Title

Thyristor and its applications

Name Chew Ming Rick

Registration Number 0819060120
Date 21-12-2020
Course Diploma in Nautical Science

Abstract

1
A thyristor is a solid-state semiconductor device with four layers of alternating P- and N-
type materials. It acts exclusively as a bistable switch, conducting when the gate receives a
current trigger, and continuing to conduct until the voltage across the device is reversed biased,
or until the voltage is removed (by some other means). There are two designs, differing in what
triggers the conducting state. In a three-lead thyristor, a small current on its Gate lead controls
the larger current of the Anode to Cathode path. In a two-lead thyristor, conduction begins when
the potential difference between the Anode and Cathode themselves is sufficiently large
(breakdown voltage).
The first thyristor devices were released commercially in 1956. Because thyristors can control a
relatively large amount of power and voltage with a small device, they find wide application in
control of electric power, ranging from light dimmers and electric motor speed control to high-
voltage direct-current power transmission. Thyristors may be used in power-switching circuits,
relay-replacement circuits, inverter circuits, oscillator circuits, level-detector circuits, chopper
circuits, light-dimming circuits, low-cost timer circuits, logic circuits, speed-control circuits,
phase-control circuits, etc. Originally, thyristors relied only on current reversal to turn them off,
making them difficult to apply for direct current; newer device types can be turned on and off
through the control gate signal. The latter is known as a gate turn-off thyristor, or GTO thyristor.
A thyristor is not a proportional device like a transistor. In other words, a thyristor can only be
fully on or off, while a transistor can lie in between on and off states. This makes a thyristor
unsuitable as an analogue amplifier, but useful as a switch.

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Table of content
Chapter 1: Introduction Page
1.1 Thyristor 4
……………………………………………………………………...................
1.2 Symbol …………………………………………………………………………………. 4
1.3 Structure …………………………………………………………….............................. 5
1.4 States of Thyristor………………………………………………………….................... 6
Chapter 2: History
2.1 Development of thyristor…………………………………………………….................. 7
2.2 New trend in fabrication 7
technology…………………………………………………….
2.3 The first prototype of thyristor 8
………………………………………….........................
Chapter 3: Main
3.1 Types of Thyristors……………………………………………………........................... 9
3.1.1 Silicon Controlled Thyristors (SCR) 9
………………………………….........................
3.1.2 Emitter turn Thyristors (ETO) ……………………………………………………….. 10
3.1.3 Fast Switching Thyristors (SCR) …………………………………………………….. 11
3.1.4 Light Activated Silicon Controlled Rectifiers (LASCR) ……………………………. 11
3.1.5 Gate Turn O Thyristors (GTO) 12
………………………………………………………..
3.1.6 Reverse Conducting Thyristors (RCT) ………………………………………………. 13
3.1.7 Integrated Gate-Commutated Thyristor (IGCT) 14
………………………………………
3.2 Function of the gate terminal ……………………………………………....................... 14
3.3 Switching characteristics ……………………………………………………. 15
………….
3.4 Turn on Methods ………………………………………………..................................... 16
3.5 Applications of Thyristor ………………………………………………………………. 17
3.6 Thyristors failure modes……………………………………………………………....... 17
3.7 Advantages of 18
Thyristor…………………………………………………………………
3.8 Disadvantages of Thyristor …………………………………………………………….. 19
Chapter 4 Conclusion
4.0 Conclusion ……………………………………………………………………………... 20
Chapter 5 Reference
5.0 Reference ………………………………………………………………………………. 21

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Chapter 1: Introduction

1.1 Thyristor
A thyristor is a four-layer solid-state semiconductor device with P and N type material.
Whenever a gate receives a triggering current then it starts conducting until the voltage across
the thyristor device is under forward bias. So, it acts as a bistable switch under this condition.
To control the large amount of current of the two leads we have to design a three-lead
thyristor by combining the small amount of current to that current. This process is known as
control lead. If the potential difference between the two leads is under breakdown voltage,
then a two-lead thyristor is used to switch on the device. It is a four-layer PNPN
semiconductor switching device with three P-N junctions. It has three terminals; the two main
terminals Anode and Cathode & the control terminal called gate.

1.2 Symbol
The symbol of thyristor (as shown in Diagram 1.2) resembles diode because both of them
allow current flow in one direction except thyristors are controlled by external gate input.

Diagram 1.2 Thyristor symbol

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1.3 Structure
The thyristor consists of a four-layer PNPN structure with the outer layers are referred to as
the anode (P-type) and cathode (N-type). The control terminal of the thyristor is named the
gate and it is connected to the P-type layer located next to the cathode. As a result, the
thyristor has three junctions rather than the one junction of a diode, and two within
transistors. The three junctions are normally denoted as J1, J2, and J3. They are numbered
serially with J1 being nearest to the anode. Although it is possible to use a variety of different
materials for thyristors, silicon is the most popular. The trade name for this type of device -
silicon controlled rectifier - also indicates that silicon is the most popular material. Silicon
provides good thermal conductivity as well as a high voltage and current capability. Another
advantage is that the processes for silicon are more mature, and hence cheaper to run, than
those for other materials. However, other materials including silicon carbide, SiC; gallium
nitride, GaN; diamond, C; and semi-wide-gap semiconductor material gallium arsenide,
GaAs as well, have been investigated and according to the research they demonstrated
promising properties under extreme conditions of high power, high temperature and high
frequency. Nevertheless, silicon still remains the most popular substance.

Diagram 1.3 Structure

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1.4 States of Thyristor
There are three states of thyristors.

Forward blocking mode

When there is positive anode-to-cathode voltage, but there is no gate input to triggered the
thyristor into the conduction state.

Forward conduction mode

When the thyristor is triggered into the conduction state and the forward current is maintained
above the ‘holding current’.

Reverse blocking mode

When there is a negative voltage applied to the anode with respect to the cathode, the
thyristor blocks the current flow like a normal diode.

Diagram 1.4 States of thyristor

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Chapter 2: History

2.1 Development of Thyristor

The development of power control with electronic methods is started with the use of
thermionic and gas-discharge valves. These devices include mercury arc converters and
thyratrons and ignitrons. The thyratrons are gas-filled triodes used particularly for switching
heavy currents. With the rapid development in semiconductor technology, miniaturization of
electronic circuits replaces these thermionic valves and gas-discharge valves results to use
power diodes and power transistors in many industrial applications. The silicon controlled
rectifier (SCR) or thyristor proposed by William Shockley in 1950 and championed by Moll
and others at Bell Labs was developed in 1956 by power engineers at General Electric (G.E.),
led by Gordon Hall and commercialized by G.E.'s Frank W. "Bill" Gutzwiller. The Institute
of Electrical and Electronics Engineers recognized the invention by placing a plaque at the
invention site in Clyde, NY and declaring it an IEEE Historic Milestone. An earlier gas-filled
tube device called a thyratron provided a similar electronic switching capability, where a
small control voltage could switch a large current. It is from a combination of "thyratron" and
"transistor" that the term "thyristor" is derived.

2.2 New trend in fabrication technology

A new trend in fabrication technology developed thyristors which exhibit similar
characteristics of gas tube thyratrons. Thyristor name is derived by the combination of two
words as thyratron and transistor. Due to the improved reliability, increased temperature
performance and lower manufacturing costs, these thyristors are being widely used for many
applications. At present, there are two technologies utilized in the manufacturing of power
thyristors: alloying and free-floating silicon technology. Alloying technology joins silicon
chip with molybdenum thermal compensator by use of vacuum soldering with aluminium-
silicon alloys. This method provides firm silicon chip-molybdenum disc junction with good
cycling capacity and quite low thermal resistance. External installation force from the
cathode side is required to secure thermal contact. However, since alloying is a high-
temperature process (about 700C), thermomechanical stresses occur in Si-Mo packet because
of different thermal expansion coefficients of silicon and molybdenum. This issue becomes
even more significant for joined discs of bigger linear dimensions (diameters). 

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2.3 The first prototype of thyristor
The first prototype of thyristor was introduced in 1957 by the General Electric company.
Since then, with the fabrication developments and adaptability to many industrial
applications, other devices with similar characteristics were introduced which comes under
the thyristor family.
The basic material of the device is silicon and hence these are named as Silicon Controlled
Rectifiers (SCR’s). However, generally considered that, SCR is an oldest member of thyristor
family. Another problem with alloying technology is active dissolving of surface layers of
silicon chip. This issue is topical at manufacturing of fast-recovery devices as it is necessary
to decrease the thickness of the silicon chip and generated anode emitter in order to secure the
required performance characteristics. Thickness decrease and fusion penetrations lead to
dispersion of emitter layer injection rate resulting in uneven spread of anode current.

Free-floating silicon technology puts a semiconductor wafer with cathode and anode
metallization between cathode and anode thermal compensator of semiconductor device.
Thanks to the absence of soldered joint, there are only pressure thermal and electrical
contacts between molybdenum thermal compensator and silicon wafer. Pressure contact
design’s advantage is absence of deformations and residual voltages that occur during
soldering of silicon wafer with thermal compensator due to difference between linear
expansion coefficients. This feature is extremely important for manufacturing of
semiconductor elements with diameter of more than 80mm. Another important advantage of
free-floating silicon technology is that surface layers of silicon do not dissolve. 

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Chapter 3: Main

3.1 Types of Thyristors

The types of Thyristors are based on the turning on and off capabilities and the physical
structure. Thyristor are classified as:

3.1.1 Silicon Controlled Thyristors (SCR)

Phase-controlled thyristor also known as a Silicon Controlled Rectifier (SCR) is turned on by
applying the gate current, when it is in forward bias. It does not have a turn-off capability. So,
it turns off when the anode current reaches zero.

If an SCR’s gate is left floating (disconnected), it behaves exactly as a Shockley diode. It may
be matched by breakover voltage or by exceeding the critical rate of voltage rise between
anode and cathode, just as with the Shockley diode. Dropout is accomplished by reducing
current until one or both internal transistors fall into cut-off mode, also like the Shockley
diode. However, because the gate terminal connects directly to the base of the lower
transistor, it may be used as an alternative means to latch the SCR. By applying a small
voltage between gate and cathode, the lower transistor will be forced on by the resulting base
current, which will cause the upper transistor to conduct, which then supplies the lower
transistor’s base with current so that it no longer needs to be activated by a gate voltage. The
necessary gate current to initiate latch-up, of course, will be much lower than the current
through the SCR from cathode to anode, so the SCR does achieve a measure of amplification.

Diagram 3.1.1 Silicon Controlled Thyristors (SCR)

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3.1.2 Emitter turn Thyristors (ETO)
ETO also uses GTO & MOSFET combination. It consists of two N-MOSFET & P-MOSFET
& a GTO. An NMOS is connected in series with its cathode terminal and P-MOS is
connected between the gate and the cathode terminal of SCR.

It has two gate terminals; a normal gate terminal for turn-on & another gate terminal for turn-
off connected with series N-MOSFET. It turns on by applying a positive gate voltage to both
gates making N-MOS turn-on & P-MOS turn-off. It turns off by applying a negative voltage
to N-MOS gate providing the residual carrier to flow out through the P-MOS, which also
provides fast switching.

An ETO is turned ON by applying positive voltages to gates, gate 1 and gate 2. When a
positive voltage is applied to the gate 2, it turns on the MOSFET that is connected in series
with the cathode terminal of the PNPN thyristor structure. The positive voltage applied to the
gate 1 turns off the MOSFET connected to the gate terminal of the thyristor. When a turn-off
negative voltage signal is applied to the MOSFET connected to the cathode, it turns off and
transfers all the current away from the cathode (N-emitter of the NPN transistor in the
thyristor) into the base gate via MOSFET connected to the gate of the thyristor. This
stops regenerative latching process and results in a fast turn-off. Both the MOSFET
connected to the cathode and MOSFET connected to the gate of the thyristor are not
subjected to high-voltage stresses irrespective of the magnitude of the voltage on the ETO,
due to the internal structure of the thyristor containing a P-N junction. The drawback of
connecting a MOSFET in series is that it has to carry the main thyristor current and it also
increases the total voltage drop by about 0.3 to 0.5V and its corresponding losses. Similar to
a GTO, the ETO has a long turn-off tail of current at the end of the turn-off and the next turn-
on must wait until the residual charge on the anode side is dissipated through the
recombination process.

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 Diagram 3.1.2 Emitter turn Thyristors (ETO)
3.1.3 Fast Switching Thyristors (SCR)
They are generally silicon-controlled rectifier (SCR) but they have fast switching speed. It
uses the resonant inverter for forced commutation.it is also known as inverter thyristor.

3.1.4 Light Activated Silicon Controlled Rectifiers (LASCR)

LASCR is triggered by using a light source such as LED etc. The light (photon) particles
upon hitting the junction produce electron-hole pairs, which triggers the current flow throw
the device. LASCR electrically isolate the high-power circuit form the light source circuit.

The LASCRs find many applications including optical light controls, relays, phase control,
motor control and a large number of computer applications. The maximum current (rms) and
power (gate) ratings for LASCRs commercially avail-able are about 3 A and 0.1 W. With the
increase in junction temperature the light energy required to activate the device is reduced.

Light activated SCR (LASCR) or a Photo SCR is just an ordinary SCR except that it can also
be light triggered. Most LASCRs also have a gate terminal for being triggered by an electrical
pulse just as a conventional SCR. The basic construction of an LASCR is shown in figure.
The schematic symbols most commonly used for the LASCR are shown in figure.  Some
LASCRs have clear windows in their cases so that light sources from other devices can be
coupled to them. Many have the light source encapsulated in the same package so that a relay
is formed. When the light falling on depletion layers is strong enough, valence electrons are
dislodged from their orbits and become free electrons. When these free electrons flow out of
the collector of one, transistor into the base of the other.

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 Diagram 3.1.4 Light Activated Silicon Controlled Rectifiers (LASCR)

3.1.5 Gate Turn O Thyristors (GTO)

GTO turn on like any normal SCR by applying positive gate voltage. However, it can be
turned off by applying negative gate voltage. It is a non-latching device; it requires a
minimum of 1% of the turn-on pulse to maintain its conduction state. The capability for the
gate turns off thyristor to be turned-on by a gate signal, and also turned-off by a gate signal of
negative polarity give it a unique capability within the thyristor family of devices. The device
turns on is accomplished by a "positive current" pulse between the gate and cathode
terminals. As the gate-cathode behaves like PN junction, there is a relatively small voltage
between the terminals. The turn on phenomenon in GTO is however, not as reliable as that of
a standard thyristor and small positive gate current must be maintained even after turn on to
improve reliability. Like the standard thyristor, the gate turn-off thyristor is a four-layer
device having three junctions. Again, the layers are P N P N with the outside p layer
providing the anode connection, and the outside n layer providing he cathode connection. To
attain high emitter efficiency, the cathode layer is highly doped to give an n+ region. This has
the drawback that it renders the junction nearest to the cathode (normally referred to as J3)
with a low breakdown voltage - typically 20- 40 volts. The doping level of the p region for
the gate is graded. This is to provide good emitter efficiency for which the doping level
should be low, while providing a good turn off characteristic for which a high doping level is
needed. The gate electrode is often inter-digitated to optimise the current turn=off capability.
High current devices, i.e. 1000A and above may have several thousand segments which are
all connected to the common gate contact.

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 Diagram 3.1.5 Gate Turn O Thyristors (GTO)

3.1.6 Reverse Conducting Thyristors (RCT)

RCT can conduct in reverse direction without any control input. Its made of an SCR with a
diode in an antiparallel configuration for the reverse conduction of the reactive load currents.
It is used in applications where reverse blocking is not necessary. However, it has low reverse
voltage rating than its forward voltage rating. Because of the reverses current flow, it allows
the RCT to drain its carriers from its junction relatively fast, providing much fast switching
speed. The reverse conducting thyristor is a thyristor associated with an anti-parallel diode on
a silicon crystal: Insofar as this eliminates a block in the thyristor, losses can be considerably
reduced. The two components are prevented from interfering with each other by means of
built-in protection rings. A simple method for assessing heat stress is described, as are several
applications (chopper, converter, electric filter) for which this thyristor offers technical and
cost advantages.

The reverse conducting thyristor (RCT) is differentiating itself from the normal high-

power thyristor by having an integrated reverse diode. Because of the reverse diode
this thyristor is not capable of reverse blocking. These devices are advantageous where
a reverse or freewheel diode must be used.

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 Diagram 3.1.6 Reverse Conducting Thyristors (RCT)

3.1.7 Integrated Gate-Commutated Thyristor (IGCT)

IGCT integrates a gate-commutated thyristor (GCT) with a multi-layer PCB (printed circuit
board) for gate drives circuitry. The GCT is a hard-switched device that uses very fast-rising
and large current pulse to drain all current from its cathode to ensure fast turn-off. It has an
integrated diode for conduction of reactive load. An IGCT is turned on by providing gate
current. It is turned off by the multi-layered PCB that provides a factorising, large current of
approximately 4Kv/μs. It drains out all the current from its cathode & it turns-off
immediately

3.2 Function of the gate terminal

The thyristor has three p-n junctions (serially named J1, J2, J3 from the anode). When the
anode is at a positive potential VAK with respect to the cathode with no voltage applied at
the gate, junctions J1 and J3 are forward biased, while junction J2 is reverse biased. As J2 is
reverse biased, no conduction takes place (Off state). Now if VAK is increased beyond the
breakdown voltage VBO of the thyristor, avalanche breakdown of J2 takes place and the
thyristor starts conducting (On state). If a positive potential VG is applied at the gate terminal
with respect to the cathode, the breakdown of the junction J2 occurs at a lower value of VAK.
By selecting an appropriate value of VG, the thyristor can be switched into the on state
quickly. Once avalanche breakdown has occurred, the thyristor continues to conduct,
irrespective of the gate voltage, until: (a) the potential VAK is removed or (b) the current

14
through the device (anode−cathode) becomes less than the holding current specified by the
manufacturer. Hence VG can be a voltage pulse, such as the voltage output from a UJT
relaxation oscillator. The gate pulses are characterized in terms of gate trigger voltage (VGT)
and gate trigger current (IGT). Gate trigger current varies inversely with gate pulse width in
such a way that it is evident that there is a minimum gate charge required to trigger the
thyristor.

Diagram 3.2 Function of the gate terminal

3.3 Switching characteristics

In a conventional thyristor, once it has been switched on by the gate terminal, the device
remains latched in the on-state (i.e. does not need a continuous supply of gate current to
remain in the on state), providing the anode current has exceeded the latching current. As
long as the anode remains positively biased, it cannot be switched off unless the current drops
below the holding current (IH). In normal working conditions the latching current is always
greater than holding current. In the above figure IL has to come above the IH on y-axis since
IL>IH. A thyristor can be switched off if the external circuit causes the anode to become
negatively biased (a method known as natural, or line, commutation). In some applications
this is done by switching a second thyristor to discharge a capacitor into the anode of the first
thyristor. This method is called forced commutation. After the current in a thyristor has
extinguished, a finite time delay must elapse before the anode can again be positively biased
and retain the thyristor in the off-state. This minimum delay is called the circuit commutated
turn off time. Attempting to positively bias the anode within this time causes the thyristor to
be self-triggered by the remaining charge carriers (holes and electrons) that have not yet
recombined. For applications with frequencies higher than the domestic AC mains supply
(e.g. 50 Hz or 60 Hz), thyristors with lower values of two are required. Such fast thyristors

15
can be made by diffusing heavy metal ions such as gold or platinum which act as charge
combination centres into the silicon. Today, fast thyristors are more usually made by electron
or proton irradiation of the silicon, or by ion implantation. Irradiation is more versatile than
heavy metal doping because it permits the dosage to be adjusted in fine steps, even at quite a
late stage in the processing of the silicon.

Diagram 3.3 Switching Characteristics

3.4 Turn on Methods

Generally, a thyristor turns-on by increasing its anode current. This can be achieved using
many ways. These turn-on techniques depend on various parameters of a thyristor & its
characteristics them for specific applications. But some of them are destructive and should be
avoided or protect the device from it.

High Voltage
By increasing the forward anode-to-cathode voltage greater than its forward breakdown
voltage, the thyristor junction will break. It results in a large current flow, which will turn it
into the conduction state. This type of turn-on is destructive and should be avoided.

Gate Current
When the thyristor is forward biased i.e. anode terminal voltage is greater than the cathode
terminal. Applying a positive gate voltage with respect to the cathode terminal will provide
enough gate current to turn on the device.

Thermal

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Heat can switch a thyristor into the conduction state. If its temperature is high enough, it will
produce electron-hole pairs, which results in an increase in the leakage current. This type of
turn-on is normally avoided. Because it may cause thermal runaway; the process in which a
heavy current flow due to high temperature, in turn, releases more heat energy & construct a
positive feedback in an uncontrolled manner.

Light
Just like photodiodes, if light (photons) reaches the junctions of a thyristor, it will produce
electron-hole pairs. These electron-hole pairs result in an increase in current flow &
ultimately switching the thyristor into the conduction state.

dv/dt
dv/dt is the time rate of change of voltage. As we know that the junctions have capacitance.
So, if the anode-to-cathode voltage rising rate is sufficiently high enough, it may charge the
capacitive junction to turn the thyristor into the conduction state. However, they have a
maximum allowable limit for dv/dt. Increasing the dv/dt from that specified limit might
destroy the device.

3.5 Applications of Thyristor

Thyristor is used in various applications such as:
 Mainly used in variable speed motor drives.
 Used in controlling high power electrical application.
 Used mainly in AC motors, lights, welding machines etc.
 Used in fault current limiter and circuit breaker.
 Fast switching speed and low conduction is possible in ETO thyristor.
 Used as light dimmers in television, movie theatres.
 Used in photography for ashes.
 Can be used in burglar alarms.
 Used in electric fan speed control.

3.6 Thyristors failure modes

Thyristor manufacturers generally specify a region of safe firing defining acceptable levels of
voltage and current for a given operating temperature. The boundary of this region is partly

17
determined by the requirement that the maximum permissible gate power (PG), specified for
a given trigger pulse duration, is not exceeded as well as the usual failure modes due to
exceeding voltage, current or power ratings, thyristors have their own particular modes of
failure, including:

Turn on di/dt
In which the rate of rise of on-state current after triggering is higher than can be supported by
the spreading speed of the active conduction area (SCRs & triacs).

Forced commutation
In which the transient peak reverse recovery current causes such a high voltage drops in the
sub-cathode region that it exceeds the reverse breakdown voltage of the gate cathode diode
junction (SCRs only).

Switch on dv/dt
The thyristor can be spuriously fired without trigger from the gate if the anode-to-cathode
voltage rise-rate is too great.

3.7 Advantages of Thyristor

The advantages of Thyristor include:
 Low cost.
 Can handle large voltage/ current.
 Able to control AC power.
 Very easy to control.
 Easy to turn on.
 GTO or Gate Turnoff Thyristor has high efficiency.
 Takes less time to operate.
 Thyristor switches can operate with large frequency.
 Requires less space when compared to mechanical switches.
 Can be used for robust operations.
 Maintenance cost of Thyristor is very less.
 Very easy to use for sophisticated controlling.

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 Power handling capacity is very good.
 Can be used as an oscillator in digital circuits.
 Can be connected in parallel and in series to provide electronic control at high power
levels.
 Thyristors conduct current only in one direction.
 It can be used as a protection device, like a fuse in a power line

3.8 Disadvantages of Thyristor

The disadvantages of Thyristor include:
 Cannot be used for higher frequencies.
 In AC circuit, Thyristor needs to be turned on each cycle.
 SCR takes time to turn on and off.
 This causes delay or damage in the load.
 It can stop the motor when connected, but cannot hold it stationary.
 The response rate of Thyristor is very low.
 Not much use in DC circuits, as the Thyristor cannot be cut off just by removing the gate
drive.
 Low Efficiency.
 Latching and Holding current is more in GTO Thyristor.
 Reverse blocking capability of voltage is less than forward blocking capability.

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 Reliability of TRIAC thyristor is less than SCR.
 It cannot be negative
 It cannot be used higher frequency
 It cannot be easily turn off
 In the AC circuit, it needs to be turn on each cycle
 Gate current cannot be negative
 Low switching speed

Chapter 4: Conclusion

4.0 Conclusion
In conclusion, application of thyristors are wide, they are mainly used where high currents
and voltages are involved, and are often used to control alternating currents, where the
change of polarity of the current causes the device to switch off automatically, referred to as
"zero cross" operation. The device can be said to operate synchronously; being that, once the
device is triggered, it conducts current in phase with the voltage applied over its cathode to
anode junction with no further gate modulation being required, i.e., the device is biased fully
on. This is not to be confused with asymmetrical operation, as the output is unidirectional,
flowing only from cathode to anode, and so is asymmetrical in nature. Thyristors can be used
as the control elements for phase angle triggered controllers, also known as phase fired
controllers.

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They can also be found in power supplies for digital circuits, where they are used as a sort of
"enhanced circuit breaker" to prevent a failure in the power supply from damaging
downstream components. A thyristor is used in conjunction with a Zener diode attached to its
gate, and if the output voltage of the supply rises above the Zener voltage, the thyristor will
conduct and short-circuit the power supply output to ground (in general also tripping an
upstream breaker or fuse). This kind of protection circuit is known as a crowbar, and has the
advantage over a standard circuit breaker or fuse in that it creates a high-conductance path to
ground for the damaging supply voltage and potentially for stored energy in the system being
powered.

For decades, thyristors have been used as light dimmers in television, motion pictures,
and theatre, where they replaced inferior technologies such as autotransformers and rheostats.
They have also been used in photography as a critical part of flashes (strobes).

Chapter 5: Reference

5.0 Reference
 https://electricalbaba.com/switching-characteristics-scr/
 https://www.electrical4u.com/thyristor-triggering/
 https://www.britannica.com/technology/thyristor
 https://www.electronicshub.org/thyristor-basics/
 https://ethw.org/Milestones:SCR/Thyristor,_1957
 https://www.tdworld.com/digital-innovations/hvdc/article/20969683/a-short-history-on-
the-thyristor-valve
 https://electricalfundablog.com/thyristor-working-vi-characteristics/

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 https://allabouteng.com/thyristor-working-types-applications/

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