Professional Documents
Culture Documents
From:
Dr. Ankur Beohar
Assistant Professor, VIT University
Transistor Structures
The bipolar junction transistor (BJT) has three separately
doped regions and contains two pn junctions.
Bipolar transistor is a 3-terminal device.
Emitter (E)
Base (B)
Collector (C)
Cutoff
The amplifier is basically off. There is voltage but
little current.
Both junctions reverse biased
Saturation
The amplifier is full on. There is little voltage but lots
of current.
Both junctions forward biased
OPERATIONS - npn
ACTIVE MODE VBE = V
+
VBE
The base-emitter (B-E) junction
-
is forward biased and the base-
collector (C-B) junction is
reverse-biased,.
Since the B-E junction is
forward biased, electrons
from the emitter are injected
iB
across the B-E junction into
the base IE
Once in the base region, the Some electrons, in passing
electrons are quickly through the base region, recombine
accelerated through the base with majority carrier holes in the
due to the reverse-biased C-B base. This produces the current
region IC IB
TO ILLUSTRATE
B E
C -
VBE
+
IB
+
IE
VBE
-
IE = IB + IB = IB( + 1) IE = IB( + 1)
Now
With IC = IB IB = IC /
Hence,
IE = [ IC / ] ( + 1)
IC = IE [ / + 1 ]
OPERATIONS - pnp
IB
FORWARD ACTIVE MODE IC
B
-
The emitter – base (E- B)
VEB IE
junction is forward biased and
the base-collector (B- C) junction +
is reverse-biased,. VEB = V
E
IE = IS [ e VEB / VT -1 ] = IS e VEB / VT
Based on KCL: IE = IC + IB
pnp Transistor- Active mode
SUMMARY: Circuit Symbols and
Conventions
Based on KCL: IE = IC + IB
npn bipolar transistor simple
block diagram and circuit symbol.
Arrow is on the emitter terminal
that indicates the direction of
emitter current
IC = IB
IC = IE
IE = IB( + 1)
𝜷 𝜶
𝜶= 𝜷=
𝟏+𝜷 𝟏−𝜶
Based on KCL: IE = IC + IB
EXAMPLE
Calculate the collector and emitter currents, given the base current and current gain.
Assume a common-base current gain, = 0.97 and a base current of iB = 25 µA . Also
assume that the transistor is biased forward in the forward active mode.
Answers:
= 85
= 0.9884
IE = 516 A
• EXAMPLE 2
• NPN Transistor
• Reverse saturation current Is = 10-13A with current gain, = 90.
• Based on VBE = 0.685V, determine IC , IB and IE
Answers:
IE = 10-13 (e 0.685/0.026) = 0.0277 A
IC = (90/91)(0.0277) = 0.0274 A
IB = IE – IC = 0.3 mA
BJT: Current-Voltage
Characteristic
IC versus VCE
Common-Emitter Configuration - npn
The Emitter is common to both input
(base-emitter) and output (collector-
emitter).
0V
Operation
The basic structure for an N-P-N bipolar power transistor is
illustrated in figure above. In addition to the N+emitter and P-
base region for the conventional (low-power) bipolar transistor,
the power transistor contains a lightly doped collector (N-drift)
region to support high blocking voltages.