APM9948J

Dual N-Channel Enhancement Mode MOSFET

Features Pin Description

D1
•
D1
60V/4A, D2
D2
RDS(ON) = 60mΩ(typ.) @ VGS = 10V
RDS(ON) = 72mΩ(typ.) @ VGS = 4.5V S1
G1
• Super High Dense Cell Design S2
G2
• Reliable and Rugged
• Lead Free and Green Devices are Available Top View of DIP−8
(RoHS Compliant) (8) (7) (6) (5)
D1 D1 D2 D2

Applications
(2) (4)
• Power Management in DC/DC Converter, DC/AC G1 G2

Inverter Systems.

S1 S2
(1) (3)

N-Channel MOSFET
Ordering and Marking Information
APM9948 Package Code
J : DIP-8
Operating Junction Temp. Range
Assembly Material C : -55 to 150 °C
Handling Code Handling Code
Temp. Range TU : Tube
Package Code Assembly Material
L : Lead Free Device
G : Halogen and Lead Free Device

APM9948 J : APM9948 XXXXX - Date Code

XXXXX
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.

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 APM9948J

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol Parameter Rating Unit

VDSS Drain-Source Voltage 60
V
VGSS Gate-Source Voltage ±20
ID* Continuous Drain Current 4
VGS=10V A
IDM* 300µs Pulsed Drain Current 16
IS* Diode Continuous Forward Current 2.5 A
TJ Maximum Junction Temperature 150
°C
TSTG Storage Temperature Range -55 to 150
TA=25°C 2.5
PD* Maximum Power Dissipation W
TA=100°C 1
RθJA* Thermal Resistance-Junction to Ambient 50 °C/W

Note:
*Surface Mounted on 1in2 pad area, t ≤ 10sec.

Electrical Characteristics (TA = 25°C unless otherwise noted)

APM9948J
Symbol Parameter Test Condition Unit
Min. Typ. Max.

Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 60 V
VDS=48V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TA=25°C 30
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1 1.9 3 V
IGSS Gate Leakage Current VGS=±16V, VDS=0V ±10 µA
VGS=10V, IDS=4A 60 85
RDS(ON) a Drain-Source On-state Resistance mΩ
VGS=4.5V, IDS=3A 72 100
Diode Characteristics
VSDa Diode Forward Voltage ISD=2.5A, VGS=0V 0.8 1.1 V
trr Reverse Recovery Time 28 ns
ISD=4A, dlSD/dt=100A/µs
Qrr Reverse Recovery Charge 28 nC

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 APM9948J

Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)

APM9948J Unit
Symbol Parameter Test Condition
Min. Typ. Max.
b
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 4.3 Ω
Ciss Input Capacitance 610
VGS=0V,
Coss Output Capacitance VDS=30V, 47 pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance 30
td(ON) Turn-on Delay Time 7 14
Tr Turn-on Rise Time VDD=30V, RL=30Ω, 6 12
IDS=1A, VGEN=10V, ns
td(OFF) Turn-off Delay Time RG=6Ω 26 48
Tf Turn-off Fall Time 4 8

Gate Charge Characteristics b

Qg Total Gate Charge 14.2 20
VDS=30V, VGS=10V,
Qgs Gate-Source Charge 1.9 nC
IDS=4A
Qgd Gate-Drain Charge 3.2

Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.

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 APM9948J

Typical Characteristics

Power Dissipation Drain Current

3.0 5

2.5
4

ID - Drain Current (A)

2.0
Ptot - Power (W)

1.5

2
1.0

1
0.5

o o
TA=25 C TA=25 C,VG=10V
0.0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)

Safe Operation Area Thermal Transient Impedance

50 2
Normalized Transient Thermal Resistance

1 Duty = 0.5
10
it
ID - Drain Current (A)

0.2
Lim
n)
s(o

0.1
Rd

300µs
1 0.05
1ms
0.1 0.02
10ms

100ms
0.1
1s 0.01

DC
2
o Single Pulse Mounted on 1in pad
TA=25 C o
RθJA : 50 C/W
0.01 0.01
0.01 0.1 1 10 100 300 1E-4 1E-3 0.01 0.1 1 10 30

VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

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 APM9948J

Typical Characteristics (Cont.)

Output Characteristics Drain-Source On Resistance

16 100
VGS= 4,4.5,5,6,7,8,9,10V 95
14
90

RDS(ON) - On - Resistance (mΩ)

12 85
ID - Drain Current (A)

80 VGS=4.5V
10
75
3.5V
8 70
65 VGS=10V
6
60
4 55
50
2 3V
45
0 40
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12 14 16

VDS - Drain-Source Voltage (V) ID - Drain Current (A)

Drain-Source On Resistance Gate Threshold Voltage

90 1.8
ID=4A IDS =250µA
85 1.6
Normalized Threshold Voltage
RDS(ON) - On - Resistance (mΩ)

1.4
80
1.2
75
1.0
70
0.8
65
0.6
60
0.4

55 0.2

50 0.0
2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

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 APM9948J

Typical Characteristics (Cont.)

Drain-Source On Resistance Source-Drain Diode Forward

2.0 20
VGS = 10V
1.8 IDS = 4A 10
Normalized On Resistance

1.6
o
Tj=150 C

IS - Source Current (A)

1.4

1.2
o
Tj=25 C
1.0 1

0.8

0.6

0.4
o
RON@Tj=25 C: 60m Ω
0.2 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)

Capacitance Gate Charge

1000 10
Frequency=1MHz VDS=30V
900 9
IDS= 4A
VGS - Gate - source Voltage (V)

800 8

700 Ciss
7
C - Capacitance (pF)

600 6

500 5

400 4

300 3

200 2

100 Coss 1
Crss
0 0
0 5 10 15 20 25 30 0 3 6 9 12 15

VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

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 APM9948J

Package Information

DIP-8
D

E1
A2 E

0.38
A1

D1 b e c eA

b2 eB

S DIP-8
Y
M MILLIMETERS INCHES
B
O
L MIN. MAX. MIN. MAX.
A 5.33 0.210
A1 0.38 0.015
A2 2.92 4.95 0.115 0.195
b 0.36 0.56 0.014 0.022
b2 1.14 1.78 0.045 0.070
c 0.20 0.35 0.008 0.014
D 9.01 10.16 0.355 0.400
D1 0.13 0.005
E 7.62 8.26 0.300 0.325
E1 6.10 7.11 0.240 0.280
e 2.54 BSC 0.100 BSC
eA 7.62 BSC 0.300 BSC
eB 10.92 0.430
L 2.92 3.81 0.115 0.150

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 APM9948J

Reflow Condition (IR/Convection or VPR Reflow)

TP tp
Critical Zone
TL to TP
Ramp-up

TL
Temperature

tL
Tsmax

Tsmin
Ramp-down
ts
Preheat

t 25 °C to Peak
25

Time
Reliability Test Program

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C, 5 sec
HOLT MIL-STD-883D-1005.7 1000 Hrs Bias @125°C
PCT JESD-22-B, A102 168 Hrs, 100%RH, 121°C
TST MIL-STD-883D-1011.9 -65°C~150°C, 200 Cycles

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate
3°C/second max. 3°C/second max.
(TL to TP)
Preheat
100°C 150°C
- Temperature Min (Tsmin)
- Temperature Max (Tsmax) 150°C 200°C
60-120 seconds 60-180 seconds
- Time (min to max) (ts)
Time maintained above:
183°C 217°C
- Temperature (TL)
60-150 seconds 60-150 seconds
- Time (tL)
Peak/Classification Temperature (Tp) See table 1 See table 2
Time within 5°C of actual
10-30 seconds 20-40 seconds
Peak Temperature (tp)
Ramp-down Rate 6°C/second max. 6°C/second max.
Time 25°C to Peak Temperature 6 minutes max. 8 minutes max.
Note: All temperatures refer to topside of the package. Measured on the body surface.

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 APM9948J

Classification Reflow Profiles (Cont.)

Table 1. SnPb Eutectic Process – Package Peak Reflow Temperatures
3 3
Package Thickness Volume mm Volume mm
<350 ≥350
<2.5 mm 240 +0/-5°C 225 +0/-5°C
≥2.5 mm 225 +0/-5°C 225 +0/-5°C

Table 2. Pb-free Process – Package Classification Reflow Temperatures

3 3 3
Package Thickness Volume mm Volume mm Volume mm
<350 350-2000 >2000
<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C*
1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*
≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the
stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C)
at the rated MSL level.

Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838

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