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Risk priority number for understanding the severity of photovoltaic failure modes and
their impacts on performance degradation
Pramod Rajput, Maria Malvoni, Nallapaneni Manoj Kumar, O.S. Sastry, G.N. Tiwari
PII: S2214-157X(19)30408-3
DOI: https://doi.org/10.1016/j.csite.2019.100563
Reference: CSITE 100563
Please cite this article as: P. Rajput, M. Malvoni, N.M. Kumar, O.S. Sastry, G.N. Tiwari, Risk
priority number for understanding the severity of photovoltaic failure modes and their impacts on
performance degradation, Case Studies in Thermal Engineering (2019), doi: https://doi.org/10.1016/
j.csite.2019.100563.
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18 modules up to 20-25 years; it becomes possible after understanding the failure mode and
20 module throughout the long-term outdoor exposure. The main objective of the present study
21 is to identify the failure mechanism and failure mode of solar PV modules and their impact
23 highest performance losses at initial stage of outdoor exposure and a degradation drop-off of
24 0.014% per year. In this context, risk priority number (RPN) analysis is carried out to identify
25 the severity of the failure mode, which affect the system performance for c-Si technologies.
26 However, hot spot and de-lamination are degradation modes related to safety issue with lower
31 • Failure mechanism and failure mode of solar PV modules in real outdoor conditions.
32 • Several studies focused on the mono-crystalline PV modules over a period of 25 years are
33 considered to identify defects and failure modes.
34 • Impact of PV module defects and failure modes on its degradation is presented.
35 • Risk priority number (RPN) analysis for identifying the severity of the PV failure mode.
36
Nomenclature
a-Si Amorphous silicon
c-Si Crystalline silicon
CIS Copper Indium Gallium Selenide
EVA Ethylene vinyl acetate
FF Fill factor (%)
FMEA Failure mode effect analysis
IEC International electro technical commission
mc-Si Multi crystalline silicon
mono-Si Mono crystalline silicon
Pmax Power at maximum reference point (Watt)
RPN Risk priority number
Rsh Shunt resistance (Ω)
TCO Transparent conductive oxide
UV Ultra-violate
Isc Short circuit current (A)
37
38 1 Introduction
39 In present scenario the main challenge faced by PV industry is to make PV generated energy
40 cost effective. So, it is important to identify the influences under which the cost of PV
41 generated energy can be reduced. Such influences would gradually reduce the energy
42 generation potential form the PV module and lead to the issue of reliability. Long term
44 successful source of energy 0. Reliability of PV modules can be assessed by failure mode and
45 degradation mechanism during the outdoor operation. The failure mode and effect analysis
46 (FMEA) is a systematic procedure to identify the possible failure modes, their cause and
49 weaknesses in the system in such a way as to reduce failures with necessary modifications.
50 Similarly, Shrestha et al. 0 reveal that gridline interface and solder bond failure are dominant
51 defects in hot-dry desert climate. Which are mainly responsible for the power degradation
52 and safety issue. Several works applied the FMEA to investigate on the faults in solar PV
53 plants. Colli 0 has studied the failure mode and effect analysis of PV system installed at
54 Brookhaven National Laboratory by the Risk Priority Number (RPN) analysis that is one of
55 the inductive approaches to identify the severity of the failure mode. He reported that inverter
56 and ground system have a failure mode with the highest value of RPN. Kuitche et al. 0
57 studied the dominant failure mode on the basis of RPN analysis in the desert climatic
58 condition. They have found the dominant failure modes are solder bond fatigue and
60 mode and effective analysis of CIGS PV technology by outdoor monitoring and damp heat.
61 They have reported that the encapsulant discoloration is the main failure mode. Chaibi, Y. et
62 al. 0 reveal that the short and open circuit faults, partial shading and inverter failure are the
63 identical failure modes of the PV systems operating in the real operating condition which
64 degraded the performance of the system and causes for the system failure. Hacke et al. 0
65 assure that the elevated temperature, humidity ingress and voltage bias affect the performance
66 the PV system at the time of operation in outdoor condition. These failure modes are
67 responsible for degrade the system performance and failure cause. The failure modes of
68 components and subcomponents are the major causes of PV systems failure in the field
69 condition. Inverter block, leakage and earth fault are the major failure modes in respect of
70 overloads due to lack of insulation has the highest risk priority number 0. The arcing in the
71 components/subcomponents are the main issue arise in the PV systems due to loos
72 connection/over voltage and current flow, in this sequence ground fault also the main
73 problem due to the voltage difference. They decrease the systems performance and lifetime of
74 the PV modules over the period of the exposure 0. In the similar way Pillai and Rajasekar 0
75 have explained the ground fault, arcing and shadow are the sever defect found in the PV
76 system during the prolonged outdoor exposure in the field condition. Generally metallic part
77 of the PV module affects from the ground fault and arcing in PV system happens due to
78 discontinuity of current flow from corrosion of conductor, poor solder joint etc and shadow
80 The main objective of the present study is to overview defects occur in PV modules during
81 the outdoor operation and to quantify their impacts on the PV module performance. Past
82 studies concerning the c-Si module degradation after long term outdoor exposure are
83 collected and investigated in view of main failure modes. The latter, then, are prioritized in
84 accordance with severity and occurrence ranking by the RPN analysis to identify the defects
86 The paper has been summarized in the following sections: In section 2, the various defects,
89 presented. Information about risk priority analysis is provided in section 5. The conclusion of
93 discoloration, de-lamination and oxidation of front grid finger, anti-reflecting coating and
97 85◦C to 90◦C and above than EVA based encapsulant discoloration can be expected as shown
98 in Fig. 1. (a) 00. Acetic acid and acetaldehyde are two species that catalyze the degradation of
99 EVA, also corrosion of the metal and bus lines in c-Si PV module. However, 1-10%/year
100 performance loss quantitative and qualitative has been reported due to EVA discoloration
101 linked with UV world-wide location and site dependence 0. EVA discoloration reduces the
102 transmissivity of solar radiation into solar cell 0. Furthermore, Pmax of a PV module may be
103 decrease due to drop in Isc caused by a decrease in transmittance 0. Browning of fully EVA
104 encapsulated flat plate PV modules is based on conjugated in the EVA polymer backbone.
105 EVA discoloration effect Isc rather than the other electrical parameters 0. Further, Kempe et
106 al. 0 reported that strong sensitivity of non–silicon based encapsulant to light below 350nm is
107 demonstrated. Sinha et al. 0 described the EVA discoloration in 20 years old c-Si PV module
108 by dark lock in thermography technique. The results described that the significant reduction
109 in the fill factor due non uniform discoloration and increase in series resistance of the cell
110 contacts.
111
112 Fig. 1. a). EVA based encapsulant discoloration in PV module; b). Corrosion in the PV cell
113 interconnection ribbon.
114
117 circuit current at low illumination condition. But the series resistance strongly affects the
118 performance of the PV module in comparison to the shunt resistance [94]. Result, 1%
119 efficiency reduces due to influence of series and shunt resistance in a-Si thin film solar cell 0,
120 0, 0. Occurrence of the series and shunt resistance in metal part of the module dependent on
121 the conductivity of the metal. However, high quality of metal persists low resistance due to
122 low corrosion in metal and both resistance directly effect on fill factor 00,0. However, shunt
123 resistance depends on the solar irradiation, with the decrease of irradiation, shunt resistance
124 increases, so efficiency may be decreased 0. Yordanov et al., 0 describe the increase the
125 series resistance with the help of the ideality factor and open circuit voltage. With the
126 increase in the series resistance ideality factor increase by 5% with open circuit voltage. The
127 shunt resistance increases with decreasing the irradiation level. Ruschel et al. 0 reveal that the
128 shunt resistance with inverse slop of the different irradiation level.
130 After long term outdoor exposure, the conductivity of EVA material decreases. Result,
131 probability of moisture ingress through EVA increase and its effect on the metal part of PV
132 module 0,0. In the presence of moisture with a higher ambient temperature, humidity and
133 presence of sunlight with high system voltage create corrosion effect as shown in Fig. 1. (b) 0.
134 Corrosion occurs due to moisture ingress and sodium accumulation near the interface in
135 humid climatic condition in PV modules 0. In addition, the diffusivity of water decrease due
136 to oxidative degradation of the polymer, it leads to more amount or moisture ingress through
139 extensive survey of field return more than 90% of field failures were caused by corrosion and
140 interconnect breakage. Xiong et al., 0 explained that the main causes of corrosion in the c-Si
141 PV module is smooth oxide coating, looser structure and thinner Al-Si eutectic layer in the
144 Thermal imaging technique plays an important role in identifying the hot spot in specific
145 areas of the module. This technique is based on the joule heating effect due to poor contact
146 between the solar cells fixed in the module 0. This happens when any solar cell in the module
147 is damaged or either in shaded position 0. Occurrence of the hot spot in particular solar cell
148 depends on the wafer raw material and identify its reverse behavior; current limited and
149 voltage limited 0. However, high irradiation and temperature of PV module also causes hot
150 spot 0. In which, temperature of cell increase 10-20oC due to cracks in a similar solar cell and
151 area of hot solar cell is similar to area of shaded on it as shown in Fig. 2 0. Meyer and Dyk 0
152 found that after 130 sun hours the performance of the CIS module degraded more than 20%,
153 a-Si 60% and a-SiGe module degraded about13% due to the hot spot. Rajput et al. 0 conclude
154 that temperature of Glass/cell/polymer sheet PV module is 2-3oC higher than the
155 Glass/cell/glass PV module and temperature of the hot solar cell decrease with increase the
156 area of hot solar cells. Dimish et al., 0 reported that use of the MOSFET reduce the power
158
159 Fig. 2. Hot spot in mono-c-Si PV module.
160
162 De-lamination occurs between the two layers likely EVA and solar cell on the front surface
163 of PV module and second between EVA and back-sheet of PV module. De-lamination occurs
164 due to two major problems, the first one is that probability of light reflection will increase
165 and the second is moisture will be ingress through the front surface or either back surface as
166 shown in Fig. 3. (a) 0. In context, sodium ion develops between glass and TCO-glass
167 interface, its effect on the TCO and it leads to weak in less time. The result is that moisture
168 ingress through specific part and develops the de-lamination 0. De-lamination also depends
169 on the ambient temp and the material of the different additive layers such as EVA and back-
170 sheet 0.
171
172 Fig. 3. a). De-lamination in back-sheet of mono-c-Si PV module; b). Bubbles in back-sheet
173 of mono-c-Si PV module.
174 2.6 Effect of bubble
175 Bubble and de-lamination both depend on the detachment of the two layers, EVA-glass and
176 EVA-back-sheet. The difference between both is that affected area of the bubble is smaller
177 compared to the de-lamination. Bubble occurs due to overheating of solar cell and due to
178 chemical reaction takes place than some gases are released from the backside as shown in
179 Fig. 3. (b) 0. In context, CO2 (carbon dioxide), 2-ethyl hexanol and tert-butanol are involved
180 in the formation of bubble. These gases are released during the lamination process 0.
182 The thickness of the solar cell has reduced since earlier days. It reduces the quantity of
183 material used which reduced the cost of the PV module. But probability of the cell crack has
184 increased. Generally, the 6% of solar cells cracks during make a PV module. Crack in a solar
185 cell is a visual defect, but sometimes it does not detect from the bare eye.
186 Electroluminescence is the best technique to detect the cracks in solar cell less than 5µm. At
187 discoloration and pre-damage region near the bus-bar leads to defect like micro cracks 00.
188 Cracks depend on the crack orientation and most of the cases crack found parallel of bus-bar
189 0. In perspective, solar cell consistency and a possible carrier recombination path are losses
190 by cracks 0. Cracks occur in PV modules due to vibration, applied loads and thermal effects.
191 For the cyclic bending, crack can occurs where the busbars soldered onto silicon and
194 In past decade bypass diode had used between two solar cells to bypass the current in a PV
195 module. In earlier days, two bypass diodes are using between 36 solar cells in a PV module to
196 reduce the cost of PV module. It injections between two solar cells in the reverse bias
197 condition to prevent damage from localize heat of hot spot 0. Hot spot leads to shadow on the
198 solar cell and decrease the shunt resistance result decrease the short circuit current 0. In the
199 shaded position of the solar cell, short circuit current of the solar cell is less compared to the
200 string current, so the bypass diode bypass the current from one non hot spot solar cell to
201 another non hot spot solar cell through hot spot solar cell 0. Organic bypass diode can
204 PID is one of the sever defect occurs in PV module due to voltage difference from one end to
205 another end 0. Degradation rate of 52.43, 61.27, 66.67 and 72.5% has been found at the
206 negative end of the c-Si PV module after 9 years outdoor exposure in Malaysia due to
207 combined effect of outdoor exposure and 300, 400 and 600 V respectively 0. Hylský et al. 0
208 reported that size of solar cell and distribution of electric field intensity and negative voltage
209 potential are not directly related to degradation of mono crystalline silicon PV module after 7
210 years operation in the field condition. PID is mainly occurs due to leakage current, Na+ ions
211 present in the soda lime front glass to the active layer of the solar and grounded module
212 frame. It happens in the early morning when front glass in covered with due which increase
213 the conductivity of path of the leakage current 0. Polyethylene terephthalate (PET) back sheet
214 provide the PID due to partial discharge, which affect the lifetime of the PV module 0.
216 The degradation mode directly affects the PV system performance during the field condition
217 0. The studies concerning degradation rate can help to understand the behavior of c-Si based
218 PV plant in outdoor exposure conditions 00. Failure mode generates from different causes
219 and become different effect on performance of PV module. Previous works on long term
220 degradation analysis are collected to identify the performance decrease rate through time.
221 Table 1 summaries the degradation studies of different defects investigated for c-Si PV
222 module.
223 Table 1 Degradation studies summary of c-Si technologies PV module in accordance with
224 different defects.
S. no.
Failure mode Comments References
226 Berardone et al., 0 investigated the degradation rate of c-Si PV modules after 20 years
227 outdoor exposure in Italy. The degradation rate of c-Si PV modules found to be 0.24%/year.
228 Berman et al. 0 reported power output of brown modules has probably degraded at an average
229 rate of about 1%/year after five year outdoor exposure at Negev desert, Israel. A 10 kW PV
230 plant of c-Si PV modules was installed at Lugano, Switzerland, after 20 years outdoor
231 exposure the power decrease at the rate 0.53%/year 0. Han et al. 0 reveal that the c-Si PV
232 modules show 0.5%/year power degradation after 28 years of continuous outdoor exposure in
233 China. However, the degradation rate open-circuit voltage reported as 1.54%/year in same
234 field condition. Reis at el. 0 found that rate of power degradation of c-Si PV modules after 11
235 years continuous outdoor exposure was 0.4%/year of 9.2 kW PV system at the location in
236 Trinidad. Dunlop and Halton 0 reported 0.3%/year rate of power degradation after 22 years
237 prolong outdoor exposure of mc-Si modules. Sanchez-Friera 0 reported performance of c-Si
238 PV plant with capacity 2 kW, installed in Malaga, Spain. After 12 year’s outdoor exposure
239 the rate of power degradation found to be 0.7%/year. Quintana et al. 0 found the degradation
240 rate of individual c-Si module is 0.5%/year after 20 years of outdoor exposure, which is less
241 the system level 2.5%/year in Utah USA. Sakamoto and Oshiro 0 studied about 2000 (mono-
242 Si and mc-Si) PV modules, in which 150 modules have <0.5%/year power degradation rate
243 due to losses in the FF and Isc after 10 years exposure. Chandel et al. 0 reported 1.4%/year
244 average rate of power degradation for PV generator after 28 years outdoor exposure of sc-Si
245 PV modules for western Himalayan, India. Jordan and Kurtz 00 recently reviewed the
246 degradation rate of field tested module for the duration of the last 40 years and concluded that
247 the average rate of power degradation is found to be 0.8%/year. The degradation study of 22
248 mono-c-Si PV modules after 16 years outdoor exposure has been performed by Quansah and
249 Adaramola. The annual degradation rate of mono-c-Si PV modules has been reported as
250 1.54% year 0. Polverni et al. 0 reported the degradation rate of 70 mc-Si PV modules after 20
251 years of field exposure in Italy. The degradation rate of PV modules, as reported of
252 0.24%/year, is comparatively lowers than the reported value. A power degradation rate of
253 0.53%/year found to be in c-Si PV modules after 17 years of outdoor exposure Madrid, Spain
254 climatic condition 0. Virtuani et al., 0 reported the degradation rate of c-Si PV modules which
255 was installed at Italy during (1982, group A) and (1981, group B). The degradation rate of
256 power for group A modules is 0.2%/year and for group B it is 0.54%/year.
2 90
1,8 [38] 80
1,6 [80]
0 0
0 5 10 15 20 25 30 35 40
Years
257
258 Fig. 4 Degradation rate (%/year) of c-Si module after years of outdoor exposure.
259
260 Fig. 4 shows the degradation rates in time. It shows the power degradation rate is higher at
261 initial stage of outdoor exposure with a decreasing of 0.014% per year. The reason is that in
262 the initial stage of the PV module generation and growth of defects is higher than the final
263 stage. However, some studies as 0, 0 reveals higher degradation rate in comparison to the
266 FMEA determines the effect of each failure mode and its causes on the system, according to
267 the severity, occurrence and detect-ability. The IEC 60812 standard has assumed different
268 range of S, O and D for a system, which is helpful to identify the particular single failure
269 mode on the basis of RPN for the particular system and operating environment conditions. A
271 = ∗ ∗ (1)
272 Where “S” mean severity, which is a non-dimensional number. Severity identifies the single
273 failure mode, which strongly affects the system performance. “O” means an occurrence, it’s
274 depends on the probability of occurrence of defect in the system during the exposure time.
275 “D” means detection, which technology (instrument) has ability to identify the failure modes
277 In the present study, the FMEA aims to detect causes and effects of the failure modes for PV
278 modules. RPN calculated on the basis of severity and occurrence rank only. Higher values of
279 RPN mean that particular defects mainly affect the system performance [99-101]. A severity
280 rank of failure mode depends on the degradation rate per year and safety issues. It is very
281 difficult to find out the severity rank of a particular failure mode, as the degradation of a
282 module is a cumulative sum of many factors 0, 0. The highest rank in the severity given
283 according to the safety issue likely insulation resistance failure, de-lamination and burn mark
284 occurs in the PV module, it is a threat/hazard to person or either property. The severity
285 number from 9-10 related to safety issues and highest degradation factor, whereas the
286 numbers from 8 to 1 depend on the performance degradation factor. In the present study the
287 severity rank perform according to 00. The rank of severity has been given in Table 2.
290 The degradation per year (Rd) is computed using ∆Pmax as shown below:
∆
291 = ∗ 100 (2)
, ∗
292 Here ∆Pmax = Pmax, 0 (during installation) − Pmax, t (during measurement) and Y are the years
294 module during the outdoor exposure. Occurrence depends on the probability of the failure
295 mode which occurs in the PV system during the time of field exposure. The failure modes
296 (defects) occur in PV modules in different position should be considered as one defect.
298 Table 3 shows the rank of failure mode according to the frequency of defect occurrence.
299 Rank 10 indicates the higher frequency of defect occurrence in a PV system. While, rank 1 is
300 for low frequency. The occurrence frequency of each failure mode has been calculated by
301 plotting the pie-chart of number for a particular defect as shown in Fig. 5 00.
Front gridline Encapsulant
oxidation de-lamination
Bubble in
9% 12%
bachsheet
Cell cracks
7%
7%
Corrosion in
thermal fatigue
11% Hot spot
7%
Bachsheet de- EVA
lamination discoloration
10% 20%
308 In the present study, recent information about degradation and failure modes of PV modules
310 • The power output of PV modules deployed under different climatic condition does not
311 remain same during lifetime exposure. The degradation in power output decreases fast in
312 the initial stage and after 10-15 years, it behaves like linearly with time during long term
314 • Defects occur in different type of PV technologies under different climatic conditions do
315 not remain same. They affect the performance of different types of PV technologies in
317 • The RPN analysis is helpful to identify the single failure mode, which affect the system
318 performance more. Hot spot and encapsulant de-lamination, back sheet de-lamination,
319 corrosion in solder bond fatigue are major defects related to safety issue with lower RPN
323 Strategic direction and future trends should support outdoor degradation studies of PV
324 modules installed in the different geographical locations which will help to detect the
325 different failure modes and to identify the best performing PV technology for the climatic
326 condition. However, IEC standard is same for climatic conditions. Which should be modified
327 according to the climatic zones. The present study will help manufacturers and consumer to
328 improve the quality of material and maintenance the PV system to overcome failure mode.
329 Nevertheless, the present study is also helpful to improve PV qualification standards.
330 Acknowledgement
331 The research work of the National Technical University of Athens, Greece received funding
332 from the European Union’s Horizon 2020 research and innovation Programme under the
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To Date: 28/10/2019
Editor-in-Chief,
Case Studies in Thermal Engineering
Dear Sir,
I am submitting the manuscript for publication in your esteemed journal, entitled as “Risk priority
number for understanding the severity of photovoltaic failure modes and their impacts on
performance degradation”, authored by Pramod Rajput et al., under original research category for
publication. There is not any Conflict of Interest regarding the present revised manuscript.
Thanking You
With regards,
Maria Malvoni
School of Electrical and Computer Engineering,