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Equivalent Circuit Models for Three-Dimension Multiconductor Systems

Article  in  IEEE Transactions on Microwave Theory and Techniques · April 1974

DOI: 10.1109/TMTT.1974.1128204 · Source: IEEE Xplore

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 216 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. WIT-22, NO. 3, MARCH 1974

Equivalent Circuit Models for Tliree-Dirnensional

Multiconductor Systems

ALBERT E. RUEHLI, MEMBER, IEEE

~lxtract—Multiconductor or multiwire arrangements find many here and elsewhere [13] since they encompass a wide
applications in electronic systems. Examples are interconneciioris frequency spectrum.
between digital circuits or integrated microwave circuits. Equivident
The formulation presented here affects three seemingly
circuit models are derived here from an integral equation to establish
an electrical description of the physical georheiry. The models, which
different subject areas. First, it provides a more compre-
are appropriately called partial elefient equivalent circuits (PEEC), hensive interpretation of the relations between circuit
are general iri thdt they iriclude losses. Models of different complexity theory and field theory [14]. Second, it maybe considered
can be crmstructed, to suit the application at htid. as an extension of an integral equation solution for induct-
ance computations [15] in that it includes capacitance.
I. INTRODUCTION Third, it relates to multiwire antennas [16], which corre-
sponds to the formulation below if retardation tirhes are
ULTICONDUCTOR or rnultiwire arrangements included.
M find many applications in electronic systems, e.g., A basic integral equation approach is discussed in Sec-
the intercommunications between digital logic circuits tion II, while an interpretation in terms of inductances is
[1] or microwave integrated circuits [2]. Several methods considered in Secticm III. The portion that relates to
are available today for the analysis of a set of long parallel capacitance is the subject of Section IV, and in Section V
wires close to a common conducting plane [3]–[5]. Two- the relation to retardation times is discussed. In Section
dimensitmal approximations are, however, not applicable VI circuit interpretations are considered, while in Section
to an important class of three-dimensional conductor VII an example is given and further approximations are
arrangements. These geometries consist of conductors discussed.
that may be highly intercoupled because of the tibsence
or remoteness of a comon ground plane. Examples of II. INTEGRAL EQUATION FORMULATION
three-dimensional geometries are integrated circuit pack- The unknowns in a multiconductor or multiwire system
ages and wires or conductors located on dielectric layers are the charges on the surfaces and the. current densities
with remote ground planes. These geometries may, be within the conductors. An integral equation solution is
viewed as i ‘consisting of discontinuities” from a trans- appropriate for problems with large free-space regions
mission line point of view afid are not easily amenable to since a differential equation formulation would require
analysis. However, additiorial electrical design flexibiM y that all regions including the free space be described by
is obtained above two-dimensional striplines for many riodes.
applications due to the multitude of relative conducto~ The approximate integral equation solution pursued
locations possible. here is based on the smnmation of all sources of electric
The ptirpose of this paper is to present a theory for an
fields within a conductor [14], or~lu = ~, – d~/Ot – V+.
approximate computer modeling approrich for, three- Here, ~ is the current density in the conductor of con-
dimensional geometries that is appropriately called partial ductivity u, and ~ and @ are the vector and scalar poten-
element equivalent circuit (PEEC) analysis. The PEEC tials, respectively.
method is based on an integral equation description of the
geometry that is interpreted in terms of circuit elements. J(F,t) ad (?,t)
Eo(?,t) = —+7 + v@(F,t) (1)
The circuit elements, tiiz., the partial inductances and i?
partial capacitances, can be found from computer solu-
where P is the vector from the origin. The vector potential
tions, as has been shown previously [G]–[9]. A gene:al-
~ for K conductors is
purpose network analysis pr~gram [lCi3-~12] is then used
to obtain voltages and currents in both the time domain ‘P
~ (F,t) = ~~, ~ / l?(~,?’)j(r’,t’) dv’ (2)
and the frequent y domain. Time domain results are gi+en .k
where the retarded time is given by
Manuscript received June 25, 1973; revised September 28, 1973.
The author is with the Circuit and Computer Design Automation
t,=t_l~–~’l
Group, IBM Thomas J. Watson Research Center, Yorktown (%.%) ‘l’ (3)
Heights, N. Y. 10598. c
RUEHLI: MODELS E’OR THREE-DIMENSIONAL MULTICONDUCTOR SYSTEMS 217

for uniform regions with properties e,, W, where c repre- quantity. Hence, the expansion function for the charge
sentsthe speed of light. Tbefunction l?is defined by density is

Mh
R(T7”)Q ,~ : # ,“ (4)
qk(tn) = x p?nkqmk (k) (lo)
m=l

Similarly, the scalar potential @ is

where Mk includes all surface cells charged with a locally
‘1 constant charge density. The extent of the surface celll
@(T,t) = ~—] I?(7,F)q(?’,t’) dv’. (5)
~=l!tlm ~, is defined as j%nk = 1 on the rnth cell and is O elsewhere,
An example is given for an appropriate choice of the cells,
Inserting (2) and (5) into (1) leads to before thk development is carried further. The number of
J(?,t) network nodes specified within ~ conductor determines
Eo(?,t)=— the size of the cells and, ultimately, the complexity of the
u
networks. The number of nodes should not be exceedingly
large for practical solutions. Fig. 1 shows a choice of cells
+;l ‘/ ~(~,~’)~(~’,t’)d~’
~=1at[ 47r W, 1 for the most general case, a conductor
for all three directions of current flow.
with finite
The dividing
thickness
lines
K r-e 1 are called inductive–resistive partitions and the choice of
+ ~
k’=1 1
V & j
Qk
I?(?,T’)rf(P’,t’) dV’j . (6) the cells At each node in uniquely
appropriate
given by the nodes. An
division of the conductor surface into mutually
As a first step towards a PEEC representation, the un- exclusive uniformly charged cells is shown in Fig. 2. The
known quantities are approximated as locally constant dividing lines that disconnect the surface electrically are
functions. The- current density is represented in terms of called capacitive partitions. The elements of the equivalent
orthogonal components, or J = J.k + JVG + J.% where circuits are fully determined by these cells.
the components are locally constant over cells to be chosen. It is recognized that the applied field l?, is O for the
A rectangular volume cell is defined by a pulse function circuit problem under consideration. A set of coupled
[16] as P7~~ = 1 on the @cth volume cell and is O else- equations is obtained next by integration of (9) separately
where. Here, Y = x,y,z and nk represents the nth element over all volume cells into which the K Conductors are
on conductor k. The current density is then expanded as divided. Integration over the lth cell in one of the con-
N.yk
ductors leads to
J7k (t’) = ~ l’7m,JVnk (k) (7)
%=1

where t.is an approximation of t’and is given by

(8)

The vector FS extends to the center of the source volume

cell, and N7~ is the total number of cells in the y direction
on conductor k. The expansion function (7) is inserted
into the general equation (6) to yield

Jy(F,t) Fig. 1. Volume cells for currents in rectangular conductor.

E,,(?,t) = —
u

t’ t’

D
~1 I
II
[1 CAPACITIVE
PARTITIONS
II I
NM
Ii ~1
for y = x,y,.z.
!_t II
Furthermore, the charge density is written as another
Iln
expansion function of the same type. Since the free charge x
is restricted to the outside surfaces of all conductors,
Fig. 2. Surface cells for capacitive partitions for rectangular
q(F) is a surface layer charge density rather than a volume conductors.
218 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TEcHNIQUES, MARCH 1974

K Mb
1
v. = x ~ qmk(tmk) — 2? (7z+,?’) ds’
k=l m=l [ 47K \ /gmk

The vector associated with the positive end of the lth cell
is designated with a + sign while the negative lead is
indicated with a — sign. The retarded time refers to the
where y = x,y,z as previously, where the charge density is center of the volume cell, in the same way as for the partial
included as’ a surface quantity in (11). Next, (11) is inductances.. The kernel for the integrals in (15) is re-
divided by the cell cross section al perpendicular to the written as a Green’s function G = K/47rc. Then (15) is
direction of current flow. The local approximations used K Mk r,
here to find network elements &e the same as are used in
finite difference techniques. The first term on the left-
hand side of (11) is then interpreted as the resistive
voltage
written
drop along the cell v, = RTZIYJ and (11) is re-
?s v, + VL + V. = 0.
—
J G(?z-,?’)
S71A
ds’
1
. (16)

With the total charge on the rnkth cell given by Q~k =

III. INDUCTANCE TERM
qmkamk, the terms in (16) can easily be interpreted as
The second term on the left-hand side is rewritten in
terms of the total current through the cell as
k=l m=]

where in general

(12) 1
ppij = – G (7,,7’) ds’. (17b)
aj / Si
If the kernel (4) is inserted into (12), the term in
brackets is recognized to be in the form of partial in- Equation (17) is clearly in the form of partial coefficients
ductances [6], with the sums representing the coupling of potential (7), which is essential] y the same as the
among them: coefficients of potential except that partial surfaces of a
K NW conductor are involved. Equation (17a) represents the
VL = ~ x LPLYn~ $ [Irk(k) 1. (13) voltage differences Vij = @i — @j across the elements. TO
/+=1 n=l further extend the definition, retarded partial coefficients
Again, the inductances of straight conductor segments of potential are defined that include the specification of
corresponding to the cells are called partial inductances the retardation time. Since the charges reside on the con-
Lpi, to avoid confusion with the loop inductances Lij. ductor surfaces, the potentials are only due to nodes
The purrents I,~k are for most practical systems instan- external to the conductors. Therefore, generalized partial
taneous in that k = t in (8), due to physical smallness. coefficients of potential can be written in matrix form as
For widely spaced segments in uniform regions, retarded *P’

[1[1
PP’
partial inductances can be defined since the retardation ---- = (18)
---- Q,
depends on the physical distance. *pi
PPi
IV. CAPACITIVE TERM where @ and ppi correspond to the internal nodes, while
It is next shown that the last term in (11) corresponds @J.’,pps, and Q. refer to the surface cells.
to capacitive coupling. The inside integral is defined as
V. RETARDATION TIME
F(7) A f,., l?q cts’ over the local surface cells defined in
(10). Then the integral in the ~ coordinate is approxi- The formulation given above is general in that it in-
mated as cludes retardation times for widely spaced objects in a
uniform dielectric region. As indicated in Sections III and
VI, retarded partial inductances and retarded coefficients
of potential can be defined for a network interpretation of
the formulation. A basic difference between the wire
(14)
antenna problem [16] and the interconnection systems
This sh~ws tha$ the capacitive cells in Fig. 2 are shifted considered here is that retardation times are large for the
from the cells in Fig. 1 by half the size of a cell. If the former, while for the latter they may be ignorably small.
above results are applied to (11) and use is made of (10), Furthermore, the coupling of minute signals from’ the
a circuit-type equation results, or antenna to the receiver is of interest. In contrast, for
RUEHLI: MODELS FOR THREE-DIMENSIONAL MULTICONDUCTOR SYSTEMS 219

circuit-type geometries only relatively strong intercoupling inductance, and network analysis. General formulations
is of interest. This immediately suggests that sparsity can exist for all these tasks such that responses for a wide
be introduced into the interactions by ignoring small range of geometries can be computed.
coupling terms. For most situations, the small coupling
elements are also the ones having larger retardation time. VII. APPROXIMAIrIONS AND RESULTS

For circuit geometries of practical interest all conductors

VI. CIRCUIT INTERPRETATION are assumed to be located on a set of parallel planes.
The surface portion of (18) can be interpreted in terms Static Green functions are used to approximate the inclu-
of multicapacitances for ignorably small retardation times. sion of layers with different dielectric constants. These
Coefficients of partial capacitance are defined elsewhere Green functions are available from three-dimensional
[7] as cp = pp-’, which corresponds to a full network of capacitance computation methods [7]–[9]. In fact, for
capacitances for the partial surfaces. Partial capacitances most circuit-type geometries they are directly included in
that are obtained from exact computations [7]–[9] repre- the capacitances computed. Close agreement has been
sent a local improvement over the uniformly charged cells obtained between a measurement and responses from a
assumed above. The second portion of (18) must be PEEC solution for loops located on a dielectric substrate
interpreted as a set of dependent charge-controlled poten- for fast rising pulses with a spectrum into the gigahertz
tial sources for nodes inside the conductors. A differential range [13].
relation can be obtained for these nodes from (17) as An approximate description of the geometry often results
in considerable savings in set-up and computation time.
K Mb
Responses for models of a different complexity are com-
V,+,- = ~ ~ Imk[ppi(mk)+ – Ppi(mk)-] (19)
k=l m-l
pared to find whether sufficient] y small cells have been
chosen. An example is again given in [13]. The change of
where i represents all internal nodes and I is the capacitive L and R with frequency is less pronounced for conductors
node current. To summarize, the capacitive terms for the that are not closely spaced and that are not located near
surface nodes are taken into account by a set of multi- ground planes. Thus very often the conductors can be
capacitances, while internal nodes are represented by represented by a few nodes only. A typical example for
charge-controlled voltage sources. An example is given in rather large loops is given in Fig. 4. The responses of
Fig. 3 for a complete equivalent circuit for a corner of the interest are found in the time domain rather than fre-
rectangular conductor shown in Figs. 1 and 2. The induct- quency domain using the ASTAP program [12]. The
ances in the equivalent circuit are simply the partial cross section of the conductors is 1.2 mm X 50 pm, ‘while
inductances [6] of the cells while the cell resistance com- the horizontal geometry shown in Fig. 4 is located on a
putations are trivial. The equivalent circuit is entered substrate with CT= 4. A discussion is appropriate concern-
into a general-purpose network analysis program [10]– ing the choice of the cells for the problem at hand. The
[12] to obtain the responses of interest. This solution long and thin conductors are not divided further in the
approach results in a very flexible computer tool. Essen- cross-sectional dimensions. Partitions that delimit the
tially, three types of analysis are performed-capacitance, inductance and capacitance cells are chosen at convenient

–vL+

fi H >INDUCTIVE PART,T,ON
& . — ——
I
i “
LP14 14

‘JII 8
( )

: :R14 : R15
LP12 12
1b
s %2 CP6 12 ‘P6 II
I 91 u — + ;
61 mm
1b n
%99
%9
LPIO 10 \
V56 ( ) \
—cp@
CAPACITIVE
: F9 RIO \ PARTITIONS
L P77
! /’
~’ q
5
R7
6 /
—
+,
\
I
Fig. 3. Equivalent circuit for corner of a conductor. Fig. 4. Conductors on insulating substrate.
220 3EEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, MARCH 1974

. v~ TABLE I
LIST OFNETWORKELEMENTS

R~ = 50 L = 21 c = .61
p55 p12

~1 = 300 L = 59 c = .525
p66 p13
RS
%2 .50 = 20 c = .225
JJp77 p14

=8 = 14.7 c = .725
CL1 Lp13 p15

= 27 L = -10.6 c = .285
c p23
L2 P16

= 57.2 L =2 c = .275
L p27 p25
LP66 pll

L = 10.2 L = -7.7 c = .125

p22 P36 p34

L = 62.1 L = 2.4 c = .275

p33 p45 p35

L = 11.6 L = -1 c – .225
p44 p57 p45 –

Lpm
R in ohms; L m nSI; C in PF

—---+&------
resistance can usual] y be found from simple calculations.
Changes in the geometry are easily accommodated since
Fig. 5. Partial element equivalent circuit. Partial capacitances
labeled according to node numbers. general computer solutions are involved in the task.
It is noted that the PEEC models are rather inefficient
for two-dimensional geometries, especially if a high degree
0.2
\v= of resolution is required. For three-dimensional geometries,
f 7
very good results are obtained with a few elements only,
as is exemplified in Section VII.
01 -
—VL MEASUREO, CL2 = 27PF
/ ACKNOWLEDGMENT
––– VL CALCULATE, CI_2 = 27PF
/’
—.–VL MEASURED, CL2 = o The author wishes to thank M. Handelsman of the
I
—-—vL CALCULATED, CL2 = o University of Vermont for many helpful discussions on the
0
5 10 15 20 subject.
TIME IN ns

Fig. 6. Time domain response.

REFERENCES
[1] A. E. Ruehlil “Electrical considerations in the computer-aided
points along the length of the conductors as indicated in design of Ioglc circuit interconnections,” in Proc. A CM-IEEE
10th Annu. Desian Automation Worksho~ . (Portland. Orex.... ,
Fig. 4. The series resistance of the wires is ignored for this June 1973). “
case and all retardation times are assumed to be O., The [2] M. Caulton, B. Hershenov, S. P. Knight, and R. E. DeBrecht,
“Status of lumped elements in microwave integrated circuits—
source and loads can be arbitrary but an arrangement is
Present and future,:’ IEEE Trans. Microwave Theory Tech.
chosen here that permits a measurement. The PEEC model (Swecial Issue on M~crowave Integrated Circuits). ,, vol. MTT-19.
pp’. 58%599, July 1971.
shown in Fig. 5 is based on the relatively large cells chosen,
[3] H. Amemiya, “Time-domain analysis of multiple parallel trans-
yet they lead to a rather accurate representation of the mission lines, ” RCA Rev., pp. 241-276, June 1967.
[4] C. W. Ho, “Theory and computer-aided analysis of multiple
time domain responses shown in Fig. 6 with only 17 cir-
coupled transmission lines,” in Proc. IEEE Int. Symp. Circuit
cuit elements. The two responses shown are examples Theory (North Hollywood, Calif., Apr. 1972), pp. 1>15.
[5] N. B. Rabbat, “Computer-aided transient response of multiple
with or without CL2 connected. The partial capacitances
coupled unequal transmission lines,” in Proc. IEEE Int. Symp.
(7Pi, [7] listed in Table I are in “node-pair form,” a repre- Circuit Theory (Toronto, Ont., Canada, Apr. 1973), pp. 217–219.
[6] A. E. Ruehli, “Inductance calculations in a complex integrated
sentation that is obtained by transforming all capacitances
circuit environment,” IBM J. Rcs. Develop., vol. 16, pp. 470–
to the node at infinity in parallel to the node-pair capaci- 481, Sept. 1972.
[7] A. E. Ruehli and P. A. Brennan, “Efficient capacitance calcula-
tances. This is obtained by a generalized star–triangle
tions for three-dimensional multiconductor systems,” IEEE
transformation. Trans. Microwave Theory Tech., vol. MTT-21, pp. 76-82, Feb.
1072v.
L“.

[8] P. Silvester and P. Benedek, “Equivalent capacitances of

VIII. CONCLUSIONS
microstrip open circuits,” IEEE Trans. Microwave Theory
The PEEC models presented in this paper lead to a Tech., vol. MTT-20, pp. 511–516, Aug. 1972.
[9] P. D. Patel, “Calculation of capacitance coefficients for a
flexible solution technique both in the time domain and system of irregular finite conductors on a dielectric sheet,”
the frequency domain mainly due to the availability of IEEE Trams. Microwave Theoru Tech., vol. MT’P-19, .m. .
86%869, Nov. 1971.
computer formulations. Essentially, three computer analy- [10] F. H. Branin, G. R. Hogsett, R. Lunde, and L. E. Kugel,
ses must be performed, viz., inductance computations, “Ecap II–An electronic circuit analysis program,” IEEE
.Spectrum, vol. 8, pp. 14-25, June 1971.
capacitance computation, and network analysis. The series [11] W. T. Weeks, A. J. Jimenez, C. W. Mahoney, H. Qassemzadeh,
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and T. R. Scott, “Networka nalysisu singasparset ableauwith [14] E. C. Jordan and K. G. Balmain, Electro-Magrzetic Waves and
tree selection to increase sparseness,” in Proc. IEEE .7nt. Radiating Systems. Englewood Cliffs, N. J.: Prentice-Hall,
Syrnp. Circuit Theory (Toronto, Ont., Canada, Apr. 1973), 1968, ch. 14.
pp. 165-168. [15] A.. Gopinath and P. Silvester, “Calculation of inductance of
[12] IBM Advanced Mati.stical Analysis Program, ASTAP manual fimte-length strips and its variation with frequency,” IEEE
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[13] A. E. Ruehlij ``Electrical analysis ofinterconnections inasolid- June 1973.
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Circuit Corzf. (New York, 1972), pp.6+65andp.216. New York: Macmdlan, 1968, ch. 1 and 4.

An iterative APProach to the Finite-Element Method

in F ie Id Problems

W. KINSNER, MEMBER, IEEE, AND EDWARD DELLA TORRE, SENIOR MEMBER, IEEE

Abstract—An iterative approach to the finite-element method is vector (s) associated with the particular eigenvalue (s).
presented. Several finite-element formulations are presented for the
It is noted that for the H modes A k only semidefinite.
Laplace, Poisson, and Hehnholtz equations. These formulations
The finite-difference formulation of these problems also
permit iterative solutions. The convergence of the vector sequences
generated by the iterative method is accelerated using successive leads to (1), however, the matrix B is the identity matrix,
extrapolation and other methods. Accuracy and convergence of the and A k not necessarily symmetric.
solutions are discussed. A variety of methods for solving (1) have been pre-
sented (e.g., [9], [10], and [12]). The finite-difference
I. INTRODUCTION
solutions most frequently employ iterative techniques
HE THEORETICAL background of the finite- and the finite-element solutions almost exclusively use
T element method has been given by Aubin [1]. dwect methods.
Other authors [2], [3] have introduced some practical Iterative methods for solving eigenvalue problems may
aspects of the method as applied to structural mechanics. be divided into two categories. The first methods use the
Sivester [4] and others [5], [16], [20]-[22] discussed fact that eigenvectors of a system form a linearly inde-
the method as applied to the electromagnetic field prob- pendent set which spans an n dimensional space. The
lems. Convergence of the method, as a function of the methods in the second category use the property that the
relative size of the discretizing elements and the order of generalized Rayleigh quotient
the approximating polynomials, is discussed in many
XTA X
recent mathematical and technical journals [6]. In Q=— (q
XTBX
particular, explicit discretization errors are given in [1],
[2], [6], and [7], and some experimental results are given is equal to an eigenvalue and is stationary when x is the
in [5] and [8]. corresponding eigenvector. A method using this property
The variational formulation of waveguide problems, with Fletcher–Powell iteration has been described [13].
using complete polynomials, leads to the general eigen- These methods combined with the deflation or ortho-
value problem gonalization yield, however, only partial eigensolutions,
AX = xl?% (1) i.e., the dominant and several closest eigenvectors, An
iterative method for the complete eigensolution shall be
where A and B are symmetric positive-definite n x n
presented.
band matrices, A is the eigenvalue (s) and x the eigen-
II. FINITE-ELEMENT FORMULATION
Manuscript received June 26, 1973; revised November 7, 1973. Let R be either a simply or multiply-connected bounded
This work was supported by the National Research Council of
Canada. region in an n dimensional space V“ with boundar,y r.
The authors are with the Group on Simulation! Optimization, The boundary 1? consists of a finite number of closed,
and Control, Department of Electrical Engineering, McMaster
University, Hamilton, Ont., Canada. nonintersecting hypersurfaces rl, (h = O, ..”, ~) such

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