Electronics Circuit -1

Lab Report
Name of The Experiment – Study of Diode Characteristics

Students ID –
Name of the Experiment –

Study of Diode Characteristics

Objective –

To study the I-V characteristics of silicon p-n junction diodes in forward and
reverse bias.

Component/ Materials Required –

Materials Quantity
p-n Junction diode(N4003) One
Resistor (1k) One
Trainer Board One
Dc Power Supply One
Signal Generator One
Oscilloscope one
Chords and wire lot

Biasing of P-N Junction Diode –

Forward bias operation

The P-N junction supports uni-directional current flow. If +ve terminal of the input
supply is connected to P-side and –ve terminal is connectedthe n side, then diode
is said to be forward biasedcondition. In this condition the height of the potential
barrier at the junction is lowered by an amount equal to given forward biasing
voltage. Both the holes from p-side and electrons from n-side crossthe junction
simultaneously thereby decreasing the depleted region. This constitutesa forward
current (majority carrier movement–diffusion current). Assuming current flowing
through the diode to be very large, the diode can be approximated as short-
circuited switch.Diode offers a very small resistance called forward resistance(few
ohms)
Reverse bias operation

If negative terminal of the input supply is connected to p-sideand –ve terminal is

connected to n-side then the diode is said to be reverse biased. In this condition
an amount equal to reverse biasing voltage increases the height of the potential
barrier at the junction. Both the holes on P-side and electrons on N-side tend to
move away from the junction there by increasing the depleted region.However
the process cannot continue indefinitely, thus a small current called reverse
saturation current continues to flow in the diode. This current is negligible; the
diode can be approximated as an open circuited switchit offers a very high
resistancecalled reverse resistance(few Kiloohms).
Forward Bias Diode Procedure –
 Connect the circuit as shown.
 Initially vary Regulated Power Supply voltage in Va.
 Tabulate different forward current.
 Plot the V-I characteristics.
 Compare the theoretical and practical values.

Vdc Vd Vr Id
0 0.004v 0v 0mA
0.2 0.268v 0.026v 0.026mA
0.4 0.400v 0.127v 0.127mA
0.6 0.504v 0.309v 0.309mA
0.8 0.543v 0.462v 0.462mA
1.0 0.580v 0.668v 0.668mA
1.2 0.590v 0.824v 0.824mA
1.4 0.600v 1.024v 1.024mA
1.6 0.607v 1.200v 1.200mA
1.8 0.615v 1.447v 1.447mA
2.0 0.620v 1.573v 1.573mA
2.2 0.627v 1.834v 1.834mA
2.4 0.631v 2.044v 2.044mA
2.6 0.634v 2.177v 2.177mA
3.0 0.639v 2.395v 2.395mA
10 0.699v 9.314v 9.314mA
12 0.701v 11.32v 11.32mA
14 0.713v 13.28v 13.28mA

Reverse Bias Diode Procedure –

 Connect the circuit as shown.
 Initially vary Regulated Power Supply voltage in Va.
 Tabulate different forward current.
 Plot the V-I characteristics.
  Compare the theoretical and practical values.

V Vd Vr
0v 0.7mv 0
2v 2.053mv 0
4v 4.01mv 0
6v 6.07mv 0
8v 8.03mv 0
10v 10.03mv 0
12v 12.07mv 0
14v 14.01mv 0
16v 16.09mv 0
18v 18.03mv 0
20v 20.01mv 0

Result –

Volt-Ampere characteristics of P-N Diode are studied.

Analyzing the characteristics of PN diode are studied

Calculating the resistance in forward bias and reverse bias are studied.