Bipolar Junction Transistors

(BJTs)
 Transistor Construction
There are two types of transistors:
• pnp
• npn
pnp

The terminals are labeled:

• E - Emitter
• B - Base
• C - Collector

npn

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 Transistor Operation
With the external sources, VEE and VCC, connected as shown:

• The emitter-base junction is forward biased

• The base-collector junction is reverse biased

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 Currents in a Transistor

Emitter current is the sum of the collector and

base currents:

IE = IC + IB

The collector current is comprised of two

currents:
IC = IC + I CO
majority minority

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Common-Base Configuration

The base is common to both input (emitter–base) and

output (collector–base) of the transistor.

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 Common-Base Amplifier

Input Characteristics

This curve shows the relationship

between of input current (IE) to input
voltage (VBE) for three output voltage
(VCB) levels.

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 Common-Base Amplifier

Output Characteristics
This graph demonstrates
the output current (IC) to
an output voltage (VCB) for
various levels of input
current (IE).

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 Operating Regions

• Active – Operating range of the

amplifier.
• Cutoff – The amplifier is basically
off. There is voltage, but little
current.
• Saturation – The amplifier is full on.
There is current, but little voltage.

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 Approximations

Emitter and collector currents:

I ≅I
C E

Base-emitter voltage:

VBE = 0.7 V (for Silicon)

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 Alpha (α)

Alpha (α) is the ratio of IC to IE :

IC
αdc =
IE

Ideally: α = 1
In reality: α is between 0.9 and 0.998

Alpha (α) in the AC mode:

ΔI C
αac =
ΔI E

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 Transistor Amplification

Currents and Voltages: Voltage Gain:

V 200mV VL 50V
I E = Ii = i = = 10mA Av = = = 250
Ri 20Ω Vi 200mV
I ≅I
C E
I ≅ I = 10 mA
L i
V = I R = (10 ma )(5 kΩ) = 50 V
L L

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 Common–Emitter Configuration

The emitter is common to both input

(base-emitter) and output (collector-
emitter).

The input is on the base and the

output is on the collector.

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Common-Emitter Characteristics

Collector Characteristics Base Characteristics

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 Common-Emitter Amplifier Currents
Ideal Currents

IE = IC + IB IC = α IE

Actual Currents

IC = α IE + ICBO where ICBO = minority collector current

ICBO is usually so small that it can be ignored, except in high

power transistors and in high temperature environments.

When IB = 0 µA the transistor is in cutoff, but there is some minority

current flowing called ICEO.
I CBO
I CEO = I B = 0 μA
1− α

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 Beta (β)
β represents the amplification factor of a transistor. (β is
sometimes referred to as hfe, a term used in transistor modeling
calculations)

In DC mode:
IC
βdc =
IB

In AC mode:
∆IC
β ac = VCE =constant
∆IB

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 Beta (β)
Determining β from a Graph

(3.2 mA − 2.2 mA)

β AC =
(30 μA − 20 μA)
1 mA
= V = 7.5
10 μA CE
= 100

2.7 mA
β DC = VCE = 7.5
25 µA
= 108

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 Beta (β)

Relationship between amplification factors β and α

β α
α= β=
β+1 α −1

Relationship Between Currents

I C = βI B I E = (β + 1)I B

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 Common–Collector Configuration

The input is on the

base and the output is
on the emitter.

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 Common–Collector Configuration

The characteristics are

similar to those of the
common-emitter
configuration, except the
vertical axis is IE.

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Operating Limits for Each Configuration

VCE is at maximum and IC is at

minimum (ICmax= ICEO) in the cutoff
region.

IC is at maximum and VCE is at

minimum (VCE max = VCEsat = VCEO) in
the saturation region.

The transistor operates in the active

region between saturation and cutoff.

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 Transistor Testing
• Curve Tracer
Provides a graph of the characteristic curves.

• DMM
Some DMMs measure βDC or hFE.

• Ohmmeter

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