Semiconductor Devices (ECP302)

PN Junction Diode

B. Tech 3rd Sem

Electronics and Computer Sciences

Dr. Sheilza Jain

Electronics Engg. Department
After completing PN Junction/ PN Junction Diode, students will be able to:

 Explain how barrier potential is set up in a PN-junction diode

 state the approximate value of barrier potential in a germanium and a silicon diode
 Explain the meaning of space-charge region (depletion region),
 Explain the conduction property of a forward-biased and reverse biased diode
 Draw the forward and reverse characteristics of germanium and silicon diodes
 Explain the effect of temperature on the reverse saturation current
 calculate the static and the dynamic resistance of a diode from its V-1 characteristics
 Zener breakdown, avalanche breakdown •
 explain the difference between germanium diodes and silicon diodes on the basis of
forward voltage drop and reverse saturation current
 Draw the characteristics of an ideal diode
PN Junction :
No external voltage

Forward Biased

Reverse Biased
 The reverse-biased PN-junction diode has a region of high resistivity
(space charge or depletion region) sandwiched in between two regions (P
and N regions away from the junction) of relatively low resistivity. The P
and N regions act as the plates of a capacitor and the space-charge region
acts as the dielectric. Thus, the PN-junction in reverse bias has an effective
capacitance called transition or depletion capacitance.

Effect of doping concentration on width of depletion layer:

 Doping of only p-type is greater than that of N layer:

As doping of p type is greater and hence there would be more

number of holes per unit area in P- type region and to recombine
with electrons of n-type region we need the same number of holes.
(as depletion layer is electrically (Neutral). As we have the more
density of holes and hence lesser region would provide enough
number of holes and hence depletion width in the p-type would be
lesser as shown below:

Wp<WN
  Doping of only n-type is greater: As doping of n type is greater
and hence there would be more number of electrons per unit area in
n-type region and to recombine with holes of p-type region we need
the same number of electrons. As we have the more density of
electrons and hence lesser region would provide enough number of
electrons and hence depletion width in the n-type would be lesser as
shown below:

Doping of both p-type & n-type is increased: As doping of both

p-type & n-type is greater and hence there would be more number of
electrons per unit area in both regions and to develop same level of
barrier we need the same number of electrons and holes. As we have
the more density of electrons and holes hence lesser region would
provide enough number of charge carriers and hence depletion width in
the both p-type & n-type would be lesser as shown below:
 

The depletion layer more deeply penetrate into lightly doped

region.

 Effect of width of layer on width of depletion layer:

 
 If doping concentration is same but the width of one layer
is more than that of others
Then width of depletion layer will be more in layer having
more width.

Reverse breakdown
We have seen that a PN-junction allows a very small current to flow when it is
reverse biased. This current is due to the movement of minority carriers. It is almost
independent of the voltage applied. However, if the reverse bias is made too high,
the current through the PN-junction increases abruptly.
The voltage at which this phenomenon occurs is called breakdown voltage. At this
voltage, the crystal structure breaks down. In normal applications, this condition is
avoided. The crystal structure will return to normal when the excess reverse bias is
removed, provided that overheating has not permanently damaged the crystal.
There are two processes which can cause junction breakdown.
 Zener breakdown and
 avalanche breakdown.
When reverse bias is increased, the electric field at the junction also increases. High
elect1ic field causes covalent bonds to break. Thus, a large number of carriers are
generated. This causes a large current to flow. This mechanism of breakdown is
called zener breakdown. In case of avalanche breakdown, the increased electric field
causes increase in the velocities of minority carriers. These high energy carriers
break covalent bonds, thereby generating more carriers. Again, these generated
carriers are accelerated by the electric field. They break more covalent bonds during
their travel. A chain reaction is thus established, creating a large number of carriers.
This gives rise to a high reverse current. This mechanism of breakdown is called
avalanche breakdown.

Comparison Chart
Basis For
Avalanche Breakdown Zener Breakdown
Comparison

Definition The avalanche The process in which the

breakdown is a electrons are moving across the
phenomena of barrier from the valence band
increasing the free of the p-type material to the
electrons or electric conduction band of the lightly
current in filled n-material is known as the
Basis For
Avalanche Breakdown Zener Breakdown
Comparison

semiconductor and Zener breakdown.

insulating material by
applying the higher
voltage.

Depletion Thick Thin

Region

Junction Destroy Not Destroy

Electric Field Weak Strong

Produces Pairs of electron and Electrons.

hole.

Doping Low Heavy

Reverse High Low

potential

Temperature Positive Negative

Coefficient

Ionization Because of collision Because of Electric Field

Breakdown Directly proportional to Inversely proportional to

Voltage temperature. temperature.

After Voltage vary. Voltage remains constant

Breakdown
Breakdown Characteristic Graph
The graphical representation of the Avalanche and Zener breakdown is shown in the
figure below.

Definition of Avalanche Breakdown

The avalanche breakdown is the breakdown mechanism of the PN – junction diodes which
have thinner region. In this breakdown, when the electric field is applied across the
diode, the velocity of the charge carrier increases. This charge carrier collides with the
other atoms and creates the pairs of hole and electrons.

The free charge carrier further collides with other atoms and creates more pairs of
electron and hole. These free electrons start moving across the junction and develop the
reverse bias current. The reverse bias current completely destroys the junction. And once
the junction breakdown occurs, it cannot regain its original position.

Definition of Zener Breakdown

The junction breakdown mechanism which occurs in the heavily doped thin region is
called Zener breakdown. In this mechanism when the high electric field is applied across
the junction, the charge carrier starts jumping across the junction. These electrons
constitute the heavy current in the reversed direction. In Zener breakdown, the
temporary breakdown of junction occurs. The junction regains its original position when
the reverse voltage removes.

Key Differences Between Avalanche & Zener Breakdown

1. The breakdown which occurs because of the collision of the electrons inside the PN-
junction is called avalanche breakdown, whereas the Zener breakdown occurs when the
heavy electric field is applied across the PN- junction.
2. The avalanche breakdown occurs in the thick region, whereas the Zener breakdown
occurs in the thin region.
3. After the avalanche breakdown, the junction of the diode will not regain its original
position, whereas after the Zener breakdown the junction regains its original position.
4. The existence of the electric field is more on the Zener breakdown as compared to
the avalanche breakdown. Because the mechanism of Zener breakdown occurs in the
heavily doped region.
5. The avalanche breakdown produces the pairs of electrons and holes because of the
thermal effects, whereas the Zener diode produces the electrons.
6. The avalanche breakdown occurs in low doping material, whereas the Zener
breakdown occurs in high doping material.
7. The avalanche breakdown voltage causes because of high reverse potential
because it is lightly doped whereas the Zener breakdown is because of low reverse
potential.
8. The temperature coefficient of the avalanche breakdown is positive, whereas the
temperature coefficient of Zener breakdown is negative.
o Note: The positive temperature coefficient means the temperature of the
material increases with the reverse voltage and negative temperature coefficient means
temperature decreases with the potential differences.
9. In avalanche breakdown, the mechanism of ionisation occurs because of collision of
electrons, whereas in the Zener breakdown ionisation occurs because of the electric
field.
10. The avalanche breakdown voltage is directly proportional to the temperature,
whereas the  Zener breakdown voltage is inversely proportional to the temperature.

The voltage of Zener breakdown is less than the Avalanche breakdown.