage of 5 V and a maximum sinking
current of 16 mA –5V (b)
R1 q VCCń16 mA q 5ń0.016 q 312 W
Figure 6.49. TTL Circuit for Quadrant II and III TRIAC
Thus, 330 Ω, 1/4 W resistor may be used. Assuming R1 to Operation Requiring Negative VGT, (b) Schematic
be 330 Ω and a thyristor gate on voltage (VGT) of 1 V, the Illustrates TRIAC Turn-On Condition,
equivalent circuit of Figure 6.49(b) exists during the log- Vout = Logical “0”
ical “1” output level. Since the logical “1” level must be
maintaned at 2.4 volts, the voltage drop across R2 must be
1.4 V. Therefore, VCC VCC
R2 + 1.4ńIR + 1.4ńVR ńR + 1.4ń(2.6ń3.30) ` 175 W
1 2
A 180 Ω resistor may be used for R2. If the VGT is less LOAD R1
than 1 volt, R2 may need to be larger.
The MAC97A and 2N6071A TRIACs are compatible 60 Hz
MT2 Vout = 2.4 V
devices for this circuit arrangement, since they are R1 LINE
guaranteed to be triggered on by 5 mA, whereas the current
Vout R2
through the circuit of Figure 6.50(b) is approximately
8 mA, (V R R 1).
1
ń MT1
R2

LOGIC CIRCUIT
When the TRIAC is to be turned on by a negative gate
voltage, as in Figure 6.49(b), the purpose of the limiting G=1V
resistor R(Iim) is to hold the current through transistor Q3 to (a) (b)
16 mA. With a 5 V supply, a TRIAC VGT of 1 V and a
maximum sink current of 16 mA Figure 6.50. Practical Direct-Coupled TTL

+ (VCC–VGT)ńIsink + (5–1)(0.016q250 W
TRIAC Circuit, (b) Equivalent Circuit Used for
R Calculation of Resistor Values
(lim)

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OPEN COLLECTOR TTL CIRCUIT Circuits utilizing Schottky TTL are generally designed in
The output section of an open-collector TTL gate is the same way as TTL circuits, although the current
shown in Figure 6.51(a). source/sink capabilities may be slightly different.
A typical logic gate of this kind is the 5401 type
Q2-input NAND gate circuit. This logic gate also has a
maximum sink current of 16 mA (VOL = 0.4 V max.)
G MT1
because of the Q1 (sat) limitations. If this logic gate is to
source any current, a pull-up-collector resistor, R1 (6.51b)
is needed. When this TTL gate is used to trigger a thyristor, R2

[
R1 should be chosen to supply the maximum trigger current
available from the TTL circuit ( 16 mA, in this case).
The value of R1 is calculated in the same way and for the
same reasons as in Figure 6.50. If a logical “1” level must
be maintained at the TTL output (2.4 V min.), the entire
circuit of Figure 6.50 should be used.
For direct drive (logical “0”) quadrants II and III
triggering, the open collector, negative supplied ( – 5 V)
TTL circuit of Figure 6.52 can be used. Resistor R1 can
have a value of 270 Ω, as in Figure 6.49. Resistor R2
ensures that the TRIAC gate is referenced to MT1 when the
TTL gate goes high (off), thus preventing unwanted
turn-on. An R2 value of about 1 k should be adequate for
sensitive gate TRIACs and still draw minimal current.
VCC
1.4 k
TTL
GATE
Q1
1k
(a)
MT2
60 Hz
LINE
R1
LOGIC CIRCUIT LOAD
–5V
Figure 6.52. Negative-Supplied ( –5 V) TTL Gate
Permits TRIAC Operation in Quadrants II and III
TRIGGERING THYRISTORS FROM LOGIC GATES
USING INTERFACE TRANSISTORS
For applications requiring thyristors that demand more
gate current than a direct-coupled logic circuit can supply,
an interface device is needed. This device can be a
small-signal transistor or an opto coupler.
The transistor circuits can take several different configu-
rations, depending on whether a series or shunt switch
design is chosen, and whether gate-current sourcing
(quadrants I and IV) or sinking (quadrants II and III) is
Vout
selected. An example of a series switch, high output (logic
1) activation, is shown in Figure 6.53. Any logic family can
be used as long as the output characteristics are known.
The NPN interface transistor, Q1, is configured in the
common-emitter mode — the simplest approach — with
the emitter connected directly to the gate of the thyristor.

5V VCC

LOAD

LOAD
60 Hz
MT2
R1 LINE
R1 R4 MT2
Vout 60 Hz
G
R2 LINE
MT1 Q1
LOGIC CIRCUIT
LOGIC GATE G MT1
(b) R3 R5

Figure 6.51. Output Section of Open-Collector TTL,

(b) For Current Sourcing, A Pull-up Resistor, R1, Figure 6.53. Series Switch, High Output (Logic “1”)
Must Be Added

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 Depending on the logic family used, resistor R1 (pull-up When thyristor operation in quadrants II and III is
resistor) and R3 (base-emitter leakage resistor) may or may desired, the circuits of Figures 6.55 and 6.56 can be used;
not be required. If, for example, the logic is a typical TTL Figure 6.55 is for high logic output activation and
totem-pole output gate that must supply 5 mA to the base of Figure 6.56 is for low. Both circuits are similar to those on
the NPN transistor and still maintain a “high” (2.4 V) logic Figures 6.53 and 6.54, but with the transistor polarity and
output, then R1 and R2 are required. If the “high” logic power supplies reversed.
level is not required, then the TTL circuit can directly
source the base current, limited by resistor R2. +5V
To illustrate this circuit, consider the case where the
selected TRIAC requires a positive-gate current of
100 mA. The interface transistor, a popular 2N4401, has a LOAD
specified minimum hFE (at a collector current of 150 mA)
R2
of 100. To ensure that this transistor is driven hard into MT2
saturation, under “worse case” (low temperature) condi- 60 Hz
R1 LINE
tions, a forced hFE of 20 is chosen — thus, 5 mA of base
Q1 R3
current. For this example, the collector supply is chosen to
be the same as the logic supply (+5 V); but for the circuit LOGIC GATE G MT1
configuration, it could be a different supply, if required. R4
The collector-resistor, R4, is simply

R4 + (VCC * VCE(sat) * VGT(typ))ńIGT Figure 6.54. Low-Logic Activation with

+ (5 * 1 * 0.9)ń100 mA + 40 W Interface Transistor

A 39 ohm, 1 W resistor is then chosen, since its actual

dissipation is about 0.4 W.
R1 R5
If the “logic 1” output level is not important, then the MT1
R4 G
base limiting resistor R2 is required, and the pull-up R2
resistor R1 is not. Since the collector resistor of the TTL Q1
upper totem-pole transistor, Q2, is about 100 Ω, this LOGIC GATE 60 Hz
resistor plus R2 should limit the base current to 5 mA. MT2 LINE
Thus R2 calculates to
R3

R2 + [(VCC * VBE * VGT)ń5 mA] * 100 W LOAD

+ [(5 * 0.7 * 0.9)ń0.005] 100 W

[ 560 W (specified) – VEE

When the TTL output is low, the lower transistor of the
totem-pole, Q3, is a clamp, through the 560 Ω resistor,
across the 2N4401; and, since the 560 Ω resistor is relatively
low, no leakage-current shunting resistor, R3, is required.
In a similar manner, if the TTL output must remain at
“logic 1” level, the resistor R1 can be calculated as
described earlier (R3 may or may not be required).
For low-logic activation (logic “0”), the circuit of
Figure 6.54 can be used. In this example, the PNP-interface
transistor 2N4403, when turned on, will supply positive-
gate current to the thyristor. To ensure that the high logic
level will keep the thyristor off, the logic gate and the
transistor emitter must be supplied with the same power
supply. The base resistors, as in the previous example, are
dictated by the output characteristics of the logic family
used. Thus if a TTL gate circuit is used, it must be able to
sink the base current of the PNP transistor (IOL(MAX) =
16 mA).
Figure 6.55. High-Logic Output Activation
Figure 6.55 sinks current from the thyristor gate
through a switched NPN transistor whose emitter is
referenced to a negative supply. The logic circuit must also
be referenced to this negative supply to ensure that
transistor Q1 is turned off when required; thus, for TTL
gates, VEE would be –5 V.
In Figure 6.56, the logic-high bus, which is now ground, is
the common ground for both the logic, and the thyristor and
the load. As in the first example (Figure 6.53), the negative
supply for the logic circuit (–VEE) and the collector supply
for the PNP transistor need not be the same supply. If, for
power-supply current limitations, the collector supply is
chosen to be another supply (–VCC), it must be within the
VCEO ratings of the PNP transistor. Also, the power
dissipation of collector resistor, R3, is a function of –VCC —
the lower –VCC, the lower the power rating.

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 The four examples shown use gate-series switching to
R2 R4 activate the thyristor and load (when the interface transistor
MT1 is off, the load is off). Shunt-switching can also be used if
G
R1 the converse is required, as shown in Figures 6.57 and 6.58.
In Figure 6.57, when the logic output is high, NPN
LOGIC GATE 60 Hz transistor, Q1, is turned on, thus clamping the gate of the
MT2 LINE thyristor off. To activate the load, the logic output goes low,
R3
turning off Q1 and allowing positive gate current, as set by
LOAD resistor R3, to turn on the thyristor.
In a similar manner, quadrant’s II and III operation is
derived from the shunt interface circuit of Figure 6.58.

– VEE OPTICAL ISOLATORS/COUPLERS

An Optoelectronic isolator combines a light-emitting
Figure 6.56. Low-Logic Output Activation
device and a photo detector in the same opaque package
that provides ambient light protection. Since there is no
electrical connection between input and output, and the
+5V
emitter and detector cannot reverse their roles, a signal can
pass through the coupler in one direction only.
Since the opto-coupler provides input circuitry protec-
R3 LOAD tion and isolation from output-circuit conditions, ground-
loop prevention, dc level shifting, and logic control of high
voltage power circuitry are typical areas where opto-
R1 MT2 60 Hz
Q1
couplers are useful.
LINE
Figure 6.59 shows a photo-TRIAC used as a driver for a
LOGIC GATE G higher-power TRIAC. The photo-TRIAC is light sensitive
R2 and is turned on by a certain specified light density (H),
MT1
which is a function of the LED current. With dark
conditions (LED current = 0) the photo-TRIAC is not
turned on, so that the only output current from the coupler
Figure 6.57. Shunt-Interface Circuit (High-Logic Output is leakage current, called peak-blocking current (IDRM).
The coupler is bilateral and designed to switch ac signals.
The photo-TRIAC output current capability is, typically,
100 mA, continuous, or 1 A peak.

MT1 R
R2 G I
H MT2
R1
LED
60 Hz PHOTO
MT2 LINE
LOGIC GATE TRIAC 60 Hz
G
MT1 LINE
OPTO COUPLER
R3 LOAD
LOAD

– VEE

Figure 6.58. Shunt-Interface Circuit Figure 6.59. Optically-Coupled TRIAC Driver is Used
(Quadrants I and III Operation) to Drive a Higher-Power TRIAC

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 Any Opto TRIAC can be used in the circuit of I OH+ 300 mA (VOH + 2.4 V)
Figure 6.59 by using Table 6.8. The value of R is based on I OL+ 1.8 mA (VOL + 0.4 V)
V CC + 5 V
the photo-TRIAC’s current-handling capability. For
example, when the MOC3011 operates with a 120 V line
voltage (approximately 175 V peak), a peak IGT current of Since this is not adequate for driving the optocoupler
175 V/180 ohm (approximately 1 A) flows when the line directly (10 mA for the MOC3011), an interface transistor
voltage is at its maximum. If less than 1 A of IGT is needed, is necessary.
R can be increased. Circuit operation is as follows: The circuit of Figure 6.60 may be used for thyristor
triggering from the 3870 logical “1.”

+5V
Table 6.8. Specifications for Typical Optically
Coupled TRIAC Drivers
R3
Maximum Required Peak
Device
LED Trigger Blocking R(Ohms) R
Type
Current (mA) Voltage
MOC3011 15 250 180 MT2
R1
MOC3011 10 250 180
MOC3021 15 400 360 60 Hz
MOC3031 15 250 51 LINE
G MT1
R2
When an op-amp, logic gate, transistor or any other Q1
LOAD
appropriate device turns on the LED, the emitted light MC3870
triggers the photo-TRIAC. Since, at this time, the main
TRIAC is not on, MT2-to-gate is an open circuit. The
60 Hz line can now cause a current flow via R, the Figure 6.60. Logical “1” Activation from MC3870P
photo-TRIAC, Gate-MT1 junction and load. This Microcomputer
Gate-MT1 current triggers the main TRIAC, which then
shorts and turns off the photo-TRIAC. The process repeats The interface transistor, again, can be the 2N4401. With
itself every half cycle until the LED is turned off. 10 mA of collector current (for the MOC3011) and a base
Triggering the main TRIAC is thus accomplished by current of 0.75 mA, the VCE(sat) will be approximately
turning on the LED with the required LED-trigger current 0.1 V.
indicated in Table 6.7. R1 can be calculated as in a previous example.
Specifically:
MICROPROCESSORS 1.8 mA (maximum I OL for the 3870)

Microprocessor systems are also capable of controlling ac u ń

5 V R 1; R 1 u2.77 k
power loads when interfaced with thyristors. Commonly, the R 1 can be 3 k, 1ń4 W
output of the MPU drives a PIA (peripheral interface With a base current of 0.75 mA, R1 will drop (0.75 mA)
adaptor) which then drives the next stage. The PIA Output (3 k) or 2.25 V. This causes a VOH of 2.75 V, which is
Port generally has a TTL compatible output with significant- within the logical “1” range.
ly less current source and sink capability than standard TTL.
(MPUs and PIAs are sometimes constructed together on the R2 + [2.75 V–VBE(on)]ńIB + (2.75–0.75)ń0.75 + 2.66
R 2 can be a 2.7 k, 1ń4 W resistor.
same chip and called microcontrollers.)
.
When switching ac loads from microcomputers, it is
good practice to optically isolate them from unexpected R 3 must limit I C to 10 mA :
load or ac line phenomena to protect the computer R3 + [5 V–VCE(sat) – VF(diode)ń10 mA]
+ (5–0.1–1.2)ń10 mA + 370 W
system from possible damage. In addition, optical
isolation will make UL recognition possible.
A typical TTL-compatible microcontroller, such as the Since R3 is relatively small, no base-emitter leakage
MC3870P offers the following specifications: resistor is required.

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 Figure 6.61 shows logical “0” activation. Resistor values As shown in Figure 6.62(a), the output stage of a typical
are calculated in a similar way. CMOS Gate consists of a P-channel MOS device con-
nected in series with an N-channel device (drain-to-drain),
+5V with the gates tied together and driven from a common
input signal. When the input signal goes high, logical 1, the
P-channel device is essentially off and conducts only
R1
R2 leakage current (IDSS), on the order of pico-amps. The
Q1 N-channel unit is forward-biased and, although it has a
MC3870P relatively high on resistance (rDS(on)), the drain-to-source
R3 voltage of the N-channel device (VDS) is very low
(essentially zero) because of the very low drain current
R
(VDSS) flowing through the device. Conversely, when the
MT2 input goes low (zero), the P-channel device is turned fully
on, the N-channel device is off and the output voltage will
60 Hz be very near VDD.
LINE When interfacing with transistors or thyristors, the
G CMOS Gate is current-limited mainly by its relatively high
MT1
on resistance, the dc resistance between drain and source,
LOAD
when the device is turned on.
The equivalent circuits for sourcing and sinking current
into an external load is shown in Figures 6.62(b) and
6.62(c). Normally, when interfacing CMOS to CMOS, the
Figure 6.61. Logical “0” Activation logic outputs will be very near their absolute maximum
states (VDD or 0 V) because of the extremely small load
currents. With other types of loads (e.g. TRIACs), the
VDD VDD VDD current, and the resulting output voltage, is dictated by the
simple voltage divider of rDS(on) and the load resistor RL,
S where rDS(on) is the total series and/or parallel resistance of
P-CHANNEL
RL
the devices comprising the NOR and NAND function.
P-CHANNEL rDS(on) Interfacing CMOS gates with thyristors requires a
D Vout Vout knowledge of the on resistance of the gate in the source and
Vin Vout sink conditions. The on-resistance of CMOS devices is not
D
N-CHANNEL normally specified on data sheets.
N-CHANNEL It can easily be calculated, however, from the output
RL
rDS(on) drive currents, which are specified. The drive (source/sink)
S currents of typical CMOS gates at various supply voltages
(a) (b) (c) are shown in Table 6.9. From this information, the on
resistance for worst case design is calculated as follows:
For the source condition
Figure 6.62. Output Section of a Typical CMOS Gate,
(b) Equivalent Current-Sourcing Circuit is Activated
r DS(on)(MAX) + (VDD * VOH)ńIOH(MIN)
when Vin goes Low, Turning the P-Channel Device Similarly, for the sink current condition
Fully On, (c) Equivalent Current Sinking Circuit is
Activated when the Input Goes High and Turns the r DS(on)(MAX) + VOLńIOL(MIN)
N-Channel Device On
Values of rDS(on) for the various condition shown in
Table 6.9 are tabulated in Table 6.10.
Specified source/sink currents to maintain logical “1”
THE CMOS INTERFACE and logical “0” levels for various power-supply (VDD)
Another popular logic family, CMOS, can also be used to voltages. The IOH and IOL values are used to calculate the
drive thyristors. “on” resistance of the CMOS output.

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 Table 6.9. CMOS Characteristics DC MOTOR CONTROL WITH THYRISTORS
In order to control the speed of a dc series field motor at
CMOS AL CMOSCL/CP
Series Series different required torque levels, it is necessary to adjust the
Output Drive Current mA, dc mA, dc voltage applied to the motor. For any particular applied
voltage the motor speed is determined solely by the torque
Min Typ Min Typ
requirements and top speed is reached under minimum
I(source) – IOH torque conditions. When a series motor is used as a traction
VDD = 5 V; VOH = 2.5 V – 0.5 – 1.7 – 0.2 – 1.7
drive for vehicles, it is desirable to control the voltage to
VDD = 10 V; VOH = 9.5 V – 0.5 – 0.9 – 0.2 – 0.9
VDD = 15 V; VOH = 13.5 V – 3.5 – 3.5 the motor to fit the various torque requirements of grades,
speed and load. The common method of varying the speed
I(sink) – IOL of the motor is by inserting resistance in series with the
VDD = 5 V; VOL= 0.4 V 0.4 7.8 0.2 7.8
VDD = 10 V; VOL = 0.5 V 0.9 2 0.5 2
motor to reduce the supplied voltage. This type of motor
VDD = 15 V; VOL = 1.5 V 7.8 7.8 speed control is very inefficient due to the I2R loss,
especially under high current and torque conditions.
A much more efficient method of controlling the voltage
applied to the motor is the pulse width modulation method
Table 6.10. Calculated CMOS On Resistance Values shown in Figure 6.63. In this method, a variable width
For Current Sourcing and Sinking pulse of voltage is applied to the motor at the same rate to
at Various VDD Options proportionally vary the average voltage applied to the
motor. A diode is placed in parallel with the inductive
OutputResistance,rDS(on) motor path to provide a circuit for the inductive motor
p g Conditions
Operating Ohms current and prevent abrupt motor current change. Abrupt
Typical Maximum current changes would cause high induced voltage across
Source Condition
the switching device.
VDD = 5V 1.7 k 12.5 k
10 V 500 2.5 k APPLIED
15 V 430 — BATTERY
+ AVERAGE
VM VOLTAGE
Sink Condition –
VDD = 5V 500 2k
10 V 420 1k BATTERY
15 V 190 — LM CURRENT AVERAGE
+

– BATTERY AVERAGE
DIODE
RM CURRENT
It is apparent from this table that the on resistance
decreases with increasing supply voltage. AVERAGE
VM = BACK EMF MOTOR
Although the minimum currents are now shown on the CURRENT
OF MOTOR
data sheet for the 15 V case, the maximum on resistance
LM = MOTOR
can be no greater than the 10 V example and, therefore, can INDUCTANCE
be assumed for worst case approximation to be 1 and RM = MOTOR
2.5 kohms for sink-and-source current cases, respectively. RESISTANCE
The sourcing on resistance is greater than the sinking Figure 6.63. Basic Pulse Width Modulated
case because the difference in carrier mobilities of the two Motor Speed Control
channel types.
Since rDS(on) for both source and sink conditions varies The circulating current through the diode decreases only
with supply voltage (VDD), there are certain drive in response to motor and diode loss. With reference to
limitations. The relative high rDS(on) of the P-channel Figure 6.63, it can be seen that the circulating diode current
transistor could possibly limit the direct thyristor drive causes more average current to flow through the motor than
capability; and, in a like manner, the N-channel r DS(on) is taken from the battery. However, the power taken from
might limit its clamping capability. With a 10 or 15 V the battery is approximately equal to the power delivered to
supply, the device may be capable of supplying more than the motor, indicating that energy is stored in the motor
10 mA, but should be limited to that current, with an inductance at the battery voltage level and is delivered to
external limiting resistor, to avoid exceeding the reliable the motor at the approximate current level when the battery
limits of the unit metalization. is disconnected.

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 To provide smooth and quiet motor operation, the current
variations through the motor should be kept to a minimum
during the switching cycle. There are limitations on the
amount of energy that can be stored in the motor
inductance, which, in turn, limits the power delivered to the
motor during the off time; thus the off time must be short.
To operate the motor at low speeds, the on time must be
approximately 10 percent of the off time and therefore, a
rapid switching rate is required that is generally beyond the
capabilities of mechanical switches. Practical solutions can
be found by the use of semiconductor devices for fast,
reliable and efficient switching operations.
mately 55 µF. In this circuit, SCR3 is gated on at the same
time as SCR1 and allows the resonant charging of Cc
through Lc to twice the supply voltage. SCR3 is then turned
off by the reversal of voltage in the resonant circuit before
SCR2 is gated on. It is apparent that there is very little
power loss in the charge circuit depending upon the voltage
drop across SCR3 and the resistance in Lc.
R1

SCR DC MOTOR CONTROL Cc

SCRs offer several advantages over power transistors

as semiconductor switches. They require less driver SCR1 SCR2
TRIGGER
power, are less susceptible to damage by overload CIRCUIT
currents and can handle more voltage and current. Their
disadvantages are that they have a higher power
dissipation due to higher voltage drops and the difficulty Figure 6.64. Speed Control with Resistive Charging
in commutating to the off condition.
The SCR must be turned off by either interrupting the
current through the anode-cathode circuit or by forcing Lc
current through the SCR in the reverse direction so that the
net flow of forward current is below the holding current SCR3
long enough for the SCR to recover blocking ability.
Commutation of the SCR in high current motor control Cc
circuits is generally accomplished by discharging a capaci-
tor through the SCR in the reverse direction. The value of SCR1 SCR2
TRIGGER
this capacitor is determined approximately from the CIRCUIT
following equation:

Cc + TVq cIA Figure 6.65. Speed Control with Inductive Charging

Where:
Cc = value of necessary commutating capacitance
Tq = turn-off time of the SCR
D2
IA = value of anode current before commutation
Vc = voltage of Cc before commutation
D1
This relationship shows that to reduce the size of Cc, the
capacitor should be charged to as high a voltage as possible
and the SCR should be selected with as low a turn-off time
as possible.
If a 20 microsecond turn-off time SCR is commutated by
a capacitor charged to 36 volts, it would take over 110 µF to
turn off 200 amperes in the RC commutating circuit of
Figure 6.64. If a 50 cycle switching frequency is desired, the TRIGGER
value of R1 would be approximately 5 ohms to allow SCR1 SCR2
CIRCUIT
charging time with an on duty cycle of 10 percent. The value
of this resistor would give approximately 260 watts dissipa-
tion in the charging circuit with 90 percent off duty cycle.
If the resonant charging commutating circuitry of Figure 6.66. SCR Motor Control with Transformer
Figure 6.65 is used, the capacitor is reduced to approxi- Charging

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 If the commutating capacitor is to be reduced further, it is
necessary to use a transformer to charge the capacitor to
more than twice the supply voltage. This type of circuit is
illustrated by the transformer charge circuit shown in
Figure 6.66. In this circuit the capacitor can be charged to
several times the supply voltage by transformer action
through diode D1 before commutating SCR1. The disad-
vantage of this circuit is in the high motor current that
flows through the transformer primary winding.
HEAVY DUTY MOTOR CONTROL WITH SCRs
Another advantage of SCRs is their high surge current
capabilities, demonstrated in the motor drive portion of the
golf cart controller shown in Figure 6.67. Germanium
power transistors were used because of the low saturation
voltages and resulting low static power loss. However,
since switching speeds are slow and leakage currents are
high, additional circuit techniques are required to ensure
reliable operation:
1. The faster turn-on time of the SCR (Q9) over that
of the germanium transistors shapes the turn-on load
line.
2. The parallelled output transistors (Q3-Q8) require a
6 V reverse bias.
3. The driver transistor Q2 obtains reverse bias by
means of diode D4.
To obtain the 6 V bias, the 36 V string of 6 V batteries are
tapped, as shown in the schematic. Thus, the motor is
powered from 30 V and the collector supply for Q2 is 24 V,
minimizing the dissipation in colllector load resistor R1.
Total switching loss in switchmode applications is the
result of the static (on-state) loss, dynamic (switching) loss
and leakage current (off-state) loss. The low saturation
voltage of germanium transistors produces low static loss.
However, switching speeds of the germanium transistors
are low and leakage currents are high. Loss due to leakage
current can be reduced with off bias, and load line shaping
can minimize switching loss. The turn-off switching loss
was reduced with a standard snubber network (D5, C1, R2)
see Figure 6.67.
Turn-on loss was uniquely and substantially reduced by
using a parallel connected SCR (across the germanium
transistors) the MCR265-4 (55 A rms, 550 A surge). This
faster switching device diverts the initial turn-on motor load
current from the germanium output transistors, reducing
both system turn-on loss and transistor SOA stress.
The main point of interest is the power switching portion of
the PWM motor controller. Most of the readily available
PWM ICs can be used (MC3420, MC34060, TL494,
SG1525A, UA78S40, etc.), as they can source at least a
10 mA, +15 V pulse for driving the following power
MOSFET.

+ 36 V
OFF BIAS
6
25 W 700 µF
Q3 C1 + 30 V
Q8 Q9
MCR 1
1N1183 (6) MATCHED 265-4 R2
27 D4 D5
+ 24 V
+ 15 V Q2 1N914 1N1183
20 1 µF D2
D1
+ 10 µF 50 W 330 470 + 15 V
R1 + 18 V
25 V 0.6 (2)
200 W
0.01 µF D3
1N4744
1N914
FORWARD REVERSE
PWM
1k UTC
10 k H51 dc
MOTOR
Q1 2 HP

MTP12N10E
SENSE 0.001
CURRENT
TO PWM

Figure 6.67. PWM DC Motor Controller Using SCR Turn-On Feature

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 Due to the extremely high input impedance of the
power MOSFET, the PWM output can be directly
connected to the FET gate, requiring no active interface
circuitry. The positive going output of the PWM is power
gained and inverted by the TMOS FET Q1 to supply the
negative going base drive to PNP transistor Q2. Diode D1
provides off-bias to this paraphase amplifier, the negative
going pulse from the emitter furnishing base drive to the
six parallel connected output transistors and the positive
going collector output pulse supplying the SCR gate trigger
coupled through transformer T1.
Since the faster turn-on SCR is triggered on first, it will
carry the high, initial turn-on motor current. Then the
slower turn-on germanium transistors will conduct clamp-
ing off the SCR, and carry the full motor current. For the
illustrated 2HP motor and semiconductors, a peak expo-
nentially rising and falling SCR current pulse of 120 A
lasting for about 60 µs was measured. This current is well
within the rating of the SCR. Thus, the high turn-on
stresses are removed from the transistors providing a much
more reliable and efficient motor controller while using
only a few additional components.
DIRECTION AND SPEED CONTROL
FOR MOTORS
For a shunt motor, a constant voltage should be applied
to the shunt field to maintain constant field flux so that
the armature reaction has negligible effect. When constant
voltage is applied to the shunt field, the speed is a direct
function of the armature voltage and the armature current.
If the field is weak, then the armature reaction may
counterbalance the voltage drop due to the brushes,
windings and armature resistances, with the net result of a
rising speed-load characteristic.
The speed of a shunt-wound motor can be controlled
with a variable resistance in series with the field or the
armature. Varying the field current for small motor
provides a wide range of speeds with good speed regula-
tion. However, if the field becomes extremely weak, a
rising speed-load characteristic results. This method cannot
provide control below the design motor speed. Varying the
resistance in series with the armature results in speeds less
than the designed motor speed; however, this method
yields poor speed regulation, especially at low speed
settings. This method of control also increases power
dissipation and reduces efficiency and the torque since the
maximum armature current is reduced. Neither type of
resistive speed control is very satisfactory. Thyristor drive
controls, on the other hand, provide continuous control
through the range of speed desired, do not have the power
losses inherent in resistive circuits, and do not compromise
the torque characteristics of motors.
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Although a series-wound motor can be used with either
dc or ac excitation, dc operation provides superior perfor-
mance. A universal motor is a small series-wound motor
designed to operate from either a dc or an ac supply of the
same voltage. In the small motors used as universal motors,
the winding inductance is not large enough to produce
sufficient current through transformer action to create
excessive commutation problems. Also, high-resistance
brushes are used to aid commutation. The characteristics of
a universal motor operated from alternating current closely
approximate those obtained for a dc power source up to full
load; however, above full load the ac and dc characteristics
differ. For a series motor that was not designed as a
universal motor, the speed-torque characteristic with ac
rather than dc is not as good as that for the universal motor.
At eight loads, the speed for ac operation may be greater
than for dc since the effective ac field strength is smaller
than that obtained on direct current. At any rate, a series
motor should not be operated in a no-load condition unless
precaution is are taken to limit the maximum speed.
SERIES-WOUND MOTORS
The circuit shown in Figure 6.68 can be used to control
the speed and direction of rotation of a series-wound dc
motor. Silicon controlled rectifiers Q1- Q4, which are
connected in a bridge arrangement, are triggered in
diagonal pairs. Which pair is turned on is controlled by
switch S1 since it connects either coupling transformer T1
or coupling transformer T2 to a pulsing circuit. The current
in the field can be reversed by selecting either SCRs Q2
and Q3 for conduction, or SCRs Q1 and Q4 for conduction.
Since the armature current is always in the same direction,
the field current reverses in relation to the armature current,
thus reversing the direction of rotation of the motor.
A pulse circuit is used to drive the SCRs through either
transformer T1 or T2. The pulse required to fire the SCR is
obtained from the energy stored in capacitor C1. This
capacitor charges to the breakdown voltage of zener diode
D5 through potentiometer R1 and resistor R2. As the
capacitor voltage exceeds the zener voltage, the zener
conducts, delivering current to the gate of SCR Q5. This
turns Q5 on, which discharges C1 through either T1 or T2
depending on the position of S1. This creates the desired
triggering pulse. Once Q5 is on, it remains on for the
duration of the half cycle. This clamps the voltage across
C1 to the forward voltage drop of Q5. When the supply
voltage drops to zero, Q5 turns off, permitting C1 to begin
charging when the supply voltage begins to increase.
 MCR12D MCR12D
T1 T2
Q1 Q2
(4) 1N4722
D2 OR
D1
AC MDA2503
MCR12D FIELD MCR12D
LINE
D3 D4 Q3 Q4
R1
20 k
5W
T2 T1
R2, 4.7 k
5W 5 µF
75 V
+ ARMATURE

Q5 D5 C1
2N5062 1N5262 S1
T1 (2) T2
R3
1k SPRAGUE
11Z13

Figure 6.68. Direction and Speed Control for Series-Wound or Universal Motor

D1 D2
ac (4) 1N4722
LINE
D3 D4 Q3 Q1
R1
20 k
5W
FIELD T2 T1
R2, 4.7 k 5 µF ARMATURE
5W 75 V
+

Q5 D5 C1 Q4 Q2

2N5062 1N5262

R3 T1 T2 T1 T2
1k

T1 AND T2 ARE SPRAGUE 11Z13

Q1 THRU Q4 — MCR12D
Figure 6.69. Direction and Speed Control for Shunt-Wound Motor

The speed of the motor can be controlled by potentiome-
ter R1. The larger the resistance in the circuit, the longer
required to charge C1 to the breakdown voltage of zener
D5. This determines the conduction angle of either Q1 and
Q4, or Q2 and Q3, thus setting the average motor voltage
and thereby the speed.
SHUNT-WOUND MOTORS
If a shunt-wound motor is to be used, then the circuit in
Figure 6.69 is required. This circuit operates like the one
shown in Figure 6.68. The only differences are that the
field is placed across the rectified supply and the armature
is placed in the SCR bridge. Thus the field current is
unidirectional but armature current is reversible; conse-
quently the motor’s direction of rotation is reversible.
Potentiometer R1 controls the speed as explained
previously.

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RESULTS With the supply voltage applied to the circuit, the timing
Excellent results were obtained when these circuits were capacitor C1 charges to the firing point of the PUT, 2 volts
used to control 1/15 hp, 115 V, 5,000 r/min motors. This plus a diode drop. The output of the PUT is coupled
circuit will control larger, fractional-horsepower motors through two 0.01 µF capacitors to the gate of Q2 and Q3.
provided the motor current requirements are within the To clarify operation, assume that Q3 is on and capacitor C4
semiconductor ratings. Higher current devices will permit is charged plus to minus as shown in the figure. The next
control of even larger motors, but the operation of the pulse from the PUT oscillator turns Q2 on. This places the
motor under worst case must not cause anode currents to voltage on C4 across Q3 which momentarily reverse biases
exceed the ratings of the semiconductor. Q3. This reverse voltage turns Q3 off. After discharging,
C4 then charges with its polarity reversed to that shown.
The next pulse from Q1 turns Q3 on and Q2 off. Note that
PUT APPLICATIONS C4 is a non-polarized capacitor.
PUTs are negative resistance devices and are often used For the component values shown, the lamp is on for
in relaxation oscillator applications and as triggers for about 1/2 second and off the same amount of time.
controlling thyristors. Due to their low leakage current,
they are useful for high-impedance circuits such as R1 R3
long-duration timers and comparators. 10 k 510 k
Q1
TYPICAL CIRCUITS
+ MPS6516
The following circuits show a few of the many ways in
which the PUT can be used. The circuits are not optimized –
RAMP OUT
40 V
even though performance data is shown.
In several of the circuit examples, the versatility of the R2 R5
2N6027 100 k
PUT has been hidden in the design. By this it is meant that 20 k +
C1
in designing the circuit, the circuit designer was able to R4 5 to 20 V
select a particular intrinsic standoff ratio or he could select 100
a particular RG (gate resistance) that would provide a
maximum or minimum valley and peak current. This
Figure 6.71. (a). Voltage Controlled Ramp Generator
makes the PUT very versatile and very easy to design with. (VCRG)

LOW VOLTAGE LAMP FLASHER 20

The PUT operates very well at low supply voltages 19
because of its low on-state voltage drop. 18
A circuit using the PUT in a low voltage application is 17
shown in Figure 6.70 where a supply voltage of 3 volts is C = 0.0047 µF
16
used. The circuit is a low voltage lamp flasher composed of C = 0.01 µF
a relaxation oscillator formed by Q1 and an SCR flip flop 15
formed by Q2 and Q3. 14
Vin (VOLTS)

13

+3V 12
R1 R3 R6
100 k 1k 51 k 11
C4
Q1 4 µF GE NO. 10
2N6027 + – 14
9
R4 Q2 (SEE TEXT)
2N5060 8
2k C2
C1 7
0.01 µF Q3
10 µF 0.01 µF 6
2N5060
R2 R5 5
C3 R7
910 1k 1 2 3 4 5 6 7 8
1k
DURATION TIME (ms)

Figure 6.70. Low Voltage Lamp Flasher (b). Voltage versus Ramp Duration Time of VCRG

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VOLTAGE CONTROLLED RAMP GENERATOR
The PUT provides a simple approach to a voltage
controlled ramp generator, VCRG, as shown in
Figure 6.71(a). The current source formed by Q1 in
conjuction with capacitor C1 set the duration time of the
ramp. As the positive dc voltage at the gate is changed, the
peak point firing voltage of the PUT is changed which
changes the duration time, i.e., increasing the supply
voltage increases the peak point firing voltage causing the
duration time to increase.
Figure 6.71(b) shows a plot of voltage-versus-ramp
duration time for a 0.0047 µF and a 0.01 µF timing
capacitor. The figure indicates that it is possible to have a
change in frequency of 3 ms and 5.4 ms for the 0.0047 µF
and the 0.01 µF capacitor respectively as the control
voltage is varied from 5 to 20 volts.
LOW FREQUENCY DIVIDER
The circuit shown in Figure 6.72 is a frequency divider
with the ratio of capacitors C1 and C2 determining
division. With a positive pulse applied to the base of Q1,
assume that C1 = C2 and that C1 and C2 are discharged.
When Q1 turns off, both C1 and C2 charge to 10 volts each
through R3. On the next pulse to the base of Q1, C1 is again
discharged but C2 remains charged to 10 volts. As Q1 turns
off this time, C1 and C2 again charge. This time C2 charges
to the peak point firing voltage of the PUT causing it to
fire. This discharges capacitor C2 and allows capacitor
C1 to charge to the line voltage. As soon as C2 discharges
and C1 charges, the PUT turns off. The next cycle begins
with another positive pulse on the base of Q1 which again
discharges C1.
The input and output frequency can be approximated by
the equation
f in
) C2) fout
[ (C1 C1
For a 10 kHz input frequency with an amplitude of 3 volts,
Table 6.11 shows the values for C1 and C2 needed to divide
by 2 to 11.
This division range can be changed by utilizing the
programmable aspect of the PUT and changing the voltage
on the gate by changing the ratio R6/(R6 + R5). Decreasing
the ratio with a given C1 and C2 decreases the division
range and increasing the ratio increases the division range.
The circuit works very well and is fairly insensitive to
the amplitude, pulse width, rise and fall times of the
incoming pulses.

+ 20 Vdc
Table 6.11

R3 R5 8V C1 C2 Division
1k Q2 5.1 k
C1 1N4001 0.01 µF 0.01 µF 2
2N6027
0.01 µF 0.02 µF 3
R1 0.01 µF 0.03 µF 4
3V D2
3.9 k Q1 0.01 µF 0.04 µF 5
MPS6512 D1 0.01 µF 0.05 µF 6
C2 OUT 0.01 µF 0.06 µF 7
1N4001
R2 R4 R6 0.01 µF 0.07 µF 8
2.2 k 100 5.1 k 0.01 µF 0.08 µF 9
0.01 µF 0.09 µF 10
0.01 µF 0.1 µF 11

Figure 6.72. Low Frequency Divider

PUT LONG DURATION TIMER V GS+ VP (1 * ǸIOńIDSS )

A long duration timer circuit that can provide a time
delay of up to 20 minutes is shown in Figure 6.73. The
circuit is a standard relaxation oscillator with a FET current
N R1 + VIGS
O
source in which resistor R1 is used to provide reverse bias
on the gate-to-source of the JFET. This turns the JFET off where IO is the current out of the current source.
and increases the charging time of C1. C1 should be a low VP is the pinch off voltage,
leakage capacitor such as a mylar type. VGS is the voltage gate-to-source and,
The source resistor of the current source can be IDSS is the current, drain-to-source, with the gate
computed using the following equation: shorted to the source.

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 The time needed to charge C1 to the peak point firing For example, the 2N6028 has IP guaranteed to be less than
voltage of Q2 can be approximated by the following 0.15 µA at RG = 1 M Ohm as shown in Figure 6.73.
equation:
+ 20 Vdc

t + CDI V , Q1
2N5457

where t is time in seconds R3

C is capacitance in µF, R1 2M

∆V is the change in voltage across capacitor C1, 22 M

and
I is the constant current used to charge C1. Q2
2N6028
Maximum time delay of the circuit is limited by the
C1
peak point firing current, lP, needed to fire Q2. For
10 µF MYLAR OUTPUT
charging currents below IP, there is not enough current R2 R4
available from the current source to fire Q2, causing the 100 2M
circuit to lock up. Thus PUTs are attractive for long
duration timing circuits because of their low peak point
current. This current becomes very small when RG (the
equivalent parallel resistance of R3 and R4) is made large. Figure 6.73. 20-Minute, Long Duration Timer

PHASE CONTROL 97% of the power available to the load.

Figure 6.74 shows a circuit using a PUT for phase Only one SCR is needed to provide phase control of
control of an SCR. The relaxation oscillator formed by Q2 both the positive and negative portion of the sine wave
provides conduction control of Q1 from 1 to 7.8 millisec- byputting the SCR across the bridge composed of diodes
onds or 21.6° to 168.5°. This constitutes control of over D1 through D4.

R1

D3 15 k
D1 2 WATT R2 R3
250 k 1k
LOAD Q1 D5
100 Ω 2N6402 1N4114
20 V
C1 R4
Q2
D4 1k
115 V rms D2 0.1 µF 2N6027
60 Hz

Figure 6.74. SCR Phase Control

BATTERY CHARGER USING A PUT
A short circuit proof battery charger is shown in
Figure 6.75 which will provide an average charging current
of about 8 amperes to a 12 volt lead acid storage battery.
The charger circuit has an additional advantage in that it
will not function nor will it be damaged by improperly
connecting the battery to the circuit.
With 115 volts at the input, the circuit commences to
function when the battery is properly attached. The battery
provides the current to charge the timing capacitor C1 used
in the PUT relaxation oscillator. When C1 charges to the
peak point voltage of the PUT, the PUT fires turning the
SCR on, which in turn applies charging current to the
battery. As the battery charges, the battery voltage
increases slightly which increases the peak point voltage of
the PUT. This means that C1 has to charge to a slightly
higher voltage to fire the PUT. The voltage on C1 increases
until the zener voltage of D1 is reached which clamps the
voltage on C1 and thus prevents the PUT oscillator from
oscillating and charging ceases. The maximum battery
voltage is set by potentiometer R2 which sets the peak
point firing voltage of the PUT.

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 In the circuit shown, the charging voltage can be set from series with the SCR).
10 V to 14 V, the lower limit being set by D1 and the upper Resistor R4 is used to prevent the PUT from being
limit by T1. Lower charging voltages can be obtained by destroyed if R2 were turned all the way up.
reducing the reference voltage (reducing the value of zener Figure 6.75(b) shows a plot of the charging characteris-
diode D1) and limiting the charging current (using either a tics of the battery charger.
lower voltage transformer, T1, or adding resistance in

T1

115 V 14 V
rms rms
SCR
A

R1 R4
10 k 1k
2N6027 R2
+
50 k
12 V
PUT
–
C1
D1
0.1 µF T2 R3
1N5240
10 V 11Z12 47 k
1:1 B

DALE PT50

Figure 6.75. (a). 12-Volt Battery Charger

8 increases which increases the firing point of Q3. This

SPECIFIC GRAVITY OF ELECTROLYTE versus TIME delays the firing of Q3 because C1 now has to charge to a
1250 7
higher voltage before the peak-point voltage is reached.
CURRENT (AMPS)
SPECIFIC GRAVITY

6 Thus the output voltage is held fairly constant by delaying

the firing of Q5 as the input voltage increases. For a
1200 5 decrease in the input voltage, the reverse occurs.
Another means of providing compensation for increased
4 input voltage is achieved by Q2 and the resistive divider
1150 CHARGING CURRENT versus TIME 3
formed by R6 and R7. As input voltage increases, the
voltage at the base of Q2 increases causing Q2 to turn on
2 harder which decreases the charging rate of C1 and further
0 1 2 3 4 5 6 7 8 9 delays the firing of Q5.
TIME (HR) To prevent the circuit from latching up at the beginning
Figure 6.75 (b) Charging Characteristics of each charging cycle, a delay network consisting of Q1
of Battery Charger and its associated circuitry is used to prevent the current
source from turning on until the trigger voltage has reached
a sufficiently high level. This is achieved in the following
way: Prior to the conduction of D2, the voltage on the base
90 V rms VOLTAGE REGULATOR USING A PUT of Q1 is set by the voltage divider (R4 + R5)/(R1 + R3 + R4
The circuit of Figure 6.76 is an open loop rms voltage + R5). This causes the base of Q1 to be more positive than
regulator that will provide 500 watts of power at 90 V the emitter and thus prevents Q1 from conducting until the
rms with good regulation for an input voltage range of voltage across R3 is sufficient to forward bias the
110 – 130 V rms. base-emitter junction of Q1. This occurs when the line
With the input voltage applied, capacitor C1 charges voltage has increased to about 15 volts.
until the firing point of Q3 is reached causing it to fire. This The circuit can be operated over a different voltage range
turns Q5 on which allows current to flow through the load. by changing resistors R6 and/or R4 which change the
As the input voltage increases, the voltage across R10 charging rate of C1.

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 Figure 6.76(b) provides a plot of output voltage and the figure indicates, good regulation can be obtained
conduction angle versus input voltage for the regulator. As between the input voltage range of 110 to 130 volts.

LOAD R1 R6 R9
500 W 10 k 300 k 100 k
90 V ± 2 R2

1k
R3 Q1 Q3
110-130 V D1 2N3906 2N6027
rms 1k
R4 Q5
10 k Q2 MCR16M
2N3903
C1
0.1 µF
D2 100 V
R5
1N4747
6.8 k R7 R8 R10
20 V
4.7 k 10 k 6.8 k

Figure 6.76. (a). rms Voltage Regulator

100 7 this time the voltage on C3 lags the line voltage. When the
CONDUCTION ANGLE (ms)

line voltage goes through zero there is still some charge on

OUTPUT VOLTAGE (V rms)

90
80
70
CONDUCTION TIME
60
OUTPUT VOLTAGE
50
80 90 100 110 120 130 140 150
INPUT VOLTAGE (V rms)
(b). Output Voltage and Conduction Angle
versus Input Voltage
TRIAC ZERO-POINT SWITCH APPLICATIONS
BASIC TRIAC ZERO-POINT SWITCH
Figure 6.77 shows a manually controlled zero-point
switch useful in power control for resistive loads. Opera-
tion of the circuit is as follows. On the initial part of the
positive half cycle, the voltage is changing rapidly from
zero causing a large current flow into capacitor C2. The
current through C2 flows through R4, D3, and D4 into the
gate of the TRIAC Q2 causing it to turn on very close to
zero voltage. Once Q2 turns on, capacitor C3 charges to the
peak of the line voltage through D5. When the line voltage
passes through the peak, D5 becomes reverse-biased and
C3 begins to discharge through D4 and the gate of Q2. At
6
C3 so that when the line voltage starts negative C3 is still
5 discharging into the gate of Q2. Thus Q2 is also turned on
near zero on the negative half cycle. This operation
4 continues for each cycle until switch S1 is closed, at which
time SCR Q1 is turned on. Q1 shunts the gate current away
3
from Q2 during each positive half cycle keeping Q2 from
2 turning on. Q2 cannot turn on during the negative cycle
160 170 because C3 cannot charge unless Q2 is on during the
positive half cycle.
If S1 is initially closed during a positive half cycle, SCR
Q1 turns on but circuit operation continues for the rest of
the complete cycle and then turns off. If S1 is closed during
a negative half cycle, Q1 does not turn on because it is
reverse biased. Q1 then turns on at the beginning of the
positive half cycle and Q2 turns off.
Zero-point switching when S1 is opened is ensured by
the characteristic of SCR Q1. If S1 is opened during the
positive half cycle, Q1 continues to conduct for the entire
half cycle and TRIAC Q2 cannot turn on in the middle of
the positive half cycle. Q2 does not turn on during the
negative half cycle because C3 was unable to charge
during the positive half cycle. Q2 starts to conduct at the
first complete positive half cycle. If S1 is opened during
the negative half cycle, Q2 again cannot turn on until the
beginning of the positive half cycle because C3 is
uncharged.
A 3-volt gate signal for SCR Q1 is obtained from D1,
R1, C1, and D6.

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 R3
C2 +
1.2 k
2 µF
7W
200 V
D1 Q2
1N4003 2N6346
R4
150 Ω
D3 D4
1W
1N4003 1N4001
R1
115 VAC 12 k
60 Hz D5
2W D2 1N4003
1N4003
+
R2 Q1 C3
10 k MCR1906-4 1 µF
R5
C1 200 V
+ S1 1k LOAD
10 µF D6 2W
5V 1N4372

Figure 6.77. Zero-Point Switch

AN INTEGRATED CIRCUIT ZERO VOLTAGE SWITCH

A single CA3059/79 integrated circuit operating directly
off the ac line provides the same function as the discrete
circuit shown in Figure 6.77. Figure 6.78 shows its block
diagram. The circuit operates a power triac in quadrants
one and four, providing gate pulses synchronized to the
zero voltage point of the ac cycle. This eliminates the RFI
resulting from the control of resistive loads like heaters and
flashing lamps. Table 6.12 specifies the value of the input
series resistor for the operating line voltage. Figure 6.79
shows the pin connection for a typical application.

2
VCC

RS 5
POWER
LIMITER VCC
AC SUPPLY
RL
INPUT CURRENT
ZERO 3
BOOST
CROSSING
12 DETECTOR
MT2
DC MODE or
400 Hz INPUT
14 TRIAC 4 MT1
100 RP PROTECTION
CIRCUIT DRIVE
µF + GATE
AC
INPUT 15 V –
VOLT- +
AGE 13 ON/OFF
SENSING
9 AMP
–

* VCC
RX 10
11

8 1 6
GND 7 INHIBIT EXTERNAL TRIGGER
*NTC SENSOR

Figure 6.78. Functional Block Diagram

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 Table 6.12.
AC Input Voltage Input Series Dissipation
RL (50/60 Hz) Resistor (RS) Rating for RS
9 10 11 3
vac kΩ W
RS 24 20
2.0 05
0.5
10 k 120 10 20
2.0
5 T2800D 208/230 20 40
4.0
120 Vrms CA3059 277 25 5.0
4
60 Hz
7

TEMPERATURE CONTROL WITH ZERO-POINT

8 13 14 2 SWITCHING
R2 ZERO VOLTAGE SWITCH PROPORTIONAL BAND
5k
TEMPERATURE CONTROLLER
Figure 6.80 shows the block diagram for the UAA1016B
R1
ON integrated circuit temperature controller. Figure 6.81 shows
5k
OFF a typical application circuit. This device drives triacs with a
+ zero voltage full wave technique allowing RFI free power
100 µf
15 V
regulation of resistive loads and adjustable burst frequency
to comply with standards. It operates directly off the ac line
triggers the triac in Q2 and Q3, is sensor fail-safe, and
provides proportional temperature control over an adjust-
Figure 6.79. Zero Voltage Switch Using CA3059 able band. Consult the device data sheet (DS9641) for
Integrated Circuit detailed information.

220 VAC

TEMP. FAIL-SAFE
SET R1 R2 PULSE
AMPLIFIER
3
+ SAMPLING
6
FULL WAVE
VREF 4 LOGIC MAC224-8
–
COMPARATOR
R4 SAWTOOTH 7
1.0 GENERATOR
UAA1016B
M 1
SYNCHRO- POWER
NIZATION SUPPLY

(NTC)
TEMP. LOAD
SENSOR

2 8 5 +
– VCC
RL CPin 2
R3 RSYNC
180 k

Design Notes:

1. Let R4 q 5RL 220 VAC

2. Select R2 Ratio for a symmetrical reference deviation centered about Pin 1 output swing, R2 will be slightly greater than R3.
R3 DVPin 1
3. Select R2 and R3 values for the desired reference deviation where DV REF +
R4
R2 | | R3
1 )
Figure 6.80. UA1016B Block Diagram and Pin Assignment

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 50 k
6.8 k

22 k
3 6 0.1
µF
4
UAA1016B 100
MAC224-8

MOV
R4 Ω
220 VAC
1 7

6.8
RT k RL
2 8 5
+ + HEATER
47 µF 100 k 100 µF
8.0 V 2.0 kW

RT : NTC R @ 25°C = 22 k  10% 18 k

B = 3700 2.0 W 1N4005
MOV: 250 VAC VARISTOR

Figure 6.81. Application Circuit — Electric Radiator with Proportional Band

Thermostat, Proportional Band 1°C at 25°C

TRIAC RELAY-CONTACT PROTECTION
A common problem in contact switching high current
is arcing which causes erosion of the contacts. A
solution to this problem is illustrated in Figure 6.82.
This circuit can be used to prevent relay contact arcing
for loads up to 50 amperes.
There is some delay between the time a relay coil is
energized and the time the contacts close. There is also a
delay between the time the coil is de-energized and the time
the contacts open. For the relay used in this circuit both
times are about 15 ms. The TRIAC across the relay
contacts will turn on as soon as sufficient gate current is
present to fire it. This occurs after switch S1 is closed but
before the relay contacts close. When the contacts close,
the load current passes through them, rather than through
the TRIAC, even though the TRIAC is receiving gate
current. If S1 should be closed during the negative half
cycle of the ac line, the TRIAC will not turn on
immediately but will wait until the voltage begins to go
positive, at which time diode D1 conducts providing gate
current through R1. The maximum time that could elapse
before the TRIAC turns on is 8-1/3 ms for the 60 Hz
supply. This is adequate to ensure that the TRIAC will be
on before the relay contact closes. During the positive half
cycle, capacitor C1 is charged through D1 and R2. This
stores energy in the capacitor so that it can be used to keep
the TRIAC on after switch S1 has been opened. The time
constant of R1 plus R2 and C1 is set so that sufficient gate
current is present at the time of relay drop-out after the
opening of S1, to assure that the TRIAC will still be on. For
the relay used, this time is 15 ms. The TRIAC therefore
limits the maximum voltage, across the relay contacts upon
dropout to the TRIAC’s voltage drop of about 1 volt. The
TRIAC will conduct until its gate current falls below the
threshold level, after which it will turn off when the anode
current goes to zero. The TRIAC will conduct for several
cycles after the relay contacts open.
This circuit not only reduces contact bounce and arcing
but also reduces the physical size of the relay. Since the
relay is not required to interrupt the load current, its rating
can be based on two factors: the first is the rms rating of the
current-carrying metal, and the second is the contact area.
This means that many well-designed 5 ampere relays can
be used in a 50 ampere load circuit. Because the size of the
relay has been reduced, so will the noise on closing.
Another advantage of this circuit is that the life of the relay
will be increased since it will not be subjected to contact
burning, welding, etc.
The RC circuit shown across the contact and TRIAC (R3
and C2) is to reduce dv/dt if any other switching element is
used in the line.

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 R3 AN AUTOMATIC AC LINE VOLTAGE SELECTOR
C2 USING THE MC34161 AND A TRIAC
47
50 AMP 0.1 µF Line operated switching regulators run off of 120 or 240
LOAD
MAC210A8
VAC by configuring the main reservoir input capacitor
filter as a full-wave doubler or full-wave bridge. This
S1 integrated circuit provides the control signals and trigger-
ing for a TRIAC to automatically provide this function.
R1 Channel 1 senses the negative half cycles of the AC line
115 V RELAY WITH PICK-
115 VAC 1.5 k voltage. If the line voltage is less than 150 V, the circuit
UP AND DROP-OUT TIMES 10 W
60 Hz OF 10-20 ms will switch from bridge mode to voltage doubling mode
after a preset time delay. The delay is controlled by the
D1 1N4004
R2 100 kΩ resistor and the 10 µF capacitor. If the line voltage
10
10 W
is greater than 150 V, the circuit will immediately return to
C1
+ fullwave bridge mode.
20 µF
250 V

Figure 6.82. TRIAC Prevents Relay Contact Arcing

B+

MAC + 220
75 k
228A6FP 250 V

MR506
T
INPUT +
8 10 k 220
92 TO 276 75 k
250 V
VAC 3.0 A
2.54 V
REFERENCE 1.2 k RTN
1

10 k –
7 +
+
+ 2.8 V 6
2 + –
100 k 1.27 V –
+ +
1.6 M 0.6 V
+ 5
3 –
+
+
10 1.27 V
1N +
4742 47
4
10 k
3W

Figure 6.83. Automatic AC Line Voltage Selector

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AN1045/D

Series Triacs
In AC High Voltage
Switching Circuits

By George Templeton http://onsemi.com

Thyristor Applications Engineer
APPLICATION NOTE

INTRODUCTION

Edited and Updated

This paper describes the series connection of triacs to
create a high voltage switch suitable for operation at volt-
ages up to 2000 Volts. They can replace electromechanical
contactors or extend their current rating and lifetime. Motor
starters and controllers operating at line voltages of 240
Volts or more require high-voltage switches. Transformer
action and resonant snubber charging result in voltages
much greater than the peak of the line. Triacs can be sub-
jected to both commutating and static dV/dt when multiple
switching devices are present in the circuit. Snubber
designs to prevent static dV/dt turn-on result in higher volt-
ages at turn-off. Variable load impedances also raise volt-
age requirements.
The benefits of series operation include: higher blocking
voltage, reduced leakage, better thermal stability, higher
dV/dt capability, reduced snubber costs, possible snubber-
less operation, and greater latitude in snubber design. The
advantages of triacs as replacements for relays include:
winding, and start capacitor voltage. This voltage increases
when triac turn-off occurs at higher rpm.
TRIGGERING
Figure 1 illustrates a series thyristor switching circuit. In
this circuit, the top triac triggers in Quadrant 1 when the
bottom triac triggers in Quadrant 3. When the optocoupler
turns on, gate current flows until the triacs latch. At that
time, the voltage between the gate terminals drops to about
0.6 Volts stopping the gate current. This process repeats
each half cycle. The power rating of the gate resistor can be
small because of the short duration of the gate current.
Optocoupler surge or triac gate ratings determine the mini-
mum resistance value. For example, when the maximum
optocoupler ITSM rating is 1 A:
Rg u+ VpeakńImax (1.0)
+ 750 Vń1 A + 750 Ohm
Rg

• Small size and light weight
• Safety — freedom from arcing and spark initiated
explosions
• Long lifespan — contact bounce and burning eliminated
• Fast operation — turn-on in microseconds and turn-off
The triacs retrigger every half cycle as soon as the line
voltage rises to the value necessary to force the trigger cur-
rent. The instantaneous line voltage V is
V + IGT Rg ) 2 VGT ) 2 VTM (1.1)
where VGT, IGT are data book specifications for the triac and

ƪ ƫ
in milliseconds
• Quiet operation VTM is the on-voltage specification for the optocoupler.
The phase delay angle is
Triacs can be used to replace the centrifugal switch in

+ SIN*1 Ǹ2
capacitor start motors. The blocking voltage required of the
qd V (1.2)
triac can be much greater than the line voltage would sug-
V LINE
gest. It must block the vector sum of the line, auxiliary

 Semiconductor Components Industries, LLC, 1999 148 Publication Order Number:

August, 1999 – Rev. 2 AN1045/D
 AN1045/D
IG IL
G MEAN
MT1
RG
MT2
MT2
MT1
G
Figure 6.1. Series Switch
STATIC VOLTAGE SHARING
Maximum blocking voltage capability results when the
triacs share voltage equally. The blocking voltage can be dc
or ac. A combination of both results when the triac switches
the start winding in capacitor start motors. In the simple
series connection, both triacs operate with an identical leak-
age current which is less than that of either part operated
alone at the same voltage. The voltages across the devices
are the same only when their leakage resistances are identi-
cal. Dividing the voltage by the leakage current gives the
leakage resistance. It can range from 200 kohm to 2000
megohm depending on device characteristics, temperature,
and applied voltage.
Drawing a line corresponding to the measured series
leakage on each device’s characteristic curve locates its
operating point. Figure 3a shows the highest and lowest
leakage units from a sample of 100 units. At room tempera-
ture, a leakage of 350 nA results at 920 Volts. The lowest
leakage unit blocks at the maximum specified value of 600
Volts, while the highest blocks 320 Volts. A 50 percent
boost results.
Figure 3b shows the same two triacs at rated TJmax. The
magnitude of their leakage increased by a factor of about
1000. Matching between the devices improved, allowing
operation to 1100 Volts without exceeding the 600 Volt rat-
ing of either device.
Identical case temperatures are necessary to achieve
good matching. Mounting the devices closely together on a
common heatsink helps.
A stable blocking condition for operation of a single triac
with no other components on the heatsink results when
dI MT
dT J @ @
dT J
dP J
dP J
dI MT
t1 (2.0)
Thermal run-away is a regenerative process which occurs
whenever the loop gain in the thermal feedback circuit
reaches unity. An increase in junction temperature causes
increased leakage current and higher power dissipation.
Higher power causes higher junction temperature which in
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DESIGN
∆I CAPABILITY
6σ 6σ
3σ 3σ
PROCESS WIDTH
Figure 6.2. Designing for Probable Leakage
turn leads to greater leakage. If the rate of heat release at the
junction exceeds the rate of removal as temperature
increases, this process repeats until the leakage current is
sufficient to trigger the thyristor on.
DC blocking simplifies analysis. A design providing
stable dc operation guarantees ac performance. AC opera-
tion allows smaller heatsinks.
The last term in the stability equation is the applied volt-
age when the load resistance is low and the leakage causes
negligible voltage drop across it. The second term is the
thermal resistance from junction to ambient. The first term
describes the behavior of leakage at the operating condi-
tions. For example, if leakage doubles every 10°C, a triac
operating with 2 mA of leakage at 800 Vdc with a 6°C/W
@ @
thermal resistance is stable because
2 mA
10°C
6°C
W
800 V + 0.96
Operating two triacs in series improves thermal stability.
When two devices have matched leakages, each device sees
half the voltage and current or 1/4 of the power in a single
triac. The total leakage dissipation will approach half that
of a single device operated at the same voltage. The addi-
tional voltage margin resulting from the higher total block-
ing voltage reduces the chance that either device will oper-
ate near its breakdown voltage where the leakage current
increases rapidly with small increments in voltage. Higher
voltage devices have lower leakage currents when operated
near breakdown. Consequently, the highest breakover volt-
age unit in the pair will carry the greatest proportion of the
burden. If the leakage current is large enough to cause sig-
nificant changes in junction temperature, (∆TJ = φJC PD),
the effect will tend to balance the voltage division between
the two by lowering the leakage resistance of the hotter
unit. If the leakage mismatch between the two is large,
nearly all the voltage will drop across one device. As a
result there will be little benefit connecting two in series.
Series blocking voltage depends on leakage matching.
Blocking stability depends on predictable changes in leak-
age with temperature. Leakage has three components.
 AN1045/D

HIGH

LOW
∆IL

LOW

HIGH

(a) 100 V/ 100 nA/ 25°C (b) 100 V/ 100 µA/ 125°C

Figure 6.3. Leakage Matching versus Temperature

Surface Leakage from 70 to 150°C. Actual values measured 0.064 at 125°

Passivation technique, junction design, and cleanliness
determine the size of this component. It tends to be small
and not very dependent on temperature.
Diffusion Leakage
Measurements with 1 volt reverse bias show that this
component is less than 10 percent of the total leakage for
allowed junction temperatures. It follows an equation of the
form:
I T e*(qvńkT) (2.1)
and doubles about every 10°C. Its value can be estimated
by extrapolating backward from high temperature data
points.
and 0.057 at 150°.
Deviations from this behavior will result at voltages and
temperatures where leakage magnitude, current gain, and
avalanche multiplication aid unwanted turn-on. Sensitive
gate triacs are not recommended for this reason.
DERATING AND LEAKAGE MATCHING
Operation near breakdown increases leakage mismatch
because of the effects of avalanche multiplication. For
series operation, devices should be operated at least 100
Volts below their rating.
20

Depletion Layer Charge Generation 18

650 V
PERCENT (SAMPLE SIZE = 100)

This component is a result of carriers liberated from 16

within the blocking junction depletion layer. It grows with 550 V
14
the square root of the applied voltage. The slope of the leak- TJ = 25°C
12
age versus applied voltage is the mechanism allowing for
10
series operation with less than perfect leakage matching.
8
Predictable diffusion processes determine this leakage. At
temperatures between 70 and 150°C it is given by: 6

i T e * kTE (2.2)
4
2
where E = 1.1 eV, k = 8.62E – 5 eV/k, T = degrees Kelvin,
0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6
and k = 8.62 x 10 – 5 eV/k.
It is useful to calculate the percentage change in leakage
Figure 6.4. Normalized Leakage (Mean = 1.0)
current with temperature:
A + 1 di
i dT J
+ kTE2 + 0.08 + 8%
°C
Figure 4 shows the leakage histogram for a triac sample
operated at two different voltages. The skewedness in the
The coefficient A was evaluated on 3 different die size high-voltage distribution is a consequence of some of the
triacs by curve fitting to leakage measurements every 10° sample operating near breakdown.

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 AN1045/D
HEATSINK SELECTION
Solving equations (2.0) and (2.3) for the thermal resis-
tance required to prevent runaway gives:
@@
θ JA t A 1V i (3.0)
where θJA is thermal resistance, junction to ambient, in
°C/W, A = 0.08 at TJ = 125°C, V = rated VDRM, and i =
rated IDRM.
θJA must be low enough to remove the heat resulting
from conduction losses and insure blocking stability. The
latter can be the limiting factor when circuit voltages are
high. For example, consider a triac operated at 8 amps
(rms) and 8 Watts. The allowed case temperature rise at 25°
ambient is 85°C giving a required θCA (thermal resistance,
case to ambient) of 10.6°C/W. Allowing 1°C/W for θCHS
(thermal resistance, case to heatsink) leaves 9.6°C/W for
θSA (thermal resistance, heatsink to ambient). However,
thermal stability at 600 V and 2 mA IDRM requires θJA =
10.4°C/W. A heatsink with θSA less than 7.4°C/W is
needed, given a junction to case thermal resistance of
2°C/W.
The operation of devices in series does not change the
coefficient A. When matching and thermal tracking is per-
fect, both devices block half the voltage. The leakage cur-
rent and power divide by half and the allowed θJA for
blocking stability increases by 4.
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151
Low duty cycles allow the reduction of the heatsink size.
The thermal capacitance of the heatsink keeps the junction
temperature within specification. The package time
constant (Cpkg RθJA) is long in comparison with the thermal
response time of the die, causing the instantaneous TJ to
rise above the case as it would were the semiconductor
mounted on an infinite heatsink. Heatsink design requires
estimation of the peak case temperature and the use of the
thermal derating curves on the data sheet. The simplest
model applies to a very small heatsink which could be the
semicondutor package itself. When θSA is large in compari-
son with θCHS, it is sufficient to lump both the package and
heatsink capacitances together and treat them as a single
quantity. The models provide good results when the heat-
sink is small and the thermal paths are short.
Model C, Figure 5 is a useful simplification for low duty
cycle applications. Increasing heatsink mass adds thermal
capacitance and reduces peak junction temperature. Heat-
sink thermal resistance is proportional to surface area and
determines the average temperature.
qSA + 32.6 A(*0.47) (3.1)
where A = total surface area in square inches, θSA = thermal
resistance sink to ambient in °C/W.
Analysis of heatsink thermal response to a train of peri-
odic pulses can be treated using the methods in
ON Semiconductor application note AN569 and Figure 6.
For example:
 AN1045/D

θCA

Pd CPKG θCA Pd θCA CPKG

ton TC TC

TA TA

(a.) Standard Thermal Analogue For a Thyristor (b.) Equivalent Circuit For
in Free Air (a)
In Circuit (B): In terms of measurable temperatures:
The steady state case temperature is given by DTCpk
(5.0) T CSS +P d q CA )
T A in °C (5.3) r(t on) +
DTCSS
where Pd = Applied average power, watts
θCA = Case to ambient thermal resistance, °C/W In model (b.) this is
TA = ambient temperature, °C
The package rises toward the steady state temperature expo-
(5.4) r(t on) + (1 * e*tonńt)
nentially with time constant Solving 5-4 for the package capacitance gives

(5.1) t + qCA C PKG, seconds (5.5) C PKG + (θCA In*(1ton* r(ton))

where Cpkg = HM, Joules/°C Use simplified model C when
H = Specific heat, calories/(gm S °C)
t ontt t
M = Mass in grams
and 1 Calorie = 4.184 Joule DTC pk
tt DTCSS
1 Joule = 1 Watt S Sec

The case temperature rise above ambient at the end of

power pulse is:

(5.2) DTCpk + DTCSS(1 * e*tonńt) Pd

CPKG
TC
where DTC pk + * TA
TC
pk
DTCSS + TCSS * TA
To account for thermal capacity, a time dependent factor r(t) is TA
applied to the steady state case-to-ambient thermal resis-
tance. The package thermal resistance, at a given on-time,
is called transient thermal resistance and is given by: (c.) Simplified Model
R qCA (t on) + r(ton) qCA
where r(ton) = Unitless transient thermal impedance
(5.6) T C + PCdPKG
t on
) TA
coefficient.

Figure 6.5. Transient Thermal Response For a Single Power Pulse

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 AN1045/D

Assume the case temperature changes by 40°C for a R (T p)+ (1 * e*180ń150) + .6988
R (t on ) Tp) + (1 * 1 *183ń150) + .7047
single power pulse of 66.67 W and 3 s duration. Then from
equation (5.6):

C pkg + (66.7 Watts)40°C(3 seconds) + 5 Joules

°C
Then from Figure 6:
delta TC = (1.111 + 46.225 + 1.333 – 46.61) 30 = 61.8°C
The heatsink thermal resistance can be determined by If the ambient temperature is 25°C, TC = 87°C.
applying dc power, measuring the final case temperature,
and using equation (5.0). COMPENSATING FOR MAXIMUM
TC * TA + 175-25 + 30°CńW SPECIFIED LEAKAGE
PD 5 Identical value parallel resistors around each triac will
The application requires a 3 s on-time and 180 s period at prevent breakdown resulting from mismatched leakages.
66.7 W. Then Figure 7 derives the method for selecting the maximum

+ (66.7 W) (3ń180) + 1.111 W

allowed resistor size. A worst case design assumes that the
P avg series pair will operate at maximum TJ and that one of the
triacs leaks at the full specified value while the other has no
leakage at all. A conservative design results when the toler-
ances in the shunt resistors place the highest possible resis-
Nth N+1 tor across the low leakage unit and the lowest possible
PULSE PULSE resistor around the high leakage unit.
Pd
This method does not necessarily provide equal voltage
ton
balancing. It prevents triac breakover. Perfect voltage shar-
ing requires expensive high-wattage resistors to provide
tp large bleeder currents.
PAVG

0
IDRM (T2)
) 1) + [PAVG ) (Pd * PAVG) r (ton ) tp) ) Pd r (ton)
I2
DTC (N T2
* Pd r (tp)]qCA R2
∆IL
Where ∆ TC (N + 1) = maximum rise above ambient VS
Pd = applied average power within a pulse IDRM (T1)
PAV G = average power within a period I1
r(ton + tp) = time dependent factor for sum of ton V1
R1
and tp
T1
r(ton) = time dependent factor for ton
r(tp) = time dependent factor for tp

V1 + RV1 S)RR1 2 ) DRI1LR)1RR22

Let R1 = R (1 + p) and R2 = R (1 – p) where
Figure 6.6. Steady State Peak Case Temperature Rise R = Nominal resistor value
p = 0.05 for 5% tolerance, etc.

Using equation (5.3), the theoretical steady state case

x 2 VDRM * VS (1 ) p)
DI (1 * p2)
R
temperature rise is: L
T CSS * TA + (66.7 W) (30°CńW) + 2000°C Worst case becomes:

and IDRM (T1) = 0; IDRM (T2) = Spec. max. value

and ∆IL = Spec. Max. Value
R(t on) + R (3 s) + (40°C measured rise)ń2000 + 0.02 Figure 6.7. Maximum Allowed Resistor for Static
From equation (5.4) and (5.1): Voltage Sharing

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 AN1045/D

COMPENSATION FOR PROBABLE LEAKAGE Theoretically there would be no more than 3.4 triacs per
million exceeding the design tolerance even if the mean
Real triacs have a leakage current greater than zero and less
value of the leakage shifted by plus or minus 1.5 sigma.
than the specified value. Knowledge of the leakage distribu-
tion can be used to reduce resistor power requirements. The
first step is to statistically characterize the product at maxi- SELECTING RESISTORS
mum temperature. Careful control of the temperature is criti-
Small resistors have low voltage ratings which can
cal because leakage depends strongly on it.
impose a lower constraint on maximum voltage than the
The process width is the leakage span at plus or minus 3
triac. A common voltage rating for carbon resistors is:
standard deviations (sigma) from the mean. To minimize
the probability of out of spec parts, use a design capability
index (Cp) of 2.0. Rated Power (W) Maximum Voltage (V)
Cp + (design DI)ń(process width) (4.0)
1/4 Watt 250 Volts

Cp + (12 sigma)ń(6 sigma)

Figure 2 and Figure 7 describe this. Substituting delta IL
at 6 sigma in Figure 7 gives the resistor value. The required
power drops by about 4.
1/2 350
1 500
2 750
Series resistors are used for higher voltage.

I ACTUAL TRIAC

ǒ Ǔ
Rmin
Let V DRM + E RmaxRmax
) Rmin
IDRM MODEL

E
TRIAC
E + VDRM 1 ) IImax
min

Rmax
R max + VIDRM
min
R min + VIDRM
max
(8.0)
VMT2 – 1

VDRM

(a) Equivalent Circuit (b) Model

Figure 6.8. Maximum Voltage Sharing Without Shunt Resistor

OPERATION WITHOUT RESISTORS

Table 1. Normalized leakage and voltage boost factor.
(Mean = 1.0)
Figure 8 derives the method for calculating maximum
Voltage (V) 550 650 550 550 550 550 550
operating voltage. The voltage boost depends on the values

ǒ ) Ǔ+
TJ (°C) 25 25 100 125 125 150 150
of Imin and Imax. For example :
Rshunt — — — — 1.5M 1.5M 510K

131 mA Sample Size 100 100 16 16 16 16 16

1 1.19
683 mA Maximum 1.31 1.59 1.18 1.22 1.12 1.34 1.18
5 1 7 8 3 6 6
A 19 percent voltage boost is possible with the 6 sigma Minimum 0.72 0.68 0.84 0.83 0.92 0.82 0.87
design. Testing to the measured maximum and minimum of 9 1 0 5 0 0 7

the sample allows the boost to approach the values given in Sigma 0.116 0.17 0.10 0.113 0.05 0.13 0.08
2 6 5 2 4
Table 1.
Sample Boost 1.55 1.43 1.71 1.68 1.82 1.61 1.74
(1 ) 0.835ń1.228) + 1.68 6 Sigma Boost 1.18 1.00 1.22 1.19 1.50 1.12 1.33

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 AN1045/D

COMPENSATING FOR SURFACE LEAKAGE
A small low power shunt resistance will provide nearly per-
fect low temperature voltage sharing and will improve high
temperature performance. It defines the minimum leakage
current of the parallel triac-resistor combination. The design
method in Figure 8 can be used by adding the resistor current
to the measured maximum and minimum leakage currents of
Triacs can tolerate very high rates of voltage rise when
the peak voltage magnitude is below the threshold needed
to trigger the device on. This behavior is a consequence of
the voltage divider action between the device collector and
gate-cathode junction capacitances. If the rise-time is made
short in comparison with minority carrier lifetime, voltage
and displaced charge determine whether the device triggers

ǒǓ
on or not. Series operation will extend the range of voltage
the triac sample. This is described in Table 1.
and load conditions where a static dV snubber is not
dt
SERIES dV

ǒǓ
dt s needed.
Figure 10 graphs the results of measurements on two
The series connection will provide twice the dV
dt s series connected triacs operated without snubbers. The
capability of the lowest device in the pair (Figure 9). series connection doubled the allowed step voltage. How-
Dynamic matching without a snubber network depends ever, this voltage remained far below the combined 1200 V
on equality of the thyristor self capacitance. There is little breakover voltage of the pair.
variation in junction capacitance. Device gain variations
800
introduce most of the spread in triac performance.
The blocking junction capacitance of a thyristor is a 700

MAXIMUM STEP VOLTAGE (V)

declining function of dc bias voltage. Mismatch in static
600
blocking voltage will contribute to unequal capacitances.
However, this effect is small at voltages beyond a few volts. 500
The attachment of a heatsink at the high-impedance node 400
formed by connection of the triac main-terminals can also V
contribute to imbalance by introducing stray capacitance to 300
ground. This can be made insignificant by adding small 200
dV
dt
u ń
10 kV ms
capacitors in parallel with the triacs. Snubbers will serve f = 10 Hz
100 pw = 100 µs
the same purpose.
0
0 20 40 60 80 100 120 140 160
10,000 TJ (°C)
9 Figure 6.10. Step Blocking Voltage VS
8
TJ (Unsnubbed Series Triacs)

ǒǓ
7
6
5
4 Exponential dV tests performed at 1000 V and less
dt s
3 1
than 2 kV/µs showed that turn-on of the series pair can
EXPONENTIAL STATIC dv/dtS (V/ µs)

2 R C
occur because of breakdown or dV . The former was the
dt
2 limiting factor at junction temperatures below 100°C. Per-
formance improved with temperature because device gain
1000 R C aided voltage sharing. The triac with the highest current
9
8 gain in the pair is most likely to turn-on. However, this
7
6 1 device has the largest effective capacitance. Consequently
5
4
it is exposed to less voltage and dV . At higher tempera-
R = 270 kΩ dt
3 C = 1000 pF tures, rate effects dominated over voltage magnitudes, and
Vpk = 1000 V
the capability of the series pair fell. dV performance of the
2 dt
series devices was always better than that of a single triac
alone.
100
0 15 30 45 60 75 90 105 120 135 150 TURNOFF
JUNCTION TEMPERATURE (TJ) °C
Process tolerances cause small variations in triac turn-off
Figure 6.9. Exponential Static dV/dt, Series time. Series operation will allow most of the reapplied
MAC15-8 Triacs blocking voltage to appear across the faster triac when a
dynamic voltage sharing network is not used.

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 AN1045/D

Figure 11 describes the circuit used to investigate this
behavior. It is a capacitor discharge circuit with the load
series resonant at 60 Hz. This method of testing is desirable
because of the reduced burn and shock hazard resulting
from the limited energy storage in the load capacitor.
The triacs were mounted on a temperature controlled
hotplate. The single pulse non-repetitive test aids junction
temperature control and allows the use of lower power
rated components in the snubber and load circuit.

PEARSON 301X CL
1 – PROBE
15K CL
13K G2 2W 510 MT1, T2 MT1

TRIAD C30X 50H, 3500 Ω

15K
Rs LL
2W G2 270K
S1 910
MT2 T2 2W S2
S4A MOC3081 G2 Cs Hg
11 2.2 Meg RELAY
+ Ω 910
100 V 2W 1/2W
– MT2
Cs
G1 1N4001 G1 270K
S1 2.2 Meg T1 2W
+ S3
20 µF PUSH TO MT1 Rs

MOC3081
TEST G1 CL VCC
200 V
S4B 1.5 kV
510
MT1, T1
(a) Triac Gate S1 = GORDES MR988 REED WOUND (c) Load Circuit
Circuit WITH 1 LAYER AWG #18
LL = 320 MHY
CL = 24 µFD, NON-POLAR

REVERSE S4 AND VCC TO

CHECK OPPOSITE POLARITY.
(b) Optocoupler Gate Circuit

Figure 6.11. ǒdVǓ cTest Circuit

dt

Snubberless turn-off at 1200 V and 320 milli-henry
resulted in 800 V peak and 100 V/µs. Although this test
exceeded the ratings of the triacs, they turned off success-
fully.
Snubberless operation is allowable when:
1. The total transient voltage across both triacs does not
exceed the rating for a single device. This voltage
depends on the load phase angle, self capacitance of
the load and triac, damping constant, and natural res-
onance of the circuit.
2. The total ǒdVǓ across the series combination does
dt c
not exceed the capability of a single device.
Maximum turn-off voltage capability and tolerance for
variable loads requires the use of a snubber network to pro-
vide equal dynamic voltage sharing. Figure 12 and
Figure 13 derives the minimum size snubber capacitor
allowed. It is determined by the recovery charge of the
triac. Measurements in fast current crossing applications
suggest that the reverse recovery charge is less than 2
micro-coulombs. Recovery currents cannot be much
greater than IH or IGT, or the triac would never turn-off.
Recovery can be forward, reverse, or near zero current
depending on conditions.
Snubber design for the series switch has the following
objectives:
• Controlling the voltage peak. Resonant charging will
magnify the turn-off voltage.
• Controlling the voltage rate. Peak voltage trades with
voltage rate.
• Equalizing the voltage across the series devices by
providing for imbalance in turn-off charge.
Designs that satisfy the first two objectives will usually
provide capacitor values above the minimum size. Select
the snubber for a satisfactory compromise between voltage
and dV . Then check the capacitor to insure that it is suffi-
dt
ciently large.

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 AN1045/D

dl CAPABILITY
VMT2-1 dt
AND

ǒǓ
IMT2
C2
dI
The hazard of thyristor damage by dl overstress is
V2 dt
T2 Q+∆ dt c
Q2 greater when circuit operating voltages are high because dl
VS Q dt
φ t
∆Q is proportional to voltage. Damage by short duration tran-
∆Q
T1 C1 Q
VDRM
IRRM (dv/dt)c sients is possible even though the pulse is undetectable
Q 1 when observed with non-storage oscilloscopes. This type
VMT2-1
of damage can be consequence of snubber design, tran-
Worst case: sients, or parasitic capacitances.

ǒǓ
C2 + C(1 ) p); C1 + C(1 * p); Q1 + 0; Q2 + DQ A thyristor can be triggered on by gate current, exceeding
where C = Nominal value of capacitor
its breakdown voltage, or by exceeding its dV capabili-
and p = 0.1 for 10% tolerance, etc. dt s
∆Q = Reverse recovery charge ty. In the latter case, a trigger current is generated by charg-
ing of the internal depletion layer capacitance in the device.
Note that T1 has no charge while T2 carries full
recovery charge. This effect aids turn-on current spreading, although dam-
age can still occur if the rate of follow on dl is high. Repeti-
For the model shown above, dt

+ QC11 ) QC22 + C(1Q*1 p) ) QC(11 *)Dp)Q

tive operation off the ac line at voltages above breakdown is
VS a worst case condition. Quadrant 3 has a slightly slower
gated turn-on time, increasing the chance of damage in this
Cy
DQ
2 V DRM * V S(1 ) p)
direction. Higher operating voltages raise power density
and local heating, increasing the possibility of die damage
due to hot-spots and thermal run-away.
Figure 6.12. Minimum Capacitor Size for Dynamic
Voltage Sharing

Snubber designs for static, commutating, and combined dV

dt T106-6
stress are shown in Table 2. Circuits switching the line or a RE1 R
charged capacitor across a blocking triac require the addition NON-INDUCTIVE L *S1
G
MT1
of a series snubber inductor. The snubber must be designed 5K
200W 1K
for maximum dV with the minimum circuit inductance. This 0–6 kV
2W
dt CARBON MT2
contraint increases the required triac blocking voltage. 1/2A
60 Hz
QTY = 6 TO 16 MKP1V130 MT2

ǒǓ ǒǓ
Table 2. Snubber Designs C
G MT1
dV dV PEARSON
Type dt c dt s Both 411 I
L (mh) 320 0.4 320 PROBE

RL Ohm 8 0 8
Rs Ohm 1820 48 48
Cs (µf) 0.5 0.5 0.5
Damping Ratio 1.14 0.85 .035 Vci C L R dl/dt Rejects
V µFD µHY Ω A/µs Tested
Vstep (V) 1200 1200 750
1000 4.06 3.4 5.7 100 0/100
Vpk (V) 1332 1400 1423
1900* 1.05 7.9 5.7 179 0/195
tpk (µs) 768 29.8 1230
1500 0.002 0.3 10 3000 3/10
dV (V/µs) 4.6 103 1.3
dt * Open S1 to test breakover dl/dt

Note: Divide Rs and dV by 2, multiply Cs by 2 for each triac.

dt Figure 6.13. dl/dt Test Circuit

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 AN1045/D

Ideally, turn-on speed mismatch should not be allowed to turn-on. Alternatively, a large triac capable of surviving the
force the slower thyristor into breakdown. An RC snubber surge can be used.
across each thyristor prevents this. In the worst case, one
device turns on instantly while the other switches at the
slowest possible turn-on time. The rate of voltage rise at the
lpk
+ V2LIRs, where VI is the maxi-
T2
slower device is roughly dV IH1
∆
dt ∆Q
mum voltage across L. This rate should not allow the volt- Q
IH2
age to exceed VDRM in less than Tgt to prevent breakover.
But what if the thyristors are operated without a snubber, or T1 ωt = 0 t1 t2
if avalanche occurs because of a transient overvoltage
condition?
The circuit in Figure 13 was constructed to investigate DQ

ŕ
for turn-off at I
this behavior. The capacitor, resistor, and inductor create a H
t2
pulse forming network to shape the current wave. The ini-
DQ + + pk
w (cos wt1 * cos wt2)
I
tial voltage on the capacitor was set by a series string of I pk SINwt dt
sidac bidirectional breakover devices. t1
Test results showed that operation of the triac switch was I H1+ Ipk Sinwt1
thus t 1 + 1 Sin *1
safe as long as the rate of current rise was below 200 A/µs. I H1
This was true even when the devices turned on because of w I pk
breakover. However, a 0.002 µf capacitor with no series
limiting impedance was sufficient to cause damage in the Worst case : I H2 + 0; f 2 + wt 2 + p

Ǹ ǒ Ǔ ȣȧȤ
Q3 firing polarity.
DQ + w ) cos[SIN*1 IIH1
I pk
Circuit malfunctions because of breakover will be tem- (1 ])

ȡȧ )
porary if the triac is not damaged. Test results suggest that pk
there will be no damage when the series inductance is suffi- 2
DQ + w
Ȣ *
cient to hold dl/dt to acceptable values. Highly energetic I pk I H1
1 I
transients such as those resulting from lightning strikes can I pk
cause damage to the thyristor by I2t surge overstress.
Device survival requires the use of voltage limiting devices
in the circuit and dV limiting snubbers to prevent unwanted Figure 6.14. Forward Recovery Charge for Turn-Off at lH
dt

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AN1048/D

RC Snubber Networks
For Thyristor
Power Control and
Transient Suppression
http://onsemi.com

By George Templeton APPLICATION NOTE

Thyristor Applications Engineer

INTRODUCTION

Edited and Updated

RC networks are used to control voltage transients that

could falsely turn-on a thyristor. These networks are called
ǒǓ
dV DEVICE PHYSICS
dt s
snubbers.
The simple snubber consists of a series resistor and Static dV turn-on is a consequence of the Miller effect
dt
capacitor placed around the thyristor. These components and regeneration (Figure 1). A change in voltage across the

ǒǓ
along with the load inductance form a series CRL circuit. junction capacitance induces a current through it. This cur-
Snubber theory follows from the solution of the circuit’s
rent is proportional to the rate of voltage change dV . It
differential equation. dt
Many RC combinations are capable of providing accept- triggers the device on when it becomes large enough to
able performance. However, improperly used snubbers can raise the sum of the NPN and PNP transistor alphas to unity.
cause unreliable circuit operation and damage to the semi-
conductor device. A
Both turn-on and turn-off protection may be necessary A
for reliability. Sometimes the thyristor must function with a IA
IB PE
range of load values. The type of thyristors used, circuit P
V
PNP
configuration, and load characteristics are influential. I1 CJ
P IJ IC NB
CJ P
Snubber design involves compromises. They include IC
N
I2
CJ C
N dv
cost, voltage rate, peak voltage, and turn-on stress. Practi- IJ
dt
G PB
NPN G t
cal solutions depend on device and circuit physics. IB
N NE
IK dV
CJ
STATIC dV K IA +1* (aN
dt
) ap)
dt K
+ 1*(aN)ap)
TWO TRANSISTOR MODEL CJ
OF CEFF INTEGRATED
WHAT IS STATIC dV ? SCR STRUCTURE
dt

ǒǓ
Static dV is a measure of the ability of a thyristor to
dt
retain a blocking state under the influence of a voltage dV
Figure 6.1. Model
transient. dt s

 Semiconductor Components Industries, LLC, 1999 159 Publication Order Number:

August, 1999 – Rev. 2 AN1048/D
 AN1048/D

170
CONDITIONS INFLUENCING ǒdVǓ
dt s 150
Transients occurring at line crossing or when there is no MAC 228A10
130
initial voltage across the thyristor are worst case. The col- VPK = 800 V

STATIC dV (V/ µs)

lector junction capacitance is greatest then because the 110
depletion layer widens at higher voltage. 90

dt
Small transients are incapable of charging the self-
capacitance of the gate layer to its forward biased threshold 70
voltage (Figure 2). Capacitance voltage divider action 50
between the collector and gate-cathode junctions and built-
30
in resistors that shunt current away from the cathode emit-
ter are responsible for this effect. 10
25 40 55 70 85 100 115 130 145
TJ, JUNCTION TEMPERATURE (°C)
180
dV
Figure 6.3. Exponential ǒ Ǔ versus Temperature
160 dt s
MAC 228A10 TRIAC
140
TJ = 110°C
ǒdVǓ FAILURE MODE
STATIC dV (V/ µs)

120 dt s
100 Occasional unwanted turn-on by a transient may be
dt

80
acceptable in a heater circuit but isn’t in a fire prevention
sprinkler system or for the control of a large motor. Turn-on
60 is destructive when the follow-on current amplitude or rate
40 is excessive. If the thyristor shorts the power line or a
20
charged capacitor, it will be damaged.
0 100 200 300 400 500 600 700 800 Static dV turn-on is non-destructive when series imped-
dt
PEAK MAIN TERMINAL VOLTAGE (VOLTS)
ance limits the surge. The thyristor turns off after a half-
dV
Figure 6.2. Exponential ǒ Ǔ versus Peak Voltage cycle of conduction. High dV aids current spreading in the
dt s dt
thyristor, improving its ability to withstand dI. Breakdown
dt
turn-on does not have this benefit and should be prevented.
Static dV does not depend strongly on voltage for opera-
dt
tion below the maximum voltage and temperature rating. 140
Avalanche multiplication will increase leakage current and
120
reduce dV capability if a transient is within roughly 50 volts MAC 228A10
dt 100 800 V 110°C
of the actual device breakover voltage.
STATIC dV (V/ µs)

A higher rated voltage device guarantees increased dV at 80

dt
dt

lower voltage. This is a consequence of the exponential rat- 60

ing method where a 400 V device rated at 50 V/µs has a
40 RINTERNAL = 600 Ω
higher dV to 200 V than a 200 V device with an identical
dt
rating. However, the same diffusion recipe usually applies 20
for all voltages. So actual capabilities of the product are not 0
much different. 10 100 1000 10,000
Heat increases current gain and leakage, lowering GATE-MT1 RESISTANCE (OHMS)

ǒdVǓ , the gate trigger voltage and noise immunity ǒdVǓ

dt s Figure 6.4. Exponential dt s versus
(Figure 3). Gate to MT1 Resistance

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 AN1048/D

IMPROVING dV
dt s
ǒǓ 10
MEG MCR22-006
TA = 65°C

GATE-CATHODE RESISTANCE (OHMS)

Static dV can be improved by adding an external resistor A
dt 10
from the gate to MT1 (Figure 4). The resistor provides a V G
1
K
path for leakage and dV induced currents that originate in MEG
dt
the drive circuit or the thyristor itself.
Non-sensitive devices (Figure 5) have internal shorting
resistors dispersed throughout the chip’s cathode area. This 100
design feature improves noise immunity and high tempera- K
ture blocking stability at the expense of increased trigger
and holding current. External resistors are optional for non-
sensitive SCRs and TRIACs. They should be comparable in 10K
size to the internal shorting resistance of the device (20 to 0.001 0.01 0.1 1 10 100
ń
ǒǓ
100 ohms) to provide maximum improvement. The internal STATIC dV (V ms)
dt
resistance of the thyristor should be measured with an ohm-
meter that does not forward bias a diode junction. dV
Figure 6.6. Exponential dt versus
s
Gate-Cathode Resistance
A gate-cathode capacitor (Figure 7) provides a shunt
2200
path for transient currents in the same manner as the resis-
tor. It also filters noise currents from the drive circuit and
2000 enhances the built-in gate-cathode capacitance voltage
MAC 15-8
1800 VPK = 600 V divider effect. The gate drive circuit needs to be able to
STATIC dV (V/ µs)

charge the capacitor without excessive delay, but it does

1600
not need to supply continuous current as it would for a
dt

1400
resistor that increases dV the same amount. However, the
1200
dt
capacitor does not enhance static thermal stability.
1000
130
800
120
600 MAC 228A10

ǒǓ
50 60 70 80 90 100 110 120 130 800 V 110°C
110
STATIC dV (V/ µs)

TJ, JUNCTION TEMPERATURE (°C)

dV 100
Figure 6.5. Exponential dt s versus
dt

Junction Temperature 90

80

70

Sensitive gate TRIACs run 100 to 1000 ohms. With an 60

0.001 0.01 0.1 1
external resistor, their dV capability remains inferior to

ǒǓ
dt GATE TO MT1 CAPACITANCE (µF)
non-sensitive devices because lateral resistance within the
dV

t
gate layer reduces its benefit. Figure 6.7. Exponential dt versus Gate

ǒǓ
s
Sensitive gate SCRs (IGT 200 µA) have no built-in to MT1 Capacitance
resistor. They should be used with an external resistor. The

ǒǓ
recommended value of the resistor is 1000 ohms. Higher
values reduce maximum operating temperature and dV
dt s
(Figure 6). The capability of these parts varies by more than
100 to 1 depending on gate-cathode termination.
The maximum dV improvement occurs with a short.
dt s
Actual improvement stops before this because of spreading
resistance in the thyristor. An external capacitor of about
0.1 µF allows the maximum enhancement at a higher value
of RGK.

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 AN1048/D

One should keep the thyristor cool for the highest dV ǒǓ .

for sinusoidal currents is given by the slope of the secant

ǒǓ+
dt s line between the 50% and 0% levels as:
Also devices should be tested in the application circuit at
the highest possible temperature using thyristors with the dI
dt c
6 f I TM
1000
A msń
lowest measured trigger current.
where f = line frequency and ITM = maximum on-state cur-
TRIAC COMMUTATING dV rent in the TRIAC.
dt Turn-off depends on both the Miller effect displacement
WHAT IS COMMUTATING dV ? current generated by dV across the collector capacitance
dt dt
dV
and the currents resulting from internal charge storage
The commutating rating applies when a TRIAC has within the volume of the device (Figure 10). If the reverse
dt
been conducting and attempts to turn-off with an inductive recovery current resulting from both these components is
load. The current and voltage are out of phase (Figure 8). high, the lateral IR drop within the TRIAC base layer will
The TRIAC attempts to turn-off as the current drops below forward bias the emitter and turn the TRIAC on. Commu-
the holding value. Now the line voltage is high and in the tating dV capability is lower when turning off from the pos-
opposite polarity to the direction of conduction. Successful dt
itive direction of current conduction because of device
turn-off requires the voltage across the TRIAC to rise to the
geometry. The gate is on the top of the die and obstructs
instantaneous line voltage at a rate slow enough to prevent
current flow.
retriggering of the device.
Recombination takes place throughout the conduction
period and along the back side of the current wave as it

ǒǓ
VOLTAGE/CURRENT

R L declines to zero. Turn-off capability depends on its shape. If

i 2
VLINE G VMT2-1 the current amplitude is small and its zero crossing dI is
dt c

ǒǓ ǒǓ
1
low, there is little volume charge storage and turn-off
VMT2-1

dI
PHASE dt c becomes limited by dV . At moderate current amplitudes,
ANGLE dt s
the volume charge begins to influence turn-off, requiring a

ǒǓ
Φ

ǒǓ
TIME larger snubber. When the current is large or has rapid zero
TIME
dV crossing, dV has little influence. Commutating dI and
i VLINE dt c dt c dt

ǒǓ
delay time to voltage reapplication determine whether turn-
dV off will be successful or not (Figures 11, 12).
Figure 6.8. TRIAC Inductive Load Turn-Off
dt c

ǒǓ
dV DEVICE PHYSICS
dt c
G MT1
TOP

A TRIAC functions like two SCRs connected in inverse-

N N N N
parallel. So, a transient of either polarity turns it on. P
There is charge within the crystal’s volume because of Previously
prior conduction (Figure 9). The charge at the boundaries

ǒǓ ǒǓ
Conducting Side
N
of the collector junction depletion layer responsible for

ǒǓ
dV is also present. TRIACs have lower dV than + –
dt s dt c
N N N
dV because of this additional charge.
dt s
The volume charge storage within the TRIAC depends

ǒǓ
REVERSE RECOVERY MT2 STORED CHARGE
on the peak current before turn-off and its rate of zero CURRENT PATH LATERAL VOLTAGE FROM POSITIVE
CONDUCTION

ǒǓ
crossing dI . In the classic circuit, the load impedance DROP
dt c
Figure 6.9. TRIAC Structure and Current Flow
and line frequency determine dI . The rate of crossing
dt c at Commutation

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 AN1048/D

CONDITIONS INFLUENCING dV ǒǓ
ǒǓ
VOLTAGE/CURRENT dt c

di Commutating dV depends on charge storage and recov-

ǒǓ
dt c dt
ery dynamics in addition to the variables influencing static
dV
dt c dV. High temperatures increase minority carrier life-time
dt
TIME and the size of recovery currents, making turn-off more dif-
0
ficult. Loads that slow the rate of current zero-crossing aid
turn-off. Those with harmonic content hinder turn-off.
VMT2-1 CHARGE
DUE TO Circuit Examples
VOLUME dV/dt
IRRM Figure 13 shows a TRIAC controlling an inductive load
STORAGE
CHARGE in a bridge. The inductive load has a time constant longer
than the line period. This causes the load current to remain
constant and the TRIAC current to switch rapidly as the line

ǒǓ
Figure 6.10. TRIAC Current and Voltage
at Commutation voltage reverses. This application is notorious for causing
TRIAC turn-off difficulty because of high dI .
dt c

RS C

E i

ǒǓ
V LS
MAIN TERMINAL VOLTAGE (V)

dI
dt c DC MOTOR
i – +
60 Hz R L

ǒu Ǔ
t
E L 8.3 ms
R

Figure 6.13. Phase Controlling a Motor in a Bridge

VT
High currents lead to high junction temperatures and
0 td TIME
rates of current crossing. Motors can have 5 to 6 times the
normal current amplitude at start-up. This increases both
Figure 6.11. Snubber Delay Time
junction temperature and the rate of current crossing, lead-
ing to turn-off problems.
The line frequency causes high rates of current crossing
in 400 Hz applications. Resonant transformer circuits are
doubly periodic and have current harmonics at both the pri-
0.5 mary and secondary resonance. Non-sinusoidal currents
NORMALIZED DELAY TIME

0.2 can lead to turn-off difficulty even if the current amplitude

ǒǓ
0.2 0.1 is low before zero-crossing.
(t d* = W0 td)

0.05
0.1 dV FAILURE MODE

ǒǓ
dt c
0.05 0.02
RL = 0 dV failure causes a loss of phase control. Temporary
0.03 M=1 0.01 dt c
0.02 IRRM = 0 V
T 0.005 turn-on or total turn-off failure is possible. This can be
E destructive if the TRIAC conducts asymmetrically causing a
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1 dc current component and magnetic saturation. The winding
DAMPING FACTOR resistance limits the current. Failure results because of
Figure 6.12. Delay Time To Normalized Voltage excessive surge current and junction temperature.

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 AN1048/D

IMPROVING dV ǒǓ + 0.4
Hs ML

ǒǓ ǒǓ
dt c Is where :
p N
Hs = MMF to saturate = 0.5 Oersted
The same steps that improve dV aid dV except ML = mean magnetic path length = 4.99 cm.
dt s dt c
when stored charge dominates turn-off. Steps that reduce Is + (.5).4 p(4.99)
33
+ 60 mA.
the stored charge or soften the commutation are necessary
then.
Larger TRIACs have better turn-off capability than SNUBBER PHYSICS
smaller ones with a given load. The current density is lower UNDAMPED NATURAL RESONANCE
I Radiansńsecond
+ ǸLC
in the larger device allowing recombination to claim a
greater proportion of the internal charge. Also junction w0
temperatures are lower.
TRIACs with high gate trigger currents have greater Resonance determines dV and boosts the peak capacitor
turn-off ability because of lower spreading resistance in the dt
voltage when the snubber resistor is small. C and L are
gate layer, reduced Miller effect, or shorter lifetime.
The rate of current crossing can be adjusted by adding a related to one another by ω02. dV scales linearly with ω0
dt
commutation softening inductor in series with the load. when the damping factor is held constant. A ten to one
Small high permeability “square loop” inductors saturate reduction in dV requires a 100 to 1 increase in either
causing no significant disturbance to the load current. The dt
inductor resets as the current crosses zero introducing a component.

Ǹ
large inductance into the snubber circuit at that time. This DAMPING FACTOR
slows the current crossing and delays the reapplication of
blocking voltage aiding turn-off.
The commutation inductor is a circuit element that
ρ + R2 C
L
introduces time delay, as opposed to inductance, into the The damping factor is proportional to the ratio of the
circuit. It will have little influence on observed dV at the circuit loss and its surge impedance. It determines the trade
dt
device. The following example illustrates the improvement off between dV and peak voltage. Damping factors between
dt
resulting from the addition of an inductor constructed by 0.01 and 1.0 are recommended.
winding 33 turns of number 18 wire on a tape wound core
(52000-1A). This core is very small having an outside The Snubber Resistor
diameter of 3/4 inch and a thickness of 1/8 inch. The delay
Damping and dV
time can be calculated from: dt
When ρ t 0.5, the snubber resistor is small, and dVdt
ts + (N A BE10*8) where: depends mostly on resonance. There is little improvement
in dV for damping factors less than 0.3, but peak voltage
dt
ts = time delay to saturation in seconds. and snubber discharge current increase. The voltage wave
B = saturating flux density in Gauss has a 1-COS (θ) shape with overshoot and ringing. Maxi-
A = effective core cross sectional area in cm2
mum dV occurs at a time later than t = 0. There is a time
N = number of turns. dt
delay before the voltage rise, and the peak voltage almost

For the described inductor:
ts + (33 turns) (0.076 cm2 ) (28000 Gauss)
(1 10 –8 ) ń (175 V) + 4.0 ms.
The saturation current of the inductor does not need to be
much larger than the TRIAC trigger current. Turn-off fail-
ure will result before recovery currents become greater than
this value. This criterion allows sizing the inductor with the
following equation:
u
doubles.
When ρ 0.5, the voltage wave is nearly exponential in
shape. The maximum instantaneous dV occurs at t = 0.
dt
There is little time delay and moderate voltage overshoot.
When ρ u 1.0, the snubber resistor is large and dVdt
depends mostly on its value. There is some overshoot even
through the circuit is overdamped.
High load inductance requires large snubber resistors and
small snubber capacitors. Low inductances imply small
resistors and large capacitors.

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 AN1048/D

Damping and Transient Voltages Table 1 shows suggested minimum resistor values esti-
Figure 14 shows a series inductor and filter capacitor mated (Appendix A) by testing a 20 piece sample from the
connected across the ac main line. The peak to peak voltage four different TRIAC die sizes.
of a transient disturbance increases by nearly four times.
Also the duration of the disturbance spreads because of Table 1. Minimum Non-inductive Snubber Resistor
ringing, increasing the chance of malfunction or damage to for Four Quadrant Triggering.
the voltage sensitive circuit. Closing a switch causes this
dI
behavior. The problem can be reduced by adding a damping Peak VC Rs dt
resistor in series with the capacitor. TRIAC Type Volts Ohms A/µs
Non-Sensitive Gate 200 3.3 170
(IGTu 10 mA) 300 6.8 250
100 µH 0.05 8 to 40 A(RMS) 400 11 308
600 39 400
340 V 800 51 400
0.1 VOLTAGE
0 10 µs µF V SENSITIVE
CIRCUIT
Reducing dI
+ 700
dt

TRIAC dI can be improved by avoiding quadrant 4

V (VOLTS)

0 triggering. Most optocoupler circuits operate the TRIAC in
– 700
0 10
TIME (µs)
Figure 6.14. Undamped LC Filter Magnifies and
Lengthens a Transient
dI
dt
Non-Inductive Resistor
The snubber resistor limits the capacitor discharge
current and reduces dI stress. High dI destroys the thyristor
dt dt
even though the pulse duration is very short.
The rate of current rise is directly proportional to circuit
voltage and inversely proportional to series inductance.
The snubber is often the major offender because of its low
inductance and close proximity to the thyristor.
With no transient suppressor, breakdown of the thyristor
sets the maximum voltage on the capacitor. It is possible to
exceed the highest rated voltage in the device series
because high voltage devices are often used to supply low
voltage specifications.
The minimum value of the snubber resistor depends on
the type of thyristor, triggering quadrants, gate current
amplitude, voltage, repetitive or non-repetitive operation,
and required life expectancy. There is no simple way to pre-
dict the rate of current rise because it depends on turn-on
speed of the thyristor, circuit layout, type and size of snub-
ber capacitor, and inductance in the snubber resistor. The
equations in Appendix D describe the circuit. However, the
values required for the model are not easily obtained except
by testing. Therefore, reliability should be verified in the
actual application circuit.
dt
quadrants 1 and 3. Integrated circuit drivers use quadrants 2
and 3. Zero crossing trigger devices are helpful because
20 they prohibit triggering when the voltage is high.
Driving the gate with a high amplitude fast rise pulse
increases dI capability. The gate ratings section defines the
dt
maximum allowed current.
Inductance in series with the snubber capacitor reduces
dI. It should not be more than five percent of the load
dt
inductance to prevent degradation of the snubber’s dV
dt
suppression capability. Wirewound snubber resistors
sometimes serve this purpose. Alternatively, a separate
inductor can be added in series with the snubber capacitor.
It can be small because it does not need to carry the load
current. For example, 18 turns of AWG No. 20 wire on a
T50-3 (1/2 inch) powdered iron core creates a non-saturat-
ing 6.0 µH inductor.
A 10 ohm, 0.33 µF snubber charged to 650 volts resulted
in a 1000 A/µs dI. Replacement of the non-inductive snub-
dt
ber resistor with a 20 watt wirewound unit lowered the rate
of rise to a non-destructive 170 A/µs at 800 V. The inductor
gave an 80 A/µs rise at 800 V with the non–inductive
resistor.
The Snubber Capacitor
A damping factor of 0.3 minimizes the size of the snub-
ber capacitor for a given value of dV. This reduces the cost
dt
and physical dimensions of the capacitor. However, it raises
voltage causing a counter balancing cost increase.
Snubber operation relies on the charging of the snubber
capacitor. Turn-off snubbers need a minimum conduction
angle long enough to discharge the capacitor. It should be at
least several time constants (RS CS).

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STORED ENERGY snubber inductor and limits the rate of inrush current if the
Inductive Switching Transients device does turn on. Resistance in the load lowers dV and
dt
E + 12 L I 0 2 Watt-seconds or Joules VPK (Figure 16).

I0 = current in Amperes flowing in the

1.4 2.2
inductor at t = 0. E
Resonant charging cannot boost the supply voltage at dV 2.1
dt
turn-off by more than 2. If there is an initial current flowing 1.2 2
VPK
in the load inductance at turn-off, much higher voltages are 1.9
possible. Energy storage is negligible when a TRIAC turns
1 1.8

NORMALIZED PEAK VOLTAGE

off because of its low holding or recovery current. M = 0.75
M=1
The presence of an additional switch such as a relay, ther- 1.7

NORMALIZED dV
dt
mostat or breaker allows the interruption of load current and 0.8 1.6

(dVdt)/ (E W0 )
the generation of high spike voltages at switch opening. The

VPK /E
1.5
energy in the inductance transfers into the circuit capacitance M = 0.5
0.6 1.4
and determines the peak voltage (Figure 15).
M = 0.25 1.3

L 0.4 1.2

I M=0 1.1
R 0.2 1
OPTIONAL
VPK M = RS / (RL + RS) 0.9

ǒ Ǔ
C FAST 0
0 0.2 0.4 0.6 0.8 1
SLOW
DAMPING FACTOR

dV
dt
+ I V
C PK
+I Ǹ L
C
M + RESISTIVE DIVISION RATIO + RL R)S RS
I
RRM
+0
(b.) Unprotected Circuit Figure 6.16. 0 To 63% dV
(a.) Protected Circuit dt

Figure 6.15. Interrupting Inductive Load Current

CHARACTERISTIC VOLTAGE WAVES
Capacitor Discharge Damping factor and reverse recovery current determine

ǒ Ǔ
T h e e n e rg y s t o r e d i n t h e s n u b b e r c a p a c i t o r the shape of the voltage wave. It is not exponential when
Ec + 12 C V2 transfers to the snubber resistor and
the snubber damping factor is less than 0.5 (Figure 17) or
when significant recovery currents are present.
thyristor every time it turns on. The power loss is propor-
tional to frequency (PAV = 120 Ec @ 60 Hz). ρ = 0.1
ρ=0
500
V MT (VOLTS)

CURRENT DIVERSION 400

The current flowing in the load inductor cannot change 300 0.1
0.3
2-1

instantly. This current diverts through the snubber resistor 200 1 ρ = 0.3 ρ=1
causing a spike of theoretically infinite dV with magnitude 100 0
dt 0
equal to (IRRM R) or (IH R). 0 0.7 1.4 2.1 2.8 3.5 4.2 4.9 5.6 6.3 7

ƪ ǒǓ ƫ
TIME (µs)
LOAD PHASE ANGLE

ǒǓ Highly inductive loads cause increased voltage and *

0 63% dV
dt s
+ 100 Vńms, E + 250 V,
+ 0, IRRM + 0
ǒǓ
dV at turn-off. However, they help to protect the R
dt c L
Figure 6.17. Voltage Waves For Different
thyristor from transients and dV . The load serves as the Damping Factors
dt s

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2.8 COMPLEX LOADS

2.6 Many real-world inductances are non-linear. Their core

ǒǓ
E 0–63%
2.4 materials are not gapped causing inductance to vary with
dV
dV
dt
2.2 dV MAX dt current amplitude. Small signal measurements poorly char-
NORMALIZED PEAK VOLTAGE AND 2 dt
acterize them. For modeling purposes, it is best to measure
1.8 them in the actual application.
10–63%
1.6 Complex load circuits should be checked for transient
1.4 voltages and currents at turn-on and off. With a capacitive
10–63 VPK
1.2 load, turn-on at peak input voltage causes the maximum
dV
%
1 dt surge current. Motor starting current runs 4 to 6 times the
0.8 steady state value. Generator action can boost voltages

ǒǓ
0.6 above the line value. Incandescent lamps have cold start
0.4 dV currents 10 to 20 times the steady state value. Transformers
0.2 dt o generate voltage spikes when they are energized. Power
0 factor correction circuits and switching devices create
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
DAMPING FACTOR (ρ) complex loads. In most cases, the simple CRL model
(RL + +0, M 1, I RRM + 0) allows an approximate snubber design. However, there is

NORMALIZED dV + dVńdt NORMALIZED V PK + VEPK

no substitute for testing and measuring the worst case load
conditions.
dt E w0

Figure 6.18. Trade-Off Between VPK and dV
dt
A variety of wave parameters (Figure 18) describe dV
dt
Some are easy to solve for and assist understanding. These
include the initial dV, the maximum instantaneous dV, and
dt
SURGE CURRENTS IN INDUCTIVE CIRCUITS
Inductive loads with long L/R time constants cause
asymmetric multi-cycle surges at start up (Figure 20). Trig-
gering at zero voltage crossing is the worst case condition.
The surge can be eliminated by triggering at the zero cur-
rent crossing angle.
dt

ǒǓ ǒǓ
the average dV to the peak reapplied voltage. The 0 to 63%
dt
20 MHY
dV and 10 to 63% dV definitions on device data 240 i 0.1
dt s dt c
VAC Ω
sheets are easy to measure but difficult to compute.

NON-IDEAL BEHAVIORS
CORE LOSSES
90
i (AMPERES)

The magnetic core materials in typical 60 Hz loads

introduce losses at the snubber natural frequency. They
appear as a resistance in series with the load inductance and 0

winding dc resistance (Figure 19). This causes actual dV to ZERO VOLTAGE TRIGGERING, IRMS = 30 A
dt
be less than the theoretical value. 40 80 120 160 200
TIME (MILLISECONDS)
L R

Figure 6.20. Start-Up Surge For Inductive Circuit

Core remanence and saturation cause surge currents.

C
They depend on trigger angle, line impedance, core charac-
L DEPENDS ON CURRENT AMPLITUDE, CORE teristics, and direction of the residual magnetization. For
SATURATION example, a 2.8 kVA 120 V 1:1 transformer with a 1.0
R INCLUDES CORE LOSS, WINDING R. INCREASES ampere load produced 160 ampere currents at start-up. Soft
WITH FREQUENCY starting the circuit at a small conduction angle reduces this
current.
C WINDING CAPACITANCE. DEPENDS ON
INSULATION, WIRE SIZE, GEOMETRY Transformer cores are usually not gapped and saturate
easily. A small asymmetry in the conduction angle causes
Figure 6.19. Inductor Model magnetic saturation and multi-cycle current surges.

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Steps to achieve reliable operation include: resistor. The non-inductive snubber circuit is useful when
1. Supply sufficient trigger current amplitude. TRIACs the load resistance is much larger than the snubber resistor.
have different trigger currents depending on their
quadrant of operation. Marginal gate current or RL
optocoupler LED current causes halfwave operation.
RS
2. Supply sufficient gate current duration to achieve E e
latching. Inductive loads slow down the main terminal
CS
current rise. The gate current must remain above the
specified IGT until the main terminal current exceeds e
E τ = (RL + RS) CS
the latching value. Both a resistive bleeder around the

ǒǓ
load and the snubber discharge current help latching. + E R R)S R

ƪǒ Ǔ ƫ
V step
3. Use a snubber to prevent TRIAC dV failure. S L
TIME
dt c t=0
4. Minimize designed-in trigger asymmetry. Triggering
+ o)) + E ) RL e*tńt ) (1 * e*tńt)
RS
must be correct every half-cycle including the first. Use e (t
RS
a storage scope to investigate circuit behavior during the
first few cycles of turn-on. Alternatively, get the gate RESISTOR CAPACITOR
circuit up and running before energizing the load. COMPONENT COMPONENT
5. Derive the trigger synchronization from the line instead Figure 6.21. Non-Inductive Snubber Circuit
of the TRIAC main terminal voltage. This avoids
regenerative interaction between the core hysteresis Opto-TRIAC Examples
and the triggering angle preventing trigger runaway, Single Snubber, Time Constant Design
halfwave operation, and core saturation.
6. Avoid high surge currents at start-up. Use a current Figure 22 illustrates the use of the RC time constant
probe to determine surge amplitude. Use a soft start design method. The optocoupler sees only the voltage
circuit to reduce inrush current. across the snubber capacitor. The resistor R1 supplies the
trigger current of the power TRIAC. A worst case design
DISTRIBUTED WINDING CAPACITANCE procedure assumes that the voltage across the power
There are small capacitances between the turns and lay- TRIAC changes instantly. The capacitor voltage rises to

ǒǓ
ers of a coil. Lumped together, they model as a single shunt 63% of the maximum in one time constant. Then:
capacitance. The load inductor behaves like a capacitor at
frequencies above its self-resonance. It becomes ineffective
in controlling dV and VPK when a fast transient such as that
dt
R1 CS + t + 0.63
dV ǒǓ
E where

dt s
dV is the rated static dV
dt s dt

resulting from the closing of a switch occurs. This problem for the optocoupler.
can be solved by adding a small snubber across the line.
1 A, 60 Hz
SELF-CAPACITANCE
L = 318 MHY
10 V/µs
A thyristor has self-capacitance which limits dV when the Rin 1 6 180 2.4 k 170 V
dt VCC 2N6073A
load inductance is large. Large load inductances, high power 2 MOC
0.1 µF C1 1 V/µs
factors, and low voltages may allow snubberless operation. 3021 4

φ CNTL
SNUBBER EXAMPLES
WITHOUT INDUCTANCE
0.63 (170)
DESIGN dV
dt
+ (2400)
(0.63) (170)
(0.1 mF)
+ 0.45 Vńms
Power TRIAC Example TIME
240 µs
Figure 21 shows a transient voltage applied to a TRIAC
controlling a resistive load. Theoretically there will be an dV
dt
ń
(V ms)
instantaneous step of voltage across the TRIAC. The only Power TRIAC Optocoupler
elements slowing this rate are the inductance of the wiring 0.99 0.35
and the self-capacitance of the thyristor. There is an expo-
nential capacitor charging component added along with a Figure 6.22. Single Snubber For Sensitive Gate TRIAC
decaying component because of the IR drop in the snubber and Phase Controllable Optocoupler (ρ = 0.67)

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 AN1048/D

The optocoupler conducts current only long enough to However a power TRIAC along with the optocoupler
trigger the power device. When it turns on, the voltage should be used for higher load currents.
between MT2 and the gate drops below the forward thresh-

ǒǓ
old voltage of the opto-TRIAC causing turn-off. The opto- 80

coupler sees dV when the power TRIAC turns off later 70

dt s

LOAD CURRENT (mA RMS)

in the conduction cycle at zero current crossing. Therefore, 60

ǒǓ
CS = 0.01
it is not necessary to design for the lower optocoupler 50
dV rating. In this example, a single snubber designed
dt c 40
for the optocoupler protects both devices. 30 CS = 0.001

20
1 MHY NO SNUBBER
10
100
VCC 0
430 120 V 20 30 40 50 60 70 80 90 100
1 4 1N4001 MCR265–4
MOC3031

400 Hz TA, AMBIENT TEMPERATURE (°C)

2 5
(RS = 100 Ω, VRMS = 220 V, POWER FACTOR = 0.5)
3 6 51 MCR265–4 0.022
µF Figure 6.24. MOC3062 Inductive Load Current versus TA
100 1N4001

(50 V/µs SNUBBER, ρ = 1.0) A phase controllable optocoupler is recommended with a

power device. When the load current is small, a MAC97A
TRIAC is suitable.

ǒǓ
Figure 6.23. Anti-Parallel SCR Driver Unusual circuit conditions sometimes lead to unwanted
operation of an optocoupler in dV mode. Very large cur-
dt c
Optocouplers with SCRs
rents in the power device cause increased voltages between
Anti-parallel SCR circuits result in the same dV across MT2 and the gate that hold the optocoupler on. Use of a
dt
the optocoupler and SCR (Figure 23). Phase controllable larger TRIAC or other measures that limit inrush current
opto-couplers require the SCRs to be snubbed to their lower solve this problem.
dV rating. Anti-parallel SCR circuits are free from the Very short conduction times leave residual charge in the
dt optocoupler. A minimum conduction angle allows recovery
charge storage behaviors that reduce the turn-off capability before voltage reapplication.
of TRIACs. Each SCR conducts for a half-cycle and has the
next half cycle of the ac line in which to recover. The turn- THE SNUBBER WITH INDUCTANCE

off dV of the conducting SCR becomes a static forward Consider an overdamped snubber using a large capacitor
dt whose voltage changes insignificantly during the time

ǒǓ
blocking dV for the other device. Use the SCR data sheet under consideration. The circuit reduces to an equivalent
dt

ǒ * *Ǔ
dV rating in the snubber design. L/R series charging circuit.
dt s The current through the snubber resistor is:

+ RV
A SCR used inside a rectifier bridge to control an ac load t
will not have a half cycle in which to recover. The available i 1 e t ,
t
time decreases with increasing line voltage. This makes the
circuit less attractive. Inductive transients can be sup- and the voltage across the TRIAC is:
pressed by a snubber at the input to the bridge or across the e + i R S.

ǒǓ
SCR. However, the time limitation still applies.
The voltage wave across the TRIAC has an exponential
rise with maximum rate at t = 0. Taking its derivative gives
OPTO dV

ǒ Ǔ+
dt c its value as:
Zero-crossing optocouplers can be used to switch V RS
dV .
inductive loads at currents less than 100 mA (Figure 24). dt 0 L

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 AN1048/D

Highly overdamped snubber circuits are not practical φ = measured phase angle between line V and load I
designs. The example illustrates several properties: RL = measured dc resistance of the load.

Ǹ Ǹ
1. The initial voltage appears completely across the circuit Then
inductance. Thus, it determines the rate of change of
current through the snubber resistor and the initial dV. Z + VI RMS RL
2
) XL2 XL + Z2 * RL2 and
dt RMS
This result does not change when there is resistance in
the load and holds true for all damping factors.
2. The snubber works because the inductor controls the
L + 2 pXfL .
Line
rate of current change through the resistor and the rate If only the load current is known, assume a pure inductance.
of capacitor charging. Snubber design cannot ignore This gives a conservative design. Then:
the inductance. This approach suggests that the snubber
capacitance is not important but that is only true for
this hypothetical condition. The snubber resistor shunts
L + 2 p fVRMSI where E + Ǹ2 V RMS.
Line RMS
the thyristor causing unacceptable leakage when the For example:
+ Ǹ2 + 170 V; L + (8 A) 120 + 39.8 mH.
capacitor is not present. If the power loss is tolerable,
dV can be controlled without the capacitor. An E 120
(377 rps)
dt
example is the soft-start circuit used to limit inrush Read from the graph at ρ = 0.6, VPK = (1.25) 170 = 213 V.
Use 400 V TRIAC. Read dV
+0.6) + 1.0.
current in switching power supplies (Figure 25).
dt (ρ

ǒ Ǔńǒ Ǔ
2. Apply the resonance criterion:

Snubber With No C w0 + spec dV

dt
dV E .
dt (P)

E
RS
w0 +
5 10 6 V S ń + 29.4 10 3 r p s.
RECTIFIER (1) (170 V)
AC LINE SNUBBER C1

ǒǓ+
BRIDGE
+ w 12 L + 0.029 m F
L G
ER S C

Ǹ
dV 0
f

Ǹ+
dt L
3. Apply the damping criterion:
* + 1400 ohms.
RS
E
AC LINE SNUBBER
RECTIFIER
C1
RS + 2ρ L
C
2 (0.6) 39.8
0.029
10 3
*
10 6

ǒǓ
L BRIDGE
G

dV SAFE AREA CURVE

dt c
Figure 6.25. Surge Current Limiting For

ǒǓ
a Switching Power Supply Figure 26 shows a MAC15 TRIAC turn-off safe
operating area curve. Turn-off occurs without problem

ǒǓ
TRIAC DESIGN PROCEDURE dV under the curve. The region is bounded by static dV at low
dt c dt
values of dI and delay time at high currents. Reduction
1. Refer to Figure 18 and select a particular damping
dt c
factor (ρ) giving a suitable trade-off between VPK and dV. of the peak current permits operation at higher line
dt
frequency. This TRIAC operated at f = 400 Hz, TJ = 125°C,
Determine the normalized dV corresponding to the chosen
dt and ITM = 6.0 amperes using a 30 ohm and 0.068 µF

ǒǓ
ǒǓ
damping factor. snubber. Low damping factors extend operation to higher
The voltage E depends on the load phase angle: dI , but capacitor sizes increase. The addition of a small,

+ Ǹ2 f + tan *1
dt c
XL
E VRMS Sin (f) where where saturable commutation inductor extends the allowed
RL
current rate by introducing recovery delay time.

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One hundred µH is a suggested value for starting the

design. Plug the assumed inductance into the equation for
– ITM = 15 A C. Larger values of inductance result in higher snubber

ǒǓ+
100 resistance and reduced dI. For example:
Ǹ + 340 V.
dt
dI 6 f ITM 10 *3 Ańms Given E = 240 2
dt c
Pick ρ = 0.3.
( dVdt )c (V/ µs)

10 Then from Figure 18, VPK = 1.42 (340) = 483 V.

Thus, it will be necessary to use a 600 V device. Using the
previously stated formulas for ω0, C and R we find:
10 VńS
WITH COMMUTATION L
w0 + 50 + 201450
6
1 rps
(0.73) (340 V)

+ (201450)2 (100
1
*6) + 0.2464 m F
Ǹ
C
10

ǒǓ
0.1

10 *6 + 12 ohms
10 14 18 22 26 30 34 38 42 46 50
ń + 2 (0.3) 100
10 *6

ǒ Ǔ
dI AMPERES MILLISECOND
R
dt c 0.2464
+
ń
MAC 16-8, COMMUTATIONAL L 33 TURNS # 18,

ǒ Ǔ ǒǓ
52000-1A TAPE WOUND CORE 3 4 INCH OD
VARIABLE LOADS

Figure 6.26.
dV
versus
dI
T = 125°C
The snubber should be designed for the smallest load
dt c dt c J
inductance because dV will then be highest because of its
dt
dependence on ω0. This requires a higher voltage device for
operation with the largest inductance because of the corre-
STATIC dV DESIGN sponding low damping factor.
dt
Figure 28 describes dV for an 8.0 ampere load at various
There is usually some inductance in the ac main and dt
power wiring. The inductance may be more than 100 µH if power factors. The minimum inductance is a component
there is a transformer in the circuit or nearly zero when a added to prevent static dV firing with a resistive load.
dt
shunt power factor correction capacitor is present. Usually
the line inductance is roughly several µH. The minimum
inductance must be known or defined by adding a series 8 A LOAD
inductor to insure reliable operation (Figure 27).
R L
MAC 218A6FP
68 Ω 120 V
60 Hz
10 0.33 µF 0.033 µF

100 µH
20 A
LS1
t 50 V/µs
ǒ Ǔ+
dV
dt s
100 V ms ń ǒ Ǔ+
dV
dt c
ń
5 V ms

340 R L Vstep VPK dv

12 Ω ρ dt
V
HEATER Ω MHY V V V/µs
0.75 15 0.1 170 191 86
0.03 0 39.8 170 325 4.0
0.04 10.6 28.1 120 225 3.3
0.06 13.5 17.3 74 136 2.6

Figure 6.27. Snubbing For a Resistive Load Figure 6.28. Snubber For a Variable Load

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 AN1048/D

ǒǓ
EXAMPLES OF SNUBBER DESIGNS 1

Table 2 describes snubber RC values for dV .

dt s

ǒǓ
80 A RMS
Figures 31 and 32 show possible R and C values for a 5.0
V/µs dV assuming a pure inductive load. 40 A
dt c
0.1
dV 20 A
Table 2. StaticDesigns
dt

CS ( µ F)
(E = 340 V, Vpeak = 500 V, ρ = 0.3) 10 A
5.0 V/µs 50 V/µs 100 V/µs
5A
L C R C R C R
µH µF Ohm µF Ohm µF Ohm 0.01 2.5 A
47 0.15 10
100 0.33 10 0.1 20
220 0.15 22 0.033 47
500 0.068 51 0.015 110 0.6 A
1000 3.0 11 0.033 100

ǒ Ǔ
0.001
TRANSIENT AND NOISE SUPPRESSION 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
DAMPING FACTOR
Transients arise internally from normal circuit operation
+ 120 VRMS,
ǒǓ
PURE INDUCTIVE LOAD, V
or externally from the environment. The latter is partic-
ularly frustrating because the transient characteristics are
I RRM 0 +
Figure 6.30. Snubber Capacitor For dV = 5.0 V/µs
undefined. A statistical description applies. Greater or dt c
smaller stresses are possible. Long duration high voltage
The natural frequencies and impedances of indoor ac
transients are much less probable than those of lower
wiring result in damped oscillatory surges with typical fre-
amplitude and higher frequency. Environments with infre-
quencies ranging from 30 kHz to 1.5 MHz. Surge ampli-
quent lightning and load switching see transient voltages
tude depends on both the wiring and the source of surge
below 3.0 kV.
energy. Disturbances tend to die out at locations far away
10K
from the source. Spark-over (6.0 kV in indoor ac wiring)
sets the maximum voltage when transient suppressors are
not present. Transients closer to the service entrance or in
0.6 A RMS 2.5 A heavy wiring have higher amplitudes, longer durations, and
more damping because of the lower inductance at those
5A
locations.
1000 The simple CRL snubber is a low pass filter attenuating
10 A
frequencies above its natural resonance. A steady state
20 A sinusoidal input voltage results in a sine wave output at the
R S (OHMS)

same frequency. With no snubber resistor, the rate of roll

40 A off approaches 12 dB per octave. The corner frequency is at
the snubber’s natural resonance. If the damping factor is
80 A low, the response peaks at this frequency. The snubber
100
resistor degrades filter characteristics introducing an
up-turn at ω = 1 / (RC). The roll-off approaches 6.0
dB/octave at frequencies above this. Inductance in the
snubber resistor further reduces the roll-off rate.
Figure 32 describes the frequency response of the circuit

ǒ Ǔ
10 in Figure 27. Figure 31 gives the theoretical response to a
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 3.0 kV 100 kHz ring-wave. The snubber reduces the peak
DAMPING FACTOR voltage across the thyristor. However, the fast rise input
+ 120 VRMS,
ǒǓ
PURE INDUCTIVE LOAD, V
causes a high dV step when series inductance is added to the
I RRM 0 + dt
snubber resistor. Limiting the input voltage with a transient
Figure 6.29. Snubber Resistor For dV = 5.0 V/µs
dt c suppressor reduces the step.

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 AN1048/D

400 In Figure 32, there is a separate suppressor across each

WITHOUT 5 µHY
WITH 5 µHY AND
thyristor. The load impedance limits the surge energy deliv-
VMT (VOLTS)

450 V MOV ered from the line. This allows the use of a smaller device
AT AC INPUT but omits load protection. This arrangement protects each
0
2-1

thyristor when its load is a possible transient source.

WITH 5 µHY

– 400
0 1 2 3 4 5 6
TIME (µs)

Figure 6.31. Theoretical Response of Figure 33 Circuit VMAX

to 3.0 kV IEEE 587 Ring Wave (RSC = 27.5 Ω)

+ 10
Figure 6.33. Limiting Line Voltage
0
VOLTAGE GAIN (dB)

– 10
100 µH
WITH 5 µHY
– 20 5 µH
Vin 10 Vout
– 30 0.33 µF
12 WITHOUT 5µHY

– 40
10K 100K 1M
FREQUENCY (Hz)
V
Figure 6.32. Snubber Frequency Response ǒ VoutǓ
in
Figure 6.34. Limiting Thyristor Voltage

It is desirable to place the suppression device directly

The noise induced into a circuit is proportional to dV across the source of transient energy to prevent the induc-
dt
dI tion of energy into other circuits. However, there is no
when coupling is by stray capacitance, and when the protection for energy injected between the load and its con-
dt
coupling is by mutual inductance. Best suppression trolling thyristor. Placing the suppressor directly across
requires the use of a voltage limiting device along with a each thyristor positively limits maximum voltage and snub-
rate limiting CRL snubber.
ber discharge dI .
The thyristor is best protected by preventing turn-on dt
from dV or breakover. The circuit should be designed for EXAMPLES OF SNUBBER APPLICATIONS
dt
what can happen instead of what normally occurs.
In Figure 30, a MOV connected across the line protects In Figure 35, TRIACs switch a 3 phase motor on and off
many parallel circuit branches and their loads. The MOV and reverse its rotation. Each TRIAC pair functions as a
SPDT switch. The turn-on of one TRIAC applies the differ-
defines the maximum input voltage and dI through the load. ential voltage between line phases across the blocking
dt
With the snubber, it sets the maximum dV and peak voltage device without the benefit of the motor impedance to
dt constrain the rate of voltage rise. The inductors are added to
across the thyristor. The MOV must be large because there
is little surge limiting impedance to prevent its burn-out. prevent static dV firing and a line-to-line short.
dt

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 AN1048/D

SNUBBER

φ1 2 1
22 Ω
100 µH 2W
G
300 WIREWOUND
4 MOC 6 91
3081 0.15
FWD µF

SNUBBER

2 1 SNUBBER
ALL MOV’S ARE 275
G VRMS
300
ALL TRIACS ARE
4 MOC 6 91
MAC218A10FP
3081
1/3 HP
REV
208 V
SNUBBER 91
3 PHASE

SNUBBER
φ2 2 1 G
1
100 µH 6
G
300 MOC
2
91 3081
4 MOC 6
3081 4
FWD
SNUBBER 43

2 1

G
300
6 MOC 4 91
3081
φ3 REV

Figure 6.35. 3 Phase Reversing Motor

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 AN1048/D

Figure 36 shows a split phase capacitor-run motor with less dV capability than similar non-sensitive devices. A
reversing accomplished by switching the capacitor in series dt
with one or the other winding. The forward and reverse non-sensitive thyristor should be used for high dV .
dt
TRIACs function as a SPDT switch. Reversing the motor
TRIAC commutating dV ratings are 5 to 20 times less
applies the voltage on the capacitor abruptly across the dt
blocking thyristor. Again, the inductor L is added to prevent than static dV ratings.
dt
ǒdVǓ firing of the blocking TRIAC. If turn-on occurs, the
dt s
forward and reverse TRIACs short the capacitors (Cs)
SNUBBER INDUCTOR
resulting in damage to them. It is wise to add the resistor RS
to limit the discharge current.
D1
D2
+
C1
120 VAC –
OR D3
D4
REV 240 VAC
91 0.1 RL
46 V/µs 3.75
LS 330 V 240 V
MAX 0 G
+
FWD 500 µH 5.6 120 V
C2
–
91 0.1 MOTOR
1/70 HP RS CS
RS CS
0.26 A
115

2N6073
Figure 6.37. Tap Changer For Dual Voltage
Switching Power Supply

Phase controllable optocouplers have lower dV ratings

Figure 6.36. Split Phase Reversing Motor
Figure 37 shows a “ tap changer.” This circuit allows the
operation of switching power supplies from a 120 or 240
vac line. When the TRIAC is on, the circuit functions as a
conventional voltage doubler with diodes D1 and D2 con-
ducting on alternate half-cycles. In this mode of operation,
inrush current and dI are hazards to TRIAC reliability.
dt
Series impedance is necessary to prevent damage to the
TRIAC.
The TRIAC is off when the circuit is not doubling. In this
state, the TRIAC sees the difference between the line volt-
age and the voltage at the intersection of C1 and C2. Tran-
sients on the line cause ǒdVǓ firing of the TRIAC. High
dt s
dI
inrush current, , and overvoltage damage to the filter
dt
capacitor are possibilities. Prevention requires the addition
of a RC snubber across the TRIAC and an inductor in series
with the line.
THYRISTOR TYPES
Sensitive gate thyristors are easy to turn-on because of
their low trigger current requirements. However, they have
dt
than zero crossing optocouplers and power TRIACs. These
should be used when a dc voltage component is present, or
to prevent turn-on delay.
Zero crossing optocouplers have more dV capability than
dt
power thyristors; and they should be used in place of phase
controllable devices in static switching applications.
APPENDIX A
MEASURING ǒdVǓ
dt s
Figure 38 shows a test circuit for measuring the static dV
dt
of power thyristors. A 1000 volt FET switch insures that the
voltage across the device under test (D.U.T.) rises rapidly
from zero. A differential preamp allows the use of a
N-channel device while keeping the storage scope chassis
at ground for safety purposes. The rate of voltage rise is
adjusted by a variable RC time constant. The charging
resistance is low to avoid waveform distortion because of
the thyristor’s self-capacitance but is large enough to pre-
vent damage to the D.U.T. from turn-on dI. Mounting the
dt
miniature range switches, capacitors, and G-K network
close to the device under test reduces stray inductance and
allows testing at more than 10 kV/µs.

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 AN1048/D

27
VDRM/VRRM SELECT 2W 1000
10 WATT
WIREWOUND
X100 PROBE 2

DIFFERENTIAL DUT 20 k 2W 0.33 1000 V 0.047

PREAMP
X100 PROBE G 1000 V
1

RGK 470 pF
dV
MOUNT DUT ON dt 0.001
100
TEMPERATURE CONTROLLED VERNIER 2W
Cµ PLATE
0.005
1 MEG 2 W EACH
1.2 MEG
82 0.01
2W 2W
POWER
TEST
0.047

1N914 0.1

MTP1N100
20 V 0.47 0–1000 V
10 mA
56
1000 1N967A
f = 10 Hz 2W
1/4 W 18 V
PW = 100 µs
50 Ω PULSE
GENERATOR

ALL COMPONENTS ARE NON-INDUCTIVE UNLESS OTHERWISE SHOWN

Figure 6.38. Circuit For Static dV Measurement of Power Thyristors

dt

APPENDIX B Commercial chokes simplify the construction of the nec-

MEASURING ǒdVǓ
dt c
A test fixture to measure commutating dV is shown in
dt
Figure 39. It is a capacitor discharge circuit with the load
series resonant. The single pulse test aids temperature con-
trol and allows the use of lower power components. The
limited energy in the load capacitor reduces burn and shock
hazards. The conventional load and snubber circuit pro-
vides recovery and damping behaviors like those in the
application.
The voltage across the load capacitor triggers the D.U.T.
It terminates the gate current when the load capacitor volt-
age crosses zero and the TRIAC current is at its peak.
Each VDRM, ITM combination requires different compo-
nents. Calculate their values using the equations given in
Figure 39.
essary inductors. Their inductance should be adjusted by
increasing the air gap in the core. Removal of the magnetic
pole piece reduces inductance by 4 to 6 but extends the cur-
rent without saturation.
The load capacitor consists of a parallel bank of 1500
Vdc non-polar units, with individual bleeders mounted at
each capacitor for safety purposes.
An optional adjustable voltage clamp prevents TRIAC
breakdown.
To measure ǒdVǓ , synchronize the storage scope on the
dt c
current waveform and verify the proper current amplitude
and period. Increase the initial voltage on the capacitor to
compensate for losses within the coil if necessary. Adjust
the snubber until the device fails to turn off after the first
half-cycle. Inspect the rate of voltage rise at the fastest
passing condition.

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 AN1048/D

HG = W AT LOW LD10-1000-1000
NON-INDUCTIVE + CLAMP – CLAMP LL RL
RESISTOR DECADE
0–10 k, 1 Ω STEP TRIAD C30X

2.2 M, 2W

2.2 M, 2W
51 k 50 H, 3500 Ω
2W 910 k

2W Q3 Q1
MR760

2.2 M

2.2 M

C L (NON-POLAR)
51 k 2W

MR760
CAPACITOR DECADE 1–10 µF, 0.01–1 µ F, 100 pF– 0.01 µ F

2.2 M
910 k
RS 2W
2N3904 2N390 + 1.5 kV
62 µF

0-1 kV 20 mA
6 6.2 MEG 2
1 kV
+ W – 70 mA
0.01

0.01

2.2 M

MR760
120 1/2 W
1/2 W 120 – 150 k 6.2 MEG 2
2N390 2N3904 W
6
Q3 Q1
2N3906 2N3904 –5 +5
0.1 0.1 PEARSON
301 X 360 1/2 W 360 1/2 W
2N3904 2N3906
1k 1k
2 CASE
CONTROLLED 2N3904
HEATSINK
1 – +
51 2W 2N3906
CS +5 G
51 2W –5 56
2 WATT Q3 Q1
TRIAC 0.22 0.22
dV UNDER 270 k 1N5343
dt 2.2 k

ǒ Ǔ
TEST 7.5 V 270 k
SYNC 1/2

CL + W0IPKVCi + 2 pp VCi
I T
LL + W0 CiIPK + 4 pT22C
V

L
W0 + ǸLI
L
ǒǓ+dI
dt c
6f I PK 10 6
A ms
*
ń

Figure 6.39. ǒǓ
dV
Test Circuit For Power TRIACs
dt c

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 AN1048/D

APPENDIX C CONSTANTS (depending on the damping factor):

dV DERIVATIONS 2.1 No Damping (ρ + 0)
dt w + w0
RT + a + ρ + 0
DEFINITIONS
+ RL ) RS + Total Resistance Underdamped (0 t ρ t 1)

w + Ǹw0 2 * a2 + w0 Ǹ1 * ρ 2
1.0 RT 2.2

+ RRS + Snubber Divider Ratio Critical Damped (ρ + 1)

Ǹ
1.1 M
T 2.3

a + w0, w + 0, R + 2 L , C + 2
1.2 w0 +
Ǹ1
L CS
+ Undamped Natural Frequency C

u 1)
aR T

w + Damped
w + Ǹa * w0 + w0 Ǹρ2 * 1
Natural Frequency 2.4 Overdamped (ρ
2 2

1.3 a + 2RTL + Wave Decrement Factor Laplace transforms for the current and voltage in Figure 40
are:

+ 11ńń22 CV
LI 2
+ Final
Initial Energy In Inductor
ń) S V0L *c
1.4 χ2
+ E L SI
+ ES *
Ǹ+
2 Energy In Capacitor 3.0 i (S) ; e
S )
2 S
RT
L
1
LC
) S2 ) RLT S) LC1
1.5 χ + EI L Initial Current Factor

+ Ǹ +
C
RL L
1.6 ρ
RT
2
C
L
a
w0
+ Damping Factor
t=0
RS
+ E * RS I + Initial Voltage drop at t + 0
I
1.7 V0 e
L
across the load CS

+ CI – E LRL +
INITIAL CONDITIONS
c

ǒǓ
1.8 I I RRM
S VC
S
+
0
dV + Initial instantaneous dV at t + 0, ignoring
dt 0 dt Figure 6.40. Equivalent Circuit for Load and Snubber
any initial instantaneous voltage step at
t+ 0 because of I RRM The inverse laplace transform for each of the conditions

ǒ Ǔ+
gives:
RT
) c. UNDERDAMPED (Typical Snubber Design)

+ E * V0L ƪCos (wt) * wa ƫ *a )

1.9 dV V OL For all damping conditions
dt 0 L
4.0 e sin (wt) e t

ǒǓ c *at

ƪ ƫ
+ 0, dV + E RS
w sin (wt) e

ǒǓ
2.0 When I
dt 0 L
dV
dt max
+ Maximum instantaneous dV
dt 4.1 de + V0L 2a Cos (wt) ) (w2w–a2) sin (wt) e–at )
t max + Time of maximum instantaneous dV
dt

t peak + Time of maximum instantaneous peak

dt
c ƪ Cos (wt)– a sin (wt) e –at
w
ƫ
voltage across thyristor
ȱȧ ȳȧ
ǒ Ǔ
Average dV + VPKń tPK + Slope of the secant line *1 * )c
2a V0 L
+
from t + 0 through V PK
Ȳ+ ȴ
dt 1
w tan
*w * caw
4.2 t PK
w2 a2
V PK + Maximum instantaneous voltage across the V0
L
thyristor.
When M + 0, RS 0, I + 0 : w t PK + p

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 AN1048/D

4.3 V PK+ E ) wa0 * a tPK w02 V0L2) 2ac V0L) c Ǹ 6.3 V PK + E – ƪ V0L (1–a tPK)–c tPK ƫ e–a tPK
When I + 0, R L + 0, M + 1:
6.4 Average dV
dt
+ VtPK
PK

+ (1 ) e * a tPK) When I + 0, R S + 0, M + 0
V PK
4.4
E
e(t) rises asymptotically to E. t PK and average dV
Average dV +

ƪ ƫ
V PK
dt
dt t PK do not exist.

+ w1 ATN * V0L (w2 * 3a2))

w (2ac 6.5 t max+ a3a2VV0L )) ac
2c

V0 (a 3 * 3aw2) ) c(a 2 * w 2)
4.5 t max
0L
When I + 0, t max + 0

ǒ Ǔ +Ǹ
L

dV 2
)
w0 2 2ac V0 L ) c2 e–a t max
RS
y3ń4,
ǒǓ
4.6 V0 For
dt max L RT

NO DAMPING then dV
dt max
+ dV dt 0
5.0 e + E (1 * Cos (w0t)) ) C Iw0
+ E w0 sin (w0t) )
sin (w0t)
6.6 ǒǓ dV

+ ƪa V0L (2–a tmax) ) c (1–a tmax) ƫe–a tmax

de I Cos (w t) dt max

ǒ Ǔ+
5.1 0
dt C

5.2 dV I + 0 when I + 0
ǒ Ǔ
dt 0 C

p * tan*1 CEI w0
+ APPENDIX D

Ǹ
5.3 t PK
w0 SNUBBER DISCHARGE dI DERIVATIONS
dt
5.4 V PK +E) E2 ) w I22C2 OVERDAMPED

ǒǓ
0
+ wVCLS a–at sinh (wt)

Ǹ
5.5 dV + tPK
V PK 1.0 i
S

ƪ * ǒ Ǔƫ +
dt AVG

5.6 t max + w10 tan 1 w0 EC 1 p when I

w0 2
+0 1.1 i PK + VC S CS
e –a t

ǒǓ
I LS PK

5.7 dV
dt max
+ CI ǸE 2w0 2 C 2 I 2 ) + w0E when I+ 0
1.2 t PK + w1 tanh –1 ƪwaƫ
CRITICAL DAMPING

e + E * V0 (1 * at)e *at ) cte *at

CRITICAL DAMPED
6.0
+ VLCS
+ ƪ a VOL (2 * at) ) c(1 * at) ƫe*at
L
2.0 i te –at
6.1 de S
dt

) 2 Vc0L
2 2.1 i PK + 0.736 VRCS
t PK +
S
6.2
a)
c
V0
L
2.2 t PK + a1

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 AN1048/D

UNDERDAMPED NO DAMPING

Ǹ
+

Ǹ
VC
3.0 i S –at
w LS e sin (wt) 4.0 i + wVCLS sin (wt)
S

3.1 i PK + VC S CS
LS
e –a t
PK 4.1 i PK + VC S CS
LS

3.2 t PK + w1 tan –1 ǒwaǓ 4.2 t PK + 2pw

RS LS

t=0

VCS CS i

+ 0, VCS + INITIAL VOLTAGE

INITIAL CONDITIONS :
i

Figure 6.41. Equivalent Circuit for Snubber Discharge

BIBLIOGRAPHY

Bird, B. M. and K. G. King. An Introduction To Power
Electronics. John Wiley & Sons, 1983, pp. 250–281.
Blicher, Adolph. Thyristor Physics. Springer-Verlag, 1976.
Gempe, Horst. “Applications of Zero Voltage Crossing
Optically Isolated TRIAC Drivers,” AN982, Motorola Inc.,
1987.
“Guide for Surge Withstand Capability (SWC) Tests,”
ANSI 337.90A-1974, IEEE Std 472–1974.
“IEEE Guide for Surge Voltages in Low-Voltage AC Power
Circuits,” ANSI/IEEE C62.41-1980, IEEE Std 587–1980.
Ikeda, Shigeru and Tsuneo Araki. “ The dI Capability of
dt
Thyristors,” Proceedings of the IEEE, Vol. 53, No. 8,
August 1967.
Kervin, Doug. “ The MOC3011 and MOC3021,” EB-101,
Motorola Inc., 1982.
McMurray, William. “Optimum Snubbers For Power
Semiconductors,” IEEE Transactions On Industry Applica-
tions, Vol. IA-8, September/October 1972.
Rice, L. R. “ Why R-C Networks And Which One For Your
Converter,” Westinghouse Tech Tips 5-2.
“Saturable Reactor For Increasing Turn-On Switching
Capability,” SCR Manual Sixth Edition, General Electric,
1979.
Zell, H. P. “Design Chart For Capacitor-Discharge Pulse
Circuits,” EDN Magazine, June 10, 1968.

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AND8005/D
Automatic AC Line Voltage
Selector
Prepared by: Alfredo Ochoa, Alex Lara & Gabriel Gonzalez
Thyristors Applications Engineers
INTRODUCTION
In some cases, appliances and equipment are able to
operate when supplied by two different levels of AC line
voltage to their main terminals (120V or 240V). This is
why, it is very common that appliances and equipment have
mechanical selectors or switches as an option for selecting
the level of voltage needed. Nevertheless, it is also very
common that these types of equipment can suffer extensive
damage caused for not putting the selector in the right
position. To prevent these kind of problems, thyristors can
be used as a solution for making automatic voltage
selectors in order to avoid possibilities of equipment
damage due to over or low voltages AC line supplied to
them. Thyristors can take many forms, but they have
certain things in common. All of them are solid state
switches, which act as open circuits capable of
withstanding the rated voltage until triggered. When they
are triggered, thyristors become low impedance current
paths and remain in that condition (i.e. conduction) until the
current either stops or drops below a minimum value called
the holding level. A useful application of triacs is a direct
replacement for mechanical selectors, relays or switches. In
this application, the triac furnishes on–off control and the
power regulating ability of the triac is not utilized. The
control circuitry for these applications is usually very
simple and these circuits are useful in applications where
simplicity and reliability are important. In addition, as is
 Semiconductor Components Industries, LLC, 1999
November, 1999 – Rev. 0
http://onsemi.com
APPLICATION NOTE
well known, there is no arcing with the triac, which can also
be very important in some applications.
The main disadvantages of the mechanical switches or
selectors appear when they are driving high current levels
that can cause arcing and sparks on their contacts each time
they are activated or de–activated. Because of these kind of
effects the contacts of the switches get very significantly
damaged causing problems in the functionality of the
equipment or appliances.
DEFINITIONS
Control Transformers. This transformer consists of two
or more windings coupled by a common or mutual
magnetic field. One of these windings, the primary, is
connected to an alternating voltage source. An alternating
flux will be produced whose amplitude will depend on the
primary voltage and number of turns. The mutual flux will
link the other winding, the secondary, in which it will
induce a voltage whose value will depend on the number of
secondary turns. When the numbers of primary and
secondary turns are properly proportioned, almost any
desired voltage ratio or ratio of transformation can be
obtained. This transformer is also widely used in low power
electronic and control circuits. There it performs such
functions as matching the source impedance and its load for
maximum power transfer, isolating one circuit from
another, or isolating direct current while maintaining AC
continuity between two circuits.
181 Publication Order Number:
AND8005/D
 AND8005/D

The following schematic diagram shows an automatic load of 10 Amp rms max. Loads can be equipment or any
voltage selector for AC voltage supply of 110V/220V and kind of appliances:

Control Transformer
220 V/24 V – 250 mA 330 W 330 W LM339 10 k W
–
1N4007
110 V
or
m
330 F 1N5349 1N4735
+

220 V?

2.4 k W

820 W – LM339 10 kW
+

Main
Transformer

110 V
TO LOAD
220 V EQUIPMENT

2.4 k W
MOC3022

470 W

1k W
51 W
MAC15A8
470 W 2N2222
10 nF
1k W

2N2222
1.6 k W
MOC3022

51 W
MAC15A8

10 nF

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 AND8005/D
When the main terminals of the equipment are connected
to the AC line voltage, one of the comparators (LM339)
keeps its output at low level and the other one at high level
because of the voltage references connected to their
inverter and non–inverter input pins. Therefore, one of the
transistors (2N2222) is activated allowing current through
the LED of the optocoupler, and which triggers one of the
triacs (MAC15A8) that then provides the right level of AC
line voltage to the main transformer of the equipment by
connecting one of the primary windings through the triac
triggered.
The operational range, in the previous circuit, in the low
AC line voltage condition (110V) is from 100 Vrms to 150
Vrms. This means, the triac that is driving the winding of
the main transformer for 110V would keep itself triggered
whenever the input voltage in the control transformer is
within 100 and 150 Vrms. The operation range in high AC
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183
line voltage condition (220V) is from 180 Vrms to 250
Vrms, therefore, the triac that is driving the winding of the
main transformer for 220V would keep itself triggered
whenever the voltage in the control transformer is within
180 and 250 Vrms. Another very important item to take
into consideration is the operational range of environmental
temperature which is from 0°C to 65°C. If the circuit is
working outside of these temperature limits, it very
probably will experience unreliable functionality.
In conclusion, this automatic voltage selector provides a
very important protection for any kind of voltage sensitive
equipment or appliances against the wrong levels of AC
line input voltages. It eliminates the possibility of any
damage in the circuitry of the equipment caused by
connecting low or high voltage to the main terminals. In
addition, the total price of the electronic circuitry is
inexpensive when compared to the cost of the equipment if
it suffers any damage.
AND8006/D
Electronic Starter for
Flourescent Lamps
Prepared by: Alfredo Ochoa, Alex Lara & Gabriel Gonzalez
Thyristors Applications Engineers
INTRODUCTION
In lighting applications for fluorescent lamps the choice
of the starter switch to be used is always very important for
the designers: the cost, reliability, ruggedness, and ease to
be driven must always be kept in mind. This is especially
important in lighting circuits where the designer has to
optimize the operating life of the fluorescent lamps by
using the right starter switch.
In the large family of electronic switches, the thyristor
must be considered as a low cost and powerful device for
lighting applications. Thyristors can take many forms, but
they have certain features in common. All of them are solid
state switches that act as open circuits capable of
withstanding the rated voltage until triggered. When they
are triggered, thyristors become low impedance current
paths and remain in that condition (i.e. conduction) until the
current either stops or drops below a minimum value called
the holding level. Once a thyristor has been triggered, the
trigger current can be removed without turning off the
device.
Silicon controlled rectifiers (SCRs) and triacs are both
members of the thyristor family. SCRs are unidirectional
devices while triacs are bi–directional. A SCR is designed
to switch load current in one direction, while a triac is
designed to conduct load currents in either direction.
Structurally, all thyristors consist of several alternating
layers of opposite P and N silicon, with the exact structure
varying with the particular kind of device. The load is
applied across the multiple junctions and the trigger current
is injected at one of them. The trigger current allows the
load current to flow through the device setting up a
regenerative action which keeps the current flowing even
after the trigger is removed.
These characteristics make thyristors extremely useful in
control applications. Compared to a mechanical switch, a
thyristor has a very long service life and very fast turn on
and turn off times. Because of their fast reaction times,
regenerative action, and low resistance, once triggered,
thyristors are useful as power controllers and transient over
 Semiconductor Components Industries, LLC, 1999
November, 1999 – Rev. 0
http://onsemi.com
APPLICATION NOTE
voltage protectors, as well as simply turning devices on and
off. Thyristors are used to control motors, incandescent and
fluorescent lamps, and many other kinds of equipment.
Although thyristors of all sorts are generally rugged,
there are several points to keep in mind when designing
circuits using them. One of the most important parameters
to respect is the devices’ rated limits on rate of change of
voltage and current (dV/dt and di/dt). If these are exceeded,
the thyristor may be damaged or destroyed.
DEFINITIONS
Ambient Sound Levels. Background noise generated by
ballast and other equipment operating in a building.
Arc. Intense luminous discharge formed by the passage
of electric current across a space between electrodes.
Ballast. An electrical device used in fluorescent and high
intensity discharge (HID) fixtures. It furnishes the
necessary starting and operating current to the lamp for
proper performance.
Electrode. Metal filament that emits electrons in a
fluorescent lamp.
Fluorescent lamp. Gas filled lamp in which light is
produced by the interaction of an arc with phosphorus
lining the lamp’s glass tube.
Fluorescent light circuit. Path over which electric
current flows to operate fluorescent lamps. Three major
types of fluorescent lighting circuits are in use today,
preheat, instant start (slimline) and rapid start.
Instant start (slimline). A class of fluorescent. Ballast
provides a high starting voltage surge to quickly light the
lamp. All instant start lamps have a single pin base and can
be used only with instant ballast.
Rapid Start Lamps. Fluorescent lamps that glow
immediately when turned on and reach full brightness in
about 2 seconds.
Preheat Lamp. A fluorescent lamp in which the filament
must be heated before the arc is created.
This application note is designed for Preheat Start Lamp
circuit. The description of the functionality of this Lamp is
described below:
184 Publication Order Number:
AND8006/D
 AND8006/D

HOW THE LAMP WORKS (Using the conventional glow–tube starter)

Neon Gas

Fluorescent Starter
Coating

Coated (Argon Gas)

Filament
Mercury Droplets

VAC
Ballast
Inductor

The above Figure illustrates a fluorescent lamp with the
conventional glow–tube starter. The glow–tube starter
consists of a bimetallic switch placed in series with the tube
filament which closes to energize the filaments and then
opens to interrupt the current flowing through the ballast
inductor, thereby, generating the high voltage pulse
necessary for starting. The mechanical glow–tube starter is
the circuit component most likely to cause unreliable
starting.
The principle disadvantage of the conventional
glow–tube starter is that it has to open several times in the
filament circuit to interrupt the current flowing through the
Fluorescent Lamp of 20 Watts
ballast inductor in order to generate the high voltage
necessary for turning–on the fluorescent lamp. However,
those interactions decrease the life of the lamp
considerably. Besides, the lamp turns–on in around 3
seconds when it is using the conventional glow–tube starter
and it also causes degradation to the lamp.
On the other hand, the following schematic diagrams
show the electronic circuitry which substitutes the
conventional glow–tube starter for fluorescent lamps
applications of 20 Watts and 40 Watts using a diode, SCR,
and a TVS or zener clipper(s):

Switch Clipper
SA90A
A
Coated MCR100–8
Line (120 V; 60 Hz) Filaments
K Gate

Fluorescent Diode 1N4003

Lamp 20 W

Ballast Electronic Starter

Inductor

Fluorescent Lamp of 40 Watts

White Ballast Blue
Switch Inductor Clipper
Black 30 W SA170A
Phase Clipper
Coated SA30A
Line (120 V; 60 Hz) Filaments m
0.1 F A
MCR100–8
Neutral K Gate

Fluorescent Diode 1N4003

Lamp 40 W

Electronic Starter

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 AND8006/D
The main reason why the previous circuits are different is
due to the high voltage must be generated for each kind of
lamp. This means, the inductor ballast for fluorescent
lamps of 40 Watts provides higher voltage than the inductor
ballast for lamps of 20 Watts, that is why, the electronic
circuits have to be different. As an observation, even the
conventional glow–tube starters have to be selected
Fluorescent Lamp of 20 Watts:
Vp=160V
Ip=1.2Amp
When the switch is turned–on, the voltage across the
Clipper (SA90A) is the same as the voltage of the AC Line
(Vpeak=160V), and since the Clipper allows current–flow
through itself only once its VBR is reached (100V peak),
the SCR (MCR100–8) turns–on and closes the circuit to
energize the filaments of the fluorescent lamp. At this time,
the current across the circuit is around 1.2A peak, and once
the lamp has got enough heat, it decreases its dynamic
resistance and permits current–flow through itself which
causes the voltage across the Clipper to decrease to around
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according the power of the lamp, it means, there is not a
general glow–tube starter who can operate for all kinds of
fluorescent lamps.
The following plots show the voltage and current
waveform in the electronic starter circuitry when the
fluorescent lamps is turned–on:
Time before the
Vp=78V Lamp turns–on
Ch1 Voltage
Ch2 Current
78 Vpeak. This effect makes the clipper turn off, since the
voltage is less than the VBR of the device (SA90A), and
because the clipper turns off, the SCR also turns–off, and
opens the circuit to interrupt the current flowing through
the ballast inductor, thereby, generating the high voltage
pulse necessary for starting the lamp. The time that the
fluorescent lamp will take before to turn–on is around
400 msecs by using the electronic starter. It is a faster
starter then when the lamp is using the conventional
glow–tube starter.
 AND8006/D
Fluorescent Lamp of 40 Watts:
Vp=230V
Ip=2.1Amp
The operation of the electronic starter circuit of 40 watts
is similar than for 20 watts, the only difference between
them is that the Inductor Ballast of 40 watts generates
higher voltage than the inductor ballast of 20 watts. That is
why the schematic circuit for lamps of 40 watts has two
clippers and one snubber inside its control circuit. Besides,
the current flowing through this circuit is around 2.1A peak
and it appears around 550 msecs (which is the time that the
lamp takes before it turn itself on), longer than in the
electronic starter circuit of 20 watts.
In conclusion the electronic starter circuits (for 20 and 40
watts) are more reliable than the conventional glow–tube
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Time before the
Vp=140V Lamp turns–on
Ch1 Voltage
Ch2 Current
starters since the lamps turn–on faster and more efficiently
increasing their life–time considerably. Besides, the total
price of the electronic devices is comparable with the
current starters (glow–tube).
In summary, it is also important to mention that the range
of the AC voltage supply to the electronic starter circuits
must be from 115Vrms to 130Vrms for operating correctly.
If it is not within this voltage range the circuits may not be
able to operate in the correct way causing unreliable start-
ing of the lamp. Also, extreme environmental temperatures
could effect the right functionality of the electronic starters
but it is a fact that they can operate between 15°C to 40°C.
AND8007/D
Momentary Solid State
Switch for Split Phase
Motors
Prepared by: Alfredo Ochoa, Alex Lara & Gabriel Gonzalez
Thyristors Applications Engineers
INTRODUCTION
In control applications for motors the choice of the solid
state switch to be used is always very important for the
designers: the cost, reliability, ruggedness, and ease to be
driven must always be kept in mind. This is especially
important in motor control circuits where the designer has
to optimize the circuitry for controlling the motors in the
correct and efficient way.
In the large family of electronic switches, the thyristor
must be considered as a low cost and powerful device for
motor applications. Thyristors can take many forms, but
they have certain features in common. All of them are solid
state switches which act as open circuits capable of
withstanding the rated voltage until triggered. When they
are triggered, thyristors become low impedance current
paths and remain in that condition (i.e. conduction) until the
current either stops or drops below a minimum value called
the holding level. Once a thyristor has been triggered, the
trigger current can be removed without turning off the
device.
Because Thyristors are reliable solid state switches, they
have many applications, especially as controls. A useful
application of triac is as a direct replacement for an AC
mechanical relay. In this application, the triac furnishes
on–off control and the power regulating ability of the triac
is utilized. The control circuitry for this application is
usually very simple, consisting of a source for the gate
signal and some type of small current switch, either
mechanical or electrical. The gate signal can be obtained
from a separate source or directly from the line voltage at
terminal MT2 of the triac.
One of the most common uses for thyristors is to control
AC loads such as electric motors. This can be done either
by controlling the part of each AC cycle when the circuit
conducts current (Phase control) or by controlling the
 Semiconductor Components Industries, LLC, 1999
November, 1999 – Rev. 0
http://onsemi.com
APPLICATION NOTE
number or cycles per time period when current is conducted
(cycle control). In addition, thyristors can serve as the basis
of relaxation oscillators for timers and other applications.
DEFINITIONS
Split–Phase Motor. Split–Phase motors have two stator
windings, a main winding and an auxiliary winding, with
their axes displaced 90 electrical degrees in space. The
auxiliary winding has a higher resistance–to–reactance
ratio than the main winding, so that the two currents are out
of phase. The stator field thus first reaches a maximum
about the axis of one winding and then somewhat later in
time (about 80 to 85 electrical degrees) reaches a maximum
about the axis of the winding 90 electrical degrees away in
space. The result is a rotating stator field which causes the
motor to start. At about 75 percent of synchronous speed,
the auxiliary winding is cut out by a centrifugal switch.
The below figure shows an schematic representation of a
split–phase motor:
Main Centrifugal
Line
Winding Switch
Auxiliary
Winding
When the line voltage is applied, the current flows
through both windings and the result is a rotating stator
field which causes the motor to start. At about 75 percent of
synchronous speed, the auxiliary winding is cut out by a
centrifugal switch.
188 Publication Order Number:
AND8007/D
 AND8007/D

The following figure shows a conventional schematic In the previous figure the thermostat–switch is
diagram using a relay for controlling a split–phase controlling the working–cycle of the compressor and it is
fractional horsepower motor (the compressor of a dependent on the set point of environment temperature
refrigerator for example): which has to be selected according to the temperature
Bi–metal Switch
needed. The bi–metal switch protects the compressor
against overload and the relay controls the momentary
Line
switch which cuts out the starter winding once the motor
Thermostat has reached about 75 percent of the synchronous speed
Switch Start Main (after around 300 msecs).
Winding Winding The below plot shows the current flowing through the
compressor (1 Phase, 115Vac, 60Hz, 4.1Arms) when it
IS IO starts to operate under normal conditions:

Momentary
Switch

Neutral

This plot shows the total current flowing through the is cut out by the momentary switch and then the current
compressor when it starts to operate and the time in which decreases to reach the nominal current of the compressor
the current reaches the maximum value (Is) due to the start (Io=4.1 Arms).
of the motor. After this time (210 msecs) the start winding

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 AND8007/D

The following schematic diagrams show the way triacs can substitute for the relay and how they can be triggered by using
different control options:

Bi–metal Switch
Line

Thermostat
Switch Start Normal Op.
Winding Winding

“Momentary MT2
Solid State Main Winding
Switch” MAC8D, M Solid Connected
Gate to Neutral
MT1

Neutral
0

–lg
Non–sensitive Gate TRIAC
Negative Triggering
for Quadrants 2 and 3 –VCC

Logic MT2
Signal
Gate
MT1

Neutral

Bi–metal Switch
Line

Direct Negative
MT2
Logic Driven
RS
by Microcontroller
MAC8SD, M
Gate
mC CS
HC MT1

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 AND8007/D

In the first diagram, the triac (MAC8D,M) is making the
function of the conventional relay’s momentary switch, and
it can be triggered by using a transistor as shown in the above
schematic or through the signals of a microcontroller. Since
this triac (MAC8D,M) is a snubber–less device, it does not
need a snubber network for protecting itself against dV/dt
phenomena.
In the second diagram the triac (MAC8SD,M) is also
performing the function of the relay’s momentary switch,
but since this device is a sensitive gate triac, it only needs a
very low Igt current for triggering itself, therefore, this
option is especially useful in applications where the level of
the current signals are small.
On the other hand, the following figure shows a practical
solid state solution for controlling the compressor with the
operating characteristics mentioned previously (1 Phase,
115Vac, 60Hz, 4.1 Arms) :

120 V/14 V

280 W 10 k W
1000 mF +
Neutral – 1N4003 W
10 k
+
1.3 k W LM741C

1000 mF
10 Fm –

100 W

510 W

2N6520

10 k W

Bi–metal Switch
Line

Thermostat
Switch Start Normal Op.
Winding Winding

Neutral

MT2
Main Winding
MAC8D, M Solid Connected
to Neutral
MT1

Neutral

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 AND8007/D
When the thermostat switch is activated, the triac
(MAC8D,M) turns–on and allows current flow through the
starter winding. This current is around 20 Arms because at
the start of the motor (see current plot shown previously),
after around 210msec, the triac turns–off and blocks the
current flowing through the starter winding. In that
moment, the total current flowing through the motor
decreases until it reaches the nominal current (4.1 Arms)
and the motor continues operating until the thermostat
switch is switched off.
Since the triac operates for very short times (around 210
msec), it does not need a heat sink, therefore, it can be
placed on the control board without any kind of problems.
In the previous schematic diagram the triac of 8 Arms
(MAC8D,M), was selected based on the nominal and start
current conditions of the compressor previously described
(1 Phase, 115Vac, 60Hz, 4.1Arms). Therefore, it is
important to mention that in these kind of applications, the
triacs must be selected taking into consideration the
characteristics of each kind of motor to control (nominal
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and start currents, frequency, Vac, power, etc). Also, it is
important to remember that it is not possible to have a
general reference for selecting the right triacs for each
motor control application.
In conclusion, the solid state solution described
previously, provides a more reliable control than the
conventional momentary switch controlled by a relay since
the thyristors do not cause any kind of sparks when they
start to operate. In addition, the total price of the electronic
components do not exceed the price of the conventional
relay approach.
In summary, it is also important to mention that extreme
environmental temperatures could affect the functionality
of this momentary solid state switch, but it is a fact that the
triac solution is able to operate between 0°C to 65°C.
Another important consideration is to include in the
power circuit of the motor the right overload switch in
order to protect the motor and the triacs against overload
phenomena.
AND8008/D
Solid State Control
Solutions for Three Phase
1 HP Motor
Prepared by: Alfredo Ochoa, Alex Lara & Gabriel Gonzalez
Thyristors Applications Engineers
INTRODUCTION
In all kinds of manufacturing, it is very common to have
equipment that has three phase motors for doing different
work functions on the production lines. These motor
functions can be extruders, fans, transport belts, mixers,
pumps, air compressors, etc. Therefore, it is necessary to
have equipment for controlling the start and stop of the
motors and in some cases for reversing them. Actually, one
of the most common solutions for performing this control
functions is by using three phase magnetic starters. It
consists of a block with three main mechanical contacts
which provide the power to the three main terminals of the
motor once its coil is energized. However, the magnetic
starter has a lot of disadvantages and the most common
appear when they are driving high current levels that can
cause arcing and sparks on their contacts each time they are
activated or de–activated. Because of these kind of effects
the contacts of the magnetic starters get very significantly
damaged causing problems in their functionality. With time
it can cause bad and inefficient operation of the motors. This
is why, thyristor should be considered as a low cost
alternative and indeed a powerful device for motor control
applications. Thyristors can take many forms but they have
certain features in common. All of them are solid state
switches that act as open circuits capable of withstanding the
rated voltage until triggered. When they are triggered,
thyristors become low impedance current paths and remain
in that condition (i.e. conduction) until the current either
stops or drops below a minimum value called the holding
level. Once a thyristor has been triggered, the trigger current
can be removed without turning off the device.
 Semiconductor Components Industries, LLC, 1999
November, 1999 – Rev. 0
http://onsemi.com
APPLICATION NOTE
DEFINITIONS
Three phase induction motor.
A three phase induction motor consists of a stator
winding and a rotor of one of the two following types: one
type is a squirrel–cage rotor with a winding consisting of
conducting bars embedded in slots in the rotor iron and
short circuited at each end by conducting end rings. The
other type is a wound rotor with a winding similar to and
having the same number of poles as the stator winding, with
the terminals of the winding being connected to the slip
rings or collector rings on the left end of the shaft. Carbon
brushes bearing on these rings make the rotor terminals
available at points external to the motor so that additional
resistance can be inserted in the rotor circuit if desired.
Three phase voltages of stator frequency are induced in
the rotor, and the accompanying currents are determined by
the voltage magnitude and rotor impedance. Because they
are induced by the rotating stator field, these rotor currents
inherently produce a rotor field with the same number of
poles as the stator and rotating at the same speed with
respect to the stationary rotor. Rotor and stator fields are
thus stationary with respect to each other in space, and a
starting torque is produced. If this torque is sufficient to
overcome the opposition to rotation created by the shaft
load the motor will come up to its operating speed. The
operating speed can never equal the synchronous speed of
the stator field.
The following figure shows a three phase 1HP motor
controlled through a conventional magnetic starter which
has an over–load relay for protecting the motor against
over–load phenomena.
193 Publication Order Number:
AND8008/D
 AND8008/D

Power Schematic
220 Vrms 60 Hz
L1 L2 L3

Start Stop

A A A A

NC OL OL OL

3 Phase
Motor
1 H.P.

When the start button is pushed on, the coil of the
magnetic starter (A) is energized, thereby, the mechanical
switch contacts close allowing current–flow through the
motor which starts it to operate. If the stop button is pushed,
the coil (A) will be de–energized causing the motor to stop
because of the mechanical switch contacts opened. In
addition, if an overload phenomena exists in the circuit of
the motor, the switch contact (NC) of the overload relay
will open de–energizing the coil and protecting the motor
against any kind of damage.
Magnetic starters have a lot of disadvantages like arcing,
corrosion of the switch contacts, sparks, noisy operation,
short life span, etc. Therefore, in some motor applications,
it is not useful to control the motors by using magnetic
starters since the results can be undesirable.
On the other hand, the following schematic diagrams
show how thyristors can perform the same control function
for starting and stopping a three phase 1HP motor. In addi-
tion, the diagrams below show an over load circuit for pro-
tecting the motor against overload phenomena.

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 AND8008/D

Line Voltage Diagram 1

220 Vrms 60 Hz
L1 L2 L3

510 W 510 W 510 W

MAC8N MAC8N MAC8N

MOC3062 MOC3062 MOC3062

To Over Load To Over Load

Current Current
Protection Circuit Protection Circuit
Transformer Transformer
for Line 1 for Line 3

3 Phase
Motor
1 H.P.

Diagram 1 shows how three triacs (MAC8M) substitute
the mechanical contacts of the conventional magnetic
starter (shown previously) for supplying the power to the
three phase 1HP motor once the triacs are triggered.
It is important to mention that the optocoupler devices
(MOC3061) will supply the signal currents to the triacs and
hence the motor keeping the same phase shifting (120
electrical degrees) between lines. This is because these
optocuplers (MOC3061) have zero crossing circuits within
them.
Another important thing must be considered as a
protection for the triacs (MAC8M) against fast voltage
transients, is a RC network called snubber which consists of
a series resistor and capacitor placed around the triacs.
These components along with the load inductance from a
series CRL circuit.
Many RC combinations are capable of providing
acceptable performance. However, improperly used
snubbers can cause unreliable circuit operation and damage
to the semiconductor device. Snubber design involves
compromises. They include cost, voltage rate, peak
voltage, and turn–on stress. Practical solutions depend on
the device and circuit physics.
Diagram 2 shows an electronic over–load circuit which
provides very reliable protection to the motor against over
load conditions. The control signals for the two electronic
over–load circuits are received from the shunt resistors
connected in parallel to the two current transformers placed
in two of the three main lines (L1, L3) for sensing the
current flowing through the motor when it is operating. The
level of the voltage signals appearing in the shunt resistors
is dependent on the current flowing through each main line
of the motor. Therefore, if it occurs, that an over load
condition in the power circuit of the motor, that voltage
level will increase its value causing the activation of the
electronic over–load circuits which will stop the motor by
protecting it against the over–load condition experienced.

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 AND8008/D

Over Load Protection Circuit for Line 1 Diagram 2

10 kW 2k W
Wire Conductor 220 Fm
Line 1
+12 Vdc
1k W +12 Vdc
+12 Vdc
0.1W – MUR160 1k W LM324
Shunt –
+ LM324
1k W LM324
10 k W +
+

+12 Vdc –
MUR160
10 kW –12 Vdc
–12 Vdc
25 kW –12 Vdc

+12 Vdc
22 k W
Output Signal Connected
MUR160 to OR Gate’s Input One 1k W
+
+12 Vdc
m
220 F –
LM324
2k 1k W
–12 Vdc

4.3 k W

Over Load Protection Circuit for Line 3

10 kW 2k W
Wire Conductor 220 Fm
Line 3
+12 Vdc
1k W +12 Vdc
+12 Vdc
0.1W –
MUR160 1k W LM324
Shunt –
+ LM324
1k W LM324
10 k W +
+

+12 Vdc –
MUR160
10 kW –12 Vdc
–12 Vdc
25 kW –12 Vdc

+12 Vdc
22 k W
Output Signal Connected
MUR160 to OR Gate’s Input Two 1k W
+
+12 Vdc
m
220 F –
LM324
2k 1k W
–12 Vdc

4.3 k W

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 AND8008/D

Start/Stop Control Circuit Diagram 3

Output Signal from
Over Load Protection MC14075
Line 1

Output Signal from

Over Load Protection Stop +12 Vdc
Line 3 Button +12 Vdc

510 W
1k W CD

MC14013
1.5 k W
MOC3062
Q
+12 Vdc Start 2N2222
Button SD
MOC3062

1k W MOC3062

Diagram 3 shows the main electronic control circuit for
controlling the start and stop of the motor each time it is
needed. If the start button is pushed on, the Flip Flop
(MC14013) is activated triggering the transistor (2N2222)
which turns on the optocoupler’s LED’s which in turn the
three triacs (MAC8M) get triggered and finally starts the
motor. The motor will stop to operate, whenever the stop
button is pushed or any overload condition occurs in the
power circuit of the motor.
The following plot shows the motor’s start current
waveform on one of the three phases when the motor starts
to operate under normal operation conditions and without
driving any kind of mechanical load:

Ipk = 28.8 Amp

start current

Ipk = 2.8 Amp

Normal operation

128 msec

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 AND8008/D

This other plot shows the motor’s start current waveform

of the three phases when the motor start to operate under
normal operation conditions and without mechanical load.

Phase R start
current Waveform

Phase S start
current Waveform

Phase T start
current Waveform

The previous plots show the maximum start current IPK
of the motor when it starts to operate and how long it takes
before the current reaches its nominal value. Here, It is
important to mention that the triacs (MAC8N) were
selected by taking into consideration the motor’s start
current value as well as the ITSM capability of these
devices. Therefore, if it is needed to control motors with
higher power (more than 1HP), first, it would be necessary
to characterize them in order to know their current
characteristics. Next be able to select the right triacs for
controling the motor without any kind of problems.
Another important item must be considered if it is needed
to control motors with higher power. These are the
electronic over–load circuits, which have to be adjusted
taking into consideration the level of overload current that
is needed to protect, and is dependent on the kind of motor
that is being controlled.
Based in the previous diagrams and plots, it has been
proven that triacs can substitute the function of the
magnetic starters for starting and stopping a three phase
1HP motor as well as for protecting it against overload
conditions.
The following schematics show a solid state solution for
controlling and reversing a three phase 1HP motor:

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 AND8008/D

Reverse Control Schematic Schematic 1

+12 Vdc +12 Vdc
Right Left

S S

MC14013

MC14013
1k W 1k W
+12 Vdc
Stop Q Q
From Over Load R R
Protection Circuit MC14075 MC14075

1k W

MC14075

+12 Vdc
+12 Vdc
10 k W +12 Vdc

10 k W
– LM339 510 W
+12 Vdc
m
220 F
+ 1.5 k W
2k
Right
2N2222

4.3 k W MOC3062
3

+12 Vdc
MOC3062
+12 Vdc 2
10 k W
+12 Vdc
510 W
10 k W
– LM339 MUR160
+12 Vdc Left
m
220 F
+ 1.5 k W MOC3062
2N2222 1
2k MOC3062
4

MOC3062
4.3 k W 5 MUR160

Schematic 1 shows the control diagram for controlling
and reversing the motor depending on which direction it is
needed to operate. If the right–button is pushed–on, the
triacs number 1, 2, and 3 (shown in the schematic 2) will be
activated, thereby, the motor will operate in the right
direction. If the left button is pushed–on, the triacs
numbered 1, 4, and 5 will be activated causing the left
operation of the motor. Because of the design of the control
circuit, it is possible to reverse the motor without stopping
it once it is operating in right direction. This means, it is not
necessary to stop the motor in order to reverse itself.
Nevertheless, it is important to mention that the control
circuit takes a delay–time (of around 3 seconds) before it
activates the other triacs (1,4,5) for reversing the motor.
This delay is to assure that the triacs operating (1,2,3) will
be completely in the off state before it turns–on those other
triacs. This delay–time is very important because if the
triacs for reversing the motor are activated before the other
triacs triggered have reached their completely turned–off
state, it may cause a big short circuit between phases. If this
happens the triacs will be damaged.

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 AND8008/D

Power Schematic Schematic 2

220 Vrms 60 Hz
L1 L2 L3

510 W 51 W 510 W 51 W 510 W 51 W 510 W 51 W 510 W 51 W

MAC8N

MAC8N

MAC8N

MAC8N

MAC8N
MOC3062 MOC3062 MOC3062 MOC3062 MOC3062
1 2 3 4 5
10 nF 10 nF 10 nF 10 nF 10 nF

To Over Load To Over Load

Circuit 1 Circuit 2

3 Phase
Motor
1 H.P.

Schematic 2 shows the power diagram for reversing a
three phase 1HP motor. The way it makes this reverse
function control is by changing the phases–order supplied
to the motor through the triacs (number 4 and 5) and it is
based in the motorís principle for reversing itself. This
diagram also shows two current transformer placed in two
of the three main lines of the motor for sending the control
signals to the electronic overload circuit described
previously. So this means, that the same overload concept
is applicable to these schematics as well as the motor’s start
current waveforms and characteristics shown and
explained previously.
In conclusion, it is proven that thyristors can substitute to
the magnetic starters for making three phase motor control
function in more efficient ways. Because thyristors are
very reliable power switches, they can offer many
advantages in motor applications. Some of the advantages
of triacs as replacements for relays include:
• High Commutating di/dt and High Immunity to dv/dt
@ 125°C
• Small size and light weight.
• Safety – freedom form arcing and spark initiated
explosions.
• Long life span – contact bounce and burning
eliminated.
• Fast operation – turn–on in microseconds and turn–off
in milliseconds.
• Quiet operation.
The above mentioned points are only some of the big
advantages that can be had if thyristors are used for making
motor control function. Besides, the total cost of the
previous control and power circuits does not exceed to the
cost of the conventional magnetic starters.
One more consideration is that extreme environmental
temperatures could effect the functionality of the electronic
control circuits described herein. Therefore, if the
operation is needed under extreme ambient temperatures,
the designer must evaluate the parameter variation of all the
electronic devices in order to assure the right operation in
the application circuit.

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AND8015/D
Long Life Incandescent
Lamps using SIDACs
Prepared by: Alfredo Ochoa, Alex Lara & Gabriel Gonzalez
Thyristor Application Engineers
Abstract
Since the invention of the incandescent lamp bulb by the
genius Thomas A. Edison in 1878, there has been little
changes in the concept. Nowadays we are currently use
them in our houses, and they are part of our comfort but,
since we are more environmentally conscious and more
demanding on energy cost saving products, along with their
durability, we present here an application concept involved
this simple incandescent lamp bulb in conjunction with the
Bilateral Trigger semiconductor device called SIDAC,
offering an alternative way to save money in energy con-
sumption and also giving a longer life time to the lamp
bulbs.
Theory of the SIDAC
The SIDAC is a high voltage bilateral trigger device that
extends the trigger capabilities to significantly higher volt-
ages and currents than have been previously obtainable,
thus permitting new, cost effective applications. Being a
bilateral device, it will switch from a blocking state to a
ITM
IH
Once the input voltage exceeds V(BO), the device will
switch on to the forward on–voltage VTM of typically 1.1
V and can conduct as much as the specified repetitive peak
on state current ITSM of 20A (10µs pulse, 1KHz repetition
frequency).
 Semiconductor Components Industries, LLC, 1999
January, 2000 – Rev. 0
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APPLICATION NOTE
conducting state when the applied voltage of either polarity
exceeds the breakover voltage. As in other trigger devices,
the SIDAC switches through a negative resistance region to
the low voltage on–state and will remain on until the main
terminal current is interrupted or drops below the holding
current.
SIDAC’s are available in the large MKP3V series and the
economical, easy to insert, small MKP1V series axial lead
packages. Breakdown voltages ranging from 110 to 250V
are available. The MKP3V devices feature bigger chips and
provide much greater surge capability along with some-
what higher RMS current ratings.
The high voltage and current ratings of SIDACs make
them ideal for high energy applications where other trigger
devices are unable to function alone without the aid of addi-
tional power boosting components.
The following figure shows the idealized SIDAC
characteristics:
VTM
Slope = Rs
IS
IDRM VS
I(BO)
V(BO)
VDRM
Rs = (V(BO) – VS)
(IS – I(BO))
SIDACs can be used in many applications as transient
protectors, Over Voltage Protectors, Xeon flasher, relax-
ation oscillators, sodium vapor lamp starters, etc.
201 Publication Order Number:
AND8015/D
 AND8015/D
This paper explains one of the most typical applications
for SIDACs which is a long life circuit for incandescent
lamps.
The below schematic diagrams show the configurations
Option 1: ac line voltage 110V, 60Hz or 50Hz
SIDAC
MKP1V120RL
AC Line
110V, 60 Hz
Option 2: ac line voltage 220V, 60Hz or 50 Hz
SIDAC
MKP1V120RL
AC Line
220V, 60 Hz
This is done in order to lower the RMS voltage to the fila-
ment, and prolong the life of the bulb. This is particularly
useful when lamps are used in hard to reach locations such
as outdoor lighting in signs where replacement costs are
high. Bulb life span can be extended by 1.5 to 5 times
depending on the type of lamp, the amount of power reduc-
tion to the filament, and the number of times the lamp is
switched on from a cold filament condition.
The operating cost of the lamp is also reduced because of
the lower power to the lamp; however, a higher wattage
bulb is required for the same lumen output. The maximum
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of a SIDAC used in series with an incandescent lamp bulb
through a fixed phase for the most typical levels of ac line
voltages:
100 WATTS
110V
100 WATTS
220V
possible energy reduction is 50% if the lamp wattage is not
increased. The minimum conduction angle is 90° because
the SIDAC must switch on before the peak of the line volt-
age. Line regulation and breakover voltage tolerances will
require that a conduction angle longer than 90° be used, in
order to prevent lamp turn–off under low line voltage
conditions. Consequently, practical conduction angles will
run between 110° and 130° with corresponding power
reductions of 10% to 30%.
The following plots show the basic voltage and current
waveforms in the SIDAC and load:
 AND8015/D
Incandescent Lamp of 100W, 110V, 60Hz
V(BO)
–V(BO)
Conduction
Angle
Incandescent Lamp of 50W, 220V, 60Hz
V(BO)
–V(BO)
Conduction
Angle
In both previous cases, once the ac line voltage reaches
the V(BO) of the SIDAC (MKP1V120RL), it allows cur-
rent flow to the incandescent lamp causing the turn–on of
this at some specific phase–angle which is determined by
the SIDAC because of its V(BO).
The fast turn–on time of the SIDAC will result in the gen-
eration of RFI which may be noticeable on AM radios oper-
ated in the vicinity of the lamp. This can be prevented by
the use of an RFI filter. A possible filter can be the follow-
ing: connect an inductor (100µH) in series with the SIDAC
and a capacitor (0.1µF) in parallel with the SIDAC and
inductor. This filter causes a ring wave of current through
the SIDAC at turn on time. The filter inductor must be
selected for resonance at a frequency above the upper fre-
quency limit of human hearing and as low below the start of
the AM broadcast band as possible for maximum harmonic
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Ch1 Voltage
Vpk = 123V
Ch2 Current
Ipk = 0.96A
Ch1 Voltage
Vpk = 121V
Ch2 Current
Ipk = 0.33A
attenuation. In addition, it is important that the filter induc-
tor be non–saturating to prevent di/dt damage to the
SIDAC.
The sizing of the SIDAC must take into account the RMS
current of the lamp, thermal properties of the SIDAC, and
the cold start surge current of the lamp which is often 10 to
20 times the steady state load current. When lamps burn
out, at the end of their operating life, very high surge cur-
rents which could damage the SIDAC are possible because
of arcing within the bulb. The large MKP3V device is rec-
ommended if the SIDAC is not to be replaced along with
the bulb.
In order to establish what will be the average power that
an incandescent lamp is going to offer if a SIDAC
(MKP1V120RL) is connected in series within the circuit,
some ideal calculations could be made for these purposes
 AND8015/D

Example: Incandescent lamp of 100W (120V, 60Hz).

200
v(t):
i(t) x 100:
100 VL(t):
Voltage / Current

0 v(t): Voltage waveform in the SIDAC

l(t): Portion of current waveform applied to the load
(Multiplied by a factor of 100 to make it more graphically
visible)
–100
VL(t): Voltage waveform in the Load

–200
0 0.002 0.004 0.006 0.008
time in seconds

Ǹŕ
In this case, the conduction angle is around 130°
(6 msecs) in each half cycle of the sinusoidal current wave-
form, therefore, the average power of the lamp can be
obtained by calculating the following operations:
*3
Based on this, it is possible to observe that the average
power output is a little bit lower than the original power of
the lamp (100W), even though the conduction angle is
being reduced because of the SIDAC.
In conclusion, when a SIDAC is used to phase control an

Ǹŕ
8.33 10

i
eff
+ 2
T
2
i(t) dt
incandescent lamp, the operation life of the bulb is going to
be extended by 1.5 to 5 times which represents a big eco-
0 nomical advantage when compared to the total cost of the
lamp if it is changed. In addition, the original power of the
8.33 10 *3 lamp is not going to be reduced considerably which assures
v
eff
+ 2
T
v(t) dt
2
the proper level of illumination for the area in which the
0
incandescent lamp is being used for. Finally, since the
SIDACs are provided in a very small axial lead package,
Pav = ieffVLeff they can be mounted within the same place that the incan-
Pav = 91.357 descent lamp is placed.

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AND8017/D
Solid State Control for
Bi-Directional Motors
Prepared by: Alfredo Ochoa, Alex Lara & Gabriel Gonzalez
Thyristor Application Engineers
INTRODUCTION
Some split phase motors are able to operate in forward
and reverse directions since they have two windings for
these purposes. Depending on which winding is energized,
the motor operates in that direction. These motors are espe-
cially used in applications for washing machines, transport
belts, and all kinds of equipment in which the operation in
both directions is needed. One of the most traditional way
to control these kind of motors is through mechanical
relays. Nevertheless, they have a lot of disadvantages
which make them ineffective.
This paper is going to show how triacs can substitute the
function of the mechanical relays for controlling bi–direc-
tional motors offering a higher level of quality and reliabil-
ity for control purposes.
The triac is a three terminal ac semiconductor switch that
is triggered into conduction when a low energy signal is
applied to its gate. Unlike the silicon controlled rectifier or
SCR, the triac will conduct current in either direction when
turned on. The triac also differs from the SCR in that either
a positive or negative gate signal will trigger the triac into
conduction. The triac may be thought of as two comple-
mentary SCRs in parallel.
The triac offers the circuit designer an economical and
versatile means of accurately controlling ac power. It has
several advantages over conventional mechanical switches.
Switch 1
Line
Winding A
 Semiconductor Components Industries, LLC, 1999
January, 2000 – Rev. 0
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APPLICATION NOTE
Since the triac has a positive ’on’ and a zero current ’off’
characteristics, it does not suffer from the contact bounce or
arcing inherent in mechanical switches. The switching
action of the triac is very fast compared to conventional
relays, giving more accurate control. A triac can be trig-
gered by dc, ac, rectified ac or pulses. Because of the low
energy required for triggering a triac, the control circuit can
use any of many low cost solid state devices such as transis-
tors, sensitive gate SCRs and triacs, optically coupled
drivers, and integrated circuits.
DEFINITIONS
The two–phase induction motor consists of a stator with
two windings displaced 90 electrical degrees from each
other in space and squirrel cage rotor or the equivalent. The
ac voltages applied to the two windings are generally phase
displaced from each other 90° in time. When the voltages
magnitudes are equal, the equivalent of balanced two–
phase voltages is applied to the stator. The resultant stator
flux is then similar to a three–phase induction motor. The
motor torque speed curves are also similar to those of a
three–phase motor. The two–phase control motor is usually
built with a high resistance rotor to give a high starting
torque and a dropping torque speed characteristic.
The following schematic diagram shows an ac split phase
motor:
Switch 2
Winding B
205 Publication Order Number:
AND8017/D
 AND8017/D

If switch 1 is activated, rotation in one direction is
obtained; if switch 2 is activated, rotation in the other
direction results. Since the torque is a function of the volt-
age supply, changing the magnitude of this changes the
developed torque of the motor. The stalled torque is
assumed to be linearly proportional to the rms control–
winding voltage.
It is very common to add a resonant L–C circuit
connected between the motor windings in order to damp the
energy stored by each motor winding inductance, avoiding
damage to the switches when the transition from one
direction to the other occurs. In addition, this resonant L–C
circuit helps to have good performance in the motor’s
torque each time it changes its rotation.
The following schematic diagram shows how two triacs
can control the rotation of a split phase motor depending
in which winding is energized. In this case the motor
selected for analysis purposes has the following technical
characteristics: 230Vrms, 1.9 Arms, 1/4 Hp, 60Hz, 1400
RPM.

Split Phase Motor

1/4 Hp, 230 V
RPM 1400

Winding 1 Winding 2
220 VAC 50 Hm m
15 F
60 Hz

MAC210A10FP MT2 MAC210A10FP MT2

2k
51 W 2k
51 W
MT1 MT1
G G
MOV MOV
10 k 10 nF 10 k 10 nF

MOC3042 MOC3042

Direct Negative
Logic Driven by
mC
HC
Microcontroller

The micro is controlling the trigger of the triacs through
optocouplers (MOC3042). The optocoupler protects the
control circuitry (Microcontroller, Logic Gates, etc.) if a
short circuit condition occurs within the power circuitry
since these optocouplers insolate the control part of the
general circuit. The MOVs protects the triacs against to the
high voltage transients caused because of the motor rota-
tion changes, so it is very important to add them in the
power circuit, otherwise the triacs could be damaged easily.
The snubber arrangement provides protection against dV/dt
conditions occurring within the application circuit and the
resonant L–C circuit connected between the motor’s wind-
ings helps to have good performance in the torque of the
motor when it changes its rotation.
In the case that the motor is locked due to some mechan-
ical problem within the application field, the maximum
current peak flowing through the triacs would be 7.2 Amps
(5.02 Amps rms), therefore, the triacs (MAC210A10FP)
would not be damaged since they are able to handle up to
12 A rms.
Nevertheless, it is recommended to add an overload
protector in the power circuit of the motor in order to
protect it against any kind of overload conditions which

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 AND8017/D
could damage the motor in a short period of time since the
current flowing would be higher than its nominal value.
In conclusion, it has been shown how triacs
(MAC210A10FP) substitute the mechanical relay’s
functions to control bi–directional motors offering many
important advantages like reliable control, quiet operation,
long life span, small size, light weight, fast operation, among
others. These are only some of the big advantages that can be
obtained if thyristors are used to control bi–directional
motors. Besides, the total cost of the electronic circuitry does
not exceed to the cost of the conventional mechanical relays.
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A very important consideration is that extreme
environment temperatures could affect the functionality of
the electronic devices, therefore, if operation under extreme
ambient temperatures is needed, the designer must take into
consideration the parameter variation of the electronic
devices in order to establish if any kind of adjustment is
needed within the electronic circuitry.
Another important item to be considered by the designer
is that the triacs have to be mounted on a proper heatsink in
order to assure that the case temperature of the device does
not exceed the specifications shown in the datasheet.
 SECTION 7
MOUNTING TECHNIQUES FOR THYRISTORS
Edited and Updated
INTRODUCTION
Current and power ratings of semiconductors are
inseparably linked to their thermal environment. Except
for lead-mounted parts used at low currents, a heat
exchanger is required to prevent the junction temperature
from exceeding its rated limit, thereby running the risk of
a high failure rate. Furthermore, the semiconductor
industry’s field history indicated that the failure rate of
most silicon semiconductors decreases approximately by
one half for a decrease in junction temperature from
160°C to 135°C.(1) Guidelines for designers of military
power supplies impose a 110°C limit upon junction
temperature.(2) Proper mounting minimizes the tempera-
ture gradient between the semiconductor case and the heat
exchanger.
Most early life field failures of power semiconductors
can be traced to faulty mounting procedures. With metal
packaged devices, faulty mounting generally causes
unnecessarily high junction temperature, resulting in
reduced component lifetime, although mechanical dam-
age has occurred on occasion from improperly mounting
to a warped surface. With the widespread use of various
plastic-packaged semiconductors, the prospect of
mechanical damage is very significant. Mechanical
damage can impair the case moisture resistance or crack
the semiconductor die.
(1) MIL-HANDBOOK — 2178, SECTION 2.2.
(2) “Navy Power Supply Reliability — Design and Manufacturing
Guidelines” NAVMAT P4855-1, Dec. 1982 NAVPUBFORCEN,
5801 Tabor Ave., Philadelphia, PA 19120.
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Figure 7.1 shows an example of doing nearly every-
thing wrong. A tab mount TO-220 package is shown
being used as a replacement for a TO-213AA (TO-66)
part which was socket mounted. To use the socket, the
leads are bent — an operation which, if not properly done,
can crack the package, break the internal bonding wires,
or crack the die. The package is fastened with a
sheet-metal screw through a 1/4″ hole containing a
fiber-insulating sleeve. The force used to tighten the
screw tends to pull the package into the hole, causing
enough distortion to crack the die. In addition the contact
area is small because of the area consumed by the large
hole and the bowing of the package; the result is a much
higher junction temperature than expected. If a rough
heatsink surface and/or burrs around the hole were
displayed in the illustration, most but not all poor
mounting practices would be covered.
PLASTIC BODY
LEADS
PACKAGE HEATSINK
MICA WASHER
SPEED NUT
(PART OF SOCKET)
EQUIPMENT SOCKET FOR
HEATSINK TO-213AA PACKAGE SHEET METAL SCREW
Figure 7.1. Extreme Case of Improperly Mounting
A Semiconductor (Distortion Exaggerated)
 In many situations the case of the semiconductor must
be electrically isolated from its mounting surface. The
isolation material is, to some extent, a thermal isolator as
well, which raises junction operating temperatures. In
addition, the possibility of arc-over problems is
introduced if high voltages are present. Various regulating
agencies also impose creepage distance specifications
which further complicates design. Electrical isolation thus
places additional demands upon the mounting procedure.
Proper mounting procedures usually necessitate orderly
attention to the following:
1. Preparing the mounting surface
2. Applying a thermal grease (if required)
3. Installing the insulator (if electrical isolation is
desired)
4. Fastening the assembly
5. Connecting the terminals to the circuit
In this note, mounting procedures are discussed in
general terms for several generic classes of packages. As
newer packages are developed, it is probable that they
will fit into the generic classes discussed in this note.
Unique requirements are given on data sheets pertaining
to the particular package. The following classes are
defined:
Stud Mount
Flange Mount
Pressfit
Plastic Body Mount
Tab Mount
Surface Mount
Appendix A contains a brief review of thermal
resistance concepts. Appendix B discusses measurement
difficulties with interface thermal resistance tests.
MOUNTING SURFACE PREPARATION
In general, the heatsink mounting surface should have a
flatness and finish comparable to that of the semiconduc-
tor package. In lower power applications, the heatsink
surface is satisfactory if it appears flat against a straight
edge and is free from deep scratches. In high-power
applications, a more detailed examination of the surface is
required. Mounting holes and surface treatment must also
be considered.
Surface Flatness
Surface flatness is determined by comparing the
variance in height (∆h) of the test specimen to that of a
reference standard as indicated in Figure 7.2. Flatness is
normally specified as a fraction of the Total Indicator
Reading (TIR). The mounting surface flatness, i.e.,
∆h/TIR, if less than 4 mils per inch, normal for extruded
aluminum, is satisfactory in most cases.
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TIR = TOTAL INDICATOR READING
SAMPLE
PIECE
TIR ∆h
DEVICE MOUNTING AREA
REFERENCE PIECE
Figure 7.2. Surface Flatness Measurement
Surface Finish
Surface finish is the average of the deviations both
above and below the mean value of surface height. For
minimum interface resistance, a finish in the range of 50
to 60 microinches is satisfactory; a finer finish is costly to
achieve and does not significantly lower contact resis-
tance. Tests conducted by Thermalloy using a copper
TO-204 (TO-3) package with a typical 32-microinch
finish, showed that heatsink finishes between 16 and
64 µ-in caused less than ± 2.5% difference in interface
thermal resistance when the voids and scratches were
filled with a thermal joint compound.(3) Most commer-
cially available cast or extruded heatsinks will require
spotfacing when used in high-power applications. In
general, milled or machined surfaces are satisfactory if
prepared with tools in good working condition.
Mounting Holes
Mounting holes generally should only be large enough
to allow clearance of the fastener. The large thick flange
type packages having mounting holes removed from the
semiconductor die location, such as the TO-3, may
successfully be used with larger holes to accommodate an
insulating bushing, but many plastic encapsulated pack-
ages are intolerant of this condition. For these packages, a
smaller screw size must be used such that the hole for the
bushing does not exceed the hole in the package.
Punched mounting holes have been a source of trouble
because if not properly done, the area around a punched
hole is depressed in the process. This “crater” in the
heatsink around the mounting hole can cause two
problems. The device can be damaged by distortion of the
package as the mounting pressure attempts to conform it
to the shape of the heatsink indentation, or the device may
only bridge the crater and leave a significant percentage
of its heat-dissipating surface out of contact with the
heatsink. The first effect may often be detected immedi-
ately by visual cracks in the package (if plastic), but
usually an unnatural stress is imposed, which results in an
early-life failure. The second effect results in hotter
operation and is not manifested until much later.
(3) Catalog #87-HS-9 (1987), page 8, Thermalloy, Inc., P.O. Box
810839, Dallas, Texas 75381-0839.
 Although punched holes are seldom acceptable in the
relatively thick material used for extruded aluminum
heatsinks, several manufacturers are capable of properly
utilizing the capabilities inherent in both fine-edge
blanking or sheared-through holes when applied to sheet
metal as commonly used for stamped heatsinks. The holes
are pierced using Class A progressive dies mounted on
four-post die sets equipped with proper pressure pads and
holding fixtures.
When mounting holes are drilled, a general practice
with extruded aluminum, surface cleanup is important.
Chamfers must be avoided because they reduce heat
transfer surface and increase mounting stress. However,
the edges must be broken to remove burrs which cause
poor contact between device and heatsink and may
puncture isolation material.
Surface Treatment
Many aluminium heatsinks are black-anodized to
improve radiation ability and prevent corrosion. Anodiz-
ing results in significant electrical but negligible thermal
insulation. It need only be removed from the mounting
area when electrical contact is required. Heatsinks are
also available which have a nickel plated copper insert
under the semiconductor mounting area. No treatment of
this surface is necessary.
Another treated aluminum finish is iridite, or chromate-
acid dip, which offers low resistance because of its thin
surface, yet has good electrical properties because it
resists oxidation. It need only be cleaned of the oils and
films that collect in the manufacture and storage of the
sinks, a practice which should be applied to all heatsinks.
For economy, paint is sometimes used for sinks;
removal of the paint where the semiconductor is attached
is usually required because of paint’s high thermal
resistance. However, when it is necessary to insulate the
semiconductor package from the heatsink, hard anodized
or painted surfaces allow an easy installation for low
voltage applications. Some manufacturers will provide
anodized or painted surfaces meeting specific insulation
voltage requirements, usually up to 400 volts.
It is also necessary that the surface be free from all
foreign material, film, and oxide (freshly bared aluminum
forms an oxide layer in a few seconds). Immediately prior
to assembly, it is a good practice to polish the mounting
area with No. 000 steel wool, followed by an acetone or
alcohol rinse.
INTERFACE DECISIONS
When any significant amount of power is being
dissipated, something must be done to fill the air voids
between mating surfaces in the thermal path. Otherwise
the interface thermal resistance will be unnecessarily high
and quite dependent upon the surface finishes.
For several years, thermal joint compounds, often
called grease, have been used in the interface. They have
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a resistivity of approximately 60°C/W/in whereas air has
1200°C/W/in. Since surfaces are highly pock-marked
with minute voids, use of a compound makes a significant
reduction in the interface thermal resistance of the joint.
However, the grease causes a number of problems, as
discussed in the following section.
To avoid using grease, manufacturers have developed
dry conductive and insulating pads to replace the more
traditional materials. These pads are conformal and
therefore partially fill voids when under pressure.
Thermal Compounds (Grease)
Joint compounds are a formulation of fine zinc or other
conductive particles in the silicone oil or other synthetic
base fluid which maintains a grease-like consistency with
time and temperature. Since some of these compounds do
not spread well, they should be evenly applied in a very
thin layer using a spatula or lintless brush, and wiped
lightly to remove excess material. Some cyclic rotation of
the package will help the compound spread evenly over
the entire contact area. Some experimentation is neces-
sary to determine the correct quantity; too little will not
fill all the voids, while too much may permit some
compound to remain between well mated metal surfaces
where it will substantially increase the thermal resistance
of the joint.
To determine the correct amount, several semiconduc-
tor samples and heatsinks should be assembled with
different amounts of grease applied evenly to one side of
each mating surface. When the amount is correct a very
small amount of grease should appear around the
perimeter of each mating surface as the assembly is
slowly torqued to the recommended value. Examination
of a dismantled assembly should reveal even wetting
across each mating surface. In production, assemblers
should be trained to slowly apply the specified torque
even though an excessive amount of grease appears at the
edges of mating surfaces. Insufficient torque causes a
significant increase in the thermal resistance of the
interface.
To prevent accumulation of airborne particulate matter,
excess compound should be wiped away using a cloth
moistened with acetone or alcohol. These solvents should
not contact plastic-encapsulated devices, as they may
enter the package and cause a leakage path or carry in
substances which might attack the semiconductor chip.
The silicone oil used in most greases has been found to
evaporate from hot surfaces with time and become
deposited on other cooler surfaces. Consequently,
manufacturers must determine whether a microscopically
thin coating of silicone oil on the entire assembly will
pose any problems. It may be necessary to enclose
components using grease. The newer synthetic base
greases show far less tendency to migrate or creep than
those made with a silicone oil base. However, their
currently observed working temperature range are less,
they are slightly poorer on thermal conductivity and
dielectric strength and their cost is higher.
Data showing the effect of compounds on several
package types under different mounting conditions is
shown in Table 7.1. The rougher the surface, the more
valuable the grease becomes in lowering contact resis-
tance; therefore, when mica insulating washers are used,
use of grease is generally mandatory. The joint compound
also improves the breakdown rating of the insulator.
Conductive Pads
Because of the difficulty of assembly using grease and
the evaporation problem, some equipment manufacturers
will not, or cannot, use grease. To minimize the need for
grease, several vendors offer dry conductive pads which
approximate performance obtained with grease. Data for a
greased bare joint and a joint using Grafoil, a dry graphite
compound, is shown in the data of Figure 7.3. Grafoil is
claimed to be a replacement for grease when no electrical
isolation is required; the data indicates it does indeed
perform as well as grease. Another conductive pad
available from Aavid is called KON-DUX. It is made with
a unique, grain oriented, flake-like structure (pat-
ent pending). Highly compressible, it becomes formed to
the surface roughness of both of the heatsink and
semiconductor. Manufacturer’s data shows it to provide
an interface thermal resistance better than a metal
interface with filled silicone grease. Similar dry conduc-
tive pads are available from other manufacturers. They
are a fairly recent development; long term problems, if
they exist, have not yet become evident.

Table 7.1
Approximate Values for Interface Thermal Resistance Data from Measurements Performed
in ON Semiconductor Applications Engineering Laboratory
Dry interface values are subject to wide variation because of extreme dependence upon surface conditions. Unless otherwise noted the
case temperature is monitored by a thermocouple located directly under the die reached through a hole in the heatsink.
(See Appendix B for a discussion of Interface Thermal Resistance Measurements.)

Package Type and Data Interface Thermal Resistance (°C/W)

Test Metal-to-Metal With Insulator
JEDEC Torque
Torq e See
Outlines Description In-Lb Dry Lubed Dry Lubed Type Note
DO-203AA, TO-210AA 10-32 Stud 15 0.3 0.2 1.6 0.8 3 mil
TO-208AB 7/16″ Hex Mica
DO-203AB, TO-210AC 1/4-28 Stud 25 0.2 0.1 0.8 0.6 5 mil
TO-208 11/16″ Hex Mica
DO-208AA Pressfit, 1/2″ — 0.15 0.1 — — —
TO-204AA Diamond Flange 6 0.5 0.1 1.3 0.36 3 mil 1
(TO-3) Mica
TO-213AA Diamond Flange 6 1.5 0.5 2.3 0.9 2 mil
(TO-66) Mica
TO-126 Thermopad 6 2.0 1.3 4.3 3.3 2 mil
1/4″ x 3/8″ Mica
TO-220AB Thermowatt 8 1.2 1.0 3.4 1.6 2 mil 1, 2
Mica
NOTES: 1. See Figures 3 and 4 for additional data on TO-3 and TO-220 packages.
2. Screw not insulated. See Figure 7.

INSULATION CONSIDERATIONS semiconductor and the heatsink. Heatsink isolation is not

Since most power semiconductors use are vertical
device construction it is common to manufacture power
semiconductors with the output electrode (anode, collec-
tor or drain) electrically common to the case; the problem
of isolating this terminal from ground is a common one.
For lowest overall thermal resistance, which is quite
important when high power must be dissipated, it is best
to isolate the entire heatsink/semiconductor structure
from ground, rather than to use an insulator between the
always possible, however, because of EMI requirements,
safety reasons, instances where a chassis serves as a
heatsink or where a heatsink is common to several
non-isolated packages. In these situations insulators are
used to isolate the individual components from the
heatsink. Newer packages, such as the ON Semiconductor
Isolated TO-220 Full Pack, was introduced to save the
equipment manufacturer the burden of addressing the
isolation problem.

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Insulator Thermal Resistance manufacturers. It is obvious that with some arrangements,
When an insulator is used, thermal grease is of greater the interface thermal resistance exceeds that of the
importance than with a metal-to-metal contact, because semiconductor (junction to case).
two interfaces exist instead of one and some materials, Referring to Figure 7.3, one may conclude that when
such as mica, have a hard, markedly uneven surface. With high power is handled, beryllium oxide is unquestion-
many isolation materials reduction of interface thermal ably the best. However, it is an expensive choice. (It
resistance of between 2 to 1 and 3 to 1 are typical when should not be cut or abraided, as the dust is highly
grease is used. toxic.) Thermafilm is filled polyimide material which
Data obtained by Thermalloy, showing interface resis- is used for isolation (variation of Kapton). It is a
tance for different insulators and torques applied to popular material for low power applications because of
TO-204 (TO-3) and TO-220 packages, are shown in its low cost ability to withstand high temperatures, and
Figure 7.3, for bare and greased surfaces. Similar ease of handling in contrast to mica which chips and
materials to those shown are available from several flakes easily.

2 1
THERMAL RESISTANCE FROM TRANSISTOR CASE

THERMAL RESISTANCE FROM TRANSISTOR CASE

TO MOUNTING SURFACE, R θ CS ( ° C/WATT)

0.9

TO MOUNTING SURFACE, R θ CS ( ° C/WATT)

1.6 0.8
(1)
1.4 (1) Thermalfilm, .002 (.05) thick. 0.7
(2) (2) Mica, .003 (.08) thick.
1.2 (3) (3) Mica, .002 (.05) thick. 0.6
(4) (4) Hard anodized, .020 (.51) thick. (1)
1 (5) 0.5
(5) Aluminum oxide, .062 (1.57) thick.
0.8 (6) Beryllium oxide, .062 (1.57) thick. 0.4
(7) Bare joint — no finish. (2)
(3)
0.6 (6) 0.3 (5)
(8) Grafoil, .005 (.13) thick.* (4)
(7)
0.4 *Grafoil is not an insulating material. 0.2
(6)
0.2 (7)
0.1
(8)
0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6
MOUNTING SCREW TORQUE (IN-LBS) MOUNTING SCREW TORQUE (IN-LBS)

0 72 145 217 290 362 435 0 72 145 217 290 362 435
INTERFACE PRESSURE (psi) INTERFACE PRESSURE (psi)

(a). TO-204AA (TO-3) (b). TO-204AA (TO-3)

Without Thermal Grease With Thermal Grease
5 5
THERMAL RESISTANCE FROM TRANSISTOR CASE
THERMAL RESISTANCE FROM TRANSISTOR CASE

(1)
TO MOUNTING SURFACE, R θ CS ( ° C/WATT)
TO MOUNTING SURFACE, R θ CS ( ° C/WATT)

4 4
(1) Thermalfilm, .022 (.05) thick.
(2)
(2) Mica, .003 (.08) thick.
(3)
(3) Mica, .002 (.05) thick.
3 (4) 3
(4) Hard anodized, .020 (.51) thick.
(5) Thermalsil II, .009 (.23) thick.
(6) Thermalsil III, .006 (.15) thick. (1)
2 (7) Bare joint — no finish. 2
(2)
(5) (8) Grafoil, .005 (.13) thick* (3)
(6) *Grafoil is not an insulating material. (4)
(7)
1 (8) 1 (7)

0 0
0 1 2 (IN-LBS) 4 5 6 0 1 2 3 4 5 6
MOUNTING SCREW TORQUE MOUNTING SCREW TORQUE
(IN-LBS) (IN-LBS)

(c). TO-220 (d). TO-220

Without Thermal Grease With Thermal Grease

Figure 7.3. Interface Thermal Resistance for TO-204, TO-3 and TO-220 Packages using Different Insulating
Materials as a Function of Mounting Screw Torque (Data Courtesy Thermalloy)

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 A number of other insulating materials are also shown.
They cover a wide range of insulation resistance, thermal
resistance and ease of handling. Mica has been widely
used in the past because it offers high breakdown voltage
and fairly low thermal resistance at a low cost but it
certainly should be used with grease.
Silicone rubber insulators have gained favor because
they are somewhat conformal under pressure. Their
ability to fill in most of the metal voids at the interface
reduces the need for thermal grease. When first
introduced, they suffered from cut-through after a few
years in service. The ones presently available have solved
this problem by having imbedded pads of Kapton of
The thermal resistance of some silicone rubber insula-
tors is sensitive to surface flatness when used under a
fairly rigid base package. Data for a TO-204AA (TO-3)
package insulated with Thermasil is shown on Figure 7.4.
Observe that the “worst case” encountered (7.5 mils)
yields results having about twice the thermal resistance of
the “typical case” (3 mils), for the more conductive
insulator. In order for Thermasil III to exceed the
performance of greased mica, total surface flatness must
be under 2 mils, a situation that requires spot finishing.
1.2

INTERFACE THERMAL RESISTANCE (° C/W)

fiberglass. By comparing Figures 7.3(c) and 7.3(d), it can 1 (1)
(2)
be noted that Thermasil, a filled silicone rubber, without
grease has about the same interface thermal resistance as
0.8
greased mica for the TO-220 package.
A number of manufacturers offer silicone rubber
insulators. Table 7.2 shows measured performance of a 0.6
number of these insulators under carefully controlled,
nearly identical conditions. The interface thermal resis- 0.4
tance extremes are over 2:1 for the various materials. It is
also clear that some of the insulators are much more (1) Thermalsil II, .009 inches (.23 mm) thick.
0.2
tolerant than others of out-of-flat surfaces. Since the tests (2) Thermalsil III, .006 inches (.15 mm) thick.
were performed, newer products have been introduced.
The Bergquist K-10 pad, for example, is described as 0
0 0.002 0.004 0.006 0.008 0.01
having about 2/3 the interface resistance of the Sil Pad
1000 which would place its performance close to the TOTAL JOINT DEVIATION FROM FLAT OVER
TO-3 HEADER SURFACE AREA (INCHES)
Chomerics 1671 pad. AAVID also offers an isolated pad
called Rubber-Duc, however it is only available vulca- Data courtesy of Thermalloy
nized to a heatsink and therefore was not included in
the comparison. Published data from AAVID shows Figure 7.4. Effect of Total Surface Flatness on
RθCS below 0.3°C/W for pressures above 500 psi. Interface Resistance Using Silicon Rubber Insulators
However, surface flatness and other details are not
specified so a comparison cannot be made with other data Silicon rubber insulators have a number of unusual
in this note. characteristics. Besides being affected by surface flatness
and initial contact pressure, time is a factor. For example,
in a study of the Cho-Therm 1688 pad thermal interface
impedance dropped from 0.90°C/W to 0.70°C/W at the
Table 7.2 Thermal Resistance of Silicone Rubber Pads
end of 1000 hours. Most of the change occurred during the
RθCS @ RθCS @ first 200 hours where RθCS measured 0.74°C/W. The
Manufacturer Product 3 Mils* 7.5 Mils*
torque on the conventional mounting hardware had
Wakefield Delta Pad 173-7 .790 1.175 decreased to 3 in-lb from an initial 6 in-lb. With
Bergquist Sil Pad K-4 .752 1.470
Stockwell Rubber 1867 .742 1.015
non-conformal materials, a reduction in torque would
Bergquist Sil Pad 400-9 .735 1.205 have increased the interface thermal resistance.
Thermalloy Thermalsil II .680 1.045 Because of the difficulties in controlling all variables
Shin-Etsu TC-30AG .664 1.260 affecting tests of interface thermal resistance, data from
Bergquist Sil Pad 400-7 .633 1.060 different manufacturers is not in good agreement.
Chomerics 1674 .592 1.190
Wakefield Delta Pad 174-9 .574 .755
Table 7.3 shows data obtained from two sources. The
Bergquist Sil Pad 1000 .529 .935 relative performance is the same, except for mica which
Ablestik Thermal Wafers .500 .990 varies widely in thickness. Appendix B discusses the
Thermalloy Thermalsil III .440 1.035 variables which need to be controlled. At the time of this
Chomerics 1671 .367 .655 writing ASTM Committee D9 is developing a standard for
* Test Fixture Deviation from flat from Thermalloy EIR86-1010. interface measurements.

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 Table 7.3 Performance of Silicon Rubber Insulators consist of multiple chips and integrated circuits as well as
Tested per MIL-I-49456 the more conventional single chip devices.
The newer insulated packages can be grouped into two
Measured Thermal Resistance (°C/W)
categories. The first has insulation between the semicon-
Material Thermalloy Data(1) Berquist Data(2) ductor chips and the mounting base; an exposed area of
Bare Joint, greased 0.033 0.008 the mounting base is used to secure the part. Case 806
BeO, greased 0.082 — (ICePAK) and Case 388 (TO-258AA) (see Figure 7.6) are
Cho Therm, 1617
Cho-Therm, 0.233 — examples of parts in this category. The second category
Q Pad — 0.009
(
(non-insulated))
contains parts which have a plastic overmold covering the
Sil-Pad, K-10 0.263 0.200 metal mounting base. The Fully Isolated, Case 221C,
Thermasil III 0.267 — illustrated in Figure 7.8, is an example of parts in the
Mica, greased 0.329 0.400 second category.
Sil-Pad 1000 0.400 0.300 Parts in the first category — those with an exposed
Ch th
Cho-therm 1674 0 433
0.433 —
Th
Thermasilil II 0 500
0.500 —
metal flange or tab — are mounted the same as their
Sil-Pad
Sil Pad 400 0.533
0 533 0.440
0 440 non-insulated counterparts. However, as with any mount-
Sil Pad K-4
Sil-Pad K4 0 583
0.583 0 440
0.440 ing system where pressure is bearing on plastic, the
overmolded type should be used with a conical compres-
1. From Thermalloy EIR 87-1030
2. From Berquist Data Sheet sion washer, described later in this note.

FASTENER AND HARDWARE

The conclusions to be drawn from all this data is that
some types of silicon rubber pads, mounted dry, will out
perform the commonly used mica with grease. Cost may
be a determining factor in making a selection.
Insulation Resistance
When using insulators, care must be taken to keep the
mating surfaces clean. Small particles of foreign matter
can puncture the insulation, rendering it useless or
seriously lowering its dielectric strength. In addition,
particularly when voltages higher than 300 V are
encountered, problems with creepage may occur. Dust
and other foreign material can shorten creepage distances
significantly; so having a clean assembly area is impor-
tant. Surface roughness and humidity also lower insula-
tion resistance. Use of thermal grease usually raises the
withstand voltage of the insulating system but excess
must be removed to avoid collecting dust. Because of
these factors, which are not amenable to analysis, hi-pot
testing should be done on prototypes and a large margin of
safety employed.
Insulated Electrode Packages
Because of the nuisance of handling and installing the
accessories needed for an insulated semiconductor mount-
ing, equipment manufacturers have longed for cost-effec-
tive insulated packages since the 1950’s. The first to
appear were stud mount types which usually have a layer
of beryllium oxide between the stud hex and the can.
Although effective, the assembly is costly and requires
manual mounting and lead wire soldering to terminals on
top of the case. In the late eighties, a number of
electrically isolated parts became available from various
semiconductor manufacturers. These offerings presently
CHARACTERISTICS
Characteristics of fasteners, associated hardware, and
the tools to secure them determine their suitability for use
in mounting the various packages. Since many problems
have arisen because of improper choices, the basic
characteristics of several types of hardware are discussed
next.
Compression Hardware
Normal split ring lock washers are not the best choice
for mounting power semiconductors. A typical #6 washer
flattens at about 50 pounds, whereas 150 to 300 pounds is
needed for good heat transfer at the interface. A very
useful piece of hardware is the conical, sometimes called
a Belleville washer, compression washer. As shown in
Figure 7.5, it has the ability to maintain a fairly constant
pressure over a wide range of its physical deflection —
generally 20% to 80%. When installing, the assembler
applies torque until the washer depresses to half its
original height. (Tests should be run prior to setting up the
assembly line to determine the proper torque for the
fastener used to achieve 50% deflection.) The washer will
absorb any cyclic expansion of the package, insulating
washer or other materials caused by temperature changes.
Conical washers are the key to successful mounting of
devices requiring strict control of the mounting force or
when plastic hardware is used in the mounting scheme.
They are used with the large face contacting the packages.
A new variation of the conical washer includes it as part
of a nut assembly. Called a Sync Nut, the patented device
can be soldered to a PC board and the semiconductor
mounted with 6-32 machine screw.(4)
(4) ITW Shakeproof, St. Charles Road, Elgin, IL 60120.

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 280
PRESSURE ON PACKAGE (LB-F)
240
200
160
120
80
40
0 Aluminum rivets are much preferred over steel because
0 20 40 60 80
DEFLECTION OF WASHER DURING MOUNTING (%)
Figure 7.5. Characteristics of the Conical
Compression Washers Designed for Use
with Plastic Body Mounted Semiconductors
Clips
Fast assembly is accomplished with clips. When only a
few watts are being dissipated, the small board mounted
or free-standing heat dissipators with an integral clip,
offered by several manufacturers, result in a low cost
assembly. When higher power is being handled, a separate
clip may be used with larger heatsinks. In order to provide
proper pressure, the clip must be specially designed for a
particular heatsink thickness and semiconductor package.
Clips are especially popular with plastic packages such
as the TO-220 and TO-126. In addition to fast assembly,
the clip provides lower interface thermal resistance than
other assembly methods when it is designed for proper
pressure to bear on the top of the plastic over the die. The
TO-220 package usually is lifted up under the die location
when mounted with a single fastener through the hole in
the tab because of the high pressure at one end.
Machine Screws
Machine screws, conical washers, and nuts (or sync-
nuts) can form a trouble-free fastener system for all types
of packages which have mounting holes. However, proper
torque is necessary. Torque ratings apply when dry;
therefore, care must be exercised when using thermal
grease to prevent it from getting on the threads as
inconsistent torque readings result. Machine screw heads
should not directly contact the surface of plastic packages
types as the screw heads are not sufficiently flat to provide
properly distributed force. Without a washer, cracking of
the plastic case may occur.
Self-Tapping Screws
Under carefully controlled conditions, sheet-metal
screws are acceptable. However, during the tapping
process with a standard screw, a volcano-like protrusion
will develop in the metal being threaded; an unacceptable
surface that could increase the thermal resistance may
result. When standard sheet metal screws are used, they
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must be used in a clearance hole to engage a speednut. If
a self tapping process is desired, the screw type must be
used which roll-forms machine screw threads.
Rivets
Rivets are not a recommended fastener for any of the
plastic packages. When a rugged metal flange-mount
package is being mounted directly to a heatsink, rivets can
be used provided press-riveting is used. Crimping force
must be applied slowly and evenly. Pop-riveting should
never be used because the high crimping force could
cause deformation of most semiconductor packages.
100
less pressure is required to set the rivet and thermal
conductivity is improved.
The hollow rivet, or eyelet, is preferred over solid
rivets. An adjustable, regulated pressure press is used such
that a gradually increasing pressure is used to pan the
eyelet. Use of sharp blows could damage the semi-
conductor die.
Solder
Until the advent of the surface mount assembly
technique, solder was not considered a suitable fastener
for power semiconductors. However, user demand has led
to the development of new packages for this application.
Acceptable soldering methods include conventional belt-
furnace, irons, vapor-phase reflow, and infrared reflow. It
is important that the semiconductor temperature not
exceed the specified maximum (usually 260°C) or the die
bond to the case could be damaged. A degraded die bond
has excessive thermal resistance which often leads to a
failure under power cycling.
Adhesives
Adhesives are available which have coefficients of
expansion compatible with copper and aluminum.(5)
Highly conductive types are available; a 10 mil layer has
approximately 0.3°C/W interface thermal resistance.
Different types are offered: high strength types for
non-field-serviceable systems or low strength types for
field-serviceable systems. Adhesive bonding is attractive
when case mounted parts are used in wave soldering
assembly because thermal greases are not compatible
with the conformal coatings used and the greases foul the
solder process.
Plastic Hardware
Most plastic materials will flow, but differ widely in this
characteristic. When plastic materials form parts of the
fastening system, compression washers are highly valuable
to assure that the assembly will not loosen with time and
temperature cycling. As previously discussed, loss of contact
pressure will increase interface thermal resistance.
(5) Robert Batson, Elliot Fraunglass and James P. Moran, “Heat Dissipation
Through Thermalloy Conductive Adhesives, ” EMTAS ’83. Conference,
February 1–3, Phoenix, AZ; Society of Manufacturing Engineers, One
SME Drive, P.O. Box 930, Dearborn, MI 48128.
215
 FASTENING TECHNIQUES
Each of the various classes of packages in use requires
different fastening techniques. Details pertaining to each
type are discussed in following sections. Some general
considerations follow.
To prevent galvanic action from occurring when devices
are used on aluminum heatsinks in a corrosive atmosphere,
many devices are nickel- or gold-plated. Consequently,
precautions must be taken not to mar the finish.
Another factor to be considered is that when a copper
based part is rigidly mounted to an aluminium heatsink, a
bimetallic system results which will bend with temperature
changes. Not only is the thermal coefficient of expansion
different for copper and aluminium, but the temperature
gradient through each metal also causes each component to
bend. If bending is excessive and the package is mounted by
two or more screws the semiconductor chip could be
damaged. Bending can be minimized by:
need a spacer or combination spacer and isolation bushing
to raise the screw head above the top surface of the
plastic.
The popular TO-220 Package and others of similar con-
struction lift off the mounting surface as pressure is
applied to one end. (See Appendix B, Figure B1.) To
counter this tendency, at least one hardware manufacturer
offers a hard plastic cantilever beam which applies more
even pressure on the tab.(6) In addition, it separates the
mounting screw from the metal tab. Tab mount parts may
also be effectively mounted with clips as shown in
Figure 7.10(c). To obtain high pressure without cracking
the case, a pressure spreader bar should be used under the
clip. Interface thermal resistance with the cantilever beam
or clips can be lower than with screw mounting.
(6) Catalog, Edition 18, Richco Plastic Company, 5825 N. Tripp Ave.,
Chicago, IL 60546.

1. Mounting the component parallel to the heatsink fins

to provide increased stiffness.
2. Allowing the heatsink holes to be a bit oversized
so that some slip between surfaces can occur as
temperature changes.
3. Using a highly conductive thermal grease or mounting
pad between the heatsink and semicondutor to minimize
the temperature gradient and allow for movement.

Tab Mount CASE 221A-07 CASE 221B-04

The tab mount class is composed of a wide array of (TO-220AB) (TO-220AC)
packages as illustrated in Figure 7.6. Mounting consider-
ations for all varieties are similar to that for the popular
TO-220 package, whose suggested mounting arrange-
ments and hardware are shown in Figure 7.7. The
rectangular washer shown in Figure 7.7(a) is used to
minimize distortion of the mounting flange; excessive
distortion could cause damage to the semiconductor chip.
Use of the washer is only important when the size of the
mounting hole exceeds 0.140 inch (6–32 clearance).
Larger holes are needed to accommodate the lower CASE 314B CASE 314D CASE 339
insulating bushing when the screw is electrically con- (5 PIN TO-220)
nected to the case; however, the holes should not be larger
than necessary to provide hardware clearance and should
never exceed a diameter of 0.250 inch. Flange distortion
is also possible if excessive torque is used during
mounting. A maximum torque of 8 inch-pounds is
suggested when using a 6–32 screw.
Care should be exercised to assure that the tool used to
drive the mounting screw never comes in contact with the
CASE 340-02 CASE 387-01 CASE 806-05
plastic body during the driving operation. Such contact (TO-218) (TO-254AA) (ICePAK)
can result in damage to the plastic body and internal CASE 388-01
device connections. To minimize this problem, (TO-258AA)
ON Semiconductor TO-220 packages have a chamfer on
one end. TO-220 packages of other manufacturers may Figure 7.6. Several Types of Tab-Mount Parts

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216
 The copper sheet has a hole for mounting; plastic is
(a). Preferred Arrangement (b). Alternate Arrangement
for Isolated Mounting when
molded enveloping the chip but leaving the mounting
for Isolated or Non-Isolated
Mounting. Screw is at Screw must be at Heat Sink hole open. The low thermal resistance of this construction
Semiconductor Case Potential. 4-40 Hardware is is obtained at the expense of a requirement that strict
Potential. 6-32 Hardware is used. attention be paid to the mounting procedure.
Used. The fully isolated power package (Case 221C-02) is
Use Parts Listed below.
similar to a TO-220 except that the tab is encased in
Use Parts Listed
Below plastic. Because the mounting force is applied to plastic,
the mounting procedure differs from a standard TO-220
and is similar to that of the Thermopad.
4-40 PAN OR HEX HEAD SCREW
Several types of fasteners may be used to secure these
6-32 HEX
HEAD SCREW packages; machine screws, eyelets, or clips are preferred.
FLAT WASHER
With screws or eyelets, a conical washer should be used
which applies the proper force to the package over a fairly
INSULATING BUSHING wide range of deflection and distributes the force over a
fairly large surface area. Screws should not be tightened
with any type of air-driven torque gun or equipment
(1) RECTANGULAR STEEL which may cause high impact. Characteristics of a
WASHER
SEMICONDUCTOR
(CASE 221, 221A)
suitable conical washer is shown in Figure 7.5.
Figure 7.9 shows details of mounting Case 77 devices.
SEMICONDUCTOR
(CASE 221,221A) Clip mounting is fast and requires minimum hardware,
however, the clip must be properly chosen to insure that
(2) RECTANGULAR
INSULATOR
the proper mounting force is applied. When electrical
isolation is required with screw mounting, a bushing
HEATSINK RECTANGULAR inside the mounting hole will insure that the screw threads
INSULATOR
do not contact the metal base.
The fully isolated power package, (Case 221C, 221D
(2) BUSHING
HEATSINK and 340B) permits the mounting procedure to be greatly
simplified over that of a standard TO-220. As shown in
(3) FLAT WASHER Figure 7.10(c), one properly chosen clip, inserted into two
COMPRESSION WASHER slotted holes in the heatsink, is all the hardware needed.
(4) CONICAL WASHER Even though clip pressure is much lower than obtained
with a screw, the thermal resistance is about the same for
6-32 HEX NUT 4-40 HEX NUT
either method. This occurs because the clip bears directly
on top of the die and holds the package flat while the
screw causes the package to lift up somewhat under the
die. (See Figure B1 of Appendix B.) The interface should
(1) Used with thin chassis and/or large hole. consist of a layer of thermal grease or a highly conductive
(2) Used when isolation is required.
thermal pad. Of course, screw mounting shown in
(3) Required when nylon bushing is used.
Figure 7.10(b) may also be used but a conical compres-
sion washer should be included. Both methods afford a
Figure 7.7. Mounting Arrangements for Tab major reduction in hardware as compared to the conven-
Mount TO-220 tional mounting method with a TO-220 package which is
shown in Figure 7.10(a).
In situations where a tab mount package is making
direct contact with the heatsink, an eyelet may be used,
provided sharp blows or impact shock is avoided.

Plastic Body Mount

The Thermopad and fully isolated plastic power
packages shown in Figure 7.8 are typical of packages in
this group. They have been designed to feature minimum CASE 77 CASE 221C-02 CASE 221D-02 CASE 340B-03
(TO-225AA/ (Fully Isolated) (Fully Isolated) (Fully Isolated)
size with no compromise in thermal resistance. For the TO-126)
(THERMOPAD)
Thermopad (Case 77) parts this is accomplished by
die-bounding the silicon chip on one side of a thin copper
sheet; the opposite side is exposed as a mounting surface. Figure 7.8. Plastic Body-Mount Packages

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217
 4-40 SCREW
MACHINE SCREW OR
SHEET METAL SCREW
PLAIN WASHER
INSULATING BUSHING
HEAT SINK COMPRESSION WASHER
SURFACE
THERMOPAD PACKAGE

INSULATING WASHER
(OPTIONAL) INSULATOR

HEATSINK
MACHINE OR SPEED
NUT
COMPRESSION WASHER

(a). Machine Screw Mounting NUT

(a). Screw-Mounted TO-220

EYELET 6-32 SCREW

PLAIN WASHER

COMPRESSION WASHER

INSULATING WASHER
(OPTIONAL) HEATSINK

COMPRESSION WASHER

NUT

(b). Eyelet Mounting (b). Screw-Mounted Fully Isolated

CLIP

HEATSINK
(c). Clips

(c). Clip-Mounted Fully Isolated

Figure 7.9. Recommended Mounting Arrangements Figure 7.10. Mounting Arrangements for the Fully
for TO-225AA (TO-126) Thermopad Packages Isolated Power Package as Compared to a
Conventional TO-220

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Surface Mount
Although many of the tab mount parts have been
surface mounted, special small footprint packages for
mounting power semiconductors using surface mount
assembly techniques have been developed. The DPAK,
shown in Figure 11, for example, will accommodate a die
up to 112 mils x 112 mils, and has a typical thermal
resistance around 2°C/W junction to case. The thermal
resistance values of the solder interface is well under
1°C/W. The printed circuit board also serves as the
heatsink.
Standard Glass-Epoxy 2-ounce boards do not make
very good heatsinks because the thin foil has a high
thermal resistance. As Figure 7.12 shows, thermal
resistance assymtotes to about 20°C/W at 10 square
inches of board area, although a point of diminishing
returns occurs at about 3 square inches.
Boards are offered that have thick aluminium or copper
substrates. A dielectric coating designed for low thermal
resistance is overlayed with one or two ounce copper foil
for the preparation of printed conductor traces. Tests run
on such a product indicate that case to substrate thermal
resistance is in the vicinity of 1°C/W, exact values
depending upon board type.(7) The substrate may be an
effective heatsink itself, or it can be attached to a
conventional finned heatsink for improved performance.
Since DPAK and other surface mount packages are
designed to be compatible with surface mount assembly
techniques, no special precautions are needed other than
to insure that maximum temperature/time profiles are not
exceeded.
(7) Herb Fick, “Thermal Management of Surface Mount Power
Devices,” Power conversion and Intelligent Motion, August 1987.
CASE 369-07 CASE 369A-13
Figure 7.11. Surface Mount D-PAK Parts
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219
100
Rθ JA, THERMAL RESISTANCE ( ° C/W)
PCB, 1/16 IN THICK
80
G10/FR4, 2 OUNCE
EPOXY GLASS BOARD,
DOUBLE SIDED
60
40
20
0
2 4 6 8 10
PCB PAD AREA (IN2)
Figure 7.12. Effect of Footprint Area on Thermal
Resistance of DPAK Mounted on a Glass-Epoxy Board
FREE AIR AND SOCKET MOUNTING
In applications where average power dissipation is on
the order of a watt or so, most power semiconductors may
be mounted with little or no heatsinking. The leads of the
various metal power packages are not designed to support
the packages; their cases must be firmly supported to
avoid the possibility of cracked seals around the leads.
Many plastic packages may be supported by their leads in
applications where high shock and vibration stresses are
not encountered and where no heatsink is used. The leads
should be as short as possible to increase vibration
resistance and reduce thermal resistance. As a general
practice however, it is better to support the package. A
plastic support for the TO-220 Package and other similar
types is offered by heatsink accessory vendors.
In many situations, because its leads are fairly heavy,
the CASE 77 (TO-225AA)(TO-127) package has sup-
ported a small heatsink; however, no definitive data is
available. When using a small heatsink, it is good practice
to have the sink rigidly mounted such that the sink or the
board is providing total support for the semiconductor.
Two possible arrangements are shown in Figure 7.13. The
arrangement of part (a) could be used with any plastic
package, but the scheme of part (b) is more practical with
Case 77 Thermopad devices. With the other package
types, mounting the transistor on top of the heatsink is
more practical.
 CONNECTING AND HANDLING TERMINALS
HEATSINK
Pins, leads, and tabs must be handled and connected
properly to avoid undue mechanical stress which could
TO-225AA cause semiconductor failure. Change in mechanical
CASE 77
HEATSINK SURFACE dimensions as a result of thermal cycling over operating
temperature extremes must be considered. Standard
metal, plastic, and RF stripline packages each have some
special considerations.

TWIST LOCKS
OR
CIRCUIT BOARD SOLDERABLE
LEGS
(a). Simple Plate, Vertically Mounted
HEATSINK
TO-225AA
CASE 77
HEATSINK
SURFACE
CIRCUIT BOARD
(b). Commercial Sink, Horizontally Mounted
Figure 7.13. Methods of Using Small Heatsinks With
Plastic Semiconductor Packages
In certain situations, in particular where semiconductor
testing is required or prototypes are being developed,
sockets are desirable. Manufacturers have provided
sockets for many of the packages available from
ON Semiconductor. The user is urged to consult manufac-
turers’ catalogs for specific details. Sockets with Kelvin
connections are necessary to obtain accurate voltage
readings across semiconductor terminals.
Plastic Packages
The leads of the plastic packages are somewhat flexible
and can be reshaped although this is not a recommended
procedure. In many cases, a heatsink can be chosen which
makes lead-bending unnecessary. Numerous-lead and tab-
forming options are available from ON Semiconductor on
large quantity orders. Preformed leads remove the users
risk of device damage caused by bending.
If, however, lead-bending is done by the user, several
basic considerations should be observed. When bending
the lead, support must be placed between the point of
bending and the package. For forming small quantities of
units, a pair of pliers may be used to clamp the leads at the
case, while bending with the fingers or another pair of
pliers. For production quantities, a suitable fixture should
be made.
The following rules should be observed to avoid
damage to the package.
1. A leadbend radius greater than 1/16 inch is advisable
for TO-225AA (CASE 77) and 1/32 inch for TO-220.
2. No twisting of leads should be done at the case.
3. No axial motion of the lead should be allowed with
respect to the case.
The leads of plastic packages are not designed to
withstand excessive axial pull. Force in this direction
greater than 4 pounds may result in permanent damage to
the device. If the mounting arrangement imposes axial
stress on the leads, a condition which may be caused by
thermal cycling, some method of strain relief should be
devised. When wires are used for connections, care
should be exercised to assure that movement of the wire
does not cause movement of the lead at the lead-to-plastic
junctions. Highly flexible or braided wires are good for
providing strain relief.
Wire-wrapping of the leads is permissible, provided
that the lead is restrained between the plastic case and
the point of the wrapping. The leads may be soldered;
the maximum soldering temperature, however, must
not exceed 260°C and must be applied for not more than
10 seconds at a distance greater than 1/8 inch from the
plastic case.

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 CLEANING CIRCUIT BOARDS
It is important that any solvents or cleaning chemicals
used in the process of degreasing or flux removal do not
affect the reliability of the devices. Alcohol and unchlori-
nated Freon solvents are generally satisfactory for use
with plastic devices, since they do not damage the
package. Hydrocarbons such as gasoline and chlorinated
Freon may cause the encapsulant to swell, possibly
damaging the transistor die.
When using an ultrasonic cleaner for cleaning circuit
boards, care should be taken with regard to ultrasonic
energy and time of application. This is particularly true if
any packages are free-standing without support.
THERMAL SYSTEM EVALUATION
Assuming that a suitable method of mounting the
semiconductor without incurring damage has been
achieved, it is important to ascertain whether the junction
temperature is within bounds.
In applications where the power dissipated in the semi-
conductor consists of pulses at a low duty cycle, the
instantaneous or peak junction temperature, not average
temperature, may be the limiting condition. In this case,
use must be made of transient thermal resistance data. For
a full explanation of its use, see ON Semiconductor
Application Note, AN569.
Other applications, notably RF power amplifiers or
switches driving highly reactive loads, may create severe
current crowding conditions which render the traditional
concepts of thermal resistance or transient thermal
impedance invalid. In this case, transistor safe operating
area, thyristor di/dt limits, or equivalent ratings as
applicable, must be observed.
Fortunately, in many applications, a calculation of the
average junction temperature is sufficient. It is based on
the concept of thermal resistance between the junction
and a temperature reference point on the case. (See
Appendix A.) A fine wire thermocouple should be used,
such as #36 AWG, to determine case temperature.
Average operating junction temperature can be computed
from the following equation:
+ TC ) RqJC
TJ PD
where TJ = junction temperature (°C)
TC = case temperature (°C)
RθJC = thermal resistance junction-
to-case as specified on the
data sheet (°C/W)
PD = power dissipated in the device (W)
The difficulty in applying the equation often lies in
determining the power dissipation. Two commonly
used empirical methods are graphical integration and
substitution.
Graphical Integration
Graphical integration may be performed by taking
oscilloscope pictures of a complete cycle of the voltage
and current waveforms, using a limit device. The pictures
should be taken with the temperature stabilized. Corre-
sponding points are then read from each photo at a
suitable number of time increments. Each pair of voltage
and current values are multiplied together to give
instantaneous values of power. The results are plotted on
linear graph paper, the number of squares within the curve
counted, and the total divided by the number of squares
along the time axis. The quotient is the average power
dissipation. Oscilloscopes are available to perform these
measurements and make the necessary calculations.
Substitution
This method is based upon substituting an easily
measurable, smooth dc source for a complex waveform. A
switching arrangement is provided which allows operat-
ing the load with the device under test, until it stabilizes in
temperature. Case temperature is monitored. By throwing
the switch to the “test” position, the device under test is
connected to a dc power supply, while another pole of the
switch supplies the normal power to the load to keep it
operating at full power level. The dc supply is adjusted so
that the semiconductor case temperature remains approxi-
mately constant when the switch is thrown to each
position for about 10 seconds. The dc voltage and current
values are multiplied together to obtain average power. It
is generally necessary that a Kelvin connection be used
for the device voltage measurement.

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 APPENDIX A
THERMAL RESISTANCE CONCEPTS

The basic equation for heat transfer under steady-state
conditions is generally written as:
q + hADT (1)
where q = rate of heat transfer or power
dissipation (PD)
h = heat transfer coefficient,
A = area involved in heat transfer,
∆T = temperature difference between
regions of heat transfer.
However, electrical engineers generally find it easier to
work in terms of thermal resistance, defined as the ratio of
temperature to power. From Equation 1, thermal resis-
tance, Rθ, is
Rq + DTńq + 1ńhA (2)
The coefficient (h) depends upon the heat transfer
mechanism used and various factors involved in that
particular mechanism.
An analogy between Equation (2) and Ohm’s Law is
often made to form models of heat flow. Note that T could
be thought of as a voltage thermal resistance corresponds
to electrical resistance (R); and, power (q) is analogous to
current (I). This gives rise to a basic thermal resistance
model for a semiconductor as indicated by Figure A1.
The equivalent electrical circuit may be analyzed by
using Kirchoff’s Law and the following equation results:
TJ + PD(RqJC ) RqCS ) RqSA) ) TA (3)
where TJ = junction temperature,
PD = power dissipation
RθJC = semiconductor thermal resistance
(junction to case),
RθCS = interface thermal resistance
(case to heatsink),
RθSA = heatsink thermal resistance
(heatsink to ambient),
TA = ambient temperature.
The thermal resistance junction to ambient is the sum of
the individual components. Each component must be
minimized if the lowest junction temperature is to result.
The value for the interface thermal resistance, RθCS,
may be significant compared to the other thermal-resis-
tance terms. A proper mounting procedure can minimize
RθCS.
The thermal resistance of the heatsink is not absolutely
constant; its thermal efficiency increases as ambient
temperature increases and it is also affected by orientation
of the sink. The thermal resistance of the semiconductor is
also variable; it is a function of biasing and temperature.
Semiconductor thermal resistance specifications are nor-
mally at conditions where current density is fairly
uniform. In some applications such as in RF power
amplifiers and short-pulse applications, current density is
not uniform and localized heating in the semiconductor
chip will be the controlling factor in determining power
handling ability.

TJ, JUNCTION TEMPERATURE

DIE RθJC
PD
TC, CASE TEMPERATURE
INSULATORS
RθCS
TS, HEATSINK
HEATSINK TEMPERATURE
RθSA
TA, AMBIENT
FLAT WASHER TEMPERATURE

SOLDER TERMINAL

NUT REFERENCE TEMPERATURE

Figure A1. Basic Thermal Resistance Model Showing Thermal to Electrical Analogy for a Semiconductor

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 APPENDIX B
MEASUREMENT OF INTERFACE THERMAL RESISTANCE
Measuring the interface thermal resistance RθCS
appears deceptively simple. All that’s apparently needed
is a thermocouple on the semiconductor case, a thermo-
couple on the heatsink, and a means of applying and
measuring DC power. However, RθCS is proportional to
the amount of contact area between the surfaces and
consequently is affected by surface flatness and finish and
the amount of pressure on the surfaces. The fastening
method may also be a factor. In addition, placement of the
thermocouples can have a significant influence upon the
results. Consequently, values for interface thermal resis-
tance presented by different manufacturers are not in good
agreement. Fastening methods and thermocouple loca-
tions are considered in this Appendix.
When fastening the test package in place with screws,
thermal conduction may take place through the screws,
for example, from the flange ear on a TO-3 package
directly to the heatsink. This shunt path yields values
which are artificially low for the insulation material and
dependent upon screw head contact area and screw
material. MIL-I-49456 allows screws to be used in tests
for interface thermal resistance probably because it can be
argued that this is “application oriented.”
Thermalloy takes pains to insulate all possible shunt
conduction paths in order to more accurately evaluate
insulation materials. The ON Semiconductor fixture uses
an insulated clamp arrangement to secure the package
which also does not provide a conduction path.
As described previously, some packages, such as a
TO-220, may be mounted with either a screw through the
tab or a clip bearing on the plastic body. These two
methods often yield different values for interface thermal
resistance. Another discrepancy can occur if the top of the
package is exposed to the ambient air where radiation and
convection can take place. To avoid this, the package
should be covered with insulating foam. It has been
estimated that a 15 to 20% error in RθCS can be incurred
from this source.
Another significant cause for measurement discrepan-
cies is the placement of the thermocouple to measure the
semiconductor case temperature. Consider the TO-220
package shown in Figure B1. The mounting pressure at
one end causes the other end — where the die is located
— to lift off the mounting surface slightly. To improve
contact, ON Semiconductor TO-220 Packages are slightly
concave. Use of a spreader bar under the screw lessens the
lifting, but some is inevitable with a package of this
structure. Three thermocouple locations are shown:
a. The ON Semiconductor location is directly under the
die reached through a hole in the heatsink. The thermo-
couple is held in place by a spring which forces the
thermocouple into intimate contact with the bottom of the
semi’s case.
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b. The JEDEC location is close to the die on the top
surface of the package base reached through a blind hole
drilled through the molded body. The thermocouple is
swaged in place.
c. The Thermalloy location is on the top portion of the
tab between the molded body and the mounting screw.
The thermocouple is soldered into position.
E.I.A.
DIE THERMALLOY
ON SEMICONDUCTOR
Figure B1. JEDEC TO-220 Package Mounted to
Heatsink Showing Various Thermocouple Locations
and Lifting Caused by Pressure at One End
Temperatures at the three locations are generally not the
same. Consider the situation depicted in the figure.
Because the only area of direct contact is around the
mounting screw, nearly all the heat travels horizontally
along the tab from the die to the contact area. Consequent-
ly, the temperature at the JEDEC location is hotter than at
the Thermalloy location and the ON Semiconductor
location is even hotter. Since junction-to-sink thermal
resistance must be constant for a given test setup, the
calculated junction-to-case thermal resistance values
decrease and case-to-sink values increase as the “case”
temperature thermocouple readings become warmer.
Thus the choice of reference point for the “case”
temperature is quite important.
There are examples where the relationship between the
thermocouple temperatures are different from the pre-
vious situation. If a mica washer with grease is installed
between the semiconductor package and the heatsink,
tightening the screw will not bow the package; instead,
the mica will be deformed. The primary heat conduction
path is from the die through the mica to the heatsink. In
this case, a small temperature drop will exist across the
vertical dimension of the package mounting base so that
the thermocouple at the EIA location will be the hottest.
The thermocouple temperature at the Thermalloy location
will be lower but close to the temperature at the EIA
location as the lateral heat flow is generally small. The
ON Semiconductor location will be coolest.
 The EIA location is chosen to obtain the highest
temperature on the case. It is of significance because
power ratings are supposed to be based on this reference
point. Unfortunately, the placement of the thermocouple
is tedious and leaves the semiconductor in a condition
unfit for sale.
The ON Semiconductor location is chosen to obtain the
highest temperature of the case at a point where,
hopefully, the case is making contact to the heatsink.
Once the special heatsink to accommodate the thermo-
couple has been fabricated, this method lends itself to
production testing and does not mark the device. How-
ever, this location is not easily accessible to the user.
The Thermalloy location is convenient and is often
chosen by equipment manufacturers. However, it also
blemishes the case and may yield results differing up to
1°C/W for a TO-220 package mounted to a heatsink
without thermal grease and no insulator. This error is
small when compared to the thermal resistance of heat
dissipaters often used with this package, since power
dissipation is usually a few watts. When compared to the
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specified junction-to-case values of some of the higher
power semiconductors becoming available, however, the
difference becomes significant and it is important that the
semiconductor manufacturer and equipment manufac-
turer use the same reference point.
Another EIA method of establishing reference tempera-
tures utilizes a soft copper washer (thermal grease is used)
between the semiconductor package and the heatsink. The
washer is flat to within 1 mil/inch, has a finish better than
63 µ-inch, and has an imbedded thermocouple near its
center. This reference includes the interface resistance
under nearly ideal conditions and is therefore application-
oriented. It is also easy to use but has not become widely
accepted.
A good way to improve confidence in the choice of case
reference point is to also test for junction-to-case thermal
resistance while testing for interface thermal resistance. If
the junction-to-case values remain relatively constant as
insulators are changed, torque varied, etc., then the case
reference point is satisfactory.
 SECTION 8
RELIABILITY AND QUALITY
Edited and Updated
USING TRANSIENT THERMAL RESISTANCE
DATA IN HIGH POWER PULSED THYRISTOR
APPLICATIONS
INTRODUCTION
For a certain amount of dc power dissipated in a
semiconductor, the junction temperature reaches a value
which is determined by the thermal conductivity from the
junction (where the power is dissipated) to the air or heat
sink. When the amount of heat generated in the junction
equals the heat conducted away, a steady–state condition is
reached and the junction temperature can be calculated by
the simple equation:
TJ = PD RθJR + TR (1a)
where TJ = junction temperature
TR = temperature at reference point
PD = power dissipated in the junction
RθJR = steady–state thermal resistance from
RθJR = junction to the temperature reference
RθJR = point.
Power ratings of semiconductors are based upon steady–
state conditions, and are determined from equation (1a)
under worst case conditions, i.e.:
PD(max) + TJ(max) – TR
RqJR(max)
(1b)
TJ(max) is normally based upon results of an operating life
test or serious degradation with temperature of an impor-
tant device characteristic. TR is usually taken as 25°C, and
RθJR can be measured using various techniques. The
reference point may be the semiconductor case, a lead, or
the ambient air, whichever is most appropriate. Should the
reference temperature in a given application exceed the
reference temperature of the specification, PD must be
correspondingly reduced.
Thermal resistance allows the designer to determine
power dissipation under steady state conditions. Steady
state conditions between junction and case are generally
achieved in one to ten seconds while minutes may be
required for junction to ambient temperature to become
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stable. However, for pulses in the microsecond and
millisecond region, the use of steady–state values will not
yield true power capability because the thermal response of
the system has not been taken into account.
Note, however, that semiconductors also have pulse
power limitations which may be considerably lower – or
even greater – than the allowable power as deduced from
thermal response information. For transistors, the second
breakdown portion of the pulsed safe operating area
defines power limits while surge current or power ratings
are given for diodes and thyristors. These additional ratings
must be used in conjunction with the thermal response to
determine power handling capability.
To account for thermal capacity, a time dependent factor
r(t) is applied to the steady–state thermal resistance.
Thermal resistance, at a given time, is called transient
thermal resistance and is given by:
RθJR(t) = r(t) @ RθJR (2)
The mathematical expression for the transient thermal
resistance has been determined to be extremely complex.
The response is, therefore, plotted from empirical data.
Curves, typical of the results obtained, are shown in
Figure 8.1. These curves show the relative thermal
response of the junction, referenced to the case, resulting
from a step function change in power. Observe that the total
Ǹ
percentage difference is about 10:1 in the short pulse ( t)
region. However, the values of thermal resistance vary over
20:1.
Many ON Semiconductor data sheets have a graph
similar to that of Figure 8.2. It shows not only the thermal
response to a step change in power (the D = 0, or single
pulse curve) but also has other curves which may be used to
obtain an effective r(t) value for a train of repetitive pulses
with different duty cycles. The mechanics of using the
curves to find TJ at the end of the first pulse in the train, or
to find TJ(pk) once steady state conditions have been
achieved, are quite simple and require no background in
the subject. However, problems where the applied power
pulses are either not identical in amplitude or width, or the
duty cycle is not constant, require a more thorough
understanding of the principles illustrated in the body of
this report.
USE OF TRANSIENT THERMAL RESISTANCE DATA The temperature is desired, a) at the end of the first pulse
Part of the problem in applying thermal response data b) at the end of a pulse under steady state conditions.
stems from the fact that power pulses are seldom rectangu- For part (a) use:
lar, therefore to use the r(t) curves, an equivalent rectangu-
TJ = r(5 ms) RθJCPD + TC
lar model of the actual power pulse must be determined.
Methods of doing this are described near the end of this The term r(5 ms) is read directly from the graph of
note. Figure 8.2 using the D = 0 curve,
Before considering the subject matter in detail, an
example will be given to show the use of the thermal ∴ TJ = 0.49  1.17  50 + 75 = 28.5 + 75 = 103.5
response data sheet curves. Figure 8.2 is a representative The peak junction temperature rise under steady conditions
graph which applies to a 2N5886 transistor. is found by:
TJ = r(t, D) RθJC PD + TC
Pulse power PD = 50 Watts
Duration t = 5 milliseconds D = t/τp = 5/20 – 0.25. A curve for D= 0.25 is not on the
Period τp = 20 milliseconds graph; however, values for this duty cycle can be interpo-
Case temperature, TC = 75°C lated between the D = 0.2 and D = 0.5 curves. At 5 ms,
Junction to case thermal resistance, read r(t) ≈ 0.59.
RθJC = 1.17°C/W
TJ = 0.59  1.17  50 + 75 = 34.5 + 75 = 109.5°C

1.0
0.7
r (t) , Transient Thermal Resistance

0.5 DIE SIZE

CASE (Sq. Mils)
0.3
1 Case 77 3,600
(Normalized)

0.2
2 Case 77 8,000
0.1 2
1
0.07
0.05
0.03
0.02

0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 2000 5000 10,000
t, Time (ms)

Figure 8.1. Thermal Response, Junction to Case, of Case 77 Types For a Step of Input Power

1.0
0.7 D = 0.5
r (t) , Transient Thermal Resistance

0.5
0.3 0.2
0.2
(Normalized)

0.1
0.1 0.05
0.07 0.02
0.05
0.03 0.01
0.02 SINGLE PULSE
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
t, Time (ms)

Figure 8.2. Thermal Response Showing the Duty Cycle Family of Curves

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 The average junction temperature increase above
Pin
ambient is: P2
TJ(average) – TC = RθJC PD D (a)
= (1.17) (50) (0.25) (3) Input P1
Power P4
= 14.62°C P3
Note that TJ at the end of any power pulse does not equal
t0 t1 t2 t3 t4 t5 t6 t7 Time
the sum of the average temperature rise (14.62°C in the
example) and that due to one pulse (28.5°C in example), Pin
because cooling occurs between the power pulses. P2
(b)
While junction temperature can be easily calculated for a Power P1
steady pulse train where all pulses are of the same Pulses
P4
amplitude and pulse duration as shown in the previous Separated P3
Into
example, a simple equation for arbitrary pulse trains with Components –P3
random variations is impossible to derive. However, since –P4 Time
the heating and cooling response of a semiconductor is –P1
essentially the same, the superposition principle may be
–P2
used to solve problems which otherwise defy solution.
Using the principle of superposition each power interval (c)
TJ
is considered positive in value, and each cooling interval Change
negative, lasting from time of application to infinity. By Caused
multiplying the thermal resistance at a particular time by by
Components
the magnitude of the power pulse applied, the magnitude of Time
the junction temperature change at a particular time can be
obtained. The net junction temperature is the algebraic sum
of the terms. TJ
(d)
The application of the superposition principle is most Composite
easily seen by studying Figure 8.3. TJ
Figure 8.3(a) illustrates the applied power pulses. Fig- Time
ure 8.3(b) shows these pulses transformed into pulses lasting
from time of application and extending to infinity; at to, P1 Figure 8.3. Application of Superposition Principle
starts and extends to infinity; at t1, a pulse (– P1) is considered
to be present and thereby cancels P1 from time t1, and so forth
with the other pulses. The junction temperature changes due 50
P PK1 Peak Power

to these imagined positive and negative pulses are shown in 40 P1 P3

Figure 8.3(c). The actual junction temperature is the algebraic
(Watts)

30
sum as shown in Figure 8.3(d). P2
20
Problems may be solved by applying the superposition
10
principle exactly as described; the technique is referred to
0
as Method 1, the pulse–by–pulse method. It yields satisfac- t0 t1 t2 t3 t4 t5
tory results when the total time of interest is much less than 0 1.0 2.0 3.0 4.0
t, Time (ms)
the time required to achieve steady state conditions, and
must be used when an uncertainty exists in a random pulse
Figure 8.4. Non–Repetitive Pulse Train (Values Shown
train as to which pulse will cause the highest temperature.
Apply to Example in Appendix)
Examples using this method are given in Appendix A
under Method 1.
For uniform trains of repetitive pulses, better answers
result and less work is required by averaging the power t T5
pulses to achieve an average power pulse; the temperature
is calculated at the end of one or two pulses following the Po
average power pulse. The essence of this method is shown
t0 t1 t2 t3 t4 t5 t6 t7 t8 t9
in Figure 8.6. The duty cycle family of curves shown in
t
Figure 8.2 and used to solve the example problem is based
2t
on this method; however, the curves may only be used for a Po = 5 Watts
uniform train after steady state conditions are achieved. (Conditions for numerical examples t = 5 ms
Method 2 in Appendix A shows equations for calculating t = 20 ms
the temperature at the end of the nth or n + 1 pulse in a
uniform train. Where a duty cycle family of curves is Figure 8.5. A Train of Equal Repetitive Pulses
available, of course, there is no need to use this method.

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 A point to remember is that a high amplitude pulse of a
nth n+1 given amount of energy will produce a higher rise in
pulse pulse
junction temperature than will a lower amplitude pulse of
Po
longer duration having the same energy.
Pavg

t t
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
t
P1

Figure 8.6. Model For a Repetitive Equal Pulse Train (a)

ÉÉÉÉÉÉ P1T1 = A

ÉÉÉÉÉÉ
A

Temperature rise at the end of a pulse in a uniform train

before steady state conditions are achieved is handled by T1
Method 3 (a or b) in the Appendix. The method is basically
the same as for Method 2, except the average power is
modified by the transient thermal resistance factor at the PP PP
time when the average power pulse ends.
0.7 PP 0.7 PP
A random pulse train is handled by averaging the pulses
(b) 0.91 t
applied prior to situations suspected of causing high peak 0.71 t
temperatures and then calculating junction temperature at
the end of the nth or n + 1 pulse. Part c of Method 3 shows t t
an example of solving for temperature at the end of the 3rd
pulse in a three pulse burst.

HANDLING NON–RECTANGULAR PULSES

ÉÉÉÉÉÉÉÉÉÉÉ
The thermal response curves, Figure 8.1, are based on a P1 (t1 – t0) + P2 (t2 – t1) = A
P1

ÉÉÉÉÉÉÉÉÉÉÉ
step change of power; the response will not be the same for

ÉÉÉÉÉÉÉÉÉÉÉ
other waveforms. Thus far in this treatment we have P2
assumed a rectangular shaped pulse. It would be desirable

ÉÉÉÉÉÉÉÉÉÉÉ
(c)
to be able to obtain the response for any arbitrary A

ÉÉÉÉÉÉÉÉÉÉÉ
waveform, but the mathematical solution is extremely
unwieldy. The simplest approach is to make a suitable t0 t1 t2
equivalent rectangular model of the actual power pulse and
use the given thermal response curves; the primary rule to
observe is that the energy of the actual power pulse and the
Figure 8.7. Modeling of Power Pulses
model are equal.
Experience with various modeling techniques has lead to
the following guidelines: As an example, the case of a transistor used in a dc to ac
power converter will be analyzed. The idealized wave-
For a pulse that is nearly rectangular, a pulse model forms of collector current, IC, collector to emitter voltage,
having an amplitude equal to the peak of the actual pulse, VCE, and power dissipation PD, are shown in Figure 8.8.
with the width adjusted so the energies are equal, is a A model of the power dissipation is shown in
conservative model. (See Figure 8.7(a)). Figure 8.8(d). This switching transient of the model is
made, as was suggested, for a triangular pulse.
Sine wave and triangular power pulses model well with For example, TJ at the end of the rise, on, and fall times,
the amplitude set at 70% of the peak and the width T1, T2 and T3 respectively, will be found.
adjusted to 91% and 71%, respectively, of the baseline Conditions:
width (as shown on Figure 8.7(b)). TO–3 package,
RθJC = 0.5°C/W, IC = 60A, VCE(off) = 60 V
A power pulse having a sin2 shape models as a triangular TA = 50°C
waveform. tf = 80 µs, tr = 20 µs
VCE(sat) = 0.3 V @ 60 A
Power pulses having more complex waveforms could be Frequency = 2 kHz∴τ = 500 µs
Pon = (60) (0.3) = 18 W

modeled by using two or more pulses as shown in
Figure 8.7(c). Pf = 30 30 = 900 W = Pr

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 Assume that the response curve in Figure 8.1 for a die

Collector–Emitter Voltage
area of 58,000 square mils applies. Also, that the device is
mounted on an MS–15 heat sink using Dow Corning toff ton
tf tr
DC340 silicone compound with an air flow of 1.0 lb/min
(a) VCE
flowing across the heat–sink. (From MS–15 Data Sheet,
RθCS = 0.1°C/W and RθSA = 0.55°C/W).

Time
Procedure: Average each pulse over the period using t
equation 1–3 (Appendix A, Method 2), i.e.,

Collector Current
Pavg + 0.7 Pr 0.71 tr ) Pon ton ) 0.7 Pf 0.71 tf
t t t (b) IC

+ (0.7) (900) (0.71) (20)

500
) (18) (150)
500
Time
) (0.7) (900) (0.71) 500
80

Power Dissipation
PD
+ 17.9 ) 5.4 ) 71.5 Pf Pr

+ 94.8 W
(c)

Pon

t(Time)
From equation 1–4, Method 2A:

T1 = [Pavg + (0.7 Pr – Pavg) @ r(t1 – to)] RθJC

PD 0.7 Pf
T1 T2T3
0.7 Pr 0.7 Pf
(d)
Pon
At this point it is observed that the thermal response
curves of Figure 8.1 do not extend below 100 µs. Heat t(Time)
0.7 tr ton 0.7 tf
transfer theory for one dimensional heat flow indicates that
Ǹ
the response curve should follow the t law at small times.
t0 t1 t2 t3

Using this as a basis for extending the curve, the response

Figure 8.8. Idealized Waveforms of IC, VCE and
at 14.2 µs is found to be 0.023.
PD in a DC to AC Inverter

We then have:
For the final point T3 we have:
T1 = [94.8 + (630 – 94.8).023] (0.5)
@ @
@ @
T3 = [Pavg – Pavg r(t3 – to) + 0.7 Pr
T1 = (107.11)(0.5) = 53.55°C

@
T3 = r(t3 – to) – 0.7 Pr r(t3 – t1) + Pon

@ @
For T2 we have, by using superposition:

@
T3 = r(t3 – t1) – Pon r(t3 – t2)

@ @
T2 = [Pavg – Pavg r(t2 – to) + 0.7 Pr

@
T3 = + 0.7 Pf r(t3 – t2)] RθJC
T2 = r(t2 – to) – 0.7 Pr r(t2 – t1) + Pon

@
T3 = [Pavg + (0.7 Pr – Pavg) r(t3 – to) +

@
T2 = r(t2 – t1)] RθJC

@
T3 = (Pon – 0.7 Pr) r(t3 – t1) + (0.7 Pf – Pon)

@
T2 = [Pavg + (0.7 Pr – Pavg) r(t2 – to) +

@ @
T3 = r(t3 – t2)] RθJC
T2 = (Pon – 0.7 Pr) r(t2 – t1)] RθJC
T3 = [94.8 + (535.2) r(221 µs) + (–612) r(206.8 µs

T2 = @
T2 = [94.8 + (630 – 94.8)
r(150 µs)] (0.5)
@ r(164 µs) + (18 – 630) T3 = + (612) @ r(56.8µs)] (0.5)
T3 = [94.8 + (535.2)(0.09) – (612) (0.086) +
T2 = [94.8 + (535.2)(.079) – (612)(.075)] (0.5)
T3 = (612)(0.045)] (0.5)
T2 = [94.8 + 42.3 – 45.9] (0.5)
T3 = [94.8 + 481.7– 52.63 + 27.54] (0.5)
T2 = (91.2)(0.5) = 45.6°C
T3 = (117.88)(0.5) = 58.94°C

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 The junction temperature at the end of the rise, on, and Table 8.1. Several Possible Methods of Solutions
fall times, TJ1, TJ2, and TJ3, is as follows:
1. Junction Temperature Rise Using Pulse–By–Pulse
TJ1 = T1 + TA + RθCA Pavg@ Method
A. Temperature rise at the end of the nth pulse for pulses
RθCA = RθCS = RθSA = 0.1 + 0.55 with unequal amplitude, spacing, and duration.

@
TJ1 = 53.55 + 50 + (0.65)(94.8) = 165.17°C B. Temperature rise at the end of the nth pulse for pulses
TJ2 = T2 + TA + RθCA Pavg with equal amplitude, spacing, and duration.
2. Temperature Rise Using Average Power Concept
TJ2 = 45.6 + 50 + (0.65)(94.8)
Under Steady State Conditions For Pulses Of Equal

@
TJ2 = 157.22°C
TJ3 = T3 + TA + RθCA Pavg
TJ3 = 58.94 + 50 + (0.65)(94.8)
TJ3 = 170.56°C
TJ(avg) = Pavg (RθJC + RθCS + RθSA) + TA
TJ(avg) = (94.8)(0.5 + 0.1 + 0.55) + 50
TJ(avg) = (94.8)(1.15) + 50 = 159.02°C
Inspection of the results of the calculations T1, T2, and
T3 reveal that the term of significance in the equations is
the average power. Even with the poor switching times
there was a peak junction temperature of 11.5°C above the
average value. This is a 7% increase which for most
applications could be ignored, especially when switching
times are considerably less. Thus the product of average
power and steady state thermal resistance is the determin-
Amplitude, Spacing, And Duration
A. At the end of the nth pulse.
B. At the end of the (n + 1) pulse.
3. Temperature Rise Using Average Power Concept
Under Transient Conditions.
A. At the end of the nth pulse for pulses of equal
amplitude, spacing and duration.
B. At the end of the n + 1 pulse for pulses of equal
amplitude, spacing and duration.
C. At the end of the nth pulse for pulses of unequal
amplitude, spacing and duration.
D. At the end of the n + 1 pulse for pulses of unequal
amplitude, spacing and duration.
METHOD 1A – FINDING TJ AT THE END OF THE Nth
PULSE IN A TRAIN OF UNEQUAL AMPLITUDE,
SPACING, AND DURATION

ȍ
ing factor for junction temperature rise in this application. General Equation:

+
n
SUMMARY Tn Pi [r(t2n–1 – t2i–2) (1–1)
This report has explained the concept of transient
thermal resistance and its use. Methods using various
+
i 1
– r(tn–1 – t2i–1)]RθJC
degrees of approximations have been presented to deter-
mine the junction temperature rise of a device. Since the where n is the number of pulses and Pi is the peak value
thermal response data shown is a step function response, of the ith pulse.
modeling of different wave shapes to an equivalent To find temperature at the end of the first three pulses,
rectangular pulse of pulses has been discussed. Equation 1–1 becomes:
The concept of a duty cycle family of curves has also
been covered; a concept that can be used to simplify T1 = P1 r(t1) RθJC (1–1A)
calculation of the junction temperature rise under a T2 = [P1 r(t3) – P1 r(t3 – t1) (1–1B)
repetitive pulse train.
T2 = + P2 r(t3 – t2)] RθJC
APPENDIX A METHODS OF SOLUTION T3 = [P1 r(t5) – P1 r(t5 – t1) + P2 r(t5 – t2) (1–1C)
In the examples, a type 2N3647 transistor will be used; T3 = – P2 r(t5 – t3) + P3 r(t5 – t4)] RθJC
its steady state thermal resistance, RθJC, is 35°C/W and its
value for r(t) is shown in Figure A1. Example:
Conditions are shown on Figure 4 as:
Definitions: P1 = 40 W t0 = 0 t3 = 1.3 ms
P2 = 20 W t1 = 0.1 ms t4 = 3.3 ms
P1, P2, P3 ... Pn = power pulses (Watts)
P3 = 30 W t2 = 0.3 ms t5 = 3.5 ms
T1, T2, T3 ... Tn = junction to case temperature at
T end of P1, P2, P3 ... Pn Therefore,
t1 – t0 = 0.1 ms t3 – t1 = 1.2 ms
t0, t1, t2, ... tn = times at which a power pulse t2 – t1 = 0.2 ms t5 – t1 = 3.4 ms
begins or ends t3 – t2 = 1 ms t5 – t2 = 3.2 ms
r(tn – tk) = transient thermal resistance factor at t4 – t3 = 2 ms t5 – t3 = 2.2 ms
end of time interval (tn – tk). t5 – t4 = 0.2 ms

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Procedure:
Find r(tn – tk) for preceding time intervals from Figure 8.2,
then substitute into Equations 1–1A, B, and C.
T1 = P1 r(t1) RθJC = 40 @ @ 0.05 35 = 70°C
T2 = [P1 r(t3) – P1 r(t3 – t1) + P2 r(t3 – t2)] RθJC
T2 = [40 (0.175) – 40 (0.170) + 20 (0.155)] 35
T2 = [40 (0.175 – 0.170) + 20 (0.155)] 35
T2 = [0.2 + 3.1] 35 = 115.5°C
T3 = [P1 r(t5) – P1 r(t5 – t1) + P2 r(t5 – t2)
T3 = – P2 r(t5 – t3) + P3 r(t5 – t4)] θJC
T3 = [40 (0.28) – 40 (0.277) + 20 (0.275) – 20 (0.227)
T3 = + 30 (0.07)] 35
T3 = [40 (0.28 – 0.277) + 20 (0.275 – 0.227)
@
T3 = + 30 (0.07)] 35
T3 = [0.12 + 0.96 + 2.1]{ 35 = 3.18 35 = 111.3°C
Note, by inspecting the last bracketed term in the
equations above that very little residual temperature is left
from the first pulse at the end of the second and third pulse.
Also note that the second pulse gave the highest value of
junction temperature, a fact not so obvious from inspection
of the figure. However, considerable residual temperature
from the second pulse was present at the end of the third
pulse.
METHOD 1B – FINDING TJ AT THE END OF THE Nth
PULSE IN A TRAIN OF EQUAL AMPLITUDE, SPACING,
AND DURATION
The general equation for a train of equal repetitive pulses
can be derived from Equation 1–1. Pi = PD, ti = t, and the
spacing between leading edges or trailing edges of adjacent
pulses is τ.
General Equation:
Tn = PDRθJC
i
ȍ
+
n
r[(n – i) τ +
1 t]
– r[(n – i) τ]
Expanding:
Tn = PD RθJC r[(n – 1) τ + t] – r[(n – 1) τ]
Tn = + r[(n – 2) τ + t) – r[(n – 2) τ] + r[(n – 3)
Tn = τ + t] – r[(n – 3) τ] + . . . + r[(n – i) τ + t]
Tn = – r[(n – i) τ] . . . . . + r(t)]
{Relative amounts of temperature residual from P
1, P2, and
P3 respectively are indicated by the terms in brackets.
For 5 pulses, equation 1–2A is written:
T5 = PD RθJC [r(4 τ + t) – r(4τ) + r(3τ + t)]
T5 = – r(3τ) + r(2τ + t) – r(2τ) + r(τ + t)
T5 = – r(τ) + r(t)]
Example:
Conditions are shown on Figure 8.5 substituting values
into the preceding expression:
T5 = (5) (35) [r(4.20 + 5) – r(4.20) + r(3.20 + 5)
T5 = + r(3.20) + r(2.20 + 5) – r(2.20) + r(20 + 5)
T5 = – r(20) + r(5)]
T5 = (5) (35) [0.6 – 0.76 + 0.73 – 0.72 + 0.68
T5 = – 0.66 + 0.59 – 0.55 + 0.33] – (5)(35)(0.40)
T5 = 70.0°C
Note that the solution involves the difference between
terms nearly identical in value. Greater accuracy will be
obtained with long or repetitive pulse trains using the
technique of an average power pulse as used in Methods 2
and 3.
METHOD 2 – AVERAGE POWER METHOD, STEADY
STATE CONDITION
The essence of this method is shown in Figure 8.6.
Pulses previous to the nth pulse are averaged. Temperature
due to the nth or n + 1 pulse is then calculated and
combined properly with the average temperature.
Assuming the pulse train has been applied for a period of
time (long enough for steady state conditions to be
established), we can average the power applied as:
Pavg + PD t
t
(1–3)
(1–2)
METHOD 2A – FINDING TEMPERATURE AT THE END
OF THE Nth PULSE
Applicable Equation:
Tn = [Pavg + (PD – Pavg) r(t)] RθJC (1–4)
or, by substituting Equation 1–3 into 1–4,
ƪ ǒ Ǔ ƫ
(1–2A)
Tn + t)
t
1– tt r(t) PD RqJC (1–5)
The result of this equation will be conservative as it adds
a temperature increase due to the pulse (PD – Pavg) to the
average temperature. The cooling between pulses has not
been accurately accounted for; i.e., TJ must actually be less
than TJ(avg) when the nth pulse is applied.
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Example: Find Tn for conditions of Figure 8.5.
Procedure: Find Pavg from equation (1–3) and
substitute values in equation (1–4) or
(1–5).
Tn = [(1.25) + (5.0 – 1.25)(0.33)] (35)
Tn = 43.7 + 43.2 = 86.9°C
METHOD 2B – FINDING TEMPERATURE AT THE END
OF THE N + 1 PULSE
METHOD 3 – AVERAGE POWER METHOD,
TRANSIENT CONDITIONS
The idea of using average power can also be used in the
transient condition for a train of repetitive pulses. The
previously developed equations are used but Pavg must be
modified by the thermal response factor at time t(2n – 1).
METHOD 3A – FINDING TEMPERATURE AT THE END
OF THE Nth PULSE FOR PULSES OF EQUAL
AMPLITUDE, SPACING AND DURATION

ƪ ǒ Ǔƫ
Applicable Equation:
Applicable Equation:

Tn + 1 = [Pavg + (PD – Pavg) r(t + τ) Tn + t

tr t
(2n–1) ) 1 – tt r(t) PD RθJC (1–8)
(1–6)
Tn + 1 + PD r(t) – PD r(τ)] RθJC
Conditions: (See Figure 8.5)
or, by substituting equation 1–3 into 1–6, Procedure: At the end of the 5th pulse

Tn + 1 = t
t
) ǒ Ǔ
1– tt r(t ))
t
(1–7)
(See Figure 8.7) . . .

@
T5 = [5/20 r(85) + (1 – 5/20)r(5)] (5)(35)

) r(t) * r( )t PDRθJC
T5 = [(0.25)(0765) + (0.75)(0.33)] (175)
T5 = 77°C

Example: Find Tn for conditions of Figure 8.5.
Procedure: Find Pavg from equation (1–3) and
substitute into equation (1–6) or (1–7).
Tn + 1 = [(1.25) + (5 – 1.25)(0.59) + (5)(0.33)
Tn + 1 – (5)(0.56)] (35) = 80.9°C
Equation (1–6) gives a lower and more accurate value for
temperature than equation (1–4). However, it too gives a
This value is a little higher than the one calculated by
summing the results of all pulses; indeed it should be,
because no cooling time was allowed between Pavg and the
nth pulse. The method whereby temperature was calculated
at the n + 1 pulse could be used for greater accuracy.
METHOD 3B – FINDING TEMPERATURE AT THE END
OF THE N + 1 PULSE FOR PULSES OF EQUAL
AMPLITUDE, SPACING AND DURATION
Applicable Equation:

ǒ Ǔ
higher value than the true TJ at the end of the n + 1th pulse.
The error occurs because the implied value for TJ at the end
of the nth pulse, as was pointed out, is somewhat high. Tn + 1 = t r(t
t
) 1–t
2n–1) t
Adding additional pulses will improve the accuracy of the (1–9)
calculation up to the point where terms of nearly equal r(t ) ) ) r(t) * r( ) PD RθJC
t t
value are being subtracted, as shown in the examples using
the pulse by pulse method. In practice, however, use of this
Example: Conditions as shown on Figure 8.5. Find
method has been found to yield reasonable design values
temperature at the end of the 5th pulse.
and is the method used to determine the duty cycle of
family of curves – e.g., Figure 8.2.
Note that the calculated temperature of 80.9°C is 10.9°C For n + 1 = 5, n = 4, t2n–1 = t7 = 65 ms,
higher than the result of example 1B, where the tempera-
ture was found at the end of the 5th pulse. Since the thermal
response curve indicates thermal equilibrium in 1 second,
T5 = 5 r(65 ms)
20
) ǒ Ǔ
1 – 5 r(25 ms)
20
50 pulses occurring 20 milliseconds apart will be required ) r(5 ms) * r(20 ms) (5)(35)
to achieve stable average and peak temperatures; therefore, T5 = [(0.25)(0.73) + (0.75)(0.59) + 0.33 – 0.55](5)(35)
steady state conditions were not achieved at the end of the
5th pulse. T5 = 70.8°C

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 The answer agrees quite well with the answer of Method This result is high because in the actual case considerable
1B where the pulse–by–pulse method was used for a cooling time occurred between P2 and P3 which allowed TJ
repetitive train. to become very close to TC. Better accuracy is obtained
when several pulses are present by using equation 1–10 in
METHOD 3C – FINDING TJ AT THE END OF THE Nth
order to calculate TJ – tC at the end of the nth + 1 pulse. This
PULSE IN A RANDOM TRAIN
technique provides a conservative quick answer if it is easy
The technique of using average power does not limit
to determine which pulse in the train will cause maximum
itself to a train of repetitive pulses. It can be used also
junction temperature.
where the pulses are of unequal magnitude and duration.
Since the method yields a conservative value of junction
temperature rise it is a relatively simple way to achieve a
first approximation. For random pulses, equations 1–4 METHOD 3D – FINDING TEMPERATURE AT THE END
through 1–7 can be modified. It is necessary to multiply OF THE N + 1 PULSE IN A RANDOM TRAIN
Pavg by the thermal response factor at time t(2n – 1). Pavg is The method is similar to 3C and the procedure is
determined by averaging the power pulses from time of identical. Pavg is calculated from Equation 1–10 modified
application to the time when the last pulse starts. by r(t2n – 1) and substituted into equation 1–6, i.e.,

Applicable Equations:

General: Pavg =
+1
i
ȍ
n
Pi
t(2i–1)–t(2i–2)
t(2n)–t(2i–2)
(1–10)
Tn + 1 = [Pavg r(t2n–1) + (PD – Pave) r(t2n–1 –
Tn + 1 = t2n–2) + PD r(t2n+1 – t2n) – PD r(t2n+1
Tn + 1 = – t2n–1)] RθJC

For 3 Pulses:
The previous example cannot be worked out for the n + 1
t1 – t0 t3 – t2
Pavg = P1 + P2 (1–11) pulse because only 3 pulses are present.
t4 – t0 t4 – t2

Example: Conditions are shown on Figure 8.4 (refer to

Method 1A). Table 8.2. Summary Of Numerical Solution For The
Procedure: Find Pavg from equation 1–3 and the junction Repetitive Pulse Train Of Figure 5
temperature rise from equation 1–4. Temperature Obtained, °C
Conditions: Figure 8.4
Temperature Pulse by Average Power Average Power

@
Desired Pulse Nth Pulse N + 1 Pulse
Pavg = 40 0.1 20 1
3.3 3
)
1.21 6.67 + ) At End of 70.0 (1B) 77 (3A) 70.8 (3B)
= 7.88 Watts 5th Pulse

@
T3 = [Pavg r(t5) + (P3 – Pavg) r(t5 – t4)] RθJC Steady State – 86.9 (2A) 80.9 (2B)
= [7.88 (0.28) + (30 – 7.88) 0.07] 35 Peak
= [2.21 + 1.56] 35 = 132°C Note: Number in parenthesis is method used.

1.0
0.7
r (t) , Transient Thermal Resistance

0.5
0.3
0.2
(Normalized)

0.1
0.07
0.05
0.03
0.02

0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
t, Time (ms)

Figure 8.9. 2N3467 Transient Thermal Response

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 1.0
0.7
r (t) , Transient Thermal Resistance 0.5
0.3
(Normalized)

0.2

0.1
0.07 Case 221 DIE SIZE
1 (Sq. Mils) DEVICE TYPE
0.05 Case 77
0.03 1 8,100 MCR106–6
2
2 16,900 2N6344
0.02

0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 2000 5000 10,000
t, Time (ms)
Figure 8.10. Case 77 and TO–220 Thermal Response

1.0
0.7
r (t) , Transient Thermal Resistance

0.5
0.3
0.2
(Normalized)

0.1
0.07
0.05
0.03
0.02

0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 2000 5000 10,000
t, Time (ms)
Figure 8.11. TO–92 Thermal Response, Applies to All Commonly Used Die

As the price of semiconductor devices decreases, reli- Given:

ability and quality have become increasingly important in Purchase = 100,000 components @ 15¢ each
selecting a vendor. In many cases these considerations even Assumptions: Line Fallout = 0.1%
outweigh price, delivery and service. Assumptions: Warranty Failures = 0.01%
The reason is that the cost of device fallout and warranty Components Cost =100,000 
15¢ = $15,000
repairs can easily equal or exceed the original cost of the Line Fallout Cost = 100 $40 = 4,000
devices. Consider the example shown in Figure 8.12. @ $40 per repair
Although the case is simplistic, the prices and costs are Warranty Cost = 10 
$200 = 2,000
realistic by today’s standards. In this case, the cost of @ $200 per repair
failures raised the device cost from 15 cents to 21 cents, an $21,000
Adjusted Cost
increase of 40%. Clearly, then, investing in quality and
reliability can pay big dividends. Per Component = $21,000
100,000 = 21¢
With nearly three decades of experience as a major Definitions:
semiconductor supplier, ON Semiconductor is one of the Line Fall out = Module or subassembly failure
largest manufacturers of discrete semiconductors in the requiring troubleshooting, parts
world today. Since semiconductor prices are strongly replacement and retesting
influenced by manufacturing volume, this leadership has Warranty Failure = System field failure requir-
permitted ON Semiconductor to be strongly competitive in ing in warranty repair
the marketplace while making massive investments in
Figure 8.12. Component Costs to the User
equipment, processes and procedures to guarantee that the (Including Line Fallout and Warranty Costs)
company’s after–purchase costs will be among the lowest
in the industry.

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 Quality and reliability are two essential elements in order RELIABILITY MECHANICS
for a semiconductor company to be successful in the Since reliability evaluations usually involve only sam-
marketplace today. Quality and reliability are interrelated ples of an entire population of devices, the concept of the
because reliability is quality extended over the expected central limit theorem applies and a failure rate is calculated
life of the product. using the λ2 distribution through the equation:
Quality is the assurance that a product will fulfill
λ≤ l2 (a, 2r
2) )
customers’ expectations. 2 nt
Reliability is the probability that a product will perform λ2 = chi squared distribution
its intended function satisfactorily for a prescribed life
under certain stated conditions. where a + 100100– cl
The quality and reliability of ON Semiconductor thyris- λ = Failure rate
tors are achieved with a four step program:
cl = Confidence limit in percent
r = Number of rejects
1. Thoroughly tested designs and materials n = Number of devices
2. Stringent in–process controls and inspections t = Duration of tests
3. Process average testing along with 100% quality assur-
ance redundant testing
The confidence limit is the degree of conservatism
4. Reliability verifications through audits and reliability
desired in the calculation. The central limit theorem states
studies
that the values of any sample of units out of a large
population will produce a normal distribution. A 50%
confidence limit is termed the best estimate, and is the
ESSENTIALS OF RELIABILITY
mean of this distribution. A 90% confidence limit is a very
Paramount in the mind of every semiconductor user is
conservative value and results in a higher λ which
the question of device performance versus time. After the
represents the point at which 90% of the area of the
applicability of a particular device has been established, its
distribution is to the left of that value (Figure 8.14).
effectiveness depends on the length of trouble free service
it can offer. The reliability of a device is exactly that — an
expression of how well it will serve the customer. 50% CL
Reliability can be redefined as the probability of failure X
FREQUENCY

free performance, under a given manufacturer’s specifica-

tions, for a given period of time. The failure rate of 90% CL
semiconductors in general, when plotted versus a long
period of time, exhibit what has been called the “bath tub
curve” (Figure 8.13).
l, FAILURE RATE
Figure 8.14. Confidence Limits and the Distribution
of Sample Failure Rates

INFANT RANDOM FAILURE WEAROUT

MORTALITY MECHANISM PHENOMENON The term (2r + 2) is called the degrees of freedom and is
an expression of the number of rejects in a form suitable to
FAILURE RATE

λ2 tables. The number of rejects is a critical factor since the

definition of rejects often differs between manufacturers.
Due to the increasing chance of a test not being representa-
tive of the entire population as sample size and test time are
decreased, the λ2 calculation produces surprisingly high
values of λ for short test durations even though the true
long term failure rate may be quite low. For this reason
relatively large amounts of data must be gathered to
demonstrate the real long term failure rate. Since this
Figure 8.13. Failure Rate of Semiconductor
would require years of testing on thousands of devices,
methods of accelerated testing have been developed.

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 Years of semiconductor device testing have shown that
temperature will accelerate failures and that this behavior
fits the form of the Arrhenius equation:
R(t) = Ro(t)e– o/KT
Where R(t) = reaction rate as a function of time and
temperature
Ro = A constant
t = Time
T = Absolute temperature, °Kelvin (°C + 273°)
o = Activation energy in electron volts (ev)

K = Boltzman’s constant = 8.62 10–5 ev/°K
This equation can also be put in the form:
AF = Acceleration factor
T2 = User temperature
T1 = Actual test temperature
The Arrhenius equation states that reaction rate increases
exponentially with the temperature. This produces a
straight line when plotted on log–linear paper with a slope
expressed by o. o may be physically interpreted as the
energy threshold of a particular reaction or failure mecha-
nism. The overall activation energy exhibited by
ON Semiconductor thyristors is 1 ev.
RELIABILITY QUALIFICATIONS/EVALUATIONS
OUTLINE:
Some of the functions of ON Semiconductor Reliability
and Quality Assurance Engineering are to evaluate new
products for introduction, process changes (whether minor
or major), and product line updates to verify the integrity
and reliability of conformance, thereby ensuring satisfacto-
ry performance in the field. The reliability evaluations may
be subjected to a series of extensive reliability testing, such
as in the tests performed section, or special tests, depending
on the nature of the qualification requirement.
AVERAGE OUTGOING QUALITY (AOQ)
With the industry trend to average outgoing qualities
(AOQ) of less than 100 PPM, the role of device final test,
and final outgoing quality assurance have become a key
ingredient to success. At ON Semiconductor, all parts are
100% tested to process average limits then the yields are
monitored closely by product engineers, and abnormal
areas of fallout are held for engineering investigation.
ON Semiconductor also 100% redundant tests all dc
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parameters again after marking the device to further reduce
any mixing problems associated with the first test. Prior to
shipping, the parts are again sampled, tested to a tight
sampling plan by our Quality Assurance department, and
finally our outgoing final inspection checks for correct
paperwork, mixed product, visual and mechanical inspec-
tions prior to packaging to the customers.
AVERAGE OUTGOING QUALITY (AOQ)
AOQ = Process Average 
Probability of Acceptance 
106 (PPM)
Process Average + No.
No. of Reject Devices
of Devices Tested
Probability of Acceptance + (1– No. of Lots Rejected
No. of Lots Tested
)
106 = To Convert to Parts Per Million
AOQ + No.
No. of Reject Devices
of Devices Tested
No. of Lots Rejected
(1 – ) 106(PPM)
No. of Lots Tested
THYRISTOR RELIABILITY
The reliability data described herein applies to
ON Semiconductor’s extensive offering of thyristor prod-
ucts for low and medium current applications. The line
includes not only the pervasive Silicon Controlled Rectifi-
ers (SCRs) and TRIACs, but also a variety of Program-
mable Unijunction Transistors (PUTs), SIDACs and other
associated devices used for SCR and TRIAC triggering
purposes. Moreover, these devices are available in different
package styles with overlapping current ranges to provide
an integral chip–and–package structure that yields lowest
cost, consistent with the overriding consideration of high
reliability.
Some of the various packages and the range of electrical
specifications associated with the resultant products are
shown in Figure 8.15.
To evaluate the reliability of these structures, production
line samples from each type of package are being subjected
to a battery of accelerated reliability tests deliberately
designed to induce long–term failure. Though the tests are
being conducted on a continuing basis, the results so far are
both meaningful and impressive. They are detailed on the
following pages in the hope that they will provide for the
readers a greater awareness of the potential for thyristors in
their individual application.
 These improvements are directed towards long–term
TO–92
reliability in the most strenuous applications and the most
Case 029/TO–226AA adverse environments.
Devices Available:
SCRs, TRIACs, PUTs
DIE GLASSIVATION
Current Range: to 0.8 A
Voltage Range: 30 to 600 V All ON Semiconductor thyristor die are glass–sealed
with an ON Semiconductor patented passivation process
making the sensitive junctions impervious to moisture and
impurity penetration. This imparts to low–cost plastic
devices the same freedom from external contamination
TO–225AA formerly associated only with hermetically sealed metal
Case 077/TO–126
Devices Available:
packages. Thus, metal encapsulation is required primarily
SCRs, TRIACs for higher current devices that would normally exceed the
Current Range: to 4 A power–dissipation capabilities of plastic packages — or for
Voltage Range: 200 to 600 V
applications that specify the hermetic package.

VOID–FREE PLASTIC ENCAPSULATION

Case 267/Axial Lead
(Surmetic 50)
Devices Available:
SIDAC
Voltage Range: 120 to 240 V
A fifth generation plastic package material, combined
with improved copper piece–part designs, maximize pack-
age integrity during thermal stresses. The void–free
encapsulation process imparts to the plastic package a
mechanical reliability (ability to withstand shock and
vibration) even beyond that of metal packaged devices.

IN–PROCESS CONTROLS AND INSPECTIONS

INCOMING INSPECTIONS
Apparently routine procedures, inspection of incoming
parts and materials, are actually among the most critical
segments of the quality and reliability assurance program.
That’s because small deviations from materials specifica-
TO–220AB tions can traverse the entire production cycle before being
Case 221A
Devices Available:
detected by outgoing Quality Control, and, if undetected,
SCRs, TRIACs could affect long–term reliability. At ON Semiconductor,
Current Range: to 55 A piece–part control involves the services of three separate
Voltage Range: 50 to 800 V
laboratories . . . Radiology, Electron Optics and Product
Analysis. All three are utilized to insure product integrity:
Raw Wafer Quality, in terms of defects, orientation,
flatness and resistivity;
Figure 8.15. Examples of ON Semiconductor’s
Physical Dimensions, to tightly specified tolerances;
Thyristor Packages
Metal Hardness, to highly controlled limits;
Gaseous Purity and Doping Level;
Mold Compounds, for void–free plastic encapsulation.
THYRISTOR CONSTRUCTION THROUGH A
IN–PROCESS INSPECTIONS
TIME TESTED DESIGN AND ADVANCED
As illustrated in Figure 8.16, every major manufacturing
PROCESSING METHODS
step is followed by an appropriate in–process QA inspec-
A pioneer in discrete semiconductor components tion. Quality control in wafer processing, assembly and
and one of the world’s largest suppliers thereof, final test impart to ON Semiconductor standard thyristors a
ON Semiconductor has pyramided continual process and reliability level that easily exceeds most industrial, con-
material improvements into thyristor products whose sumer and military requirements . . . built–in quality
inherent reliability meets the most critical requirements of assurance aimed at insuring failure–free shipments of
the market. ON Semiconductor products.

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RELIABILITY AUDITS
Reliability audits are performed following assembly.
Reliability audits are used to detect process shifts which
can have an adverse effect on long–term reliability.
Extreme stress testing on a real–time basis, for each
product run, uncovers process abnormalities that may have
escaped the stringent in–process controls. Typical tests
include HTRB/FB (high–temperature reverse bias and
forward bias) storage life and temperature cycling. When
abnormalities are detected, steps are taken to correct the
process.
OUTGOING QC
The most stringent in–process controls do not guarantee
strict adherence to tight electrical specifications.
ON Semiconductor’s 100% electrical parametric test does
— by eliminating all devices that do not conform to the
specified characteristics. Additional parametric tests, on a
sampling basis, provide data for continued improvement of
product quality. And to help insure safe arrival after
shipment, antistatic handling and packaging methods are
employed to assure that the product quality that has been
built in stays that way.
From rigid incoming inspection of piece parts and
materials to stringent outgoing quality verification, assem-
bly and process controls encompass an elaborate system of
test and inspection stations that ensure step–by–step
adherence to a prescribed procedure designed to yield a
high standard of quality.

IN– DIFFUSION, METALLIZATION,

COMING MOAT ETCH, RESIS– 100% DIE ELECT, TESTS ELEC.
INSP. PHOTOGLASS TIVITY SCRIBE & BREAK & VISUAL
WAFER & INSPECTION INSPECTION
CHEMICALS

INC.
INSP. LEAD
FORM & DIE BOND QA QA
ATTACHMENT
CLEAN INSPECTION INSPECTION
PC. PARTS
QA INSPECTION

100% ELECT.
INJECTION MOLD SELECTION, 100% 100%
& DEFLASH PLASTIC, BIN SPECIFICATION ANTISTATIC
CLEAN & SOLDER RELIA– TEST, 100% QA OUTGOING HANDLING/PACKAGING
DIP LEADS, BILITY INSPECTION QC
CURE PLASTIC AUDITS LASER MARKING SAMPLING

FINAL
VISUAL SHIPPING
&
MECHANICAL

Figure 8.16. In–Process Quality Assurance Inspection Points for Thyristors

RELIABILITY TESTS But thorough testing, in conjunction with rigorous statisti-

Only actual use of millions of devices, under a thousand
different operating conditions, can conclusively establish
the reliability of devices under the extremes of time,
temperature, humidity, shock, vibration and the myriads of
other adverse variables likely to be encountered in practice.
cal analysis, is the next–best thing. The series of torture
tests described in this document instills a high confidence
level regarding thyristor reliability. The tests are conducted
at maximum device ratings and are designed to deliberately
stress the devices in their most susceptible failure models.
The severity of the tests compresses into a relatively short

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test cycle the equivalent of the stresses encountered during Table 8.4. Leakage–Current Drift
years of operation under more normal conditions. The after 1000 Hours HTRB
results not only indicate the degree of reliability in terms of
anticipated failures; they trigger subsequent investigations VDRM = 400 V
into failure modes and failure mechanisms that serve as the
basis of continual improvements. And they represent a
clear–cut endorsement that, for ON Semiconductor thyris- TA = 100°C
tors, low–cost and high quality are compatible attributes.

BLOCKING LIFE TEST

This test is used as an indicator of long–term operating

reliability and overall junction stability (quality). All
semiconductor junctions exhibit some leakage current
under reverse–bias conditions. Thyristors, in addition,
exhibit leakage current under forward–bias conditions in
the off state. As a normal property of semiconductors, this –40 µA –20 µA 0 +20 µA +40 µA
junction leakage current increases proportionally with Leakage Shift from Initial Value
temperature in a very predictable fashion. The favorable blocking–life–test drift results shown here are attributed to
Leakage current can also change as a function of time — ON Semiconductor’s unique “glassivated junction” process which imparts a
particularly under high–temperature operation. Moreover, high degree of stability to the devices.

this undesirable “drift” can produce catastrophic failures

when devices are operated at, or in excess of, rated
HIGH TEMPERATURE STORAGE LIFE TEST
temperature limits for prolonged periods.
The blocking life test operates representative numbers of This test consists of placing devices in a high–tempera-
devices at rated (high) temperature and reverse–bias ture chamber. Devices are tested electrically prior to
voltage limits to define device quality (as measured by exposure to the high temperature, at various time intervals
leakage drifts) and reliability (as indicated by the number during the test, and at the completion of testing. Electrical
of catastrophic failures*). The results of these tests are readout results indicate the stability of the devices, their
shown in Table 8.3. Table 8.4 shows leakage–current drift potential to withstand high temperatures, and the internal
after 1000 hours HTRB. manufacturing integrity of the package. Readouts at the
various intervals offer information as to the time period in
which failures occur. Although devices are not exposed to
such extreme high temperatures in the field, the purpose of
this test is to accelerate any failure mechanisms that could
occur during long periods at actual storage temperatures.
Table 8.3. Blocking Life Test Results of this test are shown in Table 8.5.
High Temperature Reverse Bias (HTRB)
and High Temperature Forward Bias (HTFB)
Table 8.5. High Temperature Storage Life
Test
Conditions Total Cata- Total Cata-
Sample Duration Test Sample Duration
Case TA Device strophic Case Device strophic
Size (Hours) Conditions Size (Hours)
@ Rated Hours Failures* Hours Failures*
Voltage
Case 029/TO–226AA TA = 150°C 1000- 400 1,500,000 0
Case 029/TO–226AA 100°C 1000 1000 1,000,000 1 (TO–92) 2000
(TO–92)
Case 077/TO–225AA ** 1000- 350 550,000 0
Case 077/TO–225AA 110°C 1000 1000 1,000,000 0 (TO–126) 2000
(TO–126)
Case 221A/TO–220 1000 300 300,000 0
Case 221A/TO–220AB 100°C 1000 1000 1,000,000 0
Case 267/Axial Lead 1000 100 100,000 0
Case 267/Axial Lead 125°C 150 1000 150,000 0 (Surmetic 50)
(Surmetic 50)
* Failures are at maximum rated values. The severe nature of these tests
* Failures are at maximum rated values. The severe nature of these tests is normally not seen under actual conditions.
is normally not seen under actual conditions. ** Same for all.

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STRESS TESTING — POWER CYCLING AND THERMAL SHOCK
THERMAL SHOCK CONDITIONS BEYOND THE NORM

POWER CYCLING TEST

How do the devices hold up when they are repeatedly
cycled from the off state to the on state and back to the off
state under conditions that force them to maximum rated
junction temperature during each cycle? The Power
Cycling Test was devised to provide the answers.
In this test, devices are subjected to intermittent operat-
ing file (IOL), on–state power until the junction tempera-
ture (TJ) has increased to 100°C. The devices are then
turned off and TJ decreases to near ambient, at which time
the cycle is repeated.
This test is important to determine the integrity of the chip
and lead frame assembly since it repeatedly stresses the
devices. It is unlikely that these worst–case conditions would
be continuously encountered in actual use. Any reduction in
TJ results in an exponential increase in operating longevity.
Table 8.6 shows the results of IOL testing.
Excesses in temperature not only cause variations in
electrical characteristics, they can raise havoc with the
mechanical system. Under temperature extremes, contrac-
tion and expansion of the chip and package can cause
physical dislocations of mechanical interfaces and induce
catastrophic failure.
To evaluate the integrity of ON Semiconductor thyristors
under the most adverse temperature conditions, they are
subjected to thermal shock testing.
AIR–TO–AIR (TEMPERATURE CYCLING)
This thermal shock test is conducted to determine the
ability of the devices to withstand exposure to extreme high
and low temperature environments and to the shock of
alternate exposures to the temperature extremes. Results of
this test are shown in Table 8.6.

Table 8.6. Air–to–Air

Total
Sample Number Catastrophic
Case Test Conditions Device
Size of cycles Failures*
Cycles
Case 029/TO–226AA (TO–92) –40°C or –65°C 900 400 360,000 0
Case 077/TO–225AA (TO–126) to +150°C 500 400 200,000 0
D ll 15 minutes
Dwell—15 i t att each
h extreme
t
Case 221A/TO–220 400 400 160,000 0
Immediate Transfer
Case 267/Axial Lead (Surmetic 50) 100 400 40,000 0

* Failures are at maximum rated values. The severe nature of these tests is normally not seen under actual conditions.

ENVIRONMENTAL TESTING the use of a unique junction “glassivation” process and

MOISTURE TESTS
Humidity has been a traditional enemy of semiconduc-
tors, particularly plastic packaged devices. Most moisture–
related degradations result, directly or indirectly, from
penetration of moisture vapor through passivating materi-
als, and from surface corrosion. At ON Semiconductor, this
erstwhile problem has been effectively controlled through
selection of package materials. The resistance to moisture–
related failures is indicated by the tests described here.
BIASED HUMIDITY TEST
This test was devised to determine the resistance of
component parts and constituent materials to the combined
deteriorative effects of prolonged operation in a high–tem-
perature/high–humidity environment. H3TRB test results
are shown in Table 8.7.

Table 8.7. Biased Humidity Test

High Humidity, High Temperature, Reverse Bias (H3TRB)
Total
Sample Duration Catastrophic
Case Test Conditions Device
Size Hours Failures*
Cycles
Case 029/TO–226AA Relative Humidity 85% 400 500–1000 300,000 0
(TO–92) TA = 85°C

Case 077/TO–225AA Reverse Voltage–Rated 200 500–1000 150,000 0

or 200 V Maximum
Case 221A/TO–220 100 500–1000 75,000 0
Case 267/Axial Lead (Surmetic 50) 30 1000 30,000 0

* Failures are at maximum rated values. The severe nature of these tests is normally not seen under actual conditions.

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 SECTION 9
APPENDICES
APPENDIX I
USING THE TWO TRANSISTOR ANALYSIS

DEFINITIONS: Equation (3) relates IA to IG, and note that as α1 + α2 = 1,

IC5 Collector current IA goes to infinity. IA can be put in terms of IK and α’s as
IB5 Base current follows:
ICS 5 Collector leakage current IB1 = IC2
(saturation component)
IA 5 Anode current
Combining equations (1) and (2):
IK 5 Cathode current + ICS1 ) ICS2
α 5 Current amplification factor
IA
I
IG 5 Gate current
1 – a1 – ( K) a2
IA
The subscript “i” indicates the IA — ∞ if denominator approaches zero, i.e., if
appropriate transistor.
IK
IA
+
1 – a1
a2

Note that just prior to turn–on there is a majority carrier

build–up in the P2 “base.” If the gate bias is small there will
FOR TRANSISTOR #1: actually be hole current flowing out from P2 into the gate
IC1 = α1 IA + ICSI circuit so that IG is negative, IK = IA + IG is less than IA so:
(see Figure 3.2 for the directions of current components)
and
IK
IB1 = IA – IC1 < 1 which corresponds to α1 + α2 > 1
IA
Combining these equations,
IB1 = (1 – α1) IA – ICS1 (1) A
IA

P1 IB1
DEVICE #1 N1 IC2
P2
N1
LIKEWISE, FOR TRANSISTOR #2 IC1
IC2 = α2IK + ICS2 (2) G N2 DEVICE #2
IG IB2 P2
IB1 = IC2
IK
and by combining Equations (1) and
(2) and substituting IK = IA + IG, it
is found that K

IA+ ) )
a2IG ICS1 ICS2
(3) Figure 9.1. Schematic Diagram of the Two Transistor
1 – a1 – a2 Model of a Thyristor

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 APPENDIX II
CHARGE AND PULSE WIDTH

In the region of large pulse widths using current Assume life time at the temperature range of operation
triggering, where transit time effects are not a factor, we increases as some power of temperature
can consider the input gate charge for triggering, Qin, as τ1 = KTm (5)
consisting of three components:
1. Triggering charge Qtr, assumed to be constant.
where K and m are positive real numbers. Combining
2. Charge lost in recombination, Qr, during current
Equations (4) and (5), we can get the slope of Qin with
regeneration prior to turn–on.
respect to temperature to be
3. Charge drained, Qdr, which is by–passed through the
built–in gate cathode shunt resistance (the presence of
slope + dQdTin + – m(Qtr ) VRGCs ) t
t exp.
ń
t t1
(6)
this shunting resistance is required to increase the dv/dt t1 T
capability of the device).
Mathematically, we have In reality, Qtr is not independent of temperature, in which
Qin = Qtr + Qdr + Qr = IGτ (1) case the Equation (6) must be modified by adding an
additional term to become:
Qr is assumed to be proportional to Qin; to be exact,
slope + – m(Qtr ) VRGCs )t
t exp.
ń )dQtr
t t1
ń
expt t1 (7)
Qr = Qin (1 – exp–τ/τ1) (2) t1 T dT
where IG = gate current, Physically, not only does Qtr decrease with temperature
τ = pulse width of gate current, so that dQtr/dT is a negative number, but also |dQtr/dTI
τ1 = effective life time of minority carriers in the decreased with temperature as does |dα/dTI in the tempera-
bases ture range of interest.

The voltage across the gate to cathode P–N junction during Equation (6) [or (7)] indicates two things:
forward bias is given by VGK (usually 0.6 V for silicon).* 1. The rate of change of input trigger charge decreases as
The gate shunt resistance is Rs (for the MCR729, typically temperature (life time) increases.
100 ohms), so the drained charge can be expressed by 2. The larger the pulse width of gate trigger current, the

Qdr + VRGCs t (3)

faster the rate of change of Qin with respect to change
in temperature. Figure 3.11 shows these trends.
Combining equations (1), (2), and (3), we get

Qin + IG + (Qtr ) VRGCs

t t) exp. ń
t t1 (4)
*VGC is not independent of IG. For example, for the
Note that at region A and C of Figure 3.3(c) Qin has an MCR729 the saturation VGC is typically 1 V, but at lower
increasing trend with pulse width as qualitatively described IG’s the VGC is also smaller, e.g. for IG = 5 mA, VGC is
by Equation (4). typically 0.3 V.

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 APPENDIX III
TTL SOA TEST CIRCUIT

Using the illustrated test circuit, the two TTL packages
(quad, 2–input NAND gates) to be tested were powered by
the simple, series regulator that is periodically shorted by
the clamp transistor, Q2, at 10% duty cycle rate. By
varying the input to the regulator V1 and the clamp pulse
width, various power levels can be supplied to the TTL
load. Thus, as an example, VCC could be at 5 V for 90 ms
and 10 V for 10 ms, simulating a transient on the bus or a
possibly shorted power supply pass transistor for that
duration. These energy levels are progressively increased
until the gate (or gates) fail, as detected by the status of the
output LEDs, the voltage and current waveforms and the
device case temperature.

VCC
MJE220 LED
V1 VCC 1k 300
Q1
220 5.6 V V1 1k V2 = 10 V 220
2N3904 1A
2W 1W 2A
10 k VCC
100 µF G4 Q4 VCC
G3
10 V LED
1N4739 1N5240 0.1 µF
10 M 3.9 M 10 k 300
220
Q2 1D
MJE230 2D
MC14011

1k
[
SQUARE WAVE GENERATOR
f 1 Hz (2) MC7400
DUT
470
V2 V2

10 k
2N3904 Q3 G1 T1 T2
G2

10 k 10 k 100 k
5 ms < T2 < 250 ms
50 ms < T2 < 1.9 s
0.47 µF
2.2 M
500 k 5M
1N914 1N914

10% DUTY CYCLE GENERATOR

Figure 9.2. TTL SOA Test Circuit

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 APPENDIX IV
SCR CROWBAR LIFE TESTING

This crowbar life test fixture can simultaneously test ten
SCRs under various crowbar energy and gate drive
conditions and works as follows.
The CMOS Astable M.V. (Gates 1 and 2) generate an
asymmetric Gate 2 output of about ten seconds high, one
second low. This pulse is amplified by Darlington Q22 to
turn on the capacitor charging transistors Q1–Q10 for the
ten seconds. The capacitors for crowbarring are thus
charged in about four seconds to whatever power supply
voltage to which VCC1 is set. The charging transistors are
then turned off for one second and the SCRs are fired by an
approximately 100 µs delayed trigger derived from Gates 3
and 4. The R–C network on Gate 3 input integrates the
complementary pulse from Gate 1, resulting in the delay,
thus insuring non–coincident firing of the test circuit. The
shaped pulse out of Gate 4 is differentiated and the
positive–going pulse is amplified by Q21 and the following
ten SCR gate drivers (Q11–Q20) to form the approximate 2
ms wide, 1 µs rise time, SCR gate triggers, IGT. IGT is set
by the collector resistors of the respective gate drivers and
the supply voltage, VCC2; thus, for IGT ≈ 100 mA, VCC2 ≈
30 V, etc.
The LEDs across the storage capacitors show the state of
the voltage on the capacitors and help determine whether
the circuit is functioning properly. The timing sequence
would be an off LED for the one–second capacitor dump
period followed by an increasingly brighter LED during
the capacitor charge time. Monitoring the current of VCC1
will also indicate proper operation.
The fixture’s maximum energy limits are set by the
working voltage of the capacitors and breakdown voltage
of the transistors. For this illustration, the 60 V, 8400 µF
capacitors (ESR ≈ 20 mΩ) produced a peak current of
about 2500 A lasting for about 0.5 ms when VCC1 equals
60 V. Other energy values (lower ipk, greater tw) can be
obtained by placing a current limiting resistor between the
positive side of the capacitor and the crowbar SCR anode.

VDD
+ 15 V
0.1 µF 10 k
Q21
100 k 4
3
MJE803
VSS 1N914
0.001 µF

MC14011B VCC1
470 VCC2
+15 V 2.2 k MJE250
+15 V
2W
Q1
1 10 k MJE250
2 Q22
470
2.2 k 100
VCC1 R1
2W 5W Q11
470 2.7 k 2.2 k
22 M 22 M 2.2 M
MJE803 1W 8400 µF
1N914 C1 270
2.2 k Q10
2W
0.47 µF MJE250 DUT #1
100
2.7 k VCC2
5W
1W 470
8400 µF MJE250
(10) LED C10 2.2 k
Q20

270
DUT #10

Figure 9.3. Schematic for SCR Crowbar Life Test

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 APPENDIX V APPENDIX VI

DERIVATION OF THE RMS CURRENT DERIVATION OF I2t FOR VARIOUS TIMES

OF AN EXPONENTIALLY DECAYING
CURRENT WAVEFORM

Thermal Equation ∆t = Z(θ)PD

i = Ipke–t/τ where Z(θ) = r(t)RθJC
Ipk
and r(t) = K t Ǹ

Ǹŕ
T=5τ Therefore, for the same ∆t,

Dt + K Ǹt1 RqJCPD + K Ǹt2 RqJC PD 2,

Ǹ
1
+
T
1 i2(t)dt
+ + II12RR ,
Irms PD 2
t2

ŕ
T 0 1

ń
PD

Ǹ
t1 2
12 2
+ 1
T
ń 2
(I e–t t)2dt
T 0 pk I1
I22
+ t2

ń
t1
1 2

+ ń
Ipk2 e–2t t T
ń
ǒ Ǔ ń +ǒ Ǔ ń
Multiplying both sides by (t1/t2),
T (–2 t)

ǒǓ
2
+ t2 1 2 t1 t1 1 2
0 I1 t1
ń
Ǹ
,
1 2 I22t2 t1 t2 t2
+ Ipk2 –t
(e–2T ń t – e0)
T 2
I12t1 + I22t2 t1
t2
where T = 5τ,
1 2 ń
+ –
Ipk2
10
(e–10 – 1)

Irms + ǸIpk10 + 0.316 Ipk

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 APPENDIX VII
THERMAL RESISTANCE CONCEPTS

The basic equation for heat transfer under steady–state
conditions is generally written as:
q = hA∆T (1)
where q = rate of heat transfer or power dissipation (PD),
h = heat transfer coefficient,
A = area involved in heat transfer,
∆T = temperature difference between regions of
heat transfer.
However, electrical engineers generally find it easier to
work in terms of thermal resistance, defined as the ratio of
temperature to power. From Equation (1), thermal resis-
tance, Rθ, is
Rθ = ∆T/q = 1/hA (2)
The coefficient (h) depends upon the heat transfer mecha-
nism used and various factors involved in that particular
mechanism.
An analogy between Equation (2) and Ohm’s Law is
often made to form models of heat flow. Note that ∆T could
be thought of as a voltage; thermal resistance corresponds
to electrical resistance (R); and, power (q) is analogous to
current (l). This gives rise to a basic thermal resistance
model for a semiconductor (indicated by Figure 9.4).
The equivalent electrical circuit may be analyzed by
using Kirchoff’s Law and the following equation results:
TJ = PD(RθJC + RθCS + RθSA) + TA (3)
where TJ = junction temperature,
PD = power dissipation,
RθJC = semiconductor thermal resistance
(junction to case),
RθCS = interface thermal resistance
(case to heat sink),
RθSA = heat sink thermal resistance
(heat sink to ambient),
TA = ambient temperature.
The thermal resistance junction to ambient is the sum of
the individual components. Each component must be
minimized if the lowest junction temperature is to result.
The value for the interface thermal resistance, RθCS, is
affected by the mounting procedure and may be significant
compared to the other thermal–resistance terms.
The thermal resistance of the heat sink is not constant; it
decreases as ambient temperature increases and is affected
by orientation of the sink. The thermal resistance of the
semiconductor is also variable; it is a function of biasing
and temperature. In some applications such as in RF power
amplifiers and short–pulse applications, the concept may
be invalid because of localized heating in the semiconduc-
tor chip.
TJ, JUNCTION TEMPERATURE
RθJC
PD
TC, CASE TEMPERATURE
RθCS
TS, HEAT SINK
TEMPERATURE
RθSA
TA, AMBIENT
TEMPERATURE
REFERENCE TEMPERATURE
Figure 9.4. Basic Thermal Resistance
Model Showing Thermal to Electrical
Analogy for a Semiconductor

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 APPENDIX VIII
DERIVATION OF RFI DESIGN EQUATIONS

df where:
The relationship of flux to voltage and time is E = N
dt N is total turns
or E = NAc dB since φ = BAc and Ac is a constant. Erms is line voltage

ŕ
dt
Rearranging this equation and integrating we get:
E dt = NAc (B2 – B1) = NAc ∆ B
which says that the volt–second integral required deter-
mines the size of the core. In an L–R circuit such as we
have with a thyristor control circuit, the volt–second
characteristic is the area under an exponential decay. A
tr is allowable current rise time in seconds
BMAX is maximum usable flux density of core material
Ac is usable core area in square inches
Window area necessary is:
(1)
Aw = N Awire 3  (4)
The factor of 3 is an approximation which allows for
insulation and winding space not occupied by wire.
Substituting equation (3) in (4):

+ 10.93BEMAX
conservative estimate of the area under the curve may be 106
Aw rms tr Awire 3
obtained by considering a triangle whose height is the peak Ac
line voltage and the base is the allowable switching time.
Eptr (The factor 10.93 may be rounded to 11 since two
The area is then 1/2 bh or . significant digits are all that are necessary.)
2
Substituting in Equation (1):
The factor AcAw can easily be found for most cores and is
Eptr
2
+ N Ac D B (2)
an easy method for selecting a core.

where: Ac Aw + 33 ErmsBtMAX
rAwire 106

Ep is the peak line voltage

tr is the allowable current rise time In this equation, the core area is in in2. To work with
N is the number of turns on the coil
Ac is the usable core area in cm2

circular mils, multiply by 0.78 10–6 so that:
∆ B is the maximum usable flux density of the core
material in W/m2
Ac Aw + 26 Erms
BMAX
trAwire

Rewriting Equation (2) to change ∆B from W/m2 to gauss,

Ǹ
substituting 2 Erms for Ep and solving for N, we get:
where Awire is the wire area in circular mils.
Inductance of an iron core inductor is

N + Ǹ22 AEcrmsD Btr 108 + 0.707BEMAX

rms tr 108
L + 3.19 N2 A1cc 10–8
Ig ) m
Ac

Ac in this equation is in cm2. To change to in2, multiply Ac

by 6.452. Then: Rearranging terms,

N + 10.93BMAX
Erms tr 106
Ac
(3)
Ig + 3.19 N LAc 10
2 –8 1
– mc

APPENDIX IX

BIBLIOGRAPHY ON RFI
Electronic Transformers and Circuits, Reuben Lee, John Wiley and Sons, Inc., New York, 1955.
Electrical Interference, Rocco F. Ficchi, Hayden Book Company, Inc., New York, 1964.
“Electromagnetic–Interference Control,” Norbert J. Sladek, Electro Technology, November, 1966, p. 85.
“Transmitter–Receiver Pairs in EMI Analysis,” J. H. Vogelman, Electro Technology, November, 1964, p. 54.
“Radio Frequency Interference,” Onan Division of Studebaker Corporation, Minneapolis, Minnesota.
“Interference Control Techniques,” Sprague Electric Company, North Adams, Massachusetts, Technical Paper 62–1, 1962.
“Applying Ferrite Cores to the Design of Power Magnetics,” Ferroxcube Corporation of America, Saugerties, New York, 1966.

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 CHAPTER 2
Selector Guide

In Brief . . .

ON Semiconductor’s broad line of Thyristors includes . . . Page

• A full line of Silicon Controlled Rectifiers (SCR’s) SCRs: Silicon Controlled Rectifiers . . . . . . . . . . . . . . . 249
TRIACs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 252
covering a forward current range of 0.8 to 55 amps
Surge Suppressors and Triggers . . . . . . . . . . . . . . . . . 256
and blocking voltages from 30 volts to 800 volts.
Available in a choice of seven different plastic
packages in both through hole and surface mount, for
space saving requirements.
• An extensive line of Triacs (bidirectional devices)
from 0.6 to 40 amps with blocking voltages from 200
to 800 volts. Like the SCR’s, the Triacs are available
in a choice of seven different plastic packages,
including the UL registered isolated TO–220 package.
• A new line of Thyristor Surge Suppressors in the
surface mount SMB package covering surge currents
of 50 and 100 amps, with break over voltages from
265 to 365 volts.
• Trigger devices, including Sidacs and PUT’s
(Programmable Unijunction Transistors). Trigger
devices are available in both the axial lead and TO–92
packages.
Finally, ON Semiconductor, formerly a division of
Motorola, continues its 30 plus years of leadership in
Thyristor products which has made it a leader in new
product innovations.

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SCRs
Silicon Controlled Rectifiers
Style 4 A

A K
A
G
K Style 5 A
A
G
K G G
G A K A
A K

On–State Blocking Surge Data

RMS Voltage TO–92(1) TO–225AA Current Sheet
Current VDRM, (TO–226AA) SOT–223 (TO–126) D–PAK ITSM Max Max Page
IT(RMS) VRRM Case 029 Case 318E Case 077 Case 369A (Amps) IGT VGT Number
(Amps) (Volts) Style 10 Style 10 Style 2 Style 4 & 5 60 Hz (mA) (Volts) in Book
0.8 30 2N5060 10 0.2 0.8 258
60 2N5061
100 2N5062
200 2N5064
0.8 100 MCR100–3 10 0.2 0.8 566
200 MCR100–4
400 MCR100–6
600 MCR100–8
0.8 200 MCR08BT1 8.0 0.2 0.8 491
600 MCR08MT1
1.5 400 MCR22–6 15 0.2 0.8 543
600 MCR22–8
4.0 200 C106B 20 0.2 0.8 303
400 C106D
400 C106D1
600 C106M
600 C106M1
4.0 400 MCR106–6 25 0.2 1.0 572
600 MCR106–8
4.0 100 MCR703AT4(2) 25 0.1 0.8 597
200 MCR704AT4(2)
400 MCR706AT4(2)
600 MCR708AT4(2)
4.0 400 MCR716T4(3) 25 0.1 0.8 602
600 MCR718T4(3)
(1) See TO–92 data sheets for complete device suffix packaging ordering options. Lead Identification
RLRA, RLRE, RL, & RL1 suffixes: Radial Tape and Reel A = Anode
RLRM & ZL1 suffixes: Radial Tape and Ammo Pack K = Cathode
(2) Denotes pkg style 5 G = Gate
(3) Denotes pkg style 4
Shaded devices denote sensitive gate SCR’s

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SCRs (continued)
A A

K
A
G
K K K
A A A
G G G ( )
On–State Blocking Surge Data
RMS Voltage Isolated Current Sheet
Current VDRM, D–PAK TO–220AB TO–220AB TO–220 ITSM Max Max Page
IT(RMS) VRRM Case 369A Case 221A–09 Case 221A–07 Case 221C (Amps) IGT VGT Number
(Amps) (Volts) Style 4 Style 3 Style 3 Style 2 60 Hz (mA) (Volts) in Book
8.0 600 MCR8DCMT4 80 15 1.0 499
800 MCR8DCNT4
8.0 400 MCR8SD 80 0.2 1.0 514
600 MCR8SM
800 MCR8SN
8.0 600 MCR8M 80 15 1.0 510
800 MCR8N
8.0 50 C122F1 90 25 1.5 308
200 C122B1
8.0 600 MCR8DSMT4 90 0.2 1.0 504
800 MCR8DSNT4
8.0 100 MCR72–3 100 0.2 1.5 563
400 MCR72–6
600 MCR72–8
8.0 50 MCR218–2 100 25 1.5 575
200 MCR218–4
400 MCR218–6
8.0 400 MCR218–6FP 100 25 1.5 579
800 MCR218–10FP
10 400 MCR12LD 100 8.0 0.8 534
600 MCR12LM
800 MCR12LN
12 600 MCR12DSMT4 100 0.2 1.0 528
800 MCR12DSNT4
12 600 MCR12DCMT4 100 20 1.0 522
800 MCR12DCNT4
12 400 MCR12D 100 20 1.0 518
600 MCR12M
800 MCR12N
12 50 MCR68–2 100 30 1.5 555
UL logo indicates UL Recognized File #E69369 Lead Identification
Shaded devices denote sensitive gate SCR’s A = Anode
K = Cathode
G = Gate

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SCRs (continued)
A A

K K K
A A A ( )
G G G

On–State Blocking Surge Data

RMS Voltage Current Sheet
Current VDRM, TO–220AB TO–220AB Isolated TO–220 ITSM Max Max Page
IT(RMS) VRRM Case 221A–09 Case 221A–07 Case 221C (Amps) IGT VGT Number
(Amps) (Volts) Style 3 Style 3 Style 2 60 Hz (mA) (Volts) in Book
12 50 2N6394 100 30 1.5 288
100 2N6395
400 2N6397
800 2N6399
16 800 MCR16N 160 20 1.0 538
16 50 2N6400 160 30 1.5 293
100 2N6401
200 2N6402
400 2N6403
600 2N6404
800 2N6405
25 400 MCR25D 300 30 1.0 550
600 MCR25M
800 MCR25N
25 50 2N6504 300 30 1.5 298
100 2N6505
400 2N6507
600 2N6508
800 2N6509
25 50 MCR69–2 300 30 1.5 559
100 MCR69–3
25 600 MCR225–8FP 300 40 1.5 584
800 MCR225–10FP
40 200 MCR264–4 400 50 1.5 589
400 MCR264–6
600 MCR264–8
55 200 MCR265–4 550 50 1.5 593
400 MCR265–6
600 MCR265–8
800 MCR265–10
UL logo indicates UL Recognized File #E69369 Lead Identification
A = Anode
K = Cathode
G = Gate

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TRIACs (Bidirectional Devices)
MT2

MT2
MT1
MT2
MT1 G
MT2
MT2 G
MT1 MT1
G G
MT2 MT2 MT1 MT2
G

Max IGT (mA)

On–State Blocking Surge Data
RMS Voltage TO–92(1) TO–225AA Current Sheet
Current VDRM, (TO–226AA) SOT–223 (TO–126) D–PAK ITSM Page
IT(RMS) VRRM Case 029 Case 318E Case 077 Case 369A (Amps) Number
(Amps) (Volts) Style 12 Style 11 Style 5 Style 6 60 Hz Q1 Q2 Q3 Q4 in Book
0.6 600 MAC97–8 8.0 10 10 10 10 425
200 MAC97A4 5.0 5.0 5.0 7.0
400 MAC97A6 5.0 5.0 5.0 7.0
600 MAC97A8 5.0 5.0 5.0 7.0
0.8 400 MAC997A6 8.0 5.0 5.0 5.0 7.0 483
MAC997B6 3.0 3.0 3.0 5.0
600 MAC997A8 5.0 5.0 5.0 7.0
MAC997B8 3.0 3.0 3.0 5.0
0.8 200 MAC08BT1 8.0 10 10 10 10 311
600 MAC08MT1
2.5 200 T2322B 25 10 10 10 10 627
4.0 200 2N6071A 30 5.0 5.0 5.0 10 272
2N6071B 3.0 3.0 3.0 5.0
400 2N6073A 5.0 5.0 5.0 10
2N6073B 3.0 3.0 3.0 5.0
600 2N6075A 5.0 5.0 5.0 10
2N6075B 3.0 3.0 3.0 5.0
4.0 600 MAC4DLMT4(2) 40 3.0 3.0 3.0 5.0 334
MAC4DLM–1(3)
4.0 600 MAC4DHMT4(2) 40 5.0 5.0 5.0 10 328
MAC4DHM–1(3)
4.0 600 MAC4DSMT4(2) 40 10 10 10 – 340
MAC4DSMT–1(3)
800 MAC4DSNT4(2)
MAC4DSN–1(3)
4.0 600 MAC4DCMT4(2) 40 35 35 35 – 320
MAC4DCM–1(3)
800 MAC4DCNT4(2)
MAC4DCN–1(3)
(1) See TO–92 data sheets for complete device suffix packaging ordering options. Lead Identification
RLRA, RLRE, RL, & RL1 suffixes: Radial Tape and Reel MT1 = Main Terminal 1
RLRM & ZL1 suffixes: Radial Tape and Ammo Pack MT2 = Main Terminal 2
(2) Denotes SMT package G = Gate
(3) Denotes straight lead package
Shaded devices denote sensitive gate Triacs

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TRIACs (Bidirectional Devices) (continued)
MT2 MT2

MT1 MT1 MT1

MT2 MT2
G G
MT2
G
( )

Max IGT (mA)

On–State Blocking Surge Data
RMS Voltage Isolated Current Sheet
Current VDRM, TO–220AB TO–220AB TO–220 ITSM Page
IT(RMS) VRRM Case 221A–09 Case 221A–07 Case 221C (Amps) Number
(Amps) (Volts) Style 4 Style 4 Style 3 60 Hz Q1 Q2 Q3 Q4 in Book
4.0 600 MAC4SM 40 10 10 10 – 353
800 MAC4SN
4.0 600 MAC4M 40 35 35 35 – 348
800 MAC4N
6.0 400 T2500D 60 25 60 25 60 630
8.0 400 MAC8SD 70 5.0 5.0 5.0 – 363
600 MAC8SM
800 MAC8SN
8.0 400 MAC8D 80 35 35 35 – 358
600 MAC8M
800 MAC8N
8.0 400 MAC9D 80 50 50 50 – 369
600 MAC9M
800 MAC9N
8.0 200 MAC228A4 80 5.0 5.0 5.0 10 470
400 MAC228A6
600 MAC228A8
800 MAC228A10
8.0 600 MAC229A8FP 80 10 10 10 20 474
800 MAC229A10FP
8.0 600 2N6344 100 50 75 50 75 278
800 2N6349
8.0 400 T2800D 100 25 60 25 60 633
8.0 400 MAC218A6FP 100 50 50 50 75 453
800 MAC218A10FP
UL logo indicates UL Recognized File #E69369 Lead Identification
Shaded devices denote sensitive gate Triacs MT1 = Main Terminal 1
MT2 = Main Terminal 2
G = Gate

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TRIACs (Bidirectional Devices) (continued)
MT2 MT2

MT1 MT1 MT1

MT2 MT2
G G
MT2
G
( )

Max IGT (mA)

On–State Blocking Surge Data
RMS Voltage Isolated Current Sheet
Current VDRM, TO–220AB TO–220AB TO–220 ITSM Page
IT(RMS) VRRM Case 221A–09 Case 221A–07 Case 221C (Amps) Number
(Amps) (Volts) Style 4 Style 4 Style 3 60 Hz Q1 Q2 Q3 Q4 in Book
10 600 MAC210A8 100 50 50 50 75 433
800 MAC210A10
10 600 MAC210A8FP 100 50 50 50 75 438
800 MAC210A10FP
12 600 MAC12SM 90 5.0 5.0 5.0 – 384
800 MAC12SN
12 400 MAC12HCD 100 50 50 50 – 379
600 MAC12HCM
800 MAC12HCN
12 400 MAC12D 100 35 35 35 – 374
600 MAC12M
800 MAC12N
12 600 MAC212A8 100 50 50 50 75 448
800 MAC212A10
12 400 MAC212A6FP 100 50 50 50 75 443
600 MAC212A8FP
800 MAC212A10FP
12 600 2N6344A 100 50 75 50 75 283
600 2N6348A
800 2N6349A
15 400 MAC15SD 120 5.0 5.0 5.0 – 404
600 MAC15SM
800 MAC15SN
15 600 MAC15M 150 35 35 35 – 399
800 MAC15N
UL logo indicates UL Recognized File #E69369 Lead Identification
Shaded devices denote sensitive gate Triacs MT1 = Main Terminal 1
MT2 = Main Terminal 2
G = Gate

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TRIACs (Bidirectional Devices) (continued)
MT2 MT2

MT1 MT1 MT1

MT2 MT2
G G
MT2
G
( )

Max IGT (mA)

On–State Blocking Surge Data
RMS Voltage Isolated Current Sheet
Current VDRM, TO–220AB TO–220AB TO–220 ITSM Page
IT(RMS) VRRM Case 221A–09 Case 221A–07 Case 221C (Amps) Number
(Amps) (Volts) Style 4 Style 4 Style 3 60 Hz Q1 Q2 Q3 Q4 in Book
15 600 MAC15–8 150 50 50 50 – 389
800 MAC15–10 50 50 50 –
400 MAC15A6 50 50 50 75
600 MAC15A8 50 50 50 75
800 MAC15A10 50 50 50 75
15 400 MAC15A6FP 150 50 50 50 75 394
600 MAC15A8FP
800 MAC15A10FP
16 400 MAC16D 150 50 50 50 – 415
600 MAC16M
800 MAC16N
16 400 MAC16CD 150 35 35 35 – 410
600 MAC16CM
800 MAC16CN
16 400 MAC16HCD 150 50 50 50 – 420
600 MAC16HCM
800 MAC16HCN
20 600 MAC320A8FP 150 50 50 50 75 478
25 400 MAC223A6 250 50 50 50 75 457
600 MAC223A8
800 MAC223A10
25 400 MAC223A6FP 250 50 50 50 75 461
600 MAC223A8FP
800 MAC223A10FP
40 200 MAC224A4 350 50 50 50 75 465
400 MAC224A6
600 MAC224A8
800 MAC224A10
UL logo indicates UL Recognized File #E69369 Lead Identification
MT1 = Main Terminal 1
MT2 = Main Terminal 2
G = Gate

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Surge Suppressors and Triggers
Thyristor Surge Suppressors (Bidirectional Devices)
MT1 ( )

MT2
Maximum Minimum Data
Surge Current Maximum Breakover Holding Sheet
IPPS1 Off–State Voltage Current Page

ÁÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁ
10 x 1000 µsec Voltage SMB VBO IH Number
(Amps) (Volts) Case 403C (Volts) (mA) General Description in Book

ÁÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁÁÁ
50

ÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁ ÁÁÁÁ
170

ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁ
200
MMT05B230T3
MMT05B260T3
265
320
175
175
These Thyristor Surge Protection
d i
devices preventt overvoltage
lt damage
d
615

ÁÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁ
to sensitive circuits by lightening,
270 MMT05B310T3 365 175 induction, and power line crossing.

ÁÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁ
100 170 MMT10B230T3 265 175 They are breakover triggered crowbar 621

ÁÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁ
rotectors with turn off occurring
protectors
200 MMT10B260T3 320 175 when the surgeg current falls below the

ÁÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁ
270 MMT10B310T3 365 175 holding current value.

High Voltage Bidirectional Triggers: Sidacs

MT2 MT2

MT1 ( ) MT1 ( )
On–State Breakover Surge Data
RMS Voltage Current Sheet
Current Surmetic 50 Range ITSM Page

ÁÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁ
IT(RMS) DO–41 Case 267 VBO (Amps) Number
(Amps) Case 059A Style 2 (Volts) 60 Hz General Description in Book

ÁÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁ
0.9
ÁÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁ
ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ
MKP1V120RL

ÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
MKP1V130RL
ÁÁÁÁ
110–130
120–140
4.0 High voltage trigger devices similar in
operation to triacs. Upon reaching the
breakover voltage in either direction
direction,
607

ÁÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MKP1V160, RL 150–170 the devices switch to a low voltage on

ÁÁÁÁÁ
ÁÁÁÁÁÁ
Á
ÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁ
ÁÁÁ
MKP1V240, RL 220–250 state.

ÁÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁ
1.0 MKP3V120, RL 110–130 20 611
MKP3V240, RL 220–250

Thyristor Triggers: Programmable Unijunction Transistors (PUT’s)

A
G
K

IP IV
Data
RG = 10K RG = 1M TO–92(1) RG = 10K RG = 1M Sheet
ohm ohm (TO–226AA) ohm ohm Page

ÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁ
(µ Amps (µ Amps Case 029 (µ Amps (µ Amps Number

ÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁ
max.) max.) Style 16 min.) max.) General Description in Book

ÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁ
5.0 2.0 2N6027 70 50 Similar to unijunction transistors, except that IP, 265
IV and intrinsic voltage are programmable
IV, rogrammable

ÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁ
1.0 0.15 2N6028 25 25 (adjustable) by means of external voltage divider.
UL logo indicates UL Recognized File #E116110 Lead Identification: Suppressor/Sidac Lead Identification: PUT
(1) See TO–92 data sheets for complete device suffix packaging MT1 = Main Terminal 1 A = Anode
ordering options. MT2 = Main Terminal 2 K = Cathode
RLRA, RLRE, RL, & RL1 suffixes: Radial Tape and Reel G = Gate
RLRM & ZL1 suffixes: Radial Tape and Ammo Pack

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Page
2N5060 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 258
2N6027, 2N6028 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 265
2N6071A/B Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 272
2N6344, 2N6349 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 278
2N6344A, 2N6348A, 2N6349A . . . . . . . . . . . . . . . . . . . . 283
2N6394 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 288
2N6400 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 293
2N6504 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 298
C106 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 303
C122F1, C122B1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 308
MAC08BT1, MAC08MT1 . . . . . . . . . . . . . . . . . . . . . . . . . 311
MAC4DCM, MAC4DCN . . . . . . . . . . . . . . . . . . . . . . . . . . 320
MAC4DHM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 328
MAC4DLM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 334
MAC4DSM, MAC4DSN . . . . . . . . . . . . . . . . . . . . . . . . . . 340
MAC4M, MAC4N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 348
MAC4SM, MAC4SN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 353
MAC8D, MAC8M, MAC8N . . . . . . . . . . . . . . . . . . . . . . . . 358
MAC8SD, MAC8SM, MAC8SN . . . . . . . . . . . . . . . . . . . . 363
MAC9D, MAC9M, MAC9N . . . . . . . . . . . . . . . . . . . . . . . . 369
MAC12D, MAC12M, MAC12N . . . . . . . . . . . . . . . . . . . . 374
MAC12HCD, MAC12HCM, MAC12HCN . . . . . . . . . . . . 379
MAC12SM, MAC12SN . . . . . . . . . . . . . . . . . . . . . . . . . . . 384
MAC15 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 389
MAC15A6FP, MAC15A8FP, MAC15A10FP . . . . . . . . . 394
MAC15M, MAC15N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 399
MAC15SD, MAC15SM, MAC15SN . . . . . . . . . . . . . . . . 404
MAC16CD, MAC16CM, MAC16CN . . . . . . . . . . . . . . . . 410
MAC16D, MAC16M, MAC16N . . . . . . . . . . . . . . . . . . . . 415
MAC16HCD, MAC16HCM, MAC16HCN . . . . . . . . . . . . 420
MAC97 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 425
MAC210A8, MAC210A10 . . . . . . . . . . . . . . . . . . . . . . . . . 433
MAC210A8FP, MAC210A10FP . . . . . . . . . . . . . . . . . . . . 438
MAC212A6FP, MAC212A8FP, MAC212A10FP . . . . . . 443
MAC212A8, MAC212A10 . . . . . . . . . . . . . . . . . . . . . . . . . 448
MAC218A6FP, MAC218A10FP . . . . . . . . . . . . . . . . . . . . 453
MAC223A6, MAC223A8, MAC223A10 . . . . . . . . . . . . . 457
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CHAPTER 3
Data Sheets
Page
MAC223A6FP, MAC223A8FP, MAC223A10FP . . . . . . 461
MAC224A Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 465
MAC228A Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470
MAC229A8FP, MAC229A10FP . . . . . . . . . . . . . . . . . . . . 474
MAC320A8FP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 478
MAC997 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 483
MCR08B, MCR08M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 491
MCR8DCM, MCR8DCN . . . . . . . . . . . . . . . . . . . . . . . . . . 499
MCR8DSM, MCR8DSN . . . . . . . . . . . . . . . . . . . . . . . . . . 504
MCR8M, MCR8N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 510
MCR8SD, MCR8SM, MCR8SN . . . . . . . . . . . . . . . . . . . 514
MCR12D, MCR12M, MCR12N . . . . . . . . . . . . . . . . . . . . 518
MCR12DCM, MCR12DCN . . . . . . . . . . . . . . . . . . . . . . . . 522
MCR12DSM, MCR12DSN . . . . . . . . . . . . . . . . . . . . . . . . 528
MCR12LD, MCR12LM, MCR12LN . . . . . . . . . . . . . . . . . 534
MCR16N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 538
MCR22–6, MCR22–8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 543
MCR25D, MCR25M, MCR25N . . . . . . . . . . . . . . . . . . . . 550
MCR68–2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555
MCR69–2, MCR69–3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 559
MCR72–3, MCR72–6, MCR72–8 . . . . . . . . . . . . . . . . . . 563
MCR100 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 566
MCR106–6, MCR106–8 . . . . . . . . . . . . . . . . . . . . . . . . . . 572
MCR218–2, MCR218–4, MCR218–6 . . . . . . . . . . . . . . . 575
MCR218–6FP, MCR218–10FP . . . . . . . . . . . . . . . . . . . . 579
MCR225–8FP, MCR225–10FP . . . . . . . . . . . . . . . . . . . . 584
MCR264–4, MCR264–6, MCR264–8 . . . . . . . . . . . . . . . 589
MCR265–4 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593
MCR703A Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 597
MCR716, MCR718 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 602
MKP1V120 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 607
MKP3V120, MKP3V240 . . . . . . . . . . . . . . . . . . . . . . . . . . 611
MMT05B230T3, MMT05B260T3, MMT05B310T3 . . . . 615
MMT10B230T3, MMT10B260T3, MMT10B310T3 . . . . 621
T2322B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 627
T2500D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 630
T2800D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 633
2N5060 Series
Preferred Device

Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Annular PNPN devices designed for high volume consumer
applications such as relay and lamp drivers, small motor controls, gate
http://onsemi.com
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-226AA (TO-92) package
which is readily adaptable for use in automatic insertion equipment. SCRs
• Sensitive Gate Trigger Current — 200 µA Maximum 0.8 AMPERES RMS
• Low Reverse and Forward Blocking Current — 50 µA Maximum, 30 thru 200 VOLTS
TC = 110°C
• Low Holding Current — 5 mA Maximum
• Passivated Surface for Reliability and Uniformity
• Device Marking: Device Type, e.g., 2N5060, Date Code G
A K
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
*
(TJ = 40 to 110°C, Sine Wave, VRRM
50 to 60 Hz, Gate Open) 2N5060 30
2N5061 60
2N5062 100
2N5064 200
On-State Current RMS IT(RMS) 0.8 Amp 1
(180° Conduction Angles; TC = 80°C) 2
3
*Average On-State Current IT(AV) Amp
(180° Conduction Angles)
TO–92 (TO–226AA)
(TC = 67°C) 0.51
CASE 029
(TC = 102°C) 0.255
STYLE 10
*Peak Non-repetitive Surge Current, ITSM 10 Amps
TA = 25°C PIN ASSIGNMENT
(1/2 cycle, Sine Wave, 60 Hz)
1 Cathode
Circuit Fusing Considerations (t = 8.3 ms) I2t 0.4 A2s
2 Gate
*Forward Peak Gate Power PGM 0.1 Watt
(Pulse Width v
1.0 µsec; TA = 25°C)
3 Anode

*Forward Average Gate Power PG(AV) 0.01 Watt

(TA = 25°C, t = 8.3 ms)
ORDERING INFORMATION
*Forward Peak Gate Current IGM 1.0 Amp
(Pulse Width v
1.0 µsec; TA = 25°C)
See detailed ordering and shipping information in the package
dimensions section on page 264 of this data sheet.

*Reverse Peak Gate Voltage VRGM 5.0 Volts

(Pulse Width v
1.0 µsec; TA = 25°C) Preferred devices are recommended choices for future use
and best overall value.
*Operating Junction Temperature Range TJ –40 to °C
+110
*Storage Temperature Range Tstg –40 to °C
+150
*Indicates JEDEC Registered Data.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.

 Semiconductor Components Industries, LLC, 2000 258 Publication Order Number:

May, 2000 – Rev. 4 2N5060/D
 2N5060 Series

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
*Thermal Resistance, Junction to Case(1) RθJC 75 °C/W
Thermal Resistance, Junction to Ambient RθJA 200 °C/W
*Lead Solder Temperature — +230* °C
(Lead Length q1/16″ from case, 10 s Max)

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current(2) IDRM, IRRM
(VAK = Rated VDRM or VRRM) TC = 25°C — — 10 µA
TC = 110°C — — 50 µA
ON CHARACTERISTICS
*Peak Forward On–State Voltage(3) VTM — — 1.7 Volts
(ITM = 1.2 A peak @ TA = 25°C)
Gate Trigger Current (Continuous dc)(4) IGT µA
*(VAK = 7 Vdc, RL = 100 Ohms) TC = 25°C — — 200
TC = –40°C — — 350
Gate Trigger Voltage (Continuous dc)(4) TC = 25°C VGT — — 0.8 Volts
*(VAK = 7 Vdc, RL = 100 Ohms) TC = –40°C — — 1.2
*Gate Non–Trigger Voltage VGD Volts
(VAK = Rated VDRM, RL = 100 Ohms) TC = 110°C 0.1 — —
Holding Current (4) TC = 25°C IH — — 5.0 mA
*(VAK = 7 Vdc, initiating current = 20 mA) TC = –40°C — — 10
Turn-On Time µs
Delay Time td — 3.0 —
Rise Time tr — 0.2 —
(IGT = 1 mA, VD = Rated VDRM,
Forward Current = 1 A, di/dt = 6 A/µs
Turn-Off Time tq µs
(Forward Current = 1 A pulse,
Pulse Width = 50 µs,
0.1% Duty Cycle, di/dt = 6 A/µs,
dv/dt = 20 V/µs, IGT = 1 mA) 2N5060, 2N5061 — 10 —
2N5062, 2N5064 — 30 —

DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage dv/dt — 30 — V/µs
(Rated VDRM, Exponential)
*Indicates JEDEC Registered Data.
(1) This measurement is made with the case mounted “flat side down” on a heat sink and held in position by means of a metal clamp over the
curved surface.
(2) RGK = 1000 Ω is included in measurement.
(3) Forward current applied for 1 ms maximum duration, duty cycle p 1%.
(4) RGK current is not included in measurement.

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 2N5060 Series

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak on State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –

CURRENT DERATING
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (°C)

130 a 130
α = CONDUCTION ANGLE α
TA , MAXIMUM ALLOWABLE AMBIENT

120 α = CONDUCTION ANGLE

CASE MEASUREMENT
POINT – CENTER OF 110
110
TEMPERATURE ( °C)

FLAT PORTION TYPICAL PRINTED

100 CIRCUIT BOARD
dc 90
MOUNTING
90

80 70
α = 30° 120° 180° dc
60° 90°
70
50
60
α = 30° 60° 90° 120° 180°
50 30
0 0.1 0.2 0.3 0.4 0.5 0 0.1 0.2 0.3 0.4
IT(AV), AVERAGE ON-STATE CURRENT (AMP) IT(AV), AVERAGE ON-STATE CURRENT (AMP)

Figure 1. Maximum Case Temperature Figure 2. Maximum Ambient Temperature

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 2N5060 Series

CURRENT DERATING

5.0 10

ITSM , PEAK SURGE CURRENT (AMP)

7.0
3.0
5.0
2.0 TJ = 110°C

25°C
3.0

1.0
i T , INSTANTANEOUS ON-STATE CURRENT (AMP)

2.0
0.7

0.5
1.0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
0.3 NUMBER OF CYCLES

Figure 4. Maximum Non–Repetitive Surge Current

0.2

0.8
180°
0.1 120°
P(AV), MAXIMUM AVERAGE POWER

a 90°
0.07 60°
0.6 α = CONDUCTION ANGLE
DISSIPATION (WATTS)

0.05 α = 30°

0.4
0.03 dc

0.02
0.2

0.01 0
0 0.5 1.0 1.5 2.0 2.5 0 0.1 0.2 0.3 0.4 0.5
vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) IT(AV), AVERAGE ON-STATE CURRENT (AMP)

Figure 3. Typical Forward Voltage Figure 5. Power Dissipation

r(t), TRANSIENT THERMAL RESISTANCE NORMALIZED

1.0

0.5

0.2

0.1

0.05

0.02

0.01
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
t, TIME (SECONDS)

Figure 6. Thermal Response

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 2N5060 Series

TYPICAL CHARACTERISTICS

I GT , GATE TRIGGER CURRENT (NORMALIZED)

0.8 200
VAK = 7.0 V
VG , GATE TRIGGER VOLTAGE (VOLTS)

100 VAK = 7.0 V

RL = 100 RL = 100
0.7 RGK = 1.0 k 50
2N5062-64
20
0.6
10
5.0
0.5 2N5060-61
2.0

0.4 1.0
0.5
0.3 0.2
– 75 –50 –25 0 25 50 75 100 110 –75 –50 –25 0 25 50 75 100 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Typical Gate Trigger Voltage Figure 8. Typical Gate Trigger Current

4.0
VAK = 7.0 V
I H , HOLDING CURRENT (NORMALIZED)

3.0 RL = 100
RGK = 1.0 k
2.0

1.0 2N5060,61
0.8
2N5062-64
0.6

0.4
–75 –50 –25 0 25 50 75 100 110
TJ, JUNCTION TEMPERATURE (°C)

Figure 9. Typical Holding Current

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 2N5060 Series

TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL

H2A H2A
H2B H2B

W2
H4 H5
T1
L1
H1
W1 W
L T

F1 T2
F2
P2 P2 D

P1
P

Figure 10. Device Positioning on Tape

Specification
Inches Millimeter
Symbol Item Min Max Min Max
D Tape Feedhole Diameter 0.1496 0.1653 3.8 4.2
D2 Component Lead Thickness Dimension 0.015 0.020 0.38 0.51
F1, F2 Component Lead Pitch 0.0945 0.110 2.4 2.8
H Bottom of Component to Seating Plane .059 .156 1.5 4.0
H1 Feedhole Location 0.3346 0.3741 8.5 9.5
H2A Deflection Left or Right 0 0.039 0 1.0
H2B Deflection Front or Rear 0 0.051 0 1.0
H4 Feedhole to Bottom of Component 0.7086 0.768 18 19.5
H5 Feedhole to Seating Plane 0.610 0.649 15.5 16.5
L Defective Unit Clipped Dimension 0.3346 0.433 8.5 11
L1 Lead Wire Enclosure 0.09842 — 2.5 —
P Feedhole Pitch 0.4921 0.5079 12.5 12.9
P1 Feedhole Center to Center Lead 0.2342 0.2658 5.95 6.75
P2 First Lead Spacing Dimension 0.1397 0.1556 3.55 3.95
T Adhesive Tape Thickness 0.06 0.08 0.15 0.20
T1 Overall Taped Package Thickness — 0.0567 — 1.44
T2 Carrier Strip Thickness 0.014 0.027 0.35 0.65
W Carrier Strip Width 0.6889 0.7481 17.5 19
W1 Adhesive Tape Width 0.2165 0.2841 5.5 6.3
W2 Adhesive Tape Position .0059 0.01968 .15 0.5
NOTES:
1. Maximum alignment deviation between leads not to be greater than 0.2 mm.
2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.
3. Component lead to tape adhesion must meet the pull test requirements.
4. Maximum non–cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.
5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.
6. No more than 1 consecutive missing component is permitted.
7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.
8. Splices will not interfere with the sprocket feed holes.

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 2N5060 Series

ORDERING & SHIPPING INFORMATION: 2N5060 Series packaging options, Device Suffix
Europe
U.S. Equivalent Shipping Description of TO92 Tape Orientation
2N5060,61,62,64 Bulk in Box (5K/Box) N/A, Bulk
2N5060,61,62,64RLRA Radial Tape and Reel (2K/Reel) Round side of TO92 and adhesive tape visible
2N5060,64RLRM 2N5060RL1 Radial Tape and Fan Fold Box (2K/Box) Flat side of TO92 and adhesive tape visible

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2N6027, 2N6028
Preferred Device

Programmable
Unijunction Transistor
Programmable Unijunction
Transistor Triggers
Designed to enable the engineer to “program’’ unijunction http://onsemi.com
characteristics such as RBB, η, IV, and IP by merely selecting two
resistor values. Application includes thyristor–trigger, oscillator, pulse PUTs
and timing circuits. These devices may also be used in special thyristor
applications due to the availability of an anode gate. Supplied in an
40 VOLTS
inexpensive TO–92 plastic package for high–volume requirements, 300 mW
this package is readily adaptable for use in automatic insertion
equipment.
• Programmable — RBB, η, IV and IP G
• Low On–State Voltage — 1.5 Volts Maximum @ IF = 50 mA A K
• Low Gate to Anode Leakage Current — 10 nA Maximum
• High Peak Output Voltage — 11 Volts Typical
• Low Offset Voltage — 0.35 Volt Typical (RG = 10 k ohms)
• Device Marking: Logo, Device Type, e.g., 2N6027, Date Code

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit
1
*Power Dissipation PF 300 mW 2
3
Derate Above 25°C 1/θJA 4.0 mW/°C
*DC Forward Anode Current IT 150 mA TO–92 (TO–226AA)
Derate Above 25°C 2.67 mA/°C CASE 029
*DC Gate Current IG "50 mA
STYLE 16

Repetitive Peak Forward Current ITRM Amps PIN ASSIGNMENT

100 µs Pulse Width, 1% Duty Cycle 1.0
1 Anode
*20 µs Pulse Width, 1% Duty Cycle 2.0
2 Gate
Non–Repetitive Peak Forward Current ITSM 5.0 Amps
10 µs Pulse Width 3 Cathode

*Gate to Cathode Forward Voltage VGKF 40 Volts

*Gate to Cathode Reverse Voltage VGKR *5.0 Volts
ORDERING INFORMATION
*Gate to Anode Reverse Voltage VGAR 40 Volts See detailed ordering and shipping information in the package
*Anode to Cathode Voltage(1) VAK "40 Volts
dimensions section on page 271 of this data sheet.

Operating Junction Temperature Range TJ –50 to °C Preferred devices are recommended choices for future use
+100 and best overall value.

*Storage Temperature Range Tstg –55 to °C

+150
*Indicates JEDEC Registered Data
(1) Anode positive, RGA = 1000 ohms
Anode negative, RGA = open

 Semiconductor Components Industries, LLC, 2000 265 Publication Order Number:

May, 2000 – Rev. 2 2N6027/D
 2N6027, 2N6028

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 75 °C/W
Thermal Resistance, Junction to Ambient RθJA 200 °C/W
Maximum Lead Temperature for Soldering Purposes TL 260 °C
t
( 1/16″ from case, 10 secs max)

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Fig. No. Symbol Min Typ Max Unit
*Peak Current 2,9,11 IP µA
(VS = 10 Vdc, RG = 1 MΩ) 2N6027 — 1.25 2.0
2N6028 — 0.08 0.15
(VS = 10 Vdc, RG = 10 k ohms) 2N6027 — 4.0 5.0
2N6028 — 0.70 1.0
*Offset Voltage 1 VT Volts
(VS = 10 Vdc, RG = 1 MΩ) 2N6027 0.2 0.70 1.6
2N6028 0.2 0.50 0.6
(VS = 10 Vdc, RG = 10 k ohms) (Both Types) 0.2 0.35 0.6
*Valley Current 1,4,5 IV µA
(VS = 10 Vdc, RG = 1 MΩ) 2N6027 — 18 50
2N6028 — 18 25
(VS = 10 Vdc, RG = 10 k ohms) 2N6027 70 150 —
2N6028 25 150 —
(VS = 10 Vdc, RG = 200 ohms) 2N6027 1.5 — — mA
2N6028 1.0 — —
*Gate to Anode Leakage Current — IGAO nAdc
(VS = 40 Vdc, TA = 25°C, Cathode Open) — 1.0 10
(VS = 40 Vdc, TA = 75°C, Cathode Open) — 3.0 —
Gate to Cathode Leakage Current — IGKS — 5.0 50 nAdc
(VS = 40 Vdc, Anode to Cathode Shorted)
*Forward Voltage (IF = 50 mA Peak)(1) 1,6 VF — 0.8 1.5 Volts
*Peak Output Voltage 3,7 Vo 6.0 11 — Volt
(VG = 20 Vdc, CC = 0.2 µF)
Pulse Voltage Rise Time 3 tr — 40 80 ns
(VB = 20 Vdc, CC = 0.2 µF)
*Indicates JEDEC Registered Data
(1) Pulse Test: Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.

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 2N6027, 2N6028

+VB IA VA
IA A RG = R1 R2
R2 R1 + R2
G R1 + –VP
– VS = V VS
R1 + R2 B RG VT = VP – VS
VAK R1 VAK
VS
K
VF
VV
IA
IGAO IP IV IF
1A – Programmable Unijunction 1B – Equivalent Test Circuit for
with “Program” Resistors Figure 1A used for electrical
IC – Electrical Characteristics
R1 and R2 characteristics testing
(also see Figure 2)

Figure 1. Electrical Characterization

+VB
–
Adjust 100k IP (SENSE) +V
for 1.0% 100 µV = 1.0 nA 510k
16k Vo
Turn–on +
Threshold 6V
2N5270
R
VB RG = R/2
0.01 µF VS = VB/2 CC vo 27k
Scope (See Figure 1) 20 Ω 0.6 V t
Put tf
20 Under R
Test

Figure 2. Peak Current (IP) Test Circuit Figure 3. Vo and tr Test Circuit

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 2N6027, 2N6028

TYPICAL VALLEY CURRENT BEHAVIOR

1000 500
IV, VALLEY CURRENT (µ A)

IV, VALLEY CURRENT (µ A)

RG = 10 kΩ
100 RG = 10 kΩ

100
100 kΩ
100 kΩ
1 MΩ
10 1 MΩ

10 5
5 10 15 20 –50 –25 0 +25 +50 +75 +100
VS, SUPPLY VOLTAGE (VOLTS) TA, AMBIENT TEMPERATURE (°C)

Figure 4. Effect of Supply Voltage Figure 5. Effect of Temperature

10 25
TA = 25°C CC = 0.2 µF
TA = 25°C
V F, PEAK FORWARD VOLTAGE (VOLTS)

5.0
(SEE FIGURE 3)
Vo, PEAK OUTPUT VOLTAGE (VOLTS)

2.0 20

1.0
15
0.5

0.2
10
0.1 1000 pF

0.05
5.0
0.02
0.01 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 0 5.0 10 15 20 25 30 35 40

IF, PEAK FORWARD CURRENT (AMP) VS, SUPPLY VOLTAGE (VOLTS)

Figure 6. Forward Voltage Figure 7. Peak Output Voltage

+
B2
A
A E RT
R2 R2
P RBB = R1 + R2 A G
G G
N R1
η=
P R1 + R2
R1 R1
N CC
K
K K
B1
Circuit Symbol Equivalent Circuit Typical Application
with External “Program”
Resistors R1 and R2

Figure 8. Programmable Unijunction

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 2N6027, 2N6028

TYPICAL PEAK CURRENT BEHAVIOR

2N6027
10 100
50
5.0
IP, PEAK CURRENT ( µA)

IP, PEAK CURRENT ( µA)

20 VS = 10 VOLTS
3.0
10 (SEE FIGURE 2)
2.0
5.0
1.0
RG = 10 kΩ 2.0
0.5 100 kΩ 1.0 RG = 10 kΩ
TA = 25°C
0.3 1.0 MΩ (SEE FIGURE 2) 0.5 100 kΩ
0.2 1.0 MΩ
0.2
0.1 0.1
5.0 10 15 20 –50 –25 0 +25 +50 +75 +100

VS, SUPPLY VOLTAGE (VOLTS) TA, AMBIENT TEMPERATURE (°C)

Figure 9. Effect of Supply Voltage and RG Figure 10. Effect of Temperature and RG

2N6028

1.0 10
0.7 5.0
0.5
IP, PEAK CURRENT ( µA)

IP, PEAK CURRENT ( µA)

RG = 10 kΩ 2.0 VS = 10 VOLTS
0.3
100 kΩ 1.0 (SEE FIGURE 2)
0.2
0.5
0.1
0.07 0.2 RG = 10 kΩ
0.05 0.1
1.0 MΩ
0.03 TA = 25°C 100 kΩ
0.05
0.02 (SEE FIGURE 2)
0.02 1.0 MΩ

0.01 0.01
5.0 10 15 20 –50 –25 0 +25 +50 +75 +100

VS, SUPPLY VOLTAGE (VOLTS) TA, AMBIENT TEMPERATURE (°C)

Figure 11. Effect of Supply Voltage and RG Figure 12. Effect of Temperature and RG

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 2N6027, 2N6028

TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL

H2A H2A
H2B H2B

W2
H4 H5
T1
L1
H1
W1 W
L T

F1 T2
F2
P2 P2 D

P1
P

Figure 13. Device Positioning on Tape

Specification
Inches Millimeter
Symbol Item Min Max Min Max
D Tape Feedhole Diameter 0.1496 0.1653 3.8 4.2
D2 Component Lead Thickness Dimension 0.015 0.020 0.38 0.51
F1, F2 Component Lead Pitch 0.0945 0.110 2.4 2.8
H Bottom of Component to Seating Plane .059 .156 1.5 4.0
H1 Feedhole Location 0.3346 0.3741 8.5 9.5
H2A Deflection Left or Right 0 0.039 0 1.0
H2B Deflection Front or Rear 0 0.051 0 1.0
H4 Feedhole to Bottom of Component 0.7086 0.768 18 19.5
H5 Feedhole to Seating Plane 0.610 0.649 15.5 16.5
L Defective Unit Clipped Dimension 0.3346 0.433 8.5 11
L1 Lead Wire Enclosure 0.09842 — 2.5 —
P Feedhole Pitch 0.4921 0.5079 12.5 12.9
P1 Feedhole Center to Center Lead 0.2342 0.2658 5.95 6.75
P2 First Lead Spacing Dimension 0.1397 0.1556 3.55 3.95
T Adhesive Tape Thickness 0.06 0.08 0.15 0.20
T1 Overall Taped Package Thickness — 0.0567 — 1.44
T2 Carrier Strip Thickness 0.014 0.027 0.35 0.65
W Carrier Strip Width 0.6889 0.7481 17.5 19
W1 Adhesive Tape Width 0.2165 0.2841 5.5 6.3
W2 Adhesive Tape Position .0059 0.01968 .15 0.5
NOTES:
1. Maximum alignment deviation between leads not to be greater than 0.2 mm.
2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.
3. Component lead to tape adhesion must meet the pull test requirements.
4. Maximum non–cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.
5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.
6. No more than 1 consecutive missing component is permitted.
7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.
8. Splices will not interfere with the sprocket feed holes.

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 2N6027, 2N6028

ORDERING & SHIPPING INFORMATION: 2N6027 and 2N6028 packaging options, Device Suffix
Europe
U.S. Equivalent Shipping Description of TO92 Tape Orientation
2N6027, 2N6028 Bulk in Box (5K/Box) N/A, Bulk
2N6027, 2N6028RLRA Radial Tape and Reel (2K/Reel) Round side of TO92 and adhesive tape visible
2N6027RL1 Radial Tape and Reel (2K/Reel) Flat side of TO92 and adhesive tape visible
2N6028RLRM Radial Tape and Fan Fold Box (2K/Box) Flat side of TO92 and adhesive tape visible
2N6028RLRP Radial Tape and Fan Fold Box (2K/Box) Round side of TO92 and adhesive tape visible

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2N6071A/B Series
Preferred Device

Sensitive Gate Triacs

Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or http://onsemi.com
negative gate triggering.
• Sensitive Gate Triggering Uniquely Compatible for Direct Coupling TRIACS
to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit 4 AMPERES RMS
Logic Functions
• Gate Triggering 4 Mode — 2N6071A,B, 2N6073A,B, 2N6075A,B 200 thru 600 VOLTS
• Blocking Voltages to 600 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
MT2 MT1
• Small, Rugged, Thermopad Construction for Low Thermal G
Resistance, High Heat Dissipation and Durability
• Device Marking: Device Type, e.g., 2N6071A, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
*Peak Repetitive Off-State Voltage(1)
*
VDRM, Volts
(TJ = 40 to 110°C, Sine Wave, VRRM
50 to 60 Hz, Gate Open)
2N6071A,B 200
2N6073A,B 400
2N6075A,B 600 3
2 1
*On-State RMS Current (TC = 85°C) IT(RMS) 4.0 Amps
Full Cycle Sine Wave 50 to 60 Hz TO–225AA
(formerly TO–126)
*Peak Non–repetitive Surge Current ITSM 30 Amps
(One Full cycle, 60 Hz, TJ = +110°C) CASE 077
STYLE 5
Circuit Fusing Considerations I2t 3.7 A2s
(t = 8.3 ms)
PIN ASSIGNMENT
*Peak Gate Power PGM 10 Watts 1 Main Terminal 1
(Pulse Width ≤ 1.0 µs, TC = 85°C)
2 Main Terminal 2
*Average Gate Power PG(AV) 0.5 Watt
(t = 8.3 ms, TC = 85°C) 3 Gate

*Peak Gate Voltage VGM 5.0 Volts

(Pulse Width ≤ 1.0 µs, TC = 85°C)
ORDERING INFORMATION
*Operating Junction Temperature Range TJ –40 to °C
+110 Device Package Shipping

*Storage Temperature Range Tstg –40 to °C 2N6071A TO225AA 500/Box

+150
2N6071B TO225AA 500/Box
Mounting Torque (6-32 Screw)(2) — 8.0 in. lb.
2N6073A TO225AA 500/Box
*Indicates JEDEC Registered Data.
2N6073B TO225AA 500/Box
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the 2N6075A TO225AA 500/Box
voltage ratings of the devices are exceeded.
(2) Torque rating applies with use of a compression washer. Mounting torque in 2N6075B TO225AA 500/Box
excess of 6 in. lb. does not appreciably lower case-to-sink thermal
resistance. Main terminal 2 and heatsink contact pad are common.
Preferred devices are recommended choices for future use
and best overall value.

 Semiconductor Components Industries, LLC, 2000 272 Publication Order Number:

May, 2000 – Rev. 3 2N6071/D
 2N6071A/B Series

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
*Thermal Resistance, Junction to Case RθJC 3.5 °C/W
Thermal Resistance, Junction to Ambient RθJA 75 °C/W

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
*Peak Repetitive Blocking Current IDRM,
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C IRRM — — 10 µA
TJ = 110°C — — 2 mA

ON CHARACTERISTICS
*Peak On-State Voltage(1) VTM — — 2 Volts
"
(ITM = 6 A Peak)
*Gate Trigger Voltage (Continuous dc) VGT Volts
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = –40°C)
All Quadrants — 1.4 2.5
Gate Non–Trigger Voltage VGD Volts
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = 110°C)
All Quadrants 0.2 — —
*Holding Current IH mA
(Main Terminal Voltage = 12 Vdc, Gate Open,
"
Initiating Current = 1 Adc) (TJ = –40°C) — — 30
(TJ = 25°C) — — 15
Turn-On Time tgt — 1.5 — µs
(ITM = 14 Adc, IGT = 100 mAdc)

QUADRANT
(Maximum Value)
IGT I II III IV
Type
@ TJ mA mA mA mA

Gate Trigger Current (Continuous dc) 2N6071A +25°C 5 5 5 10

(Main Terminal Voltage = 12 Vdc
Vdc, RL = 100 ohms) 2N6073A
2N6075A –40°C 20 20 20 30

2N6071B +25°C 3 3 3 5
2N6073B
2N6075B –40°C 15 15 15 20

DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage dv/dt(c) — 5 — V/µs
@ VDRM, TJ = 85°C, Gate Open, ITM = 5.7 A, Exponential Waveform,
Commutating di/dt = 2.0 A/ms
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

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 2N6071A/B Series

SAMPLE APPLICATION:
TTL-SENSITIVE GATE 4 AMPERE TRIAC
TRIGGERS IN MODES II AND III

14
0V
MC7400 LOAD
4 510 2N6071A
–VEE 7 Ω 115 VAC
VEE = 5.0 V 60 Hz
+

Trigger devices are recommended for gating on Triacs. They provide:

1. Consistent predictable turn-on points.
2. Simplified circuitry.
3. Fast turn-on time for cooler, more efficient and reliable operation.

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

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 2N6071A/B Series

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

SENSITIVE GATE LOGIC REFERENCE

Firing Quadrant
IC Logic
g
Functions I II III IV

TTL 2N6071A 2N6071A

Series Series

HTL 2N6071A 2N6071A

Series Series

CMOS (NAND) 2N6071B 2N6071B

Series Series

CMOS (Buffer) 2N6071B 2N6071B

Series Series

Operational 2N6071A 2N6071A

Amplifier Series Series

Zero Voltage 2N6071A 2N6071A

Switch Series Series

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 2N6071A/B Series

110 110
α = 30°
60°
TC , CASE TEMPERATURE (° C)

TC , CASE TEMPERATURE (° C)
90°
100 100

α = 30°
60°
90 90° 120°
90
120°
180° 180°
dc
a a dc
80 80
α a

α = CONDUCTION ANGLE α = CONDUCTION ANGLE

70 70
0 1.0 2.0 3.0 4.0 0 1.0 2.0 3.0 4.0
IT(AV), AVERAGE ON-STATE CURRENT (AMP) IT(RMS), RMS ON-STATE CURRENT (AMP)

Figure 1. Average Current Derating Figure 2. RMS Current Derating

8.0 8.0
a a dc
P(AV) , AVERAGE POWER (WATTS)

P(AV) , AVERAGE POWER (WATTS)

180°
a a
6.0 120° dc 6.0
α = 180°
α = CONDUCTION ANGLE 90° α = CONDUCTION ANGLE
60° 120°
4.0 4.0
α = 30°

30°
2.0 2.0 60°
90°

0 0
0 1.0 2.0 3.0 4.0 0 1.0 2.0 3.0 4.0
IT(AV), AVERAGE ON-STATE CURRENT (AMP) IT(RMS), RMS ON-STATE CURRENT (AMP)

Figure 3. Power Dissipation Figure 4. Power Dissipation

V GT , GATE TRIGGER VOLTAGE (NORMALIZED)

3.0 3.0
I GT , GATE TRIGGER CURRENT (NORMALIZED)

OFF-STATE VOLTAGE = 12 Vdc OFF-STATE VOLTAGE = 12 Vdc

ALL MODES ALL MODES
2.0 2.0

1.0 1.0

0.7 0.7

0.5 0.5

0.3 0.3
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 5. Typical Gate–Trigger Voltage Figure 6. Typical Gate–Trigger Current

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 2N6071A/B Series

40
3.0
GATE OPEN

IH, HOLDING CURRENT (NORMALIZED)

30 APPLIES TO EITHER DIRECTION
2.0

20

1.0
10
0.7
7.0
0.5
ITM , ON-STATE CURRENT (AMP)

5.0

0.3
TJ = 110°C –60 –40 –20 0 20 40 60 80 100 120 140
3.0
TJ, JUNCTION TEMPERATURE (°C)

2.0 Figure 8. Typical Holding Current

TJ = 25°C

1.0 34
32
0.7
PEAK SINE WAVE CURRENT (AMP)
30

0.5 28
26
24
0.3
TJ = –40 to +110°C
22
f = 60 Hz
0.2 20
18
16
0.1 14
0 1.0 2.0 3.0 4.0 5.0 1.0 2.0 3.0 4.0 5.0 7.0 10

VTM, ON-STATE VOLTAGE (VOLTS) NUMBER OF FULL CYCLES

Figure 7. Maximum On–State Characteristics Figure 9. Maximum Allowable Surge Current

Z θJC(t), TRANSIENT THERMAL IMPEDANCE (°C/W)

10

5.0
MAXIMUM
3.0
2.0
TYPICAL
1.0

0.5
0.3
0.2

0.1
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k

t, TIME (ms)

Figure 10. Thermal Response

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2N6344, 2N6349
Preferred Device

Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full–wave silicon gate controlled solid–state devices are
needed. Triac type thyristors switch from a blocking to a conducting http://onsemi.com
state for either polarity of applied main terminal voltage with positive
or negative gate triggering. TRIACS
• Blocking Voltage to 800 Volts 8 AMPERES RMS
• All Diffused and Glass Passivated Junctions for Greater Parameter 600 thru 800 VOLTS
Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability MT2 MT1
• Gate Triggering Guaranteed in all Four Quadrants G

• For 400 Hz Operation, Consult Factory

• Device Marking: Logo, Device Type, e.g., 2N6344, Date Code
4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
* Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to +110°C, Sine Wave 50 to VRRM
60 Hz, Gate Open) 2N6344 600
2N6349 800 1
2
3
*On–State RMS Current IT(RMS) Amps
(TC = +80°C) 8.0 TO–220AB
Full Cycle Sine Wave 50 to 60 Hz CASE 221A
(TC = +90°C) 4.0 STYLE 4
*Peak Non–Repetitive Surge Current ITSM 100 Amps
(One Full Cycle, Sine Wave 60 Hz, PIN ASSIGNMENT
TC = +25°C)
1 Main Terminal 1
Preceded and followed by rated current
2 Main Terminal 2
Circuit Fusing Consideration (t = 8.3 ms) I2t 40 A2s
3 Gate
*Peak Gate Power PGM 20 Watts
(TC = +80°C, Pulse Width = 2 µs) 4 Main Terminal 2

*Average Gate Power PG(AV) 0.5 Watt

(TC = +80°C, t = 8.3 ms) ORDERING INFORMATION
*Peak Gate Current IGM 2.0 Amps
Device Package Shipping
(TC = +80°C, Pulse Width = 2.0 µs)
*Peak Gate Voltage VGM 10 Volts 2N6344 TO220AB 500/Box
(TC = +80°C, Pulse Width = 2.0 µs)
2N6349 TO220AB 500/Box
*Operating Junction Temperature Range TJ – 40 to °C
+125 Preferred devices are recommended choices for future use
*Storage Temperature Range Tstg – 40 to °C and best overall value.
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.

 Semiconductor Components Industries, LLC, 1999 278 Publication Order Number:

March, 2000 – Rev. 1 2N6344/D
 2N6344, 2N6349

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
*Thermal Resistance, Junction to Case RθJC 2.2 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
* Peak Repetitive Blocking Current IDRM,
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C IRRM — — 10 µA
TJ = 100°C — — 2.0 mA
ON CHARACTERISTICS
* Peak On–State Voltage VTM — 1.3 1.55 Volts
"
(ITM = 11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p2%)
Gate Trigger Current (Continuous dc) IGT mA
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) — 12 50
MT2(+), G(–) — 12 75
MT2(–), G(–) — 20 50
MT2(–), G(+) — 35 75
*MT2(+), G(+); MT2(–), G(–) TC = –40°C — — 100
*MT2(+), G(–); MT2(–), G(+) TC = –40°C — — 125
Gate Trigger Voltage (Continuous dc) VGT Volts
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) — 0.9 2.0
MT2(+), G(–) — 0.9 2.5
MT2(–), G(–) — 1.1 2.0
MT2(–), G(+) — 1.4 2.5
*MT2(+), G(+); MT2(–), G(–) TC = –40°C — — 2.5
*MT2(+), G(–); MT2(–), G(+) TC = –40°C — — 3.0
Gate Non–Trigger Voltage (Continuous dc) VGD Volts
(VD = Rated VDRM, RL = 10 k Ohms, TJ = 100°C)
*MT2(+), G(+); MT2(–), G(–); MT2(+), G(–); MT2(–), G(–) 0.2 — —
* Holding Current IH mA
(VD = 12 Vdc, Gate Open) TC = 25°C — 6.0 40
"
(Initiating Current = 200 mA) *TC = –40°C — — 75
* Turn-On Time tgt — 1.5 2.0 µs
(VD = Rated VDRM, ITM = 11 A, IGT = 120 mA,
Rise Time = 0.1 µs, Pulse Width = 2 µs)

DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage dv/dt(c) — 5.0 — V/µs
(VD = Rated VDRM, ITM = 11 A, Commutating di/dt = 4.0 A/ms,
Gate Unenergized, TC = 80°C)
*Indicates JEDEC Registered Data.

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 2N6344, 2N6349

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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 2N6344, 2N6349

100 10
dc
α = 30° α α = 180°

PAV , AVERAGE POWER (WATTS)

TC , CASE TEMPERATURE ( °C)

96 60° 8.0 120°

α
90° 90°
α = CONDUCTION ANGLE
92 120°
180°
6.0
[
TJ 100°C
30°
60°

88 α 4.0
α
84 2.0
α = CONDUCTION ANGLE dc

80 0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
IT(RMS), RMS ON-STATE CURRENT, (AMP) IT(RMS), RMS ON-STATE CURRENT (AMP)

Figure 1. RMS Current Derating Figure 2. On–State Power Dissipation

1.8 50
Vgt , GATE TRIGGER VOLTAGE (VOLTS)

OFF-STATE VOLTAGE = 12 V OFF-STATE VOLTAGE = 12 V

I GT , GATE TRIGGER CURRENT (mA)

1.6
30
1.4
QUADRANT 4 20
1.2

1.0
1
0.8 1 10 2
QUADRANT
QUADRANTS 2 3
0.6 7.0 4
3
0.4 5.0
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical Gate Trigger Voltage Figure 4. Typical Gate Trigger Current

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 2N6344, 2N6349

100 20
GATE OPEN
70
MAIN TERMINAL #1

I H , HOLDING CURRENT (mA)

50 POSITIVE
10

30 7.0

20 5.0
MAIN TERMINAL #2
i TM , INSTANTANEOUS ON-STATE CURRENT (AMP)

POSITIVE
TJ = 100°C 25°C
10 3.0

7.0 2.0
–60 –40 –20 0 20 40 60 80 100 120 140
5.0 TJ, JUNCTION TEMPERATURE (°C)

3.0
Figure 6. Typical Holding Current

2.0
100

I TSM , PEAK SURGE CURRENT (AMP)

1.0 80
0.7

0.5 60

0.3 40 CYCLE

0.2 TJ = 100°C
20 f = 60 Hz
Surge is preceded and followed by rated current
0.1 0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 1.0 2.0 3.0 5.0 7.0 10
vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) NUMBER OF CYCLES

Figure 5. On–State Characteristics Figure 7. Maximum Non–Repetitive

Surge Current
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0

0.5

0.2
ZθJC(t) = r(t) • RθJC
0.1

0.05

0.02

0.01
0.1 0.2 0.5 1.0 2.0 5.0 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t,TIME (ms)

Figure 8. Typical Thermal Response

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282
2N6344A, 2N6348A,
2N6349A
Preferred Device

Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are http://onsemi.com
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or TRIACS
negative gate triggering.
• Blocking Voltage to 800 Volts 12 AMPERES RMS
• All Diffused and Glass Passivated Junctions for Greater Parameter 600 thru 800 VOLTS
Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability MT2 MT1
• Gate Triggering Guaranteed in all Four Quadrants G
• For 400 Hz Operation, Consult Factory
• 8 Ampere Devices Available as 2N6344 thru 2N6349
• Device Marking: Logo, Device Type, e.g., 2N6344A, Date Code
4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
*Peak Repetitive Off–State Voltage(1) VDRM, Volts
(Gate Open, TJ = –40 to +110°C, VRRM
Sine Wave 50 to 60 Hz, Gate Open)
2N6344A, 2N6348A 600 1
2N6349A 800 2
3
*On–State RMS Current IT(RMS) A
(Full Cycle Sine Wave 50 to 60 Hz) TO–220AB
(TC = +80°C) 12 CASE 221A
(TC = +95°C) 6.0 STYLE 4

*Peak Non–repetitive Surge Current ITSM 100 A

(One Full Cycle, 60 Hz, TC = +80°C) PIN ASSIGNMENT
Preceded and followed by rated current 1 Main Terminal 1
Circuit Fusing Consideration (t = 8.3 ms) I2t 59 A2s 2 Main Terminal 2
*Peak Gate Power (TC = +80°C, PGM 20 Watts 3 Gate
Pulse Width = 2.0 µs)
4 Main Terminal 2
*Average Gate Power PG(AV) 0.5 Watt
(TC = +80°C, t = 8.3 ms)

*Peak Gate Current IGM 2.0 A

ORDERING INFORMATION
(Pulse Width = 2.0 µs; TC = +80°C)
Device Package Shipping
*Peak Gate Voltage VGM "10 Volts
2N6344A TO220AB 500/Box
(Pulse Width = 2.0 µs; TC = +80°C)
*Operating Junction Temperature Range TJ – 40 to °C 2N6348A TO220AB 500/Box
+125
2N6349A TO220AB 500/Box
*Storage Temperature Range Tstg – 40 to °C
+150
Preferred devices are recommended choices for future use
*Indicates JEDEC Registered Data. and best overall value.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.

 Semiconductor Components Industries, LLC, 1999 283 Publication Order Number:

February, 2000 – Rev. 1 2N6344A/D
 2N6344A, 2N6348A, 2N6349A

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
*Thermal Resistance, Junction to Case RθJC 2.0 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in either direction)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
*Peak Repetitive Blocking Current IDRM,
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C IRRM — — 10 µA
TJ = 110°C — — 2.0 mA
ON CHARACTERISTICS
*Peak On-State Voltage VTM — 1.3 1.75 Volts
"
(ITM = 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc) IGT mA
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) — 6.0 50
MT2(+), G(–) — 6.0 75
MT2(–), G(–) — 10 50
MT2(–), G(+) — 25 75
*MT2(+), G(+); MT2(–), G(–) TC = –40°C — — 100
*MT2(+), G(–); MT2(–), G(+) TC = –40°C — — 125
Gate Trigger Voltage (Continuous dc) VGT Volts
(VD = 12 Vdc, RL = 100 ohms)
MT2(+), G(+) — 0.9 2.0
MT2(+), G(–) — 0.9 2.5
MT2(–), G(–) — 1.1 2.0
MT2(–), G(+) — 1.4 2.5
*MT2(+), G(+); MT2(–), G(–) TC = –40°C — — 2.5
*MT2(+), G(–); MT2(–), G(+) TC = –40°C — — 3.0
Gate Non–Trigger Voltage VGD Volts
(VD = Rated VDRM, RL = 10 k ohms, TJ = 110°C)
*MT2(+), G(+); MT2(–), G(–); MT2(+), G(–); MT2(–), G(+) 0.2 — —
Holding Current IH mA
(VD = 12 Vdc, Gate Open) TC = 25°C — 6.0 40
"
Initiating Current = 200 mA *TC = –40°C — — 75
*Turn-On Time tgt — 1.5 2.0 µs
(VD = Rated VDRM, ITM = 17 A, IGT = 120 mA,
Rise Time = 0.1 µs, Pulse Width = 2 µs)

DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage dv/dt(c) — 5.0 — V/µs
(VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms,
Gate Unenergized, TC = 80°C)
*Indicates JEDEC Registered Data.

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 2N6344A, 2N6348A, 2N6349A

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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 2N6344A, 2N6348A, 2N6349A

110 20
30° dc

PAV , AVERAGE POWER (WATTS)

TC , CASE TEMPERATURE ( °C)

60° 16 α
100
90°
α
120°
12
180° α = CONDUCTION ANGLE
90
TJ = 110°C 180°
α 8.0
120°
α 90°
80 60
4.0
α = CONDUCTION ANGLE α = 30° °
dc
70 0
0 2.0 4.0 6.0 8.0 10 12 14 0 2.0 4.0 6.0 8.0 10 12 14
IT(RMS), RMS ON-STATE CURRENT, (AMP) IT(RMS), RMS ON-STATE CURRENT (AMP)

Figure 1. RMS Current Derating Figure 2. On–State Power Dissipation

1.8 50
Vgt , GATE TRIGGER VOLTAGE (VOLTS)

VD = 12 V VD = 12 V

I GT , GATE TRIGGER CURRENT (mA)

1.6
30
1.4
QUADRANT 4 20
1.2

1.0
1
0.8 1 10 2
QUADRANT
QUADRANTS 2 3
0.6 7.0 4
3
0.4 5.0
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical Gate Trigger Voltage Figure 4. Typical Gate Trigger Current

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 2N6344A, 2N6348A, 2N6349A

100 20
GATE OPEN
70
MAIN TERMINAL #1

I H , HOLDING CURRENT (mA)

50 POSITIVE
10

30 7.0

20 5.0
MAIN TERMINAL #2
i TM , INSTANTANEOUS ON-STATE CURRENT (AMP)

POSITIVE
TJ = 100°C 25°C
10 3.0

7.0 2.0
–60 –40 –20 0 20 40 60 80 100 120 140
5.0
TJ, JUNCTION TEMPERATURE (°C)

3.0
Figure 6. Typical Holding Current

2.0
100

I TSM , PEAK SURGE CURRENT (AMP)

1.0 80
0.7

0.5 60

0.3 40 CYCLE

0.2 TJ = 100°C
20 f = 60 Hz
Surge is preceded and followed by rated current
0.1 0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 1.0 2.0 3.0 5.0 7.0 10
vTM, MAXIMUM INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) NUMBER OF CYCLES

Figure 5. On–State Characteristics Figure 7. Maximum Non–Repetitive

Surge Current
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0

0.5

0.2
ZθJC(t) = r(t) • RθJC
0.1

0.05

0.02

0.01
0.1 0.2 0.5 1.0 2.0 5.0 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t,TIME (ms)

Figure 8. Typical Thermal Response

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287
2N6394 Series
Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies.
• Glass Passivated Junctions with Center Gate Geometry for Greater http://onsemi.com
Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal SCRs
Resistance, High Heat Dissipation and Durability
12 AMPERES RMS
• Blocking Voltage to 800 Volts
• Device Marking: Logo, Device Type, e.g., 2N6394, Date Code 50 thru 800 VOLTS

G
*MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
A K
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to 125°C, Sine Wave, VRRM
50 to 60 Hz, Gate Open)
2N6394 50
4
2N6395 100
2N6397 400
2N6399 800

On-State RMS Current IT(RMS) 12 A

(180° Conduction Angles; TC = 90°C)
Peak Non-Repetitive Surge Current ITSM 100 A 1
(1/2 Cycle, Sine Wave, 60 Hz, 2
3
TJ = 125°C)
TO–220AB
Circuit Fusing (t = 8.3 ms) I2t 40 A2s CASE 221A
Forward Peak Gate Power PGM 20 Watts STYLE 3
(Pulse Width ≤ 1.0 µs, TC = 90°C)
Forward Average Gate Power PG(AV) 0.5 Watts PIN ASSIGNMENT
(t = 8.3 ms, TC = 90°C) 1 Cathode

Forward Peak Gate Current IGM 2.0 A 2 Anode

(Pulse Width ≤ 1.0 µs, TC = 90°C) 3 Gate
Operating Junction Temperature Range TJ – 40 to °C 4 Anode
+125
Storage Temperature Range Tstg – 40 to °C
+150 ORDERING INFORMATION
*Indicates JEDEC Registered Data Device Package Shipping
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall 2N6394 TO220AB 500/Box
not be applied concurrent with negative potential on the anode. Blocking
2N6395 TO220AB 500/Box
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded. 2N6397 TO220AB 500/Box

2N6399 TO220AB 500/Box

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 1999 288 Publication Order Number:

February, 2000 – Rev. 2 2N6394/D
 2N6394 Series

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 2.0 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
* Peak Repetitive Forward or Reverse Blocking Current IDRM, IRRM
(VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C — — 10 µA
TJ = 125°C — — 2.0 mA
ON CHARACTERISTICS
* Peak Forward On–State Voltage(1) VTM — 1.7 2.2 Volts
(ITM = 24 A Peak)
* Gate Trigger Current (Continuous dc) IGT — 5.0 30 mA
(VD = 12 Vdc, RL = 100 Ohms)
* Gate Trigger Voltage (Continuous dc) VGT — 0.7 1.5 Volts
(VD = 12 Vdc, RL = 100 Ohms)
Gate Non–Trigger Voltage VGD 0.2 — — Volts
(VD = 12 Vdc, RL = 100 Ohms, TJ = 125°C)
* Holding Current IH — 6.0 50 mA
(VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)
Turn-On Time tgt — 1.0 2.0 µs
(ITM = 12 A, IGT = 40 mAdc, VD = Rated VDRM)
Turn-Off Time (VD = Rated VDRM) tq µs
(ITM = 12 A, IR = 12 A) — 15 —
(ITM = 12 A, IR = 12 A, TJ = 125°C) — 35 —

DYNAMIC CHARACTERISTICS
Critical Rate–of–Rise of Off-State Voltage Exponential dv/dt — 50 — V/µs
(VD = Rated VDRM, TJ = 125°C)
*Indicates JEDEC Registered Data
(1) Pulse Test: Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.

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289
 2N6394 Series

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (° C)

130 20

125 P(AV) , AVERAGE POWER (WATTS) 18

α 16 α
120 180°
α = CONDUCTION ANGLE 14 α = CONDUCTION ANGLE dc
90°
115 12
α = 30° 60°
110 10
8.0
105
dc 6.0
100
α = 30° 60° 4.0 TJ ≈ 125°C
95 2.0
90° 180°
90 0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) IT(AV), AVERAGE ON-STATE CURRENT (AMPS)

Figure 1. Current Derating Figure 2. Maximum On–State Power Dissipation

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290
 2N6394 Series

100
TJ = 25°C
70
125°C
50

30

20
i TM , INSTANTANEOUS ON–STATE CURRENT (AMPS)

10

7.0

5.0

3.0

2.0
100
95 1 CYCLE

I TSM , PEAK SURGE CURRENT (AMP)

1.0 90

0.7 85
80
0.5
75

0.3 70
TJ = 125°C
65
0.2 f = 60 Hz
60
SURGE IS PRECEDED AND
55
FOLLOWED BY RATED CURRENT
0.1 50
0.4 1.2 2.0 2.8 3.6 4.4 5.2 6.0 1.0 2.0 3.0 4.0 6.0 8.0 10
vTH, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) NUMBER OF CYCLES

Figure 3. On–State Characteristics Figure 4. Maximum Non–Repetitive Surge Current

1.0
r(t), TRANSIENT THERMAL RESISTANCE

0.7
0.5
0.3
(NORMALIZED)

0.2
ZθJC(t) = RθJC • r(t)
0.1
0.07
0.05
0.03
0.02

0.01
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k
t, TIME (ms)

Figure 5. Thermal Response

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291
 2N6394 Series

TYPICAL CHARACTERISTICS

300 3.0

I GT, GATE TRIGGER CURRENT (NORMALIZED)

200 OFF-STATE VOLTAGE = 12 V
OFF-STATE VOLTAGE = 12 V
IGTM , PEAK GATE CURRENT (mA)

2.0
100
70
50
1.0
30
TJ = –40°C
20
0.7
25°C
10
0.5
7.0
100°C
5.0
3.0 0.3
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 –40 –20 0 20 40 60 80 100 120 140 160
PULSE WIDTH (ms) TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Typical Gate Trigger Current Figure 7. Typical Gate Trigger Current
versus Pulse Width versus Temperature

1.1 30
VGT, GATE TRIGGER VOLTAGE (VOLTS)

OFF-STATE VOLTAGE = 12 V
1.0 OFF-STATE VOLTAGE = 12 V
20
IH , HOLDING CURRENT (mA)

0.9

0.8 10

0.7
7.0
0.6
5.0
0.5

0.4 3.0
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 8. Typical Gate Trigger Voltage Figure 9. Typical Holding Current

versus Temperature versus Temperature

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292
2N6400 Series
Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
half–wave silicon gate–controlled, solid–state devices are needed.
http://onsemi.com
• Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability
SCRs
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability 16 AMPERES RMS
• Blocking Voltage to 800 Volts 50 thru 800 VOLTS
• Device Marking: Logo, Device Type, e.g., 2N6400, Date Code
G
*MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) A K

Rating Symbol Value Unit

Peak Repetitive Off–State Voltage(1) VDRM, Volts
*
(TJ = 40 to 125°C, Sine Wave 50 to VRRM
60 Hz; Gate Open) 4
2N6400 50
2N6401 100
2N6402 200
2N6403 400
2N6404 600
2N6405 800
1
On-State RMS Current IT(RMS) 16 A 2
(180° Conduction Angles; TC = 100°C) 3

Average On-State Current IT(AV) 10 A TO–220AB

(180° Conduction Angles; TC = 100°C) CASE 221A
STYLE 3
Peak Non-repetitive Surge Current ITSM 160 A
(1/2 Cycle, Sine Wave 60 Hz, PIN ASSIGNMENT
TJ = 125°C) 1 Cathode
Circuit Fusing (t = 8.3 ms) I2t 145 A2s 2 Anode
Forward Peak Gate Power PGM 20 Watts 3 Gate
(Pulse Width ≤ 1.0 µs, TC = 100°C)
4 Anode
Forward Average Gate Power PG(AV) 0.5 Watts
(t = 8.3 ms, TC = 100°C)
Forward Peak Gate Current IGM 2.0 A ORDERING INFORMATION
(Pulse Width ≤ 1.0 µs, TC = 100°C)
Device Package Shipping
Operating Junction Temperature Range TJ – 40 to °C
+125 2N6400 TO220AB 500/Box

Storage Temperature Range Tstg – 40 to °C 2N6401 TO220AB 500/Box

+150
2N6402 TO220AB 500/Box
*Indicates JEDEC Registered Data.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings 2N6403 TO220AB 500/Box
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking 2N6404 TO220AB 500/Box
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded. 2N6405 TO220AB 500/Box

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 1999 293 Publication Order Number:

February, 2000 – Rev. 1 2N6400/D
 2N6400 Series

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 1.5 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
* Peak Repetitive Forward or Reverse Blocking Current IDRM, IRRM
(VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C — — 10 µA
TJ = 125°C — — 2.0 mA
ON CHARACTERISTICS
* Peak Forward On–State Voltage VTM — — 1.7 Volts
(ITM = 32 A Peak, Pulse Width ≤ 1 ms, Duty Cycle ≤ 2%)
* Gate Trigger Current (Continuous dc) TC = 25°C IGT — 9.0 30 mA
(VD = 12 Vdc, RL = 100 Ohms) TC = –40°C — — 60
* Gate Trigger Voltage (Continuous dc) VGT Volts
(VD = 12 Vdc, RL = 100 Ohms) TC = 25°C — 0.7 1.5
TC = –40°C — — 2.5
Gate Non–Trigger Voltage VGD Volts
(VD = 12 Vdc, RL = 100 Ohms) TC = +125°C 0.2 — —
* Holding Current TC = 25°C IH — 18 40 mA
(VD = 12 Vdc, Initiating Current = 200 mA,
Gate Open) *TC = –40°C — — 60
Turn-On Time tgt — 1.0 — µs
(ITM = 16 A, IGT = 40 mAdc, VD = Rated VDRM)
Turn-Off Time tq µs
(ITM = 16 A, IR = 16 A, VD = Rated VDRM) TC = 25°C — 15 —
TJ = +125°C — 35 —

DYNAMIC CHARACTERISTICS
Critical Rate–of–Rise of Off-State Voltage dv/dt — 50 — V/µs
(VD = Rated VDRM, Exponential Waveform) TJ = +125°C
*Indicates JEDEC Registered Data.

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 2N6400 Series

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –

128 16
180°
TC, MAXIMUM CASE TEMPERATURE (° C)

P(AV) , AVERAGE POWER (WATTS) 14

124
TJ ≈ 125°C 120°
α 90° dc
12
120 α = CONDUCTION ANGLE 60°
10
116 α = 30°
8.0
112
dc 6.0
108
4.0
104 180° α
2.0
α = 30° 60° 90° 120° α = CONDUCTION ANGLE
100 0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)

Figure 1. Average Current Derating Figure 2. Maximum On–State Power Dissipation

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 2N6400 Series

200

100

70
i TM , INSTANTANEOUS ON–STATE FORWARD CURRENT (AMPS)

50

30

20

TJ = 25°C
10
125°C
7.0

5.0

3.0 160
I TSM , PEAK SURGE CURRENT (AMP) 1 CYCLE
2.0 150

140
1.0

0.7
130
0.5 TJ = 125°C
f = 60 Hz
120
0.3 SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT
0.2 110
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 1.0 2.0 3.0 4.0 6.0 8.0 10
vTM, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) NUMBER OF CYCLES

Figure 3. On–State Characteristics Figure 4. Maximum Non–Repetitive Surge Current

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0
0.7
0.5
0.3
0.2
ZθJC(t) = RθJC • r(t)
0.1
0.07
0.05
0.03
0.02

0.01
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k
t, TIME (ms)

Figure 5. Thermal Response

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 2N6400 Series

TYPICAL CHARACTERISTICS

100 100
70 OFF-STATE VOLTAGE = 12 V
RL = 50 W

I GT, GATE TRIGGER CURRENT (mA)

50
i GT, PEAK GATE CURRENT (mA)

30
20 TJ = –40°C

10 10
7.0 25°C
5.0
3.0 125°C
2.0

1.0 1
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 –40 –25 –10 5 20 35 50 65 80 95 110 125
PULSE WIDTH (ms) TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Typical Gate Trigger Current Figure 7. Typical Gate Trigger Current
versus Pulse Width versus Junction Temperature

1.0 100
VGT, GATE TRIGGER VOLTAGE (VOLTS)

0.9
IH , HOLDING CURRENT (mA)

0.8

0.7

0.6 10

0.5

0.4

0.3
0.2 1
–40 –25 –10 5 20 35 50 65 80 95 110 125 –40 –25 –10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 8. Typical Gate Trigger Voltage Figure 9. Typical Holding Current

versus Junction Temperature versus Junction Temperature

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297
2N6504 Series
Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
• Glass Passivated Junctions with Center Gate Fire for Greater http://onsemi.com
Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Constructed for Low Thermal SCRs
Resistance, High Heat Dissipation and Durability
25 AMPERES RMS
• Blocking Voltage to 800 Volts
• 300 A Surge Current Capability 50 thru 800 VOLTS
• Device Marking: Logo, Device Type, e.g., 2N6504, Date Code
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) A K

Rating Symbol Value Unit

*Peak Repetitive Off–State Voltage(1) VDRM, Volts
(Gate Open, Sine Wave 50 to 60 Hz, VRRM
TJ = 25 to 125°C) 4
2N6504 50
2N6505 100
2N6507 400
2N6508 600
2N6509 800
On-State RMS Current IT(RMS) 25 A 1
(180° Conduction Angles; TC = 85°C) 2
3
Average On-State Current IT(AV) 16 A
TO–220AB
(180° Conduction Angles; TC = 85°C)
CASE 221A
Peak Non-repetitive Surge Current ITSM A STYLE 3
8.3 ms 300
(1/2 Cycle, Sine Wave 60 Hz, TJ = 85°C) PIN ASSIGNMENT
1.5 ms 350
1 Cathode
Forward Peak Gate Power PGM 20 Watts
(Pulse Width ≤ 1.0 µs, TC = 85°C) 2 Anode
3 Gate
Forward Average Gate Power PG(AV) 0.5 Watts
(t = 8.3 ms, TC = 85°C) 4 Anode

Forward Peak Gate Current IGM 2.0 A

(Pulse Width ≤ 1.0 µs, TC = 85°C)
ORDERING INFORMATION
Operating Junction Temperature Range TJ – 40 to °C
+125 Device Package Shipping

Storage Temperature Range Tstg – 40 to °C 2N6504 TO220AB 500/Box

+150
2N6505 TO220AB 500/Box
*Indicates JEDEC Registered Data
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings 2N6507 TO220AB 500/Box
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking 2N6508 TO220AB 500/Box
voltages shall not be tested with a constant current source such that the 2N6509 TO220AB 500/Box
voltage ratings of the devices are exceeded.

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 1999 298 Publication Order Number:

February, 2000 – Rev. 3 2N6504/D
 2N6504 Series

*THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 1.5 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
* Peak Repetitive Forward or Reverse Blocking Current IDRM, IRRM
(VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C — — 10 µA
TJ = 125°C — — 2.0 mA
ON CHARACTERISTICS
* Forward On–State Voltage(1) VTM — — 1.8 Volts
(ITM = 50 A)
* Gate Trigger Current (Continuous dc) TC = 25°C IGT — 9.0 30 mA
(VAK = 12 Vdc, RL = 100 Ohms) TC = –40°C — — 75
* Gate Trigger Voltage (Continuous dc) VGT — 1.0 1.5 Volts
(VAK = 12 Vdc, RL = 100 Ohms, TC = –40°C)
Gate Non-Trigger Voltage VGD 0.2 — — Volts
(VAK = 12 Vdc, RL = 100 Ohms, TJ = 125°C)
* Holding Current TC = 25°C IH — 18 40 mA
(VAK = 12 Vdc, Initiating Current = 200 mA,
Gate Open) TC = –40°C — — 80
* Turn-On Time tgt — 1.5 2.0 µs
(ITM = 25 A, IGT = 50 mAdc)
Turn-Off Time (VDRM = rated voltage) tq µs
(ITM = 25 A, IR = 25 A) — 15 —
(ITM = 25 A, IR = 25 A, TJ = 125°C) — 35 —

DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage dv/dt — 50 — V/µs
(Gate Open, Rated VDRM, Exponential Waveform)
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

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299
 2N6504 Series

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –

13 32
TC, MAXIMUM CASE TEMPERATURE ( °C)

0
P(AV) , AVERAGE POWER (WATTS)
180°
12 α α
0 24
α = CONDUCTION ANGLE α = CONDUCTION ANGLE 60° 90° dc
110 α = 30°
16
10
0 TJ = 125°C
α = 30° 60° 90° 180° dc 8.0
90

80 0
0 4.0 8.0 12 16 20 0 4.0 8.0 12 16 20
IT(AV), ON-STATE FORWARD CURRENT (AMPS) IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)

Figure 1. Average Current Derating Figure 2. Maximum On–State Power Dissipation

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300
 2N6504 Series

100

70

50

30
125°C
20
iF , INSTANTANEOUS FORWARD CURRENT (AMPS)

25°C
10

7.0

5.0

3.0

2.0
300
1 CYCLE

I TSM , PEAK SURGE CURRENT (AMP)

1.0 275

0.7
250
0.5

0.3 225
TC = 85°C
0.2 f = 60 Hz
200
SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT
0.1 175
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 1.0 2.0 3.0 4.0 6.0 8.0 10
vF, INSTANTANEOUS VOLTAGE (VOLTS) NUMBER OF CYCLES

Figure 3. Typical On–State Characteristics Figure 4. Maximum Non–Repetitive Surge Current

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0
0.7
0.5
0.3
0.2
ZθJC(t) = RθJC • r(t)
0.1
0.07
0.05
0.03
0.02

0.01
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k
t, TIME (ms)

Figure 5. Thermal Response

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301
 2N6504 Series

TYPICAL TRIGGER CHARACTERISTICS

100 1.0

VGT, GATE TRIGGER VOLTAGE (VOLTS)

0.9
I GT, GATE TRIGGER CURRENT (mA)

0.8

0.7
10 0.6

0.5

0.4

0.3
1 0.2
–40 –25 –10 5 20 35 50 65 80 95 110 125 –40 –25 –10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Typical Gate Trigger Current Figure 7. Typical Gate Trigger Voltage
versus Junction Temperature versus Junction Temperature

100
IH , HOLDING CURRENT (mA)

10

1
–40 –25 –10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)

Figure 8. Typical Holding Current

versus Junction Temperature

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302
C106 Series
Preferred Device

Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Glassivated PNPN devices designed for high volume consumer
applications such as temperature, light, and speed control; process and http://onsemi.com
remote control, and warning systems where reliability of operation is
important. SCRs
• Glassivated Surface for Reliability and Uniformity 4 AMPERES RMS
• Power Rated at Economical Prices 200 thru 600 VOLTS
• Practical Level Triggering and Holding Characteristics
• Flat, Rugged, Thermopad Construction for Low Thermal Resistance,
G
High Heat Dissipation and Durability
A K
• Sensitive Gate Triggering
• Device Marking: Device Type, e.g., C106B, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(Sine Wave, 50–60 Hz, RGK = 1 kΩ, VRRM
TC = –40° to 110°C)
C106B 200
3
C106D, C106D1 400 2 1
C106M, C106M1 600
On-State RMS Current IT(RMS) 4.0 Amps TO–225AA
(180° Conduction Angles, TC = 80°C) (formerly TO–126)
CASE 077
Average On–State Current IT(AV) 2.55 Amps STYLE 2
(180° Conduction Angles, TC = 80°C)
Peak Non-Repetitive Surge Current ITSM 20 Amps PIN ASSIGNMENT
(1/2 Cycle, Sine Wave, 60 Hz, 1 Cathode
TJ = +110°C)
2 Anode
Circuit Fusing Considerations (t = 8.3 ms) I2t 1.65 A2s
3 Gate
Forward Peak Gate Power PGM 0.5 Watt
v
(Pulse Width 1.0 µsec, TC = 80°C)
Forward Average Gate Power PG(AV) 0.1 Watt ORDERING INFORMATION
v
(Pulse Width 1.0 µsec, TC = 80°C)
Device Package Shipping
Forward Peak Gate Current IGM 0.2 Amp
v
(Pulse Width 1.0 µsec, TC = 80°C) C106B TO225AA 500/Box

Operating Junction Temperature Range TJ – 40 to °C C106D TO225AA 500/Box

+110
C106D1 TO225AA 500/Box
Storage Temperature Range Tstg – 40 to °C
+150 C106M TO225AA 500/Box

Mounting Torque(2) — 6.0 in. lb. C106M1 TO225AA 500/Box

(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall Preferred devices are recommended choices for future use
not be applied concurrent with negative potential on the anode. Blocking and best overall value.
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) Torque rating applies with use of compression washer (B52200F006).
Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink
thermal resistance. Anode lead and heatsink contact pad are common.

 Semiconductor Components Industries, LLC, 2000 303 Publication Order Number:

May, 2000 – Rev. 3 C106/D
 C106 Series

THERMAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 3.0 °C/W
Thermal Resistance, Junction to Ambient RθJA 75 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current IDRM, IRRM
(VAK = Rated VDRM or VRRM, RGK = 1000 Ohms) TJ = 25°C — — 10 µA
TJ = 110°C — — 100 µA
ON CHARACTERISTICS
Peak Forward On–State Voltage(1) VTM — — 2.2 Volts
(IFM = 1 A Peak for C106B, D, & M)
(IFM = 4 A Peak for C106D1, & M1)
Gate Trigger Current (Continuous dc)(2) IGT µA
(VAK = 6 Vdc, RL = 100 Ohms) TJ = 25°C — 15 200
TJ = –40°C — 35 500
Peak Reverse Gate Voltage (IGR = 10 µA) VGRM — — 6.0 Volts
Gate Trigger Voltage (Continuous dc)(2) VGT Volts
(VAK = 6 Vdc, RL = 100 Ohms) TJ = 25°C 0.4 .60 0.8
TJ = –40°C 0.5 .75 1.0
Gate Non–Trigger Voltage (Continuous dc)(2) VGD 0.2 — — Volts
(VAK = 12 V, RL = 100 Ohms, TJ = 110°C)
Latching Current IL mA
(VAK = 12 V, IG = 20 mA) TJ = 25°C — .20 5.0
TJ = –40°C — .35 7.0
Holding Current (VD = 12 Vdc) IH mA
(Initiating Current = 20 mA, Gate Open) TJ = 25°C — .19 3.0
TJ = –40°C — .33 6.0
TJ = +110°C — .07 2.0
DYNAMIC CHARACTERISTICS
Critical Rate–of–Rise of Off–State Voltage dv/dt — 8.0 — V/µs
(VAK = Rated VDRM, Exponential Waveform, RGK = 1000 Ohms,
TJ = 110°C)
(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
(2) RGK is not included in measurement.

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304
 C106 Series

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –

110 10
JUNCTION TEMPERATURE ≈ 110°C
P(AV), AVERAGE ON-STATE POWER DISSIPATION (WATTS)
100
TC, CASE TEMPERATURE ( °C)

90 8
DC HALF SINE WAVE
80
RESISTIVE OR INDUCTIVE LOAD
70 6 50 TO 400Hz.
60
DC
50 4
HALF SINE WAVE
40 RESISTIVE OR INDUCTIVE LOAD.
30 50 to 400 Hz 2
20
10 0
0 .4 .8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 0 .4 .8 1.2 1.6 2.0 2.4 2.6 3.2 3.6 4.0
IT(AV) AVERAGE ON-STATE CURRENT (AMPERES) IT(AV) AVERAGE ON-STATE CURRENT (AMPERES)

Figure 1. Average Current Derating Figure 2. Maximum On–State Power Dissipation

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305
 C106 Series

100 1000
IGT, GATE TRIGGER CURRENT ( mA)

IH, HOLDING CURRENT ( m A)

10 100

1 10
–40 –25 –10 5 20 35 50 65 80 95 110 –40 –25 –10 5 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical Gate Trigger Current versus Figure 4. Typical Holding Current versus
Junction Temperature Junction Temperature

1.0 1000

0.9
VGT , GATE TRIGGER VOLTAGE (V)

0.8 I L , LATCHING CURRENT (m A)

0.7

0.6 100

0.5

0.4

0.3
0.2 10
–45 –25 –10 5 20 35 50 65 80 95 110 –40 –25 –10 5 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 5. Typical Gate Trigger Voltage versus Figure 6. Typical Latching Current versus
Junction Temperature Junction Temperature

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306
 C106 Series

Package Interchangeability
The dimensional diagrams below compare the critical dimensions of the ON Semiconductor
C-106 package with competitive devices. It has been demonstrated that the smaller dimensions of
the ON Semiconductor package make it compatible in most lead-mount and chassis-mount
applications. The user is advised to compare all critical dimensions for mounting compatibility.

.400
____
.295
____ .360
.305 .115
____ .095 .127
____ .135
____ ____ DIA
.145
____ .130 .123 .026
____
.105 .115
.155 .019
.148
____
.158 .520
____
.425
____ 5_ TYP .480
.435
1 2 3 .385
____ .315
____
.365 .285
.050
____
.095 .575
____
.655 .420
____
.400

.105
____
.015
____ .105
____ .095
.040 .095 .190
____
.025
.094 BSC .054
____ .170
.045
____
.025
____ .055 .046
.035
.020
____
.026

ON Semiconductor C-106 Package Competitive C-106 Package

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307
C122F1, C122B1

Silicon Controlled Rectifiers

Reverse Blocking Thyristors
Designed primarily for full-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
half–wave silicon gate–controlled, solid–state devices are needed.
http://onsemi.com
• Glass Passivated Junctions and Center Gate Fire for Greater
Parameter Uniformity and Stability
SCRs
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability 8 AMPERES RMS
• Blocking Voltage to 200 Volts 50 thru 200 VOLTS
• Device Marking: Logo, Device Type, e.g., C122F1, Date Code
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) A K

Rating Symbol Value Unit

Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = 25 to 100°C, Sine Wave, VRRM
50 to 60 Hz; Gate Open) 4
C122F1 50
C122B1 200
On-State RMS Current IT(RMS) 8.0 Amps
(180° Conduction Angles; TC = 75°C)
Peak Non-Repetitive Surge Current ITSM 90 Amps
(1/2 Cycle, Sine Wave, 60 Hz, 1
2
TC = 75°C) 3
Circuit Fusing Considerations I2t 34 A2s TO–220AB
(t = 8.3 ms) CASE 221A
STYLE 3
Forward Peak Gate Power PGM 5.0 Watts
(Pulse Width = 10 µs, TC = 70°C)
PIN ASSIGNMENT
Forward Average Gate Power PG(AV) 0.5 Watt
(t = 8.3 ms, TC = 70°C) 1 Cathode

Forward Peak Gate Current IGM 2.0 Amps 2 Anode

(Pulse Width = 10 µs, TC = 70°C) 3 Gate
Operating Junction Temperature Range TJ – 40 to °C 4 Anode
+125
Storage Temperature Range Tstg – 40 to °C
+150 ORDERING INFORMATION
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings Device Package Shipping
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking C122F1 TO220AB 500/Box
voltages shall not be tested with a constant current source such that the
C122B1 TO220AB 500/Box
voltage ratings of the devices are exceeded.

 Semiconductor Components Industries, LLC, 1999 308 Publication Order Number:

February, 2000 – Rev. 2 C122F1/D
 C122F1, C122B1

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 1.8 °C/W
Thermal Resistance, Junction to Ambient RθJA 62.5 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current IDRM, IRRM
(VAK = Rated VDRM or VRRM, Gate Open) TC = 25°C — — 10 µA
TC = 125°C — — 0.5 mA
ON CHARACTERISTICS
Peak On–State Voltage(1) VTM — — 1.83 Volts
(ITM = 16 A Peak, TC = 25°C)
Gate Trigger Current (Continuous dc) IGT mA
(VAK = 12 V, RL = 100 Ohms) TC = 25°C — — 25
TC = –40°C — — 40
Gate Trigger Voltage (Continuous dc) VGT Volts
(VAK = 12 V, RL = 100 Ohms) TC = 25°C — — 1.5
TC = –40°C — — 2.0
Gate Non–Trigger Voltage (Continuous dc) VGD 0.2 — — Volts
(VAK = 12 V, RL = 100 Ohms, TC = 125°C)
Holding Current IH mA
(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) TC = 25°C — — 30
TC = –40°C — — 60
Turn-Off Time (VD = Rated VDRM) tq — 50 — µs
(ITM = 8 A, IR = 8 A)

DYNAMIC CHARACTERISTICS
Critical Rate–of–Rise of Off–State Voltage dv/dt — 50 — V/µs
(VAK = Rated VDRM, Exponential Waveform, Gate Open, TC = 100°C)
(1) Pulse Test: Pulse Width ≤ 1 ms, Duty Cycle ≤ 2%.

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309
 C122F1, C122B1

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C)

TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C)

100 100 CONDUCTION CONDUCTION
ANGLE ANGLE
95
0 360
90 90
ONE CYCLE OF SUPPLY
FREQUENCY
85

80 80
DC CONDUCTION 120° 180° 240° 360°
75 ANGLE = 60°
CONDUCTION 60° 90° 120° 180°
70 70 RESISTIVE OR
ANGLE = 30° 0 360
INDUCTIVE LOAD.
CONDUCTION 65
ANGLE 50 TO 400 Hz
60 60
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8
IT(AV), AVERAGE ON–STATE FORWARD CURRENT (AMPERES) IT(AV), AVERAGE ON–STATE CURRENT (AMPERES)

Figure 1. Current Derating (Half–Wave) Figure 2. Current Derating (Full–Wave)

P(AV), AVERAGE ON–STATE POWER DISSIPATION (WATTS)

TC , AVERAGE ON–STATE POWER DISSIPATION (WATTS)

14 10
240° 360°
RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hz
12 DC 180°
8
10 120°
CONDUCTION
180° 6
8 ANGLE = 60°
120°
90° CONDUCTION CONDUCTION
CONDUCTION 60°
6 ANGLE ANGLE
ANGLE 30° 4

4 0 360

ONE CYCLE OF SUPPLY

2
FREQUENCY
2
RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hz
0 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8
IT(AV), AVERAGE ON–STATE CURRENT (AMPERES) IT(AV), AVERAGE ON–STATE CURRENT (AMPERES)

Figure 3. Maximum Power Dissipation Figure 4. Maximum Power Dissipation

(Half–Wave) (Full–Wave)

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310
MAC08BT1, MAC08MT1
Preferred Device

Sensitive Gate Triacs

Silicon Bidirectional Thyristors
Designed for use in solid state relays, MPU interface, TTL logic and
other light industrial or consumer applications. Supplied in surface
mount package for use in automated manufacturing.
http://onsemi.com
• Sensitive Gate Trigger Current in Four Trigger Modes
• Blocking Voltage to 600 Volts
TRIAC
• Glass Passivated Surface for Reliability and Uniformity
0.8 AMPERE RMS
• Surface Mount Package
• Device Marking: MAC08BT1: AC08B; MAC08MT1: A08M, and 200 thru 600 VOLTS
Date Code

MT2 MT1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
G
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(Sine Wave, 50 to 60 Hz, Gate Open, VRRM
TJ = 25 to 110°C)
4
MAC08BT1 200
MAC08MT1 600
1
2 3
On–State Current RMS (TC = 80°C) IT(RMS) 0.8 Amps
(Full Sine Wave 50 to 60 Hz)
SOT–223
Peak Non–repetitive Surge Current ITSM 8.0 Amps CASE 318E
(One Full Cycle Sine Wave, 60 Hz, STYLE 11
TC = 25°C)
Circuit Fusing Considerations I2t 0.4 A2s PIN ASSIGNMENT
(Pulse Width = 8.3 ms)
1 Main Terminal 1
Peak Gate Power PGM 5.0 Watts
(TC = 80°C, Pulse Width v 1.0 µs) 2
3
Main Terminal 2
Gate
Average Gate Power PG(AV) 0.1 Watt
(TC = 80°C, t = 8.3 ms) 4 Main Terminal 2

Operating Junction Temperature Range TJ – 40 to °C

+110 ORDERING INFORMATION
Storage Temperature Range Tstg – 40 to °C
Device Package Shipping
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking MAC08BT1 SOT223 16mm Tape and Reel
voltages shall not be tested with a constant current source such that the (1K/Reel)
voltage ratings of the devices are exceeded.
MAC08MT1 SOT223 16mm Tape and Reel
(1K/Reel)

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 2000 311 Publication Order Number:

May, 2000 – Rev. 3 MAC08BT1/D
 MAC08BT1, MAC08MT1

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RθJA 156 °C/W
PCB Mounted per Figure 1
Thermal Resistance, Junction to Tab RθJT 25 °C/W
Measured on MT2 Tab Adjacent to Epoxy
Maximum Device Temperature for Soldering Purposes TL 260 °C
(for 10 Seconds Maximum)

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM,
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C IRRM — — 10 µA
TJ = 110°C — — 200 µA
ON CHARACTERISTICS
Peak On–State Voltage(1) VTM — — 1.9 Volts
"
(IT = 1.1 A Peak)
Gate Trigger Current (Continuous dc) All Quadrants IGT — — 10 mA
(VD = 12 Vdc, RL = 100 Ω)
Holding Current (Continuous dc) IH — — 5.0 mA
(VD = 12 Vdc, Gate Open, Initiating Current = "20 mA)
Gate Trigger Voltage (Continuous dc) All Quadrants VGT — — 2.0 Volts
(VD = 12 Vdc, RL = 100 Ω)

DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage (dv/dt)c 1.5 — — V/µs
(f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/mS
On–State Current Duration = 2.0 mS, VDRM = 200 V,
Gate Unenergized, TC = 110°C,
Gate Source Resistance = 150 Ω, See Figure 10)
Critical Rate–of–Rise of Off State Voltage dv/dt 10 — — V/µs
(Vpk = Rated VDRM, TC= 110°C, Gate Open, Exponential Method)
(1) Pulse Test: Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.

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Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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0.15
3.8
0.079
2.0

0.244
0.091 0.091 6.2
2.3 2.3
0.079
2.0
inches
0.059 0.059 0.059 BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR.
mm
0.984 1.5 1.5 1.5 BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL.
25.0 MATERIAL: G10 FIBERGLASS BASE EPOXY

0.096 0.096 0.096

2.44 2.44 2.44

0.059 0.059
1.5 1.5

0.472
12.0

Figure 1. PCB for Thermal Impedance and

Power Testing of SOT-223

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IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) 10 160

Rθ JA , JUNCTION TO AMBIENT THERMAL

150 TYPICAL L
140 MAXIMUM
130
DEVICE MOUNTED ON L
120

RESISTANCE, ° C/W
1.0 FIGURE 1 AREA = L2 4
110 PCB WITH TAB AREA
100 AS SHOWN
90 1 2 3
80
0.1
70
TYPICAL AT TJ = 110°C 60
MAX AT TJ = 110°C 50 MINIMUM
MAX AT TJ = 25°C 40 FOOTPRINT = 0.076 cm2
0.01 30
0 1.0 2.0 3.0 4.0 5.0 0 2.0 4.0 6.0 8.0 10
vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) FOIL AREA (cm2)

Figure 2. On-State Characteristics Figure 3. Junction to Ambient Thermal

T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (°C)

Resistance versus Copper Tab Area

110 110
α
100 100
30° α 30°

AMBIENT TEMPERATURE (°C)

60° 60°
T A , MAXIMUM ALLOWABLE
90 90
α = CONDUCTION
90° 90°
ANGLE
80 80
dc dc
70 70
α = 180° α = 180°
60 120° 60 120°
50 50 1.0 cm2 FOIL AREA
MINIMUM FOOTPRINT α
50 OR 60 Hz
40 40 α
50 OR 60 Hz
30 30 α = CONDUCTION
ANGLE
20 20
0 0.1 0.2 0.3 0.4 0.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
IT(RMS), RMS ON-STATE CURRENT (AMPS) IT(RMS), RMS ON-STATE CURRENT (AMPS)

Figure 4. Current Derating, Minimum Pad Size Figure 5. Current Derating, 1.0 cm Square Pad
T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (°C)

Reference: Ambient Temperature Reference: Ambient Temperature

110 110
α 30°
100 α 105
30°
T(tab) , MAXIMUM ALLOWABLE

dc 60°
60° α = CONDUCTION
TAB TEMPERATURE (° C)

90 dc 90° ANGLE 100

α = 180°
α = 180°
80 95 90°
120° 120°
70 90
REFERENCE: α
4.0 cm2 FOIL AREA FIGURE 1 α
60 85
α = CONDUCTION
ANGLE
50 80
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
IT(RMS), RMS ON-STATE CURRENT (AMPS) IT(RMS), ON-STATE CURRENT (AMPS)

Figure 6. Current Derating, 2.0 cm Square Pad Figure 7. Current Derating

Reference: Ambient Temperature Reference: MT2 Tab

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1.0 1.0
α
0.9
α
POWER DISSIPATION (WATTS)

RESISTANCE (NORMALIZED)
0.8

r(t), TRANSIENT THERMAL

P(AV) , MAXIMUM AVERAGE

α = CONDUCTION
0.7
ANGLE
0.6
120°
0.5 0.1
30°
0.4 α = 180°
60°
0.3
dc 90°
0.2
0.1
0 0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.0001 0.001 0.01 0.1 1.0 10 100
IT(RMS), RMS ON-STATE CURRENT (AMPS) t, TIME (SECONDS)
Figure 8. Power Dissipation Figure 9. Thermal Response, Device
Mounted on Figure 1 Printed Circuit Board

LL 1N4007
200 VRMS
ADJUST FOR MEASURE
ITM, 60 Hz VAC RS
I
TRIGGER CONTROL

CHARGE
TRIGGER –
CHARGE CONTROL 200 V
CS ADJUST FOR +
MT2 dv/dt(c)
1N914 51 W
NON-POLAR MT1
CL G

Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.

Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage (dv/dt)c

10 10
60 Hz
80° 60°
180 Hz
400 Hz
COMMUTATING dv/dt

COMMUTATING dv/dt

300 Hz
dv/dt c , (V/ µ S)

dv/dt c , (V/ µ S)

110°
ITM
100° VDRM = 200 V

tw
1
f=
ń +
2 tw 6f I
TM
VDRM (di dt) c 1000
1.0 1.0
1.0 10 60 70 80 90 100 110
di/dtc, RATE OF CHANGE OF COMMUTATING CURRENT (A/mS) TJ, JUNCTION TEMPERATURE (°C)

Figure 11. Typical Commutating dv/dt versus Figure 12. Typical Commutating dv/dt versus
Current Crossing Rate and Junction Temperature Junction Temperature at 0.8 Amps RMS

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60 10
600 Vpk IGT3

I GT , GATE TRIGGER CURRENT (mA)

TJ = 110°C

50 MAIN TERMINAL #2 IGT2

POSITIVE
STATIC dv/dt (V/ µs)

IGT4
IGT1
40 1.0

30
MAIN TERMINAL #1
POSITIVE
20 0.1
10 100 1000 10,000 – 40 – 20 0 20 40 60 80 100
RG, GATE – MAIN TERMINAL 1 RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (°C)

Figure 13. Exponential Static dv/dt versus Figure 14. Typical Gate Trigger Current Variation
Gate – Main Terminal 1 Resistance

6.0 1.1

5.0 VGT , GATE TRIGGER VOLTAGE (VOLTS)

IH , HOLDING CURRENT (mA)

4.0 VGT3
MAIN TERMINAL #2 VGT4
POSITIVE
VGT2
3.0
VGT1

2.0
MAIN TERMINAL #1
POSITIVE
1.0

0 0.3
– 40 – 20 0 20 40 60 80 100 – 40 – 20 0 20 40 60 80 100
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 15. Typical Holding Current Variation Figure 16. Gate Trigger Voltage Variation

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INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the interface between the board and the package. With the
total design. The footprint for the semiconductor packages correct pad geometry, the packages will self align when
must be the correct size to insure proper solder connection subjected to a solder reflow process.

0.15
3.8

0.079
2.0

0.248
6.3
0.091 0.091
2.3 2.3

0.079
2.0

0.059 0.059 0.059 inches

1.5 1.5 1.5 mm

SOT-223

SOT-223 POWER DISSIPATION

The power dissipation of the SOT-223 is a function of the
MT2 pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from
the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet for the SOT-223 package, PD can be calculated as
follows:
TJ(max) – TA
PD =
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 550 milliwatts.
PD = 110°C – 25°C = 550 milliwatts
156°C/W
The 156°C/W for the SOT-223 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 550
milliwatts. There are other alternatives to achieving higher
power dissipation from the SOT-223 package. One is to
increase the area of the MT2 pad. By increasing the area of
the MT2 pad, the power dissipation can be increased.
Although one can almost double the power dissipation with
this method, one will be giving up area on the printed
circuit board which can defeat the purpose of using surface
mount technology. A graph of RθJA versus MT2 pad area is
shown in Figure 3.
Another alternative would be to use a ceramic substrate
or an aluminum core board such as Thermal Clad. Using
a board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.

SOLDER STENCIL GUIDELINES

Prior to placing surface mount components onto a printed or stainless steel with a typical thickness of 0.008 inches.
circuit board, solder paste must be applied to the pads. A The stencil opening size for the SOT-223 package should
solder stencil is required to screen the optimum amount of be the same as the pad size on the printed circuit board, i.e.,
solder paste onto the footprint. The stencil is made of brass a 1:1 registration.

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SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.

TYPICAL SOLDER HEATING PROFILE

For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones,
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 17 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems but it is a good starting point. Factors that
can affect the profile include the type of soldering system in
use, density and types of components on the board, type of
solder used, and the type of board or substrate material
being used. This profile shows temperature versus time.
The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177–189°C. When this type of furnace is used for solder
reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.

STEP 1 STEP 2 STEP 3 STEP 4 STEP 5 STEP 6 STEP 7

PREHEAT VENT HEATING HEATING HEATING VENT COOLING
ZONE 1 “SOAK” ZONES 2 & 5 ZONES 3 & 6 ZONES 4 & 7
“SPIKE” 205° TO
“RAMP” “RAMP” “SOAK”
219°C
200°C DESIRED CURVE FOR HIGH 170°C PEAK AT
MASS ASSEMBLIES SOLDER
160°C
150°C JOINT

150°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
100°C 140°C (DEPENDING ON
MASS OF ASSEMBLY)
100°C

DESIRED CURVE FOR LOW

MASS ASSEMBLIES
50°C

TIME (3 TO 7 MINUTES TOTAL) TMAX

Figure 17. Typical Solder Heating Profile

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MAC4DCM, MAC4DCN
Preferred Device

Triacs
Silicon Bidirectional Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
http://onsemi.com
• Small Size Surface Mount DPAK Package
• Passivated Die for Reliability and Uniformity
TRIACS
• Blocking Voltage to 800 V
4.0 AMPERES RMS
• On–State Current Rating of 4.0 Amperes RMS at 108°C
• High Immunity to dv/dt — 500 V/ms at 125°C 600 thru 800 VOLTS
• High Immunity to di/dt — 6.0 A/ms at 125°C
• Device Marking: Device Type with “M’’ truncated, e.g.,
MAC4DCM: AC4DCM, Date Code MT2 MT1
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
4
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to 125°C, Sine Wave, VRRM
50 to 60 Hz, Gate Open) 4
MAC4DCM 600
MAC4DCN 800 1 1 2
2
3 3
On–State RMS Current IT(RMS) 4.0 Amps
(Full Cycle Sine Wave, 60 Hz, D–PAK D–PAK
TC = 108°C) CASE 369 CASE 369A
STYLE 6 STYLE 6
Peak Non-Repetitive Surge Current ITSM 40 Amps
(One Full Cycle Sine Wave, 60 Hz,
PIN ASSIGNMENT
TJ = 125°C)
1 Main Terminal 1
Circuit Fusing Consideration I2t 6.6 A2sec
(t = 8.3 msec) 2 Main Terminal 2
3 Gate
Peak Gate Power PGM 0.5 Watt
(Pulse Width ≤ 10 msec, TC = 108°C) 4 Main Terminal 2
Average Gate Power PG(AV) 0.1 Watt
(t = 8.3 msec, TC = 108°C)
ORDERING INFORMATION
Peak Gate Current IGM 0.5 Amp
(Pulse Width ≤ 10 msec, TC = 108°C) Device Package Shipping

Peak Gate Voltage VGM 5.0 Volts MAC4DCMT4 DPAK 369A 16mm Tape
(Pulse Width ≤ 10 msec, TC = 108°C) and Reel
(2.5K/Reel)
Operating Junction Temperature Range TJ – 40 to 125 °C
Storage Temperature Range Tstg – 40 to 150 °C MAC4DCM–1 DPAK 369 75 Units/Rail
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking MAC4DCNT4 DPAK 369A 16mm Tape
voltages shall not be tested with a constant current source such that the and Reel
voltage ratings of the device are exceeded. (2.5K/Reel)

MAC4DCN–1 DPAK 369 75 Units/Rail

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 2000 320 Publication Order Number:

May, 2000 – Rev. 3 MAC4DCM/D
 MAC4DCM, MAC4DCN

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance — Junction to Case RqJC 3.5 °C/W
Thermal Resistance — Junction to Ambient RqJA 88
Thermal Resistance — Junction to Ambient(1) RqJA 80
Maximum Lead Temperature for Soldering Purposes(2) TL 260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM, mA
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C IRRM — — 0.01
TJ = 125°C — — 2.0
ON CHARACTERISTICS
Peak On–State Voltage(3) VTM — 1.3 1.6 Volts
(ITM = ± 6.0 A)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W) IGT mA
MT2(+), G(+) 8.0 12 35
MT2(+), G(–) 8.0 18 35
MT2(–), G(–) 8.0 22 35
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W) VGT Volts
MT2(+), G(+) 0.5 0.8 1.3
MT2(+), G(–) 0.5 0.8 1.3
MT2(–), G(–) 0.5 0.8 1.3
Gate Non–Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) W VGD 0.2 0.4 — Volts
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–) TJ = 125°C
Holding Current IH 6.0 22 35 mA
(VD = 12 V, Gate Open, Initiating Current = ± 200 mA)
Latching Current (VD = 12 V, IG = 35 mA) IL mA
MT2(+), G(+) — 30 60
MT2(+), G(–) — 50 80
MT2(–), G(–) — 20 60
DYNAMIC CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Rate of Change of Commutating Current di/dt(c) 6.0 8.4 — A/ms
m
(VD = 400 V, ITM = 4.0 A, Commutating dv/dt = 18 V/ sec,
m
Gate Open, TJ = 125°C, f = 250 Hz, CL = 5.0 F, LL = 20 mH,
No Snubber)
See Figure 16
Critical Rate of Rise of Off–State Voltage dv/dt 500 1700 — m
V/ s
(VD = 0.67 X Rated VDRM, Exponential Waveform,
Gate Open, TJ = 125°C)
(1) Surface mounted on minimum recommended pad size.
(2) 1/8″ from case for 10 seconds.
(3) Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.

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Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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125 6.0

P(AV) , AVERAGE POWER DISSIPATION (WATTS)

TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) 180° dc
5.0
α
120 a = 30° 120°
α
60° 90°
4.0
90° a = CONDUCTION ANGLE
115 3.0
α
α 2.0 60°
110 120° a = 30°
a = CONDUCTION ANGLE 1.0
180°
dc
105 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1.0 2.0 3.0 4.0
IT(RMS), RMS ON–STATE CURRENT (AMPS) IT(RMS), RMS ON–STATE CURRENT (AMPS)

Figure 1. RMS Current Derating Figure 2. On–State Power Dissipation

I T, INSTANTANEOUS ON–STATE CURRENT (AMPS)

100 1.0

r(t) , TRANSIENT RESISTANCE (NORMALIZED)

TYPICAL @ TJ = 25°C

MAXIMUM @ TJ = 125°C
10

0.1
MAXIMUM @ TJ = 25°C ZqJC(t) = RqJC(t)Sr(t)
1.0

0.1 0.01
0 1.0 2.0 3.0 4.0 5.0 0.1 1.0 10 100 1000 10 k
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) t, TIME (ms)

Figure 3. On–State Characteristics Figure 4. Transient Thermal Response

60 1.2
VGT, GATE TRIGGER VOLTAGE(VOLTS)
I GT, GATE TRIGGER CURRENT (mA)

50 1.0

Q2 Q1
40 0.8

Q3
30 0.6
Q2 Q3

20 0.4
Q1

10 0.2

0 0
–50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 5. Typical Gate Trigger Current versus Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature Junction Temperature

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60 120

50 100
IH , HOLDING CURRENT (mA)

IL, LATCHING CURRENT (mA)

Q2
40 MT2 POSITIVE 80

30 60
Q1
20 40
MT2 NEGATIVE
Q3
10 20

0 0
–50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Typical Holding Current versus Figure 8. Typical Latching Current versus
Junction Temperature Junction Temperature

10 K 15 K
TJ = 125°C TJ = 125°C

8.0 K VPK = 400 V

STATIC dv/dt (V/ ms)

STATIC dv/dt (V/ ms)

10 K
6.0 K 600 V
VPK = 400 V

600 V 800 V
4.0 K 800 V
5.0 K

2.0 K

0 0
100 1000 10 K 100 1000 10 K
RG–MT1, GATE–MT1 RESISTANCE (OHMS) RG–MT1, GATE–MT1 RESISTANCE (OHMS)

Figure 9. Exponential Static dv/dt versus Figure 10. Exponential Static dv/dt versus
Gate–MT1 Resistance, MT2(+) Gate–MT1 Resistance, MT2(–)

10 K 14 K

12 K
8.0 K TJ = 100°C GATE OPEN GATE OPEN
10 K TJ = 100°C
STATIC dv/dt (V/ ms)
STATIC dv/dt (V/ ms)

6.0 K 8.0 K
110°C 110°C
6.0 K
4.0 K
4.0 K 125°C
125°C
2.0 K
2.0 K

0 0
400 500 600 700 800 400 500 600 700 800
VPK, PEAK VOLTAGE (VOLTS) VPK, PEAK VOLTAGE (VOLTS)

Figure 11. Exponential Static dv/dt versus Figure 12. Exponential Static dv/dt versus
Peak Voltage, MT2(+) Peak Voltage, MT2(–)

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10 K 14 K

12 K GATE OPEN
8.0 K GATE OPEN VPK = 400 V
VPK = 400 V 10 K
STATIC dv/dt (V/ ms)

STATIC dv/dt (V/ ms)

6.0 K
8.0 K 600 V
600 V

4.0 K 6.0 K
800 V
800 V
4.0 K
2.0 K
2.0 K

0 0
100 105 110 115 120 125 100 105 110 115 120 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 13. Typical Exponential Static dv/dt Figure 14. Typical Exponential Static dv/dt
versus Junction Temperature, MT2(+) versus Junction Temperature, MT2(–)

100
VPK = 400 V
dv/dt(c), CRITICAL RATE OF RISE OF
COMMUTATING VOLTAGE (V/ ms)

TJ = 125°C 100°C 75°C

10

1
f=
tw 2 tw
6f I
(di/dt)c = TM
VDRM 1000

1.0
0 5.0 10 15 20 25 30 35
di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

Figure 15. Critical Rate of Rise of

Commutating Voltage

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 MAC4DCM, MAC4DCN

LL 1N4007
200 VRMS
ADJUST FOR MEASURE
ITM, 60 Hz VAC I

TRIGGER CONTROL
CHARGE
TRIGGER CONTROL –
CHARGE 200 V
+
MT2
1N914 51 W
NON-POLAR MT1
CL G

Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.

Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c

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326
 MAC4DCM, MAC4DCN

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the interface between the board and the package. With the
total design. The footprint for the semiconductor packages correct pad geometry, the packages will self align when
must be the correct size to insure proper solder connection subjected to a solder reflow process.

0.165 0.118
4.191 3.0
0.100
2.54
0.063
1.6
0.190 0.243
4.826 6.172

inches
mm
DPAK

http://onsemi.com
327
MAC4DHM
Preferred Device

Sensitive Gate Triacs

Silicon Bidirectional Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
http://onsemi.com
• Small Size Surface Mount DPAK Package
• Passivated Die for Reliability and Uniformity
TRIACS
• Four–Quadrant Triggering
4.0 AMPERES RMS
• Blocking Voltage to 600 V
• On–State Current Rating of 4.0 Amperes RMS at 93°C 600 VOLTS
• Low Level Triggering and Holding Characteristics
• Device Marking: Device Type with “M’’ truncated, e.g.,
MAC4DHM: AC4DHM, Date Code MT2 MT1
G

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit 4
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to 110°C, Sine Wave, VRRM 4
50 to 60 Hz, Gate Open)
MAC4DHM 600 1 1 2
2
On–State RMS Current IT(RMS) 4.0 Amps 3 3
(Full Cycle Sine Wave, 60 Hz, D–PAK D–PAK
TC = 93°C) CASE 369 CASE 369A
STYLE 6 STYLE 6
Peak Non-Repetitive Surge Current ITSM 40 Amps
(One Full Cycle, 60 Hz, TJ = 110°C)
PIN ASSIGNMENT
Circuit Fusing Consideration I2t 6.6 A2sec
1 Main Terminal 1
(t = 8.3 msec)
2 Main Terminal 2
Peak Gate Power PGM 0.5 Watts
(Pulse Width ≤ 10 msec, TC = 93°C) 3 Gate

Average Gate Power PG(AV) 0.1 Watts 4 Main Terminal 2

(t = 8.3 msec, TC = 93°C)
Peak Gate Current IGM 0.2 Amps ORDERING INFORMATION
(Pulse Width ≤ 10 msec, TC = 93°C)
Device Package Shipping
Peak Gate Voltage VGM 5.0 Volts
(Pulse Width ≤ 10 msec, TC = 93°C) MAC4DHMT4 DPAK 369A 16mm Tape
Operating Junction Temperature Range TJ – 40 to 110 °C and Reel
(2.5K/Reel)
Storage Temperature Range Tstg – 40 to 150 °C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking MAC4DHM–1 DPAK 369 75 Units/Rail
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded. Preferred devices are recommended choices for future use
and best overall value.

 Semiconductor Components Industries, LLC, 2000 328 Publication Order Number:

May, 2000 – Rev. 3 MAC4DHM/D
 MAC4DHM

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance — Junction to Case RqJC 3.5 °C/W
Thermal Resistance — Junction to Ambient RqJA 88
Thermal Resistance — Junction to Ambient(1) RqJA 80
Maximum Lead Temperature for Soldering Purposes(2) TL 260 °C
(1) Surface mounted on minimum recommended pad size.
(2) 1/8″ from case for 10 seconds.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM, mA
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C IRRM — — 0.01
TJ = 110°C — — 2.0
ON CHARACTERISTICS
Peak On–State Voltage(1) VTM Volts
(ITM = ± 6.0 A) — 1.3 1.6
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W) IGT mA
MT2(+), G(+) — 1.8 5.0
MT2(+), G(–) — 2.1 5.0
MT2(–), G(–) — 2.4 5.0
MT2(–), G(+) — 4.2 10
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W) VGT Volts
MT2(+), G(+) 0.5 0.62 1.3
MT2(+), G(–) 0.5 0.57 1.3
MT2(–), G(–) 0.5 0.65 1.3
MT2(–), G(+) 0.5 0.74 1.3
Gate Non–Trigger Voltage (Continuous dc) VGD 0.1 0.4 — Volts
W
(VD = 12 V, RL = 100 , TJ = 110°C)
All Four Quadrants
Holding Current IH mA
(VD = 12 V, Gate Open, Initiating Current = ± 200 mA) — 1.5 15
Latching Current IL mA
MT2(+), G(+) (VD = 12 V, IG = 5.0 mA) — 1.75 10
MT2(+), G(–) (VD = 12 V, IG = 5.0 mA) — 5.2 10
MT2(–), G(–) (VD = 12 V, IG = 5.0 mA) — 2.1 10
MT2(–), G(+) (VD = 12 V, IG = 10 mA) — 2.2 10

DYNAMIC CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Rate of Change of Commutating Current di/dt(c) A/ms
m
(VD = 200 V, ITM = 1.8 A, Commutating dv/dt = 1.0 V/ sec, — 3.0 —
m
TJ = 110°C, f = 250 Hz, CL = 5.0 fd, LL = 80 mH, RS = 56 , W
m
CS = 0.03 fd) With snubber see Figure 11
Critical Rate of Rise of Off–State Voltage dv/dt m
V/ s
(VD = 0.67 X Rated VDRM, Exponential Waveform, 20 — —
Gate Open, TJ = 110°C)
(1) Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.

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329
 MAC4DHM

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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 MAC4DHM

110 6.0

P(AV) , AVERAGE POWER DISSIPATION (WATTS)

TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C)
180° dc

5.0
α 120°
105 a = 30° α
60° 90°
4.0
90° a = CONDUCTION ANGLE
100 3.0
α
α 2.0 60°
95 120° a = 30°
a = CONDUCTION ANGLE 1.0
180°
dc
90 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
IT(RMS), RMS ON–STATE CURRENT (AMPS) IT(RMS), RMS ON–STATE CURRENT (AMPS)

Figure 1. RMS Current Derating Figure 2. On–State Power Dissipation

I T, INSTANTANEOUS ON–STATE CURRENT (AMPS)

100 1.0

r(t) , TRANSIENT RESISTANCE (NORMALIZED)

TYPICAL @ TJ = 25°C
10 MAXIMUM @ TJ = 110°C

0.1
ZqJC(t) = RqJC(t)Sr(t)
1.0

MAXIMUM @ TJ = 25°C
0.1 0.01
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.1 1.0 10 100 1000 10 K
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) t, TIME (ms)

Figure 3. On–State Characteristics Figure 4. Transient Thermal Response

8.0 1.0
VGT, GATE TRIGGER VOLTAGE (VOLTS)

Q4
7.0
I GT, GATE TRIGGER CURRENT (mA)

Q4 Q1
6.0 0.8

5.0 Q2
Q3
Q3
4.0 0.6
Q2
3.0
Q1
2.0 0.4

1.0
0 0.2
–40 –25 –10 5.0 20 35 50 65 80 95 110 –40 –25 –10 5.0 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 5. Typical Gate Trigger Current versus Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature Junction Temperature

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331
 MAC4DHM

5.0 12

10
4.0
IH , HOLDING CURRENT (mA)

IL, LATCHING CURRENT (mA)

8.0
3.0 Q2
MT2 NEGATIVE 6.0
2.0
4.0
MT2 POSITIVE Q4
1.0
2.0 Q1
Q3
0 0
–40 –25 –10 5.0 20 35 50 65 80 95 110 –40 –25 –10 5.0 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Typical Holding Current versus Figure 8. Typical Latching Current versus
Junction Temperature Junction Temperature

40 10
VD = 400 V VPK = 400 V

dv/dt(c), CRITICAL RATE OF RISE OF

35 TJ = 110°C
COMMUTATING VOLTAGE (V/ ms)
30
STATIC dv/dt (V/ ms)

25 MAC4DHM TJ = 110°C 100°C 90°C

1.0
20

1
15 f=
tw 2 tw
6f I
10 (di/dt)c = TM
VDRM 1000

5 0.1
100 1000 10 K 0 1.0 2.0 3.0 4.0 5.0 6.0
GATE–MT1 RESISTANCE (OHMS) di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

Figure 9. Minimum Exponential Static dv/dt Figure 10. Typical Critical Rate of Rise of
versus Gate–MT1 Resistance Commutating Voltage

LL 1N4007
200 VRMS
ADJUST FOR MEASURE
ITM, 60 Hz VAC RS
I
TRIGGER CONTROL

CHARGE
TRIGGER CONTROL –
CHARGE 200 V
CS ADJUST FOR +
MT2 di/dt(c)
1N914 51 W
NON-POLAR MT1
CL G

Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.

Figure 11. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c

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332
 MAC4DHM

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the interface between the board and the package. With the
total design. The footprint for the semiconductor packages correct pad geometry, the packages will self align when
must be the correct size to insure proper solder connection subjected to a solder reflow process.

0.165 0.118
4.191 3.0
0.100
2.54
0.063
1.6
0.190 0.243
4.826 6.172

inches
mm
DPAK

http://onsemi.com
333
MAC4DLM
Preferred Device

Sensitive Gate Triacs

Silicon Bidirectional Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
http://onsemi.com
• Small Size Surface Mount DPAK Package
• Passivated Die for Reliability and Uniformity
TRIACS
• Four–Quadrant Triggering
4.0 AMPERES RMS
• Blocking Voltage to 600 V
• On–State Current Rating of 4.0 Amperes RMS at 93°C 600 VOLTS
• Low Level Triggering and Holding Characteristics
• Device Marking: Device Type with “M’’ truncated, e.g.,
MAC4DLM: AC4DLM, Date Code MT2 MT1
G

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit 4
Peak Repetitive Off–State Voltage (1) VDRM, Volts
(TJ = –40 to 110°C, Sine Wave, VRRM 4
50 to 60 Hz, Gate Open)
MAC4DLM 600 1 1 2
2
On–State RMS Current IT(RMS) 4.0 Amps 3 3
(Full Cycle Sine Wave, 60 Hz, D–PAK D–PAK
TC = 93°C) CASE 369 CASE 369A
STYLE 6 STYLE 6
Peak Non-Repetitive Surge Current ITSM 40 Amps
(One Full Cycle, 60 Hz, TJ = 110°C)
PIN ASSIGNMENT
Circuit Fusing Consideration I2t 6.6 A2sec
1 Main Terminal 1
(t = 8.3 msec)
2 Main Terminal 2
Peak Gate Power PGM 0.5 Watts
(Pulse Width ≤ 10 msec, TC = 93°C) 3 Gate

Average Gate Power PG(AV) 0.1 Watts 4 Main Terminal 2

(t = 8.3 msec, TC = 93°C)
Peak Gate Current IGM 0.2 Amps ORDERING INFORMATION
(Pulse Width ≤ 10 msec, TC = 93°C)
Device Package Shipping
Peak Gate Voltage VGM 5.0 Volts
(Pulse Width ≤ 10 msec, TC = 93°C) MAC4DLMT4 DPAK 369A 16mm Tape
Operating Junction Temperature Range TJ – 40 to 110 °C and Reel
(2.5K/Reel)
Storage Temperature Range Tstg – 40 to 150 °C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking MAC4DLM–1 DPAK 369 75 Units/Rail
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
Preferred devices are recommended choices for future use
and best overall value.

 Semiconductor Components Industries, LLC, 2000 334 Publication Order Number:

May, 2000 – Rev. 1 MAC4DLM/D
 MAC4DLM

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance — Junction to Case RqJC 3.5 °C/W
Thermal Resistance — Junction to Ambient RqJA 88
Thermal Resistance — Junction to Ambient (1) RqJA 80
Maximum Lead Temperature for Soldering Purposes (2) TL 260 °C
(1) Surface mounted on minimum recommended pad size.
(2) 1/8″ from case for 10 seconds.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM, mA
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C IRRM — — 0.01
TJ = 110°C — — 2.0
ON CHARACTERISTICS
Peak On–State Voltage (1) VTM Volts
(ITM = ± 6.0 A) — 1.3 1.6
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W) IGT mA
MT2(+), G(+) — 1.8 3.0
MT2(+), G(–) — 2.1 3.0
MT2(–), G(–) — 2.4 3.0
MT2(–), G(+) — 4.2 5.0
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W) VGT Volts
MT2(+), G(+) 0.5 0.62 1.3
MT2(+), G(–) 0.5 0.57 1.3
MT2(–), G(–) 0.5 0.65 1.3
MT2(–), G(+) 0.5 0.74 1.3
Gate Non–Trigger Voltage VGD Volts
W
(VD = 12 V, RL = 100 , TJ = 110°C)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–); MT2(–), G(+) 0.1 0.4 —
Holding Current IH mA
(VD = 12 V, Gate Open, Initiating Current = ± 200 mA) — 1.5 15
Latching Current IL mA
MT2(+), G(+) (VD = 12 V, IG = 5.0 mA) — 1.75 10
MT2(+), G(–) (VD = 12 V, IG = 5.0 mA) — 5.2 10
MT2(–), G(–) (VD = 12 V, IG = 5.0 mA) — 2.1 10
MT2(–), G(+) (VD = 12 V, IG = 10 mA) — 2.2 10

DYNAMIC CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Rate of Change of Commutating Current di/dt(c) A/ms
m
(VD = 200 V, ITM = 1.8 A, Commutating dv/dt = 1.0 V/ sec, — 3.0 —
m
TJ = 110°C, f = 250 Hz, CL = 5.0 fd, LL = 80 mH, RS = 56 , W
m
CS = 0.03 fd) With snubber see Figure 11
Critical Rate of Rise of Off–State Voltage dv/dt m
V/ s
(VD = 0.67 X Rated VDRM, Exponential Waveform, 10 — —
Gate Open, TJ = 110°C)
(1) Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.

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335
 MAC4DLM

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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 MAC4DLM

110 6.0

P(AV) , AVERAGE POWER DISSIPATION (WATTS)

TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C)
180° dc

5.0
α 120°
105 a = 30° α
60° 90°
4.0
90° a = CONDUCTION ANGLE
100 3.0
α
α 2.0 60°
95 120° a = 30°
a = CONDUCTION ANGLE 1.0
180°
dc
90 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
IT(RMS), RMS ON–STATE CURRENT (AMPS) IT(RMS), RMS ON–STATE CURRENT (AMPS)

Figure 1. RMS Current Derating Figure 2. On–State Power Dissipation

I T, INSTANTANEOUS ON–STATE CURRENT (AMPS)

100 1.0

r(t) , TRANSIENT RESISTANCE (NORMALIZED)

TYPICAL @ TJ = 25°C
10 MAXIMUM @ TJ = 110°C

0.1
ZqJC(t) = RqJC(t)Sr(t)
1.0

MAXIMUM @ TJ = 25°C
0.1 0.01
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.1 1.0 10 100 1000 10 K
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) t, TIME (ms)

Figure 3. On–State Characteristics Figure 4. Transient Thermal Response

8.0 1.0
VGT, GATE TRIGGER VOLTAGE (VOLTS)

Q4
7.0
I GT, GATE TRIGGER CURRENT (mA)

Q4 Q1
6.0 0.8

5.0 Q2
Q3
Q3
4.0 0.6
Q2
3.0
Q1
2.0 0.4

1.0
0 0.2
–40 –25 –10 5.0 20 35 50 65 80 95 110 –40 –25 –10 5.0 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 5. Typical Gate Trigger Current versus Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature Junction Temperature

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 MAC4DLM

5.0 12

10
4.0
IH , HOLDING CURRENT (mA)

IL, LATCHING CURRENT (mA)

8.0
3.0 Q2
MT2 NEGATIVE 6.0
2.0
4.0
MT2 POSITIVE Q4
1.0
2.0 Q1
Q3
0 0
–40 –25 –10 5.0 20 35 50 65 80 95 110 –40 –25 –10 5.0 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Typical Holding Current versus Figure 8. Typical Latching Current versus
Junction Temperature Junction Temperature

40 10
VD = 400 V VPK = 400 V

dv/dt(c), CRITICAL RATE OF RISE OF

35 TJ = 110°C
COMMUTATING VOLTAGE (V/ ms)
30
STATIC dv/dt (V/ ms)

25 TJ = 110°C 100°C 90°C

1.0
20

1
15 MAC4DLM f=
tw 2 tw
6f I
10 (di/dt)c = TM
VDRM 1000

5.0 0.1
100 1000 10 K 0 1.0 2.0 3.0 4.0 5.0 6.0
RGK, GATE–MT1 RESISTANCE (OHMS) di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

Figure 9. Minimum Exponential Static dv/dt Figure 10. Critical Rate of Rise of
versus Gate–MT1 Resistance Commutating Voltage

LL 1N4007
200 VRMS
ADJUST FOR MEASURE
ITM, 60 Hz VAC RS
I
TRIGGER CONTROL

CHARGE
TRIGGER CONTROL –
CHARGE 200 V
CS ADJUST FOR +
MT2 di/dt(c)
1N914 51 W
NON-POLAR MT1
CL G

Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.

Figure 11. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c

http://onsemi.com
338
 MAC4DLM

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the interface between the board and the package. With the
total design. The footprint for the semiconductor packages correct pad geometry, the packages will self align when
must be the correct size to insure proper solder connection subjected to a solder reflow process.

0.165 0.118
4.191 3.0
0.100
2.54
0.063
1.6
0.190 0.243
4.826 6.172

inches
mm
DPAK

http://onsemi.com
339
MAC4DSM, MAC4DSN
Preferred Device

Triacs
Silicon Bidirectional Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
http://onsemi.com
• Small Size Surface Mount DPAK Package
• Passivated Die for Reliability and Uniformity
TRIACS
• Blocking Voltage to 800 V
4.0 AMPERES RMS
• On–State Current Rating of 4.0 Amperes RMS at 108°C
• Low IGT — 10 mA Maximum in 3 Quadrants 600 thru 800 VOLTS
• High Immunity to dv/dt — 50 V/ms at 125°C
• Device Marking: Device Type with “M’’ truncated, e.g.,
MAC4DSM: AC4DSM, Date Code MT2 MT1
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
4
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to 125°C, Sine Wave, VRRM
50 to 60 Hz, Gate Open) 4
MAC4DSM 600
MAC4DSN 800 1 1 2
2
3 3
On–State RMS Current IT(RMS) 4.0 Amps
(Full Cycle Sine Wave, 60 Hz, D–PAK D–PAK
TC = 108°C) CASE 369 CASE 369A
STYLE 6 STYLE 6
Peak Non-Repetitive Surge Current ITSM 40 Amps
(One Full Cycle Sine Wave, 60 Hz,
PIN ASSIGNMENT
TJ = 125°C)
1 Main Terminal 1
Circuit Fusing Consideration I2t 6.6 A2sec
(t = 8.3 msec) 2 Main Terminal 2
3 Gate
Peak Gate Power PGM 0.5 Watt
(Pulse Width ≤ 10 msec, TC = 108°C) 4 Main Terminal 2
Average Gate Power PG(AV) 0.1 Watt
(t = 8.3 msec, TC = 108°C)
ORDERING INFORMATION
Peak Gate Current IGM 0.2 Amp
(Pulse Width ≤ 10 msec, TC = 108°C) Device Package Shipping

Peak Gate Voltage VGM 5.0 Volts MAC4DSMT4 DPAK 369A 16mm Tape
(Pulse Width ≤ 10 msec, TC = 108°C) and Reel
(2.5K/Reel)
Operating Junction Temperature Range TJ – 40 to 125 °C
Storage Temperature Range Tstg – 40 to 150 °C MAC4DSM–1 DPAK 369 75 Units/Rail
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking MAC4DSNT4 DPAK 369A 16mm Tape
voltages shall not be tested with a constant current source such that the and Reel
voltage ratings of the device are exceeded. (2.5K/Reel)

MAC4DSN–1 DPAK 369 75 Units/Rail

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 2000 340 Publication Order Number:

May, 2000 – Rev. 3 MAC4DSM/D
 MAC4DSM, MAC4DSN

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance — Junction to Case RqJC 3.5 °C/W
Thermal Resistance — Junction to Ambient RqJA 88
Thermal Resistance — Junction to Ambient(1) RqJA 80
Maximum Lead Temperature for Soldering Purposes(2) TL 260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM, mA
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C IRRM — — 0.01
TJ = 125°C — — 2.0
ON CHARACTERISTICS
Peak On–State Voltage(3) VTM — 1.3 1.6 Volts
(ITM = ± 6.0 A)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W) IGT mA
MT2(+), G(+) 2.9 4.0 10
MT2(+), G(–) 2.9 5.0 10
MT2(–), G(–) 2.9 7.0 10
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W) VGT Volts
MT2(+), G(+) 0.5 0.7 1.3
MT2(+), G(–) 0.5 0.65 1.3
MT2(–), G(–) 0.5 0.7 1.3
Gate Non–Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) W VGD 0.2 0.4 — Volts
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–) TJ = 125°C
Holding Current IH 2.0 5.5 15 mA
(VD = 12 V, Gate Open, Initiating Current = ± 200 mA)
Latching Current (VD = 12 V, IG = 10 mA) IL mA
MT2(+), G(+) — 6.0 30
MT2(+), G(–) — 10 30
MT2(–), G(–) — 6.0 30
DYNAMIC CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Rate of Change of Commutating Current di/dt(c) 3.0 4.0 — A/ms
m
(VD = 400 V, ITM = 3.5 A, Commutating dv/dt = 10 V/ sec,
m
Gate Open, TJ = 125°C, f = 500 Hz, CL = 5.0 F, LL = 20 mH,
No Snubber)
See Figure 16
Critical Rate of Rise of Off–State Voltage dv/dt 50 175 — m
V/ s
(VD = 0.67 X Rated VDRM, Exponential Waveform,
Gate Open, TJ = 125°C)
(1) Surface mounted on minimum recommended pad size.
(2) 1/8″ from case for 10 seconds.
(3) Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.

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 MAC4DSM, MAC4DSN

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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125 6.0

P(AV) , AVERAGE POWER DISSIPATION (WATTS)

TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C)
180° dc
5.0
α
120 a = 30° 120°
α
60° 90°
4.0
90° a = CONDUCTION ANGLE
115 3.0
α
α 2.0 60°
110 120° a = 30°
a = CONDUCTION ANGLE 1.0
180°
dc
105 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1.0 2.0 3.0 4.0
IT(RMS), RMS ON–STATE CURRENT (AMPS) IT(RMS), RMS ON–STATE CURRENT (AMPS)

Figure 1. RMS Current Derating Figure 2. On–State Power Dissipation

IT, INSTANTANEOUS ON–STATE CURRENT (AMPS)

100 1.0

r(t) , TRANSIENT RESISTANCE (NORMALIZED)

TYPICAL @ TJ = 25°C

MAXIMUM @ TJ = 125°C
10

0.1
MAXIMUM @ TJ = 25°C ZqJC(t) = RqJC(t)Sr(t)
1.0

0.1 0.01
0 1.0 2.0 3.0 4.0 5.0 0.1 1.0 10 100 1000 10 k
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) t, TIME (ms)

Figure 3. On–State Characteristics Figure 4. Transient Thermal Response

18 1.0
Q3
VGT, GATE TRIGGER VOLTAGE(VOLTS)

16 Q3 Q1
I GT, GATE TRIGGER CURRENT (mA)

14 Q2
0.8
12

10
Q2 0.6
8.0
Q1
6.0
0.4
4.0
2.0
0 0.2
–50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 5. Typical Gate Trigger Current versus Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature Junction Temperature

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 MAC4DSM, MAC4DSN

14 25
Q2
12
20
IH , HOLDING CURRENT (mA)

IL, LATCHING CURRENT (mA)

10
MT2 NEGATIVE Q1
8.0 15
Q3
6.0 MT2 POSITIVE
10
4.0
5.0
2.0

0 0
–50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Typical Holding Current versus Figure 8. Typical Latching Current versus
Junction Temperature Junction Temperature

1000 1200
TJ = 125°C TJ = 125°C
1000 VPK = 400 V
800
STATIC dv/dt (V/ ms)

STATIC dv/dt (V/ ms)

800
600
600
400 VPK = 400 V
600 V
400
600 V
200
800 V 200
800 V
0 0
100 1000 10 k 100 1000 10 k
RG–MT1, GATE–MT1 RESISTANCE (OHMS) RG–MT1, GATE–MT1 RESISTANCE (OHMS)

Figure 9. Exponential Static dv/dt versus Figure 10. Exponential Static dv/dt versus
Gate–MT1 Resistance, MT2(+) Gate–MT1 Resistance, MT2(–)

800 2000

GATE OPEN 1600 GATE OPEN

600 TJ = 100°C
STATIC dv/dt (V/ ms)
STATIC dv/dt (V/ ms)

TJ = 100°C 1200
400 110°C
110°C
800
125°C
125°C
200
400

0 0
400 500 600 700 800 400 500 600 700 800
VPK, PEAK VOLTAGE (VOLTS) VPK, PEAK VOLTAGE (VOLTS)

Figure 11. Exponential Static dv/dt versus Figure 12. Exponential Static dv/dt versus
Peak Voltage, MT2(+) Peak Voltage, MT2(–)

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800 1600

GATE OPEN 1400 GATE OPEN

600 VPK = 400 V 1200 VPK = 400 V

STATIC dv/dt (V/ ms)

STATIC dv/dt (V/ ms)

1000

400 800
600 V 600 V
600

200 400
800 V 200
800 V
0 0
100 105 110 115 120 125 100 105 110 115 120 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 13. Typical Exponential Static dv/dt Figure 14. Typical Exponential Static dv/dt
versus Junction Temperature, MT2(+) versus Junction Temperature, MT2(–)

100
VPK = 400 V
dv/dt(c), CRITICAL RATE OF RISE OF
COMMUTATING VOLTAGE (V/ ms)

TJ = 125°C 100°C 75°C

10

1
f=
tw 2 tw
6f I
(di/dt)c = TM
VDRM 1000

1.0
0 5.0 10 15 20
di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

Figure 15. Critical Rate of Rise of

Commutating Voltage

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LL 1N4007
200 VRMS
ADJUST FOR MEASURE
ITM, 60 Hz VAC I

TRIGGER CONTROL
CHARGE
TRIGGER CONTROL –
CHARGE 200 V
+
MT2
1N914 51 W
NON-POLAR MT1
CL G

Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.

Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c

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 MAC4DSM, MAC4DSN

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the interface between the board and the package. With the
total design. The footprint for the semiconductor packages correct pad geometry, the packages will self align when
must be the correct size to insure proper solder connection subjected to a solder reflow process.

0.165 0.118
4.191 3.0
0.100
2.54
0.063
1.6
0.190 0.243
4.826 6.172

inches
mm
DPAK

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347
MAC4M, MAC4N
Preferred Device

Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
• Blocking Voltage to 800 Volts http://onsemi.com
• On-State Current Rating of 4.0 Amperes RMS at 100°C
• Uniform Gate Trigger Currents in Three Modes TRIACS
• High Immunity to dv/dt — 500 V/µs minimum at 125°C 4 AMPERES RMS
• Minimizes Snubber Networks for Protection
600 thru 800 VOLTS
• High Surge Current Capability – 40 Amperes
• Industry Standard TO-220AB Package
• High Commutating di/dt — 6.0 A/ms minimum at 125°C
• Operational in Three Quadrants: Q1, Q2, and Q3 MT2 MT1
• Device Marking: Logo, Device Type, e.g., MAC4M, Date Code G

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit
4
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to 125°C, Sine Wave, VRRM
50 to 60 Hz, Gate Open)
MAC4M 600
MAC4N 800
On-State RMS Current IT(RMS) 4.0 Amps
1
(Full Cycle Sine Wave, 60 Hz, 2
TC = 100°C) 3

Peak Non-Repetitive Surge Current ITSM 40 Amps TO–220AB

(One Full Cycle Sine Wave, 60 Hz, CASE 221A
TJ = 125°C) STYLE 4
Circuit Fusing Consideration I2t 6.6 A2sec
(t = 8.33 ms) PIN ASSIGNMENT
1 Main Terminal 1
Peak Gate Power PGM 0.5 Watt
(Pulse Width ≤ 1.0 µs, TC = 100°C) 2 Main Terminal 2
Average Gate Power PG(AV) 0.1 Watt 3 Gate
(t = 8.3 ms, TC = 100°C) 4 Main Terminal 2
Operating Junction Temperature Range TJ – 40 to °C
+125
ORDERING INFORMATION
Storage Temperature Range Tstg – 40 to °C
+150 Device Package Shipping
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking MAC4M TO220AB 50 Units/Rail
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded. MAC4N TO220AB 50 Units/Rail

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 1999 348 Publication Order Number:

February, 2000 – Rev. 1 MAC4M/D
 MAC4M, MAC4N

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance — Junction to Case RθJC 2.2 °C/W
— Junction to Ambient RθJA 62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM, mA
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C IRRM — — 0.01
TJ = 125°C — — 2.0

ON CHARACTERISTICS
Peak On-State Voltage(1) VTM — 1.3 1.6 V
(ITM = ± 6.0 A)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) IGT mA
MT2(+), G(+) 8.0 12 35
MT2(+), G(–) 8.0 16 35
MT2(–), G(–) 8.0 21 35
Holding Current IH 6.0 20 35 mA
(VD = 12 V, Gate Open, Initiating Current = ±200 mA)
Latching Current (VD = 12 V, IG = 35 mA) IL mA
MT2(+), G(+) — 25 60
MT2(+), G(–) — 40 80
MT2(–), G(–) — 20 60
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) VGT V
MT2(+), G(+) 0.5 0.8 1.3
MT2(+), G(–) 0.5 0.8 1.3
MT2(–), G(–) 0.5 0.8 1.3
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current (di/dt)c 6.0 8.4 — A/ms
(VD = 400 V, ITM = 4.0 A, Commutating dv/dt = 18 V/µs, Gate Open,
TJ = 125°C, f = 250 Hz, CL = 5.0 µF, LL = 20 mH, No Snubber)
Critical Rate of Rise of Off-State Voltage dv/dt 500 1500 — V/µs
(VD = 0.67 x Rated VDRM, Exponential Waveform,
Gate Open, TJ = 125°C)
Repetitive Critical Rate of Rise of On-State Current di/dt — — 10 A/µs
IPK = 50 A; PW = 40 µsec; diG/dt = 200 mA/µsec; f = 60 Hz
(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

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 MAC4M, MAC4N

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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100 1.1
IGT, GATE TRIGGER CURRENT (mA)

VGT, GATE TRIGGER VOLTAGE (VOLTS)

1.0 Q3
Q2
Q3
0.9

0.8 Q2
10 Q1
Q1
0.7

0.6

0.5

1 0.4
– 40 – 25 – 10 5 20 35 50 65 80 95 110 125 – 40 – 25 – 10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 1. Typical Gate Trigger Current Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature versus Junction Temperature

100 100
Q2

IH, HOLDING CURRENT (mA)

IL , LATCHING CURRENT (mA)

Q1
MT2 Positive
Q3

MT2 Negative
10 10

1 1
– 40 – 25 – 10 5 20 35 50 65 80 95 110 125 – 40 – 25 – 10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical Latching Current Figure 4. Typical Holding Current

versus Junction Temperature versus Junction Temperature
P(AV), AVERAGE POWER DISSIPATION (WATTS)

125 6
DC
TC , CASE TEMPERATURE (°C)

5
120 180°
4 120°
90°
30° 60°
115 3
60° 30°
90° 2
110 120°
180° 1
DC
105 0
0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4
IT(RMS), RMS ON-STATE CURRENT (AMPS) IT(AV), AVERAGE ON-STATE CURRENT (AMPS)

Figure 5. Typical RMS Current Derating Figure 6. On-State Power Dissipation

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100 1

r(t), TRANSIENT THERMAL RESISTANCE

IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) Maximum @ TJ = 25°C

Typical @ TJ = 25°C

(NORMALIZED)
Maximum @ TJ = 125°C
10
0.1

1
0.01
0.1 1 10 100 1000 10000
t, TIME (ms)

Figure 8. Typical Thermal Response

0.1
0 1 2 3 4
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

Figure 7. Typical On-State Characteristics

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352
MAC4SM, MAC4SN
Preferred Device

Sensitive Gate Triacs

Silicon Bidirectional Thyristors
Designed for industrial and consumer applications for full wave
control of ac loads such as appliance controls, heater controls, motor
controls, and other power switching applications.
http://onsemi.com
• Sensitive Gate Allows Triggering by Microcontrollers and other
Logic Circuits
TRIACS
• High Immunity to dv/dt — 50 V/ms Minimum at 125_C
• Commutating di/dt — 3.0 A/ms Minimum at 125_C 4 AMPERES RMS
• Minimum and Maximum Values of IGT, VGT and IH Specified for 600 thru 800 VOLTS
Ease of Design
• On-State Current Rating of 4 Amperes RMS at 100_C
• High Surge Current Capability — 40 Amperes MT2 MT1
• Blocking Voltage to 800 Volts G
• Rugged, Economical TO220AB Package
• Operational in Three Quadrants: Q1, Q2, and Q3
• Device Marking: Logo, Device Type, e.g., MAC4SM, Date Code

4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to 125°C, Sine Wave, VRRM
50 to 60 Hz, Gate Open)
1
MAC4SM 600 2
MAC4SN 800 3

On-State RMS Current IT(RMS) 4.0 Amps TO–220AB

(Full Cycle Sine Wave, 60 Hz, CASE 221A
TC = 100°C) STYLE 4
Peak Non-Repetitive Surge Current ITSM 40 Amps
(One Full Cycle, 60 Hz, TJ = 125°C) PIN ASSIGNMENT
1 Main Terminal 1
Circuit Fusing Consideration I2t 6.6 A2sec
(t = 8.33 ms) 2 Main Terminal 2
Peak Gate Power PGM 0.5 Watt 3 Gate
(Pulse Width ≤ 1.0 µs, TC = 100°C) 4 Main Terminal 2
Average Gate Power PG(AV) 0.1 Watt
(t = 8.3 ms, TC = 100°C)
ORDERING INFORMATION
Operating Junction Temperature Range TJ – 40 to °C
+125 Device Package Shipping
Storage Temperature Range Tstg – 40 to °C MAC4SM TO220AB 50 Units/Rail
+150
MAC4SN TO220AB 50 Units/Rail
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded. Preferred devices are recommended choices for future use
and best overall value.

 Semiconductor Components Industries, LLC, 1999 353 Publication Order Number:

February, 2000 – Rev. 1 MAC4SM/D
 MAC4SM, MAC4SN

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance — Junction to Case RθJC 2.2 °C/W
— Junction to Ambient RθJA 62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM, mA
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C IRRM — — 0.01
TJ = 125°C — — 2.0

ON CHARACTERISTICS
Peak On-State Voltage(1) VTM — 1.3 1.6 V
(ITM = ± 6.0 A)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) IGT mA
MT2(+), G(+) 2.9 4.0 10
MT2(+), G(–) 2.9 4.7 10
MT2(–), G(–) 2.9 6.0 10
Holding Current IH 2.0 5.0 15 mA
(VD = 12 V, Gate Open, Initiating Current = ±200 mA)
Latching Current (VD = 12 V, IG = 10 mA) IL mA
MT2(+), G(+) — 6.0 30
MT2(+), G(–) — 15 30
MT2(–), G(–) — 6.0 30
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) VGT V
MT2(+), G(+) 0.5 0.7 1.3
MT2(+), G(–) 0.5 .65 1.3
MT2(–), G(–) 0.5 0.7 1.3
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current (di/dt)c 3.0 4.0 — A/ms
(VD = 400 V, ITM = 3.5 A, Commutating dv/dt = 10 V/µs, Gate Open,
TJ = 125°C, f = 500 Hz, CL = 5.0 µF, LL = 20 mH, No Snubber)
Critical Rate of Rise of Off-State Voltage dv/dt 50 150 — V/µs
(VD = 0.67 x Rated VDRM, Exponential Waveform,
Gate Open, TJ = 125°C)
Repetitive Critical Rate of Rise of On-State Current di/dt — — 10 A/µs
IPK = 50 A; PW = 40 µsec; diG/dt = 200 mA/µsec; f = 60 Hz
(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

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 MAC4SM, MAC4SN

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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100 1.0
IGT, GATE TRIGGER CURRENT (mA)

VGT, GATE TRIGGER VOLTAGE (VOLTS)

0.9

0.8

Q2 0.7
10 Q3
0.6
Q2 Q3
Q1 0.5
Q1
0.4

1 0.3
– 40 – 25 – 10 5 20 35 50 65 80 95 110 125 – 40 – 25 – 10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 1. Typical Gate Trigger Current Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature versus Junction Temperature

100 100

IH, HOLDING CURRENT (mA)

IL , LATCHING CURRENT (mA)

Q2

Q1
10 10
Q3 MT2 Positive

MT2 Negative

1 1
– 40 – 25 – 10 5 20 35 50 65 80 95 110 125 – 40 – 25 – 10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical Latching Current Figure 4. Typical Holding Current

versus Junction Temperature versus Junction Temperature
P(AV), AVERAGE POWER DISSIPATION (WATTS)

125 6
DC
TC , CASE TEMPERATURE (°C)

5
120 180°
4 120°
90°
30° 60°
115 3
60° 30°
90° 2
110 120°
180° 1
DC
105 0
0 0.5 1 1.5 2 2.5 3 3.5 4 0 1 2 3 4
IT(RMS), RMS ON-STATE CURRENT (AMP) IT(RMS), RMS ON-STATE CURRENT (AMP)

Figure 5. Typical RMS Current Derating Figure 6. On-State Power Dissipation

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 MAC4SM, MAC4SN

100 1

r(t), TRANSIENT THERMAL RESISTANCE

IT, INSTANTANEOUS ON-STATE CURRENT (AMPS)

Typical @ TJ = 125°C

Maximum @ TJ = 125°C

(NORMALIZED)
10
0.1

1
0.01
0.1 1 10 100 1000 10000
t, TIME (ms)

Figure 8. Typical Thermal Response

0.1
0 0.5 1 1.5 2 2.5 3 3.5
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

Figure 7. Typical On-State Characteristics

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357
MAC8D, MAC8M, MAC8N
Preferred Device

Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
• Blocking Voltage to 800 Volts http://onsemi.com
• On-State Current Rating of 8.0 Amperes RMS at 100°C
• Uniform Gate Trigger Currents in Three Quadrants TRIACS
• High Immunity to dv/dt — 250 V/µs minimum at 125°C 8 AMPERES RMS
• Minimizes Snubber Networks for Protection
400 thru 800 VOLTS
• Industry Standard TO-220AB Package
• High Commutating di/dt — 6.5 A/ms minimum at 125°C
• Device Marking: Logo, Device Type, e.g., MAC8D, Date Code
MT2 MT1
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to 125°C, Sine Wave, VRRM
50 to 60 Hz, Gate Open) 4
MAC8D 400
MAC8M 600
MAC8N 800
On-State RMS Current IT(RMS) 8.0 Amps
(Full Cycle Sine Wave, 60 Hz,
TC = 100°C) 1
2
Peak Non-Repetitive Surge Current ITSM 80 Amps 3
(One Full Cycle Sine Wave, 60 Hz,
TJ = 125°C) TO–220AB
CASE 221A
Circuit Fusing Consideration I2t 26 A2sec STYLE 4
(t = 8.3 ms)
Peak Gate Power PGM 16 Watts PIN ASSIGNMENT
(Pulse Width ≤ 1.0 µs, TC = 80°C)
1 Main Terminal 1
Average Gate Power PG(AV) 0.35 Watt 2 Main Terminal 2
(t = 8.3 ms, TC = 80°C)
3 Gate
Operating Junction Temperature Range TJ – 40 to °C
+125 4 Main Terminal 2

Storage Temperature Range Tstg – 40 to °C

+150 ORDERING INFORMATION
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
Device Package Shipping
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded. MAC8D TO220AB 50 Units/Rail

MAC8M TO220AB 50 Units/Rail

MAC8N TO220AB 50 Units/Rail

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 1999 358 Publication Order Number:

January, 2000 – Rev. 1 MAC8D/D
 MAC8D, MAC8M, MAC8N

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance — Junction to Case RθJC 2.2 °C/W
— Junction to Ambient RθJA 62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM, mA
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C IRRM — — 0.01
TJ = 125°C — — 2.0

ON CHARACTERISTICS
Peak On-State Voltage* VTM — 1.2 1.6 Volts
(ITM = ± 11 A Peak)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) IGT mA
MT2(+), G(+) 5.0 13 35
MT2(+), G(–) 5.0 16 35
MT2(–), G(–) 5.0 18 35
Holding Current IH — 20 40 mA
(VD = 12 V, Gate Open, Initiating Current = ±150 mA)
Latching Current (VD = 24 V, IG = 35 mA) IL mA
MT2(+), G(+); MT2(–), G(–) — 20 50
MT2(+), G(–) — 30 80
Gate Trigger Voltage (VD = 12 V, RL = 100 Ω) VGT Volts
MT2(+), G(+) 0.5 0.69 1.5
MT2(+), G(–) 0.5 0.77 1.5
MT2(–), G(–) 0.5 0.72 1.5
Gate Non–Trigger Voltage (VD = 12 V, RL = 100 Ω, TJ = 125°C) VGD Volts
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–) 0.2 — —

DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current See Figure 10. (di/dt)c 6.5 — — A/ms
(VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/µs,
Gate Open, TJ = 125°C, f = 250 Hz, No Snubber)
CL = 10 µF
LL = 40 mH
Critical Rate of Rise of Off-State Voltage dv/dt 250 — — V/µs
(VD = Rated VDRM, Exponential Waveform,
Gate Open, TJ = 125°C)
*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

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359
 MAC8D, MAC8M, MAC8N

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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 MAC8D, MAC8M, MAC8N

125 12
DC

PAV, AVERAGE POWER (WATTS)

10
TC, CASE TEMPERATURE (°C)

120
180°
α = 120, 90, 60, 30°
8
115 120°

α = 180° 6
110
60°
4
DC 90°
105 α = 30°
2

100 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8
IT(RMS), RMS ON-STATE CURRENT (AMP) IT(RMS), ON-STATE CURRENT (AMP)

Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

100 1

TYPICAL AT
TJ = 25°C

MAXIMUM @ TJ = 125°C
0.1
I T, INSTANTANEOUS ON-STATE CURRENT (AMP)

10
0.01
0.1 1 10 100 1000 1 · 104
t, TIME (ms)

Figure 4. Thermal Response

MAXIMUM @ TJ = 25°C 40
1
35
I H, HOLD CURRENT (mA)

30
MT2 POSITIVE
25

20

15
MT2 NEGATIVE
10

0.1 5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 – 50 – 30 – 10 10 30 50 70 90 110 130
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. On-State Characteristics Figure 5. Hold Current Variation

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361
 MAC8D, MAC8M, MAC8N

100 1
0.95 Q2

VGT, GATE TRIGGER VOLTAGE (VOLT)

IGT, GATE TRIGGER CURRENT (mA)

Q2 0.9
Q3
0.85
Q3 0.8
Q1 075
10 0.7 Q1
0.65
0.6
0.55
0.5
0.45
1 0.4
– 50 – 30 – 10 10 30 50 70 90 110 130 – 50 – 30 – 10 10 30 50 70 90 110 130
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Gate Trigger Current Variation Figure 7. Gate Trigger Voltage Variation
dv/dt , CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE (V/µ s)

5000 100
4.5K

(dv/dt) c , CRITICAL RATE OF RISE OF

COMMUTATING VOLTAGE (V/µ s)
4K
3.5K
MT2 NEGATIVE
3K TJ = 125°C 100°C 75°C
2.5K 10
2K
1.5K 1
f=
tw 2 tw
1K
6f I
MT2 POSITIVE (di/dt)c = TM
500 VDRM 1000

0 1
1 10 100 1000 10 15 20 25 30 35 40 45 50 55 60
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS) (di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

Figure 8. Critical Rate of Rise of Off-State Figure 9. Critical Rate of Rise of

Voltage (Exponential) Commutating Voltage

LL 1N4007
200 VRMS
ADJUST FOR MEASURE
ITM, 60 Hz VAC I
TRIGGER CONTROL

CHARGE
TRIGGER CONTROL –
CHARGE 200 V
+
MT2
1N914 51 W
NON-POLAR MT1
CL G

Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.

Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c

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362
MAC8SD, MAC8SM, MAC8SN
Preferred Device

Sensitive Gate Triacs

Silicon Bidirectional Thyristors
Designed for industrial and consumer applications for full wave
control of ac loads such as appliance controls, heater controls, motor
controls, and other power switching applications.
http://onsemi.com
• Sensitive Gate Allows Triggering by Microcontrollers and other
Logic Circuits
TRIACS
• Uniform Gate Trigger Currents in Three Quadrants; Q1, Q2, and Q3
• High Immunity to dv/dt — 25 V/ms Minimum at 110_C 8 AMPERES RMS
• High Commutating di/dt — 8.0 A/ms Minimum at 110_C 400 thru 800 VOLTS
• Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design
• On-State Current Rating of 8 Amperes RMS at 70_C MT2 MT1
• High Surge Current Capability — 70 Amperes G
• Blocking Voltage to 800 Volts
• Rugged, Economical TO220AB Package
• Device Marking: Logo, Device Type, e.g., MAC8SM, Date Code

4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to 110°C, Sine Wave, VRRM
50 to 60 Hz, Gate Open)
1
MAC8SD 400 2
MAC8SM 600 3
MAC8SN 800
TO–220AB
On-State RMS Current IT(RMS) 8.0 Amps CASE 221A
(Full Cycle Sine Wave, 60 Hz, STYLE 4
TC = 70°C)
Peak Non-Repetitive Surge Current ITSM 70 Amps PIN ASSIGNMENT
(One Full Cycle Sine Wave, 60 Hz, 1 Main Terminal 1
TJ = 110°C)
2 Main Terminal 2
Circuit Fusing Consideration I2t 20 A2sec
3 Gate
(t = 8.3 ms)
4 Main Terminal 2
Peak Gate Power PGM 16 Watts
(Pulse Width ≤ 1.0 µs, TC = 70°C)
Average Gate Power PG(AV) 0.35 Watt ORDERING INFORMATION
(t = 8.3 ms, TC = 70°C)
Device Package Shipping
Operating Junction Temperature Range TJ – 40 to °C
+110 MAC8SD TO220AB 50 Units/Rail

Storage Temperature Range Tstg – 40 to °C MAC8SM TO220AB 50 Units/Rail

+150
MAC8SN TO220AB 50 Units/Rail
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded. Preferred devices are recommended choices for future use
and best overall value.

 Semiconductor Components Industries, LLC, 1999 363 Publication Order Number:

February, 2000 – Rev. 2 MAC8S/D
 MAC8SD, MAC8SM, MAC8SN

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance — Junction to Case RθJC 2.2 °C/W
— Junction to Ambient RθJA 62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM, mA
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C IRRM — — 0.01
TJ = 110°C — — 2.0

ON CHARACTERISTICS
Peak On-State Voltage* (ITM =  11A) VTM — — 1.85 Volts
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) IGT mA
MT2(+), G(+) .8 2.0 5.0
MT2(+), G(–) .8 3.0 5.0
MT2(–), G(–) .8 3.0 5.0
Holding Current (VD = 12V, Gate Open, Initiating Current =  150mA) IH 1.0 3.0 10 mA
Latching Current (VD = 24V, IG = 5mA) IL mA
MT2(+), G(+) 2.0 5.0 15
MT2(–), G(–) 2.0 10 20
MT2(+), G(–) 2.0 5.0 15
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100Ω) VGT Volts
MT2(+), G(+) 0.45 0.62 1.5
MT2(+), G(–) 0.45 0.60 1.5
MT2(–), G(–) 0.45 0.65 1.5
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current di/dt(c) 8.0 10 — A/ms
VD = 400 V, ITM = 3.5 A, Commutating dv/dt = 10 V m/sec,
Gate Open, TJ = 110_C, f = 500 Hz, Snubber: CS = 0.01 mF,
W
RS =15 , See Figure 16.)
Critical Rate of Rise of Off-State Voltage dv/dt 25 75 — V/ s m
(VD = Rate VDRM, Exponential Waveform, RGK = 510 W, TJ = 110_C)
*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

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364
 MAC8SD, MAC8SM, MAC8SN

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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 MAC8SD, MAC8SM, MAC8SN

P(AV), AVERAGE POWER DISSIPATION (WATTS)

T C , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) 110 25

α DC
180°
100 20 α
120°
a = 30 and 60° a = CONDUCTION ANGLE 90°
90 15
60°
α
80 α 10

a = CONDUCTION ANGLE 90° a = 30°

70 180° 5

DC
60 0
0 2 4 6 8 10 12 0 2 4 6 8 10 12
IT(RMS), RMS ON–STATE CURRENT (AMPS) IT(RMS), RMS ON–STATE CURRENT (AMPS)

Figure 1. RMS Current Derating Figure 2. Maximum On–State Power Dissipation

R(t) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)

I T, INSTANTANOUS ON-STATE CURRENT (AMPS)

100 1
Typical @ TJ = 25°C

Maximum @
TJ = 110°C ZqJC(t) = RqJC(t)  r(t)
10

0.1

1
Maximum @
TJ = 25°C

0.1 0.01
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 0.1 1 10 100 1000 1@10 4
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) t, TIME (ms)

Figure 3. On–State Characteristics Figure 4. Transient Thermal Response

10 25
I L , LATCHING CURRENT (mA)
I H , HOLDING CURRENT (mA)

8 20

6 15
MT2 NEGATIVE

4 10 Q3

MT2 POSITIVE
2 5

Q1
0 0
–40 –25 –10 5 20 35 50 65 80 95 110 –40 –25 –10 5 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 5. Typical Holding Current Versus Figure 6. Typical Latching Current Versus
Junction Temperature Junction Temperature

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 MAC8SD, MAC8SM, MAC8SN

14 1
Q1

V GT, GATE TRIGGER VOLTAGE (VOLTS)

IGT, GATE TRIGGER CURRENT (mA)

12 0.9
Q3
10 0.8

8 0.7
Q3
6 0.6 Q3
Q2
4 0.5
Q2
2 0.4 Q1
Q1
0 0.3
–40 –25 –10 5 20 35 50 65 80 95 110 –40 –25 –10 5 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Typical Gate Trigger Current Versus Figure 8. Typical Gate Trigger Voltage Versus
Junction Temperature Junction Temperature

200 130

TJ = 110°C RG – MT1 = 510 W

180
120
VPK = 400 V TJ = 100°C
STATIC dv/dt (V/ mS)
160
STATIC dv/dt (V/ mS)

110
140
600 V
800 V
120 110°C
100

100
90
80 120°C

60 80
100 200 300 400 500 600 700 800 900 1000 400 450 500 550 600 650 700 750 800
RGK, GATE–MT1 RESISTANCE (OHMS) VPK, Peak Voltage (Volts)

Figure 9. Typical Exponential Static dv/dt Versus Figure 10. Typical Exponential Static dv/dt Versus
Gate–MT1 Resistance, MT2(+) Peak Voltage, MT2(+)

130 350

120
VPK = 400 V 300
STATIC dv/dt (V/ mS)
STATIC dv/dt (V/ mS)

110 600 V TJ = 100°C

250
800 V
100
110°C
200
90
RG – MT1 = 510 W
80
150 RG – MT1 = 510 W
70 100
100 105 110 400 450 500 550 600 650 700 750 800
TJ, Junction Temperature (°C) VPK, Peak Voltage (Volts)

Figure 11. Typical Exponential Static dv/dt Versus Figure 12. Typical Exponential Static dv/dt Versus
Junction Temperature, MT2(+) Peak Voltage, MT2(–)

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 MAC8SD, MAC8SM, MAC8SN

350 300

300 VPK = 400 V VPK = 400 V

250
STATIC dv/dt (V/ mS)

STATIC dv/dt (V/ S)

250 600 V

m
600 V
200 800 V 200

800 V
150
RG – MT1 = 510 W 150
100 TJ = 110°C

50 100
100 105 110 100 200 300 400 500 600 700 800 900 1000
TJ, Junction Temperature (°C) RGK, GATE–MT1 RESISTANCE (OHMS)

Figure 13. Typical Exponential Static dv/dt Versus Figure 14. Typical Exponential Static dv/dt Versus
Junction Temperature, MT2(–) Gate–MT1 Resistance, MT2(–)
m (dv/dt)c , CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/ s)

100

VPK = 400 V

90°C

10
100°C
1
f=
2 tw
tw
6f ITM
(di/dt)c =
VDRM
1000 110°C

1
1 5 10 15 20 25 30
(di/dt)c, CRITICAL RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

Figure 15. Critical Rate of Rise of

Commutating Voltage

LL 1N4007
200 VRMS
ADJUST FOR MEASURE
ITM, 60 Hz VAC RS
I
TRIGGER CONTROL

CHARGE
TRIGGER CONTROL –
CHARGE 200 V
CS ADJUST FOR +
MT2 di/dt(c)
1N914 51 W
NON-POLAR MT1
CL G

Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.

Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c

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MAC9D, MAC9M, MAC9N
Preferred Device

Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
• Blocking Voltage to 800 Volts http://onsemi.com
• On-State Current Rating of 8.0 Amperes RMS at 100°C
• Uniform Gate Trigger Currents in Three Quadrants TRIACS
• High Immunity to dv/dt — 500 V/µs minimum at 125°C 8 AMPERES RMS
• Minimizes Snubber Networks for Protection
400 thru 800 VOLTS
• Industry Standard TO-220AB Package
• High Commutating di/dt — 6.5 A/ms minimum at 125°C
• Device Marking: Logo, Device Type, e.g., MAC9D, Date Code
MT2 MT1
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to 125°C, Sine Wave, VRRM
50 to 60 Hz, Gate Open) 4
MAC9D 400
MAC9M 600
MAC9N 800
On-State RMS Current IT(RMS) 8.0 Amps
(Full Cycle Sine Wave, 60 Hz,
TC = 100°C) 1
2
Peak Non-Repetitive Surge Current ITSM 80 Amps 3
(One Full Cycle Sine Wave, 60 Hz,
TJ = 125°C) TO–220AB
CASE 221A
Circuit Fusing Consideration I2t 26 A2sec STYLE 4
(t = 8.3 ms)
Peak Gate Power PGM 16 Watts PIN ASSIGNMENT
(Pulse Width ≤ 1.0 µs, TC = 80°C)
1 Main Terminal 1
Average Gate Power PG(AV) 0.35 Watt 2 Main Terminal 2
(t = 8.3 ms, TC = 80°C)
3 Gate
Operating Junction Temperature Range TJ – 40 to °C
+125 4 Main Terminal 2

Storage Temperature Range Tstg – 40 to °C

+150 ORDERING INFORMATION
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
Device Package Shipping
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded. MAC9D TO220AB 50 Units/Rail

MAC9M TO220AB 50 Units/Rail

MAC9N TO220AB 50 Units/Rail

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 1999 369 Publication Order Number:

February, 2000 – Rev. 2 MAC9/D
 MAC9D, MAC9M, MAC9N

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance — Junction to Case RθJC 2.2 °C/W
— Junction to Ambient RθJA 62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM, mA
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C IRRM — — 0.01
TJ = 125°C — — 2.0

ON CHARACTERISTICS
Peak On-State Voltage* VTM — 1.2 1.6 Volts
(ITM = ± 11 A Peak)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) IGT mA
MT2(+), G(+) 10 16 50
MT2(+), G(–) 10 18 50
MT2(–), G(–) 10 22 50
Holding Current IH — 30 50 mA
(VD = 12 V, Gate Open, Initiating Current = ±150 mA)
Latching Current (VD = 24 V, IG = 50 mA) IL mA
MT2(+), G(+); MT2(–), G(–) — 20 50
MT2(+), G(–) — 30 80
Gate Trigger Voltage (VD = 12 V, RL = 100 Ω) VGT Volts
MT2(+), G(+) 0.5 0.69 1.5
MT2(+), G(–) 0.5 0.77 1.5
MT2(–), G(–) 0.5 0.72 1.5
Gate Non–Trigger Voltage (VD = 12 V, RL = 100 Ω, TJ = 125°C) VGD Volts
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–) 0.2 — —

DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current; See Figure 10. (di/dt)c 6.5 — — A/ms
(VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/µs,
Gate Open, TJ = 125°C, f = 250 Hz, No Snubber)
CL = 10 µF
LL = 40 mH
Critical Rate of Rise of Off-State Voltage dv/dt 500 — — V/µs
(VD = Rated VDRM, Exponential Waveform,
Gate Open, TJ = 125°C)
*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

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 MAC9D, MAC9M, MAC9N

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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 MAC9D, MAC9M, MAC9N

125 12
DC

PAV, AVERAGE POWER (WATTS)

10
TC, CASE TEMPERATURE (°C)

120
180°
α = 120, 90, 60, 30°
8
115 120°

α = 180° 6
110
60°
4
DC 90°
105 α = 30°
2

100 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8
IT(RMS), RMS ON-STATE CURRENT (AMP) IT(RMS), ON-STATE CURRENT (AMP)

Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

100 1

TYPICAL AT
TJ = 25°C

MAXIMUM @ TJ = 125°C 0.1

I T, INSTANTANEOUS ON-STATE CURRENT (AMP)

10
0.01
0.1 1 10 100 1000 1 · 104
t, TIME (ms)

Figure 4. Thermal Response

MAXIMUM @ TJ = 25°C 40
1
35
I H, HOLDING CURRENT (mA)

30

25 MT2 POSITIVE

20

15
MT2 NEGATIVE
10

0.1 5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 – 50 – 30 – 10 10 30 50 70 90 110 130
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. On-State Characteristics Figure 5. Holding Current Variation

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372
 MAC9D, MAC9M, MAC9N

100 1
0.95

VGT, GATE TRIGGER VOLTAGE (VOLT)

IGT, GATE TRIGGER CURRENT (mA)

Q2 0.9
0.85 Q3
Q3 0.8
0.75 Q1
Q1
10 0.7 Q2
0.65
0.6
0.55
0.5
0.45
1 0.4
– 50 – 30 – 10 10 30 50 70 90 110 130 – 50 – 30 – 10 10 30 50 70 90 110 130
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Gate Trigger Current Variation Figure 7. Gate Trigger Voltage Variation
dv/dt , CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE (V/µ s)

5000 100
4.5K
4K (dv/dt) c , CRITICAL RATE OF RISE OF
3.5K COMMUTATING VOLTAGE (V/µ s)
MT2 NEGATIVE
3K TJ = 125°C 100°C 75°C
2.5K 10
2K
1.5K 1
f=
tw 2 tw
1K
6f I
MT2 POSITIVE (di/dt)c = TM
500 VDRM 1000

0 1
1 10 100 1000 10 15 20 25 30 35 40 45 50 55 60
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS) (di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

Figure 8. Critical Rate of Rise of Off-State Voltage Figure 9. Critical Rate of Rise of
(Exponential) Commutating Voltage

LL 1N4007
200 VRMS
ADJUST FOR MEASURE
ITM, 60 Hz VAC I
TRIGGER CONTROL

CHARGE
TRIGGER CONTROL –
CHARGE 200 V
+
MT2
1N914 51 W
NON-POLAR MT1
CL G

Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.

Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c

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373
MAC12D, MAC12M, MAC12N
Preferred Device

Triacs
Silicon Bidirectional Thyristors
Designed for high performance full–wave ac control applications
where high noise immunity and commutating di/dt are required.
• Blocking Voltage to 800 Volts http://onsemi.com
• On–State Current Rating of 12 Amperes RMS at 70°C
• Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3 TRIACS
• High Immunity to dv/dt — 250 V/µs Minimum at 125°C 12 AMPERES RMS
• High Commutating di/dt — 6.5 A/ms Minimum at 125°C
400 thru 800 VOLTS
• Industry Standard TO–220 AB Package
• High Surge Current Capability — 100 Amperes
• Device Marking: Logo, Device Type, e.g., MAC12D, Date Code
MT2 MT1
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to 125°C, Sine Wave, VRRM
50 to 60 Hz, Gate Open) 4
MAC12D 400
MAC12M 600
MAC12N 800
On-State RMS Current IT(RMS) 12 A
(All Conduction Angles; TC = 70°C)
Peak Non-Repetitive Surge Current ITSM 100 A 1
2
(One Full Cycle, 60 Hz, TJ = 125°C) 3

Circuit Fusing Consideration I2t 41 A2sec TO–220AB

(t = 8.33 ms) CASE 221A
Peak Gate Power PGM 16 Watts STYLE 4
(Pulse Width ≤ 1.0 µs, TC = 80°C)
PIN ASSIGNMENT
Average Gate Power PG(AV) 0.35 Watts
(t = 8.3 ms, TC = 80°C) 1 Main Terminal 1

Operating Junction Temperature Range TJ – 40 to °C 2 Main Terminal 2

+125 3 Gate
Storage Temperature Range Tstg – 40 to °C 4 Main Terminal 2
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
ORDERING INFORMATION
voltage ratings of the devices are exceeded. Device Package Shipping

MAC12D TO220AB 50 Units/Rail

MAC12M TO220AB 50 Units/Rail

MAC12N TO220AB 50 Units/Rail

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 1999 374 Publication Order Number:

September, 1999 – Rev. 3 MAC12/D
 MAC12D, MAC12M, MAC12N

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance °C/W
— Junction to Case RθJC 2.2
— Junction to Ambient RθJA 62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current TJ = 25°C IDRM, — — 0.01 mA
(VD = Rated VDRM, VRRM, Gate Open) TJ = 125°C IRRM — — 2.0
ON CHARACTERISTICS
Peak On–State Voltage(1) (ITM = "17 A) VTM — — 1.85 Volts
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) IGT mA
MT2(+), G(+) 5.0 13 35
MT2(+), G(–) 5.0 13 35
MT2(–), G(–) 5.0 13 35
Hold Current (VD = 12 V, Gate Open, Initiating Current = "150 mA) IH — 20 40 mA
Latch Current (VD = 24 V, IG = 35 mA) IL mA
MT2(+), G(+) — 20 50
MT2(+), G(–) — 30 80
MT2(–), G(–) — 20 50
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) VGT Volts
MT2(+), G(+) 0.5 0.78 1.5
MT2(+), G(–) 0.5 0.70 1.5
MT2(–), G(–) 0.5 0.71 1.5
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current (di/dt)c 6.5 — — A/ms
(VD = 400 V, ITM = 4.4A, Commutating dv/dt = 18 V/µs, Gate Open,
TJ = 125°C, f = 250 Hz, No Snubber)
Critical Rate of Rise of Off–State Voltage dv/dt 250 500 — V/µs
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
Repetitive Critical Rate of Rise of On-State Current di/dt — — 10 A/µs
IPK = 50 A; PW = 40 µsec; diG/dt = 200 mA/µsec; f = 60 Hz
(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

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375
 MAC12D, MAC12M, MAC12N

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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 MAC12D, MAC12M, MAC12N

100 1.10

VGT, GATE TRIGGER VOLTAGE (VOLT)

IGT, GATE TRIGGER CURRENT (mA)
1.00 Q3
Q3
Q2 0.90 Q1

Q1 0.80 Q2
10
0.70

0.60

0.50

1 0.40
– 40 – 25 – 10 5 20 35 50 65 80 95 110 125 – 40 – 25 – 10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 1. Typical Gate Trigger Current Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature versus Junction Temperature

100 100
HOLDING CURRENT (mA)

LATCHING CURRENT (mA)

MT2 POSITIVE Q2
Q1

Q3
10 10
MT2 NEGATIVE

1 1
– 40 – 25 – 10 5 20 35 50 65 80 95 110 125 – 40 – 25 – 10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical Holding Current Figure 4. Typical Latching Current

versus Junction Temperature versus Junction Temperature
P(AV), AVERAGE POWER DISSIPATION (WATTS)

125 20
DC
18
180°
120°, 90°, 60°, 30°
TC, CASE TEMPERATURE (°C)

16
110 120°
14
12
95 10
8 90°
180°
6 60°
80 30°
4
DC
2
65 0
0 2 4 6 8 10 12 0 2 4 6 8 10 12
IT(RMS), RMS ON-STATE CURRENT (AMP) IT(AV), AVERAGE ON-STATE CURRENT (AMP)

Figure 5. Typical RMS Current Derating Figure 6. On-State Power Dissipation

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 MAC12D, MAC12M, MAC12N

100 1

r(t), TRANSIENT THERMAL RESISTANCE

I T, INSTANTANEOUS ON-STATE CURRENT (AMP)
TYPICAL @
TJ = 25°C
MAXIMUM @ TJ = 125°C

(NORMALIZED)
10
0.1

MAXIMUM @ TJ = 25°C
1
0.01
0.1 1 10 100 1000 10000
t, TIME (ms)

Figure 8. Typical Thermal Response

0.1
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

Figure 7. Typical On-State Characteristics

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378
MAC12HCD, MAC12HCM,
MAC12HCN
Preferred Device

Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
motor controls, heating controls or dimmers; or wherever full–wave, http://onsemi.com
silicon gate–controlled devices are needed.
• Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3 TRIACS
• High Commutating di/dt and High Immunity to dv/dt @ 125°C 12 AMPERES RMS
• Minimizes Snubber Networks for Protection 400 thru 800 VOLTS
• Blocking Voltage to 800 Volts
• On-State Current Rating of 12 Amperes RMS at 80°C
• High Surge Current Capability – 100 Amperes
• Industry Standard TO-220AB Package for Ease of Design MT2 MT1

• Glass Passivated Junctions for Reliability and Uniformity G

• Device Marking: Logo, Device Type, e.g., MAC12HCD, Date Code

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

4
Rating Symbol Value Unit
Peak Repetitive Off-State Voltage(1) VDRM, Volts
(TJ = – 40 to 125°C, Sine Wave, VRRM
50 to 60 Hz, Gate Open)
MAC12HCD 400
MAC12HCM 600 1
MAC12HCN 800 2
3
On-State RMS Current IT(RMS) 12 A
(All Conduction Angles; TC = 80°C) TO–220AB
CASE 221A
Peak Non-Repetitive Surge Current ITSM 100 A STYLE 4
(One Full Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing Consideration I2t 41 A2sec PIN ASSIGNMENT
(t = 8.33 ms) 1 Main Terminal 1
Peak Gate Power PGM 16 Watts 2 Main Terminal 2
(Pulse Width ≤ 1.0 µs, TC = 80°C)
3 Gate
Average Gate Power PG(AV) 0.35 Watts
4 Main Terminal 2
(t = 8.3 ms, TC = 80°C)
Operating Junction Temperature Range TJ – 40 to °C
+125 ORDERING INFORMATION
Storage Temperature Range Tstg – 40 to °C Device Package Shipping
+150
MAC12HCD TO220AB 50 Units/Rail
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the MAC12HCM TO220AB 50 Units/Rail
voltage ratings of the devices are exceeded.
MAC12HCN TO220AB 50 Units/Rail

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 1999 379 Publication Order Number:

September, 1999 – Rev. 1 MAC12HC/D
 MAC12HCD, MAC12HCM, MAC12HCN

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance °C/W
— Junction to Case RθJC 2.2
— Junction to Ambient RθJA 62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM, mA
(VD = Rated VDRM, VRRM, Gate Open) TJ = 25°C IRRM — — 0.01
TJ = 125°C — — 2.0

ON CHARACTERISTICS
Peak On-State Voltage(1) VTM V
(ITM = ± 17 A) — — 1.85
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) IGT mA
MT2(+), G(+) 10 — 50
MT2(+), G(–) 10 — 50
MT2(–), G(–) 10 — 50
Holding Current IH mA
(VD = 12 V, Gate Open, Initiating Current = ±150 mA) — — 60
Latch Current (VD = 12 V, IG = 10 mA) IL mA
MT2(+), G(+) — — 60
MT2(+), G(–) — — 80
MT2(–), G(–) — — 60
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) VGT V
MT2(+), G(+) 0.5 — 1.5
MT2(+), G(–) 0.5 — 1.5
MT2(–), G(–) 0.5 — 1.5
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current (di/dt)c 15 — — A/ms
(VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/µs, Gate Open, TJ
= 125°C, f = 250 Hz, CL = 10 µF, LL = 40 mH, with Snubber)
Critical Rate of Rise of Off-State Voltage dv/dt 600 — — V/µs
(VD = Rated VDRM, Exponential Waveform,
Gate Open, TJ = 125°C)
Repetitive Critical Rate of Rise of On-State Current di/dt — — 10 A/µs
IPK = 50 A; PW = 40 µsec; diG/dt = 200 mA/µsec; f = 60 Hz
(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

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380
 MAC12HCD, MAC12HCM, MAC12HCN

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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 MAC12HCD, MAC12HCM, MAC12HCN

100 1.20

VGT, GATE TRIGGER VOLTAGE (VOLT)

IGT, GATE TRIGGER CURRENT (mA)
Q3 1.10
Q3
Q2 1.00

0.90 Q1
Q1
10 0.80 Q2

0.70

0.60

0.50

1 0.40
– 40 – 25 – 10 5 20 35 50 65 80 95 110 125 – 40 – 25 – 10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 1. Typical Gate Trigger Current Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature versus Junction Temperature

100 100
MT2 NEGATIVE Q2
Q3
HOLDING CURRENT (mA)

LATCHING CURRENT (mA)

Q1
MT2 POSITIVE
10 10

1 1
– 40 – 25 – 10 5 20 35 50 65 80 95 110 125 – 40 – 25 – 10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical Holding Current Figure 4. Typical Latching Current

versus Junction Temperature versus Junction Temperature
P(AV), AVERAGE POWER DISSIPATION (WATTS)

125 20
DC
18
180°
120°, 90°, 60°, 30°
TC, CASE TEMPERATURE (°C)

16
110 120°
14
12
95 10
8 90°
180°
6 60°
80 30°
4
DC
2
65 0
0 2 4 6 8 10 12 0 2 4 6 8 10 12
IT(RMS), RMS ON-STATE CURRENT (AMP) IT(AV), AVERAGE ON-STATE CURRENT (AMP)

Figure 5. Typical RMS Current Derating Figure 6. On-State Power Dissipation

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 MAC12HCD, MAC12HCM, MAC12HCN

100 1

r(t), TRANSIENT THERMAL RESISTANCE

I T, INSTANTANEOUS ON-STATE CURRENT (AMP)
TYPICAL @
TJ = 25°C
MAXIMUM @ TJ = 125°C

(NORMALIZED)
10
0.1

MAXIMUM @ TJ = 25°C
1
0.01
0.1 1 10 100 1000 10000
t, TIME (ms)

Figure 8. Typical Thermal Response

0.1
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

Figure 7. Typical On-State Characteristics

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383
MAC12SM, MAC12SN
Preferred Device

Sensitive Gate Triacs

Silicon Bidirectional Thyristors
Designed for industrial and consumer applications for full wave
control of ac loads such as appliance controls, heater controls, motor
controls, and other power switching applications.
http://onsemi.com
• Sensitive Gate Allows Triggering by Microcontrollers and other
Logic Circuits
TRIACS
• Blocking Voltage to 800 Volts
• On-State Current Rating of 12 Amperes RMS at 70°C 12 AMPERES RMS
• High Surge Current Capability — 90 Amperes 600 thru 800 VOLTS
• Rugged, Economical TO220AB Package
• Glass Passivated Junctions for Reliability and Uniformity
• Minimum and Maximum Values of IGT, VGT and IH Specified for MT2 MT1
Ease of Design G
• High Commutating di/dt — 8.0 A/ms Minimum at 110°C
• Immunity to dV/dt — 15 V/µsec Minimum at 110°C
• Operational in Three Quadrants: Q1, Q2, and Q3
• Device Marking: Logo, Device Type, e.g., MAC12SM, Date Code
4

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to 110°C, Sine Wave, VRRM 1
50 to 60 Hz, Gate Open) 2
3
MAC12SM 600
MAC12SN 800 TO–220AB
CASE 221A
On-State RMS Current IT(RMS) 12 Amps
STYLE 4
(All Conduction Angles; TC = 70°C)
Peak Non-Repetitive Surge Current ITSM 90 Amps PIN ASSIGNMENT
(One Full Cycle Sine Wave, 60 Hz,
TJ = 110°C) 1 Main Terminal 1
2 Main Terminal 2
Circuit Fusing Consideration I2t 33 A2sec
(t = 8.33 ms) 3 Gate

Peak Gate Power PGM 16 Watts 4 Main Terminal 2

(Pulse Width = 1.0 µsec, TC = 70°C)
Average Gate Power PG(AV) 0.35 Watt ORDERING INFORMATION
(t = 8.3 msec, TC = 70°C)
Device Package Shipping
Operating Junction Temperature Range TJ – 40 to 110 °C
Storage Temperature Range Tstg – 40 to 150 °C MAC12SM TO220AB 50 Units/Rail
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking MAC12SN TO220AB 50 Units/Rail
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred devices are recommended choices for future use
and best overall value.

 Semiconductor Components Industries, LLC, 1999 384 Publication Order Number:

November, 1999 – Rev. 0 MAC12SM/D
 MAC12SM, MAC12SN

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance — Junction to Case RθJC 2.2 °C/W
— Junction to Ambient RθJA 62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM, mA
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C IRRM — — 0.01
TJ = 110°C — — 2.0

ON CHARACTERISTICS
Peak On-State Voltage(1) VTM — — 1.85 V
(ITM = ± 17 A)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) IGT mA
MT2(+), G(+) 0.8 1.5 5.0
MT2(+), G(–) 0.8 2.5 5.0
MT2(–), G(–) 0.8 2.7 5.0
Holding Current IH 1.0 2.5 10 mA
(VD = 12 V, Gate Open, Initiating Current = ±200 mA)
Latching Current (VD = 12 V, IG = 5 mA) IL mA
MT2(+), G(+) 2.0 3.0 15
MT2(+), G(–) 2.0 5.0 20
MT2(–), G(–) 2.0 3.0 15
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) VGT V
MT2(+), G(+) 0.45 0.68 1.5
MT2(+), G(–) 0.45 0.62 1.5
MT2(–), G(–) 0.45 0.67 1.5
DYNAMIC CHARACTERISTICS
Critical Rate of Change of Commutating Current (di/dt)c 8.0 10 — A/ms
(VD = 400 V, ITM = 3.5 A, Commutating dV/dt = 10 V/µs, Gate Open,
TJ = 110°C, f = 500 Hz, Snubber: Cs = 0.01 µf, Rs = 15 Ω)
Critical Rate of Rise of Off-State Voltage dV/dt 15 40 — V/µs
(VD = 67% VDRM, Exponential Waveform, RGK = 1 KΩ,
TJ = 110°C)
Repetitive Critical Rate of Rise of On-State Current di/dt — — 10 A/µs
IPK = 50 A; PW = 40 µsec; diG/dt = 1 A/µsec; Igt = 100 mA;
f = 60 Hz
(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

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385
 MAC12SM, MAC12SN

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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 MAC12SM, MAC12SN

100 0.90
IGT, GATE TRIGGER CURRENT (mA) Q1

VGT, GATE TRIGGER VOLTAGE (VOLTS)

0.85
0.80 Q3

10 Q2 0.75
Q2
Q3 0.70
0.65
Q1 0.60
1
0.55
0.50
0.45
0.1 0.40
– 40 – 25 – 10 5 20 35 50 65 80 95 110 – 40 – 25 – 10 5 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 1. Typical Gate Trigger Current Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature versus Junction Temperature

100 100

IH, HOLDING CURRENT (mA)

IL , LATCHING CURRENT (mA)

Q1
10 10
Q2

Q3
MT2 Positive
1 1
MT2 Negative

0.1 0.1
– 40 – 25 – 10 5 20 35 50 65 80 95 110 – 40 – 25 – 10 5 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical Latching Current Figure 4. Typical Holding Current

versus Junction Temperature versus Junction Temperature
P(AV), AVERAGE POWER DISSIPATION (WATTS)

110 25
TC , CASE TEMPERATURE (°C)

DC
100 20
30°, 60° 180°
120°
90 15 90°
60°
90°
80 10 30°
180°

70 5

DC
60 0
0 2 4 6 8 10 12 0 2 4 6 8 10 12
IT(RMS), RMS ON-STATE CURRENT (AMPS) IT(AV), AVERAGE ON-STATE CURRENT (AMPS)

Figure 5. Typical RMS Current Derating Figure 6. On-State Power Dissipation

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387
 MAC12SM, MAC12SN

100 1

r(t), TRANSIENT THERMAL RESISTANCE

IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) Typical @ TJ = 25°C

Maximum @ TJ = 110°C

Maximum @ TJ = 25°C

(NORMALIZED)
10
0.1

1
0.01
0.1 1 10 100 1000 10000
t, TIME (ms)

Figure 8. Typical Thermal Response

0.1
0.5 1.5 2.5 3.5 4.5
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

Figure 7. Typical On-State Characteristics

http://onsemi.com
388
MAC15 Series
Preferred Device

Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
solid–state relays, motor controls, heating controls and power
supplies; or wherever full–wave silicon gate controlled solid–state
devices are needed. Triac type thyristors switch from a blocking to a http://onsemi.com
conducting state for either polarity of applied main terminal voltage
with positive or negative gate triggering. TRIACS
• Blocking Voltage to 800 Volts 15 AMPERES RMS
• All Diffused and Glass Passivated Junctions for Greater Parameter 400 thru 800 VOLTS
Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability MT2 MT1
• Gate Triggering Guaranteed in Three Modes (MAC15 Series) or G
Four Modes (MAC15A Series)
• Device Marking: Logo, Device Type, e.g., MAC15A6, Date Code
4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to +125°C, Sine Wave 50 to VRRM
60 Hz, Gate Open) 400
MAC15A6 600 1
2
MAC15–8, MAC15A8 800 3
MAC15–10, MAC15A10
TO–220AB
Peak Gate Voltage VGM 10 Volts
(Pulse Width v
1.0 µsec; TC = 90°C)
CASE 221A
STYLE 4
On–State Current RMS IT(RMS) 15 A
Full Cycle Sine Wave 50 to 60 Hz PIN ASSIGNMENT
(TC = +90°C)
1 Main Terminal 1
Circuit Fusing Consideration (t = 8.3 ms) I2t 93 A2s
2 Main Terminal 2
Peak Non–repetitive Surge Current ITSM 150 A 3 Gate
(One Full Cycle Sine Wave,
60 Hz, TC = +80°C) 4 Main Terminal 2
Preceded and followed by rated current
Peak Gate Power (TC = +80°C, PGM 20 Watts
ORDERING INFORMATION
Pulse Width = 1.0 µs)
Average Gate Power PG(AV) 0.5 Watts Device Package Shipping
(TC = +80°C, t = 8.3 ms)
MAC15–8 TO220AB 500/Box
Peak Gate Current IGM 2.0 A
(Pulse Width v
1.0 µsec; TC = 90°C)
MAC15–10 TO220AB 500/Box

Operating Junction Temperature Range TJ – 40 to °C MAC15A6 TO220AB 500/Box

+125
MAC15A8 TO220AB 500/Box
Storage Temperature Range Tstg – 40 to °C
+150 MAC15A10 TO220AB 500/Box
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the Preferred devices are recommended choices for future use
voltage ratings of the devices are exceeded. and best overall value.

 Semiconductor Components Industries, LLC, 1999 389 Publication Order Number:

February, 2000 – Rev. 1 MAC15A4/D
 MAC15 Series

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance — Junction to Case RθJC 2.0 °C/W
Thermal Resistance — Junction to Ambient RθJA 62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Blocking Current TJ = 25°C IDRM, — — 10 µA
(VD = Rated VDRM, VRRM; Gate Open) TJ = 125°C IRRM — — 2.0 mA
ON CHARACTERISTICS
Peak On–State Voltage(1) (ITM = "21 A Peak) VTM — 1.3 1.6 Volts
Gate Trigger Current (Continuous dc) IGT mA
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) — — 50
MT2(+), G(–) — — 50
MT2(–), G(–) — — 50
MT2(–), G(+) “A’’ SUFFIX ONLY — — 75
Gate Trigger Voltage (Continuous dc) VGT Volts
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) — 0.9 2
MT2(+), G(–) — 0.9 2
MT2(–), G(–) — 1.1 2
MT2(–), G(+) “A’’ SUFFIX ONLY — 1.4 2.5
Gate Non–Trigger Voltage VGD Volts
(VD = 12 V, RL = 100 Ohms, TJ = 110°C)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) 0.2 — —
MT2(–), G(+) “A’’ SUFFIX ONLY 0.2 — —
Holding Current IH mA
(VD = 12 Vdc, Gate Open, Initiating Current = "200 mA) — 6.0 40
Turn-On Time tgt — 1.5 — µs
(VD = Rated VDRM, ITM = 17 A)
(IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage dv/dt(c) — 5.0 — V/µs
(VD = Rated VDRM, ITM = 21 A, Commutating di/dt = 7.6 A/ms,
Gate Unenergized, TC = 80°C)
(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

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390
 MAC15 Series

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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391
 MAC15 Series

130 20
α = 180°

PAV, AVERAGE POWER (WATTS)

α = 30° 120°
TJ ≈ 125°
TC, CASE TEMPERATURE (°C)

120 16
α = 60° dc
90°
α = 90° α 60°
110 12
α
30°
α = 180°
100 8 α = CONDUCTION ANGLE
dc
α
90 α 4
TJ ≈ 125°
α = CONDUCTION ANGLE
80 0
0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16
IT(RMS), RMS ON–STATE CURRENT (AMP) IT(RMS), ON–STATE CURRENT (AMP)

Figure 1. RMS Current Derating Figure 2. On–State Power Dissipation

1.8 50
OFF–STATE VOLTAGE = 12 V OFF–STATE VOLTAGE = 12 V
VGT, GATE TRIGGER VOLTAGE (VOLTS)

IGT, GATE TRIGGER CURRENT (mA)

1.6
30
1.4
QUADRANT 4 20
1.2

1.0

10 1
0.8 1
2
QUADRANTS 2 QUADRANT 3
0.6 3 7.0
4
0.4 5.0
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical Gate Trigger Voltage Figure 4. Typical Gate Trigger Current

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392
 MAC15 Series

100 20
GATE OPEN
70 MAIN TERMINAL #1
POSITIVE

I H, HOLDING CURRENT (mA)

50 TJ = 25°C 10
125°C
30 7.0

20 5.0

MAIN TERMINAL #2
POSITIVE
i TM, INSTANTANEOUS FORWARD CURRENT (AMP)

3.0
10

7 2.0
–60 –40 –20 0 20 40 60 80 100 120 140
5 TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Typical Holding Current

3

300

1 TSM, PEAK SURGE CURRENT (AMP)

200
0.7

0.5

100
0.3
70
0.2
TC = 80°C
50
T f = 60 Hz
Surge is preceded and followed by rated current
0.1 30
0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 4.4 1 2 3 5 7 10
vTM, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) NUMBER OF CYCLES

Figure 5. On–State Characteristics Figure 7. Maximum Non–Repetitive

Surge Current

1
r(t) TRANSIENT THERMAL RESISTANCE

0.5

0.2 ZθJC(t) = r(t) • RθJC

(NORMALIZED)

0.1

0.05

0.02

0.01
0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1k 2k 5k 10 k
t, TIME (ms)

Figure 8. Thermal Response

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393
MAC15A6FP, MAC15A8FP,
MAC15A10FP
Preferred Device

Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
solid-state relays, motor controls, heating controls and power supplies;
or wherever full-wave silicon gate controlled solid-state devices are http://onsemi.com
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied main terminal voltage with positive
or negative gate triggering. ISOLATED TRIAC ( )
• Blocking Voltage to 800 Volts 15 AMPERES RMS
• All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability 400 thru 800 VOLTS
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Gate Triggering Guaranteed in Four Modes
• Indicates UL Registered — File #E69369
MT2 MT1

• Device Marking: Logo, Device Type, e.g., MAC15A6FP, Date Code G

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to +125°C, Sine Wave 50 to VRRM
60 Hz, Gate Open) MAC15A6FP 400
MAC15A8FP 600
MAC15A10FP 800
On-State RMS Current (TC = +80°C)(2) IT(RMS) 15 Amps
Full Cycle Sine Wave 50 to 60 Hz
(TC = +95°C) 12 1
2
Peak Nonrepetitive Surge Current ITSM 150 Amps 3
(One Full Cycle Sine Wave,
60 Hz, TC = +80°C) ISOLATED TO–220 Full Pack
Preceded and followed by rated current CASE 221C
STYLE 3
Circuit Fusing (t = 8.3 ms) I2t 93 A2s
Peak Gate Power PGM 20 Watts PIN ASSIGNMENT
(TC = +80°C, Pulse Width = 2.0 µs)
1 Main Terminal 1
Average Gate Power PG(AV) 0.5 Watt
2 Main Terminal 2
(TC = +80°C, t = 8.3 ms)
3 Gate
Peak Gate Current IGM 2.0 Amps
(Pulse Width v
1.0 µsec; TC = 80°C)
Peak Gate Voltage VGM 10 Volts ORDERING INFORMATION
(Pulse Width v
1.0 µsec; TC = 80°C)
Device Package Shipping
RMS Isolation Voltage (TA = 25°C, V(ISO) 1500 Volts
Relative Humidity p
20%) ( ) MAC15A6FP ISOLATED TO220FP 500/Box

Operating Junction Temperature TJ –40 to °C MAC15A8FP ISOLATED TO220FP 500/Box

+125
MAC15A10FP ISOLATED TO220FP 500/Box
Storage Temperature Range Tstg –40 to °C
+150
Preferred devices are recommended choices for future use
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking and best overall value.
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) The case temperature reference point for all TC measurements is a point on
the center lead of the package as close as possible to the plastic body.

 Semiconductor Components Industries, LLC, 1999 394 Publication Order Number:

February, 2000 – Rev. 1 MAC15A6FP/D
 MAC15A6FP, MAC15A8FP, MAC15A10FP

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 2.0 °C/W
Thermal Resistance, Case to Sink RθCS 2.2 (typ) °C/W
Thermal Resistance, Junction to Ambient RθJA 60 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current TJ = 25°C IDRM, — — 10 µA
(VD = Rated VDRM, VRRM; Gate Open) TJ = 125°C IRRM — — 2.0 mA
ON CHARACTERISTICS
Peak On-State Voltage(1) VTM — 1.3 1.6 Volts
"
(ITM = 21 A Peak
Gate Trigger Current (Continuous dc) IGT mA
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) — — 50
MT2(+), G(–) — — 50
MT2(–), G(–) — — 50
MT2(–), G(+) — — 75
Gate Trigger Voltage (Continuous dc) VGT Volts
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) — 0.9 2.0
MT2(+), G(–) — 0.9 2.0
MT2(–), G(–) — 1.1 2.0
MT2(–), G(+) — 1.4 2.5
Gate Non–Trigger Voltage VGD Volts
(Main Terminal Voltage = Rated VDRM, RL = 100 Ω, TJ = +110°C)
All 4 Quadrants 0.2 — —
Holding Current IH — 6.0 40 mA
(Main Terminal Voltage = 12 Vdc, Gate Open,
"
Initiating Current = 200 mA)
Turn-On Time t gt — 1.5 — µs
(VD = Rated VDRM, ITM = 17 A, IGT = 120 mA,
Rise Time = 0.1 µs, Pulse Width = 2 µs)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage dv/dt(c) — 5.0 — V/µs
(VD = Rated VDRM, VRRM, ITM = 21 A, Commutating di/dt = 7.6 A/ms,
Gate Unenergized, TC = 80°C)
(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

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395
 MAC15A6FP, MAC15A8FP, MAC15A10FP

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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396
 MAC15A6FP, MAC15A8FP, MAC15A10FP

TYPICAL CHARACTERISTICS

IGTM , GATE TRIGGER CURRENT (NORMALIZED)

130 3
OFF–STATE VOLTAGE = 12 Vdc
30° 2 ALL MODES
TC, CASE TEMPERATURE (°C)

120
60°
90°
110
125°C 1
150° to 180°
100 0.7
dc
α
0.5
90 α

α = CONDUCTION ANGLE
80 0.3
0 2 4 6 8 10 12 14 16 –60 –40 –20 0 20 40 60 80 100 120 140
IT(RMS), RMS ON–STATE CURRENT (AMP) TJ, JUNCTION TEMPERATURE (°C)

Figure 1. RMS Current Derating Figure 4. Typical Gate Trigger Current

PD(AV), AVERAGE POWER DISSIPATION (WATTS)

20 100
TJ = 125°C α = 180° 70
16 120°
dc 50 TJ = 25°C
90°
α 60° 125°C
12
30
α 30°
8 α = CONDUCTION ANGLE 20

4
i F, INSTANTANEOUS FORWARD CURRENT (AMP)

10
0 7
0 2 4 6 8 10 12 14 16
IT(RMS), RMS ON–STATE CURRENT (AMP) 5

Figure 2. On–State Power Dissipation

3

2
VGTM , GATE TRIGGER VOLTAGE (NORMALIZED)

3
OFF–STATE VOLTAGE = 12 Vdc
1
2 ALL MODES
0.7

0.5
1
0.3
0.7

0.2
0.5

0.3 0.1
–60 –40 –20 0 20 40 60 80 100 120 140 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 4.4
TJ, JUNCTION TEMPERATURE (°C) vT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)

Figure 3. Typical Gate Trigger Voltage Figure 5. Maximum On–State Characteristics

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397
 MAC15A6FP, MAC15A8FP, MAC15A10FP

3 300
GATE OPEN
I H, HOLDING CURRENT (NORMALIZED)

I TSM, PEAK SURGE CURRENT (AMP)

2 APPLIES TO EITHER DIRECTION
200

1
100

0.7 70

0.5
50 TC = 80°C
f = 60 Hz
SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT
0.3 30
–60 –40 –20 0 20 40 60 80 100 120 140 1 2 3 5 7 10
TJ, JUNCTION TEMPERATURE (°C) NUMBER OF CYCLES

Figure 6. Typical Holding Current Figure 7. Maximum Nonrepetitive Surge Current

r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED)

0.5

0.2 ZθJC(t) = r(t) • RθJC

0.1

0.05

0.02

0.01
0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1k 2k 5k 10 k
t, TIME (ms)

Figure 8. Thermal Response

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398
MAC15M, MAC15N
Preferred Device

Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
• Blocking Voltage to 800 Volts http://onsemi.com
• On-State Current Rating of 15 Amperes RMS at 80°C
• Uniform Gate Trigger Currents in Three Modes TRIACS
• High Immunity to dv/dt — 250 V/µs minimum at 125°C 15 AMPERES RMS
• Minimizes Snubber Networks for Protection
600 thru 800 VOLTS
• Industry Standard TO-220AB Package
• High Commutating di/dt — 9.0 A/ms minimum at 125°C
• Operational in Three Quadrants, Q1, Q2, and Q3 MT2 MT1
• Device Marking: Logo, Device Type, e.g., MAC15M, Date Code G

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit
4
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(– 40 to 125°C, Sine Wave, VRRM
50 to 60 Hz, Gate Open)
MAC15M 600
MAC15N 800
On–State RMS Current IT(RMS) 15 A 1
(Full Cycle Sine Wave, 60 Hz, 2
3
TC = 80°C)
Peak Non-repetitive Surge Current ITSM 150 A TO–220AB
(One Full Cycle Sine Wave, 60 Hz, CASE 221A
TJ = 125°C) STYLE 4

Circuit Fusing Consideration (t = 8.3 ms) I2t 93 A2s

PIN ASSIGNMENT
Peak Gate Power PGM 20 Watts 1 Main Terminal 1
(Pulse Width ≤ 1.0 µs, TC = 80°C)
2 Main Terminal 2
Average Gate Power PG(AV) 0.5 Watts
3 Gate
(t = 8.3 ms, TC = 80°C)
4 Main Terminal 2
Operating Junction Temperature Range TJ – 40 to °C
+125
Storage Temperature Range Tstg – 40 to °C ORDERING INFORMATION
+150
Device Package Shipping
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the MAC15M TO220AB 50 Units/Rail
voltage ratings of the devices are exceeded.
MAC15N TO220AB 50 Units/Rail

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 1999 399 Publication Order Number:

February, 2000 – Rev. 1 MAC15M/D
 MAC15M, MAC15N

THERMAL CHARACTERISTICS
Symbol Characteristic Value Unit
RθJC Thermal Resistance — Junction to Case 2.0 °C/W
RθJA Thermal Resistance — Junction to Ambient 62.5
TL Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds 260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Symbol Characteristic Min Typ Max Unit
OFF CHARACTERISTICS
IDRM, Peak Repetitive Blocking Current mA
IRRM (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C — — 0.01
TJ = 125°C — — 2.0

ON CHARACTERISTICS
VTM Peak On-State Voltage(1) Volts
(ITM = ± 21 A Peak) — 1.2 1.6
IGT Gate Trigger Current (Continuous DC) (VD = 12 V, RL = 100 Ω) mA
MT2(+), G(+) 5.0 13 35
MT2(+), G(–) 5.0 16 35
MT2(–), G(–) 5.0 18 35
IH Hold Current mA
(VD = 12 Vdc, Gate Open, Initiating Current = ±150 mA) — 20 40
IL Latching Current (VD = 24 V, IG = 35 mA) mA
MT2(+), G(+) — 33 50
MT2(+), G(–) — 36 80
MT2(–), G(–) — 33 50
VGT Gate Trigger Voltage (VD = 12 V, RL = 100 Ω) Volts
MT2(+), G(+) 0.5 0.75 1.5
MT2(+), G(–) 0.5 0.72 1.5
MT2(–), G(–) 0.5 0.82 1.5
DYNAMIC CHARACTERISTICS
(di/dt)c Rate of Change of Commutating Current; See Figure 10. 9.0 — — A/ms
(VD = 400 V, ITM = 6.0 A, Commutating dv/dt = 24 V/µs, CL = 10 µF
Gate Open, TJ = 125°C, f = 250 Hz, No Snubber) LL = 40 mH
dv/dt Critical Rate of Rise of Off-State Voltage 250 — — V/µs
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

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400
 MAC15M, MAC15N

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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401
 MAC15M, MAC15N

125 20 DC
180°
120 18

PAV, AVERAGE POWER (WATTS)

120°
TC, CASE TEMPERATURE (°C)

115 16
α = 30 and 60° 14
90°
110 60°
α = 90° 12
105
α = 180° α = 120° 10
100 α = 30°
8
95
DC 6
90 4
85 2
80 0
0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16
IT(RMS), RMS ON-STATE CURRENT (AMP) IT(RMS), ON-STATE CURRENT (AMP)

Figure 1. RMS Current Derating Figure 2. On–State Power Dissipation

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

100 1

TYPICAL AT MAXIMUM @ TJ = 125°C

TJ = 25°C

0.1
I T, INSTANTANEOUS ON-STATE CURRENT (AMP)

10
0.01
0.1 1 10 100 1000 1 · 104
t, TIME (ms)

Figure 4. Transient Thermal Response

MAXIMUM @ TJ = 25°C 40
1
I H, HOLD CURRENT (mA)

MT2 POSITIVE

MT2 NEGATIVE

0.1 5
0 0.5 1 1.5 2 2.5 3 3.5 4 – 40 – 10 20 50 80 110 125
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. On–State Characteristics Figure 5. Hold Current Variation

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402
 MAC15M, MAC15N

100 1
OFF-STATE VOLTAGE = 12 V

VGT, GATE TRIGGER VOLTAGE (VOLT)

IGT, GATE TRIGGER CURRENT (mA)
RL = 140 Ω
Q2
Q3

Q1 Q1
Q3

Q2

OFF-STATE VOLTAGE = 12 V
RL = 140 Ω

1 0.5
– 40 – 10 20 50 80 110 125 – 40 – 10 +20 50 80 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Typical Holding Current versus Junction Figure 7. Gate Trigger Voltage versus Junction
Temperature Temperature

(dv/dt) c , CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/µ s)

dv/dt , CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE (V/µ s)

5000 100
VD = 800 Vpk
TJ = 125°C
4K

3K TJ = 125°C 100°C 75°C

10
2K
ITM
1
f=
tw 2 tw
1K
6f I
(di/dt)c = TM
VDRM 1000

0 1
10 100 1000 10000 10 20 30 40 50 60 70 80 90 100
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS) (di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

Figure 8. Critical Rate of Rise of Off–State Voltage Figure 9. Critical Rate of Rise of
(Exponential) Commutating Voltage

LL 1N4007
200 VRMS
ADJUST FOR MEASURE
ITM, 60 Hz VAC I
TRIGGER CONTROL

CHARGE
TRIGGER CONTROL –
CHARGE 200 V
+
MT2
1N914 51 W
NON-POLAR MT1
CL G

Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.

Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c

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403
MAC15SD, MAC15SM,
MAC15SN
Preferred Device

Sensitive Gate Triacs

Silicon Bidirectional Thyristors
Designed for industrial and consumer applications for full wave
control of ac loads such as appliance controls, heater controls, motor http://onsemi.com
controls, and other power switching applications.
• Sensitive Gate allows Triggering by Microcontrollers and other TRIACS
Logic Circuits 15 AMPERES RMS
• High Immunity to dv/dt — 25 V/ms minimum at 110_C 400 thru 800 VOLTS
• High Commutating di/dt — 8.0 A/ms minimum at 110_C
• Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design MT2 MT1
• On-State Current Rating of 15 Amperes RMS at 70_C G
• High Surge Current Capability — 120 Amperes
• Blocking Voltage to 800 Volts
• Rugged, Economical TO220AB Package
4
• Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3
• Device Marking: Logo, Device Type, e.g., MAC15SD, Date Code

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit 1
2
Peak Repetitive Off–State Voltage(1) VDRM, Volts 3
(TJ = –40 to 110°C, Sine Wave, 50 to VRRM
60Hz, Gate Open) TO–220AB
MAC15SD 400 CASE 221A
MAC15SM 600 STYLE 4
MAC15SN 800
PIN ASSIGNMENT
On–State RMS Current IT(RMS) 15 A
(Full Cycle Sine Wave, 60Hz, 1 Main Terminal 1
TJ = 70°C) 2 Main Terminal 2
Peak Non-repetitive Surge Current ITSM 120 A 3 Gate
(One Full Cycle Sine Wave,
60 Hz, TJ = 110°C) 4 Main Terminal 2

Circuit Fusing Consideration (t = 8.3 ms) I2t 60 A2s

Peak Gate Power PGM 20 Watts ORDERING INFORMATION
(Pulse Width ≤ 1.0 µs, TC = 70°C)
Device Package Shipping
Average Gate Power PG(AV) 0.5 Watts
(t = 8.3 ms, TC = 70°C) MAC15SD TO220AB 50 Units/Rail

Operating Junction Temperature Range TJ – 40 to °C MAC15SM TO220AB 50 Units/Rail

+110
MAC15SN TO220AB 50 Units/Rail
Storage Temperature Range Tstg – 40 to °C
+150
Preferred devices are recommended choices for future use
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking and best overall value.
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.

 Semiconductor Components Industries, LLC, 1999 404 Publication Order Number:

January, 2000 – Rev. 2 MAC15S/D
 MAC15SD, MAC15SM, MAC15SN

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance °C/W
— Junction to Case RθJC 2.0
— Junction to Ambient RθJA 62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM, mA
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C IRRM — — 0.01
TJ = 110°C — — 2.0

ON CHARACTERISTICS
Peak On-State Voltage(1) (ITM = "21A) VTM — — 1.8 Volts
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100Ω) IGT mA
MT2(+), G(+) .8 2.0 5.0
MT2(+), G(–) .8 3.0 5.0
MT2(–), G(–) .8 3.0 5.0
Hold Current (VD = 12 V, Gate Open, Initiating Current = "150mA) IH 1.0 3.0 10 mA
Latching Current (VD = 24V, IG = 5mA) IL mA
MT2(+), G(+) 2.0 5.0 15
MT2(+), G(–) 2.0 10 20
MT2(–), G(–) 2.0 5.0 15
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100Ω) VGT Volts
MT2(+), G(+) 0.45 0.62 1.5
MT2(+), G(–) 0.45 0.60 1.5
MT2(–), G(–) 0.45 0.65 1.5
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current (di/dt)c 8.0 10 — A/ms
(VD = 400V, ITM = 3.5A, Commutating dv/dt = 10Vm/sec,
Gate Open, TJ = 110_C, f= 500Hz, Snubber: CS = 0.01 mF, RS =15 , W
see Figure 15.)
Critical Rate of Rise of Off-State Voltage dv/dt 25 75 — m
V/ s
W
(VD = Rate VDRM, Exponential Waveform, RGK = 510 , TJ = 110_C)
(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

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405
 MAC15SD, MAC15SM, MAC15SN

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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 MAC15SD, MAC15SM, MAC15SN

T C , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C)

P(AV), AVERAGE POWER DISSIPATION (WATTS)

110 25
DC
α 180°
100 20 α
120°
a = 30 and 60° 90°
a = CONDUCTION ANGLE
90 15 60°

α
80 α 10
120° a = 30°
a = CONDUCTION ANGLE
70 5
180°

60 DC 0
0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16
IT(RMS), RMS ON–STATE CURRENT (AMPS) IT(RMS), RMS ON–STATE CURRENT (AMPS)
Figure 1. RMS Current Derating Figure 2. Maximum On–State Power Dissipation

R(t) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)

I T, INSTANTANOUS ON-STATE CURRENT (AMPS)

100 1
Typical @ TJ = 25 °C

10 Maximum @ ZqJC(t) = RqJC(t)  r(t)

TJ = 25 °C
0.1

1
Maximum @
TJ = 110°C

0.1 0.01
0.5 1 1.5 2 2.5 3 3.5 4 4.5 0.1 1 10 100 1000 1@10 4
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) t, TIME (ms)
Figure 3. On–State Characteristics Figure 4. Transient Thermal Response

7 9

6 8
I L , LATCHING CURRENT (mA)
I H , HOLDING CURRENT (mA)

7
5
Q1
MT2 NEGATIVE 6
4
5
3 Q3
4
MT2 POSITIVE
2 3

1 2
–40 –25 –10 5 20 35 50 65 80 95 110 –40 –25 –10 5 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Holding Current Versus Figure 6. Typical Latching Current Versus
Junction Temperature Junction Temperature

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 MAC15SD, MAC15SM, MAC15SN

7 0.9

V GT, GATE TRIGGER VOLTAGE (VOLTS)

IGT, GATE TRIGGER CURRENT (mA)
6 0.8

5
0.7
Q3 Q3
4
0.6
Q1
3
Q2 0.5
2 Q2

1 Q1 0.4

0 0.3
–40 –25 –10 5 20 35 50 65 80 95 110 –40 –25 –10 5 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Gate Trigger Current Figure 8. Typical Gate Trigger Voltage
Versus Junction Temperature Versus Junction Temperature

140 110

TJ = 110°C TJ = 100°C
VPK = 400V 100
120 STATIC dv/dt (V/ S)
STATIC dv/dt (V/ mS)

90
m
600V
110°C
100 80
800V
70
80 120°C
60
RG – MT1 = 510 W
60 50
100 200 300 400 500 600 700 800 900 1000 400 450 500 550 600 650 700 750 800
RGK, GATE–MT1 RESISTANCE (OHMS) VPK, Peak Voltage (Volts)

Figure 9. Typical Exponential Static dv/dt Figure 10. Typical Exponential Static dv/dt
Versus Gate–MT1 Resistance, MT2(+) Versus Peak Voltage, MT2(+)

110 180

100 160
TJ = 100°C
VPK = 400V 140
90
STATIC dv/dt (V/ S)
STATIC dv/dt (V/ S)

m
m

120
80 110°C
600V 100
70
80
800V 120°C
60
RG – MT1 = 510 W 60
RG – MT1 = 510 W
50 40

40 20
100 105 110 115 120 125 400 450 500 550 600 650 700 750 800
TJ, Junction Temperature (°C) VPK, Peak Voltage (Volts)
Figure 11. Typical Exponential Static dv/dt Figure 12. Typical Exponential Static dv/dt
Versus Junction Temperature, MT2(+) Versus Peak Voltage, MT2( ) *

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 MAC15SD, MAC15SM, MAC15SN

m (dv/dt)c , CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/ s)

200 100

150
90°C
STATIC dv/dt (V/ S)

VPK = 400V
m

600V
100 10
100°C

800V 1
f=
2 tw
50 tw 110°C
6f ITM

W
(di/dt)c =
1000
RG – MT1 = 510 VDRM

0 1
100 105 110 115 120 125 1 5 10 15 20 25
TJ, Junction Temperature (°C) (di/dt)c, CRITICAL RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

Figure 13. Typical Exponential Static dv/dt Figure 14. Critical Rate of Rise of
Versus Junction Temperature, MT2( ) * Commutating Voltage

LL 1N4007
200 VRMS
ADJUST FOR MEASURE
ITM, 60 Hz VAC RS
I
TRIGGER CONTROL

CHARGE
TRIGGER CONTROL –
CHARGE 200 V
CS ADJUST FOR +
MT2 di/dt(c)
1N914 51 W
NON-POLAR MT1
CL G

Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.

Figure 15. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c

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409
MAC16CD, MAC16CM,
MAC16CN
Preferred Device

Triacs
Silicon Bidirectional Thyristors
Designed primarily for full wave ac control applications, such as
motor controls, heating controls or dimmers; or wherever full–wave, http://onsemi.com
silicon gate–controlled devices are needed.
• High Commutating di/dt and High Immunity to dv/dt @ 125°C TRIACS
• Minimizes Snubber Networks for Protection 16 AMPERES RMS
• Blocking Voltage to 800 Volts 400 thru 800 VOLTS
• On-State Current Rating of 16 Amperes RMS
• High Surge Current Capability — 150 Amperes
• Industry Standard TO-220AB Package for Ease of Design
• Glass Passivated Junctions for Reliability and Uniformity MT2 MT1

• Operational in Three Quadrants, Q1, Q2, and Q3 G

• Device Marking: Logo, Device Type, e.g., MAC16CD, Date Code

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

4
Rating Symbol Value Unit
Peak Repetitive Off-State Voltage(1) VDRM, Volts
VRRM
(TJ = – 40 to 125°C) MAC16CD 400
MAC16CM 600
MAC16CN 800 1
2
On-State RMS Current IT(RMS) 16 A 3
(Full Cycle Sine Wave 50 to 60 Hz;
TC = 80°C) TO–220AB
CASE 221A
Peak Non-Repetitive Surge Current ITSM 150 A STYLE 4
(One Full Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing Consideration I2t 93 A2sec PIN ASSIGNMENT
(t = 8.33 ms) 1 Main Terminal 1
Peak Gate Power PGM 20 Watts 2 Main Terminal 2
(Pulse Width ≤ 1.0 µs, TC = 80°C)
3 Gate
Average Gate Power PG(AV) 0.5 Watts
4 Main Terminal 2
(t = 8.3 ms, TC = 80°C)
Operating Junction Temperature Range TJ – 40 to °C
+125 ORDERING INFORMATION
Storage Temperature Range Tstg – 40 to °C Device Package Shipping
+150
MAC16CD TO220AB 50 Units/Rail
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the MAC16CM TO220AB 50 Units/Rail
voltage ratings of the devices are exceeded.
MAC16CN TO220AB 50 Units/Rail

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 1999 410 Publication Order Number:

February, 2000 – Rev. 1 MAC16C/D
 MAC16CD, MAC16CM, MAC16CN

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance °C/W
— Junction to Case RθJC 2.2
— Junction to Ambient RθJA 62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM, mA
(VD = Rated VDRM, VRRM Gate Open) TJ = 25°C IRRM — — 0.01
TJ = 125°C — — 2.0

ON CHARACTERISTICS
Peak On-State Voltage(1) VTM V
(ITM = ± 21 A Peak) — 1.2 1.6
Gate Trigger Current (Continuous dc) IGT mA
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+) 8.0 12 35
MT2(+), G(–) 8.0 16 35
MT2(–), G(–) 8.0 20 35
Holding Current IH mA
(VD = 12 V, Gate Open, Initiating Current = ±150 mA) — 20 50
Latching Current (VD = 12 V, IG = 35 mA) IL mA
MT2(+), G(+) — 25 50
MT2(+), G(–) — 40 80
MT2(–), G(–) — 24 50
Gate Trigger Voltage (Continuous dc) VGT V
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+) 0.5 .75 1.5
MT2(+), G(–) 0.5 .72 1.5
MT2(–), G(–) 0.5 .82 1.5

DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current (di/dt)c 15 — — A/ms
(VD = 400 V, ITM = 6.0 A, Commutating dv/dt = 24 V/µs, Gate Open,
TJ = 125°C, f = 250 Hz, CL = 10 µF, LL = 40 mH, with Snubber)
Critical Rate of Rise of Off-State Voltage dv/dt 600 — — V/µs
(VD = Rated VDRM, Exponential Waveform,
Gate Open, TJ = 125°C)
Repetitive Critical Rate of Rise of On-State Current di/dt — — 10 A/µs
IPK = 50 A; PW = 40 µsec; diG/dt = 200 mA/µsec; f = 60 Hz
(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

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411
 MAC16CD, MAC16CM, MAC16CN

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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412
 MAC16CD, MAC16CM, MAC16CN

100 1.10

VGT, GATE TRIGGER VOLTAGE (VOLT)

IGT, GATE TRIGGER CURRENT (mA)
1.00 Q3
Q3
Q2
0.90
Q1
Q1 0.80
10
0.70
Q2
0.60

0.50

1 0.40
– 40 – 25 – 10 5 20 35 50 65 80 95 110 125 – 40 – 25 – 10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 1. Typical Gate Trigger Current Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature versus Junction Temperature

100 100

Q2
Q1
HOLDING CURRENT (mA)

LATCHING CURRENT (mA)

MT2 NEGATIVE

10 MT2 POSITIVE 10 Q3

1 1
– 40 – 25 – 10 5 20 35 50 65 80 95 110 125 – 40 – 25 – 10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical Holding Current Figure 4. Typical Latching Current

versus Junction Temperature versus Junction Temperature

125 24
22 DC
120
PAV, AVERAGE POWER (WATTS)

115 30° 20 180°

TC, CASE TEMPERATURE (°C)

60° 18 120°
110
90° 16
105
14
100 120°
12
95 180°
10
90 DC 8
85 90°
6 60°
80 4 30°
75 2
70 0
0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16
IT(RMS), RMS ON-STATE CURRENT (AMP) IT(AV), AVERAGE ON-STATE CURRENT (AMP)

Figure 5. Typical RMS Current Derating Figure 6. On-State Power Dissipation

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413
 MAC16CD, MAC16CM, MAC16CN

100 1.0

r(t), TRANSIENT THERMAL RESISTANCE

I T, INSTANTANEOUS ON-STATE CURRENT (AMP)
TYPICAL AT
TJ = 25°C
MAXIMUM @ TJ = 125°C

(NORMALIZED)
10 0.1

MAXIMUM @ TJ = 25°C
1
0.01
0.1 1 10 100 1000 10000
t, TIME (ms)

Figure 8. Typical Thermal Response

0.1
0 0.5 1 1.5 2 2.5 3 3.5 4
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

Figure 7. On-State Characteristics

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414
MAC16D, MAC16M, MAC16N
Preferred Device

Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
• Blocking Voltage to 800 Volts http://onsemi.com
• On-State Current Rating of 16 Amperes RMS at 80°C
• Uniform Gate Trigger Currents in Three Quadrants TRIACS
• High Immunity to dv/dt — 500 V/µs minimum at 125°C 16 AMPERES RMS
• Minimizes Snubber Networks for Protection
400 thru 800 VOLTS
• Industry Standard TO-220AB Package
• High Commutating di/dt — 9.0 A/ms minimum at 125°C
• Device Marking: Logo, Device Type, e.g., MAC16D, Date Code
MT2 MT1
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to 125°C, Sine Wave, VRRM
50 to 60 Hz, Gate Open) 4
MAC16D 400
MAC16M 600
MAC16N 800
On-State RMS Current IT(RMS) 16 Amps
(Full Cycle Sine Wave, 60 Hz,
TC = 80°C) 1
2
Peak Non-Repetitive Surge Current ITSM 150 Amps 3
(One Full Cycle Sine Wave, 60 Hz,
TJ = 125°C) TO–220AB
CASE 221A
Circuit Fusing Consideration I2t 93 A2sec STYLE 4
(t = 8.3 ms)
Peak Gate Power PGM 20 Watts PIN ASSIGNMENT
(Pulse Width ≤ 1.0 µs, TC = 80°C)
1 Main Terminal 1
Average Gate Power PG(AV) 0.5 Watt 2 Main Terminal 2
(t = 8.3 ms, TC = 80°C)
3 Gate
Operating Junction Temperature Range TJ – 40 to °C
+125 4 Main Terminal 2

Storage Temperature Range Tstg – 40 to °C

+150 ORDERING INFORMATION
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
Device Package Shipping
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded. MAC16D TO220AB 50 Units/Rail

MAC16M TO220AB 50 Units/Rail

MAC16N TO220AB 50 Units/Rail

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 2000 415 Publication Order Number:

May, 2000 – Rev. 2 MAC16D/D
 MAC16D, MAC16M, MAC16N

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance — Junction to Case RθJC 2.0 °C/W
— Junction to Ambient RθJA 62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM, mA
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C IRRM — — 0.01
TJ = 125°C — — 2.0

ON CHARACTERISTICS
Peak On-State Voltage* VTM — 1.2 1.6 Volts
(ITM = ± 21 A Peak)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) IGT mA
MT2(+), G(+) 10 16 50
MT2(+), G(–) 10 18 50
MT2(–), G(–) 10 22 50
Holding Current IH — 20 50 mA
(VD = 12 V, Gate Open, Initiating Current = ±150 mA)
Latching Current (VD = 24 V, IG = 50 mA) IL mA
MT2(+), G(+) — 33 50
MT2(+), G(–) — 36 80
MT2(–), G(–) — 33 50
Gate Trigger Voltage (VD = 12 V, RL = 100 Ω) VGT Volts
MT2(+), G(+) 0.5 0.75 1.5
MT2(+), G(–) 0.5 0.72 1.5
MT2(–), G(–) 0.5 0.82 1.5
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10. (di/dt)c 9.0 — — A/ms
(VD = 400 V, ITM = 6.0 A, Commutating dv/dt = 24 V/µs,
Gate Open, TJ = 125°C, f = 250 Hz, No Snubber)
CL = 10 µF
LL = 40 mH
Critical Rate of Rise of Off-State Voltage dv/dt 500 — — V/µs
(VD = Rated VDRM, Exponential Waveform,
Gate Open, TJ = 125°C)
*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

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416
 MAC16D, MAC16M, MAC16N

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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 MAC16D, MAC16M, MAC16N

125 20 DC
180°
120 18

PAV, AVERAGE POWER (WATTS)

120°
TC, CASE TEMPERATURE (°C)

115 16
α = 30 and 60° 14
90°
110 60°
α = 90° 12
105
α = 180° α = 120° 10
100 α = 30°
8
95
DC 6
90 4
85 2
80 0
0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16
IT(RMS), RMS ON-STATE CURRENT (AMP) IT(RMS), ON-STATE CURRENT (AMP)

Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

100 1

TYPICAL AT MAXIMUM @ TJ = 125°C

TJ = 25°C

0.1
I T, INSTANTANEOUS ON-STATE CURRENT (AMP)

10
0.01
0.1 1 10 100 1000 1 · 104
t, TIME (ms)

Figure 4. Thermal Response

MAXIMUM @ TJ = 25°C 40
1
I H, HOLD CURRENT (mA)

MT2 POSITIVE

MT2 NEGATIVE

0.1 5
0 0.5 1 1.5 2 2.5 3 3.5 4 – 40 – 10 20 50 80 110 125
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. On-State Characteristics Figure 5. Hold Current Variation

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 MAC16D, MAC16M, MAC16N

100 1
VD = 12 V

VGT, GATE TRIGGER VOLTAGE (VOLT)

IGT, GATE TRIGGER CURRENT (mA)

RL = 100 Ω
Q2
Q3

Q1 Q1
Q3

Q2

VD = 12 V
RL = 100 Ω

1 0.5
– 40 – 10 20 50 80 110 125 – 40 – 10 +20 50 80 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Gate Trigger Current Variation Figure 7. Gate Trigger Voltage Variation
dv/dt , CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE (V/µ s)

5000 100
VD = 800 Vpk
4K
TJ = 125°C (dv/dt) c , CRITICAL RATE OF RISE OF
COMMUTATING VOLTAGE (V/µ s)

3K TJ = 125°C 100°C 75°C

10
2K
ITM
1
f=
tw 2 tw
1K
6f I
(di/dt)c = TM
VDRM 1000

0 1
10 100 1000 10000 10 20 30 40 50 60 70 80 90 100
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS) (di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

Figure 8. Critical Rate of Rise of Off-State Voltage Figure 9. Critical Rate of Rise of
(Exponential Waveform) Commutating Voltage

LL 1N4007
200 VRMS
ADJUST FOR MEASURE
ITM, 60 Hz VAC I
TRIGGER CONTROL

CHARGE
TRIGGER CONTROL –
CHARGE 200 V
+
MT2
1N914 51 W
NON-POLAR MT1
CL G

Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.

Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c

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419
MAC16HCD, MAC16HCM,
MAC16HCN
Preferred Device

Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
motor controls, heating controls or dimmers; or wherever full–wave, http://onsemi.com
silicon gate–controlled devices are needed.
• High Commutating di/dt and High Immunity to dv/dt @ 125°C TRIACS
• Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3 16 AMPERES RMS
• Blocking Voltage to 800 Volts 400 thru 800 VOLTS
• On–State Current Rating of 16 Amperes RMS at 80°C
• High Surge Current Capability — 150 Amperes
• Industry Standard TO–220AB Package for Ease of Design
• Glass Passivated Junctions for Reliability and Uniformity MT2 MT1

• Device Marking: Logo, Device Type, e.g., MAC16HCD, Date Code G

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit
4
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to 125°C, Sine Wave, VRRM
50 to 60 Hz, Gate Open)
MAC16HCD 400
MAC16HCM 600
MAC16HCN 800
1
On–State RMS Current IT(RMS) 16 A 2
3
(Full Cycle Sine Wave 50 to 60 Hz;
TC = 80°C) TO–220AB
Peak Non-Repetitive Surge Current ITSM 150 A CASE 221A
(One Full Cycle, 60 Hz, TJ = 125°C) STYLE 4

Circuit Fusing Consideration(2) I2t 93 A2sec

PIN ASSIGNMENT
(t = 8.33 ms)
1 Main Terminal 1
Peak Gate Power PGM 20 Watts
(Pulse Width ≤ 1.0 µs, TC = 80°C) 2 Main Terminal 2
3 Gate
Average Gate Power PG(AV) 0.5 Watts
(t = 8.3 ms, TC = 80°C) 4 Main Terminal 2
Operating Junction Temperature Range TJ – 40 to °C
+125
ORDERING INFORMATION
Storage Temperature Range Tstg – 40 to °C
+150 Device Package Shipping

(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking MAC16HCD TO220AB 50 Units/Rail
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded. MAC16HCM TO220AB 50 Units/Rail

MAC16HCN TO220AB 50 Units/Rail

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 1999 420 Publication Order Number:

February, 2000 – Rev. 0 MAC16HC/D
 MAC16HCD, MAC16HCM, MAC16HCN

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance °C/W
— Junction to Case RθJC 2.2
— Junction to Ambient RθJA 62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current TJ = 25°C IDRM, — — 0.01 mA
(VD = Rated VDRM, VRRM, Gate Open) TJ = 125°C IRRM — — 2.0
ON CHARACTERISTICS
Peak On–State Voltage(1) (ITM = "21 A Peak) VTM — — 1.6 Volts
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) IGT mA
MT2(+), G(+) 10 16 50
MT2(+), G(–) 10 18 50
MT2(–), G(–) 10 22 50
Holding Current (VD = 12 V, Gate Open, Initiating Current = "150 mA) IH — 20 50 mA
Latch Current (VD = 12 V, IG = 50 mA) IL mA
MT2(+), G(+) — 33 60
MT2(+), G(–) — 36 80
MT2(–), G(–) — 33 60
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) VGT Volts
MT2(+), G(+) 0.5 0.80 1.5
MT2(+), G(–) 0.5 0.73 1.5
MT2(–), G(–) 0.5 0.82 1.5
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current (di/dt)c 15 — — A/ms
(VD = 400 V, ITM = 6A, Commutating dv/dt = 20 V/µs, CL = 10 µF
Gate Open, TJ = 125°C, f = 250 Hz, with Snubber) LL = 40 mH
Critical Rate of Rise of Off–State Voltage dv/dt 750 — — V/µs
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
Repetitive Critical Rate of Rise of On-State Current di/dt — — 10 A/µs
IPK = 50 A; PW = 40 µsec; diG/dt = 200 mA/µsec; f = 60 Hz
(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

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421
 MAC16HCD, MAC16HCM, MAC16HCN

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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 MAC16HCD, MAC16HCM, MAC16HCN

100 1.10
Q3

VGT, GATE TRIGGER VOLTAGE (VOLT)

IGT, GATE TRIGGER CURRENT (mA)
1.00
Q3 Q1
Q2 0.90
Q2
Q1 0.80
10
0.70

0.60

0.50

1 0.40
– 40 – 25 – 10 5 20 35 50 65 80 95 110 125 – 40 – 25 – 10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 1. Typical Gate Trigger Current Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature versus Junction Temperature

100 100
HOLDING CURRENT (mA)

LATCHING CURRENT (mA)

Q2
MT2 NEGATIVE
Q1
Q3
10 10
MT2 POSITIVE

1 1
– 40 – 25 – 10 5 20 35 50 65 80 95 110 125 – 40 – 25 – 10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical Holding Current Figure 4. Typical Latching Current

versus Junction Temperature versus Junction Temperature

24
P(AV), AVERAGE POWER DISSIPATION (WATTS)

125
120 22 DC
180°
115 20
TC, CASE TEMPERATURE (°C)

120°
110 60°, 30° 18

105 90° 16
14
100
120° 12
95
10
90 180° 90°
8
85 DC 60°
6
30°
80 4
75 2
70 0
0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16
IT(RMS), RMS ON-STATE CURRENT (AMP) IT(AV), AVERAGE ON-STATE CURRENT (AMP)

Figure 5. Typical RMS Current Derating Figure 6. On-State Power Dissipation

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 MAC16HCD, MAC16HCM, MAC16HCN

100 1

r(t), TRANSIENT THERMAL RESISTANCE

I T, INSTANTANEOUS ON-STATE CURRENT (AMP)
TYPICAL @
TJ = 25°C MAXIMUM @ TJ = 125°C

(NORMALIZED)
10
0.1

MAXIMUM @ TJ = 25°C
1
0.01
0.1 1 10 100 1000 10000
t, TIME (ms)

Figure 8. Typical Thermal Response

0.1
0 0.5 1 1.5 2 2.5 3 3.5
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

Figure 7. Typical On-State Characteristics

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424
MAC97 Series
Preferred Device

Sensitive Gate Triacs

Silicon Bidirectional Thyristors
Designed for use in solid state relays, MPU interface, TTL logic and
any other light industrial or consumer application. Supplied in an
inexpensive TO–92 package which is readily adaptable for use in
automatic insertion equipment. http://onsemi.com
• One–Piece, Injection–Molded Package
• Blocking Voltage to 600 Volts TRIACS
• Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all 0.8 AMPERE RMS
possible Combinations of Trigger Sources, and especially for Circuits 200 thru 600 VOLTS
that Source Gate Drives
• All Diffused and Glassivated Junctions for Maximum Uniformity of
Parameters and Reliability
• Device Marking: Device Type, e.g., MAC97A4, Date Code MT2 MT1
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off-State Voltage VDRM, Volts
(TJ = –40 to +110°C)(1) VRRM
Sine Wave 50 to 60 Hz, Gate Open
MAC97A4 200
MAC97A6 400
MAC97–8, MAC97A8 600 1
2
On-State RMS Current IT(RMS) 0.6 Amp 3
Full Cycle Sine Wave 50 to 60 Hz
(TC = +50°C) TO–92 (TO–226AA)
CASE 029
Peak Non–Repetitive Surge Current ITSM 8.0 Amps
STYLE 12
One Full Cycle, Sine Wave 60 Hz
(TC = 110°C)
Circuit Fusing Considerations (t = 8.3 ms) I2t 0.26 A2s
PIN ASSIGNMENT
1 Main Terminal 1
Peak Gate Voltage VGM 5.0 Volts
(tv 2.0 ms, TC = +80°C) 2 Gate

Peak Gate Power PGM 5.0 Watts 3 Main Terminal 2

(tv 2.0 ms, TC = +80°C)
Average Gate Power PG(AV) 0.1 Watt
(TC = 80°C, t v
8.3 ms) ORDERING INFORMATION
Peak Gate Current IGM 1.0 Amp See detailed ordering and shipping information in the package
(tv 2.0 ms, TC = +80°C)
dimensions section on page 432 of this data sheet.

Operating Junction Temperature Range TJ –40 to °C Preferred devices are recommended choices for future use
+110 and best overall value.

Storage Temperature Range Tstg –40 to °C

+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.

 Semiconductor Components Industries, LLC, 2000 425 Publication Order Number:

May, 2000 – Rev. 7 MAC97/D
 MAC97 Series

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 75 °C/W
Thermal Resistance, Junction to Ambient RθJA 200 °C/W
Maximum Lead Temperature for Soldering Purposes for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM, IRRM
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C — — 10 µA
TJ = +110°C — — 100 µA
ON CHARACTERISTICS
Peak On–State Voltage VTM — — 1.9 Volts
"
(ITM = .85 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%)
Gate Trigger Current (Continuous dc) IGT mA
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) MAC97–8 Device — — 10
MT2(+), G(–) — — 10
MT2(–), G(–) — — 10
MT2(–), G(+) — — 10

MT2(+), G(+) MAC97A4,A6,A8 Devices — — 5.0

MT2(+), G(–) — — 5.0
MT2(–), G(–) — — 5.0
MT2(–), G(+) — — 7.0

Gate Trigger Voltage (Continuous dc) VGT Volts

(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) All Types — .66 2.0
MT2(+), G(–) All Types — .77 2.0
MT2(–), G(–) All Types — .84 2.0
MT2(–), G(+) All Types — .88 2.5
Gate Non–Trigger Voltage VGD 0.1 — — Volts
(VD = 12 V, RL = 100 Ohms, TJ = 110°C)
All Four Quadrants
Holding Current IH — 1.5 10 mA
(VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)
Turn-On Time tgt — 2.0 — µs
(VD = Rated VDRM, ITM = 1.0 A pk, IG = 25 mA)

DYNAMIC CHARACTERISTICS
Critical Rate–of–Rise of Commutation Voltage dv/dt(c) — 5.0 — V/µs
(VD = Rated VDRM, ITM = .84 A,
Commutating di/dt = .3 A/ms, Gate Unenergized, TC = 50°C)
Critical Rate of Rise of Off–State Voltage dv/dt — 25 — V/µs
(VD = Rated VDRM, TC = 110°C, Gate Open, Exponential Waveform

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426
 MAC97 Series

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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427
 MAC97 Series

110 110
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (°C)
100 T = 30° 100 T = 30°

I T(RMS) , MAXIMUM ALLOWABLE

AMBIENT TEMPERATURE (°C)
90 60°
90 60°
DC DC 90°
90° 80
80
180° 70 180°
70 120° 120°
60
60
α 50 α
50
α 40 α
40 30
α = CONDUCTION ANGLE α = CONDUCTION ANGLE
30 20
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4
IT(RMS), RMS ON–STATE CURRENT (AMPS) IT(RMS), RMS ON–STATE CURRENT (AMPS)

Figure 1. RMS Current Derating Figure 2. RMS Current Derating

P(AV), MAXIMUM AVERAGE POWER DISSIPATION (WATTS)

1.2 6.0

α 4.0
1.0
DC
α TJ = 110°C
0.8 180°
2.0
α = CONDUCTION ANGLE 120° 25°C
0.6

1.0
0.4
ITM, INSTANTANEOUS ON-STATE CURRENT (AMP)

90°
60° 0.6
0.2
T = 30° 0.4
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
IT(RMS), RMS ON–STATE CURRENT (AMPS)
0.2
Figure 3. Power Dissipation

0.1

0.06

0.04

0.02

0.01

0.006
0.4 1.2 2.0 2.8 3.6 4.4 5.2 6.0
VTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

Figure 4. On–State Characteristics

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 MAC97 Series

R(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0 10

I TSM , PEAK SURGE CURRENT (AMPS)

5.0
Q Q
Z JC(t) = R JC(t) @ r(t)

0.1 3.0

TJ = 110°C
2.0 f = 60 Hz
CYCLE

Surge is preceded and followed by rated current.

0.01 1.0
0.1 1.0 10 100 1S103 1S104 1.0 2.0 3.0 5.0 10 30 50 100
t, TIME (ms) NUMBER OF CYCLES

Figure 5. Transient Thermal Response Figure 6. Maximum Allowable Surge Current

100 1.2
I GT , GATE TRIGGER CURRENT (mA)

1.1 Q4

VGT, GATE TRIGGER VOLTAGE (V)

1.0 Q3
Q4 Q2
10 0.9
Q3
0.8 Q1
Q2
0.7
Q1
1 0.6

0.5
0.4
0 0.3
–40 –25 –10 5 20 35 50 65 80 95 110 –40 –25 –10 5 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Typical Gate Trigger Current versus Figure 8. Typical Gate Trigger Voltage versus
Junction Temperature Junction Temperature

100 10
IL , LATCHING CURRENT (mA)

IH , HOLDING CURRENT (mA)

10 Q2
MT2 Negative
1
Q4 Q3 MT2 Positive
1
Q1

0 0.1
–40 –25 –10 5 20 35 50 65 80 95 110 –40 –25 –10 5 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 9. Typical Latching Current versus Figure 10. Typical Holding Current versus
Junction Temperature Junction Temperature

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429
 MAC97 Series

LL 1N4007
200 VRMS
ADJUST FOR MEASURE
ITM, 60 Hz VAC RS
I

TRIGGER CONTROL
CHARGE
TRIGGER CONTROL –
CHARGE 200 V
CS ADJUST FOR +
MT2 dv/dt(c)
1N914 51 W
NON-POLAR MT1
CL G

Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.

Figure 11. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage (dv/dt)c

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430
 MAC97 Series

TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL

H2A H2A
H2B H2B

W2
H4 H5
T1
L1
H1
W1 W
L T

F1 T2
F2
P2 P2 D

P1
P

Figure 12. Device Positioning on Tape

Specification
Inches Millimeter
Symbol Item Min Max Min Max
D Tape Feedhole Diameter 0.1496 0.1653 3.8 4.2
D2 Component Lead Thickness Dimension 0.015 0.020 0.38 0.51
F1, F2 Component Lead Pitch 0.0945 0.110 2.4 2.8
H Bottom of Component to Seating Plane .059 .156 1.5 4.0
H1 Feedhole Location 0.3346 0.3741 8.5 9.5
H2A Deflection Left or Right 0 0.039 0 1.0
H2B Deflection Front or Rear 0 0.051 0 1.0
H4 Feedhole to Bottom of Component 0.7086 0.768 18 19.5
H5 Feedhole to Seating Plane 0.610 0.649 15.5 16.5
L Defective Unit Clipped Dimension 0.3346 0.433 8.5 11
L1 Lead Wire Enclosure 0.09842 — 2.5 —
P Feedhole Pitch 0.4921 0.5079 12.5 12.9
P1 Feedhole Center to Center Lead 0.2342 0.2658 5.95 6.75
P2 First Lead Spacing Dimension 0.1397 0.1556 3.55 3.95
T Adhesive Tape Thickness 0.06 0.08 0.15 0.20
T1 Overall Taped Package Thickness — 0.0567 — 1.44
T2 Carrier Strip Thickness 0.014 0.027 0.35 0.65
W Carrier Strip Width 0.6889 0.7481 17.5 19
W1 Adhesive Tape Width 0.2165 0.2841 5.5 6.3
W2 Adhesive Tape Position .0059 0.01968 .15 0.5
NOTES:
1. Maximum alignment deviation between leads not to be greater than 0.2 mm.
2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.
3. Component lead to tape adhesion must meet the pull test requirements.
4. Maximum non–cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.
5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.
6. No more than 1 consecutive missing component is permitted.
7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.
8. Splices will not interfere with the sprocket feed holes.

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 MAC97 Series

ORDERING & SHIPPING INFORMATION: MAC97 Series packaging options, Device Suffix
Europe
U.S. Equivalent Shipping Description of TO92 Tape Orientation
MAC97A6RL1, A8RL1 Radial Tape and Reel (2K/Reel) Flat side of TO92 and adhesive tape visible
MAC97–8, Bulk in Box (5K/Box) N/A, Bulk
MAC97A4,A6,A8
MAC97A6RLRF Radial Tape and Reel (2K/Reel) Round side of TO92 and adhesive tape on
reverse side
MAC97A8RLRP, Radial Tape and Fan Fold Box Round side of TO92 and adhesive tape
MAC97A6RLRP (2K/Box) visible
MAC97A8RLRM Radial Tape and Fan Fold Box Flat side of TO92 and adhesive tape visible
(2K/Box)

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MAC210A8, MAC210A10

Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full–wave silicon gate controlled solid–state devices are
needed. Triac type thyristors switch from a blocking to a conducting http://onsemi.com
state for either polarity of applied main terminal voltage with positive
or negative gate triggering. TRIACS
• Blocking Voltage to 600 Volts 10 AMPERES RMS
• All Diffused and Glass Passivated Junctions for Greater Parameter 600 thru 800 VOLTS
Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability MT2 MT1
• Gate Triggering Guaranteed in Four Modes (Quadrants) G

• Device Marking: Logo, Device Type, e.g., MAC210A8, Date Code

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

4
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to +125°C, Sine Wave 50 to VRRM
60 Hz, Gate Open) MAC210A8 600
MAC210A10 800
1
On–State RMS Current IT(RMS) 10 Amps 2
(TC = +70°C) 3
Full Cycle Sine Wave 50 to 60 Hz
TO–220AB
Peak Non–Repetitive Surge Current ITSM 100 Amps CASE 221A
(One Full Cycle, Sine Wave 60 Hz, STYLE 4
TC = +25°C)
Preceded and followed by rated current
PIN ASSIGNMENT
Circuit Fusing Considerations I2t 40 A2s 1 Main Terminal 1
(t = 8.3 ms)
2 Main Terminal 2
Peak Gate Power PGM 20 Watts
(TC = +70°C, Pulse Width = 10 µs) 3 Gate
4 Main Terminal 2
Average Gate Power PG(AV) 0.35 Watt
(TC = +70°C, t = 8.3 ms)
Peak Gate Current IGM 2.0 Amps ORDERING INFORMATION
(TC = +70°C, Pulse Width = 10 µs)
Device Package Shipping
Operating Junction Temperature Range TJ – 40 to °C
+125 MAC210A8 TO220AB 500/Box
Storage Temperature Range Tstg – 40 to °C MAC210A10 TO220AB 500/Box
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.

 Semiconductor Components Industries, LLC, 1999 433 Publication Order Number:

March, 2000 – Rev. 1 MAC210A8/D
 MAC210A8, MAC210A10

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance — Junction to Case RθJC 2.0 °C/W
Thermal Resistance — Junction to Ambient RθJA 62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM,
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C IRRM — — 10 µA
TJ = +125°C — — 2.0 mA
ON CHARACTERISTICS
Peak On-State Voltage VTM — 1.2 1.65 Volts
"
(ITM = 14 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc) IGT mA
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) — 12 50
MT2(+), G(–) — 12 50
MT2(–), G(–) — 20 50
MT2(–), G(+) — 35 75
Gate Trigger Voltage (Continuous dc) VGT Volts
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) — 0.9 2.0
MT2(+), G(–) — 0.9 2.0
MT2(–), G(–) — 1.1 2.0
MT2(–), G(+) — 1.4 2.5
Gate Non–Trigger Voltage (Continuous dc) VGD 0.2 — — Volts
(Main Terminal Voltage = 12 V, RL = 100 Ω,
TJ = +125°C) All Four Quadrants
Holding Current IH — 6.0 50 mA
(Main Terminal Voltage = 12 Vdc, Gate Open,
"
Initiating Current = 200 mA, TC = +25°C)
Turn-On Time tgt — 1.5 — µs
(Rated VDRM, ITM = 14 A)
(IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs)

DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage dv/dt(c) — 5.0 — V/µs
(VD = Rated VDRM, ITM = 14 A, Commutating di/dt = 5.0 A/ms,
Gate Unenergized, TC = 70°C)
Critical Rate of Rise of Off-State Voltage dv/dt — 100 — V/µs
(VD = Rated VDRM, Exponential Voltage Rise,
Gate Open, TC = +70°C)

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 MAC210A8, MAC210A10

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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 MAC210A8, MAC210A10

14.0
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (° C)
130

P (AV) , AVERAGE POWER DISSIPATION

CONDUCTION ANGLE = 360° CONDUCTION ANGLE = 360°
120 12.0

110 10.0

100 8.0

90 6.0

80 4.0

70 2.0

60 0
0 1.0 2.0
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
IT(RMS), RMS ON-STATE CURRENT (AMPS) IT(RMS), RMS ON-STATE CURRENT (AMPS)

Figure 1. Current Derating Figure 2. Power Dissipation

100 100

ITSM , PEAK SURGE CURRENT (AMP)

50
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS)

80

20
60
10
40 CYCLE
5.0
TC = 70°C
TJ = 25°C
20 f = 60 Hz
2.0 TJ = 125°C
Surge is preceded and followed by rated current

1.0 0
1.0 2.0 3.0 5.0 7.0 10
0.5 NUMBER OF CYCLES

Figure 4. Maximum Non–Repetitive Surge Current

0.2
VGT , GATE TRIGGER VOLTAGE (NORMALIZED)

0.1 2.0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
OFF-STATE VOLTAGE = 12 Vdc
1.6
ALL MODES
Figure 3. Maximum On–State Characteristics

1.2

0.8

0.4

0
–60 –40 –20 0 20 40 60 80
TC, CASE TEMPERATURE (°C)

Figure 5. Typical Gate Trigger Voltage

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 MAC210A8, MAC210A10

I GT, GATE TRIGGER CURRENT (NORMALIZED) 2.0 2.8

IH , HOLDING CURRENT (NORMALIZED)

2.4
1.6 OFF-STATE VOLTAGE = 12 Vdc OFF-STATE VOLTAGE = 12 Vdc
ALL MODES ALL MODES
2.0

1.2 1.6

1.2
0.8
0.8
0.4
0.4

0 0
–60 –40 –20 0 20 40 60 80 –60 –40 –20 0 20 40 60 80
TC, CASE TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

Figure 6. Typical Gate Trigger Current Figure 7. Typical Holding Current

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0

0.5

0.2
ZθJC(t) = r(t) • RθJC
0.1

0.05

0.02

0.01
0.1 0.2 0.5 1.0 2.0 5.0 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t, TIME (ms)

Figure 8. Thermal Response

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437
MAC210A8FP, MAC210A10FP

Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting http://onsemi.com
state for either polarity of applied main terminal voltage with positive
or negative gate triggering.
• Blocking Voltage to 800 Volts ISOLATED TRIAC ( )
• All Diffused and Glass Passivated Junctions for Greater Parameter 10 AMPERES RMS
Uniformity and Stability 600 thru 800 VOLTS
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Gate Triggering Guaranteed in Four Modes
• Indicates UL Registered — File #E69369 MT2 MT1

• Device Marking: Logo, Device Type, e.g., MAC210A8FP, Date Code G

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to +125°C, Sine Wave, 50 VRRM
to 60 Hz, Gate Open)
MAC210A8FP 600
MAC210A10FP 800
On-State RMS Current (TC = +70°C)(2) IT(RMS) 10 Amps
Full Cycle Sine Wave 50 to 60 Hz
1
Peak Non–repetitive Surge Current ITSM 100 Amps 2
(One Full Cycle Sine Wave, 3
60 Hz, TC = +70°C)
ISOLATED TO–220 Full Pack
Preceded and followed by rated current
CASE 221C
Circuit Fusing Consideration (t = 8.3 ms) I2t 40 A2s STYLE 3
Peak Gate Power PGM 20 Watts
(TC = +70°C, Pulse Width = 10 µs) PIN ASSIGNMENT
Average Gate Power PG(AV) 0.35 Watt 1 Main Terminal 1
(TC = +70°C, t = 8.3 ms) 2 Main Terminal 2
Peak Gate Current IGM 2.0 Amps 3 Gate
(TC = +70°C, Pulse Width = 10 µsec)
RMS Isolation Voltage (TA = 25°C, V(ISO) 1500 Volts
Relative Humidity p
20%) ( ) ORDERING INFORMATION

Operating Junction Temperature Range TJ –40 to °C Device Package Shipping

+125
MAC210A8FP ISOLATED TO220FP 500/Box
Storage Temperature Range Tstg –40 to °C
MAC210A10FP ISOLATED TO220FP 500/Box
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) The case temperature reference point for all TC measurements is a point on
the center lead of the package as close as possible to the plastic body.

 Semiconductor Components Industries, LLC, 1999 438 Publication Order Number:

February, 2000 – Rev. 1 MAC210A8FP/D
 MAC210A8FP, MAC210A10FP

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 2.2 °C/W
Thermal Resistance, Case to Sink RθCS 2.2 (typ) °C/W
Thermal Resistance, Junction to Ambient RθJA 60 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM,
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C IRRM — — 10 µA
TJ = +125°C — — 2.0 mA
ON CHARACTERISTICS
Peak On-State Voltage VTM — 1.2 1.65 Volts
"
(ITM = 14 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc) IGT mA
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) — 12 50
MT2(+), G(–) — 12 50
MT2(–), G(–) — 20 50
MT2(–), G(+) — 35 75
Gate Trigger Voltage (Continuous dc) VGT Volts
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) — 0.9 2.0
MT2(+), G(–) — 0.9 2.0
MT2(–), G(–) — 1.1 2.0
MT2(–), G(+) — 1.4 2.5
Gate Non–Trigger Voltage (Continuous dc) VGD Volts
(Main Terminal Voltage = 12 V, RL = 100 Ω, TJ = +125°C)
All Four Quadrants 0.2 — —
Holding Current IH — 6.0 50 mA
(Main Terminal Voltage = 12 Vdc, Gate Open,
"
Initiating Current = 200 mA)
Turn-On Time t gt — 1.5 — µs
(Rated VDRM, ITM = 14 A, IGT = 120 mA,
Rise Time = 0.1 µs, Pulse Width = 2 µs)

DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage dv/dt(c) — 5.0 — V/µs
(VD = Rated VDRM, ITM = 14 A, Commutating di/dt = 5.0 A/ms,
Gate Unenergized, TC = +70°C)
Critical Rate of Rise of Off–State Voltage dv/dt — 100 — V/µs
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open,
TC = +70°C)

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439
 MAC210A8FP, MAC210A10FP

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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440
 MAC210A8FP, MAC210A10FP

TYPICAL CHARACTERISTICS
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C)

PD(AV), AVERAGE POWER DISSIPATION (WATTS)

130 14
CONDUCTION ANGLE = 360° CONDUCTION ANGLE = 360°
120 12

110 10

100 8

90 6

80 4

70 2

60 0
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10
IT(RMS), RMS ON–STATE CURRENT (AMPS) IT(RMS), RMS ON–STATE CURRENT (AMPS)

Figure 1. Current Derating Figure 2. Power Dissipation

100 100

ITSM , PEAK SURGE CURRENT (AMP)

i T, INSTANTANEOUS ON–STATE CURRENT (AMPS)

50
80
20
60
10

5 TJ = 25°C CYCLE
40

2 TJ = 125°C TC = 70°C
20
1 f = 60 Hz
SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT
0.5 0
1 2 3 5 7 10
NUMBER OF CYCLES
0.2

0.1
Figure 4. Maximum Nonrepetitive Surge Current
0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 4.4
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
VGT, GATE TRIGGER VOLTAGE (NORMALIZED)

2
Figure 3. Maximum On–State Characteristics
MAIN TERMINAL VOLTAGE = 12 Vdc
1.6
ALL QUADRANTS

1.2

0.8

0.4

0
– 60 – 40 – 20 0 20 40 60 80
TC, CASE TEMPERATURE (°C)

Figure 5. Typical Gate Trigger Voltage

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 MAC210A8FP, MAC210A10FP

I GT, GATE TRIGGER CURRENT (NORMALIZED)

2 2.8

I H , HOLDING CURRENT (NORMALIZED)

MAIN TERMINAL VOLTAGE = 12 Vdc 2.4 MAIN TERMINAL VOLTAGE = 12 Vdc
1.6 ALL QUADRANTS
ALL QUADRANTS
2

1.2
1.6

1.2
0.8
0.8
0.4
0.4

0 0
– 60 – 40 – 20 0 20 40 60 80 – 60 – 40 – 20 0 20 40 60 80
TC, CASE TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

Figure 6. Typical Gate Trigger Current Figure 7. Typical Holding Current

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

0.5

0.2
ZθJC(t) = r(t) • RθJC
0.1

0.05

0.02

0.01
0.1 0.2 0.5 1 2 5 20 50 100 200 500 1k 2k 5k 10 k
t, TIME (ms)

Figure 8. Thermal Response

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442
MAC212A6FP, MAC212A8FP,
MAC212A10FP
Preferred Device

Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are http://onsemi.com
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied main terminal voltage with positive ISOLATED TRIAC ( )
or negative gate triggering.
• Blocking Voltage to 800 Volts 12 AMPERES RMS
• All Diffused and Glass Passivated Junctions for Greater Parameter 400 thru 800 VOLTS
Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability MT2 MT1
• Gate Triggering Guaranteed in Four Modes G
• Indicates UL Registered — File #E69369
• Device Marking: Logo, Device Type, e.g., MAC212A6FP, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to +125°C, Sine Wave, 50 VRRM
to 60 Hz, Gate Open)
MAC212A6FP 400
MAC212A8FP 600
MAC212A10FP 800
1
On-State RMS Current (TC = +85°C)(2) IT(RMS) 12 Amps 2
3
Full Cycle Sine Wave 50 to 60 Hz
Peak Non–repetitive Surge Current ITSM 100 Amps ISOLATED TO–220 Full Pack
(One Full Cycle, Sine Wave, CASE 221C
60 Hz, TC = +85°C) STYLE 3
Preceded and followed by rated current
Circuit Fusing Consideration (t = 8.3 ms) I2t 40 A2s
PIN ASSIGNMENT
1 Main Terminal 1
Peak Gate Power PGM 20 Watts
(TC = +85°C, Pulse Width = 10 µs) 2 Main Terminal 2

Average Gate Power PG(AV) 0.35 Watt 3 Gate

(TC = +85°C, t = 8.3 ms)
Peak Gate Current IGM 2.0 Amps ORDERING INFORMATION
(TC = +85°C, Pulse Width = 10 µs)
Device Package Shipping
RMS Isolation Voltage (TA = 25°C, V(ISO) 1500 Volts
Relative Humidity p
20%) ( ) MAC212A6FP ISOLATED TO220FP 500/Box
Operating Junction Temperature Range TJ –40 to °C MAC212A8FP ISOLATED TO220FP 500/Box
+125
MAC212A10FP ISOLATED TO220FP 500/Box
Storage Temperature Range Tstg –40 to °C
+150
Preferred devices are recommended choices for future use
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking and best overall value.
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) The case temperature reference point for all TC measurements is a point on
the center lead of the package as close as possible to the plastic body.

 Semiconductor Components Industries, LLC, 1999 443 Publication Order Number:

February, 2000 – Rev. 1 MAC212A6FP/D
 MAC212A6FP, MAC212A8FP, MAC212A10FP

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 2.1 °C/W
Thermal Resistance, Case to Sink RθCS 2.2 (typ) °C/W
Thermal Resistance, Junction to Ambient RθJA 60 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM,
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C IRRM — — 10 µA
TJ = +125°C — — 2.0 mA
ON CHARACTERISTICS
Peak On-State Voltage VTM — 1.3 1.75 Volts
"
(ITM = 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc) IGT mA
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) — 12 50
MT2(+), G(–) — 12 50
MT2(–), G(–) — 20 50
MT2(–), G(+) — 35 75
Gate Trigger Voltage (Continuous dc) VGT Volts
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) — 0.9 2.0
MT2(+), G(–) — 0.9 2.0
MT2(–), G(–) — 1.1 2.0
MT2(–), G(+) — 1.4 2.5
Gate Non–Trigger Voltage (Continuous dc) VGD Volts
(Main Terminal Voltage = 12 V, RL = 100 Ω, TJ = +125°C)
All Four Quadrants 0.2 — —
Holding Current IH — 6.0 50 mA
(Main Terminal Voltage = 12 Vdc, Gate Open,
"
Initiating Current = 200 mA)
Turn-On Time t gt — 1.5 — µs
(VD = Rated VDRM, ITM = 17 A, IGT = 120 mA,
Rise Time = 0.1 µs, Pulse Width = 2 µs)

DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage dv/dt(c) — 5.0 — V/µs
(VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms,
Gate Unenergized, TC = +85°C)
Critical Rate of Rise of Off–State Voltage dv/dt — 100 — V/µs
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open,
TC = +85°C)

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444
 MAC212A6FP, MAC212A8FP, MAC212A10FP

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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445
 MAC212A6FP, MAC212A8FP, MAC212A10FP

PD(AV), AVERAGE POWER DISSIPATION (WATTS)

TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (°
125 28

24 α
115 α
20 dc
α = CONDUCTION ANGLE
105 α = 30° 16 α = 180°
90°
60° 60°
95 α 12
90° 30°
α
180° 8.0
85 α = CONDUCTION ANGLE dc
4.0

75 0
0 2.0 4.0 6.0 8.0 10 12 14 0 2.0 4.0 6.0 8.0 10 12 14
IT(RMS), RMS ON–STATE CURRENT (AMPS) IT(RMS), RMS ON–STATE CURRENT (AMPS)

Figure 1. Current Derating Figure 2. Power Dissipation

100 100

ITSM , PEAK SURGE CURRENT (AMP)

i T, INSTANTANEOUS ON–STATE CURRENT (AMPS)

50
80
20
60
10

5 TJ = 25°C CYCLE
40

2 TJ = 125°C TC = 70°C
20
1 f = 60 Hz
SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT
0.5 0
1 2 3 5 7 10
NUMBER OF CYCLES
0.2
Figure 4. Maximum Nonrepetitive Surge Current
0.1
0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 4.4
vT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)

Figure 3. Maximum On–State

VGT, GATE TRIGGER VOLTAGE (NORMALIZED)

2
Characteristics
MAIN TERMINAL VOLTAGE = 12 Vdc
1.6
ALL QUADRANTS

1.2

0.8

0.4

0
– 60 – 40 – 20 0 20 40 60 80
TC, CASE TEMPERATURE (°C)

Figure 5. Typical Gate Trigger Voltage

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446
 MAC212A6FP, MAC212A8FP, MAC212A10FP

I GT, GATE TRIGGER CURRENT (NORMALIZED)

2 2.8

I H , HOLDING CURRENT (NORMALIZED)

MAIN TERMINAL VOLTAGE = 12 Vdc 2.4 MAIN TERMINAL VOLTAGE = 12 Vdc
1.6 ALL QUADRANTS
ALL QUADRANTS
2

1.2
1.6

1.2
0.8
0.8
0.4
0.4

0 0
– 60 – 40 – 20 0 20 40 60 80 – 60 – 40 – 20 0 20 40 60 80
TC, CASE TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

Figure 6. Typical Gate Trigger Current Figure 7. Typical Holding Current

r(t), TRANSIENT THERMAL RESISTANCE(NORMALIZED)

0.5

0.2
ZθJC(t) = r(t) • RθJC
0.1

0.05

0.02

0.01
0.1 0.2 0.5 1 2 5 20 50 100 200 500 1k 2k 5k 10 k
t, TIME (ms)

Figure 8. Thermal Response

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447
MAC212A8, MAC212A10
Preferred Device

Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting http://onsemi.com
state for either polarity of applied anode voltage with positive or
negative gate triggering. TRIACS
• Blocking Voltage to 800 Volts 12 AMPERES RMS
• All Diffused and Glass Passivated Junctions for Greater Parameter 600 thru 800 VOLTS
Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability MT2 MT1
• Gate Triggering Guaranteed in Four Modes G

• Device Marking: Logo, Device Type, e.g., MAC212A8, Date Code

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

4
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to +125°C, Sine Wave 50 to VRRM
60 Hz, Gate Open) MAC212A8 600
MAC212A10 800
1
On-State RMS Current (TC = +85°C) IT(RMS) 12 Amp 2
Full Cycle Sine Wave 50 to 60 Hz 3

Peak Non–repetitive Surge Current ITSM 100 Amp TO–220AB

(One Full Cycle Sine Wave, CASE 221A
60 Hz, TC = +25°C) STYLE 4
Preceded and followed by rated current
Circuit Fusing Considerations I2t 40 A2s PIN ASSIGNMENT
(t = 8.3 ms) 1 Main Terminal 1
Peak Gate Power (TC = +85°C, PGM 20 Watts 2 Main Terminal 2
Pulse Width = 10 µs)
3 Gate
Average Gate Power PG(AV) 0.35 Watt
4 Main Terminal 2
(TC = +85°C, t = 8.3 ms)
Peak Gate Current IGM 2.0 Amp
(TC = +85°C, Pulse Width = 10 µs) ORDERING INFORMATION
Operating Junction Temperature Range TJ – 40 to °C Device Package Shipping
+125
MAC212A8 TO220AB 500/Box
Storage Temperature Range Tstg – 40 to °C
+150 MAC212A10 TO220AB 500/Box
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the Preferred devices are recommended choices for future use
voltage ratings of the devices are exceeded. and best overall value.

 Semiconductor Components Industries, LLC, 1999 448 Publication Order Number:

March, 2000 – Rev. 1 MAC212A8/D
 MAC212A8, MAC212A10

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance — Junction to Case RθJC 2.0 °C/W
Thermal Resistance — Junction to Ambient RθJA 62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM,
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C IRRM — — 10 µA
TJ = +125°C — — 2.0 mA
ON CHARACTERISTICS
Peak On-State Voltage VTM — 1.3 1.75 Volts
"
ITM = 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%
Gate Trigger Current (Continuous dc) IGT mA
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) — 12 50
MT2(+), G(–) — 12 50
MT2(–), G(–) — 20 50
MT2(–), G(+) — 35 75
Gate Trigger Voltage (Continuous dc) VGT Volts
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) — 0.9 2.0
MT2(+), G(–) — 0.9 2.0
MT2(–), G(–) — 1.1 2.0
MT2(–), G(+) — 1.4 2.5
Gate Non–Trigger Voltage (Continuous dc) VGD Volts
(Main Terminal Voltage = 12 V, RL = 100 Ω, TJ = +125°C)
All Four Quadrants 0.2 — —
Holding Current IH — 6.0 50 mA
(Main Terminal Voltage = 12 Vdc, Gate Open,
"
Initiating Current = 200 mA)
Turn-On Time tgt — 1.5 — µs
(VD = Rated VDRM, ITM = 17 A, IGT = 120 mA,
Rise Time = 0.1 µs, Pulse Width = 2 µs)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage dv/dt(c) — 5.0 — V/µs
(VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms,
Gate Unenergized, TC = +85°C)
Critical Rate of Rise of Off-State Voltage dv/dt — 100 — V/µs
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open,
TC = +85°C)

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449
 MAC212A8, MAC212A10

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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450
 MAC212A8, MAC212A10

125 28
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( ° C)

PD(AV), AVERAGE POWER DISSIPATION (WATT)

24
115 α
20 α dc
105 α = 30° α = 180°
16 α = CONDUCTION ANGLE
90°
60° 60°
95 α 12
90° 30°
α 180° 8.0
85 dc
α = CONDUCTION ANGLE 4.0

75 0
0 2.0 4.0 6.0 8.0 10 12 14 0 2.0 4.0 6.0 8.0 10 12 14
IT(RMS), RMS ON-STATE CURRENT (AMP) IT(RMS), RMS ON-STATE CURRENT (AMP)

Figure 1. Current Derating Figure 2. Power Dissipation

100 100

ITSM , PEAK SURGE CURRENT (AMP)

50
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS)

80

20
60
10
40 CYCLE
5.0

TJ = 25°C TC = 70°C
20
2.0 f = 60 Hz
TJ = 125°C
Surge is preceded and followed by rated current
1.0 0
1.0 2.0 3.0 5.0 7.0 10
0.5 NUMBER OF CYCLES

Figure 4. Maximum Non–Repetitive Surge Current

0.2

0.1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
VGT , GATE TRIGGER VOLTAGE (NORMALIZED)

VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 2.0

Figure 3. Maximum On–State Voltage 1.6 MAIN TERMINAL VOLTAGE = 12 Vdc

Characteristics ALL QUADRANTS

1.2

0.8

0.4

0
–60 –40 –20 0 20 40 60 80
TC, CASE TEMPERATURE (°C)

Figure 5. Typical Gate Trigger Voltage

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451
 MAC212A8, MAC212A10

I GT, GATE TRIGGER CURRENT (NORMALIZED) 2.0 2.8

IH , HOLDING CURRENT (NORMALIZED)

MAIN TERMINAL VOLTAGE = 12 Vdc 2.4
1.6 MAIN TERMINAL VOLTAGE = 12 Vdc
ALL QUADRANTS
2.0 ALL QUADRANTS
1.2
1.6

1.2
0.8
0.8
0.4
0.4

0 0
–60 –40 –20 0 20 40 60 80 –60 –40 –20 0 20 40 60 80
TC, CASE TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

Figure 6. Typical Gate Trigger Current Figure 7. Typical Holding Current

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0

0.5

0.2
ZθJC(t) = r(t) • RθJC
0.1

0.05

0.02

0.01
0.1 0.2 0.5 1.0 2.0 5.0 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t, TIME (ms)

Figure 8. Thermal Response

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452
MAC218A6FP,
MAC218A10FP
Preferred Device

Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies.
• Blocking Voltage to 800 Volts http://onsemi.com

• Glass Passivated Junctions for Greater Parameter Uniformity and

ISOLATED TRIAC ( )
Stability
• Isolated TO–220 Type Package for Ease of Mounting 8 AMPERES RMS
• Gate Triggering Guaranteed in Four Modes 400 thru 800 VOLTS
• Indicates UL Registered — File #E69369
• Device Marking: Logo, Device Type, e.g., MAC218A6FP, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) MT2 MT1
Rating Symbol Value Unit G

Peak Repetitive Off–State Voltage(1) VDRM, Volts

(TJ = –40 to +125°C, Sine Wave 50 to VRRM
60 Hz, Gate Open)
MAC218A6FP 400
MAC218A10FP 800
On-State RMS Current (TC = +80°C)(2) IT(RMS) 8.0 Amps
Full Cycle Sine Wave 50 to 60 Hz
Peak Non–Repetitive Surge Current ITSM 100 Amps
(One Full Cycle, 60 Hz, TC = +80°C)
Preceded and followed by rated current
Circuit Fusing Considerations I2t 40 A2s 1
2
(t = 8.3 ms) 3
Peak Gate Power PGM 16 Watts
ISOLATED TO–220 Full Pack
(TC = +80°C, Pulse Width = 10 µs)
CASE 221C
Average Gate Power PG(AV) 0.35 Watt STYLE 3
(TC = +80°C, t = 8.3 ms)
Peak Gate Current IGM 4.0 Amps PIN ASSIGNMENT
(TC = +80°C, Pulse Width = 10 µs) 1 Main Terminal 1
RMS Isolation Voltage (TA = 25°C, V(ISO) 1500 Volts 2 Main Terminal 2
Relative Humidity p
20%) ( ) 3 Gate
Operating Junction Temperature TJ –40 to °C
+125
ORDERING INFORMATION
Storage Temperature Range Tstg –40 to °C
+150 Device Package Shipping
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking MAC218A6FP ISOLATED TO220FP 500/Box
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded. MAC218A10FP ISOLATED TO220FP 500/Box
(2) The case temperature reference point for all TC measurements is a point on
the center lead of the package as close as possible to the plastic body.
Preferred devices are recommended choices for future use
and best overall value.

 Semiconductor Components Industries, LLC, 1999 453 Publication Order Number:

February, 2000 – Rev. 1 MAC218A6FP/D
 MAC218A6FP, MAC218A10FP

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 2.2 °C/W
Thermal Resistance, Case to Sink RθCS 2.2 (typ) °C/W
Thermal Resistance, Junction to Ambient RθJA 60 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM,
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25° IRRM — — 10 µA
TJ = 125°C — — 2.0 mA
ON CHARACTERISTICS
Peak On-State Voltage(1) VTM — 1.7 2.0 Volts
"
(ITM = 11.3 A Peak)
Gate Trigger Current (Continuous dc) (V D = 12 Vdc, R L = 100 Ω) IGT mA
MT2(+), G(+) — — 50
MT2(+), G(–) — — 50
MT2(–), G(–) — — 50
MT2(–), G(+) — — 75
Gate Trigger Voltage (Continuous dc) VGT Volts
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) — 0.9 2.0
MT2(+), G(–) — 0.9 2.0
MT2(–), G(–) — 1.1 2.0
MT2(–), G(+) — 1.4 2.5
Gate Non–Trigger Voltage (Continuous dc) VGD 0.2 — — Volts
(Main Terminal Voltage = 12 V, RL = 100 Ω, TJ = +125°C)
All Four Quadrants
Holding Current IH — — 50 mA
(VD = 12 Vdc, Gate Open, Initiating Current = "200 mA)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutating Off–State Voltage dv/dt(c) — 5.0 — V/µs
(VD = Rated VDRM, ITM = 11.3 A, Commutating
di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C)
Critical Rate of Rise of Off–State Voltage dv/dt — 100 — V/µs
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open,
TJ = 125°C)
(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

http://onsemi.com
454
 MAC218A6FP, MAC218A10FP

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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455
 MAC218A6FP, MAC218A10FP

PD(AV), AVERAGE POWER DISSIPATION (WATTS)

125 10
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C)

115 8

105 6

95 4

85 2

75 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8
IT(RMS), RMS ON–STATE CURRENT (AMPS) IT(RMS), RMS ON–STATE CURRENT (AMPS)

Figure 1. Current Derating Figure 2. Power Dissipation

VGT, NORMALIZED GATE TRIGGER VOLTAGE (VOLTS)

I GT, NORMALIZED GATE TRIGGER CURRENT (mA)

5 1.8
MAIN TERMINAL VOLTAGE = 12 V
MAIN TERMINAL VOLTAGE = 12 V 1.6
3
1.4
2 QUADRANT 4
1.2

1 1 0.8 1
2 QUADRANTS 2
QUADRANT
0.7 3 0.6 3
4
0.5 0.4
– 60 – 40 – 20 0 20 40 60 80 100 120 140 – 60 – 40 – 20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Normalized Gate Trigger Current Figure 4. Normalized Gate Trigger Voltage

2
I H , NORMALIZED HOLDING CURRENT (mA)

GATE OPEN

MAIN TERMINAL #1
POSITIVE
1

0.7

0.5
MAIN TERMINAL #2
POSITIVE
0.3

0.2
– 60 – 40 – 20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)

Figure 5. Normalized Holding Current

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456
MAC223A6, MAC223A8,
MAC223A10
Preferred Device

Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications such as
lighting systems, heater controls, motor controls and power supplies; or http://onsemi.com
wherever full–wave silicon–gate–controlled devices are needed.
• Off–State Voltages to 800 Volts TRIACS
• All Diffused and Glass Passivated Junctions for Parameter Uniformity 25 AMPERES RMS
and Stability
400 thru 800 VOLTS
• Small, Rugged, Thermowatt Construction for Thermal Resistance
and High Heat Dissipation
• Gate Triggering Guaranteed in Four Modes MT2 MT1
• Device Marking: Logo, Device Type, e.g., MAC223A6, Date Code G

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit
4
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to 125°C, Sine Wave 50 to VRRM
60 Hz, Gate Open)
MAC223A6 400
MAC223A8 600
MAC223A10 800
1
On–State Current RMS IT(RMS) 25 A 2
3
Full Cycle Sine Wave 50 to 60 Hz
(TC = 80°C) TO–220AB
Peak Non–repetitive Surge Current ITSM 250 A CASE 221A
(One Full Cycle, 60 Hz, TC = 80°C) STYLE 4
Preceded and followed by rated current
PIN ASSIGNMENT
Circuit Fusing (t = 8.3 ms) I2t 260 A2s
1 Main Terminal 1
Peak Gate Current IGM 2.0 A
(tv 2.0 µsec; TC = +80°C) 2 Main Terminal 2

Peak Gate Voltage VGM "10 Volts 3 Gate

(tv 2.0 µsec; TC = +80°C) 4 Main Terminal 2
Peak Gate Power PGM 20 Watts
(tv 2.0 µsec; TC = +80°C)
ORDERING INFORMATION
Average Gate Power PG(AV) 0.5 Watts
(TC = 80°C, t = 8.3 ms) Device Package Shipping

Operating Junction Temperature Range TJ – 40 to 125 °C MAC223A6 TO220AB 500/Box

Storage Temperature Range Tstg – 40 to 150 °C MAC223A8 TO220AB 500/Box
Mounting Torque — 8.0 in. lb.
MAC223A10 TO220AB 500/Box
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded. Preferred devices are recommended choices for future use
and best overall value.

 Semiconductor Components Industries, LLC, 1999 457 Publication Order Number:

February, 2000 – Rev. 1 MAC223A/D
 MAC223A6, MAC223A8, MAC223A10

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case RθJC 1.2 °C/W
Thermal Resistance, Junction to Ambient RθJA 60 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise indicated; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current TJ = 25°C IDRM, — — 10 µA
(VD = Rated VDRM, VRRM; Gate Open) TJ = 125°C IRRM — — 2.0 mA
ON CHARACTERISTICS
Peak On–State Voltage (ITM = "35 A Peak, Pulse Width v 2 ms, VTM — 1.4 1.85 Volts
v
Duty Cycle 2%)
Gate Trigger Current (Continuous dc) IGT mA
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(–), G(–); MT(+), G(–) — 20 50
MT2(–), G(+) — 30 75
Gate Trigger Voltage (Continuous dc) VGT Volts
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(–), G(–); MT(+), G(–) — 1.1 2.0
MT2(–), G(+) — 1.3 2.5
Gate Non–trigger Voltage VGD Volts
(VD = 12 V, TJ = 125°C, RL = 100 Ω) 0.2 0.4 —
All Quadrants
Holding Current IH — 10 50 mA
(VD = 12 Vdc, Gate Open, Initiating Current = "200 mA)
Turn–On Time tgt — 1.5 — µs
(VD = Rated VDRM, ITM = 35 A Peak, IG = 200 mA)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage dv/dt — 40 — V/µs
(VD = Rated VDRM, Exponential Waveform, TC = 125°C)
Critical Rate of Rise of Commutation Voltage dv/dt(c) — 5.0 — V/µs
(VD = Rated VDRM, ITM = 35 A Peak, Commutating
di/dt = 12.6 A/ms, Gate Unenergized, TC = 80°C)

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458
 MAC223A6, MAC223A8, MAC223A10

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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459
 MAC223A6, MAC223A8, MAC223A10

PD, AVERAGE POWER DISSIPATION (WATTS)

40
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) 125

115
30

105

20
95

85
10

75
0
0 5.0 10 15 20 25
0 5.0 10 15 20 25 IT(RMS), RMS ON–STATE CURRENT (AMPS)
IT(RMS), RMS ON–STATE CURRENT (AMPS)

Figure 1. RMS Current Derating Figure 2. On–State Power Dissipation

NORMALIZED GATE CURRENT

3.0 NORMALIZED GATE VOLTAGE 3.0

2.0 VD = 12 V 2.0 VD = 12 V
RL = 100 Ω RL = 100 Ω
1.0 1.0

0.5 0.5

0.3 0.3
0.2 0.2

0.1 0.1
– 60 – 40 – 20 0 20 40 60 80 100 120 140 – 60 – 40 – 20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical Gate Trigger Current Figure 4. Typical Gate Trigger Voltage
i TM, INSTANTANEOUS ON–STATE CURRENT (AMPS)

200
NORMALIZED HOLD CURRENT

100
2.0 ITM = 200 mA 50
Gate Open TJ = 25°C
1.0 10
5.0
0.5

0.3 1.0
0.2 0.5

0.1 0.1
– 60 – 40 – 20 0 20 40 60 80 100 120 140 0 1.0 2.0 3.0 4.0
TJ, JUNCTION TEMPERATURE (°C) VTM, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)

Figure 5. Typical Hold Current Figure 6. Typical On–State Characteristics

http://onsemi.com
460
MAC223A6FP, MAC223A8FP,
MAC223A10FP
Preferred Device

Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
lighting systems, heater controls, motor controls and power supplies; or
wherever full–wave silicon–gate–controlled devices are needed. http://onsemi.com
• Off–State Voltages to 800 Volts
• All Diffused and Glass Passivated Junctions for Parameter Uniformity ISOLATED TRIAC ( )
and Stability
25 AMPERES RMS
• Small, Rugged Thermowatt Construction for Thermal Resistance and
High Heat Dissipation
400 thru 800 VOLTS
• Gate Triggering Guaranteed in Four Modes
• Indicates UL Registered — File #E69369
• Device Marking: Logo, Device Type, e.g., MAC223A6FP, Date Code MT2 MT1
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to +125°C, Sine Wave 50 to VRRM
60 Hz, Gate Open)
MAC223A6FP 400
MAC223A8FP 600
MAC223A10FP 800
On-State RMS Current (TC = +80°C)(2) IT(RMS) 25 Amps
Full Cycle Sine Wave 50 to 60 Hz
Peak Non–repetitive Surge Current ITSM 250 Amps 1
(One Full Cycle, 60 Hz, TC = 80°C) 2
3
Preceded and followed by rated current
Circuit Fusing (t = 8.3 ms) I2t 260 A2s ISOLATED TO–220 Full Pack
CASE 221C
Peak Gate Power PGM 20 Watts
p
STYLE 3
(t 2 µsec; TC = +80°C)
Average Gate Power PG(AV) 0.5 Watt PIN ASSIGNMENT
(t = 8.3 ms; TC = +80°C) 1 Main Terminal 1
Peak Gate Current IGM 2.0 Amps
(tp 2 µsec; TC = +80°C)
2 Main Terminal 2

"10
3 Gate
Peak Gate Voltage VGM Volts
(tp 2 µsec; TC = +80°C)
RMS Isolation Voltage (TA = 25°C, V(ISO) 1500 Volts ORDERING INFORMATION
Relative Humidity p
20%) ( )
Device Package Shipping
Operating Junction Temperature TJ –40 to °C
MAC223A6FP ISOLATED TO220FP 500/Box
+125
MAC223A8FP ISOLATED TO220FP 500/Box
Storage Temperature Range Tstg –40 to °C
+150 MAC223A10FP ISOLATED TO220FP 500/Box
Mounting Torque — 8.0 in. lb.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking Preferred devices are recommended choices for future use
voltages shall not be tested with a constant current source such that the and best overall value.
voltage ratings of the devices are exceeded.
(2) The case temperature reference point for all TC measurements is a point on
the center lead of the package as close as possible to the plastic body.

 Semiconductor Components Industries, LLC, 1999 461 Publication Order Number:

February, 2000 – Rev. 1 MAC223A6FP/D
 MAC223A6FP, MAC223A8FP, MAC223A10FP

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 1.2 °C/W
Thermal Resistance, Case to Sink RθCS 2.2 °C/W
Thermal Resistance, Junction to Ambient RθJA 60 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current TJ = 25°C IDRM, — — 10 µA
(VD = Rated VDRM, VRRM; Gate Open) TJ = 125°C IRRM — — 2.0 mA
ON CHARACTERISTICS
Peak On-State Voltage VTM — 1.4 1.85 Volts
"
(ITM = 35 A Peak, Pulse Width p 2 ms; Duty Cycle p 2%)
Gate Trigger Current (Continuous dc) IGT mA
(V D = 12 V, R L = 100 Ω)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) — 20 50
MT2(–), G(+) — 30 75
Gate Trigger Voltage (Continuous dc) VGT Volts
(V D = 12 V, R L = 100 Ω)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) — 1.1 2.0
MT2(–), G(+) — 1.3 2.5
Gate Non–trigger Voltage VGD Volts
(VD = 12 V, TJ = 125°C, RL = 100 Ω) 0.2 0.4 —
All Quadrants
Holding Current IH — 10 50 mA
(VD = 12 Vdc, Gate Open, Initiating Current = "200 mA)
Gate Controlled Turn–On Time t gt — 1.5 — µs
(VD = Rated VDRM, ITM = 35 A Peak, IG = 200 mA)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage dv/dt — 40 — V/µs
(VD = Rated VDRM, Exponential Waveform, TC = 125°C)
Critical Rate of Rise of Commutation Voltage dv/dt(c) — 5.0 — V/µs
(VD = Rated VDRM, ITM = 35 A Peak, Commutating
di/dt = 12.6 A/ms, Gate Unenergized, TC = 80°C)

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462
 MAC223A6FP, MAC223A8FP, MAC223A10FP

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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463
 MAC223A6FP, MAC223A8FP, MAC223A10FP

TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C)

125 40

PD(AV) , AVERAGE POWER DISSIPATION (WATTS)

115
30
105

95 20

85
10
75

0
0 5 10 15 20 25 0 5 10 15 20 25
IT(RMS), RMS ON–STATE CURRENT (AMPS) IT(RMS), RMS ON–STATE CURRENT (AMPS)

Figure 1. RMS Current Derating Figure 2. On–State Power Dissipation

NORMALIZED GATE CURRENT

3 NORMALIZED GATE VOLTAGE 3

2 VD = 12 V 2 VD = 12 V
RL = 100W RL = 100W
1 1

0.5 0.5

0.3 0.3
0.2 0.2

0.1 0.1
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical Gate Trigger Current Figure 4. Typical Gate Trigger Voltage
i TM , INSTANTANEOUS ON–STATE CURRENT (AMPS)

200
NORMALIZED HOLD CURRENT

100
2 ITM = 200 mA 50
TJ = 25°C
GATE OPEN
1 10
5
0.5

0.3 1
0.2 0.5

0.1 0.1
–60 –40 –20 0 20 40 60 80 100 120 140 0 1 2 3 4
TJ, JUNCTION TEMPERATURE (°C) vTM, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)

Figure 5. Typical Hold Current Figure 6. Typical On–State Characteristics

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464
MAC224A Series
Preferred Device

Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications such as
lighting systems, heater controls, motor controls and power supplies.
• Blocking Voltage to 800 Volts http://onsemi.com
• All Diffused and Glass-Passivated Junctions for Parameter Uniformity
and Stability
TRIACS
• Gate Triggering Guaranteed in Four Modes
40 AMPERES RMS
• High Current and Surge Ratings
• Device Marking: Logo, Device Type, e.g., MAC224A4, Date Code 200 thru 800 VOLTS

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) MT2 MT1

Rating Symbol Value Unit G
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to 125°C, Sine Wave 50 to VRRM
60 Hz, Gate Open)
MAC224A4 200
4
MAC224A6 400
MAC224A8 600
MAC224A10 800

On–State RMS Current (TC = 75°C)(2) IT(RMS) 40 A

(Full Cycle Sine Wave 50 to 60 Hz)
1
2
Peak Non–repetitive Surge Current ITSM 350 A 3
(One Full Cycle, 60 Hz, TJ = 125°C)
TO–220AB
Circuit Fusing Considerations I2t 500 A2s
CASE 221A
(t = 8.3 ms)
STYLE 4
Peak Gate Current IGM "2.0 A
(Pulse Width v
2.0 µsec; TC = 75°C) PIN ASSIGNMENT
Peak Gate Voltage VGM "10 Volts 1 Main Terminal 1
(Pulse Width v
2.0 µsec; TC = 75°C)
2 Main Terminal 2
Peak Gate Power PGM 20 Watts
(Pulse Width v
2.0 µsec; TC = 75°C)
3
4
Gate
Main Terminal 2
Average Gate Power PG(AV) 0.5 Watts
(TC = 75°C, t = 8.3 ms)
Operating Junction Temperature Range TJ – 40 to 125 °C ORDERING INFORMATION

Storage Temperature Range Tstg – 40 to 150 °C Device Package Shipping

Mounting Torque — 8.0 in. lb. MAC224A4 TO220AB 500/Box
(1) VDRM, VRRM for all types can be applied on a continuous basis. Blocking
MAC224A6 TO220AB 500/Box
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded. MAC224A8 TO220AB 500/Box
(2) This device is rated for use in applications subject to high surge conditions.
Care must be taken to insure proper heat sinking when the device is to be MAC224A10 TO220AB 500/Box
used at high sustained currents. (See Figure 1 for maximum case
temperatures.)
Preferred devices are recommended choices for future use
and best overall value.

 Semiconductor Components Industries, LLC, 1999 465 Publication Order Number:

February, 2000 – Rev. 1 MAC224A/D
 MAC224A Series

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance — Junction to Case RθJC 1.0 °C/W
Thermal Resistance — Junction to Ambient RθJA 60
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM,
(Rated VDRM, VRRM; Gate Open) TJ = 25°C IRRM — — 10 µA
TJ = 125°C — — 2.0 mA
ON CHARACTERISTICS
Peak On–State Voltage VTM — 1.4 1.85 Volts
"
(ITM = 56 A Peak, Pulse Width p 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc) IGT mA
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(+), G(–); MT2(+), G(–) — 25 50
MT2(–), G(+) — 40 75
Gate Trigger Voltage (Continuous dc) VGT Volts
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(–), G(–); MT(+), G(–) — 1.1 2.0
MT2(–), G(+) — 1.3 2.5
Gate Non-Trigger Voltage VGD 0.2 — — Volts
(VD = 12 V, TJ = 125°C, RL = 100 Ω)
All Quadrants
Holding Current IH — 30 75 mA
(VD = 12 Vdc, Gate Open, Initiating Current = "200 mA)
Gate Controlled Turn-On Time tgt — 1.5 — µs
(VD = Rated VDRM, ITM = 56 A Peak, IG = 200 mA)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage dv/dt — 50 — V/µs
(VD = Rated VDRM, Exponential Waveform, TC = 125°C)
Critical Rate of Rise of Commutation Voltage dv/dt(c) — 5.0 — V/µs
(VD = Rated VDRM, ITM = 56 A Peak, Commutating
di/dt = 20.2 A/ms, Gate Unenergized, TC = 75°C)

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466
 MAC224A Series

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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467
 MAC224A Series

125 60
T C, MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C)

PD , AVERAGE POWER DISSIPATION (WATTS)

120 54

115 48
110 42
105 36
100 30
95 24
90 18
85 12
80 6.0
75 0
0 5.0 10 15 20 25 30 35 40 0 5.0 10 15 20 25 30 35 40
IT(RMS), RMS ON-STATE CURRENT (AMPS)* IT(RMS), RMS ON-STATE CURRENT (AMPS)*

Figure 1. RMS Current Derating Figure 2. On–State Power Dissipation

*This device is rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when the device
is to be used at high sustained currents.
NORMALIZED GATE CURRENT

NORMALIZED GATE VOLTAGE

3.0 3.0
2.0 2.0
VD = 12 V VD = 12 V
RL = 100 Ω RL = 100 Ω
1.0 1.0

0.5 0.5
0.3 0.3
0.2 0.2

0.1 0.1
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical Gate Trigger Current Figure 4. Typical Gate Trigger Voltage

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468
 MAC224A Series

I TM, INSTANTANEOUS ON-STATE CURRENT (AMPS)

NORMALIZED HOLD CURRENT 1000

2.0 100
ITM = 200 mA
Gate Open
1.0 TJ = 25°C

0.5 10

0.3
0.2

0.1 1.0
–60 –40 –20 0 20 40 60 80 100 120 140 0 1.0 2.0 3.0
TJ, JUNCTION TEMPERATURE (°C) VTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

Figure 5. Typical Holding Current Figure 6. Typical On–State Characteristics

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

0.5

0.2
ZθJC(t) = r(t) • RθJC
0.1

0.05

0.02

0.01
0.1 0.2 0.5 1 2 5 20 50 100 200 500 1k 2k 5k 10 k
t, TIME (ms)

Figure 7. Thermal Response

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469
MAC228A Series
Preferred Device

Sensitive Gate Triacs

Silicon Bidirectional Thyristors
Designed primarily for industrial and consumer applications for full
wave control of ac loads such as appliance controls, heater controls,
motor controls, and other power switching applications.
http://onsemi.com
• Sensitive Gate Triggering in 3 Modes for AC Triggering on Sinking
Current Sources
TRIACS
• Four Mode Triggering for Drive Circuits that Source Current
• All Diffused and Glass–Passivated Junctions for Parameter 8 AMPERES RMS
Uniformity and Stability 200 thru 800 VOLTS
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance and High Heat Dissipation
• Center Gate Geometry for Uniform Current Spreading MT2 MT1
G
• Device Marking: Logo, Device Type, e.g., MAC228A4, Date Code

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit 4
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to 110°C, Sine Wave, 50 to VRRM
60 Hz, Gate Open) MAC228A4 200
MAC228A6 400
MAC228A8 600
MAC228A10 800 1
2
On-State RMS Current (TC = 80°C) IT(RMS) 8.0 Amps 3
Full Cycle Sine Wave 50 to 60 Hz
TO–220AB
Peak Non–Repetitive Surge Current ITSM 80 Amps CASE 221A
(One Full Cycle Sine Wave, STYLE 4
60 Hz, TJ = 110°C)
Circuit Fusing Considerations I2t 26 A2s PIN ASSIGNMENT
(t = 8.3 ms) 1 Main Terminal 1
Peak Gate Current IGM "2.0 Amps
v
2 Main Terminal 2
(t 2 µs, TC = 80°C)
3 Gate
Peak Gate Voltage VGM "10 Volts
(tv 2 µs, TC = 80°C)
4 Main Terminal 2

Peak Gate Power PGM 20 Watts

(tv 2 µs, TC = 80°C) ORDERING INFORMATION
Average Gate Power PG(AV) 0.5 Watt
v
Device Package Shipping
(t 8.3 ms, TC = 80°C)
MAC228A4 TO220AB 500/Box
Operating Junction Temperature Range TJ – 40 to 110 °C
MAC228A6 TO220AB 500/Box
Storage Temperature Range Tstg – 40 to 150 °C
Mounting Torque — 8.0 in. lb. MAC228A8 TO220AB 500/Box

(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking MAC228A10 TO220AB 500/Box
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred devices are recommended choices for future use
and best overall value.

 Semiconductor Components Industries, LLC, 1999 470 Publication Order Number:

February, 2000 – Rev. 1 MAC228A/D
 MAC228A Series

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance — Junction to Case RθJC 2.0 °C/W
Thermal Resistance — Junction to Ambient RθJA 62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM,
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C IRRM — — 10 µA
TJ = 110°C — — 2.0 mA
ON CHARACTERISTICS
Peak On-State Voltage VTM — — 1.8 Volts
"
(ITM = 11 A Peak, Pulse Width v 2 ms, Duty Cycle v 2%)
Gate Trigger Current (Continuous dc) IGT mA
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–) — — 5.0
MT2(–), G(+) — — 10
Gate Trigger Voltage (Continuous dc) VGT Volts
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–) — — 2.0
MT2(–), G(+) — — 2.5
Gate Non–Trigger Voltage (Continuous dc) VGD 0.2 — — Volts
(VD = 12 V, TC = 110°C, RL = 100 Ω)
All Four Quadrants
Holding Current IH — — 15 mA
(VD = 12 Vdc, Initiating Current = "200 mA, Gate Open)
Gate–Controlled Turn–On Time tgt — 1.5 — µs
(VD = Rated VDRM, ITM = 16 A Peak, IG = 30 mA)

DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage dv/dt — 25 — V/µs
(VD = Rated VDRM, Exponential Waveform, TC = 110°C)
Critical Rate of Rise of Commutation Voltage dv/dt(c) — 5.0 — V/µs
(VD = Rated VDRM, ITM = 11.3 A,
Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C)

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471
 MAC228A Series

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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472
 MAC228A Series

110 10
dc
α
a = 30° a = 180°

P(AV) , AVERAGE POWER (WATTS)

TC , CASE TEMPERATURE (° C)

104 8.0
60° α
90°
α = CONDUCTION ANGLE 120°
98 120° 6.0
90°
180° TJ ≈ 110°C
60°
92 4.0
α 30°

α
86 2.0
dc
α = CONDUCTION ANGLE
80 0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
IT(RMS), RMS ON–STATE CURRENT (AMP) IT(RMS), RMS ON–STATE CURRENT (AMP)

Figure 1. RMS Current Derating Figure 2. On–State Power Dissipation

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473
MAC229A8FP,
MAC229A10FP

Triacs
Silicon Bidirectional Thyristors
Designed primarily for industrial and consumer applications for full
wave control of ac loads such as appliance controls, heater controls,
motor controls, and other power switching applications. http://onsemi.com
• All Diffused and Glass–Passivated Junctions for Parameter Uniformity
and Stability ISOLATED TRIAC ( )
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance 8 AMPERES RMS
and High Heat Dissipation
• Center Gate Geometry for Uniform Current Spreading 600 thru 800 VOLTS
• Gate Triggering Guaranteed in Four Modes
• Indicates UL Registered — File #E69369
• Device Marking: Logo, Device Type, e.g., MAC229A8FP, Date Code MT2 MT1
G

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to 110°C, Sine Wave 50 to VRRM
60 Hz, Gate Open)
MAC229A8FP 600
MAC229A10FP 800
On-State RMS Current (TC = 80°C) IT(RMS) 8.0 Amps
Full Cycle Sine Wave 50 to 60 Hz
Peak Non–Repetitive Surge Current ITSM 80 Amps 1
(One Full Cycle Sine Wave, 2
3
60 Hz, TJ = 110°C)
Circuit Fusing Consideration I2t 26 A2s ISOLATED TO–220 Full Pack
(t = 8.3 ms) CASE 221C

"2.0
STYLE 3
Peak Gate Current IGM Amps
p
(t 2 µs,TC = 80°C)
PIN ASSIGNMENT
Peak Gate Voltage VGM "10 Volts
p
(t 2 µs, TC = 80°C)
1 Main Terminal 1
2 Main Terminal 2
Peak Gate Power PGM 20 Watts
p
(t 2 µs,TC = 80°C) 3 Gate

Average Gate Power PG(AV) 0.5 Watt

(TC = 80°C, t p
8.3 ms) ORDERING INFORMATION
RMS Isolation Voltage (TA = 25°C, V(ISO) 1500 Volts
Relative Humidity p
20%) ( )
Device Package Shipping
MAC229A8FP ISOLATED TO220FP 500/Box
Operating Junction Temperature Range TJ –40 to 110 °C
MAC229A10FP ISOLATED TO220FP 500/Box
Storage Temperature Range Tstg –40 to 150 °C
Mounting Torque — 8.0 in. lb.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) The case temperature reference point for all TC measurements is a point on
the center lead of the package as close as possible to the plastic body.

 Semiconductor Components Industries, LLC, 1999 474 Publication Order Number:

March, 2000 – Rev. 2 MAC229A8FP/D
 MAC229A8FP, MAC229A10FP

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 2.2 °C/W
Thermal Resistance, Case to Sink RθCS 2.2 °C/W
Thermal Resistance, Junction to Ambient RθJA 60 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current(1) IDRM,
(VD = Rated VDRM, VRRM; Open Gate) TJ = 25°C IRRM — — 10 µA
TJ = 110°C — — 2.0 mA
ON CHARACTERISTICS
Peak On-State Voltage VTM — — 1.8 Volts
"
(ITM = 11 A Peak, Pulse Width p 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc) IGT mA
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–) — — 10
MT2(–), G(+) — — 20
Gate Trigger Voltage (Continuous dc) VGT Volts
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–) — — 2.0
MT2(–), G(+) — — 2.5
Gate Non–Trigger Voltage (Continuous dc) VGD 0.2 — — Volts
(VD = 12 V, TC = 110°C, RL = 100 Ω)
All Four Quadrants
Holding Current IH — — 15 mA
(VD = 12 Vdc, Initiating Current = "200 mA, Gate Open)
Gate–Controlled Turn–On Time t gt — 1.5 — µs
(VD = Rated VDRM, ITM = 16 A Peak, IG = 30 mA)

DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage dv/dt — 25 — V/µs
(VD = Rated VDRM, Exponential Waveform, TC = 110°C)
Critical Rate of Rise of Commutation Voltage dv/dt(c) — 5.0 — V/µs
(VD = Rated VDRM, ITM = 11.3 A,
Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C)
(1) Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage
applied exceeds the rated blocking voltage.

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475
 MAC229A8FP, MAC229A10FP

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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476
 MAC229A8FP, MAC229A10FP

110 10
dc
α
a = 30° a = 180°

P(AV) , AVERAGE POWER (WATTS)

TC , CASE TEMPERATURE (° C)

104 8.0
60° α
90°
α = CONDUCTION ANGLE 120°
98 120° 6.0
90°
180° TJ ≈ 110°C
60°
92 4.0
α 30°

α
86 2.0
dc
α = CONDUCTION ANGLE
80 0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
IT(RMS), RMS ON–STATE CURRENT (AMP) IT(RMS), RMS ON–STATE CURRENT (AMP)

Figure 1. RMS Current Derating Figure 2. On–State Power Dissipation

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477
MAC320A8FP
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
solid-state relays, motor controls, heating controls and power supplies;
or wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting http://onsemi.com
state for either polarity of applied anode voltage with positive or
negative gate triggering.
• Blocking Voltage to 600 Volts ISOLATED TRIACs ( )
• All Diffused and Glass Passivated Junctions for Greater Parameter 20 AMPERES RMS
Uniformity and Stability
600 VOLTS
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Gate Triggering Guaranteed in Four Modes
• Indicates UL Registered — File #E69369 MT2 MT1

• Device Marking: Logo, Device Type, e.g., MAC320A8FP, Date Code G

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, 600 Volts
(TJ = –40 to +125°C, Sine Wave 50 to VRRM
60 Hz, Gate Open)
On-State RMS Current (TC = +75°C, IT(RMS) 20 Amps
Full Cycle Sine Wave 50 to 60 Hz)(2)
Peak Non–Repetitive Surge Current ITSM 150 Amps
1
(One Full Cycle, 60 Hz, TC = +75°C, 2
preceded and followed by rated 3
current)
ISOLATED TO–220 Full Pack
Peak Gate Power PGM 20 Watts CASE 221C
(T C = +75°C, Pulse Width = 2 µs) STYLE 3
Peak Gate Voltage VGM 10 Volts
(T C = +75°C, Pulse Width = 2 µs) PIN ASSIGNMENT
Average Gate Power PG(AV) 0.5 Watt 1 Main Terminal 1
(TC = +75°C, t = 8.3 ms) 2 Main Terminal 2
Peak Gate Current IGM 2.0 Amps 3 Gate
(T C = +75°C, Pulse Width = 2 µs)
RMS Isolation Voltage (TA = 25°C, V(ISO) 1500 Volts
Relative Humidity p
20%) ( ) ORDERING INFORMATION

Operating Junction Temperature Range TJ –40 to °C Device Package Shipping

+125
MAC320A8FP ISOLATED TO220FP 500/Box
Storage Temperature Range Tstg –40 to °C
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) The case temperature reference point for all TC measurements is a point on
the center lead of the package as close as possible to the plastic body.

 Semiconductor Components Industries, LLC, 1999 478 Publication Order Number:

February, 2000 – Rev. 1 MAC320A8FP/D
 MAC320A8FP

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 1.8 °C/W
Thermal Resistance, Case to Sink RθCS 2.2 °C/W
Thermal Resistance, Junction to Ambient RθJA 60 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
Peak Repetitive Blocking Current IDRM,
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C IRRM — — 10 µA
TJ = +125°C — — 2.0 mA
OFF CHARACTERISTICS
Peak On-State Voltage VTM — 1.4 1.7 Volts
"
(ITM = 28 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%)
ON CHARACTERISTICS
Peak Gate Trigger Current IGT mA
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) — — 50
MT2(+), G(–) — — 50
MT2(–), G(–) — — 50
MT2(–), G(+) — — 75
Peak Gate Trigger Voltage VGT Volts
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) — 0.9 2.0
MT2(+), G(–) — 0.9 2.0
MT2(–), G(–) — 1.1 2.0
MT2(–), G(+) — 1.4 2.5
Gate Non–Trigger Voltage VGD 0.2 — — Volts
(Main Terminal Voltage = 12 V, RL = 100 Ω , TJ = +110°C)
All Four Quadrants
Holding Current IH — 6.0 40 mA
(Main Terminal Voltage = 12 Vdc, Gate Open,
"
Initiating Current = 200 mA)
Turn-On Time t gt — 1.5 10 µs
(VD = Rated VDRM, ITM = 28 A, IGT = 120 mA,
Rise Time = 0.1 µs, Pulse Width = 2 µs)

DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage dv/dt(c) — 5.0 — V/µs
(VD = Rated VDRM, ITM = 28 A, Commutating di/dt = 10 A/ms,
Gate Unenergized, TC = +75°C)

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479
 MAC320A8FP

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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480
 MAC320A8FP

TYPICAL CHARACTERISTICS
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (°C)
130 40

120 α

PD(AV) , AVERAGE POWER (WATT)

35
α = 30° α dc
110 60° 30 180°
90° α = Conduction 90°
100 25 Angle
90 20

80 α 15
180° 60°
70 α dc 10 α = 30°
60 α = Conduction 5.0
Angle
50 0
0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20
IT(RMS), RMS ON-STATE CURRENT (AMP) IT(RMS), RMS ON-STATE CURRENT (AMP)

Figure 1. RMS Current Derating Figure 2. On–State Power Dissipation

VGTM , GATE TRIGGER VOLTAGE (NORMALIZED)

3 100
MAIN TERMINAL VOLTAGE = 12 Vdc
ALL QUADRANTS 70
2
50
TJ = 25°C
125°C
30
1
20
0.7
i TM , INSTANTANEOUS FORWARD CURRENT (AMP)

0.5
10

0.3 7
–60 –40 –20 0 20 40 60 80 100 120 140
5
TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical Gate Trigger Voltage 3

2
I GTM , GATE TRIGGER CURRENT (NORMALIZED)

3
MAIN TERMINAL VOLTAGE = 12 Vdc
ALL QUADRANTS
2 1

0.7

0.5
1

0.3
0.7

0.2
0.5

0.3 0.1
–60 –40 –20 0 20 40 60 80 100 120 140 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 4.4
TJ, JUNCTION TEMPERATURE (°C) vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

Figure 4. Typical Gate Trigger Current Figure 5. Maximum On–State Characteristics

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 MAC320A8FP

3 300
GATE OPEN
I H , HOLDING CURRENT (NORMALIZED)

TSM , PEAK SURGE CURRENT (AMP)

APPLIES TO EITHER DIRECTION
2 200

1 100

0.7 70

0.5 50
TC = 80°C
f = 60 Hz
SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT
0.3 30
–60 –40 –20 0 20 40 60 80 100 120 140 1 2 3 5 7 10
TJ, JUNCTION TEMPERATURE (°C) NUMBER OF CYCLES

Figure 6. Typical Holding Current Figure 7. Maximum Nonrepetitive Surge Current

1
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

0.5

0.2
ZθJC(t) = r(t) • RθJC
0.1

0.05

0.02

0.01
0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1k 2k 5k 10 k
t, TIME (ms)

Figure 8. Thermal Response

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482
MAC997 Series
Preferred Device

Sensitive Gate Triacs

Silicon Bidirectional Thyristors
Designed for use in solid state relays, MPU interface, TTL logic and
any other light industrial or consumer application. Supplied in an
inexpensive TO–92 package which is readily adaptable for use in
automatic insertion equipment. http://onsemi.com
• One–Piece, Injection–Molded Package
• Blocking Voltage to 600 Volts TRIACS
• Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all 0.8 AMPERE RMS
possible Combinations of Trigger Sources, and especially for Circuits 400 thru 600 VOLTS
that Source Gate Drives
• All Diffused and Glassivated Junctions for Maximum Uniformity of
Parameters and Reliability
• Improved Noise Immunity (dv/dt Minimum of 20 V/µsec at 110°C) MT2 MT1
• Commutating di/dt of 1.6 Amps/msec at 110°C G
• High Surge Current of 8 Amps
• Device Marking: Device Type, e.g., for MAC997A6: MAC7A6, Date
Code

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit
Peak Repetitive Off-State Voltage VDRM, Volts 1
(TJ = –40 to +110°C)(1) VRRM 2
3
Sine Wave 50 to 60 Hz, Gate Open
MAC997A6,B6 400 TO–92 (TO–226AA)
MAC997A8,B8 600 CASE 029
On-State RMS Current IT(RMS) 0.8 Amp STYLE 12
Full Cycle Sine Wave 50 to 60 Hz
(TC = +50°C) PIN ASSIGNMENT
Peak Non–Repetitive Surge Current ITSM 8.0 Amps 1 Main Terminal 1
One Full Cycle, Sine Wave 60 Hz
(TC = 110°C) 2 Gate
3 Main Terminal 2
Circuit Fusing Considerations (t = 8.3 ms) I2t .26 A2s
Peak Gate Voltage VGM 5.0 Volts
(tv 2.0 ms, TC = +80°C)
ORDERING INFORMATION
Peak Gate Power PGM 5.0 Watts
(tv 2.0 ms, TC = +80°C)
See detailed ordering and shipping information in the package
dimensions section on page 490 of this data sheet.
Average Gate Power PG(AV) 0.1 Watt
(TC = 80°C, t v
8.3 ms) Preferred devices are recommended choices for future use
and best overall value.
Peak Gate Current IGM 1.0 Amp
(tv 2.0 ms, TC = +80°C)
Operating Junction Temperature Range TJ –40 to °C
+110
Storage Temperature Range Tstg –40 to °C
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.

 Semiconductor Components Industries, LLC, 2000 483 Publication Order Number:

May, 2000 – Rev. 2 MAC997/D
 MAC997 Series

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 75 °C/W
Thermal Resistance, Junction to Ambient RθJA 200 °C/W
Maximum Lead Temperature for Soldering Purposes for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM, IRRM
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C — — 10 µA
TJ = +110°C — — 100 µA
ON CHARACTERISTICS
Peak On–State Voltage VTM — — 1.9 Volts
"
(ITM = .85 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%)
Gate Trigger Current (Continuous dc) IGT mA
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) MAC997A6,A8 — — 5.0
MT2(+), G(–) — — 5.0
MT2(–), G(–) — — 5.0
MT2(–), G(+) — — 7.0

MT2(+), G(+) MAC997B6,B8 — — 3.0

MT2(+), G(–) — — 3.0
MT2(–), G(–) — — 3.0
MT2(–), G(+) — — 5.0

Latching Current (VD = 12 V, IG = 10 mA) IL mA

MT2(+), G(+) All Types — 1.6 15
MT2(+), G(–) All Types — 10.5 20
MT2(–), G(–) All Types — 1.5 15
MT2(–), G(+) All Types — 2.5 15
Gate Trigger Voltage (Continuous dc) VGT Volts
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) All Types — .66 2.0
MT2(+), G(–) All Types — .77 2.0
MT2(–), G(–) All Types — .84 2.0
MT2(–), G(+) All Types — .88 2.5
Gate Non–Trigger Voltage VGD 0.1 — — Volts
(VD = 12 V, RL = 100 Ohms, TJ = 110°C)
All Four Quadrants
Holding Current IH — 1.5 10 mA
(VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)
Turn-On Time tgt — 2.0 — µs
(VD = Rated VDRM, ITM = 1.0 A pk, IG = 25 mA)

DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current di/dt(c) 1.6 — — A/ms
(VD = 400 V, ITM = .84 A, Commutating dv/dt = 1.5 V/µs, Gate Open,
TJ = 110°C, f = 250 Hz, with Snubber)
Critical Rate of Rise of Off–State Voltage dv/dt 20 60 — V/µs
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 110°C)
Repetitive Critical Rate of Rise of On–State Current di/dt — — 10 A/µs
Pulse Width = 20 µs, IPKmax = 15 A, diG/dt = 1 A/µs, f = 60 Hz

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484
 MAC997 Series

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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485
 MAC997 Series

110 110
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (°C)
100 T = 30° 100 T = 30°

I T(RMS) , MAXIMUM ALLOWABLE

AMBIENT TEMPERATURE (°C)
90 60°
90 60°
DC DC 90°
90° 80
80
180° 70 180°
70 120° 120°
60
60
α 50 α
50
α 40 α
40 30
α = CONDUCTION ANGLE α = CONDUCTION ANGLE
30 20
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4
IT(RMS), RMS ON–STATE CURRENT (AMPS) IT(RMS), RMS ON–STATE CURRENT (AMPS)

Figure 1. RMS Current Derating Figure 2. RMS Current Derating

P(AV), MAXIMUM AVERAGE POWER DISSIPATION (WATTS)

1.2 6.0

α 4.0
1.0
DC
α TJ = 110°C
0.8 180°
2.0
α = CONDUCTION ANGLE 120° 25°C
0.6

1.0
0.4
ITM, INSTANTANEOUS ON-STATE CURRENT (AMP)

90°
60° 0.6
0.2
T = 30° 0.4
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
IT(RMS), RMS ON–STATE CURRENT (AMPS)
0.2
Figure 3. Power Dissipation

0.1

0.06

0.04

0.02

0.01

0.006
0.4 1.2 2.0 2.8 3.6 4.4 5.2 6.0
VTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

Figure 4. On–State Characteristics

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486
 MAC997 Series

R(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0 10

I TSM , PEAK SURGE CURRENT (AMPS)

5.0
Q Q
Z JC(t) = R JC(t) @ r(t)

0.1 3.0

TJ = 110°C
2.0 f = 60 Hz
CYCLE

Surge is preceded and followed by rated current.

0.01 1.0
0.1 1.0 10 100 1S103 1S104 1.0 2.0 3.0 5.0 10 30 50 100
t, TIME (ms) NUMBER OF CYCLES

Figure 5. Transient Thermal Response Figure 6. Maximum Allowable Surge Current

100 1.2
I GT , GATE TRIGGER CURRENT (mA)

1.1 Q4

VGT, GATE TRIGGER VOLTAGE (V)

1.0 Q3
Q4 Q2
10 0.9
Q3
0.8 Q1
Q2
0.7
Q1
1 0.6

0.5
0.4
0 0.3
–40 –25 –10 5 20 35 50 65 80 95 110 –40 –25 –10 5 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Typical Gate Trigger Current versus Figure 8. Typical Gate Trigger Voltage versus
Junction Temperature Junction Temperature

100 10
IL , LATCHING CURRENT (mA)

IH , HOLDING CURRENT (mA)

10 Q2
MT2 Negative
1
Q4 Q3 MT2 Positive
1
Q1

0 0.1
–40 –25 –10 5 20 35 50 65 80 95 110 –40 –25 –10 5 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 9. Typical Latching Current versus Figure 10. Typical Holding Current versus
Junction Temperature Junction Temperature

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487
 MAC997 Series

LL 1N4007
200 VRMS
ADJUST FOR MEASURE
ITM, 60 Hz VAC RS
I

TRIGGER CONTROL
CHARGE
TRIGGER CONTROL –
CHARGE 200 V
CS ADJUST FOR +
MT2 di/dt(c)
1N914 51 W
NON-POLAR MT1
CL G

Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.

Figure 11. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c

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488
 MAC997 Series

TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL

H2A H2A
H2B H2B

W2
H4 H5
T1
L1
H1
W1 W
L T

F1 T2
F2
P2 P2 D

P1
P

Figure 12. Device Positioning on Tape

Specification
Inches Millimeter
Symbol Item Min Max Min Max
D Tape Feedhole Diameter 0.1496 0.1653 3.8 4.2
D2 Component Lead Thickness Dimension 0.015 0.020 0.38 0.51
F1, F2 Component Lead Pitch 0.0945 0.110 2.4 2.8
H Bottom of Component to Seating Plane .059 .156 1.5 4.0
H1 Feedhole Location 0.3346 0.3741 8.5 9.5
H2A Deflection Left or Right 0 0.039 0 1.0
H2B Deflection Front or Rear 0 0.051 0 1.0
H4 Feedhole to Bottom of Component 0.7086 0.768 18 19.5
H5 Feedhole to Seating Plane 0.610 0.649 15.5 16.5
L Defective Unit Clipped Dimension 0.3346 0.433 8.5 11
L1 Lead Wire Enclosure 0.09842 — 2.5 —
P Feedhole Pitch 0.4921 0.5079 12.5 12.9
P1 Feedhole Center to Center Lead 0.2342 0.2658 5.95 6.75
P2 First Lead Spacing Dimension 0.1397 0.1556 3.55 3.95
T Adhesive Tape Thickness 0.06 0.08 0.15 0.20
T1 Overall Taped Package Thickness — 0.0567 — 1.44
T2 Carrier Strip Thickness 0.014 0.027 0.35 0.65
W Carrier Strip Width 0.6889 0.7481 17.5 19
W1 Adhesive Tape Width 0.2165 0.2841 5.5 6.3
W2 Adhesive Tape Position .0059 0.01968 .15 0.5
NOTES:
1. Maximum alignment deviation between leads not to be greater than 0.2 mm.
2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.
3. Component lead to tape adhesion must meet the pull test requirements.
4. Maximum non–cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.
5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.
6. No more than 1 consecutive missing component is permitted.
7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.
8. Splices will not interfere with the sprocket feed holes.

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489
 MAC997 Series

ORDERING & SHIPPING INFORMATION: MAC97 Series packaging options, Device Suffix
Europe
U.S. Equivalent Shipping Description of TO92 Tape Orientation
MAC997A6RL1, A8RL1 Radial Tape and Reel (2K/Reel) Flat side of TO92 and adhesive tape visible
MAC997B6RL1, B8RL1
MAC997A6,A8 Bulk in Box (5K/Box) N/A, Bulk
MAC997B6,B8
MAC997A6RLRP, Radial Tape and Fan Fold Box Round side of TO92 and adhesive tape
A8RLRP (2K/Box) visible
MAC997B6RLRP,
B8RLRP

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490
MCR08B, MCR08M
Preferred Device

Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for line powered consumer applications
such as relay and lamp drivers, small motor controls, gate drivers for http://onsemi.com
larger thyristors, and sensing and detection circuits. Supplied in
surface mount package for use in automated manufacturing. SCRs
• Sensitive Gate Trigger Current 0.8 AMPERES RMS
• Blocking Voltage to 600 Volts 200 thru 600 VOLTS
• Glass Passivated Surface for Reliability and Uniformity
• Surface Mount Package
• Device Marking: MCR08BT1: CR08B; MCR08MT1: CR08M, and G
Date Code A K

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit 4
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(Sine Wave, RGK = 1000 Ω, VRRM 1
2 3
TJ = 25 to 110°C)
MCR08BT1 200
MCR08MT1 600 SOT–223
On-State Current RMS IT(RMS) 0.8 Amps CASE 318E
(All Conduction Angles; TC = 80°C) STYLE 10

Peak Non-repetitive Surge Current ITSM 8.0 Amps

(1/2 Cycle Sine Wave, 60 Hz,
PIN ASSIGNMENT
TC = 25°C) 1 Cathode
Circuit Fusing Considerations I2t 0.4 A2s 2 Anode
(t = 8.3 ms) 3 Gate
Forward Peak Gate Power PGM 0.1 Watts 4 Anode
(TC = 80°C, t = 1.0 µs)
Average Gate Power PG(AV) 0.01 Watts
(TC = 80°C, t = 8.3 ms) ORDERING INFORMATION
Operating Junction Temperature Range TJ – 40 to °C Device Package Shipping
+110
MCR08BT1 SOT223 16mm Tape and Reel
Storage Temperature Range Tstg – 40 to °C
(1K/Reel)
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings MCR08MT1 SOT223 16mm Tape and Reel
apply for zero or negative gate voltage; however, positive gate voltage shall (1K/Reel)
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant source such that the voltage
Preferred devices are recommended choices for future use
ratings of the devices are exceeded.
and best overall value.

 Semiconductor Components Industries, LLC, 2000 491 Publication Order Number:

May, 2000 – Rev. 3 MCR08BT1/D
 MCR08B, MCR08M

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Ambient RθJA 156 °C/W
PCB Mounted per Figure 1
Thermal Resistance, Junction to Tab RθJT 25 °C/W
Measured on Anode Tab Adjacent to Epoxy
Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum) TL 260 °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current(2) IDRM, IRRM
(VAK = Rated VDRM or VRRM, RGK = 1000 Ω) TJ = 25°C — — 10 µA
TJ = 110°C — — 200 µA
ON CHARACTERISTICS
Peak Forward On-State Voltage(1) VTM — — 1.7 Volts
(IT = 1.0 A Peak)
Gate Trigger Current (Continuous dc)(3) IGT — — 200 µA
(VAK = 12 Vdc, RL = 100 Ω)
Holding Current(3) IH — — 5.0 mA
(VAK = 12 Vdc, Initiating Current = 20 mA)
Gate Trigger Voltage (Continuous dc)(3) VGT — — 0.8 Volts
(VAK = 12 Vdc, RL = 100 Ω)
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off State Voltage dv/dt 10 — — V/µs
(Vpk = Rated VDRM, TC = 110°C, RGK = 1000 Ω, Exponential Method)
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) RGK = 1000 Ω is included in measurement.
(3) RGK is not included in measurement.

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492
 MCR08B, MCR08M

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –

0.15
3.8
0.079
2.0

0.244
0.091 0.091
6.2
2.3 2.3
0.079
2.0
0.059 0.059 0.059 ǒinchesǓ BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR.
mm
0.984 1.5 1.5 1.5 BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL.
25.0 MATERIAL: G10 FIBERGLASS BASE EPOXY

0.096 0.096 0.096

2.44 2.44 2.44

0.059 0.059
1.5 1.5

0.472
12.0

Figure 1. PCB for Thermal Impedance and

Power Testing of SOT-223

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493
 MCR08B, MCR08M

IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) 10 160

150 TYPICAL L
140

THERMAL RESISTANCE, ( °C/W)

MAXIMUM

R θJA , JUNCTION TO AMBIENT

130
120 DEVICE MOUNTED ON L
1.0 FIGURE 1 AREA = L2 4
110 PCB WITH TAB AREA
100 AS SHOWN
90 1 2 3
80
0.1 70
TYPICAL AT TJ = 110°C 60
50 MINIMUM
MAX AT TJ = 110°C
40 FOOTPRINT = 0.076 cm2
MAX AT TJ = 25°C
0.01 30
0 1.0 2.0 3.0 4.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) FOIL AREA (cm2)

Figure 2. On-State Characteristics Figure 3. Junction to Ambient Thermal

Resistance versus Copper Tab Area

110 110
1.0 cm2 FOIL, 50 OR
100 100 60 Hz HALFWAVE
50 OR 60 Hz HALFWAVE α dc
AMBIENT TEMPERATURE ( °C)

AMBIENT TEMPERATURE ( °C)

α = CONDUCTION
T A , MAXIMUM ALLOWABLE

T A , MAXIMUM ALLOWABLE
90 90
ANGLE 180°
80 80
dc 120°
70 70
180°
60 60 α = 30°
120° 60°
50 50
α = 30°
40 40 90°
60° α
90°
30 30 α = CONDUCTION
ANGLE
20 20
0 0.1 0.2 0.3 0.4 0.5 0 0.1 0.2 0.3 0.4 0.5
IT(AV), AVERAGE ON-STATE CURRENT (AMPS) IT(AV), AVERAGE ON-STATE CURRENT (AMPS)

Figure 4. Current Derating, Minimum Pad Size Figure 5. Current Derating, 1.0 cm Square Pad
Reference: Ambient Temperature Reference: Ambient Temperature

110 110
PAD AREA = 4.0 cm2, 50 50 OR 60 Hz HALFWAVE
dc
OR 60 Hz HALFWAVE
100 dc
AMBIENT TEMPERATURE ( °C)

T(tab) , MAXIMUM ALLOWABLE

T A , MAXIMUM ALLOWABLE

180°
TAB TEMPERATURE ( ° C)

180°
90 120°
α = 30°
120°
80 α = 30°
60° 60°
70
90° 90°
60 α α
α = CONDUCTION α = CONDUCTION
ANGLE ANGLE
50 85
0 0.1 0.2 0.3 0.4 0.5 0 0.1 0.2 0.3 0.4 0.5
IT(AV), AVERAGE ON-STATE CURRENT (AMPS) IT(AV), AVERAGE ON-STATE CURRENT (AMPS)

Figure 6. Current Derating, 2.0 cm Square Pad Figure 7. Current Derating

Reference: Ambient Temperature Reference: Anode Tab

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 MCR08B, MCR08M

1.0 1.0

r T , TRANSIENT THERMAL RESISTANCE

0.9
α α = 30°
MAXIMUM AVERAGE POWER

0.8 α = CONDUCTION
P(AV),DISSIPATION (WATTS)

ANGLE 60°
0.7

NORMALIZED
0.6
90°
0.5 0.1
0.4
dc
0.3 180°
0.2 120°
0.1
0 0.01
0 0.1 0.2 0.3 0.4 0.5 0.0001 0.001 0.01 0.1 1.0 10 100
IT(AV), AVERAGE ON-STATE CURRENT (AMPS) t, TIME (SECONDS)

Figure 8. Power Dissipation Figure 9. Thermal Response Device

Mounted on Figure 1 Printed Circuit Board
VGT , GATE TRIGGER VOLTAGE (VOLTS)

0.7 2.0

VAK = 12 V VAK = 12 V
0.6 RL = 100 Ω RL = 3.0 kΩ
I H , HOLDING CURRENT
(NORMALIZED)
0.5 1.0

0.4

0.3 0
–40 –20 0 20 40 60 80 110 –40 –20 0 20 40 60 80 110
TJ, JUNCTION TEMPERATURE, (°C) TJ, JUNCTION TEMPERATURE, (°C)

Figure 10. Typical Gate Trigger Voltage Figure 11. Typical Normalized Holding Current
versus Junction Temperature versus Junction Temperature

0.7 1000
V GT , GATE TRIGGER VOLTAGE (VOLTS)

I GT , GATE TRIGGER CURRENT ( µA)

0.65
RGK = 1000 Ω, RESISTOR
0.6 CURRENT INCLUDED
100
0.55

0.5 VAK = 12 V
RL = 100 Ω
0.45 VAK = 12 V WITHOUT GATE RESISTOR
RL = 100 Ω 10
0.4 TJ = 25°C

0.35

0.3 1.0
0.1 1.0 10 100 1000 –40 –20 0 20 40 60 80 110
IGT, GATE TRIGGER CURRENT (µA) TJ, JUNCTION TEMPERATURE (°C)

Figure 12. Typical Range of VGT Figure 13. Typical Gate Trigger Current
versus Measured IGT versus Junction Temperature

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100 10000
5000
TJ = 25°C Vpk = 400 V
IH , HOLDING CURRENT (mA)

1000
500
10 IGT = 48 µA

STATIC dv/dt (V/ µS)

100 TJ = 25°
50
IGT = 7 µA 10
1.0 125° 50°
5.0
1.0 110°
75°
0.5
0.1 0.1
1.0 10 100 1000 10,000 100,000 10 100 1000 10,000 100,000
RGK, GATE-CATHODE RESISTANCE (OHMS) RGK, GATE-CATHODE RESISTANCE (OHMS)

Figure 14. Holding Current Range versus Figure 15. Exponential Static dv/dt versus Junction
Gate-Cathode Resistance Temperature and Gate-Cathode Termination Resistance

10000 10000
300 V
TJ = 110°C TJ = 110°C
1000 1000 400 V (PEAK)
200 V
100 V
500 500
400 V
STATIC dv/dt (V/ µS)

STATIC dv/dt (V/ µS)

100 50 V 100 RGK = 100

50 50
500 V
10 10 RGK = 1.0 k

5.0 5.0
RGK = 10 k
1.0 1.0
10 100 1000 10,000 0.01 0.1 1.0 10 100
RGK, GATE-CATHODE RESISTANCE (OHMS) CGK, GATE-CATHODE CAPACITANCE (nF)

Figure 16. Exponential Static dv/dt versus Peak Figure 17. Exponential Static dv/dt versus
Voltage and Gate-Cathode Termination Resistance Gate-Cathode Capacitance and Resistance

10000

1000

500
STATIC dv/dt (V/ µS)

100

50
IGT = 70 µA
10 IGT = 5 µA
IGT = 35 µA
5.0
IGT = 15 µA
1.0
10 100 1000 10,000 100,000
GATE-CATHODE RESISTANCE (OHMS)

Figure 18. Exponential Static dv/dt versus

Gate-Cathode Termination Resistance and
Product Trigger Current Sensitivity

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 MCR08B, MCR08M

INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the interface between the board and the package. With the
total design. The footprint for the semiconductor packages correct pad geometry, the packages will self align when
must be the correct size to insure proper solder connection subjected to a solder reflow process.

0.15
3.8

0.079
2.0

0.248
6.3
0.091 0.091
2.3 2.3

0.079
2.0

0.059 0.059 0.059 inches

1.5 1.5 1.5 mm

SOT-223

SOT-223 POWER DISSIPATION

The power dissipation of the SOT-223 is a function of the
anode pad size. This can vary from the minimum pad size
for soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from
the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet for the SOT-223 package, PD can be calculated as
follows:
TJ(max) – TA
PD =
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 550 milliwatts.
PD = 110°C – 25°C = 550 milliwatts
156°C/W
The 156°C/W for the SOT-223 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 550
milliwatts. There are other alternatives to achieving higher
power dissipation from the SOT-223 package. One is to
increase the area of the anode pad. By increasing the area of
the anode pad, the power dissipation can be increased.
Although one can almost double the power dissipation with
this method, one will be giving up area on the printed
circuit board which can defeat the purpose of using surface
mount technology. A graph of RθJA versus anode pad area
is shown in Figure 3.
Another alternative would be to use a ceramic substrate
or an aluminum core board such as Thermal Clad. Using
a board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.

SOLDER STENCIL GUIDELINES

Prior to placing surface mount components onto a printed or stainless steel with a typical thickness of 0.008 inches.
circuit board, solder paste must be applied to the pads. A The stencil opening size for the SOT-223 package should
solder stencil is required to screen the optimum amount of be the same as the pad size on the printed circuit board, i.e.,
solder paste onto the footprint. The stencil is made of brass a 1:1 registration.

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 MCR08B, MCR08M

SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.

TYPICAL SOLDER HEATING PROFILE

For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones,
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 19 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems but it is a good starting point. Factors that
can affect the profile include the type of soldering system in
use, density and types of components on the board, type of
solder used, and the type of board or substrate material
being used. This profile shows temperature versus time.
The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177–189°C. When this type of furnace is used for solder
reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.

STEP 1 STEP 2 STEP 3 STEP 4 STEP 5 STEP 6 STEP 7

PREHEAT VENT HEATING HEATING HEATING VENT COOLING
ZONE 1 “SOAK” ZONES 2 & 5 ZONES 3 & 6 ZONES 4 & 7
“SPIKE” 205° TO
“RAMP” “RAMP” “SOAK”
219°C
200°C DESIRED CURVE FOR HIGH 170°C PEAK AT
MASS ASSEMBLIES SOLDER
160°C
150°C JOINT

150°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
100°C 140°C (DEPENDING ON
MASS OF ASSEMBLY)
100°C

DESIRED CURVE FOR LOW

MASS ASSEMBLIES
50°C

TIME (3 TO 7 MINUTES TOTAL) TMAX

Figure 19. Typical Solder Heating Profile

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MCR8DCM, MCR8DCN
Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
http://onsemi.com
• Small Size
• Passivated Die for Reliability and Uniformity
SCRs
• Low Level Triggering and Holding Characteristics
8 AMPERES RMS
• Available in Surface Mount Lead Form — Case 369A
• Device Marking: Device Type, e.g., MCR8DCM, Date Code 600 thru 800 VOLTS

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) G

Rating Symbol Value Unit A K
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to 125°C, Sine Wave, VRRM
50 to 60 Hz, Gate Open)
MCR8DCM 600
4
MCR8DCN 800
On–State RMS Current IT(RMS) 8.0 Amps 1 2
(180° Conduction Angles; TC = 105°C) 3
Average On–State Current IT(AV) 5.1 Amps
(180° Conduction Angles; TC = 105°C) D–PAK
Peak Non-Repetitive Surge Current ITSM 80 Amps CASE 369A
(1/2 Cycle, Sine Wave 60 Hz, STYLE 4
TJ = 125°C)
PIN ASSIGNMENT
Circuit Fusing Consideration I2t 26 A2sec
(t = 8.3 msec) 1 Cathode

Forward Peak Gate Power PGM 5.0 Watts 2 Anode

(Pulse Width ≤ 1.0 msec, TC = 105°C) 3 Gate
Forward Average Gate Power PG(AV) 0.5 Watts 4 Anode
(t = 8.3 msec, TC = 105°C)
Forward Peak Gate Current IGM 2.0 Amps
(Pulse Width ≤ 1.0 msec, TC = 105°C) ORDERING INFORMATION

Operating Junction Temperature Range TJ – 40 to 125 °C Device Package Shipping

Storage Temperature Range Tstg – 40 to 150 °C MCR8DCMT4 DPAK 369A 16mm Tape
(1) VDRM, VRRM for all types can be applied on a continuous basis. Ratings apply and Reel
for zero or negative gate voltage; positive gate voltage shall not be applied (2.5K/Reel)
concurrent with negative potential on the anode. Blocking voltages shall not
be tested with a constant current source such that the voltage ratings of the MCR8DCNT4 DPAK 369A 16mm Tape
device are exceeded. and Reel
(2.5K/Reel)

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 2000 499 Publication Order Number:

May, 2000 – Rev. 2 MCR8DCM/D
 MCR8DCM, MCR8DCN

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance — Junction to Case RqJC 2.2 °C/W
Thermal Resistance — Junction to Ambient RqJA 88
Thermal Resistance — Junction to Ambient(1) RqJA 80
Maximum Lead Temperature for Soldering Purposes(2) TL 260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Peak Repetitive Reverse Blocking Current IDRM, mA
(VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C IRRM — — 0.01
TJ = 125°C — — 5.0
ON CHARACTERISTICS
Peak On–State Voltage(3) VTM Volts
(ITM = 16 A) — 1.4 1.8
Gate Trigger Current (Continuous dc) IGT mA
W
(VAK = 12 V, RL = 100 , TJ = 25°C) 2.0 7.0 15
(TJ = –40°C) — — 30
Gate Trigger Voltage (Continuous dc) VGT Volts
W
(VAK = 12 V, RL = 100 , TJ = 25°C) 0.5 0.65 1.0
(TJ = –40°C) — — 2.0
(TJ = 125°C) 0.2 — —
Holding Current IH mA
(VAK = 12 V, Initiating Current = 200 mA, Gate Open) TJ = 25°C 4.0 22 30
TJ = –40°C — — 60
Latching Current IL mA
(VAK = 12 V, IG = 15 mA, TJ = 25°C) 4.0 22 30
(VAK = 12 V, IG = 30 mA, TJ = –40°C) — — 60

DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage dv/dt m
V/ s
(VAK = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) 50 200 —
(1) Surface mounted on minimum recommended pad size.
(2) 1/8″ from case for 10 seconds.
(3) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

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 MCR8DCM, MCR8DCN

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –

125 10

P(AV) , AVERAGE POWER DISSIPATION (WATTS)

TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C)

180°
120 8.0 120°
a a 90°
a = Conduction a = Conduction dc
115 6.0
Angle Angle 60°

110 4.0
dc a = 30°

105 2.0
a = 30° 60° 90° 120° 180°
100 0
0 1.0 2.0 3.0 4.0 5.0 6.0 0 1.0 2.0 3.0 4.0 5.0 6.0
IT(AV), AVERAGE ON–STATE CURRENT (AMPS) IT(AV), AVERAGE ON–STATE CURRENT (AMPS)

Figure 1. Average Current Derating Figure 2. On–State Power Dissipation

I T, INSTANTANEOUS ON–STATE CURRENT (AMPS)

100 1.0
TYPICAL @ TJ = 25°C
MAXIMUM @ TJ = 125°C
r(t) , TRANSIENT RESISTANCE

10
(NORMALIZED)

0.1
MAXIMUM @ TJ = 25°C ZqJC(t) = RqJC(t)Sr(t)
1.0

0.1 0.01
0 1.0 2.0 3.0 4.0 5.0 0.1 1.0 10 100 1000 10 K
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) t, TIME (ms)

Figure 3. On–State Characteristics Figure 4. Transient Thermal Response

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100 0.9

VGT, GATE TRIGGER VOLTAGE (VOLTS)

I GT, GATE TRIGGER CURRENT (mA)
0.8

0.7

0.6
10
0.5

0.4

0.3

1.0 0.2
–40 –25 –10 5.0 20 35 50 65 80 95 110 125 –40 –25 –10 5.0 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 5. Typical Gate Trigger Current versus Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature Junction Temperature

100 100
IH , HOLDING CURRENT (mA)

IL, LATCHING CURRENT (mA)

10 10

1.0 1.0
–40 –25 –10 5.0 20 35 50 65 80 95 110 125 –40 –25 –10 5.0 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Typical Holding Current versus Figure 8. Typical Latching Current versus
Junction Temperature Junction Temperature

1000
VD = 800 V
TJ = 125°C
STATIC dv/dt (V/ ms)

100
10 100 1000 10 K
RGK, GATE–CATHODE RESISTANCE (OHMS)

Figure 9. Exponential Static dv/dt versus

Gate–Cathode Resistance

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 MCR8DCM, MCR8DCN

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the interface between the board and the package. With the
total design. The footprint for the semiconductor packages correct pad geometry, the packages will self align when
must be the correct size to insure proper solder connection subjected to a solder reflow process.

0.165 0.118
4.191 3.0
0.100
2.54
0.063
1.6
0.190 0.243
4.826 6.172

inches
mm
DPAK

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503
MCR8DSM, MCR8DSN
Preferred Device

Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light http://onsemi.com
and speed control.
• Small Size SCRs
• Passivated Die for Reliability and Uniformity 8 AMPERES RMS
• Low Level Triggering and Holding Characteristics 600 thru 800 VOLTS
• Available in Two Package Styles
Surface Mount Lead Form — Case 369A
Miniature Plastic Package — Straight Leads — Case 369
• Device Marking: Device Type, e.g., for MCR8DSM: CR8DSM, G
A K
Date Code

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit 4
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to 110°C, Sine Wave, VRRM 1 2
50 to 60 Hz, Gate Open) 3
MCR8DSM 600
MCR8DSN 800
D–PAK
On–State RMS Current IT(RMS) 8.0 Amps CASE 369A
(180° Conduction Angles; TC = 90°C) STYLE 4
Average On–State Current IT(AV) 5.1 Amps
(180° Conduction Angles; TC = 90°C) PIN ASSIGNMENT
Peak Non-Repetitive Surge Current ITSM 90 Amps 1 Cathode
(1/2 Cycle, Sine Wave, 60 Hz, 2 Anode
TJ = 110°C)
3 Gate
Circuit Fusing Consideration I2t 34 A2sec Anode
4
(t = 8.3 msec)
Forward Peak Gate Power PGM 5.0 Watts
(Pulse Width ≤ 10 msec, TC = 90°C) ORDERING INFORMATION
Forward Average Gate Power PG(AV) 0.5 Watt Device Package Shipping
(t = 8.3 msec, TC = 90°C)
MCR8DSMT4 DPAK 369A 16mm Tape
Forward Peak Gate Current IGM 2.0 Amps
and Reel
(Pulse Width ≤ 10 msec, TC = 90°C)
(2.5K/Reel)
Operating Junction Temperature Range TJ – 40 to 110 °C
MCR8DSNT4 DPAK 369A 16mm Tape
Storage Temperature Range Tstg – 40 to 150 °C and Reel
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings (2.5K/Reel)
apply for negative gate voltage; positive gate voltage shall not be applied
concurrent with negative potential on the anode. Blocking voltages shall not
Preferred devices are recommended choices for future use
be tested with a constant current source such that the voltage ratings of the
and best overall value.
device are exceeded.

 Semiconductor Components Industries, LLC, 2000 504 Publication Order Number:

May, 2000 – Rev. 2 MCR8DSM/D
 MCR8DSM, MCR8DSN

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance — Junction to Case RqJC 2.2 °C/W
Thermal Resistance — Junction to Ambient RqJA 88
Thermal Resistance — Junction to Ambient(1) RqJA 80
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current IDRM mA
(VAK = Rated VDRM or VRRM; RGK = 1.0 K )(2) W TJ = 25°C IRRM — — 10
TJ = 110°C — — 500
ON CHARACTERISTICS
Peak Reverse Gate Blocking Voltage VGRM Volts
m
(IGR = 10 A) 10 12.5 18
Peak Reverse Gate Blocking Current IRGM mA
(VGR = 10 V) — — 1.2
Peak Forward On–State Voltage(3) VTM Volts
(ITM = 16 A) — 1.4 1.8
Gate Trigger Current (Continuous dc)(4) IGT mA
(VD = 12 V, RL = 100 ) W TJ = 25°C 5.0 12 200
TJ = –40°C — — 300
Gate Trigger Voltage (Continuous dc)(4) VGT Volts
(VD = 12 V, RL = 100 ) W TJ = 25°C 0.45 0.65 1.0
TJ = –40°C — — 1.5
TJ = 110°C 0.2 — —
Holding Current IH mA
(VD = 12 V, Initiating Current = 200 mA, Gate Open) TJ = 25°C 0.5 1.0 6.0
TJ = –40°C — — 10
Latching Current IL mA
(VD = 12 V, IG = 2.0 mA) TJ = 25°C 0.5 1.0 6.0
TJ = –40°C — — 10
Total Turn–On Time tgt ms
W
(Source Voltage = 12 V, RS = 6.0 K , IT = 16 A(pk), RGK = 1.0 K ) W — 2.0 5.0
(VD = Rated VDRM, Rise Time = 20 ns, Pulse Width = 10 s) m
DYNAMIC CHARACTERISTICS
Characteristics Symbol Min Typ Max Unit
Critical Rate of Rise of Off–State Voltage dv/dt m
V/ s
(VD = 0.67 X Rated VDRM, Exponential Waveform, 2.0 10 —
W
RGK = 1.0 K , TJ = 110°C)
(1) Surface mounted on minimum recommended pad size.
W
(2) Ratings apply for negative gate voltage or RGK = 1.0 K . Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
(3) Pulse Test; Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.
(4) RGK current not included in measurements.

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505
 MCR8DSM, MCR8DSN

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –

110 12

P(AV) , AVERAGE POWER DISSIPATION (WATTS)

TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (°C)

10
105
a a 180°
a = Conduction 8.0
a = Conduction 90°
120°
100
Angle Angle dc
6.0 60°
a = 30°
95
dc 4.0

90
2.0
a = 30° 60° 90° 120° 180°
85 0
0 1.0 2.0 3.0 4.0 5.0 6.0 0 1.0 2.0 3.0 4.0 5.0 6.0
IT(AV), AVERAGE ON–STATE CURRENT (AMPS) IT(AV), AVERAGE ON–STATE CURRENT (AMPS)

Figure 1. Average Current Derating Figure 2. On–State Power Dissipation

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506
 MCR8DSM, MCR8DSN

100 1.0
I T, INSTANTANEOUS ON–STATE CURRENT (AMPS) TYPICAL @ TJ = 25°C

r(t) , TRANSIENT THERMAL RESISTANCE

MAXIMUM @ TJ = 110°C

10

(NORMALIZED)
0.1
MAXIMUM @ TJ = 25°C ZqJC(t) = RqJC(t)Sr(t)
1.0

0.1 0.01
0 1.0 2.0 3.0 4.0 5.0 0.1 1.0 10 100 1000 10 K
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) t, TIME (ms)

Figure 3. On–State Characteristics Figure 4. Transient Thermal Response

1000 1.0

VGT, GATE TRIGGER VOLTAGE (VOLTS)

I GT, GATE TRIGGER CURRENT ( A)

W
m

RGK = 1.0 K
100

GATE OPEN
10

1.0 0.1
–40 –25 –10 5.0 20 35 50 65 80 95 110 –40 –25 –10 5.0 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 5. Typical Gate Trigger Current versus Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature Junction Temperature

10 10
RGK = 1.0 K W RGK = 1.0 K W
IH , HOLDING CURRENT (mA)

IL, LATCHING CURRENT (mA)

1.0 1.0

0.1 0.1
–40 –25 –10 5.0 20 35 50 65 80 95 110 –40 –25 –10 5.0 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Typical Holding Current versus Figure 8. Typical Latching Current versus
Junction Temperature Junction Temperature

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507
 MCR8DSM, MCR8DSN

10 1000
TJ = 25°C

8.0
IH, HOLDING CURRENT (mA)

70°C

STATIC dv/dt (V/m s)

100
6.0
90°C
IGT = 25 mA
4.0 TJ = 110°C
10

2.0 IGT = 10 mA

0 1.0
100 1000 10 K 100 1000
RGK, GATE–CATHODE RESISTANCE (OHMS) RGK, GATE–CATHODE RESISTANCE (OHMS)

Figure 9. Holding Current versus Figure 10. Exponential Static dv/dt versus
Gate–Cathode Resistance Gate–Cathode Resistance and Junction
Temperature

1000 1000
TJ = 110°C VD = 800 V
400 V TJ = 110°C
STATIC dv/dt (V/ ms)

STATIC dv/dt (V/ ms)

100 100
600 V IGT = 25 mA

VPK = 800 V
IGT = 10 mA
10 10

1.0 1.0
100 1000 100 1000
RGK, GATE–CATHODE RESISTANCE (OHMS) RGK, GATE–CATHODE RESISTANCE (OHMS)

Figure 11. Exponential Static dv/dt versus Figure 12. Exponential Static dv/dt versus
Gate–Cathode Resistance and Peak Voltage Gate–Cathode Resistance and Gate Trigger
Current Sensitivity

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508
 MCR8DSM, MCR8DSN

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the interface between the board and the package. With the
total design. The footprint for the semiconductor packages correct pad geometry, the packages will self align when
must be the correct size to insure proper solder connection subjected to a solder reflow process.

0.165 0.118
4.191 3.0
0.100
2.54
0.063
1.6
0.190 0.243
4.826 6.172

inches
mm
DPAK

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509
MCR8M, MCR8N
Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half–wave, silicon gate–controlled devices are needed.
http://onsemi.com
• Blocking Voltage of 600 thru 800 Volts
• On–State Current Rating of 8 Amperes RMS at 80°C SCRs
• High Surge Current Capability — 80 Amperes
8 AMPERES RMS
• Rugged, Economical TO220AB Package
600 thru 800 VOLTS
• Glass Passivated Junctions for Reliability and Uniformity
• Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design G

• High Immunity to dv/dt — 100 V/µsec Minimum at 125°C A K

• Device Marking: Logo, Device Type, e.g., MCR8N, Date Code

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

4
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to 125°C, Sine Wave, VRRM
50 to 60 Hz, Gate Open) MCR8M 600
MCR8N 800

On-State RMS Current IT(RMS) 8.0 Amps 1

2
(180° Conduction Angles; TC = 80°C) 3
Peak Non-Repetitive Surge Current ITSM 80 Amps TO–220AB
(One Full Cycle, 60 Hz, TC = 125°C) CASE 221A
Circuit Fusing Consideration I2t 26.5 A2sec STYLE 3
(t = 8.33 ms)
Forward Peak Gate Power PGM 5.0 Watts
PIN ASSIGNMENT
(Pulse Width ≤ 1.0 µs, TC = 80°C) 1 Cathode

Forward Average Gate Power PG(AV) 0.5 Watt 2 Anode

(t = 8.3 ms, TC = 80°C) 3 Gate
Forward Peak Gate Current IGM 2.0 Amps 4 Anode
(Pulse Width ≤ 1.0 µs, TC = 80°C)
Operating Junction Temperature Range TJ – 40 to 125 °C
ORDERING INFORMATION
Storage Temperature Range Tstg – 40 to 150 °C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings Device Package Shipping
apply for zero or negative gate voltage; positive gate voltage shall not be
MCR8M TO220AB 50 Units/Rail
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage MCR8N TO220AB 50 Units/Rail
ratings of the devices are exceeded.

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 1999 510 Publication Order Number:

March, 2000 – Rev. 3 MCR8/D
 MCR8M, MCR8N

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance — Junction to Case RθJC 2.2 °C/W
— Junction to Ambient RθJA 62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current IDRM, mA
(VD = Rated VDRM and VRRM; Gate Open) TJ = 25°C IRRM — — 0.01
TJ = 125°C — — 2.0
ON CHARACTERISTICS
Peak Forward On–State Voltage* (ITM = 16 A) VTM — — 1.8 Volts
Gate Trigger Current (Continuous dc) IGT 2.0 7.0 15 mA
(VD = 12 V; RL = 100 Ω)
Holding Current IH 4.0 17 30 mA
(VD = 12 V, Gate Open, Initiating Current = 200 mA)
Latch Current IL 6.0 20 40 mA
(VD = 12 V, IG = 15 mA)
Gate Trigger Voltage (Continuous dc) VGT 0.5 0.65 1.0 Volts
(VD = 12 V; 100 Ω) TJ = 25°C
Gate Non–Trigger Voltage VGD 0.2 — — Volts
(VD = 12 V; RL = 100 Ω) TJ = 125°C
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage dv/dt 100 250 — V/µs
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
Critical Rate of Rise of On–State Current di/dt — — 50 A/µs
IPK = 50 A, Pw = 40 µsec, diG/dt = 1 A/µsec, Igt = 50 mA
*Indicates Pulse Test: Pulse Width v 2.0 ms, Duty Cycle v 2%.

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511
 MCR8M, MCR8N

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –

P(AV), AVERAGE POWER DISSIPATION (WATTS)

125 20
18
TC, CASE TEMPERATURE (°C)

120
16 180°
90° dc
115 14
60°
110 12
30°
10
105
8
dc
100 6
4
95
30° 60° 90° 180° 2
90 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8
IT(RMS), RMS ON–STATE CURRENT (AMPS) IT(AV), AVERAGE ON–STATE CURRENT (AMPS)

Figure 1. Typical RMS Current Derating Figure 2. On–State Power Dissipation

IT, INSTANTANEOUS ON–STATE CURRENT (AMPS)

100 20
MAXIMUM @ TJ = 25°C
18
GATE TRIGGER CURRENT (mA)

MAXIMUM @ TJ = 125°C 16

10 14
12
10
8
1
6
4
2
0.1 0
0.5 1.0 1.5 2.0 2.5 3.0 –40 –25 –10 5 20 35 50 65 80 95 110 125
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical On–State Characteristics Figure 4. Typical Gate Trigger Current versus
Junction Temperature

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512
 MCR8M, MCR8N

VGT, GATE TRIGGER VOLTAGE (VOLTS)

100 1.0
IH, HOLDING CURRENT (mA)
0.9

0.8

0.7

10 0.6

0.5

0.4

0.3
1 0.2
–40 –25 –10 5 20 35 50 65 80 95 110 125 –40 –25 –10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 5. Typical Holding Current versus Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature Junction Temperature

100
IL, LATCHING CURRENT (mA)

10

1
–40 –25 –10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Typical Latching Current versus

Junction Temperature

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513
MCR8SD, MCR8SM,
MCR8SN
Preferred Device

Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
http://onsemi.com
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever SCRs
half–wave, silicon gate–controlled devices are needed.
• Sensitive Gate Allows Triggering by Microcontrollers and other 8 AMPERES RMS
Logic Circuits 400 thru 800 VOLTS
• Blocking Voltage to 800 Volts
• On–State Current Rating of 8 Amperes RMS at 80°C G
• High Surge Current Capability — 80 Amperes A K

• Rugged, Economical TO220AB Package

• Glass Passivated Junctions for Reliability and Uniformity
• Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design 4
• Immunity to dv/dt — 5 V/µsec Minimum at 110°C
• Device Marking: Logo, Device Type, e.g., MCRSD, Date Code

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

1
Rating Symbol Value Unit 2
3
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to 110°C, Sine Wave, VRRM TO–220AB
50 to 60 Hz, Gate Open) CASE 221A
MCR8SD 400 STYLE 3
MCR8SM 600
MCR8SN 800 PIN ASSIGNMENT
On-State RMS Current IT(RMS) 8.0 Amps 1 Cathode
(180° Conduction Angles; TC = 80°C)
2 Anode
Peak Non-Repetitive Surge Current ITSM 80 Amps
3 Gate
(1/2 Cycle, Sine Wave, 60 Hz,
TJ = 110°C) 4 Anode

Circuit Fusing Consideration I2t 26.5 A2sec

(t = 8.33 ms)
ORDERING INFORMATION
Forward Peak Gate Power PGM 5.0 Watts
(Pulse Width ≤ 1.0 µs, TC = 80°C) Device Package Shipping

Forward Average Gate Power PG(AV) 0.5 Watt MCR8SD TO220AB 50 Units/Rail
(t = 8.3 ms, TC = 80°C)
MCR8SM TO220AB 50 Units/Rail
Forward Peak Gate Current IGM 2.0 Amps
(Pulse Width ≤ 1.0 µs, TC = 80°C) MCR8SN TO220AB 50 Units/Rail

Operating Junction Temperature Range TJ – 40 to 110 °C

Preferred devices are recommended choices for future use
Storage Temperature Range Tstg – 40 to 150 °C
and best overall value.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.

 Semiconductor Components Industries, LLC, 1999 514 Publication Order Number:

March, 2000 – Rev. 1 MCR8S/D
 MCR8SD, MCR8SM, MCR8SN

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance — Junction to Case RθJC 2.2 °C/W
— Junction to Ambient RθJA 62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current(1) IDRM, µA
(VD = Rated VDRM and VRRM; RGK = 1 kΩ) TJ = 25°C IRRM — — 10
TJ = 110°C — — 500
ON CHARACTERISTICS
Peak Forward On–State Voltage* (ITM = 16 A) VTM — — 1.8 Volts
Gate Trigger Current (Continuous dc)(2) IGT 5.0 25 200 µA
(VD = 12 V; RL = 100 Ω)
Holding Current(2) IH — 0.5 6.0 mA
(VD = 12 V, Gate Open, Initiating Current = 200 mA)
Latch Current(2) IL — 0.6 8.0 mA
(VD = 12 V, IG = 200 µA)
Gate Trigger Voltage (Continuous dc)(2) TJ = 25°C VGT 0.3 0.65 1.0 Volts
(VD = 12 V; RL = 100 Ω) *
TJ = 40°C — — 1.5
Gate Non–Trigger Voltage TJ = 110°C VGD 0.2 — — Volts
(VD = 12 V, RL = 100 Ω)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage dv/dt 5.0 15 — V/µs
(VD = 67% VDRM, RGK = 1 KΩ, CGK = 0.1 µF, TJ = 110°C)
Critical Rate of Rise of On–State Current di/dt — — 100 A/µs
IPK = 50 A, Pw = 40 µsec, diG/dt = 1 A/µsec, Igt = 10 mA
*Indicates Pulse Test: Pulse Width v 2.0 ms, Duty Cycle v 2%.
(1) RGK = 1000 Ohms included in measurement.
(2) Does not include RGK in measurement.

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515
 MCR8SD, MCR8SM, MCR8SN

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –

P(AV), AVERAGE POWER DISSIPATION (WATTS)

110 15
TC, CASE TEMPERATURE (°C)

105 dc
12
100

9
95 180°
90° 120°
90 60°
6

85 30°
dc
3
80
30° 60° 90° 120° 180°
75 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8
IT(RMS), RMS ON–STATE CURRENT (AMPS) IT(AV), AVERAGE ON–STATE CURRENT (AMPS)

Figure 1. Typical RMS Current Derating Figure 2. On–State Power Dissipation

IT, INSTANTANEOUS ON–STATE CURRENT (AMPS)

100 100
TYPICAL @ TJ = 25°C
GATE TRIGGER CURRENT ( m A)

90

MAXIMUM @ TJ = 110°C 80

10 70
MAXIMUM @ TJ = 25°C 60
50
40
1
30
20
10
0.1 0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 –40 –25 –10 5 20 35 50 65 80 95 110
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical On–State Characteristics Figure 4. Typical Gate Trigger Current versus
Junction Temperature

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516
 MCR8SD, MCR8SM, MCR8SN

VGT, GATE TRIGGER VOLTAGE (VOLTS)

1000 1.0

0.9
IH, HOLDING CURRENT ( m A)

0.8
100
0.7

0.6

0.5
10
0.4

0.3
1 0.2
–40 –25 –10 5 20 35 50 65 80 95 110 –40 –25 –10 5 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 5. Typical Holding Current versus Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature Junction Temperature

1000
IL, LATCHING CURRENT ( m A)

100

10

1
–40 –25 –10 5 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Typical Latching Current versus

Junction Temperature

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517
MCR12D, MCR12M, MCR12N
Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half–wave silicon gate–controlled devices are needed.
http://onsemi.com
• Blocking Voltage to 800 Volts
• On–State Current Rating of 12 Amperes RMS at 80°C SCRs
• High Surge Current Capability — 100 Amperes
12 AMPERES RMS
• Rugged, Economical TO220AB Package
400 thru 800 VOLTS
• Glass Passivated Junctions for Reliability and Uniformity
• Minimum and Maximum Values of IGT, VGT an IH Specified for
Ease of Design G

• High Immunity to dv/dt — 100 V/µsec Minimum at 125°C A K

• Device Marking: Logo, Device Type, e.g., MCR12D, Date Code

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

4
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to 125°C, Sine Wave, VRRM
50 to 60 Hz, Gate Open)
MCR12D 400
MCR12M 600
1
MCR12N 800 2
3
On-State RMS Current IT(RMS) 12 A
(180° Conduction Angles; TC = 80°C) TO–220AB
CASE 221A
Peak Non-repetitive Surge Current ITSM 100 A STYLE 3
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125°C)
PIN ASSIGNMENT
Circuit Fusing Consideration I2t 41 A2sec
1 Cathode
(t = 8.33 ms)
2 Anode
Forward Peak Gate Power PGM 5.0 Watts
(Pulse Width ≤ 1.0 µs, TC = 80°C) 3 Gate

Forward Average Gate Power PG(AV) 0.5 Watts 4 Anode

(t = 8.3 ms, TC = 80°C)
Forward Peak Gate Current IGM 2.0 A
ORDERING INFORMATION
(Pulse Width ≤ 1.0 µs, TC = 80°C)
Operating Junction Temperature Range TJ – 40 to °C Device Package Shipping
+125
MCR12D TO220AB 50 Units/Rail
Storage Temperature Range Tstg – 40 to °C
MCR12M TO220AB 50 Units/Rail
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings MCR12N TO220AB 50 Units/Rail
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
Preferred devices are recommended choices for future use
shall not be tested with a constant current source such that the voltage
and best overall value.
ratings of the devices are exceeded.

 Semiconductor Components Industries, LLC, 1999 518 Publication Order Number:

December, 1999 – Rev. 2 MCR12/D
 MCR12D, MCR12M, MCR12N

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance — Junction to Case RθJC 2.2 °C/W
— Junction to Ambient RθJA 62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current IDRM, mA
(VD = Rated VDRM and VRRM; Gate Open) TJ = 25°C IRRM — — 0.01
TJ = 125°C — — 2.0
ON CHARACTERISTICS
Peak Forward On–State Voltage* (ITM = 24 A) VTM — — 2.2 Volts
Gate Trigger Current (Continuous dc) (VD = 12 V; RL = 100 Ω) IGT 2.0 8.0 20 mA
Holding Current (VD = 12 V, Gate Open, Initiating Current = 200 mA) IH 4.0 20 40 mA
Latch Current (VD = 12 V, IG = 20 mA) IL 6.0 25 60 mA
Gate Trigger Voltage (Continuous dc) (VD = 12 V; RL =100 Ω) VGT 0.5 0.65 1.0 Volts
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage dv/dt 100 250 — V/µs
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
Repetitive Critical Rate of Rise of On–State Current di/dt — — 50 A/µs
IPK = 50 A, Pw = 40 µsec, diG/dt = 1 A/µsec, Igt = 50 mA
*Indicates Pulse Test: Pulse Width v 2.0 ms, Duty Cycle v 2%.

http://onsemi.com
519
 MCR12D, MCR12M, MCR12N

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –

125 20

P(AV) , AVERAGE POWER DISSIPATION (WATTS)

18
120 dc
180°
TC , CASE TEMPERATURE (° C)

16
115 14
90°
110 12
10 30°
105
8
dc
100 6
4
95
30° 60° 90° 180° 2
90 0
0 1 2 3 4 5 6 7 8 9 10 11 12 0 1 2 3 4 5 6 7 8 9 10 11 12
IT(RMS), RMS ON–STATE CURRENT (AMPS) IT(AV), AVERAGE ON–STATE CURRENT (AMPS)

Figure 1. Typical RMS Current Derating Figure 2. On–State Power Dissipation

I T, INSTANTANEOUS ON–STATE CURRENT (AMPS)

100 20
MAXIMUM @ TJ = 25°C
18
GATE TRIGGER CURRENT (mA)

MAXIMUM @ TJ = 125°C 16

10 14
12
10
8
1
6
4
2
0.1 0
0.5 1.0 1.5 2.0 2.5 3.0 –40 –25 –10 5 20 35 50 65 80 95 110 125
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical On–State Characteristics Figure 4. Typical Gate Trigger Current versus
Junction Temperature

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520
 MCR12D, MCR12M, MCR12N

100 1.0

VGT, GATE TRIGGER VOLTAGE (VOLTS)

0.9
IH, HOLDING CURRENT (mA)

0.8

0.7

10 0.6

0.5

0.4

0.3
1 0.2
–40 –25 –10 5 20 35 50 65 80 95 110 125 –40 –25 –10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 5. Typical Holding Current versus Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature Junction Temperature

100
IL , LATCHING CURRENT (mA)

10

1
–40 –25 –10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Typical Latching Current versus

Junction Temperature

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521
MCR12DCM, MCR12DCN
Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
http://onsemi.com
• Small Size
• Passivated Die for Reliability and Uniformity
SCRs
• Low Level Triggering and Holding Characteristics
12 AMPERES RMS
• Device Marking: Device Type, e.g., for MCR12DCM: R12DCM,
Date Code 600 thru 800 VOLTS

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

G
Rating Symbol Value Unit A K
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to 125°C, Sine Wave, VRRM
50 to 60 Hz, Gate Open)
MCR12DCM 600
MCR12DCN 800 4

On–State RMS Current IT(RMS) 12 Amps 1 2

(180° Conduction Angles; TC = 90°C) 3
Average On–State Current IT(AV) 7.6 Amps
(180° Conduction Angles; TC = 90°C)
D–PAK
Peak Non-Repetitive Surge Current ITSM 100 Amps CASE 369A
(1/2 Cycle, Sine Wave 60 Hz, STYLE 4
TJ = 125°C)
Circuit Fusing Consideration I2t 41 A2sec PIN ASSIGNMENT
(t = 8.3 msec) 1 Cathode
Forward Peak Gate Power PGM 5.0 Watts 2 Anode
(Pulse Width ≤ 1.0 msec, TC = 90°C) 3 Gate
Forward Average Gate Power PG(AV) 0.5 Watts 4 Anode
(t = 8.3 msec, TC = 90°C)
Forward Peak Gate Current IGM 2.0 Amps
(Pulse Width ≤ 1.0 msec, TC = 90°C) ORDERING INFORMATION
Operating Junction Temperature Range TJ – 40 to 125 °C Device Package Shipping
Storage Temperature Range Tstg – 40 to 150 °C
MCR12DCMT4 DPAK 369A 16mm Tape
(1) VDRM for all types can be applied on a continuous basis. Ratings apply for and Reel
zero or negative gate voltage; positive gate voltage shall not be applied (2.5K/Reel)
concurrent with negative potential on the anode. Blocking voltages shall not
be tested with a constant current source such that the voltage ratings of the MCR12DCNT4 DPAK 369A 16mm Tape
device are exceeded. and Reel
(2.5K/Reel)

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 2000 522 Publication Order Number:

May, 2000 – Rev. 2 MCR12DCM/D
 MCR12DCM, MCR12DCN

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance — Junction to Case RqJC 2.2 °C/W
Thermal Resistance — Junction to Ambient RqJA 88
Thermal Resistance — Junction to Ambient(1) RqJA 80
Maximum Lead Temperature for Soldering Purposes(2) TL 260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current IDRM, mA
(VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C IRRM — — 0.01
TJ = 125°C — — 5.0
ON CHARACTERISTICS
Peak Forward On–State Voltage(3) VTM Volts
(ITM = 20 A) — 1.3 1.9
Gate Trigger Current (Continuous dc) IGT mA
(VD = 12 V, RL = 100 )W TJ = 25°C 2.0 7.0 20
*
TJ = 40°C — — 40
Gate Trigger Voltage (Continuous dc) VGT Volts
(VD = 12 V, RL = 100 )W TJ = 25°C 0.5 0.65 1.0
*
TJ = 40°C — — 2.0
Gate Non–Trigger Voltage VGD 0.2 — — Volts
(VD = 12 V, RL = 100 )W TJ = 125°C
Holding Current IH mA
(VD = 12 V, Initiating Current = 200 mA, Gate Open) TJ = 25°C 4.0 22 40
TJ = –40°C — — 80
Latching Current IL mA
(VD = 12 V, IG = 20 mA, TJ = 25°C) 4.0 22 40
(VD = 12 V, IG = 40 mA, TJ = –40°C) — — 80

DYNAMIC CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Critical Rate of Rise of Off–State Voltage dv/dt m
V/ s
(VD = Rated VDRM, Exponential Waveform, Gate Open, 50 200 —
TJ = 125°C)
(1) Surface mounted on minimum recommended pad size.
(2) 1/8″ from case for 10 seconds.
(3) Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.

http://onsemi.com
523
 MCR12DCM, MCR12DCN

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –

125 16

P(AV) , AVERAGE POWER DISSIPATION (WATTS)

TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C)

180°
120 14 120°
90°
115 12 a 60° dc
110 10 a = Conduction
Angle
105 8.0
dc a = 30°
100 a 6.0

95 a = Conduction 4.0
Angle
90 2.0
a = 30° 60° 90° 120° 180°
85 0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
IT(AV), AVERAGE ON–STATE CURRENT (AMPS) IT(AV), AVERAGE ON–STATE CURRENT (AMPS)

Figure 1. Average Current Derating Figure 2. On–State Power Dissipation

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524
 MCR12DCM, MCR12DCN

100 1.0
I T, INSTANTANEOUS ON–STATE CURRENT (AMPS) TYPICAL @ TJ = 25°C
MAXIMUM @ TJ = 125°C

r(t) , TRANSIENT RESISTANCE

10

(NORMALIZED)
0.1
MAXIMUM @ TJ = 25°C ZqJC(t) = RqJC(t)Sr(t)
1.0

0.1 0.01
0 1.0 2.0 3.0 4.0 5.0 0.1 1.0 10 100 1000 10 K
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) t, TIME (ms)

Figure 3. On–State Characteristics Figure 4. Transient Thermal Response

100 0.9

VGT, GATE TRIGGER VOLTAGE (VOLTS)

I GT, GATE TRIGGER CURRENT (mA)

0.8

0.7

0.6
10
0.5

0.4

0.3

1.0 0.2
–40 –25 –10 5.0 20 35 50 65 80 95 110 125 –40 –25 –10 5.0 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 5. Typical Gate Trigger Current versus Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature Junction Temperature

http://onsemi.com
525
 MCR12DCM, MCR12DCN

100 100
IH , HOLDING CURRENT (mA)

IL, LATCHING CURRENT (mA)

10 10

1.0 1.0
–40 –25 –10 5.0 20 35 50 65 80 95 110 125 –40 –25 –10 5.0 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Typical Holding Current versus Figure 8. Typical Latching Current versus
Junction Temperature Junction Temperature

1000
VD = 800 V
TJ = 125°C
STATIC dv/dt (V/ ms)

100
10 100 1000 10 K
RGK, GATE–CATHODE RESISTANCE (OHMS)

Figure 9. Exponential Static dv/dt versus

Gate–Cathode Resistance

http://onsemi.com
526
 MCR12DCM, MCR12DCN

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the interface between the board and the package. With the
total design. The footprint for the semiconductor packages correct pad geometry, the packages will self align when
must be the correct size to insure proper solder connection subjected to a solder reflow process.

0.165 0.118
4.191 3.0
0.100
2.54
0.063
1.6
0.190 0.243
4.826 6.172

inches
mm
DPAK

http://onsemi.com
527
MCR12DSM, MCR12DSN
Preferred Device

Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light http://onsemi.com
and speed control.
• Small Size SCRs
• Passivated Die for Reliability and Uniformity 12 AMPERES RMS
• Low Level Triggering and Holding Characteristics 600 thru 800 VOLTS
• Device Marking: Device Type, e.g., for MCR12DSM: R12DSM,
Date Code
G
A K
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts 4
(TJ = –40 to 110°C, Sine Wave, VRRM
50 to 60 Hz, Gate Open)
1 2
MCR12DSM 600
3
MCR12DSN 800
On–State RMS Current IT(RMS) 12 Amps
(180° Conduction Angles; TC = 75°C) D–PAK
CASE 369A
Average On–State Current IT(AV) 7.6 Amps STYLE 4
(180° Conduction Angles; TC = 75°C)
Peak Non-Repetitive Surge Current ITSM 100 Amps PIN ASSIGNMENT
(1/2 Cycle, Sine Wave 60 Hz, 1 Cathode
TJ = 110°C)
2 Anode
Circuit Fusing Consideration I2t 41 A2sec
(t = 8.3 msec) 3 Gate
4 Anode
Forward Peak Gate Power PGM 5.0 Watts
(Pulse Width ≤ 1.0 msec, TC = 75°C)
Forward Average Gate Power PG(AV) 0.5 Watts ORDERING INFORMATION
(t = 8.3 msec, TC = 75°C)
Device Package Shipping
Forward Peak Gate Current IGM 2.0 Amps
(Pulse Width ≤ 1.0 msec, TC = 75°C) MCR12DSMT4 DPAK 369A 16mm Tape
Operating Junction Temperature Range TJ – 40 to 110 °C and Reel
(2.5K/Reel)
Storage Temperature Range Tstg – 40 to 150 °C
MCR12DSNT4 DPAK 369A 16mm Tape
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
and Reel
apply for zero or negative gate voltage; however, positive gate voltage shall
(2.5K/Reel)
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded. Preferred devices are recommended choices for future use
and best overall value.

 Semiconductor Components Industries, LLC, 2000 528 Publication Order Number:

May, 2000 – Rev. 2 MCR12DSM/D
 MCR12DSM, MCR12DSN

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance — Junction to Case RqJC 2.2 °C/W
Thermal Resistance — Junction to Ambient RqJA 88
Thermal Resistance — Junction to Ambient(1) RqJA 80
Maximum Lead Temperature for Soldering Purposes(2) TL 260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current(3) IDRM, mA
(VAK = Rated VDRM or VRRM; RGK = 1.0 K ) W TJ = 25°C IRRM — — 10
TJ = 110°C — — 500
ON CHARACTERISTICS
Peak Reverse Gate Blocking Voltage VGRM Volts
m
(IGR = 10 A) 10 12.5 18
Peak Reverse Gate Blocking Current IGRM mA
(VGR = 10 V) — — 1.2
Peak Forward On–State Voltage(4) VTM Volts
(ITM = 20 A) — 1.3 1.9
Gate Trigger Current (Continuous dc)(5) IGT mA
(VD = 12 V, RL = 100 ) W TJ = 25°C 5.0 12 200
TJ = –40°C — — 300
Gate Trigger Voltage (Continuous dc)(5) VGT Volts
(VD = 12 V, RL = 100 ) W TJ = 25°C 0.45 0.65 1.0
TJ = –40°C — — 1.5
TJ = 110°C 0.2 — —
Holding Current IH mA
(VD = 12 V, Initiating Current = 200 mA, Gate Open) TJ = 25°C 0.5 1.0 6.0
TJ = –40°C — — 10
Latching Current IL mA
(VD = 12 V, IG = 2.0 mA) TJ = 25°C 0.5 1.0 6.0
TJ = –40°C — — 10
Turn–On Time tgt ms
W
(Source Voltage = 12 V, RS = 6.0 K , IT = 16 A(pk), RGK = 1.0 K ) W — 2.0 5.0
(VD = Rated VDRM, Rise Time = 20 ns, Pulse Width = 10 s) m
DYNAMIC CHARACTERISTICS
Characteristics Symbol Min Typ Max Unit
Critical Rate of Rise of Off–State Voltage dv/dt m
V/ s
(VD = 0.67 X Rated VDRM, Exponential Waveform, 2.0 10 —
W
RGK = 1.0 K , TJ = 110°C)
(1) Surface mounted on minimum recommended pad size.
(2) 1/8″ from case for 10 seconds.
W
(3) Ratings apply for negative gate voltage or RGK = 1.0 K . Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
(4) Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.
(5) RGK current not included in measurement.

http://onsemi.com
529
 MCR12DSM, MCR12DSN

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –

110 16

P(AV) , AVERAGE POWER DISSIPATION (WATTS)

TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C)

180°
105 14 120°
90°
100 12 a 60° dc
95 10 a = Conduction
Angle
90 8.0
dc a = 30°
85 6.0

80 a 180° 4.0

75 a = Conduction 2.0
Angle a = 30° 60° 90° 120°
70 0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
IT(AV), AVERAGE ON–STATE CURRENT (AMPS) IT(AV), AVERAGE ON–STATE CURRENT (AMPS)

Figure 1. Average Current Derating Figure 2. On–State Power Dissipation

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530
 MCR12DSM, MCR12DSN

100 1.0
I T, INSTANTANEOUS ON–STATE CURRENT (AMPS) TYPICAL @ TJ = 25°C

r(t) , TRANSIENT THERMAL RESISTANCE

MAXIMUM @ TJ = 110°C

10

(NORMALIZED)
0.1
MAXIMUM @ TJ = 25°C ZqJC(t) = RqJC(t)Sr(t)
1.0

0.1 0.01
0 1.0 2.0 3.0 4.0 5.0 0.1 1.0 10 100 1000 10 K
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) t, TIME (ms)

Figure 3. On–State Characteristics Figure 4. Transient Thermal Response

1000 1.0

VGT, GATE TRIGGER VOLTAGE (VOLTS)

I GT, GATE TRIGGER CURRENT ( A)

W
m

RGK = 1.0 K
100

GATE OPEN
10

1.0 0.1
–40 –25 –10 5.0 20 35 50 65 80 95 110 –40 –25 –10 5.0 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 5. Typical Gate Trigger Current versus Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature Junction Temperature

10 10
RGK = 1.0 K W RGK = 1.0 K W
IH , HOLDING CURRENT (mA)

IL, LATCHING CURRENT (mA)

1.0 1.0

0.1 0.1
–40 –25 –10 5.0 20 35 50 65 80 95 110 –40 –25 –10 5.0 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Typical Holding Current versus Figure 8. Typical Latching Current versus
Junction Temperature Junction Temperature

http://onsemi.com
531
 MCR12DSM, MCR12DSN

10 1000
TJ = 25°C

8.0
IH, HOLDING CURRENT (mA)

70°C

STATIC dv/dt (V/m s)

100
6.0
90°C
IGT = 25 mA
4.0 TJ = 110°C
10

2.0 IGT = 10 mA

0 1.0
100 1000 10 K 100 1000
RGK, GATE–CATHODE RESISTANCE (OHMS) RGK, GATE–CATHODE RESISTANCE (OHMS)

Figure 9. Holding Current versus Figure 10. Exponential Static dv/dt versus
Gate–Cathode Resistance Gate–Cathode Resistance and Junction
Temperature

1000 1000
TJ = 110°C VD = 800 V
400 V TJ = 110°C
STATIC dv/dt (V/ ms)

STATIC dv/dt (V/ ms)

100 100
600 V IGT = 25 mA

VPK = 800 V
IGT = 10 mA
10 10

1.0 1.0
100 1000 100 1000
RGK, GATE–CATHODE RESISTANCE (OHMS) RGK, GATE–CATHODE RESISTANCE (OHMS)

Figure 11. Exponential Static dv/dt versus Figure 12. Exponential Static dv/dt versus
Gate–Cathode Resistance and Peak Voltage Gate–Cathode Resistance and Gate Trigger
Current Sensitivity

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532
 MCR12DSM, MCR12DSN

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the interface between the board and the package. With the
total design. The footprint for the semiconductor packages correct pad geometry, the packages will self align when
must be the correct size to insure proper solder connection subjected to a solder reflow process.

0.165 0.118
4.191 3.0
0.100
2.54
0.063
1.6
0.190 0.243
4.826 6.172

inches
mm
DPAK

http://onsemi.com
533
MCR12LD, MCR12LM,
MCR12LN
Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors
Designed primarily for half–wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever http://onsemi.com
half–wave, silicon gate–controlled devices are needed.
• Blocking Voltage to 800 Volts SCRs
• On–State Current Rating of 12 Amperes RMS at 80°C 12 AMPERES RMS
• High Surge Current Capability — 100 Amperes 400 thru 800 VOLTS
• Rugged, Economical TO–220AB Package
• Glass Passivated Junctions for Reliability and Uniformity
• Minimum and Maximum Values of IGT, VGT and IH Specified for G
Ease of Design A K
• High Immunity to dv/dt — 100 V/µsec Minimum at 125°C
• Device Marking: Logo, Device Type, e.g., MCR12LD, Date Code

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) 4

Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to 125°C, Sine Wave, 50 to VRRM
60 Hz, Gate Open) MCR12LD 400
MCR12LM 600
MCR12LN 800 1
2
On-State RMS Current IT(RMS) 12 A 3
(180° Conduction Angles; TC = 80°C)
TO–220AB
Peak Non-repetitive Surge Current ITSM 100 A CASE 221A
(1/2 Cycle, Sine Wave 60 Hz, STYLE 3
TJ = 125°C)
Circuit Fusing Consideration I2t 41 A2sec PIN ASSIGNMENT
(t = 8.3 ms) 1 Cathode
Forward Peak Gate Power PGM 5.0 Watts 2 Anode
(Pulse Width ≤ 1.0 µs, TC = 80°C)
3 Gate
Forward Average Gate Power PG(AV) 0.5 Watt Anode
4
(t = 8.3 ms, TC = 80°C)
Forward Peak Gate Current IGM 2.0 A
(Pulse Width ≤ 1.0 µs, TC = 80°C)
ORDERING INFORMATION
Operating Junction Temperature Range TJ – 40 to 125 °C
Device Package Shipping
Storage Temperature Range Tstg – 40 to 150 °C
MCR12LD TO220AB 50 Units/Rail
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be MCR12LM TO220AB 50 Units/Rail
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage MCR12LN TO220AB 50 Units/Rail
ratings of the devices are exceeded.

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 1999 534 Publication Order Number:

February, 2000 – Rev. 0 MCR12L/D
 MCR12LD, MCR12LM, MCR12LN

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance — Junction to Case RθJC 2.2 °C/W
— Junction to Ambient RθJA 62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current TJ = 25°C IDRM, — — 0.01 mA
(VD = Rated VDRM and VRRM; Gate Open) TJ = 125°C IRRM — — 2.0

ON CHARACTERISTICS
Peak Forward On–State Voltage* (ITM = 24 A) VTM — — 2.2 Volts
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) IGT 2.0 4.0 8.0 mA
Holding Current (VD = 12 V, Gate Open, Initiating Current = 200 mA) IH 4.0 10 20 mA
Latch Current (VD = 12 V, Ig = 20 mA) IL 6.0 12 30 mA
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) VGT 0.5 0.65 0.8 Volts
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage dv/dt 100 250 — V/µs
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
Critical Rate of Rise of On–State Current di/dt — — 50 A/µs
IPK = 50 A; Pw = 40 µsec; diG/dt = 1 A/µsec, Igt = 50 mA
*Indicates Pulse Test: Pulse Width v 1.0 ms, Duty Cycle v 2%.

http://onsemi.com
535
 MCR12LD, MCR12LM, MCR12LN

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –

10 1.0
9

VGT , GATE TRIGGER VOLTAGE (VOLTS)

0.9
GATE TRIGGER CURRENT (mA)

8
0.8
7
6 0.7

5 0.6
4 0.5
3
0.4
2
1 0.3

0 0.2
–40 –25 –10 5.0 20 35 50 65 80 95 110 125 –40 –25 –10 5.0 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 1. Typical Gate Trigger Current Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature versus Junction Temperature

100 100
IL , LATCHING CURRENT (mA)
I H, HOLDING CURRENT (mA)

10 10

1.0 1.0
–40 –25 –10 5.0 20 35 50 65 80 95 110 125 –40 –25 –10 5.0 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical Holding Current Figure 4. Typical Latching Current

versus Junction Temperature versus Junction Temperature

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536
 MCR12LD, MCR12LM, MCR12LN

125 20

P(AV), AVERAGE POWER DISSIPATION (WATTS)

180°
18
120
α α
TC, CASE TEMPERATURE (° C)

16
115 α = CONDUCTION ANGLE 14 α = CONDUCTION ANGLE 90°
dc

110 12
α = 30°
10
105
8
100 6
dc 4
95 TJ = 125°C
α = 30° 60° 90° 180° 2
90 0
0 1 2 3 4 5 6 7 8 9 10 11 12 0 1 2 3 4 5 6 7 8 9 10 11 12
IT(RMS), RMS ON-STATE CURRENT (AMP) IT(AV), AVERAGE ON-STATE CURRENT (AMPS)

Figure 5. Typical RMS Current Derating Figure 6. On–State Power Dissipation

100

70

50

30

20
I T , INSTANTANEOUS ON–STATE CURRENT (AMPS)

10 125°C
25°C
7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1
0.5 1.0 1.5 2.0 2.5 3.0
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)

Figure 7. Typical On–State Characteristics

http://onsemi.com
537
MCR16N
Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors
Designed primarily for half–wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half–wave, silicon gate–controlled devices are needed.
http://onsemi.com
• Blocking Voltage to 800 Volts
• On–State Current Rating of 16 Amperes RMS
SCRs
• High Surge Current Capability — 160 Amperes
16 AMPERES RMS
• Rugged Economical TO–220AB Package
• Glass Passivated Junctions for Reliability and Uniformity 800 VOLT
• Minimum and Maximum Values of IGT, VGT, and IH Specified for
Ease of Design
• High Immunity to dv/dt — 100 V/µsec Minimum at 125°C G

• Device Marking: Logo, Device Type, e.g., MCR16N, Date Code A K

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit
4
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to 125°C, Sine Wave, 50 to VRRM
60 Hz, Gate Open) MCR16N 800
On-State RMS Current IT(RMS) 16 A
(180° Conduction Angles; TC = 80°C)
Peak Non-repetitive Surge Current ITSM 160 A 1
2
(1/2 Cycle, Sine Wave 60 Hz, 3
TJ = 125°C)
TO–220AB
Circuit Fusing Consideration I2t 106 A2sec
CASE 221A
(t = 8.3 ms)
STYLE 3
Forward Peak Gate Power PGM 5.0 Watts
(Pulse Width ≤ 1.0 µs, TC = 80°C) PIN ASSIGNMENT
Forward Average Gate Power PG(AV) 0.5 Watts 1 Cathode
(t = 8.3 ms, TC = 80°C)
2 Anode
Forward Peak Gate Current IGM 2.0 A 3 Gate
(Pulse Width ≤ 1.0 µs, TC = 80°C)
4 Anode
Operating Junction Temperature Range TJ – 40 to °C
+125
Storage Temperature Range Tstg – 40 to °C ORDERING INFORMATION
+150
Device Package Shipping
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be MCR16N TO220AB 50 Units/Rail
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded. Preferred devices are recommended choices for future use
and best overall value.

 Semiconductor Components Industries, LLC, 1999 538 Publication Order Number:

February, 2000 – Rev. 2 MCR16/D
 MCR16N

THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case RθJC 1.5 °C/W
— Junction to Ambient RθJA 62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current TJ = 25°C IDRM, — — 0.01 mA
(VAK = Rated VDRM or VRRM, Gate Open) TJ = 125°C IRRM — — 2.0
ON CHARACTERISTICS
Peak Forward On–State Voltage* (ITM = 32 A) VTM — — 1.7 Volts
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) IGT 2.0 10 20 mA
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) VGT 0.5 0.65 1.0 Volts
Hold Current (Anode Voltage = 12 V, Initiating Current = 200 mA, IH 4.0 25 40 mA
Gate Open)
Latch Current IL — 30 60 mA
(VD = 12 V, Ig = 200 mA)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage dv/dt 100 300 — V/µs
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
Critical Rate of Rise of On–State Current di/dt — — 50 A/µs
(IPK = 50 A, Pw = 30 µs, diG/dt = 1 A/µsec, Igt = 50 mA)
*Indicates Pulse Test: Pulse Width v 2.0 ms, Duty Cycle v 2%.

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539
 MCR16N

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –

130 32

P(AV), AVERAGE POWER DISSIPATION (WATTS)

α
TC, CASE TEMPERATURE (° C)

120 180°
24 α
α = CONDUCTION ANGLE 90°
α = CONDUCTION ANGLE 60° dc
110
α = 30°
16
100

8
90
dc
α = 30° 60° 90° 180°
80 0
0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16
IT(RMS), ITRMS ON–STATE CURRENT (AMPS) IT(AV), AVERAGE ON–STATE CURRENT (AMPS)

Figure 1. Typical RMS Current Derating Figure 2. On State Power Dissipation

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540
 MCR16N

100 1

R(t) TRANSIENT THERMAL R (NORMALIZED)

Typical @ TJ = 25°C

Maximum @ TJ = 125°C ZqJC(t) = RqJC(t) ⋅ r(t)

0.1
I T , INSTANTANEOUS ON–STATE CURRENT (AMPS)

10

0.01
0.1 1 10 100 1000 1⋅104
t, TIME (ms)
Maximum @ TJ = 25°C
Figure 4. Transient Thermal Response

100

1
IH, HOLDING CURRENT (mA)

10

0.1 1
0.5 0.9 1.3 1.7 2.1 2.5 –40 –25 –10 5 20 35 50 65 80 95 110 125
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical On–State Characteristics Figure 5. Typical Holding Current versus

Junction Temperature

100 30

25
GATE TRIGGER CURRENT (mA)
IL , LATCHING CURRENT (mA)

20

10 15

10

1 0
–40 –25 –10 5 20 35 50 65 80 95 110 125 –40 –25 –10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Typical Latching Current versus Figure 7. Typical Gate Trigger Current versus
Junction Temperature Junction Temperature

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541
 MCR16N

1.0 160
1 Cycle
V GT, GATE TRIGGER VOLTAGE (VOLTS)

I TSM , PEAK SURGE CURRENT (AMP)

0.9 150
0.8
140
0.7
130
0.6
120
0.5
110
0.4
TJ = 125°C f = 60 Hz
0.3 100

0.2 90
–40 –25 –10 5 20 35 50 65 80 95 110 125 1 2 3 4 5 6 7 8 9 10
TJ, JUNCTION TEMPERATURE (°C) NUMBER OF CYCLES

Figure 8. Typical Gate Trigger Voltage versus Figure 9. Maximum Non–Repetitive

Junction Temperature Surge Current

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542
MCR22-6, MCR22-8
Preferred Device

Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed and tested for repetitive peak operation required for CD
ignition, fuel ignitors, flash circuits, motor controls and low-power http://onsemi.com
switching applications.
• 150 Amperes for 2 µs Safe Area SCRs
• High dv/dt
1.5 AMPERES RMS
• Very Low Forward “On” Voltage at High Current
• Low-Cost TO-226AA (TO-92) 400 thru 600 VOLTS
• Device Marking: Device Type, e.g., MCR22–6, Date Code
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
A K
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage VDRM, Volts
*
(RGK = IK, TJ = 40 to +110°C, VRRM
Sine Wave, 50 to 60 Hz, Gate Open)
MCR22–6 400
MCR22–8 600
On-State Current RMS IT(RMS) 1.5 Amps
(180° Conduction Angles, TC = 80°C)
Peak Non-repetitive Surge Current, ITSM 15 Amps 1
TA = 25°C 2
3
(1/2 Cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations (t = 8.3 ms) I2t 0.9 A2s TO–92 (TO–226AA)
Forward Peak Gate Power PGM 0.5 Watt CASE 029
STYLE 10
(Pulse Width ≤ 1.0 msec, TA = 25°C)
Forward Average Gate Power PG(AV) 0.1 Watt PIN ASSIGNMENT
(t = 8.3 msec, TA = 25°C)
1 Cathode
Forward Peak Gate Current IFGM 0.2 Amp
2 Gate
(Pulse Width ≤ 1.0 µs, TA = 25°C)
3 Anode
Reverse Peak Gate Voltage VRGM 5.0 Volts
(Pulse Width ≤ 1.0 µs, TA = 25°C)
Operating Junction Temperature Range TJ –40 to °C
ORDERING INFORMATION
@ Rated VRRM and VDRM +110
See detailed ordering and shipping information in the package
Storage Temperature Range Tstg –40 to °C dimensions section on page 549 of this data sheet.
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings Preferred devices are recommended choices for future use
and best overall value.
apply for zero or negative gate voltage; however, positive gate voltage
shall not be applied concurrent with negative potential on the anode.
Blocking voltages shall not be tested with a constant current source such
that the voltage ratings of the devices are exceeded.

 Semiconductor Components Industries, LLC, 2000 543 Publication Order Number:

May, 2000 – Rev. 3 MCR22–6/D
 MCR22–6, MCR22–8

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 50 °C/W
Thermal Resistance, Junction to Ambient RθJA 160 °C/W
Lead Solder Temperature TL +260 °C
(Lead Length q1/16″ from case, 10 s Max)

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current IDRM, IRRM
(VAK = Rated VDRM or VRRM; RGK = 1000 Ohms) TC = 25°C — — 10 µA
TC = 110°C — — 200 µA
ON CHARACTERISTICS
Peak Forward On–State Voltage(1) VTM — 1.2 1.7 Volts
(ITM = 1 A Peak)
Gate Trigger Current (Continuous dc)(2) TC = 25°C IGT — 30 200 µA
(VAK = 6 Vdc, RL = 100 Ohms) TC = –40°C — — 500
Gate Trigger Voltage (Continuous dc)(2) TC = 25°C VGT — — 0.8 Volts
(VAK = 7 Vdc, RL = 100 Ohms) TC = –40°C — — 1.2
Gate Non–Trigger Voltage(1) VGD 0.1 — — Volts
(VAK = 12 Vdc, RL = 100 Ohms) TC = 110°C
Holding Current IH mA
(VAK = 12 Vdc, Gate Open) TC = 25°C — 2.0 5.0
Initiating Current = 200 mA TC = –40°C — — 10

DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage dv/dt — 25 — V/µs
(TC = 110°C)
v
(1) Pulse Width = 1.0 ms, Duty Cycle 1%.
(2) RGK Current not included in measurement.

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544
 MCR22–6, MCR22–8

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak on State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –

CURRENT DERATING
TA , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (° C)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C)

140 140
120
100 100
80
α = 180° dc
60 60
α = CONDUCTION dc
ANGLE 40
α = 180°
20 20
α = CONDUCTION ANGLE
0 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.2 0.4 0.6 0.8 1.0
IT(AV), AVERAGE ON-STATE CURRENT (AMPS) IT(AV), AVERAGE ON-STATE CURRENT (AMP)

Figure 1. Maximum Case Temperature Figure 2. Maximum Ambient Temperature

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545
 MCR22–6, MCR22–8

5.0

3.0

2.0 TJ = 110°C
25°C

1.0

I T , INSTANTANEOUS ON-STATE CURRENT (AMP)

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.01
0 0.5 1.0 1.5 2.0 2.5
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

Figure 3. Typical Forward Voltage

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0
0.7
0.5
0.3
0.2

0.1
0.07
0.05
0.03
0.02

0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 2000 5000 10000
t, TIME (ms)

Figure 4. Thermal Response

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546
 MCR22–6, MCR22–8

TYPICAL CHARACTERISTICS

0.8 100
VGT, GATE TRIGGER VOLTAGE (VOLTS)

VAK = 7.0 V

I GT GATE TRIGGER CURRENT ( µA)

50
0.7 RL = 100
30
20
0.6
10
0.5
5.0

0.4 3.0
2.0

0.3 1.0
–75 –50 –25 0 25 50 75 100 110 –40 –20 0 20 40 60 80 100 110
TJ, JUNCTION TEMPERATURE (°C) TJ JUNCTION TEMPERATURE (°C)
Figure 5. Typical Gate Trigger Voltage Figure 6. Typical Gate Trigger Current

P(AV) MAXIMUM AVERAGE POWER DISSIPATION (WATTS)

10 2.0
1.8 180°
120
90°
I H , HOLDING CURRENT (mA)

VAK = 12 V 1.6 60° °

30°
RL = 100 Ω 1.4
5.0 1.2
1.0
dc
0.8
2.0 0.6
0.4
0.2
1.0 0
–40 –20 0 20 40 60 80 100 110 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
TJ, JUNCTION TEMPERATURE (°C) IT(AV), AVERAGE ON-STATE CURRENT (AMPS)

Figure 7. Typical Holding Current Figure 8. Power Dissipation

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547
 MCR22–6, MCR22–8

TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL

H2A H2A
H2B H2B

W2
H4 H5
T1
L1
H1
W1 W
L T

F1 T2
F2
P2 P2 D

P1
P

Figure 9. Device Positioning on Tape

Specification
Inches Millimeter
Symbol Item Min Max Min Max
D Tape Feedhole Diameter 0.1496 0.1653 3.8 4.2
D2 Component Lead Thickness Dimension 0.015 0.020 0.38 0.51
F1, F2 Component Lead Pitch 0.0945 0.110 2.4 2.8
H Bottom of Component to Seating Plane .059 .156 1.5 4.0
H1 Feedhole Location 0.3346 0.3741 8.5 9.5
H2A Deflection Left or Right 0 0.039 0 1.0
H2B Deflection Front or Rear 0 0.051 0 1.0
H4 Feedhole to Bottom of Component 0.7086 0.768 18 19.5
H5 Feedhole to Seating Plane 0.610 0.649 15.5 16.5
L Defective Unit Clipped Dimension 0.3346 0.433 8.5 11
L1 Lead Wire Enclosure 0.09842 — 2.5 —
P Feedhole Pitch 0.4921 0.5079 12.5 12.9
P1 Feedhole Center to Center Lead 0.2342 0.2658 5.95 6.75
P2 First Lead Spacing Dimension 0.1397 0.1556 3.55 3.95
T Adhesive Tape Thickness 0.06 0.08 0.15 0.20
T1 Overall Taped Package Thickness — 0.0567 — 1.44
T2 Carrier Strip Thickness 0.014 0.027 0.35 0.65
W Carrier Strip Width 0.6889 0.7481 17.5 19
W1 Adhesive Tape Width 0.2165 0.2841 5.5 6.3
W2 Adhesive Tape Position .0059 0.01968 .15 0.5
NOTES:
1. Maximum alignment deviation between leads not to be greater than 0.2 mm.
2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.
3. Component lead to tape adhesion must meet the pull test requirements.
4. Maximum non–cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.
5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.
6. No more than 1 consecutive missing component is permitted.
7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.
8. Splices will not interfere with the sprocket feed holes.

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548
 MCR22–6, MCR22–8

ORDERING & SHIPPING INFORMATION: MCR22 Series packaging options, Device Suffix
Europe
U.S. Equivalent Shipping Description of TO92 Tape Orientation
MCR22–8RL1 Radial Tape and Reel (2K/Reel) Flat side of TO92 and adhesive tape visible
MCR22–6,8 Bulk in Box (5K/Box) N/A, Bulk
MCR22–6RLRA Radial Tape and Reel (2K/Reel) Round side of TO92 and adhesive tape visible
MCR22–6RLRP Radial Tape and Fan Fold Box (2K/Box) Round side of TO92 and adhesive tape visible
MCR22–8ZL1 Radial Tape and Fan Fold Box (2K/Box) Flat side of TO92 and adhesive tape visible

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549
MCR25D, MCR25M, MCR25N
Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors
Designed primarily for half–wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half–wave, silicon gate–controlled devices are needed.
http://onsemi.com
• Blocking Voltage to 800 Volts
• On-State Current Rating of 25 Amperes RMS
SCRs
• High Surge Current Capability — 300 Amperes
25 AMPERES RMS
• Rugged, Economical TO–220AB Package
• Glass Passivated Junctions for Reliability and Uniformity 400 thru 800 VOLTS
• Minimum and Maximum Values of IGT, VGT, and IH Specified for
Ease of Design
• High Immunity to dv/dt — 100 V/µsec Minimum @ 125°C G
• Device Marking: Logo, Device Type, e.g., MCR25D, Date Code A K

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit
4
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to 125°C, Sine Wave, 50 to VRRM
60 Hz, Gate Open) MCR25D 400
MCR25M 600
MCR25N 800
On-State RMS Current IT(RMS) 25 A
1
(180° Conduction Angles; TC = 80°C) 2
3
Peak Non-repetitive Surge Current ITSM 300 A
(1/2 Cycle, Sine Wave 60 Hz, TO–220AB
TJ = 125°C) CASE 221A
STYLE 3
Circuit Fusing Consideration I2t 373 A2sec
(t = 8.3 ms)
PIN ASSIGNMENT
Forward Peak Gate Power PGM 20.0 Watts
(Pulse Width ≤ 1.0 µs, TC = 80°C) 1 Cathode
2 Anode
Forward Average Gate Power PG(AV) 0.5 Watt
(t = 8.3 ms, TC = 80°C) 3 Gate

Forward Peak Gate Current IGM 2.0 A 4 Anode

(Pulse Width ≤ 1.0 µs, TC = 80°C)
Operating Junction Temperature Range TJ – 40 to °C
+125 ORDERING INFORMATION
Storage Temperature Range Tstg – 40 to °C Device Package Shipping
+150
MCR25D TO220AB 50 Units/Rail
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be MCR25M TO220AB 50 Units/Rail
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage MCR25N TO220AB 50 Units/Rail
ratings of the devices are exceeded.

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 1999 550 Publication Order Number:

February, 2000 – Rev. 3 MCR25/D
 MCR25D, MCR25M, MCR25N

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance — Junction to Case RθJC 1.5 °C/W
— Junction to Ambient RθJA 62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current IDRM mA
(VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C IRRM — — 0.01
TJ = 125°C — — 2.0

ON CHARACTERISTICS
Peak Forward On-State Voltage* (ITM = 50 A) VTM — — 1.8 Volts
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) IGT 4.0 12 30 mA
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) VGT 0.5 0.67 1.0 Volts
Holding Current (VD =12 Vdc, Initiating Current = 200 mA, Gate Open) IH 5.0 13 40 mA
Latching Current (VD = 12 V, IG = 30 mA) IL — 35 80 mA
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage dv/dt 100 250 — V/µs
(VD = 67% of Rated VDRM, Exponential Waveform, Gate Open,
TJ = 125°C)

Critical Rate of Rise of On–State Current di/dt — — 50 A/µs

(IPK = 50 A, Pw = 30 µsec, diG/dt = 1 A/µsec, Igt = 50 mA)
*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

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551
 MCR25D, MCR25M, MCR25N

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –

40 1.0

35 0.9
I GT, GATE TRIGGER CURRENT (mA)

VGT, GATE TRIGGER VOLTAGE (V)

30 0.8

25 0.7

20 0.6

15 0.5

10 0.4

5 0.3
0 0.2
–40 –25 –10 5 20 35 50 65 80 95 110 125 –40 –25 –10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 1. Typical Gate Trigger Current versus Figure 2. Typical Gate Trigger Voltage versus
Junction Temperature Junction Temperature

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552
 MCR25D, MCR25M, MCR25N

I T, INSTANTANEOUS ON–STATE CURRENT (A)

1
100

R(t) TRANSIENT THERMAL R (NORMALIZED)

Typical @ 25°C Maximum @ 125°C

+ RqJC @ R(t)
10
Z
Maximum @ 25°C qJC(t)
0.1

0.1 0.01
0.5 0.9 1.3 1.7 2.1 2.5 2.9 0.1 1 10 100 1000 1@10 4
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) t, TIME (ms)
Figure 3. Typical On–State Characteristics Figure 4. Transient Thermal Response

100 100

IL , LATCHING CURRENT (mA)

I H , HOLDING CURRENT (mA)

10 10

1 1
–40 –25 –10 5 20 35 50 65 80 95 110 125 –40 –25 –10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 5. Typical Holding Current versus Figure 6. Typical Latching Current versus
Junction Temperature Junction Temperature

32
P(AV), AVERAGE POWER DISSIPATION (WATTS)

130

28
180° dc
120
TC , CASE TEMPERATURE ( °C)

a 24 a
90°
a = Conduction 20 a = Conduction 60°
110
Angle Angle
16
100
a = 30°
12

dc 8
90
4
a = 30° 60° 90° 180°
80 0
0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20
IT(RMS), RMS ON–STATE CURRENT (AMPS) IT(AV), AVERAGE ON–STATE CURRENT (AMPS)

Figure 7. Typical RMS Current Derating Figure 8. On State Power Dissipation

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553
 MCR25D, MCR25M, MCR25N

1200 2500
Gate Cathode Open,
Gate–Cathode Open, (dv/dt does not depend on RGK )
1000 (dv/dt does not depend on RGK) 2000

STATIC dv/dt (V/us)

800
STATIC dv/dt (V/us)

1500
85°C VPK = 275
600
100°C
110°C 1000
400 VPK = 400
TJ = 125°C VPK = 600
500
200 VPK = 800

0 0
200 300 400 500 600 700 800 80 85 90 95 100 105 110 115 120 125
VPK , Peak Voltage (Volts) TJ, Junction Temperature (°C )

Figure 9. Typical Exponential Static dv/dt Figure 10. Typical Exponential Static dv/dt
Versus Peak Voltage. Versus Junction Temperature.

300

1 CYCLE
280
I TSM, SURGE CURRENT (AMPS)

260

240

220

200
TJ=125° C f=60 Hz
180

160
1 2 3 4 5 6 7 8 9 10
NUMBER OF CYCLES
Figure 11. Maximum Non–Repetitive
Surge Current

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554
MCR68-2

Silicon Controlled Rectifiers

Reverse Blocking Thyristors
Designed for overvoltage protection in crowbar circuits.
• Glass-Passivated Junctions for Greater Parameter Stability and
Reliability
http://onsemi.com
• Center-Gate Geometry for Uniform Current Spreading Enabling
High Discharge Current SCRs
• Small Rugged, Thermowatt Package Constructed for Low Thermal
12 AMPERES RMS
Resistance and Maximum Power Dissipation and Durability
• High Capacitor Discharge Current, 300 Amps 50 VOLTS
• Device Marking: Logo, Device Type, e.g., MCR68–2, Date Code
G
A K
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
*
(TJ = 40 to +125°C, Gate Open) VRRM
MCR68–2 50 4
Peak Discharge Current(2) ITM 300 Amps
On-State RMS Current IT(RMS) 12 Amps
(180° Conduction Angles; TC = 85°C)
Average On-State Current IT(AV) 8.0 Amps
(180° Conduction Angles; TC = 85°C) 1
2
Peak Non-Repetitive Surge Current ITSM 100 Amps 3
(1/2 Cycle, Sine Wave, 60 Hz,
TO–220AB
TJ = 125°C)
CASE 221A
Circuit Fusing Considerations I2t 40 A2s STYLE 3
(t = 8.3 ms)
Forward Peak Gate Current IGM 2.0 Amps PIN ASSIGNMENT
(t ≤ 1.0 µs, TC = 85°C) 1 Cathode
Forward Peak Gate Power PGM 20 Watts 2 Anode
(t ≤ 1.0 µs, TC = 85°C) 3 Gate
Forward Average Gate Power PG(AV) 0.5 Watt 4 Anode
(t = 8.3 ms, TC = 85°C)
Operating Junction Temperature Range TJ – 40 to °C
+125 ORDERING INFORMATION
Storage Temperature Range Tstg – 40 to °C Device Package Shipping
+150
MCR68–2 TO220AB 500/Box
Mounting Torque — 8.0 in. lb.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various
duration of an exponentially decaying current waveform, t w is defined as
5 time constants of an exponentially decaying current pulse.

 Semiconductor Components Industries, LLC, 1999 555 Publication Order Number:

February, 2000 – Rev. 1 MCR68/D
 MCR68–2

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 2.0 °C/W
Thermal Resistance, Junction to Ambient RθJA 60 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current IDRM, IRRM
(VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C — — 10 µA
TJ = 125°C — — 2.0 mA
ON CHARACTERISTICS
Peak Forward On-State Voltage VTM Volts
(ITM = 24 A)(1) — — 2.2
(ITM = 300 A, tw = 1 ms)(2) — 6.0 —
Gate Trigger Current (Continuous dc) IGT 2.0 7.0 30 mA
(VD = 12 V, RL = 100 Ω)
Gate Trigger Voltage (Continuous dc) VGT — 0.65 1.5 Volts
(VD = 12 V, RL = 100 Ω)
Gate Non–Trigger Voltage VGD 0.2 0.40 — Volts
(VD = 12 Vdc, RL = 100 Ω, TJ = 125°C)
Holding Current IH 3.0 15 50 mA
(VD = 12 V, Initiating Current = 200 mA, Gate Open)
Latching Current IL — — 60 mA
(VD = 12 Vdc, IG = 150 mA)
Gate Controlled Turn-On Time(3) tgt — 1.0 — µs
(VD = Rated VDRM, IG = 150 mA)
(ITM = 24 A Peak)

DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage dv/dt 10 — — V/µs
(VD = Rated VDRM, Gate Open, Exponential Waveform, TJ = 125°C)
Critical Rate-of-Rise of On-State Current di/dt — — 75 A/µs
IG = 150 mA TJ = 125°C
(1) Pulse duration p 300 µs, duty cycle p 2%.
(2) Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various durations of an exponentially decaying current waveform. tw is defined
as 5 time constants of an exponentially decaying current pulse.
(3) The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance.

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556
 MCR68–2

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –
I TM, PEAK DISCHARGE CURRENT (AMPS)

1000
NORMALIZED PEAK CURRENT

1.0
300
200 0.8

0.6
100
ITM
0.4
50
tw 0.2
tw = 5 time constants
20 0
0.5 1.0 2.0 5.0 10 20 50 25 50 75 100 125
tw, PULSE CURRENT DURATION (ms) TC, CASE TEMPERATURE (°C)

Figure 1. Peak Capacitor Discharge Current Figure 2. Peak Capacitor Discharge Current
Derating
P(AV) , AVERAGE POWER DISSIPATION (WATTS)

125 20
TC , MAXIMUM CASE TEMPERATURE (° C)

120 18 Half Wave

115
dc dc
110 14
105
100 10
Half Wave
95 8.0
TJ = 125°C
90
85 4.0
80 2.0
75
1.0 2.0 5.0 8.0 10 1.0 2.0 4.0 5.0 8.0 10
IT(AV), AVERAGE ON-STATE CURRENT (AMPS) IT(AV), AVERAGE ON-STATE CURRENT (AMPS)

Figure 3. Current Derating Figure 4. Maximum Power Dissipation

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557
 MCR68–2

1
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0.7
0.5
0.3
0.2
ZθJC(t) = RθJC • r(t)
0.1
0.07
0.05
0.03
0.02

0.01
0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1k 2k 3k 5k 10 k
t, TIME (ms)

Figure 5. Thermal Response

10
NORMALIZED GATE TRIGGER CURRENT

NORMALIZED GATE TRIGGER VOLTAGE

1.4
5.0
VD = 12 Volts
3.0 RL = 100 Ω 1.2
VD = 12 Volts
2.0 RL = 100 Ω

1.0 1.0

0.5
0.8
0.3
0.2

0.5
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Gate Trigger Current Figure 7. Gate Trigger Voltage

3.0

2.0
NORMALIZED HOLD CURRENT

VD = 12 Volts
ITM = 100 mA

1.0
0.8

0.5

0.3
–60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)

Figure 8. Holding Current

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558
MCR69-2, MCR69-3

Silicon Controlled Rectifiers

Reverse Blocking Thyristors
Designed for overvoltage protection in crowbar circuits.
• Glass-Passivated Junctions for Greater Parameter Stability and
Reliability
• Center-Gate Geometry for Uniform Current Spreading Enabling http://onsemi.com
High Discharge Current
• Small Rugged, Thermowatt Package Constructed for Low Thermal SCRs
Resistance and Maximum Power Dissipation and Durability 25 AMPERES RMS
• High Capacitor Discharge Current, 750 Amps 50 thru 100 VOLTS
• Device Marking: Logo, Device Type, e.g., MCR69–2, Date Code
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
A K
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
*
(TJ = 40 to +125°C, Gate Open) VRRM
MCR69–2 50
MCR69–3 100 4
Peak Discharge Current(2) ITM 750 Amps
On-State RMS Current IT(RMS) 25 Amps
(180° Conduction Angles; TC = 85°C)
Average On-State Current IT(AV) 16 Amps
(180° Conduction Angles; TC = 85°C) 1
2
Peak Non-Repetitive Surge Current ITSM 300 Amps 3
(1/2 Cycle, Sine Wave, 60 Hz,
TO–220AB
TJ = 125°C)
CASE 221A
Circuit Fusing Considerations I2t 375 A2s STYLE 3
(t = 8.3 ms)
Forward Peak Gate Current IGM 2.0 Amps PIN ASSIGNMENT
(t ≤ 1.0 µs, TC = 85°C) 1 Cathode
Forward Peak Gate Power PGM 20 Watts 2 Anode
(t ≤ 1.0 µs, TC = 85°C)
3 Gate
Forward Average Gate Power PG(AV) 0.5 Watt 4 Anode
(t = 8.3 ms, TC = 85°C)
Operating Junction Temperature Range TJ – 40 to °C
+125 ORDERING INFORMATION
Storage Temperature Range Tstg – 40 to °C Device Package Shipping
+150
MCR69–2 TO220AB 500/Box
Mounting Torque — 8.0 in. lb.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings MCR69–3 TO220AB 500/Box
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various
duration of an exponentially decaying current waveform, t w is defined as
5 time constants of an exponentially decaying current pulse.
(3) Test Conditions: IG = 150 mA, VD = Rated VDRM, ITM = Rated Value,
TJ = 125°C.

 Semiconductor Components Industries, LLC, 1999 559 Publication Order Number:

February, 2000 – Rev. 0 MCR69/D
 MCR69–2, MCR69–3

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 1.5 °C/W
Thermal Resistance, Junction to Ambient RθJA 60 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current IDRM, IRRM
(VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C — — 10 µA
TJ = 125°C — — 2.0 mA
ON CHARACTERISTICS
Peak Forward On-State Voltage VTM Volts
(ITM = 50 A)(1) — — 1.8
(ITM = 750 A, tw = 1 ms)(2) — 6.0 —
Gate Trigger Current (Continuous dc) IGT 2.0 7.0 30 mA
(VD = 12 V, RL = 100 Ω)
Gate Trigger Voltage (Continuous dc) VGT — 0.65 1.5 Volts
(VD = 12 V, RL = 100 Ω)
Gate Non–Trigger Voltage VGD 0.2 0.40 — Volts
(VD = 12 Vdc, RL = 100 Ω, TJ = 125°C)
Holding Current IH 3.0 15 50 mA
(VD = 12 V, Initiating Current = 200 mA, Gate Open)
Latching Current IL — — 60 mA
(VD = 12 Vdc, IG = 150 mA)
Gate Controlled Turn-On Time(3) tgt — 1.0 — µs
(VD = Rated VDRM, IG = 150 mA)
(ITM = 50 A Peak)

DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage dv/dt 10 — — V/µs
(VD = Rated VDRM, Gate Open, Exponential Waveform, TJ = 125°C)
Critical Rate-of-Rise of On-State Current di/dt — — 100 A/µs
IG = 150 mA TJ = 125°C
(1) Pulse duration p 300 µs, duty cycle p 2%.
(2) Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various durations of an exponentially decaying current waveform. tw is defined
as 5 time constants of an exponentially decaying current pulse.
(3) The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance.

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560
 MCR69–2, MCR69–3

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –
I TM, PEAK DISCHARGE CURRENT (AMPS)

1000
NORMALIZED PEAK CURRENT

1.0
300
200 0.8

0.6
100
ITM
0.4
50
tw 0.2
tw = 5 time constants
20 0
0.5 1.0 2.0 5.0 10 20 50 25 50 75 100 125
tw, PULSE CURRENT DURATION (ms) TC, CASE TEMPERATURE (°C)

Figure 1. Peak Capacitor Discharge Current Figure 2. Peak Capacitor Discharge Current
Derating
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C)

P(AV) , AVERAGE POWER DISSIPATION (WATTS)

125 32
120
Half Wave
115
24
110
dc
105
dc
100 16

95
90
Half Wave 8.0
85 TJ = 125°C
80
75 0
4.0 8.0 12 16 20 0 4.0 8.0 12 16 20
IT(AV), AVERAGE ON-STATE CURRENT (AMPS) IT(AV), AVERAGE ON-STATE CURRENT (AMPS)

Figure 3. Current Derating Figure 4. Maximum Power Dissipation

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561
 MCR69–2, MCR69–3

1
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0.7
0.5
0.3
0.2
ZθJC(t) = RθJC • r(t)
0.1
0.07
0.05
0.03
0.02

0.01
0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1k 2k 3k 5k 10 k
t, TIME (ms)

Figure 5. Thermal Response

10
NORMALIZED GATE TRIGGER CURRENT

NORMALIZED GATE TRIGGER VOLTAGE

1.4
5.0
VD = 12 Volts
3.0 RL = 100 Ω 1.2
VD = 12 Volts
2.0 RL = 100 Ω

1.0 1.0

0.5
0.8
0.3
0.2

0.5
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Gate Trigger Current Figure 7. Gate Trigger Voltage

3.0

2.0
NORMALIZED HOLD CURRENT

VD = 12 Volts
ITM = 100 mA

1.0
0.8

0.5

0.3
–60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)

Figure 8. Holding Current

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562
MCR72-3, MCR72-6,
MCR72-8
Preferred Device

Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
http://onsemi.com
Designed for industrial and consumer applications such as
temperature, light and speed control; process and remote controls; SCRs
warning systems; capacitive discharge circuits and MPU interface.
• Center Gate Geometry for Uniform Current Density 8 AMPERES RMS
• All Diffused and Glass-Passivated Junctions for Parameter 100 thru 600 VOLTS
Uniformity and Stability
• Small, Rugged Thermowatt Construction for Low Thermal G
Resistance, High Heat Dissipation and Durability A K
• Low Trigger Currents, 200 µA Maximum for Direct Driving from
Integrated Circuits
• Device Marking: Logo, Device Type, e.g., MCR72–3, Date Code
4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
*
(TJ = 40 to 110°C, Sine Wave, VRRM
50 to 60 Hz, Gate Open) MCR72–3 100 1
MCR72–6 400 2
3
MCR72–8 600
On-State RMS Current IT(RMS) 8.0 Amps TO–220AB
(180° Conduction Angles; TC = 83°C) CASE 221A
STYLE 3
Peak Non-Repetitive Surge Current ITSM 100 Amps
(1/2 Cycle, 60 Hz, TJ = 110°C)
PIN ASSIGNMENT
Circuit Fusing Considerations I2t 40 A2s 1 Cathode
(t = 8.3 ms)
"5.0
2 Anode
Forward Peak Gate Voltage VGM Volts
3 Gate
(t ≤ 10 µs, TC = 83°C)
4 Anode
Forward Peak Gate Current IGM 1.0 Amp
(t ≤ 10 µs, TC = 83°C)
Forward Peak Gate Power PGM 5.0 Watts ORDERING INFORMATION
(t ≤ 10 µs, TC = 83°C)
Device Package Shipping
Average Gate Power PG(AV) 0.75 Watt
(t = 8.3 ms, TC = 83°C) MCR72–3 TO220AB 500/Box
Operating Junction Temperature Range TJ – 40 to °C MCR72–6 TO220AB 500/Box
+110
MCR72–8 TO220AB 500/Box
Storage Temperature Range Tstg – 40 to °C
+150
Preferred devices are recommended choices for future use
Mounting Torque — 8.0 in. lb. and best overall value.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.

 Semiconductor Components Industries, LLC, 1999 563 Publication Order Number:

February, 2000 – Rev. 2 MCR72/D
 MCR72–3, MCR72–6, MCR72–8

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 2.2 °C/W
Thermal Resistance, Junction to Ambient RθJA 60 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current(1) IDRM, IRRM
(VAK = Rated VDRM or VRRM; RGK = 1 kΩ) TJ = 25°C — — 10 µA
TJ = 110°C — — 500 µA
ON CHARACTERISTICS
Peak Forward On-State Voltage VTM — 1.7 2.0 Volts
(ITM = 16 A Peak, Pulse Width p 1 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc)(2) IGT — 30 200 µA
(VD = 12 V, RL = 100 Ω)
Gate Trigger Voltage (Continuous dc)(2) VGT — 0.5 1.5 Volts
(VD = 12 V, RL = 100 Ω)
Gate Non–Trigger Voltage VGD 0.1 — — Volts
(VD = 12 Vdc, RL = 100 Ω, TJ = 110°C)
Holding Current IH — — 6.0 mA
(VD = 12 V, Initiating Current = 200 mA, Gate Open)
Gate Controlled Turn-On Time tgt — 1.0 — µs
(VD = Rated VDRM, ITM = 16 A, IG = 2 mA)

DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage dv/dt — 10 — V/µs
(VD = Rated VDRM, RGK = 1 kΩ, TJ = 110°C, Exponential Waveform)
(1) Ratings apply for negative gate voltage or R GK = 1 kΩ. Devices shall not have a positive gate voltage concurrently with a negative
voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such
that the voltage applied exceeds the rated blocking voltage.
(2) RGK current not included in measurement.

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564
 MCR72–3, MCR72–6, MCR72–8

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –

PAV , AVERAGE POWER DISSIPATION (WATTS)

110 16
T C , MAXIMUM CASE TEMPERATURE ( °C)

dc
100 12
α α 180°

α = 30° α = Conduction Angle α = Conduction Angle 90°

90 8.0
60°
90° α = 30° 60°

180°
80 4.0
dc

70 0
0 2.0 4.0 6.0 8.0 0 2.0 4.0 6.0 8.0
IT(AV), AVERAGE ON-STATE CURRENT (AMP) IT(AV), AVERAGE ON-STATE CURRENT (AMP)

Figure 1. Average Current Derating Figure 2. On–State Power Dissipation

3.0
VGT , GATE TRIGGER VOLTAGE (VOLTS)

0.7
2.0
NORMALIZED GATE CURRENT

VD = 12 Vdc 0.6
VD = 12 Vdc
0.5
1.0
0.4

0.3

0.5 0.2

0.1
0.3
–40 –20 0 20 40 60 80 90 100 120 140 –60 –40 –20 0 20 40 60 80 100 120
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Normalized Gate Current Figure 4. Gate Voltage

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565
MCR100 Series
Preferred Device

Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for high volume, line-powered consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits. http://onsemi.com
Supplied in an inexpensive plastic TO-226AA package which is
readily adaptable for use in automatic insertion equipment.
SCRs
• Sensitive Gate Allows Triggering by Microcontrollers and Other
Logic Circuits 0.8 AMPERES RMS
• Blocking Voltage to 600 Volts 100 thru 600 VOLTS
• On–State Current Rating of 0.8 Amperes RMS at 80°C
• High Surge Current Capability — 10 Amperes
• Minimum and Maximum Values of IGT, VGT and IH Specified for G
Ease of Design
A K
• Immunity to dV/dt — 20 V/µsec Minimum at 110°C
• Glass-Passivated Surface for Reliability and Uniformity
• Device Marking: Device Type, e.g., MCR100–3, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1)
*
VDRM, Volts
(TJ = 40 to 110°C, Sine Wave, 50 to VRRM
60 Hz; Gate Open) MCR100–3 100
MCR100–4 200 1
2
MCR100–6 400 3
MCR100–8 600
On-State RMS Current IT(RMS) 0.8 Amp TO–92 (TO–226AA)
(TC = 80°C) 180° Conduction Angles CASE 029
STYLE 10
Peak Non-Repetitive Surge Current ITSM 10 Amps
(1/2 Cycle, Sine Wave, 60 Hz,
TJ = 25°C) PIN ASSIGNMENT
Circuit Fusing Consideration (t = 8.3 ms) I2t 0.415 A2s 1 Cathode

Forward Peak Gate Power PGM 0.1 Watt 2 Gate

(TA = 25°C, Pulse Width v 1.0 µs) 3 Anode
Forward Average Gate Power PG(AV) 0.10 Watt
(TA = 25°C, t = 8.3 ms)
Forward Peak Gate Current IGM 1.0 Amp ORDERING INFORMATION
(TA = 25°C, Pulse Width v
1.0 µs) See detailed ordering and shipping information in the package
dimensions section on page 571 of this data sheet.
Reverse Peak Gate Voltage VGRM 5.0 Volts
(TA = 25°C, Pulse Width v
1.0 µs)
Preferred devices are recommended choices for future use
Operating Junction Temperature Range TJ –40 to °C and best overall value.
@ Rate VRRM and VDRM 110
Storage Temperature Range Tstg –40 to °C
150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.

 Semiconductor Components Industries, LLC, 2000 566 Publication Order Number:

May, 2000 – Rev. 4 MCR100/D
 MCR100 Series

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance — Junction to Case RθJC 75 °C/W
— Junction to Ambient RθJA 200
Lead Solder Temperature TL 260 °C
t
( 1/16″ from case, 10 secs max)

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current(1) TC = 25°C IDRM, IRRM — — 10 µA
(VD = Rated VDRM and VRRM; RGK = 1 kΩ) TC = 110°C — — 100
ON CHARACTERISTICS
Peak Forward On–State Voltage(*) VTM — — 1.7 Volts
(ITM = 1.0 Amp Peak @ TA = 25°C)
Gate Trigger Current (Continuous dc)(2) TC = 25°C IGT — 40 200 µA
(VAK = 7.0 Vdc, RL = 100 Ohms)
Holding Current (2) TC = 25°C IH — 0.5 5.0 mA
(VAK = 7.0 Vdc, Initiating Current = 20 mA) TC = –40°C — — 10
Latch Current TC = 25°C IL — 0.6 10 mA
(VAK = 7.0 V, Ig = 200 µA) TC = –40°C — — 15
Gate Trigger Voltage (Continuous dc)(2) TC = 25°C VGT — 0.62 0.8 Volts
(VAK = 7.0 Vdc, RL = 100 Ohms) TC = –40°C — — 1.2

DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage dV/dt 20 35 — V/µs
(VD = Rated VDRM, Exponential Waveform, RGK = 1000 Ohms,
TJ = 110°C)
Critical Rate of Rise of On–State Current di/dt — — 50 A/µs
(IPK = 20 A; Pw = 10 µsec; diG/dt = 1 A/µsec, Igt = 20 mA)
*Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%.
(1) RGK = 1000 Ohms included in measurement.
(2) Does not include RGK in measurement.

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567
 MCR100 Series

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak on State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –

100 1.0
90 0.9
GATE TRIGGER VOLTAGE (VOLTS)
GATE TRIGGER CURRENT ( m A)

80
0.8
70
0.7
60
0.6
50
0.5
40
30 0.4

20 0.3
10 0.2
–40 –25 –10 5 20 35 50 65 80 95 110 –40 –25 –10 5 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 1. Typical Gate Trigger Current versus Figure 2. Typical Gate Trigger Voltage versus
Junction Temperature Junction Temperature

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568
 MCR100 Series

1000 1000

LATCHING CURRENT ( m A)
HOLDING CURRENT (m A)

100 100

10 10
–40 –25 –10 5 20 35 50 65 80 95 110 –40 –25 –10 5 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical Holding Current versus Figure 4. Typical Latching Current versus
Junction Temperature Junction Temperature
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C)

I T, INSTANTANEOUS ON–STATE CURRENT (AMPS)

120 10
MAXIMUM @ TJ = 25°C
110
MAXIMUM @ TJ = 110°C
100

90
DC
80 1

70 180°
60

50
30° 60° 90° 120°
40 0.1
0 0.1 0.2 0.3 0.4 0.5 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5
IT(RMS), RMS ON-STATE CURRENT (AMPS) VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

Figure 5. Typical RMS Current Derating Figure 6. Typical On–State Characteristics

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569
 MCR100 Series

TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL

H2A H2A
H2B H2B

W2
H4 H5
T1
L1
H1
W1 W
L T

F1 T2
F2
P2 P2 D

P1
P

Figure 7. Device Positioning on Tape

Specification
Inches Millimeter
Symbol Item Min Max Min Max
D Tape Feedhole Diameter 0.1496 0.1653 3.8 4.2
D2 Component Lead Thickness Dimension 0.015 0.020 0.38 0.51
F1, F2 Component Lead Pitch 0.0945 0.110 2.4 2.8
H Bottom of Component to Seating Plane .059 .156 1.5 4.0
H1 Feedhole Location 0.3346 0.3741 8.5 9.5
H2A Deflection Left or Right 0 0.039 0 1.0
H2B Deflection Front or Rear 0 0.051 0 1.0
H4 Feedhole to Bottom of Component 0.7086 0.768 18 19.5
H5 Feedhole to Seating Plane 0.610 0.649 15.5 16.5
L Defective Unit Clipped Dimension 0.3346 0.433 8.5 11
L1 Lead Wire Enclosure 0.09842 — 2.5 —
P Feedhole Pitch 0.4921 0.5079 12.5 12.9
P1 Feedhole Center to Center Lead 0.2342 0.2658 5.95 6.75
P2 First Lead Spacing Dimension 0.1397 0.1556 3.55 3.95
T Adhesive Tape Thickness 0.06 0.08 0.15 0.20
T1 Overall Taped Package Thickness — 0.0567 — 1.44
T2 Carrier Strip Thickness 0.014 0.027 0.35 0.65
W Carrier Strip Width 0.6889 0.7481 17.5 19
W1 Adhesive Tape Width 0.2165 0.2841 5.5 6.3
W2 Adhesive Tape Position .0059 0.01968 .15 0.5
NOTES:
1. Maximum alignment deviation between leads not to be greater than 0.2 mm.
2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.
3. Component lead to tape adhesion must meet the pull test requirements.
4. Maximum non–cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.
5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.
6. No more than 1 consecutive missing component is permitted.
7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.
8. Splices will not interfere with the sprocket feed holes.

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570
 MCR100 Series

ORDERING & SHIPPING INFORMATION: MCR100 Series packaging options, Device Suffix
Europe
U.S. Equivalent Shipping Description of TO92 Tape Orientation
MCR100–3,4,6,8 Bulk in Box (5K/Box) N/A, Bulk
MCR100–6RLRA MCR100–3RL,6RL,8RL Radial Tape and Reel (2K/Reel) Round side of TO92 and adhesive tape visible
MCR100–6RLRM MCR100–6ZL1 Radial Tape and Fan Fold Box Flat side of TO92 and adhesive tape visible
(2K/Box)

http://onsemi.com
571
MCR106-6, MCR106-8
Preferred Device

Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for high volume consumer applications
such as temperature, light and speed control; process and remote control,
and warning systems where reliability of operation is important. http://onsemi.com
• Glass-Passivated Surface for Reliability and Uniformity
• Power Rated at Economical Prices SCRs
• Practical Level Triggering and Holding Characteristics 4 AMPERES RMS
• Flat, Rugged, Thermopad Construction for Low Thermal
Resistance, High Heat Dissipation and Durability 400 thru 600 VOLTS
• Device Marking: Device Type, e.g., MCR106–6, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) G
Rating Symbol Value Unit A K

Peak Repetitive Off–State Voltage(1) VDRM, Volts

(TJ = –40 to 110°C, Sine Wave 50 to VRRM
60 Hz, Gate Open) MCR106–6 400
MCR106–8 600
On-State RMS Current (TC = 93°C) IT(RMS) 4.0 Amps
(180° Conduction Angles)
Average On–State Current IT(AV) 2.55 Amps
(180° Conduction Angles; TC = 93°C)
Peak Non-repetitive Surge Current ITSM 25 Amps 3
2 1
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 110°C)
TO–225AA
Circuit Fusing Considerations I2t 2.6 A2s (formerly TO–126)
(t = 8.3 ms) CASE 077
Forward Peak Gate Power PGM 0.5 Watt STYLE 2
(TC = 93°C, Pulse Width v 1.0 µs)
PIN ASSIGNMENT
Forward Average Gate Power PG(AV) 0.1 Watt
(TC = 93°C, t = 8.3 ms) 1 Cathode

Forward Peak Gate Current IGM 0.2 Amp 2 Anode

(TC = 93°C, Pulse Width v 1.0 µs) 3 Gate
Peak Reverse Gate Voltage VRGM 6.0 Volts
(TC = 93°C, Pulse Width v 1.0 µs)
ORDERING INFORMATION
Operating Junction Temperature Range TJ –40 to °C
+110 Device Package Shipping
Storage Temperature Range Tstg –40 to °C MCR106–6 TO225AA 500/Box
+150
MCR106–8 TO225AA 500/Box
Mounting Torque(2) — 6.0 in. lb.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
Preferred devices are recommended choices for future use
apply for zero or negative gate voltage; however, positive gate voltage shall
and best overall value.
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) Torque rating applies with use of compression washer (B52200-F006 or
equivalent). Mounting torque in excess of 6 in. lb. does not appreciably lower
case-to-sink thermal resistance. Anode lead and heatsink contact pad are
common. (See AN209B). For soldering purposes (either terminal connection
or device mounting), soldering temperatures shall not exceed +200°C. For
optimum results, an activated flux (oxide removing) is recommended.

 Semiconductor Components Industries, LLC, 2000 572 Publication Order Number:

May, 2000 – Rev. 3 MCR106/D
 MCR106–6, MCR106–8

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 3.0 °C/W
Thermal Resistance, Junction to Ambient RθJA 75 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current IDRM, IRRM
(VAK = Rated VDRM or VRRM; RGK = 1000 Ohms) TJ = 25°C — — 10 µA
TJ = 110°C — — 200 µA
ON CHARACTERISTICS
Peak Forward On–State Voltage(1) VTM — — 2.0 Volts
(ITM = 4 A Peak)
Gate Trigger Current (Continuous dc)(2) IGT µA
(VAK = 7 Vdc, RL = 100 Ohms) — — 200
(TC = –40°C) — — 500
Gate Trigger Voltage (Continuous dc)(2) VGT — — 1.0 Volts
(VAK = 7 Vdc, RL = 100 Ohms)
Gate Non-Trigger Voltage(2) VGD 0.2 — — Volts
(VAK = 12 Vdc, RL = 100 Ohms, TJ = 110°C)
Holding Current IH — — 5.0 mA
(VAK = 7 Vdc, Initiating Current = 200 mA, Gate Open)

DYNAMIC CHARACTERISTICS
Critical Rate–of–Rise of Off–State Voltage dv/dt — 10 — V/µs
(TJ = 110°C)
(1) Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%.
(2) RGK current is not included in measurement.

http://onsemi.com
573
 MCR106–6, MCR106–8

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –

CURRENT DERATING
TA , MAXIMUM ALLOWABLE AMBIENTTEMPERATURE ( °C)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C)

110 110

106
90
102
0 α π
98 f = 60 Hz 0 α π
70
f = 60 Hz
94

90 50
α = 30° 60° 90° 120° 180° dc
86
α = 30° 60° 90° 180° dc
82 30
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
IT(AV), AVERAGE FORWARD CURRENT (AMP) IT(AV), AVERAGE FORWARD CURRENT (AMP)

Figure 1. Maximum Case Temperature Figure 2. Maximum Ambient Temperature

http://onsemi.com
574
MCR218-2, MCR218-4,
MCR218-6
Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever http://onsemi.com
half-wave silicon gate-controlled, solid-state devices are needed.
• Glass-Passivated Junctions SCRs
• Blocking Voltage to 400 Volts 8 AMPERES RMS
• TO-220 Construction — Low Thermal Resistance, High Heat 50 thru 400 VOLTS
Dissipation and Durability
• Device Marking: Logo, Device Type, e.g., MCR218–2, Date Code G
A K
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
*
(TJ = 40 to 125°C, Gate Open) VRRM
4
MCR218–2 50
MCR218–4 200
MCR218–6 400
On-State RMS Current IT(RMS) 8.0 A
(180° Conduction Angles; TC = 70°C)
Peak Non-repetitive Surge Current ITSM 100 A 1
(1/2 Cycle, Sine Wave 60 Hz, 2
3
TJ = 125°C)
TO–220AB
Circuit Fusing Considerations I2t 26 A2s
CASE 221A
(t = 8.3 ms) STYLE 3
Forward Peak Gate Power PGM 5.0 Watts
(Pulse Width ≤ 1.0 µs, TC = 70°C) PIN ASSIGNMENT
Forward Average Gate Power PG(AV) 0.5 Watts 1 Cathode
(t = 8.3 ms, TC = 70°C)
2 Anode
Forward Peak Gate Current IGM 2.0 A 3 Gate
(Pulse Width ≤ 1.0 µs, TC = 70°C)
4 Anode
Operating Junction Temperature Range TJ – 40 to °C
+125
Storage Temperature Range Tstg – 40 to °C ORDERING INFORMATION
+150
Device Package Shipping
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall MCR218–2 TO220AB 500/Box
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the MCR218–4 TO220AB 500/Box
voltage ratings of the devices are exceeded.
MCR218–6 TO220AB 500/Box

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 1999 575 Publication Order Number:

March, 2000 – Rev. 2 MCR218/D
 MCR218–2, MCR218–4, MCR218–6

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 2.0 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current IDRM, IRRM
(VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C — — 10 µA
TJ = 125°C — — 2.0 mA
ON CHARACTERISTICS
Peak Forward On-State Voltage(1) VTM — 1.5 1.8 Volts
(ITM = 16 A Peak)
Gate Trigger Current (Continuous dc) IGT — 10 25 mA
(VD = 12 V, RL = 100 Ohms)
Gate Trigger Voltage (Continuous dc) VGT — — 1.5 Volts
(VD = 12 V, RL = 100 Ohms)
Gate Non–Trigger Voltage VGD 0.2 — — Volts
(Rated 12 V, RL = 100 Ohms, TJ = 125°C)
Holding Current IH — 16 30 mA
(VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)

DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage dv/dt — 100 — V/µs
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
(1) Pulse Test: Pulse Width = 1.0 ms, Duty Cycle ≤ 2%.

http://onsemi.com
576
 MCR218–2, MCR218–4, MCR218–6

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –

125 15
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C)

P(AV), AVERAGE ON-STATE POWER DISSIPATION

115 12
α α

α = CONDUCTION ANGLE α = Conduction Angle dc

105 9.0
120° 180°
(WATTS)

60° 90°
95 6.0
α = 30°
dc
85 3.0

α = 30° 60° 90° 120° 180°

75 0
0 1 2 3 4 5 6 7 8 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) IT(AV), AVG. ON-STATE CURRENT (AMPS)

Figure 1. Current Derating Figure 2. On–State Power Dissipation

http://onsemi.com
577
 MCR218–2, MCR218–4, MCR218–6

3.0 1.3
I GT , NORMALIZED GATE TRIGGER CURRENT (mA)

V GT , NORMALIZED GATE TRIGGER VOLTAGE

2.0 1.2
VD = 12 Vdc
1.5
VD = 12 Vdc
1.0 1.0
0.9 0.9

0.7 0.7

0.5 0.5
0.4 0.4

0.3 0.3
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical Gate Trigger Current Figure 4. Typical Gate Trigger Voltage
versus Temperature versus Temperature

4.0
I H , NORMALIZED HOLDING CURRENT (mA)

3.0

2.0
VD = 12 Vdc
1.5

1.0
0.9
0.7

0.5
0.4
–60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)

Figure 5. Typical Holding Current versus

Temperature

http://onsemi.com
578
MCR218-6FP, MCR218-10FP
Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
• Glass Passivated Junctions with Center Gate Fire for Greater http://onsemi.com
Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Constructed for Low Thermal ISOLATED SCRs ( )
Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 800 Volts 8 AMPERES RMS
• 80 A Surge Current Capability 400 thru 800 VOLTS
• Insulated Package Simplifies Mounting
• Indicates UL Registered — File #E69369
• Device Marking: Logo, Device Type, e.g., MCR218–6, Date Code G
A K

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to +125°C, Sine Wave 50 to VRRM
60 Hz, Gate Open)
MCR218–6FP 400
MCR218–10FP 800
On-State RMS Current (TC = +70°C)(2) IT(RMS) 8.0 Amps
(180° Conduction Angles)
Peak Nonrepetitive Surge Current ITSM 100 Amps 1
(1/2 Cycle, Sine Wave 60 Hz, 2
TJ = 125°C) 3

Circuit Fusing (t = 8.3 ms) I2t 26 A2s ISOLATED TO–220 Full Pack
CASE 221C
Forward Peak Gate Power PGM 5.0 Watts
v 1.0 µs)
STYLE 2
(TC = +70°C, Pulse Width
Forward Average Gate Power PG(AV) 0.5 Watt PIN ASSIGNMENT
(TC = +70°C, t = 8.3 ms) 1 Cathode
Forward Peak Gate Current IGM 2.0 Amps
(TC = +70°C, Pulse Width v 1.0 µs) 2
3
Anode
Gate
RMS Isolation Voltage (TA = 25°C, V(ISO) 1500 Volts
Relative Humidity p
20%) ( )
Operating Junction Temperature TJ –40 to °C ORDERING INFORMATION
+125
Device Package Shipping
Storage Temperature Range Tstg –40 to °C
MCR218–6FP ISOLATED TO220FP 500/Box
+150
MCR218–10FP ISOLATED TO220FP 500/Box
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking Preferred devices are recommended choices for future use
voltages shall not be tested with a constant current source such that the and best overall value.
voltage ratings of the devices are exceeded.
(2) The case temperature reference point for all TC measurements is a point on
the center lead of the package as close as possible to the plastic body.

 Semiconductor Components Industries, LLC, 1999 579 Publication Order Number:

February, 2000 – Rev. 2 MCR218FP/D
 MCR218–6FP, MCR218–10FP

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 2 °C/W
Thermal Resistance, Case to Sink RθCS 2.2 (typ) °C/W
Thermal Resistance, Junction to Ambient RθJA 60 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current IDRM,
(VD = Rated VDRM, Gate Open) TJ = 25°C IRRM — — 10 µA
TJ = 125°C — — 2 mA
ON CHARACTERISTICS
Peak Forward On–State Voltage(1) VTM — 1 1.8 Volts
(ITM = 16 A Peak)
Gate Trigger Current (Continuous dc) IGT — 10 25 mA
(VAK = 12 Vdc, RL = 100 Ohms)
Gate Trigger Voltage (Continuous dc) VGT — — 1.5 Volts
(VAK = 12 Vdc, RL = 100 Ohms)
Gate Non-Trigger Voltage VGD 0.2 — — Volts
(VAK = 12 Vdc, RL = 100 Ohms, TJ = 125°C)
Holding Current IH — 16 30 mA
(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open)
Turn-On Time tgt — 1.5 — µs
(ITM = 8 A, IGT = 40 mAdc)
Turn-Off Time (VD = Rated VDRM, tq µs
ITM = 8 A, IR = 8 A) TJ = 25°C — 15 —
TJ = 125°C — 35 —

DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage dv/dt — 100 — V/µs
(Gate Open, VD = Rated VDRM, Exponential Waveform)
(1) Pulse Test: Pulse Width = 1 ms, Duty Cycle p 2%.

http://onsemi.com
580
 MCR218–6FP, MCR218–10FP

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak on State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C)

P(AV) , AVERAGE ON-STATE POWER DISSIPATION

125 15

115 12 a
a
α = CONDUCTION ANGLE α = CONDUCTION ANGLE dc
105 9
(WATTS)

120° 180°

60° 90°
95 6
α = 30°
dc
85 3

α = 30° 60° 90° 120° 180°

75 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) IT(AV), AVG. ON-STATE CURRENT (AMPS)

Figure 1. Current Derating Figure 2. On-State Power Dissipation

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581
 MCR218–6FP, MCR218–10FP

100

70
TJ = 25°C
50
125°C
30

20
i F , INSTANTANEOUS ON-STATE FORWARD CURRENT (AMP)

10

80
1 CYCLE

I TSM , PEAK SURGE CURRENT (AMP)

1
75
0.7

0.5 70

0.3
65
TC = 85°C
0.2
f = 60 Hz
60
SURGE IS PRECEDED AND
0.1 FOLLOWED BY RATED CURRENT
0.4 1.2 2 2.8 3.6 4.4 5.2 6 55
1 2 3 4 6 8 10
v F, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
NUMBER OF CYCLES

Figure 3. Maximum On-State Characteristics Figure 4. Maximum Non-Repetitive Surge Current

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1
0.7
0.5
0.3
0.2 ZθJC(t) = RθJC • r(t)

0.1
0.07
0.05
0.03
0.02

0.01
0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k
t, TIME (ms)

Figure 5. Thermal Response

http://onsemi.com
582
 MCR218–6FP, MCR218–10FP

I GT, GATE TRIGGER CURRENT (NORMALIZED)

VGT , GATE TRIGGER VOLTAGE (NORMALIZED)

2 2
VD = 12 V VD = 12 V
1.6 1.6

1.2 1.2

0.8 0.8

0.4 0.4

0 0
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Typical Gate Trigger Current versus Figure 7. Typical Gate Trigger Voltage versus
Temperature Temperature

2
IH , HOLDING CURRENT (NORMALIZED)

VD = 12 V
1.6

1.2

0.8

0.4

0
–60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)

Figure 8. Typical Holding Current versus Temperature

http://onsemi.com
583
MCR225-8FP, MCR225-10FP
Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
• Glass Passivated Junctions with Center Gate Fire for Greater Parameter http://onsemi.com
Uniformity and Stability
• Small, Rugged, Thermowatt Constructed for Low Thermal ISOLATED SCRs ( )
Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 800 Volts 25 AMPERES RMS
• 300 A Surge Current Capability 600 thru 800 VOLTS
• Insulated Package Simplifies Mounting
• Indicates UL Registered — File #E69369
• Device Marking: Logo, Device Type, e.g., MCR225–8FP, Date Code G
A K

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to +125°C, Sine Wave, VRRM
50 to 60 Hz, Gate Open)
MCR225–8FP 600
MCR225–10FP 800
On-State RMS Current (TC = +70°C) IT(RMS) 25 Amps
(180° Conduction Angles)
Peak Non–repetitive Surge Current ITSM 300 Amps
(1/2 Cycle, Sine Wave 60 Hz, 1
TC = +70°C) 2
3
Circuit Fusing (t = 8.3 ms) I2t 375 A2s
ISOLATED TO–220 Full Pack
Forward Peak Gate Power PGM 20 Watts CASE 221C
(TC = +70°C, Pulse Width v 1.0 µs) STYLE 2

Forward Average Gate Power PG(AV) 0.5 Watt

(TC = +70°C, t = 8.3 ms) PIN ASSIGNMENT
1 Cathode
Forward Peak Gate Current IGM 2.0 Amps
(TC = +70°C, Pulse Width v 1.0 µs) 2 Anode
RMS Isolation Voltage (TA = 25°C, V(ISO) 1500 Volts 3 Gate
Relative Humidity p
20%) ( )
Operating Junction Temperature Range TJ –40 to °C
ORDERING INFORMATION
+125
Storage Temperature Range Tstg –40 to °C Device Package Shipping
+150 MCR225–8FP ISOLATED TO220FP 500/Box
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings MCR225–10FP ISOLATED TO220FP 500/Box
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the Preferred devices are recommended choices for future use
voltage ratings of the devices are exceeded. and best overall value.

 Semiconductor Components Industries, LLC, 1999 584 Publication Order Number:

February, 2000 – Rev. 2 MCR225FP/D
 MCR225–8FP, MCR225–10FP

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 1.5 °C/W
Thermal Resistance, Case to Sink RθCS 2.2 (typ) °C/W
Thermal Resistance, Junction to Ambient RθJA 60 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current IDRM,
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C IRRM — — 10 µA
TJ = 125°C — — 2 mA
ON CHARACTERISTICS
Peak Forward On–State Voltage(1) VTM — — 1.8 Volts
(ITM = 50 A)
Gate Trigger Current (Continuous dc) IGT — — 40 mA
(VAK = 12 Vdc, RL = 100 Ohms)
Gate Trigger Voltage (Continuous dc) VGT — 0.8 1.5 Volts
(VAK = 12 Vdc, RL = 100 Ohms)
Gate Non-Trigger Voltage VGD 0.2 — — Volts
(VAK = 12 Vdc, RL = 100 Ohms, TJ = 125°C)
Holding Current IH — 20 40 mA
(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open)
Turn-On Time tgt — 1.5 — µs
(ITM = 25 A, IGT = 40 mAdc)
Turn-Off Time (VDRM = Rated Voltage) tq µs
(ITM = 25 A, IR = 25 A) — 15 —
(ITM = 25 A, IR = 25 A, TJ = 125°C) — 35 —

DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage dv/dt — 100 — V/µs
(Gate Open, VD = Rated VDRM, Exponential Waveform)
(1) Pulse Test: Pulse Width = 1.0 ms, Duty Cycle ≤ 2%.

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585
 MCR225–8FP, MCR225–10FP

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak on State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –

TYPICAL CHARACTERISTICS

130 32
TC, MAXIMUM CASE TEMPERATURE (° C)

P(AV) , AVERAGE POWER (WATTS)

180° dc
120 α
α 24
α = CONDUCTION ANGLE α = CONDUCTION ANGLE 60°
90°
110
α = 30°
16
100
TJ = 125°C
α = 30° 60° 90° 180° dc 8
90

80 0
0 4 8 12 16 20 0 4 8 12 16 20
IT(AV), ON-STATE FORWARD CURRENT (AMPS) IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)

Figure 1. Average Current Derating Figure 2. Maximum On–State Power Dissipation

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586
 MCR225–8FP, MCR225–10FP

100

70

50

30
125°C
20
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)

25°C
10

2
300
1 CYCLE

I TSM , PEAK SURGE CURRENT (AMP)

1 275

0.7
250
0.5

0.3 225
TC = 85°C
0.2 f = 60 Hz
200
SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT
0.1 175
0 0.4 0.8 1.2 1.6 2 2.4 2.8 1 2 3 4 6 8 10
vF, INSTANTANEOUS VOLTAGE (VOLTS) NUMBER OF CYCLES

Figure 3. Maximum Forward Voltage Figure 4. Maximum Non-Repetitive Surge Current

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1
0.7
0.5
0.3
0.2
ZθJC(t) = RθJC • r(t)

0.1
0.07
0.05
0.03
0.02

0.01
0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k
t, TIME (ms)

Figure 5. Thermal Response

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587
 MCR225–8FP, MCR225–10FP

VGT , GATE TRIGGER VOLTAGE (NORMALIZED)

I GT, GATE TRIGGER CURRENT (NORMALIZED)
2 2
VD = 12 V VD = 12 V
1.6 1.6

1.2 1.2

0.8 0.8

0.4 0.4

0 0
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Gate Trigger Current Figure 7. Typical Gate Trigger Voltage
versus Temperature versus Temperature

2
IH , HOLDING CURRENT (NORMALIZED)

VD = 12 V
1.6

1.2

0.8

0.4

0
–60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Typical Holding Current
versus Temperature

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588
MCR264-4, MCR264-6,
MCR264-8
Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors
Designed for back-to-back SCR output devices for solid state relays
or applications requiring high surge operation. http://onsemi.com
• Photo Glass Passivated Blocking Junctions for High Temperature
Stability, Center Gate for Uniform Parameters SCRs
• 400 Amperes Surge Capability 40 AMPERES RMS
• Blocking Voltage to 600 Volts 200 thru 600 VOLTS
• Device Marking: Logo, Device Type, e.g., MCR264–4, Date Code
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) A K
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
*
(TJ = 40 to 125°C, Sine Wave 50 to VRRM
60 Hz; Gate Open)
MCR264–4 200 4
MCR264–6 400
MCR264–8 600
On-State RMS Current IT(RMS) 40 A
(TC = 80°C; 180° Conduction Angles)
Average On-State Current IT(AV) 25 A 1
(TC = 80°C; 180° Conduction Angles) 2
3
Peak Non-repetitive Surge Current ITSM A
(TC = 80°C) 400 TO–220AB
(1/2 Cycle, Sine Wave 60 Hz, CASE 221A
TJ = 125°C) 450 STYLE 3

Forward Peak Gate Power PGM 20 Watts

PIN ASSIGNMENT
(Pulse Width ≤ 1.0 µs, TC = 80°C)
1 Cathode
Forward Average Gate Power PG(AV) 0.5 Watt
(t = 8.3 ms, TC = 80°C) 2 Anode
3 Gate
Forward Peak Gate Current IGM 2.0 A
(Pulse Width ≤ 1.0 µs, TC = 80°C) 4 Anode

Operating Junction Temperature Range TJ – 40 to °C

+125
ORDERING INFORMATION
Storage Temperature Range Tstg – 40 to °C
+150 Device Package Shipping
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings MCR264–4 TO220AB 500/Box
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking MCR264–6 TO220AB 500/Box
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded. MCR264–8 TO220AB 500/Box
These devices are rated for use in applications subject to high surge
conditions. Care must be taken to insure proper heat sinking when the device
is to be used at high sustained currents. Preferred devices are recommended choices for future use
and best overall value.

 Semiconductor Components Industries, LLC, 1999 589 Publication Order Number:

February, 2000 – Rev. 2 MCR264–4/D
 MCR264–4, MCR264–6, MCR264–8

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 1.0 °C/W
Thermal Resistance, Junction to Ambient RθJA 60 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current I DRM , I RRM
(VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C — — 10 µA
TJ = 125°C — — 2.0 mA
ON CHARACTERISTICS
Peak Forward On–State Voltage(1) VTM — 1.4 2.0 Volts
(ITM = 80 A)
Gate Trigger Current (Continuous dc) IGT — 15 50 mA
(VAK = 12 Vdc, RL = 100 Ohms, TC = – 40°C) — 30 90
Gate Trigger Voltage (Continuous dc) VGT — 1.0 1.5 Volts
(VAK = 12 Vdc, RL = 100 Ohms)
Gate Non-Trigger Voltage VGD 0.2 — — Volts
(VAK = 12 Vdc, RL = 100 Ohms, TJ = 125°C)
Holding Current IH — 30 60 mA
(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open)
Turn-On Time tgt — 1.5 — µs
(ITM = 40 A, IGT = 60 mAdc)

DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage dv/dt — 50 — V/µs
(Gate Open, VD = Rated VDRM, Exponential Waveform)
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

http://onsemi.com
590
 MCR264–4, MCR264–6, MCR264–8

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –

125 50
TC, MAXIMUM CASE TEMPERATURE ( ° C)

180°
45
115 α P(AV) , AVERAGE POWER (WATTS) 40
α = CONDUCTION ANGLE 90°
35 60°
dc
105 30 α = 30°
25
dc
95 20
15
85 α = 30° 10 α
60° α = CONDUCTIVE ANGLE
5.0
90° 180°
75 0
0 5.0 10 15 20 25 0 5.0 10 15 20 25
IT(AV), ON-STATE FORWARD CURRENT (AMPS) IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)

Figure 1. Average Current Derating Figure 2. Maximum On–State Power Dissipation

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591
 MCR264–4, MCR264–6, MCR264–8

40 1.1

VGT , GATE TRIGGER VOLTAGE (VOLTS)

I GT , GATE TRIGGER CURRENT (mA)

1.0 OFF-STATE VOLTAGE = 12 V

OFF-STATE VOLTAGE = 12 V
20 0.9

0.8

0.7
10
0.6
7.0
0.5
5.0
4.0 0.4
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical Gate Trigger Current Figure 4. Typical Gate Trigger Voltage

IF , INSTANTANEOUS FORWARD CURRENT (AMPS)

70 100

50 OFF-STATE VOLTAGE = 12 V
IH , HOLDING CURRENT (mA)

30 TJ = 25°C

10
20

10

7.0 1.0
–60 –40 –20 0 20 40 60 80 100 120 140 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
TJ, JUNCTION TEMPERATURE (°C) vF, INSTANTANEOUS VOLTAGE (VOLTS)

Figure 5. Typical Holding Current Figure 6. Typical Forward Voltage

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0
0.7
0.5
0.3
0.2
ZθJC(t) = RθJC • r(t)
0.1
0.07
0.05
0.03
0.02

0.01
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1k 2k 3k 5k 10 k
t, TIME (ms)

Figure 7. Thermal Response

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592
MCR265-4 Series
Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors
Designed for inverse parallel SCR output devices for solid state
relays, welders, battery chargers, motor controls or applications
requiring high surge operation.
http://onsemi.com
• Photo Glass Passivated Blocking Junctions for High Temperature
Stability, Center Gate for Uniform Parameters
SCRs
• 550 Amperes Surge Capability
55 AMPERES RMS
• Blocking Voltage to 800 Volts
• Device Marking: Logo, Device Type, e.g., MCR265–4, Date Code 200 thru 800 VOLTS

G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
A K
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = 25 to 125°C, Sine Wave, VRRM
50 to 60 Hz, Gate Open)
MCR265–4 200
4
MCR265–6 400
MCR265–8 600
MCR265–10 800

On-State RMS Current IT(RMS) 55 Amps

(180° Conduction Angles; TC = 70°C)
Average On-State Current IT(AV) 35 Amps 1
(180° Conduction Angles; TC = 70°C) 2
3
Peak Non-Repetitive Surge Current ITSM 550 Amps TO–220AB
(1/2 Cycle, Sine Wave, 60 Hz, CASE 221A
TJ = 70°C) STYLE 3
Forward Peak Gate Power PGM 20 Watts
(Pulse Width ≤ 1.0 µs, TC = 70°C) PIN ASSIGNMENT
Forward Average Gate Power PG(AV) 0.5 Watt 1 Cathode
(t = 8.3 ms, TC = 70°C) 2 Anode
Forward Peak Gate Current IGM 2.0 Amps 3 Gate
(Pulse Width ≤ 1.0 µs, TC = 70°C)
4 Anode
Operating Junction Temperature Range TJ – 40 to °C
+125
Storage Temperature Range Tstg – 40 to °C ORDERING INFORMATION
+150
Device Package Shipping
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall MCR265–4 TO220AB 500/Box
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the MCR265–6 TO220AB 500/Box
voltage ratings of the devices are exceeded.
MCR265–8 TO220AB 500/Box
These devices are rated for use in applications subject to high surge
conditions. Care must be taken to insure proper heat sinking when the device MCR265–10 TO220AB 500/Box
is to be used at high sustained currents.

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 1999 593 Publication Order Number:

February, 2000 – Rev. 2 MCR265/D
 MCR265–4 Series

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 0.9 °C/W
Thermal Resistance, Junction to Ambient RθJA 60 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current IDRM, IRRM
(VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C — — 10 µA
TJ = 125°C — — 2.0 mA
ON CHARACTERISTICS
Peak Forward On–State Voltage(1) VTM — 1.5 1.9 Volts
(ITM = 110 A)
Gate Trigger Current (Continuous dc) IGT mA
(VAK = 12 Vdc, RL = 100 Ohms) — 20 50
(TC = –40°C) — 40 90
Gate Trigger Voltage (Continuous dc) VGT — 1.0 1.5 Volts
(VAK = 12 Vdc, RL = 100 Ohms)
Gate Non-Trigger Voltage VGD 0.2 — — Volts
(VAK = 12 Vdc, RL = 100 Ohms, TJ = 125°C)
Holding Current IH — 30 75 mA
(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open)
Turn-On Time tgt — 1.5 — µs
(ITM = 55 A, IGT = 200 mAdc)

DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage dv/dt — 50 — V/µs
(Gate Open, VD = Rated VDRM, Exponential Waveform)
(1) Pulse Width p 300 µs, Duty Cycle p 2%.

http://onsemi.com
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 MCR265–4 Series

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –

125 60
TC, MAXIMUM CASE TEMPERATURE ( ° C)

121 180°
P(AV) , AVERAGE POWER (WATTS) 54
117 90°
113 α 48 60°
109 α = CONDUCTION ANGLE 42
105 dc
36
101 α = 30°
97 30
93 24 α = 30°
89 dc
85 18
81 12 α
77 60° 90° α = CONDUCTION ANGLE
180° 6.0
73
69 0
0 4.0 8.0 12 16 20 24 28 32 36 40 0 5.0 10 15 20 25 30 35 40
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)*

Figure 1. Average Current Derating Figure 2. Maximum On–State Power

Dissipation

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595
 MCR265–4 Series

2.5 3.0
2.0
VD = 12 Vdc 2.0
NORMALIZED GATE CURRENT

NORMALIZED GATE VOLTAGE

1.5 VD = 12 Vdc
1.5
1.0
1.0
0.7 0.8

0.5
0.4 0.5

0.3
0.25 0.3
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical Gate Trigger Current Figure 4. Typical Gate Trigger Voltage

I TM , INSTANTANEOUS ON-STATE CURRENT (AMPS)

3.0 1000
NORMALIZED HOLDING CURRENT

2.0
VD = 12 Vdc
100

1.0
TJ = 25°C
0.7
10
0.5

0.3 1.0
– 60 – 40 – 20 0 20 40 60 80 100 120 140 0 1.0 2.0 3.0
TJ, JUNCTION TEMPERATURE (°C) VTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

Figure 5. Typical Holding Current Figure 6. Typical On–State Characteristics

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0
0.7
0.5
0.3
0.2
ZθJC(t) = RθJC • r(t)
0.1
0.07
0.05
0.03
0.02

0.01
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1k 2k 3k 5k 10k
t, TIME (ms)

Figure 7. Thermal Response

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596
MCR703A Series
Preferred Device

Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for high volume, low cost consumer
applications such as temperature, light and speed control; process and
remote control; and warning systems where reliability of operation is http://onsemi.com
critical.
• Small Size SCRs
• Passivated Die Surface for Reliability and Uniformity 4.0 AMPERES RMS
• Low Level Triggering and Holding Characteristics
100 thru 600 VOLTS
• Recommend Electrical Replacement for C106
• Surface Mount Package — Case 369A
• Device Marking: Device Type, e.g., for MCR703A: CR703A, G
Date Code A K

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit 4
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TC = –40 to +110°C, Sine Wave, VRRM 1 2
50 to 60 Hz, Gate Open) MCR703A 100 3
MCR704A 200
MCR706A 400
D–PAK
MCR708A 600
CASE 369A
Peak Non-Repetitive Off–State Voltage VRSM Volts STYLE 5
(Sine Wave, 50 to 60 Hz, Gate Open,
TC = –40 to +110°C) MCR703A 150
MCR704A 250 PIN ASSIGNMENT
MCR706A 450 1 Gate
MCR708A 650
2 Anode
On–State RMS Current IT(RMS) 4.0 Amps
(180° Conduction Angles, TC = 90°C) 3 Cathode

Average On–State Current IT(AV) Amps 4 Anode

(180° Conduction Angles)
TC = –40 to +90°C 2.6
TC = +100°C 1.6
ORDERING INFORMATION
Non-Repetitive Surge Current ITSM Amps
(1/2 Sine Wave, 60 Hz, TJ = 110°C) 25 Device Package Shipping
(1/2 Sine Wave, 1.5 ms, TJ = 110°C) 35
MCR703AT4 DPAK 369A 16mm Tape
Circuit Fusing (t = 8.3 ms) I2t 2.6 A2s
and Reel
Forward Peak Gate Power PGM 0.5 Watt (2.5K/Reel)
(Pulse Width ≤ 10 ms, TC = 90°C)
Forward Average Gate Power PG(AV) 0.1 Watt MCR704AT4 DPAK 369A 16mm Tape
(t = 8.3 ms, TC = 90°C) and Reel
(2.5K/Reel)
Forward Peak Gate Current IGM 0.2 Amp
(Pulse Width ≤ 10 ms, TC = 90°C) MCR706AT4 DPAK 369A 16mm Tape
Operating Junction Temperature Range TJ – 40 to °C and Reel
+110 (2.5K/Reel)
Storage Temperature Range Tstg – 40 to °C
+150 MCR708AT4 DPAK 369A 16mm Tape
and Reel
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings (2.5K/Reel)
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded. Preferred devices are recommended choices for future use
and best overall value.

 Semiconductor Components Industries, LLC, 2000 597 Publication Order Number:

May, 2000 – Rev. 4 MCR703A/D
 MCR703A Series

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 8.33 °C/W
Thermal Resistance, Junction to Ambient(1) RθJA 80 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current IDRM, IRRM µA
(VAK = Rated VDRM or VRRM; RGK = 1 KΩ) TC = 25°C — — 10
TC = 110°C — — 200
ON CHARACTERISTICS
Peak Forward “On” Voltage VTM — — 2.2 Volts
(ITM = 8.2 A Peak, Pulse Width = 1 to 2 ms, 2% Duty Cycle)
Gate Trigger Current (Continuous dc)(2) IGT µA
(VAK = 12 Vdc, RL = 24 Ohms) TC = 25°C — 25 75
TC = –40°C — — 300
Gate Trigger Voltage (Continuous dc)(2) TC = 25°C VGT — — 0.8 Volts
(VAK = 12 Vdc, RL = 24 Ohms) TC = –40°C — — 1.0
Gate Non-Trigger Voltage(2) VGD 0.2 — — Volts
(VAK = 12 Vdc, RL = 100 Ohms, TC = 110°C)
Holding Current IH mA
(VAK = 12 Vdc, Gate Open) TC = 25°C — — 5.0
(Initiating Current = 200 mA) TC = –40°C — — 10
Peak Reverse Gate Blocking Voltage VRGM 10 12.5 18 Volts
(IGR = 10 µA)
Peak Reverse Gate Blocking Current IRGM — — 1.2 µA
(VGR = 10 V)
Total Turn-On Time tgt — 2.0 — µs
(Source Voltage = 12 V, RS = 6 k Ohms)
(ITM = 8.2 A, IGT = 2 mA, Rated VDRM)
(Rise Time = 20 ns, Pulse Width = 10 µs)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage dv/dt — 10 — V/µs
(VD = Rated VDRM, RGK = 1 KΩ, Exponential Waveform,
TC = 110°C)
Repetitive Critical Rate of Rise of On–State Current di/dt — — 100 A/µs
(Cf = 60 Hz, IPK = 30 A, PW = 100 µs, diG/dt = 1 A/µs)
(1) Case 369A when surface mounted on minimum pad sizes recommended.
(2) RGK current not included in measurement.

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598
 MCR703A Series

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –

110 5.0

P(AV), AVERAGE POWER DISSIPATION (WATTS)

TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C)

30°C
4.0
30°C 60°C
60°C 90°C
105 90°C
120°C 3.0 120°C
180°C 180°C
DC
2.0 DC
100

1.0

95 0
0 1.0 2.0 3.0 4.0 5.0 0 1.0 2.0 3.0 4.0 5.0
IT(AV), AVERAGE ON–STATE CURRENT (AMPS) IT(AV), AVERAGE ON–STATE CURRENT (AMPS)

Figure 1. Average Current Derating Figure 2. On–State Power Dissipation

IT, INSTANTANEOUS ON–STATE CURRENT (AMPS)

100 1.0
r(t), TRANSIENT RESISTANCE (NORMALIZED)

Typical @ TJ = 25°C

Maximum @ TJ = 110°C
ZqJC(t) = RqJC(t)•r(t)
10

0.1
Maximum @ TJ = 25°C
1.0

0.1 0.01
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.1 1.0 10 100 1000 10,000
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) t, TIME (ms)

Figure 3. On–State Characteristics Figure 4. Transient Thermal Response

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599
 MCR703A Series

35 1.0

VGT, GATE TRIGGER VOLTAGE (VOLTS)

I GT, GATE TRIGGER CURRENT ( m A)

30

25 0.5

20

15 0
–40 –20 0 20 40 60 80 100 110 –40 –20 0 20 40 60 80 100 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 5. Typical Gate Trigger Current versus Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature Junction Temperature

2.0 2.0
IH , HOLDING CURRENT (mA)

IL , LATCHING CURRENT (mA)

1.5 1.5

1.0 1.0

0.5 0.5

0 0
–40 –20 0 20 40 60 80 100 110 –40 –20 0 20 40 60 80 100 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Typical Holding Current versus Figure 8. Typical Latching Current versus
Junction Temperature Junction Temperature

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600
 MCR703A Series

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the interface between the board and the package. With the
total design. The footprint for the semiconductor packages correct pad geometry, the packages will self align when
must be the correct size to insure proper solder connection subjected to a solder reflow process.

0.165 0.118
4.191 3.0
0.100
2.54
0.063
1.6
0.190 0.243
4.826 6.172

inches
mm
DPAK

http://onsemi.com
601
MCR716, MCR718
Preferred Device

Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control, process control, temperature, light http://onsemi.com
and speed control.
• Small Size SCRs
• Passivated Die for Reliability and Uniformity 4.0 AMPERES RMS
• Low Level Triggering and Holding Characteristics 400 thru 600 VOLTS
• Surface Mount Lead Form — Case 369A
• Device Marking: Device Type, e.g., MCR716, Date Code
G
A K
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to +110°C, Sine Wave, VRRM
4
50 to 60 Hz, Gate Open)
MCR716 400
MCR718 600 1 2
3
On–State RMS Current IT(RMS) 4.0 Amps
(180° Conduction Angles; TC = 90°C)
D–PAK
Average On–State Current IT(AV) 2.6 Amps CASE 369A
(180° Conduction Angles; TC = 90°C) STYLE 4
Peak Non-Repetitive Surge Current ITSM 25 Amps
(1/2 Cycle, Sine Wave 60 Hz, PIN ASSIGNMENT
TJ = 110°C)
1 Cathode
Circuit Fusing Consideration I2t 2.6 A2sec 2 Anode
(t = 8.3 msec)
3 Gate
Forward Peak Gate Power PGM 0.5 Watt
(Pulse Width ≤ 10 ms, TC = 90°C) 4 Anode

Forward Average Gate Power PG(AV) 0.1 Watt

(t = 8.3 msec, TC = 90°C) ORDERING INFORMATION
Forward Peak Gate Current IGM 0.2 Amp
Device Package Shipping
(Pulse Width ≤ 10 ms, TC = 90°C)
Operating Junction Temperature Range TJ – 40 to °C MCR716T4 DPAK 369A 16mm Tape
+110 and Reel
(2.5K/Reel)
Storage Temperature Range Tstg – 40 to °C
+150 MCR718T4 DPAK 369A 16mm Tape
and Reel
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
(2.5K/Reel)
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
Preferred devices are recommended choices for future use
ratings of the devices are exceeded.
and best overall value.

 Semiconductor Components Industries, LLC, 2000 602 Publication Order Number:

May, 2000 – Rev. 3 MCR716/D
 MCR716, MCR718

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 3.0 °C/W
Thermal Resistance, Junction to Ambient (Case 369A)(1) RθJA 80 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current; RGK = 1 K (2) W IDRM µA
(VAK = Rated VDRM or VRRM) TC = 25°C IRRM — — 10
TC = 110°C — — 200
ON CHARACTERISTICS
Peak Reverse Gate Blocking Voltage VRGM 10 12.5 18 Volts
(IGR = 10 µA)
Peak Reverse Gate Blocking Current IRGM — — 1.2 µA
(VGR = 10 V)
Peak Forward On–State Voltage(3) VTM Volts
(ITM = 5.0 A Peak) — 1.3 1.5
(ITM = 8.2 A Peak) — 1.5 2.2
Gate Trigger Current (Continuous dc)(4) IGT µA
(VD = 12 Vdc, RL = 30 Ohms) TC = 25°C 1.0 25 75
TC = –40°C — — 300
Gate Trigger Voltage (Continuous dc)(4) VGT Volts
(VD = 12 Vdc, RL = 30 Ohms) TC = 25°C 0.3 0.55 0.8
TC = –40°C — — 1.0
TC = 110°C 0.2 — —
Holding Current(2) IH mA
(VD = 12 Vdc, Initiating Current = 200 mA, Gate Open) TC = 25°C 0.4 1.0 5.0
TC = –40°C — — 10
Latching Current(2) IL mA
(VD = 12 Vdc, IG = 2.0 mA, TC = 25°C) — — 5.0
(VD = 12 Vdc, IG = 2.0 mA, TC = –40°C) — — 10
Total Turn-On Time tgt — 2.0 5.0 µs
W
(Source Voltage = 12 V, RS = 6 K , IT = 8 A(pk), RGK = 1 K ) W
(VD = Rated VDRM, Rise Time = 20 ns, Pulse Width = 10 µs)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage dv/dt 5.0 10 — V/µs
W
(VD = 0.67 x Rated VDRM, RGK = 1 K , Exponential Waveform,
TJ = 110°C)
Repetitive Critical Rate of Rise of On–State Current di/dt — — 100 A/µs
(f = 60 Hz, IPK = 30 A, PW = 100 µs, dIG/dt = 1 A/µs)
(1) Case 369A, when surface mounted on minimum recommended pad size.
W
(2) Ratings apply for negative gate voltage or RGK = 1 K . Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
(3) Pulse Test: Pulse Width ≤ 2 ms, Duty Cycle ≤ 2%.
(4) RGK current not included in measurements.

http://onsemi.com
603
 MCR716, MCR718

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –

110 5.0

P(AV), AVERAGE POWER DISSIPATION (WATTS)

TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C)

30°C
4.0
30°C 60°C
60°C 90°C
105 90°C
120°C 3.0 120°C
180°C 180°C
DC
2.0 DC
100

1.0

95 0
0 1.0 2.0 3.0 4.0 5.0 0 1.0 2.0 3.0 4.0 5.0
IT(AV), AVERAGE ON–STATE CURRENT (AMPS) IT(AV), AVERAGE ON–STATE CURRENT (AMPS)

Figure 1. Average Current Derating Figure 2. On–State Power Dissipation

IT, INSTANTANEOUS ON–STATE CURRENT (AMPS)

100 1.0
r(t), TRANSIENT RESISTANCE (NORMALIZED)

Typical @ TJ = 25°C

Maximum @ TJ = 110°C
ZqJC(t) = RqJC(t)•r(t)
10

0.1
Maximum @ TJ = 25°C
1.0

0.1 0.01
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.1 1.0 10 100 1000 10,000
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) t, TIME (ms)

Figure 3. On–State Characteristics Figure 4. Transient Thermal Response

http://onsemi.com
604
 MCR716, MCR718

35 1.0

VGT, GATE TRIGGER VOLTAGE (VOLTS)

I GT, GATE TRIGGER CURRENT ( m A)

30

25 0.5

20

15 0
–40 –20 0 20 40 60 80 100 110 –40 –20 0 20 40 60 80 100 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 5. Typical Gate Trigger Current versus Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature Junction Temperature

2.0 2.0
IH , HOLDING CURRENT (mA)

IL , LATCHING CURRENT (mA)

1.5 1.5

1.0 1.0

0.5 0.5

0 0
–40 –20 0 20 40 60 80 100 110 –40 –20 0 20 40 60 80 100 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Typical Holding Current versus Figure 8. Typical Latching Current versus
Junction Temperature Junction Temperature

http://onsemi.com
605
 MCR716, MCR718

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the interface between the board and the package. With the
total design. The footprint for the semiconductor packages correct pad geometry, the packages will self align when
must be the correct size to insure proper solder connection subjected to a solder reflow process.

0.165 0.118
4.191 3.0
0.100
2.54
0.063
1.6
0.190 0.243
4.826 6.172

inches
mm
DPAK

http://onsemi.com
606
MKP1V120 Series
Preferred Device

Sidac High Voltage

Bidirectional Triggers
Bi–directional devices designed for direct interface with the ac
power line. Upon reaching the breakover voltage in each direction, the
device switches from a blocking state to a low voltage on–state.
Conduction will continue like a Triac until the main terminal current http://onsemi.com
drops below the holding current. The plastic axial lead package
provides high pulse current capability at low cost. Glass passivation SIDACS ( )
insures reliable operation. Applications are: 0.9 AMPERES RMS
• High Pressure Sodium Vapor Lighting 120 thru 240 VOLTS
• Strobes and Flashers
• Ignitors
• High Voltage Regulators
• Pulse Generators MT1 MT2
• Used to Trigger Gates of SCR’s and Triacs
• Indicates UL Registered — File #E116110
• Device Marking: Logo, Device Type, e.g., MKP1V120, Date Code

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit
Peak Repetitive Off–State Voltage VDRM, Volts
(Sine Wave, 50 to 60 Hz, VRRM
TJ = – 40 to 125°C)
MKP1V120, MKP1V130, MKP1V160 "90 DO–41
MKP1V240 "180 PLASTIC AXIAL

On-State Current RMS IT(RMS) "0.9 Amp

(No Polarity)
CASE 059A
(TL = 80°C, Lead Length = 3/8″,
All Conduction Angles)
Peak Non–repetitive Surge Current ITSM "4.0 Amps ORDERING INFORMATION
(60 Hz One Cycle Sine Wave,
TJ = 125°C) Device Package Shipping
Operating Junction Temperature Range TJ – 40 to °C MKP1V120RL DO41 Tape and Reel 5K/Reel
+125
MKP1V130RL DO41 Tape and Reel 5K/Reel
Storage Temperature Range Tstg – 40 to °C
+150 MKP1V160 DO41 Bulk 1K/Bag

MKP1V160RL DO41 Tape and Reel 5K/Reel

MKP1V240 DO41 Bulk 1K/Bag

MKP1V240RL DO41 Tape and Reel 5K/Reel

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 2000 607 Publication Order Number:

May, 2000 – Rev. 5 MKP1V120/D
 MKP1V120 Series

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Lead RθJL 40 °C/W
Lead Length = 3/8″
Lead Solder Temperature TL 260 °C
(Lead Length w 1/16″ from Case, 10 s Max)

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Repetitive Peak Off–State Current TJ = 25°C IDRM — — 5.0 µA
(50 to 60 Hz Sine Wave)
VDRM = 90 V, MKP1V120, MKP1V130 and MKP1V160
VDRM = 180 V, MKP1V240
ON CHARACTERISTICS
Breakover Voltage VBO Volts
IBO = 35 µA MKP1V120 110 — 130
35 µA MKP1V130 120 — 140
200 µA MKP1V160 150 170
35 µA MKP1V240 220 250
Peak On–State Voltage VTM — 1.3 1.5 Volts
(ITM = 1 A Peak, Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%)
Dynamic Holding Current IH — — 100 mA
(Sine Wave, 50 to 60 Hz, RL = 100 Ohm)
Switching Resistance RS 0.1 — — kΩ
(Sine Wave, 50 to 60 Hz)

DYNAMIC CHARACTERISTICS
Critical Rate–of–Rise of On–State Current, di/dt — 120 — A/µs
Critical Damped Waveform Circuit
(IPK = 130 Amps, Pulse Width = 10 µsec)

http://onsemi.com
608
 MKP1V120 Series

Voltage Current Characteristic of SIDAC

(Bidirectional Device)
+ Current

ITM VTM Slope = RS

Symbol Parameter
IH
IDRM Off State Leakage Current
VDRM Off State Repetitive Blocking Voltage IS
VBO Breakover Voltage VS
IDRM
IBO Breakover Current I(BO)
IH Holding Current + Voltage
VTM On State Voltage VDRM V(BO)
ITM Peak on State Current

RS + (V(I (BO)

S
– V S)
– I (BO))

140 1.0
TL , MAXIMUM ALLOWABLE LEAD TEMPERATURE (° C)

TL TJ = 125°C
130
IT(RMS) , ON–STATE CURRENT (AMPS)
Sine Wave
120 3/8″ 3/8″ 0.8 Conduction Angle = 180°C
110 Assembled in PCB
100 TJ = 125°C 0.6 Lead Length = 3/8″
Sine Wave
90 Conduction Angle = 180°C
80 0.4
70
60 0.2
50
40
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20 40 60 80 100 120 140
IT(RMS), ON–STATE CURRENT (AMPS) TA, MAXIMUM AMBIENT TEMPERATURE (°C)

Figure 1. Maximum Lead Temperature Figure 2. Maximum Ambient Temperature

I T , INSTANTANEOUS ON–STATE CURRENT (AMPS)

10 1.25
7.0 TJ = 25°C
PRMS , POWER DISSIPATION (WATTS)

5.0 Conduction Angle = 180°C

1.00
3.0
2.0 TJ = 25°C 125°C
0.75
1.0
0.7
0.50
0.5

0.3
0.25
0.2

0.1
0 1.0 2.0 3.0 4.0 5.0 0 0.2 0.4 0.6 0.8 1.0
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) IT(RMS), ON–STATE CURRENT (AMPS)

Figure 3. Typical On–State Voltage Figure 4. Typical Power Dissipation

http://onsemi.com
609
 MKP1V120 Series

THERMAL CHARACTERISTICS
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0
0.7
0.5
The temperature of the lead should be
0.3 measured using a thermocouple placed on the
0.2 lead as close as possible to the tie point. The
thermal mass connected to the tie point is
ZqJL(t) = RqJL • r(t) normally large enough so that it will not
0.1 DTJL = Ppk RqJL[r(t)] significantly respond to heat surges generated
0.07 where: tp TIME
in the diode as a result of pulsed operation
0.05 DTJL = the increase in junction temperature above the once steady–state conditions are achieved.
lead temperature Using the measured value of TL, the junction
0.03
r(t) = normalized value of transient thermal resistance at temperature may be determined by:
0.02 time, t from this figure. For example,
r(tp) = normalized value of transient resistance at time tp. TJ = TL + DTJL
0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t, TIME (ms)

Figure 5. Thermal Response

TYPICAL CHARACTERISTICS

1.4
VBO , BREAKOVER VOLTAGE (NORMALIZED)

IH , HOLDING CURRENT (NORMALIZED)

1.0 1.2

1.0

0.9 0.8

0.6

0.8 0.4
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Typical Breakover Voltage Figure 7. Typical Holding Current

100
IPK, PEAK CURRENT (AMPS)

IPK
10

10%
tw

1.0
0.1 1.0 10 100
tw, PULSE WIDTH (ms)

Figure 8. Pulse Rating Curve

http://onsemi.com
610
MKP3V120, MKP3V240
Preferred Device

Sidac High Voltage

Bidirectional Triggers
Bidirectional devices designed for direct interface with the ac power
line. Upon reaching the breakover voltage in each direction, the device
switches from a blocking state to a low voltage on–state. Conduction
will continue like a Triac until the main terminal current drops below http://onsemi.com
the holding current. The plastic axial lead package provides high pulse
current capability at low cost. Glass passivation insures reliable SIDACS ( )
operation. Applications are: 1 AMPERE RMS
• High Pressure Sodium Vapor Lighting 120 and 240 VOLTS
• Strobes and Flashers
• Ignitors
• High Voltage Regulators
• Pulse Generators MT1 MT2
• Used to Trigger Gates of SCR’s and Triacs
• Indicates UL Registered — File #E116110
• Device Marking: Logo, Device Type, e.g., MKP3V120, Date Code

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit
Peak Repetitive Off–State Voltage VDRM, Volts
(Sine Wave, 50 to 60 Hz, VRRM
TJ = – 40 to 125°C)
MKP3V120 "90
MKP3V240 "180 SURMETIC 50
PLASTIC AXIAL
On-State RMS Current IT(RMS) "1.0 Amp (No Polarity)
CASE 267
(TL = 80°C, Lead Length = 3/8″,
All Conduction Angles) STYLE 2

Peak Non–Repetitive Surge Current ITSM "20 Amps

(60 Hz One Cycle Sine Wave, ORDERING INFORMATION
Peak Value, TJ = 125°C)
Device Package Shipping
Operating Junction Temperature Range TJ – 40 to °C
+125 MKP3V120 SURMETIC 50 Bulk 500/Bag

Storage Temperature Range Tstg – 40 to °C MKP3V120RL SURMETIC 50 Tape and Reel

+150 1.5K/Reel
MKP3V240 SURMETIC 50 Bulk 500/Bag
MKP3V240RL SURMETIC 50 Tape and Reel
1.5K/Reel

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 2000 611 Publication Order Number:

May, 2000 – Rev. 3 MKP3V120/D
 MKP3V120, MKP3V240

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Lead RθJL 15 °C/W
(Lead Length = 3/8″)
Lead Solder Temperature TL 260 °C
(Lead Length w 1/16″ from Case, 10 s Max)

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Repetitive Peak Off–State Current IDRM — — 10 µA
(50 to 60 Hz Sine Wave)
VDRM = 90 V MKP3V120
VDRM = 180 V MKP3V240
ON CHARACTERISTICS
Breakover Voltage, IBO = 200 µA VBO Volts
MKP3V120 110 — 130
MKP3V240 220 — 250
Breakover Current IBO — — 200 µA
Peak On–State Voltage VTM — 1.1 1.5 Volts
(ITM = 1 A Peak, Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%)
Dynamic Holding Current IH — — 100 mA
(Sine Wave, 60 Hz, RL = 100 Ω)
Switching Resistance RS 0.1 — — kΩ
(Sine Wave, 50 to 60 Hz)

DYNAMIC CHARACTERISTICS
Critical Rate–of–Rise of On–State Current, di/dt — 120 — A/µs
Critical Damped Waveform Circuit
(IPK = 130 Amps, Pulse Width = 10 µsec)

http://onsemi.com
612
 MKP3V120, MKP3V240

Voltage Current Characteristic of SIDAC

(Bidirectional Device)
+ Current

ITM VTM Slope = RS

Symbol Parameter
IH
IDRM Off State Leakage Current
VDRM Off State Repetitive Blocking Voltage IS
VBO Breakover Voltage VS
IDRM
IBO Breakover Current I(BO)
IH Holding Current + Voltage
VTM On State Voltage VDRM V(BO)
ITM Peak on State Current

RS + (V(I (BO)

S
– V S)
– I (BO))

CURRENT DERATING

130
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (°C)

TA , MAXIMUM ALLOWABLE AMBIENT

120
α
α
140
TEMPERATURE ( °C)

α = Conduction Angle
110 α = Conduction Angle 120 TJ Rated = 125°C
TJ Rated = 125°C
100
100 80
a = 180°
60
90 40
20
a = 180°
80 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
IT(AV), AVERAGE ON–STATE CURRENT (AMPS) IT(AV), AVERAGE ON–STATE CURRENT (AMPS)

Figure 1. Maximum Case Temperature Figure 2. Maximum Ambient Temperature

PAV , MAXIMUM AVERAGE POWER DISSIPATION (WATTS)
I T , INSTANTANEOUS ON–STATE CURRENT (AMPS)

1.0 1.25
a = 180°
0.8 25°C 125°C
1.00
0.6 α

α = Conduction Angle
0.4 0.75 TJ Rated = 125°C

0.3
0.50
0.2
0.25

0.1
0.8 0.9 1.0 1.1 1.2 1.3 0 0.2 0.4 0.6 0.8 1.0
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) IT(AV), AVERAGE ON–STATE CURRENT (AMPS)

Figure 3. Typical Forward Voltage Figure 4. Typical Power Dissipation

http://onsemi.com
613
 MKP3V120, MKP3V240

THERMAL CHARACTERISTICS

1.0
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

ZqJL(t) = RqJL • r(t) LEAD LENGTH = 1/4″

0.5 DTJL = Ppk RqJL[r(t)]
where: tp TIME The temperature of the lead should be
0.3 DTJL = the increase in junction temperature above the measured using a thermocouple placed on the
0.2 lead temperature lead as close as possible to the tie point. The
r(t) = normalized value of transient thermal resistance at thermal mass connected to the tie point is
0.1 time, t from this figure. For example, normally large enough so that it will not
r(tp) = normalized value of significantly respond to heat surges generated
0.05 transient resistance at time tp. in the diode as a result of pulsed operation
once steady–state conditions are achieved.
0.03 Using the measured value of TL, the junction
0.02 temperature may be determined by:
TJ = TL + DTJL
0.01
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k
t, TIME (ms)

Figure 5. Thermal Response

TYPICAL CHARACTERISTICS

100 250
90 225
I(BO) , BREAKOVER CURRENT ( mA)

80 200
IH , HOLDING CURRENT (mA)

70 175
60 150
50 125
40 100
30 75
20 50
10 25
0 0
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Typical Breakover Current Figure 7. Typical Holding Current

http://onsemi.com
614
MMT05B230T3,
MMT05B260T3,
MMT05B310T3
Preferred Device

Thyristor Surge Protectors

High Voltage Bidirectional TSPD
http://onsemi.com
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover–triggered crowbar BIDIRECTIONAL TSPD ( )
protectors. Turn–off occurs when the surge current falls below the 50 AMP SURGE
holding current value. 265 thru 365 VOLTS
Secondary protection applications for electronic telecom equipment
at customer premises.
• High Surge Current Capability: 50 Amps 10 x 1000 µsec
Guaranteed at the extended temp range of –20°C to 65°C MT1 MT2
• The MMT05B230T3 Series is used to help equipment meet various
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,
IEC 950, UL 1459 & 1950 and FCC Part 68.
• Bidirectional Protection in a Single Device
• Little Change of Voltage Limit with Transient Amplitude or Rate
• Freedom from Wearout Mechanisms Present in Non–Semiconductor
Devices SMB
• Fail–Safe, Shorts When Overstressed, Preventing Continued (No Polarity)
Unprotected Operation. (Essentially JEDEC DO–214AA)
CASE 403C
• Surface Mount Technology (SMT)
• Indicates UL Registered — File #E116110 ORDERING INFORMATION
• Device Marking: MMT05B230T3: RPBF; MMT05B260T3: RPBG;
MMT05B310T3: RPBJ, and Date Code Device Package Shipping

MMT05B230T3 SMB 12mm Tape and Reel

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (2.5K/Reel)

Rating Symbol Value Unit MMT05B260T3 SMB 12mm Tape and Reel
(2.5K/Reel)
Off–State Voltage — Maximum VDM Volts
MMT05B230T3 "170
MMT05B260T3 "200 MMT05B310T3 SMB 12mm Tape and Reel
MMT05B310T3 "270 (2.5K/Reel)

Maximum Pulse Surge Short Circuit A(pk)

Current Non–Repetitive Preferred devices are recommended choices for future use
and best overall value.
Double Exponential Decay Waveform
Notes 1, 2
10 x 1000 µsec (–20°C to +65°C) IPPS1 "50
8 x 20 µsec IPPS2 "150
10 x 160 µsec IPPS3 "100
10 x 560 µsec IPPS4 "70
Maximum Non–Repetitive Rate of di/dt "150 A/µs
Change of On–State Current
Double Exponential Waveform,
R = 1.0, L = 1.5 µH, C = 1.67 µF,
Ipk = 110A

 Semiconductor Components Industries, LLC, 2000 615 Publication Order Number:

May, 2000 – Rev. 4 MMT05B230T3/D
 MMT05B230T3, MMT05B260T3, MMT05B310T3

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Operating Temperature Range TJ1 – 40 to + 125 °C
Blocking or Conducting State
Overload Junction Temperature — Maximum Conducting State Only TJ2 + 175 °C
Instantaneous Peak Power Dissipation (Ipk = 50A, 10x1000 µsec @ 25°C) PPK 2000 W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Characteristics Symbol Min Typ Max Unit
Breakover Voltage (Both polarities) V(BO) Volts
(dv/dt = 100 V/µs, ISC = 1.0 A, Vdc = 1000 V) MMT05B230T3 — — 265
MMT05B260T3 — — 320
MMT05B310T3 — — 365
(+65°C)
MMT05B230T3 — — 280
MMT05B260T3 — — 340
MMT05B310T3 — — 400
Breakover Voltage (Both polarities) V(BO) Volts
(f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms), MMT05B230T3 — — 265
RI = 1.0 kΩ, t = 0.5 cycle, Note 2) MMT05B260T3 — — 320
MMT05B310T3 — — 365
(+65°C)
MMT05B230T3 — — 280
MMT05B260T3 — — 340
MMT05B310T3 — — 400
Breakover Voltage Temperature Coefficient dV(BO)/dTJ — 0.08 — %/°C
Breakdown Voltage (I(BR) = 1.0 mA) Both polarities V(BR) Volts
MMT05B230T3 — 190 —
MMT05B260T3 — 240 —
MMT05B310T3 — 280 —
Off State Current (VD1 = 50 V) Both polarities ID1 — — 2.0 µA
Off State Current (VD2 = VDM) Both polarities ID2 — — 5.0
On–State Voltage (IT = 1.0 A) VT — 1.53 3.0 Volts
(PW ≤ 300 µs, Duty Cycle ≤ 2%, Note 2)
Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kΩ) IBO — 230 — mA
Both polarities
Holding Current (Both polarities) Note 2 IH 175 340 — mA
VS = 500 Volts; IT (Initiating Current) = "1.0 Amp (+65°C) 130 — —
Critical Rate of Rise of Off–State Voltage dv/dt 2000 — — V/µs
(Linear waveform, VD = Rated VBR, TJ = 25°C)
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal) CO — 22 — pF
Capacitance (f = 1.0 MHz, 2.0 Vdc, 15 mV rms Signal) — 53 75
(1) Allow cooling before testing second polarity.
(2) Measured under pulse conditions to reduce heating.

http://onsemi.com
616
 MMT05B230T3, MMT05B260T3, MMT05B310T3

Voltage Current Characteristic of TSPD

(Bidirectional Device)
+ Current

Symbol Parameter
ID1, ID2 Off State Leakage Current VTM
V(BO)
VD1, VD2 Off State Blocking Voltage
VBR Breakdown Voltage IH
ID1 ID2 I(BO)
VBO Breakover Voltage
IBO Breakover Current
IH Holding Current + Voltage
VD1 VD2 V(BR)
VTM On State Voltage

100 340
V BR , BREAKDOWN VOLTAGE (VOLTS)

VD1 = 50V 320

I D1, OFF–STATE CURRENT (µ A)

300 MMT05B310T3
10
280
260 MMT05B260T3
1
240

220
0.1 MMT05B230T3
200
180
0.01 160
0 20 40 60 80 100 120 140 – 50 –25 0 25 50 75 100 125
TEMPERATURE (°C) TEMPERATURE (°C)

Figure 1. Off–State Current versus Temperature Figure 2. Breakdown Voltage versus Temperature

http://onsemi.com
617
 MMT05B230T3, MMT05B260T3, MMT05B310T3

380 1000
V BO , BREAKOVER VOLTAGE (VOLTS)
360 900

I H , HOLDING CURRENT (mA)

340 MMT05B310T3 800

320 700

300 600
280 MMT05B260T3 500
260 400
240 300
MMT05B230T3
220 200
200 100
– 50 – 25 0 25 50 75 100 125 – 50 –25 0 25 50 75 100 125
TEMPERATURE (°C) TEMPERATURE (°C)

Figure 3. Breakover Voltage versus Temperature Figure 4. Holding Current versus Temperature

100
tr = rise time to peak value
tf = decay time to half value
Ipp – PEAK PULSE CURRENT – %Ipp

Peak
100
Value

CURRENT (A)

10
50 Half Value

0 1
0 tr tf 0.001 0.01 0.1 1 10 100
TIME (ms) TIME (sec)

Figure 5. Exponential Decay Pulse Waveform Figure 6. Peak Surge On–State Current versus
Surge Current Duration, Sinusoidal Waveform

http://onsemi.com
618
 MMT05B230T3, MMT05B260T3, MMT05B310T3

TIP

GND TELECOM
OUTSIDE
EQUIPMENT
PLANT

RING

PPTC*

TIP

GND TELECOM
OUTSIDE
EQUIPMENT
PLANT

RING

PPTC*

*Polymeric PTC (positive temperature coefficient) overcurrent protection device

HEAT COIL

TIP

TELECOM
OUTSIDE
GND EQUIPMENT
PLANT

RING

HEAT COIL

http://onsemi.com
619
 MMT05B230T3, MMT05B260T3, MMT05B310T3

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the interface between the board and the package. With the
total design. The footprint for the semiconductor packages correct pad geometry, the packages will self align when
must be the correct size to insure proper solder connection subjected to a solder reflow process.

0.089
2.261

0.108
2.743

0.085 inches
2.159 mm

SMB

http://onsemi.com
620
MMT10B230T3,
MMT10B260T3,
MMT10B310T3
Preferred Device

Thyristor Surge Protectors

High Voltage Bidirectional TSPD
http://onsemi.com
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover–triggered crowbar BIDIRECTIONAL TSPD ( )
protectors. Turn–off occurs when the surge current falls below the 100 AMP SURGE
holding current value. 265 thru 365 VOLTS
Secondary protection applications for electronic telecom equipment
at customer premises.
• Outstanding High Surge Current Capability: 100 Amps 10x1000 µsec
Guaranteed at the extended temp range of –20°C to 65°C MT1 MT2
• The MMT10B230T3 Series is used to help equipment meet various
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,
IEC 950, UL 1459 & 1950 and FCC Part 68.
• Bidirectional Protection in a Single Device
• Little Change of Voltage Limit with Transient Amplitude or Rate
• Freedom from Wearout Mechanisms Present in Non–Semiconductor
Devices SMB
• Fail–Safe, Shorts When Overstressed, Preventing Continued (No Polarity)
Unprotected Operation. (Essentially JEDEC DO–214AA)
CASE 403C
• Surface Mount Technology (SMT)
• Complies with GR1089 Second Level Surge Spec at 500 Amps ORDERING INFORMATION
2x10 µsec Waveforms
• Indicates UL Registered — File #E116110 Device Package Shipping

• Device Marking: MMT10B230T3: RPDF; MMT10B260T3: RPDG; MMT10B230T3 SMB 12mm Tape and Reel
MMT10B310T3: RPDJ, and Date Code (2.5K/Reel)

MMT10B260T3 SMB 12mm Tape and Reel

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (2.5K/Reel)
Rating Symbol Value Unit MMT10B310T3 SMB 12mm Tape and Reel
Off–State Voltage — Maximum VDM Volts (2.5K/Reel)
MMT10B230T3 "170
MMT10B260T3 "200
MMT10B310T3 "270 Preferred devices are recommended choices for future use
and best overall value.
Maximum Pulse Surge Short Circuit A(pk)
Current Non–Repetitive
Double Exponential Decay Waveform
Notes 1, 2
10 x 1000 µsec (–20°C to +65°C) IPPS1 "100
2 x 10 µsec IPPS2 "500
10 x 700 µsec IPPS3 "180
Maximum Non–Repetitive Rate of di/dt "100 A/µs
Change of On–State Current
Double Exponential Waveform,
R = 2.0, L = 1.5 µH, C = 1.67 µF,
Ipk = 110A

 Semiconductor Components Industries, LLC, 2000 621 Publication Order Number:

May, 2000 – Rev. 4 MMT10B230T3/D
 MMT10B230T3, MMT10B260T3, MMT10B310T3

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Operating Temperature Range TJ1 – 40 to + 125 °C
Blocking or Conducting State
Overload Junction Temperature — Maximum Conducting State Only TJ2 + 175 °C
Instantaneous Peak Power Dissipation (Ipk = 100A, 10x1000 µsec @ 25°C) PPK 4000 W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Characteristic Symbol Min Typ Max Unit
Breakover Voltage (Both polarities) V(BO) Volts
(dv/dt = 100 V/µs, ISC = 1.0 A, Vdc = 1000 V) MMT10B230T3 — — 265
MMT10B260T3 — — 320
MMT10B310T3 — — 365
(+65°C)
MMT10B230T3 — — 290
MMT10B260T3 — — 340
MMT10B310T3 — — 400
Breakover Voltage (Both polarities) V(BO) Volts
(f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms), MMT10B230T3 — — 265
RI = 1.0 kΩ, t = 0.5 cycle, Note 2) MMT10B260T3 — — 320
MMT10B310T3 — — 365
(+65°C)
MMT10B230T3 — — 290
MMT10B260T3 — — 340
MMT10B310T3 — — 400
Breakover Voltage Temperature Coefficient dV(BO)/dTJ — 0.08 — %/°C
Breakdown Voltage (I(BR) = 1.0 mA) Both polarities V(BR) Volts
MMT10B230T3 — 190 —
MMT10B260T3 — 240 —
MMT10B310T3 — 280 —
Off State Current (VD1 = 50 V) Both polarities ID1 — — 2.0 µA
Off State Current (VD2 = VDM) Both polarities ID2 — — 5.0
On–State Voltage (IT = 1.0 A) VT — 1.53 5.0 Volts
(PW ≤ 300 µs, Duty Cycle ≤ 2%, Note 2)
Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kΩ) IBO — 260 — mA
Both polarities
Holding Current (Both polarities) Note 2 IH 175 270 — mA
VS = 500 Volts; IT (Initiating Current) = "1.0 A (+65°C) 130 — —
Critical Rate of Rise of Off–State Voltage dv/dt 2000 — — V/µs
(Linear waveform, VD = Rated VBR, TJ = 25°C)
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal) CO — 65 — pF
Capacitance (f = 1.0 MHz, 2.0 Vdc, 15 mV rms Signal) — 160 200
(1) Allow cooling before testing second polarity.
(2) Measured under pulse conditions to reduce heating.

http://onsemi.com
622
 MMT10B230T3, MMT10B260T3, MMT10B310T3

Voltage Current Characteristic of TSPD

(Bidirectional Device)
+ Current

Symbol Parameter
ID1, ID2 Off State Leakage Current VTM
V(BO)
VD1, VD2 Off State Blocking Voltage
VBR Breakdown Voltage IH
ID1 ID2 I(BO)
VBO Breakover Voltage
IBO Breakover Current
IH Holding Current + Voltage
VD1 VD2 V(BR)
VTM On State Voltage

http://onsemi.com
623
 MMT10B230T3, MMT10B260T3, MMT10B310T3

100 340

V BR , BREAKDOWN VOLTAGE (VOLTS)

VD1 = 50V 320
I D1, OFF–STATE CURRENT (µ A)

MMT10B310T3
300
10
280
260
1
240 MMT10B260T3

220
0.1 200
MMT10B230T3
180
0.01 160
0 20 40 60 80 100 120 140 – 50 – 25 0 25 50 75 100 125
TEMPERATURE (°C) TEMPERATURE (°C)

Figure 1. Off–State Current versus Temperature Figure 2. Breakdown Voltage versus Temperature

360 1000
V BO , BREAKOVER VOLTAGE (VOLTS)

340 900
MMT10B310T3
320 I H , HOLDING CURRENT (mA) 800

300 MMT10B260T3 700

280 600
260 500
240 400
220 MMT10B230T3 300
200 200
180 100
– 50 – 25 0 25 50 75 100 125 – 50 – 25 0 25 50 75 100 125
TEMPERATURE (°C) TEMPERATURE (°C)

Figure 3. Breakover Voltage versus Temperature Figure 4. Holding Current versus Temperature

100
tr = rise time to peak value
tf = decay time to half value
Ipp – PEAK PULSE CURRENT – %Ipp

Peak
100
Value
CURRENT (A)

10
50 Half Value

0 1
0 tr tf 0.01 0.1 1 10 100
TIME (ms) TIME (sec)

Figure 5. Exponential Decay Pulse Waveform Figure 6. Peak Surge On–State Current versus
Surge Current Duration, Sinusoidal Waveform

http://onsemi.com
624
 MMT10B230T3, MMT10B260T3, MMT10B310T3

TIP

GND TELECOM
OUTSIDE
EQUIPMENT
PLANT

RING

PPTC*

TIP

GND TELECOM
OUTSIDE
EQUIPMENT
PLANT

RING

PPTC*

*Polymeric PTC (positive temperature coefficient) overcurrent protection device

HEAT COIL

TIP

TELECOM
OUTSIDE
GND EQUIPMENT
PLANT

RING

HEAT COIL

http://onsemi.com
625
 MMT10B230T3, MMT10B260T3, MMT10B310T3

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the interface between the board and the package. With the
total design. The footprint for the semiconductor packages correct pad geometry, the packages will self align when
must be the correct size to insure proper solder connection subjected to a solder reflow process.

0.089
2.261

0.108
2.743

0.085 inches
2.159 mm

SMB

http://onsemi.com
626
T2322B
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed primarily for ac power switching. The gate sensitivity of
these triacs permits the use of economical transistorized or integrated
circuit control circuits, and it enhances their use in low-power phase
control and load-switching applications. http://onsemi.com
• Very High Gate Sensitivity
• Low On-State Voltage at High Current Levels TRIACS
• Glass-Passivated Chip for Stability 2.5 AMPERES RMS
• Small, Rugged Thermopad Construction for Low Thermal 200 VOLTS
Resistance, High Heat Dissipation and Durability
• Device Marking: Device Type, e.g., T2322B, Date Code

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) MT2 MT1

Rating Symbol Value Unit G

Peak Repetitive Off-State Voltage(1) VDRM, 200 Volts

(TJ = 25 to 110°C, Gate Open) VRRM
On-State RMS Current (TC = 70°C) IT(RMS) 2.5 Amps
(Full Cycle Sine Wave 50 to 60 Hz)
Peak Non–Repetitive Surge Current ITSM 25 Amps
(One Full Cycle, Sine Wave 60 Hz,
TC = 70°C)
Circuit Fusing Consideration I2t 2.6 A2s
3
(t = 8.3 ms) 2 1
Peak Gate Power PGM 10 Watts TO–225AA
(Pulse Width ≤ 10 µs, TC = 70°C) (formerly TO–126)
Average Gate Power PG(AV) 0.5 Watt CASE 077
(t = 8.3 ms, TC = 70°C) STYLE 5

Peak Gate Current IGM 0.5 Amp PIN ASSIGNMENT

(Pulse Width = 10 µs, TC = 70°C)
1 Main Terminal 1
Operating Junction Temperature Range TJ –40 to °C
+110 2 Main Terminal 2
3 Gate
Storage Temperature Range Tstg –40 to °C
+150
Mounting Torque (6-32 Screw)(2) — 8.0 in. lb. ORDERING INFORMATION
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
Device Package Shipping
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded. T2322B TO225AA 500/Box
(2) Torque rating applies with use of torque washer (Shakeproof WD19523 or
equivalent). Mounting Torque in excess of 6 in. lb. does not appreciably
lower case-to-sink thermal resistance. Main terminal 2 and heat-sink
contact pad are common.

 Semiconductor Components Industries, LLC, 2000 627 Publication Order Number:

May, 2000 – Rev. 3 T2322/D
 T2322B

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 3.5 °C/W
Thermal Resistance, Junction to Ambient RθJA 60 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM,
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C IRRM — — 10 µA
TJ = 110°C — 0.2 0.75 mA

ON CHARACTERISTICS
Peak On-State Voltage(1) VTM — 1.7 2.2 Volts
"
(ITM = 10 A)
Gate Trigger Current (Continuous dc) IGT — — 10 mA
(VD = 12 V, RL = 100 Ω)
All Quadrants
Gate Trigger Voltage (Continuous dc) VGT — 1.0 2.2 Volts
(VD = 12 Vdc, RL = 100 Ω, TC = 25°C)
Gate Non–Trigger Voltage VGD 0.15 — — Volts
(VD = 12 V, RL = 100 Ω, TC = 110°C)
Holding Current IH — 15 30 mA
(VD = 12 V, IT (Initiating Current) = "200 mA, Gate Open)
Gate Controlled Turn-On Time tgt — 1.8 2.5 µs
(VD = Rated VDRM, ITM = 10 A pk, IG = 60 mA, tr = 0.1 µsec)
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage dv/dt 10 100 — V/µs
(VD = Rated VDRM, Exponential Waveform, TC = 100°C)
Critical Rate-of-Rise of Commutation Voltage dv/dt(c) 1.0 4.0 — V/µs
(VD = Rated VDRM, ITM = 3.5 A pk, Commutating
di/dt = 1.26 A/ms, Gate Unenergized, TC = 90°C)
(1) Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 2%.

http://onsemi.com
628
 T2322B

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

http://onsemi.com
629
T2500D
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies.
• Blocking Voltage 400 Volts http://onsemi.com
• All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
TRIACS
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability 6 AMPERES RMS
• High Surge Current Capability 60 Amps Peak at TC = 80°C 400 VOLTS
• Device Marking: Logo, Device Type, e.g., T2500D, Date Code
MT2 MT1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) G
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, 400 Volts
(Sine Wave 50 to 60 Hz, TJ = –40 to VRRM
+100°C, Gate Open) 4
On–State RMS Current (TC = +80°C) IT(RMS) 6.0 A
(Full Cycle Sine Wave 50 to 60 Hz)

Peak Non–repetitive Surge Current ITSM 60 A

(One Full Cycle, 60 Hz, TC = +80°C)
1
Circuit Fusing Considerations I2t 15 A2s 2
3
(t = 8.3 ms)
Peak Gate Power PGM 16 Watts TO–220AB
(TC = +80°C, Pulse Width = 10 µsec) CASE 221A
STYLE 4
Average Gate Power PG(AV) 0.2 Watt
(TC = +80°C, t = 8.3 ms)
PIN ASSIGNMENT
Peak Gate Current IGM 4.0 A 1 Main Terminal 1
(Pulse Width = 10 µsec)
2 Main Terminal 2
Operating Junction Temperature Range TJ – 40 to °C
3 Gate
+125
4 Main Terminal 2
Storage Temperature Range Tstg – 40 to °C
+150
(1) VDRM, VRRM for all types can be applied on a continuous basis. Blocking ORDERING INFORMATION
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded. Device Package Shipping

T2500D TO220AB 500/Box

 Semiconductor Components Industries, LLC, 1999 630 Publication Order Number:

February, 2000 – Rev. 2 T2500/D
 T2500D

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance — Junction to Case RθJC 2.7 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current TJ = 25°C IDRM, — — 10 µA
(Rated VDRM, VRRM; Gate Open) TJ = 100°C IRRM 2.0 mA
ON CHARACTERISTICS
Peak On-State Voltage* VTM — — 2.0 Volts
"
(ITM = 30 A Peak)
Gate Trigger Current (Continuous dc) IGT mA
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) — 10 25
MT2(+), G(–) — 20 60
MT2(–), G(–) — 15 25
MT2(–), G(+) — 30 60
Gate Trigger Voltage (Continuous dc) (All Four Quadrants) VGT — 1.25 2.5 Volts
(VD = 12 Vdc, RL = 100 Ohms)
Gate Non–Trigger Voltage VGD 0.2 — — Volts
(VD = 12 V, RL = 100 Ohms, TC = 100°C)
Holding Current IH — 15 30 mA
(Main Terminal Voltage = 12 Vdc, Gate Open,
"
Initiating Current = 200 mA)
Gate Controlled Turn-On Time tgt — 1.6 — µs
(Rated VDRM, IT = 10 A , IGT = 160 mA, Rise Time = 0.1 µs)

DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Commutation Voltage dv/dt(c) — 10 — V/µs
(Rated VDRM, IT(RMS) = 6 A, Commutating di/dt = 3.2 A/ms,
Gate Unenergized, TC = 80°C)
Critical Rate-of-Rise of Off-State Voltage dv/dt — 75 — V/µs
(Rated VDRM, Exponential Voltage Rise, Gate Open, TC = 100°C)
* Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

http://onsemi.com
631
 T2500D

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

http://onsemi.com
632
T2800D
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies.
• Blocking Voltage to 400 Volts http://onsemi.com
• All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
TRIACS
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability 8 AMPERES RMS
• Four Quadrant Gating 400 VOLTS
• Device Marking: Logo, Device Type, e.g., T2800D, Date Code
MT2 MT1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) G
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, 400 Volts
(TJ = –40 to +125°C, Gate Open) VRRM
On–State RMS Current IT(RMS) 8.0 Amps 4
(All Conduction Angles, TC = +80°C)
Peak Non–Repetitive Surge Current ITSM 100 Amps
(One Full Cycle Sine Wave, 60 Hz,
TJ = +80°C)
Circuit Fusing Consideration (t = 8.3 ms) I2t 40 A2s 1
2
Peak Gate Power PGM 16 Watts 3
(Pulse Width = 10 µs, TC = +80°C)
TO–220AB
Average Gate Power (t = 8.3 ms, PG(AV) 0.35 Watt CASE 221A
TC = +80°C) STYLE 4
Peak Gate Current IGM 4.0 Amps
(Pulse Width = 10 µs, TC = +80°C) PIN ASSIGNMENT
Operating Junction Temperature Range TJ – 40 to °C 1 Main Terminal 1
+125 2 Main Terminal 2
Storage Temperature Range Tstg – 40 to °C 3 Gate
+150
4 Main Terminal 2
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded. ORDERING INFORMATION
Device Package Shipping

T2800D TO220AB 500/Box

 Semiconductor Components Industries, LLC, 1999 633 Publication Order Number:

February, 2000 – Rev. 3 T2800/D
 T2800D

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case RθJC 2.2 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM,
(VD = Rated VDRM, VRRM; Gate Open) TC = 25°C IRRM — — 10 µA
TC = 100°C — — 2.0 mA
ON CHARACTERISTICS
Peak On-State Voltage(1) VTM — 1.7 2.0 Volts
"
(IT = 30 A Peak)
Gate Trigger Current (Continuous dc) IGT mA
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) — 10 25
MT2(+), G(–) — 20 60
MT2(–), G(–) — 15 25
MT2(–), G(+) — 30 60
Gate Trigger Voltage (Continuous dc) (All Quadrants) VGT — 1.25 2.5 Volts
(VD = 12 Vdc, RL = 100 Ohms)
Gate Non–Trigger Voltage (Continuous dc) VGD 0.2 — — Volts
(VD = 12 V, RL = 100 Ohms, TC = 100°C)
Holding Current IH — 15 30 mA
(VD = 12 Vdc, Initiating Current = "200 mA, Gate Open)
Gate Controlled Turn-On Time tgt — 1.6 — µs
(VD = Rated VDRM, IT = 10 A, IGT = 80 mA, Rise Time = 0.1 µs)

DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Commutation Voltage dv/dt(c) — 10 — V/µs
(VD = Rated VDRM, IT(RMS) = 8 A, Commutating di/dt = 4.1 A/ms,
Gate Unenergized, TC = 80°C)
Critical Rate-of-Rise of Off-State Voltage dv/dt 60 — — V/µs
(VD = Rated VDRM, Exponential Voltage Rise,
Gate Open, TC = 100°C)
(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

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 T2800D

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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 T2800D

TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (°C)

100 12

P(AV) , AVERAGE POWER DISSIPATION (WATTS)

10
95 FULL CYCLE
FULL CYCLE SINUSOIDAL MAXIMUM
8
SINUSOIDAL WAVEFORM
WAVEFORM TYPICAL
90 6

4
85
2

80 0
0 2 4 6 8 0 2 4 6 8 10 12
IT(RMS), RMS ON-STATE CURRENT (AMP) IT(RMS), RMS ON-STATE CURRENT (AMP)

Figure 1. Current Derating Figure 2. Power Dissipation

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 CHAPTER 4
Surface Mounting Guide – Package Information
and Tape and Reel Specifications

Page
Information for Using Surface Mount Thyristors . . . . . 638
Tape and Reel Packaging Specifications . . . . . . . . . . . 641
Surface Mount (DPAK, SMB, SOT–223) . . . . . . . . 641
Axial–Lead (DO–41, Surmetic 50) . . . . . . . . . . . . . . 644
TO–92 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 645

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 INFORMATION FOR USING SURFACE MOUNT THYRISTORS

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the interface between the board and the package. With the
total design. The footprint for the semiconductor packages correct pad geometry, the packages will self align when
must be the correct size to insure proper solder connection subjected to a solder reflow process.

0.089 0.165 0.118

2.261 4.191 3.0
0.100
2.54
0.063
0.108 1.6
2.743
0.190 0.243
4.826 6.172
0.085 inches
2.159 mm

inches
SMB mm
DPAK

0.15
3.8

0.079
2.0

0.248
6.3
0.091 0.091
2.3 2.3

0.079
2.0

0.059 0.059 0.059 inches

1.5 1.5 1.5 mm

SOT-223

POWER DISSIPATION

The power dissipation of a surface mount thyristor is a The values for the equation are found in the maximum
function of the MT2 or anode pad size. This can vary from ratings table on the data sheets. For example, substituting
the minimum pad size for soldering to a pad size given for these values into the equation for a SOT-223 at an ambient
maximum power dissipation. Power dissipation for a temperature TA of 25°C, one can calculate the power
surface mount device is determined by TJ(max), the dissipation of the device to be 550 milliwatts.
maximum rated junction temperature of the die, RθJA, the
thermal resistance from the device junction to ambient, and + 110°C * 25°C + 550 milliwatts
156°CńW
P
the operating temperature, TA. Using the values provided D
on the data sheets for various packages, PD can be
calculated as follows:
*
+
T T
J(max) A
P
D R
θJA

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 The 156°C/W for the SOT-223 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 550
milliwatts. There are other alternatives to achieving higher
power dissipation from the SOT-223 package. One is to
increase the area of the MT2 or anode pad. By increasing
the area of the MT2 or anode pad, the power dissipation
can be increased. Although one can almost double the
power dissipation with this method, one will be giving up
area on the printed circuit board which can defeat the
purpose of using surface mount technology. A graph of
RθJA versus MT2 or anode pad area for a SOT-223 package
is shown in Figure 1.

160

Rθ JA , JUNCTION TO AMBIENT THERMAL

150 TYPICAL L
140 MAXIMUM
130
RESISTANCE, ° C/W 120 L
DEVICE MOUNTED ON 4
110 FIGURE 1 AREA = L2
100 PCB WITH TAB AREA
90 AS SHOWN 1 2 3
80
70
60
50 MINIMUM
40 FOOTPRINT = 0.076 cm2
30
0 2.0 4.0 6.0 8.0 10
FOIL AREA (cm2)

Figure 1. Junction to Ambient Thermal Resistance versus Copper Tab Area

Another alternative would be to use a ceramic substrate board, the power dissipation can be doubled using the same
or an aluminum core board such as Thermal Clad. Using footprint.
a board material such as Thermal Clad, an aluminum core

SOLDER STENCIL GUIDELINES

Prior to placing surface mount components onto a made of brass or stainless steel with a typical thickness of
printed circuit board, solder paste must be applied to the 0.008 inches. The stencil opening size should be the same
pads. A solder stencil is required to screen the optimum as the pad size on the printed circuit board, i.e., a 1:1
amount of solder paste onto the footprint. The stencil is registration.

SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the • The soldering temperature and time shall not exceed
rated temperature of the device. When the entire device is 260°C for more than 10 seconds.
heated to a high temperature, failure to complete soldering • When shifting from preheating to soldering, the
within a short time could result in device failure. Therefore, maximum temperature gradient shall be 5°C or less.
the following items should always be observed in order to • After soldering has been completed, the device should be
minimize the thermal stress to which the devices are allowed to cool naturally for at least three minutes. Grad-
subjected. ual cooling should be used as the use of forced cooling
• Always preheat the device. will increase the temperature gradient and result in latent
• The delta temperature between the preheat and failure due to mechanical stress.
soldering should be 100°C or less.* • Mechanical stress or shock should not be applied during
• When preheating and soldering, the temperature of the cooling.
leads and the case must not exceed the maximum temper-
ature ratings as shown on the data sheet. When using *Soldering a device without preheating can cause excessive
infrared heating with the reflow soldering method, the thermal shock and stress which can result in damage to the
difference shall be a maximum of 10°C. device.

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 TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones,
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 2 shows a typical heating profile
for use when soldering a surface mount device to a printed
circuit board. This profile will vary among soldering
systems but it is a good starting point. Factors that can
affect the profile include the type of soldering system in
use, density and types of components on the board, type of
solder used, and the type of board or substrate material
being used. This profile shows temperature versus time.
The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177–189°C. When this type of furnace is used for solder
reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large
surface area, absorbs the thermal energy more efficiently,
then distributes this energy to the components. Because of
this effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.

STEP 1 STEP 2 STEP 3 STEP 4 STEP 5 STEP 6 STEP 7

PREHEAT VENT HEATING HEATING HEATING VENT COOLING
ZONE 1 “SOAK” ZONES 2 & 5 ZONES 3 & 6 ZONES 4 & 7
“RAMP” “RAMP” “SOAK” “SPIKE” 205° TO
219°C
200°C 170°C
DESIRED CURVE FOR HIGH PEAK AT
MASS ASSEMBLIES 160°C SOLDER
JOINT
150°C
150°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
100°C 140°C (DEPENDING ON
100°C MASS OF ASSEMBLY)

DESIRED CURVE FOR LOW

MASS ASSEMBLIES
50°C

TIME (3 TO 7 MINUTES TOTAL) TMAX

Figure 2. Typical Solder Heating Profile

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Tape and Reel Packaging Specifications
SURFACE MOUNT (DPAK, SMB, SOT–223)
Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as
the shipping container for various products and requires a minimum of handling. The antistatic/conductive tape provides a
secure cavity for the product when sealed with the “peel-back” cover tape.

• Two Reel Sizes Available (7″ and 13″) • Minimizes Product Handling
• Used for Automatic Pick and Place Feed Systems • EIA 481, –1, –2

Use the standard device title and add the required suffix as listed in the option table below. Note that the individual reels
have a finite number of devices depending on the type of product contained in the tape. Also note the minimum lot size is one
full reel for each line item, and orders are required to be in increments of the single reel quantity.

DEVICE ORIENTATION IN TAPE

SOT–223 SMB DPAK

12 mm 12 mm
16 mm

DIRECTION
OF FEED

EMBOSSED TAPE AND REEL ORDERING INFORMATION

Devices Per Reel

Tape Width Pitch Reel Size and Minimum Device
Package (mm) mm (inch) mm (inch) Order Quantity Suffix
DPAK 16 8.0 ± 0.1 (.315 ± .004) 330 (13) 2,500 T4
SMB 12 8.0 ± 0.1 (.315 ± .004) 330 (13) 2,500 T3
SOT–223 12 8.0 ± 0.1 (.315 ± .004) 178 (7) 1,000 T1

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SURFACE MOUNT (Continued)

EMBOSSED TAPE AND REEL DATA FOR DISCRETES

CARRIER TAPE SPECIFICATIONS

10 Pitches Cumulative Tolerance on Tape

P0 ± 0.2 mm
K
(± 0.008″)
D P2
t
E
Top Cover
Tape
A0
F W

B1 K0 B0
See
Note 1 P
D1
Embossment Center Lines
For Components
of Cavity
2.0 mm x 1.2 mm and Larger

For Machine Reference Only

Including Draft and RADII
Concentric Around B0 User Direction of Feed

* Top Cover Tape

Thickness (t1)
Bar Code Label
0.10 mm
R Min (.004″) Max.
Tape and Components
Shall Pass Around Radius “R”
Without Damage
Bending Radius Embossed Carrier
10° 100 mm Embossment
Maximum Component Rotation
(3.937″)
1 mm Max

Typical Component
Cavity Center Line
Tape

1 mm
(.039″) Max 250 mm
(9.843″)
Typical Component Camber (Top View)
Center Line Allowable Camber To Be 1 mm/100 mm Nonaccumulative Over 250 mm

DIMENSIONS
Tape
Size B1 Max D D1 E F K P0 P2 R Min T Max W Max
12 mm 8.2 mm 1.5 + 0.1 mm 1.5 mm Min 1.75 ± 0.1 mm 5.5 ± 0.05 mm 6.4 mm Max 4.0 ± 0.1 mm 2.0 ± 0.1 mm 30 mm 0.6 mm 12 ± .30 mm
(.323″) – 0.0 (.060″) (.069 ± .004″) (.217 ± .002″) (.252″) (.157 ± .004″) (.079 ± .002″) (1.18″) (.024″) (.470 ± .012″)
(.059 + .004″
16 mm 12.1 mm – 0.0) 7.5 ± 0.10 mm 7.9 mm Max 16.3 mm
(.476″) (.295 ± .004″) (.311″) (.642″)
Metric dimensions govern — English are in parentheses for reference only.
NOTE 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within .05 mm min. to .50 mm
max., the component cannot rotate more than 10° within the determined cavity.
NOTE 2: Pitch information is contained in the Embossed Tape and Reel Ordering Information on pg. 641.

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SURFACE MOUNT (Continued)

EMBOSSED TAPE AND REEL DATA FOR DISCRETES

T Max
Outside Dimension
Measured at Edge

1.5 mm Min 13.0 mm ± 0.5 mm

(.06″) (.512″ ± .002″)

A 20.2 mm Min 50 mm Min

(.795″) (1.969″)

Full Radius

Inside Dimension
G
Measured Near Hub

Size A Max G T Max

12 mm 330 mm 12.4 mm + 2.0 mm, – 0.0 18.4 mm
(12.992″) (.49″ + .079″, – 0.00) (.72″)
16 mm 360 mm 16.4 mm + 2.0 mm, – 0.0 22.4 mm
(14.173″) (.646″ + .078″, – 0.00) (.882″)

Reel Dimensions
Metric Dimensions Govern — English are in parentheses for reference only

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 LEAD TAPE PACKAGING STANDARDS FOR AXIAL–LEAD COMPONENTS (DO–41, Surmetic 50)

Table 1. Packaging Details (all dimensions in inches)

MPQ
Device Quantity Component Tape Reel Reel Max Off
Product Title Per Reel Spacing Spacing Dimension Dimension Alignment
Case Type Category Suffix (Item 3.3.7) A Dimension B Dimension C D (Max) E
Case 059A–01 DO–41 RL 5000 0.2 +/– 0.02 2.062 +/– 0.059 3 14 0.047
Plastic Axial
Case 267–03 Surmetic 50 RL 1500 0.4 +/– 0.02 2.062 +/– 0.059 3 14 0.047
Plastic Axial

Overall LG
Kraft Paper Item 3.1.2
Reel B

Roll Pad A
Item 3.1.1
Max Off
Alignment
E
Container
Tape, Blue Item 3.3.5 D1 D2
Tape, White 0.250
Item 3.2 Item 3.2 Both Sides Item 3.3.2
(Cathode) (Anode) 0.031
Item 3.3.5

Figure 3. Reel Packing Figure 4. Component Spacing

Optional Design

1.188

3.5 Dia.

Item 3.4
D
C

Figure 5. Reel Dimensions

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TO–92 EIA, IEC, EIAJ
TO–92
Radial Tape in Fan Fold
RADIAL
Box or On Reel TAPE IN
Radial tape in fan fold box or on reel of the reliable TO–92 package FAN FOLD
are the best methods of capturing devices for automatic insertion in
printed circuit boards. These methods of taping are compatible with
BOX OR
various equipment for active and passive component insertion. ON REEL
• Available in Fan Fold Box
• Available on 365 mm Reels
• Accommodates All Standard Inserters
• Allows Flexible Circuit Board Layout
• 2.5 mm Pin Spacing for Soldering
• EIA–468, IEC 286–2, EIAJ RC1008B

Ordering Notes:
When ordering radial tape in fan fold box or on reel, specify the style
per Figures 7, 8, and 14 through 17. Add the suffix “RLR” and “Style”
to the device title, i.e. 2N5060RLRA. This will be a standard 2N5060
radial taped and supplied on a reel per Figure 14.
Fan Fold Box Information — Minimum order quantity 1 Box.
Order in increments of 2000.
Reel Information — Minimum order quantity 1 Reel.
Order in increments of 2000.

US/EUROPEAN SUFFIX CONVERSIONS

Europe
U.S. Equivalent Reel or Fan Fold Box Qty Per Description of TO92 & Tape Orientation
RLRA RL Radial tape & reel 2K Round side of TO92 and adhesive tape visible
RLRE RL1 Radial tape & reel 2K Flat side of TO92 and adhesive tape visible
RLRF Radial tape & reel 2K Round side of TO92 and adhesive tape on reverse side
RLRM ZL1 Radial tape & fan fold box 2K Flat side of TO92 and adhesive tape visible
RLRP Radial tape & fan fold box 2K Round side of TO92 and adhesive tape visible

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TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL (Continued)

H2A H2A
H2B H2B

W2
H4 H5
T1
L1
H1
W1 W
L T

F1 T2
F2
P2 P2 D

P1
P

Figure 6. Device Positioning on Tape

Specification
Inches Millimeter
Symbol Item Min Max Min Max
D Tape Feedhole Diameter 0.1496 0.1653 3.8 4.2
D2 Component Lead Thickness Dimension 0.015 0.020 0.38 0.51
F1, F2 Component Lead Pitch 0.0945 0.110 2.4 2.8
H Bottom of Component to Seating Plane .059 .156 1.5 4.0
H1 Feedhole Location 0.3346 0.3741 8.5 9.5
H2A Deflection Left or Right 0 0.039 0 1.0
H2B Deflection Front or Rear 0 0.051 0 1.0
H4 Feedhole to Bottom of Component 0.7086 0.768 18 19.5
H5 Feedhole to Seating Plane 0.610 0.649 15.5 16.5
L Defective Unit Clipped Dimension 0.3346 0.433 8.5 11
L1 Lead Wire Enclosure 0.09842 — 2.5 —
P Feedhole Pitch 0.4921 0.5079 12.5 12.9
P1 Feedhole Center to Center Lead 0.2342 0.2658 5.95 6.75
P2 First Lead Spacing Dimension 0.1397 0.1556 3.55 3.95
T Adhesive Tape Thickness 0.06 0.08 0.15 0.20
T1 Overall Taped Package Thickness — 0.0567 — 1.44
T2 Carrier Strip Thickness 0.014 0.027 0.35 0.65
W Carrier Strip Width 0.6889 0.7481 17.5 19
W1 Adhesive Tape Width 0.2165 0.2841 5.5 6.3
W2 Adhesive Tape Position .0059 0.01968 .15 0.5
NOTES:
1. Maximum alignment deviation between leads not to be greater than 0.2 mm.
2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.
3. Component lead to tape adhesion must meet the pull test requirements established in Figures 10, 11 and 12.
4. Maximum non–cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.
5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.
6. No more than 1 consecutive missing component is permitted.
7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.
8. Splices will not interfere with the sprocket feed holes.

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TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL (Continued)

FAN FOLD BOX STYLES

ÇÇÇÇÇÇÇ ADHESIVE TAPE ON

ÇÇÇÇÇÇÇ
ADHESIVE TAPE ON
TOP SIDE TOP SIDE 330 mm

ÇÇÇÇÇÇÇ
13”
FLAT SIDE ROUNDED SIDE MAX

ÇÇÇÇÇÇÇ
CARRIER
CARRIER STRIP

ÇÇÇÇÇÇÇ
STRIP 252 mm
MAX
9.92”

FLAT SIDE OF TRANSISTOR ROUNDED SIDE OF TRANSISTOR

AND ADHESIVE TAPE VISIBLE. AND ADHESIVE TAPE VISIBLE. 58 mm
2.28”
Style M fan fold box is equivalent to styles E and Style P fan fold box is equivalent to styles A and MAX
F of reel pack dependent on feed orientation B of reel pack dependent on feed orientation
from box. from box.
Figure 7. Style RLRM Figure 8. Style RLRP Figure 9. Fan Fold Box
Dimensions

ADHESION PULL TESTS

500 GRAM PULL FORCE

70 GRAM
100 GRAM
PULL FORCE
PULL FORCE
16 mm
16 mm

HOLDING
HOLDING
FIXTURE
FIXTURE HOLDING
FIXTURE

There shall be no deviation in the leads and

no component leads shall be pulled free of
The component shall not pull free with a 300 gram The component shall not pull free with a 70 gram the tape with a 500 gram load applied to the
load applied to the leads for 3 ± 1 second. load applied to the leads for 3 ± 1 second. component body for 3 ± 1 second.

Figure 10. Test #1 Figure 11. Test #2 Figure 12. Test #3

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TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL (Continued)

REEL STYLES

CORE DIA.
ARBOR HOLE DIA. 82mm ± 1mm
30.5mm ± 0.25mm

MARKING NOTE

HUB RECESS
76.2mm ± 1mm

RECESS DEPTH
365mm + 3, – 0mm
9.5mm MIN

38.1mm ± 1mm
48 mm
MAX

Material used must not cause deterioration of components or degrade lead solderability

Figure 13. Reel Specifications

CARRIER STRIP CARRIER STRIP

ROUNDED
SIDE FLAT SIDE
ADHESIVE TAPE
ADHESIVE TAPE

FEED FEED

Rounded side of transistor and adhesive tape visible. Flat side of transistor and adhesive tape visible.

Figure 14. Style RLRA Figure 15. Style RLRE

ADHESIVE TAPE ON REVERSE SIDE

CARRIER STRIP ROUNDED

SIDE

FEED

Rounded side of transistor and carrier strip visible

(adhesive tape on reverse side).

Figure 16. Style RLRF

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 CHAPTER 5
Outline Dimensions and Leadform Options

Page
Outline Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 650
Leadform Options
TO–225AA (Case 77) . . . . . . . . . . . . . . . . . . . . . . . . . . 654
TO–220 (Case 221A) . . . . . . . . . . . . . . . . . . . . . . . . . . . 655

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Outline Dimensions
CASE 029–11
TO-92 (TO–226AA)
STYLES 10, 12, 16 NOTES:
A B 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 12: 3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R STYLE 10:
PIN 1. MAIN TERMINAL 1 IS UNCONTROLLED.
PIN 1. CATHODE
2. GATE 4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P 2. GATE
BEYOND DIMENSION K MINIMUM.
3. ANODE 3. MAIN TERMINAL 2
L
SEATING INCHES MILLIMETERS
PLANE K STYLE 16: DIM MIN MAX MIN MAX
PIN 1. ANODE A 0.175 0.205 4.45 5.20
2. GATE B 0.170 0.210 4.32 5.33
3. CATHODE C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
X X G 0.045 0.055 1.15 1.39
G H 0.095 0.105 2.42 2.66
D J 0.015 0.020 0.39 0.50
H K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
V C J N 0.080 0.105 2.04 2.66
P ––– 0.100 ––– 2.54
1 R 0.115 ––– 2.93 –––
N V 0.135 ––– 3.43 –––
SECTION X–X
N

CASE 059A–01
DO–41
PLASTIC AXIAL (No Polarity)

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A K B 2. CONTROLLING DIMENSION: INCH.

INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.235 0.260 5.97 6.60
K D
B 0.110 0.120 2.79 3.05
D 0.030 0.034 0.76 0.86
K 1.100 ––– 27.94 –––

CASE 077–09
TO–225AA
(Formerly TO-126)
–B– STYLES 2, 5
U F C
NOTES:
Q STYLE 2: 1. DIMENSIONING AND TOLERANCING PER ANSI
M PIN 1. CATHODE Y14.5M, 1982.
–A– 2. ANODE 2. CONTROLLING DIMENSION: INCH.
3. GATE
1 2 3 INCHES MILLIMETERS
DIM MIN MAX MIN MAX
STYLE 5: A 0.425 0.435 10.80 11.04
B 0.295 0.305 7.50 7.74
H PIN 1. MT 1
K 2. MT 2 C 0.095 0.105 2.42 2.66
3. GATE D 0.020 0.026 0.51 0.66
F 0.115 0.130 2.93 3.30
G 0.094 BSC 2.39 BSC
H 0.050 0.095 1.27 2.41
V J J 0.015 0.025 0.39 0.63
K 0.575 0.655 14.61 16.63
G R M 5 _ TYP 5 _ TYP
Q 0.148 0.158 3.76 4.01
S 0.25 (0.010) M A M B M
R 0.045 0.065 1.15 1.65
S 0.025 0.035 0.64 0.88
D 2 PL U 0.145 0.155 3.69 3.93
0.25 (0.010) M A M B M V 0.040 ––– 1.02 –––

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Outline Dimensions (continued)
CASE 221A–07 NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
TO–220AB Y14.5M, 1982.
STYLES 3, 4 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F BODY AND LEAD IRREGULARITIES ARE
SEATING
–T– PLANE
ALLOWED.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
4 C A 0.570 0.620 14.48 15.75
Q A T
S STYLE 3: B 0.380 0.405 9.66 10.28
PIN 1. CATHODE C 0.160 0.190 4.07 4.82
1 2 3
2. ANODE D 0.025 0.035 0.64 0.88
H 3. GATE F 0.142 0.147 3.61 3.73
4. ANODE G 0.095 0.105 2.42 2.66
K H 0.110 0.155 2.80 3.93
Z U J 0.014 0.022 0.36 0.55
STYLE 4: K 0.500 0.562 12.70 14.27
PIN 1. MAIN TERMINAL 1 L 0.045 0.060 1.15 1.52
2. MAIN TERMINAL 2 N 0.190 0.210 4.83 5.33
L 3. GATE Q 0.100 0.120 2.54 3.04
4. MAIN TERMINAL 2 R 0.080 0.110 2.04 2.79
V S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G
R U 0.000 0.050 0.00 1.27
D V 0.045 ––– 1.15 –––
N J Z ––– 0.080 ––– 2.04

NOTES:
CASE 221A–09 1. DIMENSIONING AND TOLERANCING PER ANSI
TO–220AB Y14.5M, 1982.
STYLES 3, 4 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
SEATING ALLOWED.
4 –T– PLANE
INCHES MILLIMETERS
C STYLE 3:
DIM MIN MAX MIN MAX
Q A T A 0.570 0.620 14.48 15.75
S PIN 1. CATHODE B 0.380 0.405 9.66 10.28
1 2 3 2. ANODE C 0.160 0.190 4.07 4.82
3. GATE
D 0.025 0.035 0.64 0.88
H 4. ANODE
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
K
H 0.110 0.155 2.80 3.93
Z U J 0.018 0.025 0.46 0.64
STYLE 4:
PIN 1. MAIN TERMINAL 1 K 0.500 0.562 12.70 14.27
2. MAIN TERMINAL 2 L 0.045 0.060 1.15 1.52
L 3. GATE N 0.190 0.210 4.83 5.33
4. MAIN TERMINAL 2 Q 0.100 0.120 2.54 3.04
V R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
G T 0.235 0.255 5.97 6.47
D R U 0.000 0.050 0.00 1.27
V 0.045 ––– 1.15 –––
N J Z ––– 0.080 ––– 2.04

CASE 221C–02 NOTES:

ISOLATED TO–220 Full Pack 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
STYLES 2, 3 2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
SEATING DIMENSION Z.
–B– –T–
F PLANE
INCHES MILLIMETERS
P C STYLE 2: DIM MIN MAX MIN MAX
S PIN 1. CATHODE A 0.680 0.700 17.28 17.78
N 2. ANODE B 0.388 0.408 9.86 10.36
3. GATE C 0.175 0.195 4.45 4.95
D 0.025 0.040 0.64 1.01
E E 0.340 0.355 8.64 9.01
A F 0.140 0.150 3.56 3.81
Q STYLE 3: G 0.100 BSC 2.54 BSC
H PIN 1. MT 1
1 2 3 H 0.110 0.155 2.80 3.93
2. MT 2
J 0.018 0.028 0.46 0.71
3. GATE
–Y– K 0.500 0.550 12.70 13.97
L 0.045 0.070 1.15 1.77
K N 0.049 ––– 1.25 –––
P 0.270 0.290 6.86 7.36
Z Q 0.480 0.500 12.20 12.70
R 0.090 0.120 2.29 3.04
L S 0.105 0.115 2.67 2.92
J Z 0.070 0.090 1.78 2.28
G
D 3 PL
R
0.25 (0.010) M B M Y

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Outline Dimensions (continued)

CASE 267–03
SURMETIC 50
PLASTIC AXIAL
(No Polarity)
STYLE 2

NOTES:
K A 1. DIMENSIONING AND TOLERANCING PER ANSI
D Y14.5M, 1982.
1 2 2. CONTROLLING DIMENSION: INCH.
STYLE 2:
NO POLARITY INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.370 0.380 9.40 9.65
B B 0.190 0.210 4.83 5.33
K D 0.048 0.052 1.22 1.32
K 1.000 ––– 25.40 –––

CASE 318E–04
SOT–223
STYLES 10, 11

NOTES:
A 1. DIMENSIONING AND TOLERANCING PER ANSI
STYLE 10: Y14.5M, 1982.
F 2. CONTROLLING DIMENSION: INCH.
PIN 1. CATHODE
2. ANODE
3. GATE INCHES MILLIMETERS
4. ANODE DIM MIN MAX MIN MAX
4 A 0.249 0.263 6.30 6.70
S B B 0.130 0.145 3.30 3.70
STYLE 11: C 0.060 0.068 1.50 1.75
1 2 3 PIN 1. MT 1 D 0.024 0.035 0.60 0.89
2. MT 2
F 0.115 0.126 2.90 3.20
3. GATE
4. MT 2 G 0.087 0.094 2.20 2.40
H 0.0008 0.0040 0.020 0.100
D J 0.009 0.014 0.24 0.35
L K 0.060 0.078 1.50 2.00
G L 0.033 0.041 0.85 1.05
J M 0_ 10 _ 0_ 10 _
S 0.264 0.287 6.70 7.30
C
0.08 (0003) M
H
K

CASE 369–07
D–PAK
STYLES 4, 5, 6

B C STYLE 4: NOTES:
PIN 1. CATHODE 1. DIMENSIONING AND TOLERANCING PER ANSI
V R E 2. ANODE Y14.5M, 1982.
3. GATE 2. CONTROLLING DIMENSION: INCH.
4. ANODE
INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
STYLE 5:
A 0.235 0.250 5.97 6.35
A PIN 1. GATE
B 0.250 0.265 6.35 6.73
2. ANODE
1 2 3 C 0.086 0.094 2.19 2.38
3. CATHODE
D 0.027 0.035 0.69 0.88
4. ANODE
S E 0.033 0.040 0.84 1.01
F 0.037 0.047 0.94 1.19
–T– G 0.090 BSC 2.29 BSC
STYLE 6:
SEATING K PIN 1. MT1 H 0.034 0.040 0.87 1.01
PLANE
2. MT2 J 0.018 0.023 0.46 0.58
3. GATE K 0.350 0.380 8.89 9.65
4. MT2 R 0.175 0.215 4.45 5.46
J S 0.050 0.090 1.27 2.28
F V 0.030 0.050 0.77 1.27
H
D 3 PL
G 0.13 (0.005) M T

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Outline Dimensions (continued)

CASE 369A–13
D–PAK
STYLES 4, 5, 6

NOTES:
–T– SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
PLANE Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
B C
INCHES MILLIMETERS
V R E Z DIM MIN MAX MIN MAX
A 0.235 0.250 5.97 6.35
B 0.250 0.265 6.35 6.73
4 C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
A E 0.033 0.040 0.84 1.01
S F 0.037 0.047 0.94 1.19
1 2 3 G 0.180 BSC 4.58 BSC
U H 0.034 0.040 0.87 1.01
K J 0.018 0.023 0.46 0.58
STYLE 4: STYLE 5:
PIN 1. CATHODE PIN 1. GATE K 0.102 0.114 2.60 2.89
2. ANODE 2. ANODE L 0.090 BSC 2.29 BSC
F J 3. GATE 3. CATHODE R 0.175 0.215 4.45 5.46
L 4. ANODE 4. ANODE S 0.020 0.050 0.51 1.27
H U 0.020 ––– 0.51 –––
V 0.030 0.050 0.77 1.27
D 2 PL STYLE 6: Z 0.138 ––– 3.51 –––
PIN 1. MT1
G 0.13 (0.005) M T 2. MT2
3. GATE
4. MT2

CASE 403C–01
SMB
(No Polarity)
(Essentially JEDEC DO–214AA)
S NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A 2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.

INCHES MILLIMETERS
DIM MIN MAX MIN MAX
D B A 0.160 0.180 4.06 4.57
B 0.130 0.150 3.30 3.81
C 0.075 0.095 1.90 2.41
D 0.077 0.083 1.96 2.11
H 0.0020 0.0060 0.051 0.152
J 0.006 0.012 0.15 0.30
K 0.030 0.050 0.76 1.27
P 0.020 REF 0.51 REF
S 0.205 0.220 5.21 5.59
C

H
K P J

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653
Leadform Options — TO-225AA (Case 77)
Plastic packaged semiconductors may be leadformed to a
variety of configurations for insertion into sockets or
circuit boards. Leadform options require assignment of a
special part number before ordering. To order leadformed
product, determine the desired leadform, the case number
and applicable leadform number, then contact your local
ON Semiconductor representative for the special part
number and pricing. Leadform orders require a minimum
order quantity of 25,000 and are non-cancellable after
processing. Additional leadform options not listed in this
document may also be available. Please consult product
engineering for information.

CASE 77 CASE 77
LEADFORM VC LEADFORM VP

0.340
± .005 0.510
± .005

0.365 ± 0.015

UNDERSIDE
0.500 ± .005
OF LEAD
0.050 REF. 0.100 ± 0.02 CL
0.330 ± .005
CL

0.220
± .005 0.025 R
MAX. TYP.
BOTTOM OF 0.187 ± 0.03 0.378 ± 0.02 MOUNTING
HEATSINK SURFACE
(Metal)

CASE 77
LEADFORM VS

0.278
REF.
0.740
MIN. 0.840 MIN.

UNDERSIDE
OF LEAD
0.050 REF. 0.018 RAW LEAD (REF.)

0.050 MAX.
BOTTOM OF 0.200 ± .01 0.180 ± .03
HEATSINK 30°
REF.

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654
Leadform Options — TO-220 (Case 221A)
• Leadform options require assignment of a special part number before ordering.
• Contact your local ON Semiconductor representative for special part number and pricing.
• 25,000 piece minimum quantity orders are required.
• Leadform orders are non-cancellable after processing.
• Leadforms apply to both ON Semiconductor Case 221A-07 and 221A-09 except as noted.
• Additional leadform options not listed in this document may also be available. Please consult product engineering for
information.

CASE 221A (TO–220) CASE 221A (TO–220)

LEADFORM AJ LEADFORM BV

CASE A
221A-07 0.360 ± 0.010
221A-09 Lead Not Trimmed
0.300 Min.
0.005
± 0.005

.100 REF.
.200 REF.
0.102 ± 0.005
.050 REF.
"
.765
.032 REF. .01 0.680 ± 0.005

" .004 " .010

.017 .580

.06 R
A

CASE 221A (TO–220) CASE 221A (TO–220)

LEADFORM DP LEADFORM CG

0.500 REF.
0.625 ± 0.01 0.03 RAD. TYP.

SEATING
PLANE
0.100
0.030 0.120 ± 0.020
0.600 ± 0.015
0.100 ± 0.015

0.060

0.065 ± 0.005
0.20 RAD. TYP.
0.95 REF.
UNDERSIDE OF BOTTOM OF
LEAD HEATSINK

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655
 CHAPTER 6
Index and Cross Reference

Page
Index and Cross Reference . . . . . . . . . . . . . . . . . . . . . . 657

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656
Index and Cross Reference

The following table represents a cross reference guide for all Thyristors that ON Semiconductor manufactures. Where
ON Semiconductor part numbers are shown in bold the device is a form, fit, and function replacement for the industry part
number, although some very minor differences may exist.

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
Industry ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
ON Semiconductor Page Industry ON Semiconductor Page

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Part Number Nearest Replacement Number Part Number Nearest Replacement Number
2N1601 MCR12D 250, 518 2N3031 MCR100–3 249, 566

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N1602

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N1603
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR12D

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR12D
ÁÁÁÁ
250, 518
250, 518
2N3032
2N3228
MCR100–3
MCR12M
249, 566
250, 518

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
2N1604 MCR12D 250, 518 2N3254 MCR100–3 249, 566

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
2N1770 MCR12D 250, 518 2N3255 MCR100–3 249, 566
2N1771 MCR12D 250, 518 2N3256 MCR100–3 249, 566

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N1771A

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N1772

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR12D

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR12D

ÁÁÁÁ
250, 518
250, 518
2N3257
2N3258
MCR100–3
MCR100–3
249, 566
249, 566

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
2N1772A MCR12D 250, 518 2N3259 MCR100–3 249, 566
2N1773 MCR12D 250, 518 2N3269 MCR12D 250, 518

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N1773A

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N1774

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR12D

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR12D

ÁÁÁÁ
250, 518
250, 518
2N3270
2N3271
MCR12D
MCR12D
250, 518
250, 518

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
2N1774A MCR12D 250, 518 2N3272 MCR12D 250, 518
2N1775 MCR12D 250, 518 2N3668 2N6507 251, 298

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N1775A

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N1776

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR12D

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR12D

ÁÁÁÁ
250, 518
250, 518
2N3669
2N3936
2N6507
MCR12D
251, 298
250, 518

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
2N1776A MCR12D 250, 518 2N3937 MCR12D 250, 518

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
2N1777 MCR12D 250, 518 2N3938 MCR12D 250, 518
2N1777A MCR12D 250, 518 2N3939 MCR12D 250, 518

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N1778

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N1778A

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR12M

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR12M

ÁÁÁÁ
250, 518
250, 518
2N3940
2N4096
MCR12M
MCR100–3
250, 518
249, 566

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
2N2575 2N6505 251, 298 2N4097 MCR100–3 249, 566
2N2576 2N6507 251, 298 2N4098 MCR100–4 249, 566

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N2679

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N2680

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–3

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–3

ÁÁÁÁ
249, 566
249, 566
2N4101
2N4102
MCR12M
MCR12M
250, 518
250, 518

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
2N2682 MCR100–4 249, 566 2N4103 2N6508 251, 298
2N2683 MCR100–3 249, 566 2N4108 MCR100–3 249, 566

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N2684

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N2685

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–3

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–3

ÁÁÁÁ
249, 566
249, 566
2N4109
2N4110
MCR100–3
MCR100–4
249, 566
249, 566

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
2N2686 MCR100–4 249, 566 2N4144 MCR100–3 249, 566
2N2687 MCR100–3 249, 566 2N4145 MCR100–3 249, 566

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N2688

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N2689
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–3

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–3
ÁÁÁÁ
249, 566
249, 566
2N4147
2N4148
MCR100–3
MCR100–3
249, 566
249, 566

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
2N2690 MCR100–4 249, 566 2N4149 MCR100–4 249, 566

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
2N2919 MCR12M 250, 518 2N4167 MCR12D 250, 518
2N3001 MCR100–3 249, 566 2N4168 MCR12D 250, 518

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N3002

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N3003

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–3

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–3

ÁÁÁÁ
249, 566
249, 566
2N4169
2N4170
MCR12D
MCR12D
250, 518
250, 518

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
2N3004 MCR100–4 249, 566 2N4171 MCR12D 250, 518
2N3005 MCR100–3 249, 566 2N4172 MCR12D 250, 518

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N3006

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N3007

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–3

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–3

ÁÁÁÁ
249, 566
249, 566
2N4173
2N4174
MCR12M
MCR12M
250, 518
250, 518

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
2N3008 MCR100–4 249, 566 2N4183 MCR12D 250, 518
2N3027 MCR100–3 249, 566 2N4184 MCR12D 250, 518

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N3028

ÁÁÁÁÁÁ
2N3029
2N3030
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–3

ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–3
MCR100–3
ÁÁÁÁ
249, 566
249, 566
249, 566
2N4185
2N4186
2N4187
MCR12D
MCR12D
MCR12D
250, 518
250, 518
250, 518
Bold items are a form, fit, and function replacement for the industry part number, although some very minor differences may exist.

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657
ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
Industry ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
ON Semiconductor Page Industry ON Semiconductor Page

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Part Number Nearest Replacement Number Part Number Nearest Replacement Number

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
2N4188 MCR12D 250, 518 2N6240 MCR106–6 249, 572
2N4189 MCR12M 250, 518 2N6241 MCR106–8 249, 572

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N4190

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N4332

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR12M

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–3

ÁÁÁÁ
250, 518
249, 566
2N6342
2N6342A
2N6344
2N6344
253, 278
253, 278

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
2N4333 MCR100–3 249, 566 2N6343 2N6344 253, 278
2N4334 MCR100–3 249, 566 2N6343A 2N6344A 254, 283

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N4335

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N4336

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–4

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–4

ÁÁÁÁ
249, 566
249, 566
2N6344
2N6344A
2N6344
2N6344A
253, 278
254, 283

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
2N4441 MCR218–2 250, 575 2N6345 2N6349 253, 278

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
2N4442 MCR218–4 250, 575 2N6345A 2N6349A 254, 283
2N4443 MCR218–6 250, 575 2N6346 2N6348A 254, 283

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N4444

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N5060

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR12M

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N5060

ÁÁÁÁ
250, 518
249, 258
2N6346A
2N6347
2N6348A
2N6348A
254, 283
254, 283

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
2N5061 2N5061 249, 258 2N6347A 2N6348A 254, 283
2N5062 2N5062 249, 258 2N6348 2N6348A 254, 283

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N5064

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N5722

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N5064

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–6

ÁÁÁÁ
249, 258
249, 566
2N6348A
2N6349
2N6348A
2N6349
254, 283
253, 278

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
2N5724 MCR100–3 249, 566 2N6349A 2N6349A 254, 283
2N5725 MCR100–3 249, 566 2N6394 2N6394 251, 288

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N5726

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N5754

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–4

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6071A

ÁÁÁÁ
249, 566
252, 272
2N6395
2N6396
2N6395
2N6397
251, 288
251, 288

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
2N5755 2N6071A 252, 272 2N6397 2N6397 251, 288
2N5756 2N6073A 252, 272 2N6398 2N6399 251, 288

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N5757

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6027
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6073A

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6027
ÁÁÁÁ
252, 272
256, 265
2N6399
2N6400
2N6399
2N6400
251, 288
251, 293

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
2N6028 2N6028 256, 265 2N6401 2N6401 251, 293

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
2N6068 2N6071A 252, 272 2N6402 2N6402 251, 293
2N6068A 2N6071A 252, 272 2N6403 2N6403 251, 293

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6069

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6069A

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6071A

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6071A

ÁÁÁÁ
252, 272
252, 272
2N6404
2N6405
2N6404
2N6405
251, 293
251, 293

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
2N6070 2N6071A 252, 272 2N6504 2N6504 251, 298
2N6070A 2N6071A 252, 272 2N6505 2N6505 251, 298

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6071A

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6071B

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6071A

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6071B

ÁÁÁÁ
252, 272
252, 272
2N6506
2N6507
2N6507
2N6507
251, 298
251, 298

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
2N6072 2N6073A 252, 272 2N6508 2N6508 251, 298
2N6072A 2N6073A 252, 272 2N6509 2N6509 251, 298

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6073

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6073A

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6073A

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6073A

ÁÁÁÁ
252, 272
252, 272
2N877
2N878
MCR100–3
MCR100–3
249, 566
249, 566

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
2N6073B 2N6073B 252, 272 2N879 MCR100–3 249, 566
2N6074B 2N6075B 252, 272 2N880 MCR100–4 249, 566

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6075A

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6075B
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6075A

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6075B
ÁÁÁÁ
252, 272
252, 272
2N881
2N884
MCR100–4
MCR100–3
249, 566
249, 566

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
2N6151 MAC210A8 254, 433 2N885 MCR100–3 249, 566

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
2N6152 MAC210A8 254, 433 2N886 MCR100–3 249, 566
2N6153 MAC210A8 254, 433 2N887 MCR100–3 249, 566

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6154

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6155

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC210A8

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC210A8

ÁÁÁÁ
254, 433
254, 433
2N888
2N889
MCR100–4
MCR100–4
249, 566
249, 566

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
2N6156 MAC210A8 254, 433 2N948 MCR100–3 249, 566
2N6234 MCR106–6 249, 572 2N949 MCR100–3 249, 566

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6235

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6236

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR106–6

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR106–6

ÁÁÁÁ
249, 572
249, 572
2N950
B136–500F
MCR100–3
MAC4M
249, 566
253, 348

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
2N6237 MCR106–6 249, 572 B136–600F MAC4M 253, 348
2N6238 MCR106–6 249, 572 B136–800F MAC4N 253, 348

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6239
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR106–6
ÁÁÁÁ 249, 572 B149B MCR100–4 249, 566

Bold items are a form, fit, and function replacement for the industry part number, although some very minor differences may exist.

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ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
Industry ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
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ON Semiconductor Page Industry ON Semiconductor Page

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Part Number Nearest Replacement Number Part Number Nearest Replacement Number

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
B149D MCR100–6 249, 566 BT136–500D MAC8SM 253, 363
B149E MCR100–8 249, 566 BT136–500E MAC4SM 253, 353

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
B149G

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BCR10CM–12

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–8

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC210A8

ÁÁÁÁ
249, 566
254, 433
BT136–500G
BT136–600
MAC9M
MAC4M
253, 369
253, 348

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BCR10CM–8 MAC210A8 254, 433 BT136–600D MAC8SM 253, 363
BCR10PM–12 MAC210A8FP 254, 438 BT136–600E MAC4SM 253, 353

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BCR10PM–8

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BCR12CM–12

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC210A8FP

ÁÁÁÁÁÁÁÁ
MAC12M

ÁÁÁÁ
254, 438
254, 374
BT136–600G
BT136–800
MAC9M
MAC4N
253, 369
253, 348

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BCR12CM–8 MAC12D 254, 374 BT136–800E MAC4SN 253, 353

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BCR12PM–12 MAC212A8FP 254, 443 BT136–800G MAC9N 253, 369
BCR12PM–8 MAC212A6FP 254, 443 BT136F–500G MAC218A10FP 253, 453

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BCR16CM–12

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BCR16CM–8

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC16CM

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC16CD

ÁÁÁÁ
255, 410
255, 410
BT136F–600G
BT136F–800G
MAC218A10FP
MAC218A10FP
253, 453
253, 453

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BCR16PM–12 MAC15A8FP 255, 394 BT136S–500 MAC4DCMT4 252, 320
BCR16PM–8 MAC15A6FP 255, 394 BT136S–500D MAC4DHMT4 252, 328

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BCR20AM–12

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BCR20AM–8

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC223A8

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC223A6

ÁÁÁÁ
255, 457
255, 457
BT136S–500E
BT136S–600
MAC4DSMT4
MAC4DCMT4
252, 340
252, 320

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BCR5AM–12 MAC8SM 253, 363 BT136S–600D MAC4DHMT4 252, 328
BCR5AM–8 MAC8SD 253, 363 BT136S–600E MAC4DSMT4 252, 340

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BCR5AS–4

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BCR5AS–8

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC4DCMT4

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC4DCMT4
252, 320
252, 320
BT136S–800
BT136S–800E
MAC4DCNT4
MAC4DSNT4
252, 320
252, 340

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BCR5PM–12 MAC229A8FP 253, 474 BT136X–500G MAC218A10FP 253, 453
BCR5PM–8 MAC229A8FP 253, 474 BT136X–600G MAC218A10FP 253, 453

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BCR6AM–12

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BCR6AM–8
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC8M

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC8D
ÁÁÁÁ
253, 358
253, 358
BT136X–800G
BT137–500
MAC218A10FP
MAC8M
253, 453
253, 358

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BCR8CM–12 MAC8M 253, 358 BT137–500D MAC228A8 253, 470

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BCR8CM–8 MAC8D 253, 358 BT137–500E MAC228A8 253, 470
BRB10–400B MAC12D 254, 374 BT137–600 MAC8M 253, 358

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BRX44

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BRX45

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–3

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–3

ÁÁÁÁ
249, 566
249, 566
BT137–600D
BT137–600E
MAC228A8
MAC228A8
253, 470
253, 470

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BRX46 MCR100–3 249, 566 BT137–800 MAC8N 253, 358
BRX47 MCR100–4 249, 566 BT137–800E MAC228A10 253, 470

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BRX49

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BRY55–100

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–6

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–3

ÁÁÁÁ
249, 566
249, 566
BT137F–500
BT137F–600
MAC218A10FP
MAC218A10FP
253, 453
253, 453

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BRY55–200 MCR100–4 249, 566 BT137F–800 MAC218A10FP 253, 453
BRY55–30 MCR100–3 249, 566 BT137G–500 MAC9M 253, 369

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BRY55–400

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BRY55–500

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–6

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–8

ÁÁÁÁ
249, 566
249, 566
BT137G–600
BT137G–800
MAC9M
MAC9N
253, 369
253, 369

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BRY55–60 MCR100–3 249, 566 BT137X–500D MAC229A8FP 253, 474
BRY55–600 MCR100–8 249, 566 BT137X–500E MAC229A8FP 253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BRY55M–300

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BRY55M–400
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–6

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–6
ÁÁÁÁ
249, 566
249, 566
BT137X–500G
BT137X–600D
MAC218A10FP
MAC229A8FP
253, 453
253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BRY55M–600 MCR100–8 249, 566 BT137X–600E MAC229A8FP 253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BT131–500 MAC997B8 252, 483 BT137X–600G MAC218A10FP 253, 453
BT131–600 MAC997B8 252, 483 BT137X–800E MAC229A10FP 253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT132–500D

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT132–600D

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC997A8

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC997A8

ÁÁÁÁ
252, 483
252, 483
BT137X–800G
BT138–500
MAC218A10FP
MAC12HCM
253, 453
254, 379

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BT134–500D 2N6075A 252, 272 BT138–500E MAC12SM 254, 384
BT134–600D 2N6075A 252, 272 BT138–500G MAC12M 254, 374

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT134W–500D

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT134W–500E

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC08MT1

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC08MT1

ÁÁÁÁ
252, 311
252, 311
BT138–600
BT138–600E
MAC12HCM
MAC12SM
254, 379
254, 384

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BT134W–600D MAC08MT1 252, 311 BT138–600G MAC12M 254, 374
BT134W–600E MAC08MT1 252, 311 BT138–800 MAC12HCN 254, 379

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT136–500
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC4M
ÁÁÁÁ 253, 348 BT138–800E MAC12SN 254, 384

Bold items are a form, fit, and function replacement for the industry part number, although some very minor differences may exist.

http://onsemi.com
659
ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
Industry ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
ON Semiconductor Page Industry ON Semiconductor Page

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Part Number Nearest Replacement Number Part Number Nearest Replacement Number

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BT138–800G MAC12N 254, 374 BT151–500R MCR12M 250, 518
BT138X–500 MAC212A8FP 254, 443 BT151–650R MCR12N 250, 518

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT138X–500F

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT138X–500G

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC212A8FP

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC212A8FP
254, 443
254, 443
BT151–800R
BT151S–500R
MCR12N
MCR12DCMT4
250, 518
250, 522

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BT138X–600 MAC212A8FP 254, 443 BT151S–650R MCR12DCNT4 250, 522
BT138X–600F MAC212A8FP 254, 443 BT151S–800R MCR12DCNT4 250, 522

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT138X–600G

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT138X–800

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC212A8FP

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC212A10FP
254, 443
254, 443
BT151X–500R
BT151X–650R
MCR218–10FP
MCR218–10FP
250, 579
250, 579

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BT138X–800F MAC212A10FP 254, 443 BT151X–800R MCR218–10FP 250, 579

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BT138X–800G MAC212A10FP 254, 443 BT152–400R MCR25D 251, 550
BT139–500 MAC16M 255, 415 BT152–600R MCR25M 251, 550

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT139–500E

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT139–500F

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC15SM

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC16M

ÁÁÁÁ
254, 404
255, 415
BT152–800R
BT152X–400R
MCR25N
MCR225–8FP
251, 550
251, 584

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BT139–500G MAC16M 255, 415 BT152X–600R MCR225–8FP 251, 584
BT139–500H MAC16HCM 255, 420 BT152X–800R MCR225–10FP 251, 584

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT139–600

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT139–600E

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC16M

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC15SM

ÁÁÁÁ
255, 415
254, 404
BT168B
BT168BW
MCR100–4
MCR08BT1
249, 566
249, 491

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BT139–600F MAC16M 255, 415 BT168D MCR100–6 249, 566
BT139–600G MAC16M 255, 415 BT168DW MCR08MT1 249, 491

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT139–600H

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT139–800

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC16HCM

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC16N

ÁÁÁÁ
255, 420
255, 415
BT168E
BT168EW
MCR100–8
MCR08MT1
249, 566
249, 491

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BT139–800E MAC15SN 254, 404 BT168G MCR100–8 249, 566
BT139–800F MAC16N 255, 415 BT168GW MCR08MT1 249, 491

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT139–800G

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT139–800H
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC16N

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC16HCN
ÁÁÁÁ
255, 415
255, 420
BT169B
BT169D
MCR100–4
MCR100–6
249, 566
249, 566

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BT139X–500 MAC15A8FP 255, 394 BT169DW MCR08MT1 249, 491

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BT139X–500F MAC15A8FP 255, 394 BT169E MCR100–8 249, 566
BT139X–500G MAC15A8FP 255, 394 BT169G MCR100–8 249, 566

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT139X–500H

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT139X–600

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC15A8FP

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC15A8FP
255, 394
255, 394
BT258–500R
BT258–600R
MCR8SM
MCR8SM
250, 514
250, 514

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BT139X–600F MAC15A8FP 255, 394 BT258–800R MCR8SN 250, 514
BT139X–600G MAC15A8FP 255, 394 BT300–500R MCR8M 250, 510

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT139X–600H

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT139X–800

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC15A8FP

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC15A10FP
255, 394
255, 394
BT300–600R
BT300–800R
MCR8M
MCR8N
250, 510
250, 510

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BT139X–800F MAC15A10FP 255, 394 BT300S–500R MCR12DCMT4 250, 522
BT139X–800G MAC15A10FP 255, 394 BT300S–600R MCR12DCMT4 250, 522

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT139X–800H

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT145–500R

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC15A10FP

ÁÁÁÁÁÁÁÁ
MCR25M

ÁÁÁÁ
255, 394
251, 550
BT300S–800R
BT300X–500R
MCR12DCNT4
MCR218–10FP
250, 522
250, 579

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BT145–600R MCR25M 251, 550 BT300X–600R MCR218–10FP 250, 579
BT145–800R MCR25N 251, 550 BT300X–800R MCR218–10FP 250, 579

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT148–400R

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT148–500R
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR106–6

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR106–8
ÁÁÁÁ
249, 572
249, 572
BTA06–400B
BTA06–400C
MAC218A6FP
MAC229A8FP
253, 453
253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BT148–600R MCR106–8 249, 572 BTA06–600B MAC218A10FP 253, 453

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BT148S–600Z MCR708AT4 249, 597 BTA06–600C MAC229A8FP 253, 474
BT148W–400R MCR08MT1 249, 491 BTA06–700B MAC218A10FP 253, 453

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT148W–500R

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT148W–600R

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR08MT1

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR08MT1

ÁÁÁÁ
249, 491
249, 491
BTA06–700C
BTA06–800B
MAC229A10FP
MAC218A10FP
253, 474
253, 453

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BT150–500R MCR8SM 250, 514 BTA06–800C MAC229A10FP 253, 474
BT150–600R MCR8SM 250, 514 BTA08–400B MAC218A6FP 253, 453

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT150–800R

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT150M–500R

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR8SN

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR718T4

ÁÁÁÁ
250, 514
249, 602
BTA08–400BW
BTA08–400C
MAC218A6FP
MAC229A8FP
253, 453
253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BT150M–600R MCR718T4 249, 602 BTA08–400SW MAC229A8FP 253, 474
BT150S–500R MCR708AT4 249, 597 BTA08–400TW MAC229A8FP 253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BT150S–600R
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MCR708AT4 249, 597 BTA08–600B MAC218A10FP 253, 453

Bold items are a form, fit, and function replacement for the industry part number, although some very minor differences may exist.

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ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
Industry ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
ON Semiconductor Page Industry ON Semiconductor Page

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Part Number Nearest Replacement Number Part Number Nearest Replacement Number

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTA08–600BW MAC218A10FP 253, 453 BTA204S–600D MAC4DHMT4 252, 328
BTA08–600C MAC229A8FP 253, 474 BTA204S–600E MAC4DSMT4 252, 340

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTA08–600SW

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTA08–600TW

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC229A8FP

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC229A8FP
253, 474
253, 474
BTA204S–600F
BTA204S–800B
MAC4DCMT4
MAC4DCNT4
252, 320
252, 320

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTA08–700B MAC218A10FP 253, 453 BTA204S–800C MAC4DCNT4 252, 320
BTA08–700BW MAC218A10FP 253, 453 BTA204S–800E MAC4DSNT4 252, 340

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTA08–700C

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTA08–700SW

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC229A10FP

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC229A10FP
253, 474
253, 474
BTA204S–800F
BTA204W–500B
MAC4DCNT4
MAC08MT1
252, 320
252, 311

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTA08–700TW MAC229A10FP 253, 474 BTA204W–500C MAC08MT1 252, 311

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTA08–800B MAC218A10FP 253, 453 BTA204W–500D MAC08MT1 252, 311
BTA08–800BW MAC218A10FP 253, 453 BTA204W–500E MAC08MT1 252, 311

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTA08–800C

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTA10–400B

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC229A10FP

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC210A8FP
253, 474
254, 438
BTA204W–500F
BTA204W–600B
MAC08MT1
MAC08MT1
252, 311
252, 311

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTA10–400BW MAC210A8FP 254, 438 BTA204W–600C MAC08MT1 252, 311
BTA104–500 MAC223A8 255, 457 BTA204W–800B MAC08MT1 252, 311

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTA104–600

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTA104–800

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC223A8

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC223A10
255, 457
255, 457
BTA204W–800C
BTA204X–500B
MAC08MT1
MAC218A10FP
252, 311
253, 453

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTA10–600B MAC210A8FP 254, 438 BTA204X–500C MAC229A8FP 253, 474
BTA10–600BW MAC210A8FP 254, 438 BTA204X–500D MAC229A8FP 253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTA10–700B

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTA10–700BW

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC210A10FP

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC210A10FP
254, 438
254, 438
BTA204X–500E
BTA204X–500F
MAC229A8FP
MAC229A8FP
253, 474
253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTA10–800B MAC210A10FP 254, 438 BTA204X–600B MAC218A10FP 253, 453
BTA10–800BW MAC210A10FP 254, 438 BTA204X–600C MAC229A10FP 253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTA12–400B

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTA12–400BW
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC212A6FP

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC212A6FP
254, 443
254, 443
BTA204X–600D
BTA204X–600E
MAC229A8FP
MAC229A8FP
253, 474
253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTA12–600B MAC212A8FP 254, 443 BTA204X–600F MAC229A8FP 253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTA12–600BW MAC212A8FP 254, 443 BTA204X–800B MAC218A10FP 253, 453
BTA12–700B MAC212A10FP 254, 443 BTA204X–800C MAC229A10FP 253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTA12–700BW

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTA12–800B

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC212A10FP

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC212A10FP
254, 443
254, 443
BTA204X–800E
BTA204X–800F
MAC229A10FP
MAC229A10FP
253, 474
253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTA12–800BW MAC212A10FP 254, 443 BTA208–500B MAC9M 253, 369
BTA16–400BW MAC15A6FP 255, 394 BTA208–600B MAC9M 253, 369

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTA16–600BW

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTA16–700BW

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC15A8FP

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC15A10FP
255, 394
255, 394
BTA208–600D
BTA208–600E
MAC8SM
MAC8SM
253, 363
253, 363

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTA16–800BW MAC15A10FP 255, 394 BTA208–600F MAC8M 253, 358
BTA204–500B MAC4M 253, 348 BTA208–800B MAC9N 253, 369

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTA204–500C

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTA204–500D

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC4M

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC4SM

ÁÁÁÁ
253, 348
253, 353
BTA208–800E
BTA208–800F
MAC8SN
MAC8N
253, 363
253, 358

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTA204–500E MAC4SM 253, 353 BTA208X–600D MAC229A8FP 253, 474
BTA204–500F MAC4M 253, 348 BTA208X–600E MAC229A8FP 253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTA204–600B

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTA204–600C
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC4M

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC4M
ÁÁÁÁ
253, 348
253, 348
BTA208X–600F
BTA208X–800E
MAC229A10FP
MAC229A10FP
253, 474
253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTA204–600D MAC4SM 253, 353 BTA208X–800F MAC229A10FP 253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTA204–600E MAC4SM 253, 353 BTA210–500B MAC16HCM 255, 420
BTA204–600F MAC4M 253, 348 BTA210–600B MAC16HCM 255, 420

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTA204–800B

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTA204–800C

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC4N

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC4N

ÁÁÁÁ
253, 348
253, 348
BTA210–800B
BTA212–500B
MAC16HCN
MAC12HCM
255, 420
254, 379

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTA204–800E MAC4SN 253, 353 BTA212–600B MAC12HCM 254, 379
BTA204–800F MAC4N 253, 348 BTA212–600D MAC12SM 254, 384

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁÁ
BTA204S–500B

ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
BTA204S–500C ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC4DCMT4

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC4DCMT4
252, 320
252, 320
BTA212–600E
BTA212–600F
MAC12SM
MAC12SM
254, 384
254, 384

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTA204S–500D MAC4DHMT4 252, 328 BTA212–800B MAC12HCN 254, 379
BTA204S–500E MAC4DSMT4 252, 340 BTA212–800E MAC12SN 254, 384

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
BTA204S–500F
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC4DCMT4 252, 320 BTA212–800F MAC12SN 254, 384

Bold items are a form, fit, and function replacement for the industry part number, although some very minor differences may exist.

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661
ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
Industry ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
ON Semiconductor Page Industry ON Semiconductor Page

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Part Number Nearest Replacement Number Part Number Nearest Replacement Number

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTA216–600D MAC15SM 254, 404 BTB12–600C MAC12M 254, 374
BTA216–600E MAC15SM 254, 404 BTB12–600CW MAC12M 254, 374

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTA216–600F

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTA216–800E

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC16CM

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC15SN

ÁÁÁÁ
255, 410
254, 404
BTB12–700B
BTB12–700BW
MAC12HCN
MAC12HCN
254, 379
254, 379

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTA216–800F MAC16CN 255, 410 BTB12–700C MAC12N 254, 374
BTA216X–500B MAC15A8FP 255, 394 BTB12–700CW MAC12N 254, 374

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁÁ
BTA216X–600B

ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
BTA216X–800B ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC15A8FP

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC15A10FP
255, 394
255, 394
BTB12–800B
BTB12–800BW
MAC12HCN
MAC12HCN
254, 379
254, 379

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTA225–500B MAC223A8 255, 457 BTB12–800C MAC12N 254, 374

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTA225–500C MAC223A8 255, 457 BTB12–800CW MAC12N 254, 374
BTA225–600B MAC223A8 255, 457 BTB16–400B MAC223A6 255, 457

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTA225–600C

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTA225–800B

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC223A8

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC223A10
255, 457
255, 457
BTB16–400BW
BTB16–400CW
MAC16HCD
MAC16CD
255, 420
255, 410

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTA225–800C MAC223A10 255, 457 BTB16–600B MAC223A8 255, 457
BTA24–600BW MAC223A8FP 255, 461 BTB16–600BW MAC16HCM 255, 420

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTA24–700BW

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTA24–800BW

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC223A10FP

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC223A10FP
255, 461
255, 461
BTB16–600CW
BTB16–700B
MAC16CM
MAC223A10
255, 410
255, 457

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTB08–400B MAC9D 253, 369 BTB16–700BW MAC16HCN 255, 420
BTB08–400BW MAC9D 253, 369 BTB16–700CW MAC16CN 255, 410

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTB08–400C

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTB08–400CW

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC8SD

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC8D

ÁÁÁÁ
253, 363
253, 358
BTB16–800B
BTB16–800BW
MAC223A10
MAC16HCN
255, 457
255, 420

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTB08–600B MAC9M 253, 369 BTB16–800CW MAC16CN 255, 410
BTB08–600BW MAC9M 253, 369 BTB24–400B MAC223A6 255, 457

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTB08–600C

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTB08–600CW
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC8SM

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC8M
ÁÁÁÁ
253, 363
253, 358
BTB24–600B
BTB24–600BW
MAC223A8
MAC223A8
255, 457
255, 457

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTB08–700B MAC9N 253, 369 BTB24–700B MAC223A10 255, 457

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTB08–700BW MAC9N 253, 369 BTB24–700BW MAC223A10 255, 457
BTB08–700C MAC8SN 253, 363 BTB24–800B MAC223A10 255, 457

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTB08–700CW

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTB08–800B

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC8N

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC9N

ÁÁÁÁ
253, 358
253, 369
BTB24–800BW
C106B
MAC223A10
C106B
255, 457
249, 303

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTB08–800BW MAC9N 253, 369 C106D C106D 249, 303
BTB08–800CW MAC8N 253, 358 C106D1 C106D1 249, 303

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTB10–400B

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTB10–400BW

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC210A8

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC210A8

ÁÁÁÁ
254, 433
254, 433
C106F
C106M
C106B
C106M
249, 303
249, 303

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTB10–400C MAC12D 254, 374 C106M1 C106M1 249, 303
BTB10–400CW MAC12D 254, 374 C122A1 C122B1 250, 308

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTB10–600B

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTB10–600BW

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC210A8

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC210A8

ÁÁÁÁ
254, 433
254, 433
C122B1
C122D1
C122B1
MCR218–6
250, 308
250, 575

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTB10–600C MAC12M 254, 374 C122F1 C122F1 250, 308
BTB10–600CW MAC12M 254, 374 C122M1 MCR218–6 250, 575

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTB10–700B

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTB10–700BW
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC210A10

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC210A10
254, 433
254, 433
C122N1
CR1800SA
MCR8N
MMT05B230T3
250, 510
256, 615

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTB10–700C MAC12N 254, 374 CR1800SB MMT10B230T3 256, 621

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTB10–700CW MAC12N 254, 374 CR1800SC MMT10B230T3 256, 621
BTB10–800B MAC210A10 254, 433 CR2300SA MMT05B260T3 256, 615

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTB10–800BW

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTB10–800C

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC210A10

ÁÁÁÁÁÁÁÁ
MAC12N

ÁÁÁÁ
254, 433
254, 374
CR2300SB
CR2300SC
MMT10B260T3
MMT10B260T3
256, 621
256, 621

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTB10–800CW MAC12N 254, 374 CR2600SA MMT05B260T3 256, 615
BTB12–400B MAC12HCD 254, 379 CR2600SB MMT10B260T3 256, 621

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTB12–400BW

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTB12–400C

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC12HCD

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC12D

ÁÁÁÁ
254, 379
254, 374
CR2600SC
CR3100SA
MMT10B260T3
MMT05B310T3
256, 621
256, 615

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
BTB12–400CW MAC12D 254, 374 CR3100SB MMT10B310T3 256, 621
BTB12–600B MAC12HCM 254, 379 CR3100SC MMT10B310T3 256, 621

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
BTB12–600BW
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC12HCM
ÁÁÁÁ 254, 379 CR5AS–12 MCR8DSNT4 250, 504

Bold items are a form, fit, and function replacement for the industry part number, although some very minor differences may exist.

http://onsemi.com
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ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
Industry ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
ON Semiconductor Page Industry ON Semiconductor Page

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Part Number Nearest Replacement Number Part Number Nearest Replacement Number

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
CR5AS–8 MCR8DSMT4 250, 504 L4004F81 2N6073A 252, 272
CR6CM–12 MCR12LM 250, 534 L4004L5 MAC229A8FP 253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
CR6CM–8

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
CR8AM–12

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR12LD

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR12LM

ÁÁÁÁ
250, 534
250, 534
L4004L6
L4004L8
MAC229A8FP
MAC229A8FP
253, 474
253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
CR8AM–8 MCR12LD 250, 534 L4006L5 MAC229A8FP 253, 474
EC103A MCR100–3 249, 566 L4006L6 MAC229A8FP 253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
EC103A3

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
EC103B

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–3

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–4

ÁÁÁÁ
249, 566
249, 566
L4006L8
L4008L6
MAC229A8FP
MAC229A8FP
253, 474
253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
EC103B3 MCR100–4 249, 566 L4008L8 MAC229A8FP 253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
EC103C MCR100–6 249, 566 L401E3 MAC997B6 252, 483
EC103C3 MCR100–6 249, 566 L401E5 MAC997B6 252, 483

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
EC103D

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
EC103D3

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–6

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–6

ÁÁÁÁ
249, 566
249, 566
L401E6
L401E8
MAC97A6
MAC97–8
252, 425
252, 425

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
EC103E MCR100–8 249, 566 L4X8E3 MAC997B6 252, 483
EC103E3 MCR100–8 249, 566 L4X8E5 MAC997B6 252, 483

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
EC103M

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
EC103M3

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–8

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–8

ÁÁÁÁ
249, 566
249, 566
L4X8E6
L4X8E8
MAC97A6
MAC97–8
252, 425
252, 425

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
EC113A MCR100–3 249, 566 L6004F31 2N6075B 252, 272
EC113A3 MCR100–3 249, 566 L6004F51 2N6075B 252, 272

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
EC113B

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
EC113B3

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–4

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–4

ÁÁÁÁ
249, 566
249, 566
L6004F61
L6004F81
2N6075A
2N6075A
252, 272
252, 272

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
EC113C MCR100–6 249, 566 L6004L5 MAC229A8FP 253, 474
EC113C3 MCR100–6 249, 566 L6004L8 MAC229A8FP 253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
EC113D

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
EC113D3
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–6

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–6
ÁÁÁÁ
249, 566
249, 566
L6006L5
L6006L6
MAC229A8FP
MAC229A8FP
253, 474
253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
EC113E MCR100–8 249, 566 L6006L8 MAC229A8FP 253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
EC113E3 MCR100–8 249, 566 L6008L6 MAC229A8FP 253, 474
EC113M MCR100–8 249, 566 L6008L8 MAC229A8FP 253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
EC113M3

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
K1200G

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–8

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MKP3V120

ÁÁÁÁ
249, 566
256, 611
L601E3
L601E5
MAC997B8
MAC997B8
252, 483
252, 483

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
K2400G MKP3V240 256, 611 L601E6 MAC97A8 252, 425
L2004F31 2N6071B 252, 272 L601E8 MAC97–8 252, 425

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
L2004F51

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
L2004F61

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6071B

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6071A

ÁÁÁÁ
252, 272
252, 272
L694L6
L6X8E3
MAC229A8FP
MAC997B8
253, 474
252, 483

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
L2004F81 2N6071A 252, 272 L6X8E5 MAC997B8 252, 483
L2004L5 MAC229A8FP 253, 474 L6X8E6 MAC97A8 252, 425

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
L2004L6

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
L2004L8

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC229A8FP

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC229A8FP
253, 474
253, 474
L6X8E8
MAC08BT1
MAC97–8
MAC08BT1
252, 425
252, 311

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
L2006L5 MAC229A8FP 253, 474 MAC08DTI MAC08MT1 252, 311
L2006L6 MAC229A8FP 253, 474 MAC08MT1 MAC08MT1 252, 311

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
L2006L8

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
L2008L6
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC229A8FP

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC229A8FP
253, 474
253, 474
MAC12D
MAC12HCD
MAC12D
MAC12HCD
254, 374
254, 379

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
L2008L8 MAC229A8FP 253, 474 MAC12HCM MAC12HCM 254, 379

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
L201E3 MAC997B6 252, 483 MAC12HCN MAC12HCN 254, 379
L201E5 MAC997B6 252, 483 MAC12M MAC12M 254, 374

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
L201E6

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
L201E8

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC97A4

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC97–8

ÁÁÁÁ
252, 425
252, 425
MAC12N
MAC12SM
MAC12N
MAC12SM
254, 374
254, 384

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
L2X8E3 MAC997B6 252, 483 MAC12SN MAC12SN 254, 384
L2X8E5 MAC997B6 252, 483 MAC15–10 MAC15–10 255, 389

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
L2X8E6

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
L2X8E8

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC97A4

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC97–8

ÁÁÁÁ
252, 425
252, 425
MAC15–10FP
MAC15–4
MAC15A10FP
MAC15A6
255, 394
255, 389

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
L4004F31 2N6073B 252, 272 MAC15–4FP MAC15A6FP 255, 394
L4004F51 2N6073B 252, 272 MAC15–6 MAC15A6 255, 389

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
L4004F61
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6073A
ÁÁÁÁ 252, 272 MAC15–6FP MAC15A6FP 255, 394

Bold items are a form, fit, and function replacement for the industry part number, although some very minor differences may exist.

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ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁÁ
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ÁÁÁÁÁ
Industry ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
ON Semiconductor Page Industry ON Semiconductor Page

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Part Number Nearest Replacement Number Part Number Nearest Replacement Number

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC15–8 MAC15–8 255, 389 MAC212A6FP MAC212A6FP 254, 443
MAC15–8FP MAC15A8FP 255, 394 MAC212A8 MAC212A8 254, 448

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC15A10

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC15A10FP

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC15A10

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC15A10FP
255, 389
255, 394
MAC212A8FP
MAC218–10
MAC212A8FP
MAC210A10
254, 443
254, 433

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC15A4 MAC15A6 255, 389 MAC218–10FP MAC218A10FP 253, 453
MAC15A4FP MAC15A6FP 255, 394 MAC218–4 MAC210A8 254, 433

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC15A6

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC15A6FP

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC15A6

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC15A6FP
255, 389
255, 394
MAC218–4FP
MAC218–6
MAC218A6FP
MAC210A8
253, 453
254, 433

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC15A8 MAC15A8 255, 389 MAC218–6FP MAC218A6FP 253, 453

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC15A8FP MAC15A8FP 255, 394 MAC218–8 MAC210A8 254, 433
MAC15D MAC15M 254, 399 MAC218–8FP MAC218A10FP 253, 453

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC15M

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC15N

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC15M

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC15N

ÁÁÁÁ
254, 399
254, 399
MAC218A10
MAC218A10FP
MAC210A10
MAC218A10FP
254, 433
253, 453

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC15SD MAC15SD 254, 404 MAC218A4 MAC210A8 254, 433
MAC15SM MAC15SM 254, 404 MAC218A4FP MAC218A6FP 253, 453

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC15SN

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC16CD

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC15SN

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC16CD

ÁÁÁÁ
254, 404
255, 410
MAC218A6
MAC218A6FP
MAC210A8
MAC218A6FP
254, 433
253, 453

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC16CM MAC16CM 255, 410 MAC218A8 MAC210A8 254, 433
MAC16CN MAC16CN 255, 410 MAC218A8FP MAC218A10FP 253, 453

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC16D

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC16HCD

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC16D

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC16HCD

ÁÁÁÁ
255, 415
255, 420
MAC223–10
MAC223–10FP
MAC223A10
MAC223A10FP
255, 457
255, 461

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC16HCM MAC16HCM 255, 420 MAC223–4 MAC223A6 255, 457
MAC16HCN MAC16HCN 255, 420 MAC223–4FP MAC223A6FP 255, 461

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC16M

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC16N
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC16M

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC16N
ÁÁÁÁ
255, 415
255, 415
MAC223–6
MAC223–6FP
MAC223A6
MAC223A6FP
255, 457
255, 461

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC210–10 MAC210A10 254, 433 MAC223–8 MAC223A8 255, 457

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC210–10FP MAC210A10FP 254, 438 MAC223–8FP MAC223A8FP 255, 461
MAC210–4 MAC210A8 254, 433 MAC223A10 MAC223A10 255, 457

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC210–4FP

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC210–6

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC210A8FP

ÁÁÁÁÁÁÁÁ
MAC210A8

ÁÁÁÁ
254, 438
254, 433
MAC223A10FP
MAC223A4
MAC223A10FP
MAC223A6
255, 461
255, 457

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC210–6FP MAC210A8FP 254, 438 MAC223A4FP MAC223A6FP 255, 461
MAC210–8 MAC210A8 254, 433 MAC223A6 MAC223A6 255, 457

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC210–8FP

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC210A10

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC210A8FP

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC210A10
254, 438
254, 433
MAC223A6FP
MAC223A8
MAC223A6FP
MAC223A8
255, 461
255, 457

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC210A10FP MAC210A10FP 254, 438 MAC223A8FP MAC223A8FP 255, 461
MAC210A4 MAC210A8 254, 433 MAC224–10 MAC224A10 255, 465

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC210A4FP

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC210A6

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC210A8FP

ÁÁÁÁÁÁÁÁ
MAC210A8

ÁÁÁÁ
254, 438
254, 433
MAC224–4
MAC224–6
MAC224A4
MAC224A6
255, 465
255, 465

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC210A6FP MAC210A8FP 254, 438 MAC224–8 MAC224A8 255, 465
MAC210A8 MAC210A8 254, 433 MAC224A10 MAC224A10 255, 465

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC210A8FP

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC212–10
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC210A8FP

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC212A10
254, 438
254, 448
MAC224A4
MAC224A6
MAC224A4
MAC224A6
255, 465
255, 465

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC212–10FP MAC212A10FP 254, 443 MAC224A8 MAC224A8 255, 465

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC212–4 MAC212A8 254, 448 MAC228–10 MAC228A10 253, 470
MAC212–4FP MAC212A6FP 254, 443 MAC228–10FP MAC229A10FP 253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC212–6

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC212–6FP

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC212A8

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC212A6FP
254, 448
254, 443
MAC228–4
MAC228–4FP
MAC228A4
MAC229A8FP
253, 470
253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC212–8 MAC212A8 254, 448 MAC228–6 MAC228A6 253, 470
MAC212–8FP MAC212A8FP 254, 443 MAC228–6FP MAC229A8FP 253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC212A10

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC212A10FP

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC212A10

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC212A10FP
254, 448
254, 443
MAC228–8
MAC228–8FP
MAC228A8
MAC229A8FP
253, 470
253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC212A4 MAC212A8 254, 448 MAC228A10 MAC228A10 253, 470
MAC212A4FP MAC212A6FP 254, 443 MAC228A10FP MAC229A10FP 253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC212A6
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC212A8
ÁÁÁÁ 254, 448 MAC228A4 MAC228A4 253, 470

Bold items are a form, fit, and function replacement for the industry part number, although some very minor differences may exist.

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ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
Industry ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
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ÁÁÁÁ
ON Semiconductor Page Industry ON Semiconductor Page

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Part Number Nearest Replacement Number Part Number Nearest Replacement Number

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC228A4FP MAC229A8FP 253, 474 MAC4DLMT4 MAC4DLMT4 252, 334
MAC228A6 MAC228A6 253, 470 MAC4DSM–1 MAC4DSM–1 252, 340

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC228A6FP

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC228A8

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC229A8FP

ÁÁÁÁÁÁÁÁ
MAC228A8

ÁÁÁÁ
253, 474
253, 470
MAC4DSMT4
MAC4DSN–1
MAC4DSMT4
MAC4DSN–1
252, 340
252, 340

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC228A8FP MAC229A8FP 253, 474 MAC4DSNT4 MAC4DSNT4 252, 340
MAC229–10 MAC228A10 253, 470 MAC4M MAC4M 253, 348

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC229–10FP

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC229–4

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC229A10FP

ÁÁÁÁÁÁÁÁ
MAC228A4

ÁÁÁÁ
253, 474
253, 470
MAC4N
MAC4SM
MAC4N
MAC4SM
253, 348
253, 353

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC229–4FP MAC229A8FP 253, 474 MAC4SN MAC4SN 253, 353

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC229–6 MAC228A6 253, 470 MAC8D MAC8D 253, 358
MAC229–6FP MAC229A8FP 253, 474 MAC8M MAC8M 253, 358

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC229–8

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC229–8FP

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC228A8

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC229A8FP
253, 470
253, 474
MAC8N
MAC8SD
MAC8N
MAC8SD
253, 358
253, 363

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC229A10 MAC228A10 253, 470 MAC8SM MAC8SM 253, 363
MAC229A10FP MAC229A10FP 253, 474 MAC8SN MAC8SN 253, 363

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC229A4

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC229A4FP

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC228A4

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC229A8FP
253, 470
253, 474
MAC97–4
MAC97–6
MAC97A4
MAC97A6
252, 425
252, 425

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC229A6 MAC228A6 253, 470 MAC97–8 MAC97–8 252, 425
MAC229A6FP MAC229A8FP 253, 474 MAC97A4 MAC97A4 252, 425

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC229A8FP

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC3030–8

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC229A8FP

ÁÁÁÁÁÁÁÁ
MAC210A8

ÁÁÁÁ
253, 474
254, 433
MAC97A6
MAC97A8
MAC97A6
MAC97A8
252, 425
252, 425

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC310–4 MAC12SM 254, 384 MAC97B4 MAC997B6 252, 483
MAC310–6 MAC12SM 254, 384 MAC97B6 MAC997B6 252, 483

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC310–8

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC310A4
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC12SM

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC12SM
ÁÁÁÁ
254, 384
254, 384
MAC97B8
MAC997A6
MAC997B8
MAC997A6
252, 483
252, 483

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC310A6 MAC12SM 254, 384 MAC997A8 MAC997A8 252, 483

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC310A8 MAC12SM 254, 384 MAC997B6 MAC997B6 252, 483
MAC320–10 MAC223A10 255, 457 MAC997B8 MAC997B8 252, 483

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC320–10FP

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC320–4

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC223A10FP

ÁÁÁÁÁÁÁÁ
MAC223A6

ÁÁÁÁ
255, 461
255, 457
MAC9D
MAC9M
MAC9D
MAC9M
253, 369
253, 369

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC320–4FP MAC223A6FP 255, 461 MAC9N MAC9N 253, 369
MAC320–6 MAC223A6 255, 457 MCR08BT1 MCR08BT1 249, 491

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC320–6FP

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC320–8

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC223A6FP

ÁÁÁÁÁÁÁÁ
MAC223A8

ÁÁÁÁ
255, 461
255, 457
MCR08DT1
MCR08MT1
MCR08MT1
MCR08MT1
249, 491
249, 491

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC320–8FP MAC223A8FP 255, 461 MCR100–3 MCR100–3 249, 566
MAC320A10 MAC223A10 255, 457 MCR100–4 MCR100–4 249, 566

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC320A10FP

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC320A4

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC223A10FP

ÁÁÁÁÁÁÁÁ
MAC223A6

ÁÁÁÁ
255, 461
255, 457
MCR100–6
MCR100–8
MCR100–6
MCR100–8
249, 566
249, 566

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC320A4FP MAC223A6FP 255, 461 MCR102 MCR100–3 249, 566
MAC320A6 MAC223A6 255, 457 MCR103 MCR100–3 249, 566

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC320A6FP

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC320A8
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC223A6FP

ÁÁÁÁÁÁÁÁ
MAC223A8
ÁÁÁÁ
255, 461
255, 457
MCR106–2
MCR106–3
MCR106–6
MCR106–6
249, 572
249, 572

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC320A8FP MAC320A8FP 255, 478 MCR106–4 MCR106–6 249, 572

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC321–10 MAC223A10 255, 457 MCR106–6 MCR106–6 249, 572
MAC321–4 MAC223A6 255, 457 MCR106–8 MCR106–8 249, 572

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC321–6

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC321–8

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC223A6

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC223A8

ÁÁÁÁ
255, 457
255, 457
MCR12D
MCR12DCMT4
MCR12D
MCR12DCMT4
250, 518
250, 522

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC4DCM–1 MAC4DCM–1 252, 320 MCR12DCNT4 MCR12DCNT4 250, 522
MAC4DCMT4 MAC4DCMT4 252, 320 MCR12DSMT4 MCR12DSMT4 250, 528

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC4DCN–1

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC4DCNT4

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC4DCN–1

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC4DCNT4
252, 320
252, 320
MCR12DSNT4
MCR12LD
MCR12DSNT4
MCR12LD
250, 528
250, 534

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC4DHM–1 MAC4DHM–1 252, 328 MCR12LM MCR12LM 250, 534
MAC4DHMT4 MAC4DHMT4 252, 328 MCR12LN MCR12LN 250, 534

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC4DLM–1
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC4DLM–1 252, 334 MCR12M MCR12M 250, 518

Bold items are a form, fit, and function replacement for the industry part number, although some very minor differences may exist.

http://onsemi.com
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ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
Industry ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
ON Semiconductor Page Industry ON Semiconductor Page

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Part Number Nearest Replacement Number Part Number Nearest Replacement Number

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MCR12N MCR12N 250, 518 MCR703AT4 MCR703AT4 249, 597
MCR16D MCR16N 251, 538 MCR704A1 MCR706AT4 249, 597

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR16M

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR16N

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR16N

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR16N

ÁÁÁÁ
251, 538
251, 538
MCR704ARL
MCR704AT4
MCR704AT4
MCR704AT4
249, 597
249, 597

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MCR218–10 MCR12N 250, 518 MCR706A MCR706AT4 249, 597
MCR218–10FP MCR218–10FP 250, 579 MCR706A1 MCR708AT4 249, 597

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR218–2

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR218–2FP

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR218–2

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MCR218–6FP
250, 575
250, 579
MCR706ARL
MCR706AT4
MCR706AT4
MCR706AT4
249, 597
249, 597

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MCR218–3 MCR218–4 250, 575 MCR708A MCR708AT4 249, 597

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MCR218–4 MCR218–4 250, 575 MCR708A1 MCR708AT4 249, 597
MCR218–4FP MCR218–6FP 250, 579 MCR708AT4 MCR708AT4 249, 597

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR218–6

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR218–6FP

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR218–6

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MCR218–6FP
250, 575
250, 579
MCR716T4
MCR718RL
MCR716T4
MCR718T4
249, 602
249, 602

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MCR218–8 MCR12M 250, 518 MCR718T4 MCR718T4 249, 602
MCR218–8FP MCR218–10FP 250, 579 MCR72–2 MCR72–3 250, 563

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR22–2

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR22–3

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR22–6

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR22–6

ÁÁÁÁ
249, 543
249, 543
MCR72–3
MCR72–4
MCR72–3
MCR72–6
250, 563
250, 563

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MCR22–4 MCR22–6 249, 543 MCR72–6 MCR72–6 250, 563
MCR225–10FP MCR225–10FP 251, 584 MCR72–8 MCR72–8 250, 563

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR225–2FP

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR225–4FP

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MCR225–8FP

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MCR225–8FP
251, 584
251, 584
MCR8D
MCR8DCMT4
MCR8M
MCR8DCMT4
250, 510
250, 499

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MCR225–6FP MCR225–8FP 251, 584 MCR8DCNT4 MCR8DCNT4 250, 499
MCR225–8FP MCR225–8FP 251, 584 MCR8DSMT4 MCR8DSMT4 250, 504

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR22–6

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR22–8
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR22–6

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR22–8
ÁÁÁÁ
249, 543
249, 543
MCR8DSNT4
MCR8M
MCR8DSNT4
MCR8M
250, 504
250, 510

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MCR25D MCR25D 251, 550 MCR8N MCR8N 250, 510

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MCR25M MCR25M 251, 550 MCR8SD MCR8SD 250, 514
MCR25N MCR25N 251, 550 MCR8SM MCR8SM 250, 514

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR264–10

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR264–4

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MCR265–10

ÁÁÁÁÁÁÁÁ
MCR264–4

ÁÁÁÁ
251, 593
251, 589
MCR8SN
MKP1V120
MCR8SN
MKP1V120RL
250, 514
256, 607

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MCR264–6 MCR264–6 251, 589 MKP1V120RL MKP1V120RL 256, 607
MCR264–8 MCR264–8 251, 589 MKP1V130 MKP1V130RL 256, 607

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR265–10

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR265–2

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MCR265–10

ÁÁÁÁÁÁÁÁ
MCR265–4

ÁÁÁÁ
251, 593
251, 593
MKP1V130RL
MKP1V160
MKP1V130RL
MKP1V160
256, 607
256, 607

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MCR265–4 MCR265–4 251, 593 MKP1V160RL MKP1V160RL 256, 607
MCR265–6 MCR265–6 251, 593 MKP1V240 MKP1V240 256, 607

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR265–8

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR310–10

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR265–8

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR72–8

ÁÁÁÁ
251, 593
250, 563
MKP1V240RL
MKP3V110
MKP1V240RL
MKP3V120RL
256, 607
256, 611

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MCR310–2 MCR12DSMT4 250, 528 MKP3V120 MKP3V120 256, 611
MCR310–3 MCR12DSMT4 250, 528 MKP3V120RL MKP3V120RL 256, 611

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR310–4

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR310–6
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MCR12DSMT4

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MCR12DSMT4
250, 528
250, 528
MKP3V130
MKP3V240
MKP3V120RL
MKP3V240
256, 611
256, 611

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MCR310–8 MCR12DSMT4 250, 528 MKP3V240RL MKP3V240RL 256, 611

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MCR506–2 MCR106–6 249, 572 MKP9V160RL MKP1V160RL 256, 607
MCR506–3 MCR106–6 249, 572 MMT05B230T3 MMT05B230T3 256, 615

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR506–4

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR506–6

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR106–6

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR106–6

ÁÁÁÁ
249, 572
249, 572
MMT05B260T3
MMT05B310T3
MMT05B260T3
MMT05B310T3
256, 615
256, 615

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MCR506–8 MCR106–8 249, 572 MMT10B230T3 MMT10B230T3 256, 621
MCR68–2 MCR68–2 250, 555 MMT10B260T3 MMT10B260T3 256, 621

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR69–2

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR69–3

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR69–2

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR69–3

ÁÁÁÁ
251, 559
251, 559
MMT10B310T3
P0102AN
MMT10B310T3
MCR08MT1
256, 621
249, 491

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MCR703A MCR703AT4 249, 597 P0102BN MCR08MT1 249, 491
MCR703A1 MCR703AT4 249, 597 P0102CN MCR08BT1 249, 491

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR703ARL
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MCR703AT4 249, 597 P0102DN MCR08BT1 249, 491

Bold items are a form, fit, and function replacement for the industry part number, although some very minor differences may exist.

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ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
Industry ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
ON Semiconductor Page Industry ON Semiconductor Page

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Part Number Nearest Replacement Number Part Number Nearest Replacement Number

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
P102–AA MCR100–3 249, 566 Q5008L4 MAC218A10FP 253, 453
P102–BA MCR100–4 249, 566 Q5008R4 MAC228A8 253, 470

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
P102–CA

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
P102–DA

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–6

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–6

ÁÁÁÁ
249, 566
249, 566
Q5010F51
Q5010L5
MAC15A10FP
MAC210A8FP
255, 394
254, 438

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
P2300SA MMT05B230T3 256, 615 Q5010R5 MAC210A8 254, 433
P2300SB MMT10B230T3 256, 621 Q5015R5 MAC15–8 255, 389

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
P2300SC

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
P2600SA

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MMT10B230T3

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MMT05B260T3
256, 621
256, 615
Q501E3
Q501E4
MAC97–8
MAC97–8
252, 425
252, 425

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
P2600SB MMT10B260T3 256, 621 Q5025R5 MAC223A8 255, 457

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
P2600SC MMT10B260T3 256, 621 Q5X8E3 MAC97–8 252, 425
P3100SA MMT05B310T3 256, 615 Q5X8E4 MAC97–8 252, 425

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
P3100SB

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
P3100SC

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MMT10B310T3

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MMT10B310T3
256, 621
256, 621
Q6004F41
Q6006F51
MAC4SM
MAC9M
253, 353
253, 369

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Q2004F41 MAC4SM 253, 353 Q6006L5 MAC218A10FP 253, 453
Q2006F41 MAC228A4 253, 470 Q6006R5 MAC9M 253, 369

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
Q2006L4

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
Q2006R4

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC218A10FP

ÁÁÁÁÁÁÁÁ
MAC228A4

ÁÁÁÁ
253, 453
253, 470
Q6008F51
Q6008L5
MAC9M
MAC218A10FP
253, 369
253, 453

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Q2008F41 MAC228A4 253, 470 Q6008R5 MAC9M 253, 369
Q2008L4 MAC218A10FP 253, 453 Q6010F51 MAC15A10FP 255, 394

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
Q2008R4

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
Q2010F51

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC228A4

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC210A8

ÁÁÁÁ
253, 470
254, 433
Q6010L5
Q6010R5
MAC210A8FP
MAC210A8
254, 438
254, 433

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Q2010L5 MAC210A8FP 254, 438 Q6015R5 MAC15–8 255, 389
Q2010R5 MAC210A8 254, 433 Q601E3 MAC97–8 252, 425

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
Q20110F51

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
Q2015L5
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC15A8FP

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC15A6FP
255, 394
255, 394
Q601E4
Q6025R5
MAC97–8
MAC223A8
252, 425
255, 457

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Q2015R5 MAC15–8 255, 389 Q6X8E3 MAC97–8 252, 425

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Q201E3 MAC97–8 252, 425 Q6X8E4 MAC97–8 252, 425
Q201E4 MAC97–8 252, 425 Q7006L5 MAC218A10FP 253, 453

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
Q2025R5

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
Q2X8E3

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC223A6

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC97–8

ÁÁÁÁ
255, 457
252, 425
Q7006R5
Q7008L5
MAC9N
MAC218A10FP
253, 369
253, 453

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Q2X8E4 MAC97–8 252, 425 Q7008R5 MAC9N 253, 369
Q4004F41 MAC4SM 253, 353 Q7010L5 MAC210A10FP 254, 438

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
Q4006F41

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
Q4006L4

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC228A6

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC218A10FP
253, 470
253, 453
Q7010R5
Q7015R5
MAC210A10
MAC15–10
254, 433
255, 389

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Q4006R4 MAC228A6 253, 470 Q7025R5 MAC223A10 255, 457
Q4008F41 MAC228A6 253, 470 Q8006L5 MAC218A10FP 253, 453

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
Q4008L4

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
Q4008R4

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC218A10FP

ÁÁÁÁÁÁÁÁ
MAC228A6

ÁÁÁÁ
253, 453
253, 470
Q8006R5
Q8008L5
MAC9N
MAC218A10FP
253, 369
253, 453

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Q4010F51 MAC210A8 254, 433 Q8008R5 MAC9N 253, 369
Q4010L5 MAC210A8FP 254, 438 Q8010L5 MAC210A10FP 254, 438

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
Q4010R5

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
Q40110F51
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC210A8

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC15A8FP
254, 433
255, 394
Q8010R5
Q8015R5
MAC210A10
MAC15–10
254, 433
255, 389

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Q4015L5 MAC15A6FP 255, 394 Q8025R5 MAC223A10 255, 457

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Q4015R5 MAC15–8 255, 389 S0402BH MCR8SD 250, 514
Q401E3 MAC97–8 252, 425 S0402DH MCR8SD 250, 514

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
Q401E4

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
Q4925R5

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC97–8

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC223A6

ÁÁÁÁ
252, 425
255, 457
S0402MH
S0402NH
MCR8SM
MCR8SN
250, 514
250, 514

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Q4X8E3 MAC97–8 252, 425 S0506F1 MCR8M 250, 510
Q4X8E4 MAC97–8 252, 425 S0506FS21 MCR8SD 250, 514

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
Q5004F41

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
Q5006F41

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC4SM

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC228A8

ÁÁÁÁ
253, 353
253, 470
S0506FS31
S0506L
MCR8SD
MCR218–6FP
250, 514
250, 579

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Q5006L4 MAC218A10FP 253, 453 S0508F1 MCR12D 250, 518
Q5006R4 MAC228A8 253, 470 S0508FS21 MCR8SD 250, 514

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
Q5008F41
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC228A8
ÁÁÁÁ 253, 470 S0508FS31 MCR8SD 250, 514

Bold items are a form, fit, and function replacement for the industry part number, although some very minor differences may exist.

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ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁÁ
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ÁÁÁÁÁ
Industry ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
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ÁÁÁÁ
ON Semiconductor Page Industry ON Semiconductor Page

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Part Number Nearest Replacement Number Part Number Nearest Replacement Number

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
S0508L MCR218–6FP 250, 579 S2010F1 MCR12LD 250, 534
S0508R MCR12D 250, 518 S2010FS21 MCR72–6 250, 563

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S0510F1

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S0510FS21

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR12LD

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR72–3

ÁÁÁÁ
250, 534
250, 563
S2010FS31
S2010L
MCR72–6
MCR225–8FP
250, 563
251, 584

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
S0510FS31 MCR72–3 250, 563 S2010R MCR12LD 250, 534
S0510L MCR225–8FP 251, 584 S2012R MCR12LD 250, 534

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S0510R

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S0512R

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR12LD

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR12LD

ÁÁÁÁ
250, 534
250, 534
S2015L
S2016R
MCR225–8FP
2N6402
251, 584
251, 293

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
S0515L MCR225–8FP 251, 584 S2020L MCR225–8FP 251, 584

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
S0516R 2N6400 251, 293 S2025L MCR225–8FP 251, 584
S0520L MCR225–8FP 251, 584 S2025R MCR25D 251, 550

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S0525L

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S0525R

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MCR225–8FP

ÁÁÁÁÁÁÁÁ
MCR25D

ÁÁÁÁ
251, 584
251, 550
S2040R
S2055R
MCR264–4
MCR265–4
251, 589
251, 593

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
S0540R MCR264–4 251, 589 S2800A MCR12M 250, 518
S0555R MCR265–4 251, 593 S2800B MCR12M 250, 518

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S0602BH

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S0602DH

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR8SD

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR8SD

ÁÁÁÁ
250, 514
250, 514
S2800D
S2800F
MCR12M
MCR12M
250, 518
250, 518

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
S0602MH MCR8SM 250, 514 S2800M MCR12M 250, 518
S0602NH MCR8SN 250, 514 S2800N MCR12N 250, 518

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S0802BH

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S0802DH

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR8SD

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR8SD

ÁÁÁÁ
250, 514
250, 514
S4006F1
S4006FS21
MCR8M
MCR8SD
250, 510
250, 514

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
S0802MH MCR8SM 250, 514 S4006FS31 MCR8SD 250, 514
S0802NH MCR8SN 250, 514 S4006L MCR218–6FP 250, 579

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S1006F1

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S1006FS21
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR8M

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR8SD
ÁÁÁÁ
250, 510
250, 514
S4008F1
S4008FS21
MCR12D
MCR8SD
250, 518
250, 514

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
S1006FS31 MCR8SD 250, 514 S4008FS31 MCR8SD 250, 514

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
S1006L MCR218–6FP 250, 579 S4008L MCR218–6FP 250, 579
S1008F1 MCR12D 250, 518 S4008R MCR12D 250, 518

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S1008FS21

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S1008FS31

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR8SD

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR8SD

ÁÁÁÁ
250, 514
250, 514
S4010F1
S4010FS21
MCR12LD
MCR72–6
250, 534
250, 563

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
S1008L MCR218–6FP 250, 579 S4010FS31 MCR72–6 250, 563
S1008R MCR12D 250, 518 S4010L MCR225–8FP 251, 584

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S1010F1

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S1010FS21

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR12LD

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR72–6

ÁÁÁÁ
250, 534
250, 563
S4010R
S4012R
MCR12LD
MCR12LD
250, 534
250, 534

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
S1010FS31 MCR72–6 250, 563 S40156R 2N6403 251, 293
S1010L MCR225–8FP 251, 584 S4015L MCR225–8FP 251, 584

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S1010R

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S1012R

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR12LD

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR12LD

ÁÁÁÁ
250, 534
250, 534
S4020L
S4025L
MCR225–8FP
MCR225–8FP
251, 584
251, 584

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
S1015L MCR225–8FP 251, 584 S4025R MCR25D 251, 550
S1016R 2N6401 251, 293 S4040R MCR264–6 251, 589

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S1020L

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S1025L
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MCR225–8FP

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MCR225–8FP
251, 584
251, 584
S4055R
S6006F1
MCR265–4
MCR8M
251, 593
250, 510

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
S1025R MCR25D 251, 550 S6006FS21 MCR8SM 250, 514

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
S1040R MCR264–4 251, 589 S6006FS31 MCR8SM 250, 514
S1055R MCR265–4 251, 593 S6006L MCR218–10FP 250, 579

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S2006F1

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S2006FS21

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR8M

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR8SD

ÁÁÁÁ
250, 510
250, 514
S6008F1
S6008FS21
MCR12M
MCR8SM
250, 518
250, 514

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
S2006FS31 MCR8SD 250, 514 S6008FS31 MCR8SM 250, 514
S2006L MCR218–6FP 250, 579 S6008L MCR218–10FP 250, 579

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S2008F1

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S2008FS21

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR12D

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR8SD

ÁÁÁÁ
250, 518
250, 514
S6008R
S6010F1
MCR12M
MCR12LM
250, 518
250, 534

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
S2008FS31 MCR8SD 250, 514 S6010FS21 MCR72–8 250, 563
S2008L MCR218–6FP 250, 579 S6010FS31 MCR72–8 250, 563

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S2008R
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR12D
ÁÁÁÁ 250, 518 S6010L MCR225–8FP 251, 584

Bold items are a form, fit, and function replacement for the industry part number, although some very minor differences may exist.

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ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
Industry ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
ON Semiconductor Page Industry ON Semiconductor Page

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Part Number Nearest Replacement Number Part Number Nearest Replacement Number

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
S6010R MCR12LM 250, 534 SM8GZ47 MAC8D 253, 358
S6012R MCR12LM 250, 534 SM8J45 MAC8M 253, 358

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S6015L

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S6016R

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MCR225–8FP

ÁÁÁÁÁÁÁÁ
2N6404

ÁÁÁÁ
251, 584
251, 293
SM8JZ47
SM8LZ47
MAC8M
MAC229A10FP
253, 358
253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
S6020L MCR225–8FP 251, 584 SMO8G43 MAC997B6 252, 483
S6025L MCR225–8FP 251, 584 SMP100–140 MMT10B230T3 256, 621

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S6025R

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S6040R

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR25M

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR264–8

ÁÁÁÁ
251, 550
251, 589
SMP100–200
SMP100–230
MMT10B260T3
MMT10B260T3
256, 621
256, 621

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
S6055R MCR265–8 251, 593 SMP100–270 MMT10B310T3 256, 621

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
S8006L MCR218–10FP 250, 579 SMTBJ170A MMT05B230T3 256, 615
S8008L MCR218–10FP 250, 579 SMTBJ170B MMT10B230T3 256, 621

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S8008R

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S8010L

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR12N

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MCR225–10FP
250, 518
251, 584
SMTBJ200A
SMTBJ200B
MMT05B260T3
MMT10B260T3
256, 615
256, 621

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
S8010R MCR12LN 250, 534 SMTPA180 MMT05B230T3 256, 615
S8012R MCR12LN 250, 534 SMTPA200 MMT05B260T3 256, 615

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S8015L

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S8016R

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MCR225–10FP

ÁÁÁÁÁÁÁÁ
2N6405

ÁÁÁÁ
251, 584
251, 293
SMTPA220
SMTPA270
MMT05B260T3
MMT05B310T3
256, 615
256, 615

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
S8020L MCR225–10FP 251, 584 T106A1 C106B 249, 303
S8025L MCR225–10FP 251, 584 T106B1 C106B 249, 303

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S8025R

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
S8055R

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR25N

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MCR265–10
251, 550
251, 593
T106C1
T106D1
C106D
C106D
249, 303
249, 303

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
SC141D MAC210A8 254, 433 T106E1 C106M 249, 303
SC146D MAC15A6 255, 389 T106F1 C106B 249, 303

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
SF10G41A

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
SF10J41A
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6403

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2N6404
ÁÁÁÁ
251, 293
251, 293
T106M1
T107A1
C106M
C106B
249, 303
249, 303

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
SF5G41A MCR8SD 250, 514 T107B1 C106B 249, 303

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
SF5G42 MCR8SD 250, 514 T107C1 C106D 249, 303
SF5GZ47 MCR218–6FP 250, 579 T107D1 C106D 249, 303

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
SF5J41A

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
SF5J42

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR8SM

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR8SM

ÁÁÁÁ
250, 514
250, 514
T107E1
T107F1
C106M
C106B
249, 303
249, 303

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
SF5JZ47 MCR218–10FP 250, 579 T107M1 C106M 249, 303
SF8G41A MCR72–6 250, 563 T2322B T2322B 252, 627

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
SF8GZ47

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
SF8J41A

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR72–6

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR72–8

ÁÁÁÁ
250, 563
250, 563
T2322D
T2322M
2N6073A
2N6075A
252, 272
252, 272

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
SF8JZ47 MCR72–8 250, 563 T2323B T2322B 252, 627
SFOR5J43 MCR100–8 249, 566 T2323D 2N6073A 252, 272

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
SFORG43

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
SM12G45

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR100–6

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC12D

ÁÁÁÁ
249, 566
254, 374
T2323M
T2500B
2N6075A
T2500D
252, 272
253, 630

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
SM12GZ47 MAC212A6FP 254, 443 T2500BFP MAC229A8FP 253, 474
SM12J45 MAC12M 254, 374 T2500D T2500D 253, 630

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
SM12JZ47

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
SM16G45
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC212A8FP

ÁÁÁÁÁÁÁÁ
MAC16CD
ÁÁÁÁ
254, 443
255, 410
T2500DFP
T2500M
MAC229A8FP
MAC8M
253, 474
253, 358

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
SM16GZ47 MAC16CD 255, 410 T2500MFP MAC229A8FP 253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
SM16J45 MAC16CM 255, 410 T2500N MAC8N 253, 358
SM16JZ47 MAC16CM 255, 410 T2500NFP MAC229A10FP 253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
SM1G43

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
SM1J43

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC997A6

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC997A8

ÁÁÁÁ
252, 483
252, 483
T2800B
T2800D
T2800D
T2800D
253, 633
253, 633

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
SM3J45 MAC4M 253, 348 T2800M 2N6344 253, 278
SM3JZ47 MAC4M 253, 348 T405–400B MAC4DLMT4 252, 334

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
SM6G45

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
SM6GZ47A

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC8D

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC229A8FP
253, 358
253, 474
T405–400T
T405–400W
MAC8SD
MAC229A8FP
253, 363
253, 474

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
SM6J45 MAC8M 253, 358 T405–600B MAC4DLMT4 252, 334
SM6JZ47A MAC229A8FP 253, 474 T405–600T MAC8SM 253, 363

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
SM8G45
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC8D
ÁÁÁÁ 253, 358 T405–600W MAC229A8FP 253, 474

Bold items are a form, fit, and function replacement for the industry part number, although some very minor differences may exist.

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ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
Industry ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
ON Semiconductor Page Industry ON Semiconductor Page

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Part Number Nearest Replacement Number Part Number Nearest Replacement Number

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
T410–400B MAC4DSMT4 252, 340 TS420–700T MCR8SN 250, 514
T410–400T MAC4SM 253, 353 TS820–400B MCR8DSMT4 250, 504

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
T410–400W

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
T410–600B

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC229A8FP

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC4DSMT4
253, 474
252, 340
TS820–400T
TS820–600B
MCR8SD
MCR8DSMT4
250, 514
250, 504

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
T410–600T MAC4SM 253, 353 TS820–600T MCR8SM 250, 514
T410–600W MAC229A8FP 253, 474 TS820–700B MCR8DSNT4 250, 504

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
T410–700B

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
T410–700T

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC4DSNT4

ÁÁÁÁÁÁÁÁ
MAC4SN

ÁÁÁÁ
252, 340
253, 353
TS820–700T
TSMBJ0516C
MCR8SN
MMT05B230T3
250, 514
256, 615

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
T410–700W MAC229A10FP 253, 474 TSMBJ0518C MMT05B230T3 256, 615

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
T410–800B MAC4DSNT4 252, 340 TSMBJ0522C MMT05B260T3 256, 615
T410–800T MAC4SN 253, 353 TSMBJ0524C MMT05B310T3 256, 615

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
T410–800W

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
T435–400B

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC229A10FP

ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC4DCMT4
253, 474
252, 320
TSMBJ0527C
TSMBJ1016C
MMT05B310T3
MMT10B230T3
256, 615
256, 621

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
T435–400T MAC8SD 253, 363 TSMBJ1018C MMT10B230T3 256, 621
T435–400W MAC229A8FP 253, 474 TSMBJ1022C MMT10B260T3 256, 621

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
T435–600B

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
T435–600T

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC4DCMT4

ÁÁÁÁÁÁÁÁ
MAC8SM

ÁÁÁÁ
252, 320
253, 363
TSMBJ1024C
TSMBJ1027C
MMT10B310T3
MMT10B310T3
256, 621
256, 621

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
T435–600W MAC229A8FP 253, 474 X00602MA 1AA2 MCR100–8 249, 566
T435–700B MAC4DCNT4 252, 320 X00602MA 2AL2 MCR100–8 249, 566

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
T435–700T

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
T435–700W

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC8SN

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAC229A10FP
253, 363
253, 474
X0202BA
X0202DA
MCR22–6
MCR22–6
249, 543
249, 543

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
T435–800B MAC4DCNT4 252, 320 X0202MA MCR22–8 249, 543
T435–800T MAC8SN 253, 363 X0203BA MCR22–6 249, 543

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
T435–800W

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
TCR22–2
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
MAC229A10FP

ÁÁÁÁÁÁÁÁ
MCR22–6
ÁÁÁÁ
253, 474
249, 543
X0203DA
X0203MA
MCR22–6
MCR22–8
249, 543
249, 543

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
TCR22–3 MCR22–6 249, 543 Z00607DA MAC997A8 252, 483

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
TCR22–4 MCR22–6 249, 543 Z00607MA MAC997A6 252, 483
TCR22–6 MCR22–6 249, 543 Z0103DA MAC997B6 252, 483

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
TCR22–8

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
TIC116D

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR22–8

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR8SD

ÁÁÁÁ
249, 543
250, 514
Z0103MA
Z0107DA
MAC997B8
MAC997A6
252, 483
252, 483

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
TIC116M MCR8SM 250, 514 Z0107MA MAC997A8 252, 483
TIC116N MCR8SN 250, 514 Z0109DA MAC997A6 252, 483

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
TIC126D

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
TIC126M

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR12D

ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MCR12M

ÁÁÁÁ
250, 518
250, 518
Z0109DN
Z0109MA
MAC08MT1
MAC997A8
252, 311
252, 483

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
TIC126N MCR12N 250, 518 Z0109MN MAC08MT1 252, 311
TIC236N MAC12HCN 254, 379 Z0110DN MAC08MT1 252, 311

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
TIC246D

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
TIC246M

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
MAC16HCD
MAC16HCMÁÁÁÁ 255, 420
255, 420
Z0110MN MAC08MT1 252, 311

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
TIC246N MAC16HCN 255, 420
TN1215–600B MCR12DCMT4 250, 522

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
TN1215–600G

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
TN1215–800G
ÁÁÁÁÁ
MCR8DCMT4
MCR8DCNT4
250, 499
250, 499

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
TN41A 2N6027 256, 265

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
TN41B 2N6028 256, 265
TP30–100 MKP1V120RL 256, 607

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
TP30–120

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
TP30–130

ÁÁÁÁÁ
MKP1V130RL
MKP1V160RL
256, 607
256, 607

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
TP30–180 MKP1V240RL 256, 607
TP30–200 MKP1V240RL 256, 607

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
TS1220–600B

ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
TS420–400B

ÁÁÁÁÁ
MCR12DSMT4
MCR706AT4
250, 528
249, 597

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
TS420–400T MCR8SD 250, 514
TS420–600B MCR706AT4 249, 597

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
TS420–600T
ÁÁÁÁÁ MCR8SM 250, 514

Bold items are a form, fit, and function replacement for the industry part number, although some very minor differences may exist.

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 ON SEMICONDUCTOR MAJOR WORLDWIDE SALES OFFICES
UNITED STATES CANADA
ALABAMA
Huntsville . . . . . . . . . . . . . . . . . . (256)464–6800
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INTERNATIONAL (continued)
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or . . . . . . . . . . . . . . . . . . . . . . . . . 34(1)457–8254
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Stockholm . . . . . . . . . . . . . . . . . 46(8)734–8800
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UNITED KINGDOM
Aylesbury . . . . . . . . . . . . . . . 44 1 (296)395252
 ON SEMICONDUCTOR STANDARD DOCUMENT TYPE DEFINITIONS

DATA SHEET CLASSIFICATIONS

A Data Sheet is the fundamental publication for each individual product/device, or series of products/devices, containing detailed
parametric information and any other key information needed in using, designing–in or purchasing of the product(s)/device(s) it describes.
Below are the three classifications of Data Sheet: Product Preview; Advance Information; and Fully Released Technical Data
PRODUCT PREVIEW
A Product Preview is a summary document for a product/device under consideration or in the early stages of development. The
Product Preview exists only until an “Advance Information” document is published that replaces it. The Product Preview is often
used as the first section or chapter in a corresponding reference manual. The Product Preview displays the following disclaimer at
the bottom of the first page: “This document contains information on a product under development. ON Semiconductor reserves the
right to change or discontinue this product without notice.”
ADVANCE INFORMATION
The Advance Information document is for a device that is NOT fully qualified, but is in the final stages of the release process,
and for which production is eminent. While the commitment has been made to produce the device, final characterization and
qualification may not be complete. The Advance Information document is replaced with the “Fully Released Technical Data”
document once the device/part becomes fully qualified. The Advance Information document displays the following disclaimer at
the bottom of the first page: “This document contains information on a new product. Specifications and information herein are subject
to change without notice.”
FULLY RELEASED TECHNICAL DATA
The Fully Released Technical Data document is for a product/device that is in full production (i.e., fully released). It replaces the
Advance Information document and represents a part that is fully qualified. The Fully Released Technical Data document is virtually
the same document as the Product Preview and the Advance Information document with the exception that it provides information
that is unavailable for a product in the early phases of development, such as complete parametric characterization data. The Fully
Released Technical Data document is also a more comprehensive document than either of its earlier incarnations. This document
displays no disclaimer, and while it may be informally referred to as a “data sheet,” it is not labeled as such.
DATA BOOK
A Data Book is a publication that contains primarily a collection of Data Sheets, general family and/or parametric information,
Application Notes and any other information needed as reference or support material for the Data Sheets. It may also contain cross reference
or selector guide information, detailed quality and reliability information, packaging and case outline information, etc.
APPLICATION NOTE
An Application Note is a document that contains real–world application information about how a specific ON Semiconductor
device/product is used, or information that is pertinent to its use. It is designed to address a particular technical issue. Parts and/or software
must already exist and be available.
SELECTOR GUIDE
A Selector Guide is a document published, generally at set intervals, that contains key line–item, device–specific information for
particular products or families. The Selector Guide is designed to be a quick reference tool that will assist a customer in determining the
availability of a particular device, along with its key parameters and available packaging options. In essence, it allows a customer to quickly
“select” a device. For detailed design and parametric information, the customer would then refer to the device’s Data Sheet. The Master
Components Selector Guide (SG388/D) is a listing of ALL currently available ON Semiconductor devices.
REFERENCE MANUAL
A Reference Manual is a publication that contains a comprehensive system or device–specific descriptions of the structure and function
(operation) of a particular part/system; used overwhelmingly to describe the functionality or application of a device, series of devices or
device category. Procedural information in a Reference Manual is limited to less than 40 percent (usually much less).
HANDBOOK
A Handbook is a publication that contains a collection of information on almost any give subject which does not fall into the Reference
Manual definition. The subject matter can consist of information ranging from a device specific design information, to system design, to
quality and reliability information.
ADDENDUM
A documentation Addendum is a supplemental publication that contains missing information or replaces preliminary information in the
primary publication it supports. Individual addendum items are published cumulatively. The Addendum is destroyed upon the next revision
of the primary document.

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 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further
notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does
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special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different
applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
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authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other
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products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and
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injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of
the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

NORTH AMERICA Literature Fulfillment: CENTRAL/SOUTH AMERICA:
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Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
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EUROPE: LDC for ON Semiconductor - European Support JAPAN: ON Semiconductor, Japan Customer Focus Center
German Phone: (+1) 303-308-7140 (M-F 1:00pm to 5:00pm Munich Time) 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031
Email: ONlit-german@hibbertco.com Phone: 81-3-5740-2745
French Phone: (+1) 303-308-7141 (M-F 1:00pm to 5:00pm Toulouse Time) Email: r14525@onsemi.com
Email: ONlit-french@hibbertco.com
English Phone: (+1) 303-308-7142 (M-F 12:00pm to 5:00pm UK Time) ON Semiconductor Website: http://onsemi.com
Email: ONlit@hibbertco.com

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