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Experiment 6 Voltage Divider Biasing: 1. Objective
Experiment 6 Voltage Divider Biasing: 1. Objective
EXPERIMENT 6
VOLTAGE DIVIDER BIASING
1. OBJECTIVE
2. INTRODUCTION
The advantage of using voltage divider bias is that the base current is made small
compared to the currents through the two base (“voltage divider”) resistors. With this
property, transistor beta changes will no longer affect the base voltage and the collector
current.
VE = VB - VBE (6.2)
R1 || R2 RE (6.8)
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DMT 121/3 – Electronic Devices Laboratory Module
4. PROCEDURE
+ 15 V
R1 RC
10 kΩ 1 kΩ
VC
VB 2N3940
VE
R2 RE
4.7 kΩ 1 kΩ
4.1.2 Calculate the expected values of the quiescent dc base voltage (VB),
emitter voltage (VE), collector voltage (VC), and collector emitter voltage
(VCE) using typical value for the base-emitter voltage of a silicon transistor
(0.7 V).
4.1.3 Record these values in Table 6.1.
(NOTE: The pin diagram for the 2N3904 is given in Figure 6.2)
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DMT 121/3 – Electronic Devices Laboratory Module
4.2.3 Take your multimeter and measure VB, VC, VE and VCE.
4.2.4 Record your results in Table 6.1 and make comparison between these
measured values with the expected voltages determined before.
4.2.5 Now measure the quiescent collector current and compare this value
with the expected value (Equation 6.3).
4.2.6 Record this value in Table 6.1.
(NOTE: You should find that the measured Q point lies essentially on the dc
load line)
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DMT 121/3 – Electronic Devices Laboratory Module
+ 15 V
RC
1 kΩ
VC
10 kΩ 2N3940
VE
RE
1 kΩ
4.5.4 Now, plot the values for IC and VCE at cutoff and saturation on the graph
constructed in Step 3.
4.6 Measuring IC and VCE over the „active region’ of the dc load line:
4.6.1 Now, vary the potentiometer so that you are able to measure about five
combinations of IC and VCE.
4.6.2 Record all values in Table 6.2.
4.6.3 Then plot these values on the graph.
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DMT 121/3 – Electronic Devices Laboratory Module
RESULTS:
Transistor 1 Value
VB
VC
VE
VCE
IC
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DMT 121/3 – Electronic Devices Laboratory Module
Cutoff (Step 5)
Saturation (Step 6)
Active Region
(Step 7)
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DMT 121/3 – Electronic Devices Laboratory Module
CALCULATION
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DMT 121/3 – Electronic Devices Laboratory Module
DISCUSSION
RC
+ 12 V R1
Emitter
Base
Collector
R2
Gnd RE
Figure 6.4
A pnp transistor is used with voltage divider bias in the circuit shown above. Calculate
the dc parameters listed in below ( R1 10k, R2 56k, RC 2.7k, RE 1.5k ).
1. V B
2. V E
3. IE
4. VC
5. VCE
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DMT 121/3 – Electronic Devices Laboratory Module
CONCLUSION
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