MDU1516 – Single N-Channel Trench MOSFET 30V

MDU1516
Single N-channel Trench MOSFET 30V, 47.6A, 9.0mΩ

General Description Features

The MDU1516 uses advanced MagnaChip’s MOSFET  VDS = 30V
Technology, which provides high performance in on-state  ID = 47.6A @VGS = 10V
resistance, fast switching performance and excellent  RDS(ON)
quality. MDU1516 is suitable device for DC/DC Converter < 9.0 mΩ @VGS = 10V
and general purpose applications. < 14.0 mΩ @VGS = 4.5V
 100% UIL Tested
 100% Rg Tested

D D D D D D D D D

G
S S S G G S S S

PowerDFN56
S

Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol Rating Unit

Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±20 V
TC=25oC 47.6
TC=70oC 38.0
Continuous Drain Current (1) o
ID A
TA=25 C 18.6(3)
TA=70oC 14.9(3)
Pulsed Drain Current IDM 100 A
o
TC=25 C 35.7
TC=70oC 22.8
Power Dissipation o
PD W
TA=25 C 5.5(3)
TA=70oC 3.5(3)
(2)
Single Pulse Avalanche Energy EAS 53.0 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C

Thermal Characteristics

Characteristics Symbol Rating Unit

(1)
Thermal Resistance, Junction-to-Ambient RθJA 22.7 o
C/W
Thermal Resistance, Junction-to-Case RθJC 3.5

Feb. 2014. Version 1.3 1 MagnaChip Semiconductor Ltd.

 MDU1516 – Single N-Channel Trench MOSFET 30V
Ordering Information

Part Number Temp. Range Package Packing Quantity Rohs Status

MDU1516URH -55~150oC PowerDFN56 Tape & Reel 3000 units Halogen Free

Electrical Characteristics (TJ =25oC)

Characteristics Symbol Test Condition Min Typ Max Unit

Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 30 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.3 1.9 2.7
VDS = 30V, VGS = 0V - - 1
Drain Cut-Off Current IDSS
TJ=55oC - - 5 μA
Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1
VGS = 10V, ID = 14A - 7.8 9.0
Drain-Source ON Resistance RDS(ON) TJ=125oC - 11.3 13.0 mΩ
VGS = 4.5V, ID = 11A - 11.7 14.0
Forward Transconductance gfs VDS = 5V, ID = 10A - 31 - S
Dynamic Characteristics
Total Gate Charge Qg(10V) 11.0 14.6 18.3
Total Gate Charge Qg(4.5V) VDS = 15.0V, ID = 14A, 5.2 6.9 8.6
nC
Gate-Source Charge Qgs VGS = 10V - 3.0 -
Gate-Drain Charge Qgd - 2.6 -
Input Capacitance Ciss 662 882 1103
VDS = 15.0V, VGS = 0V,
Reverse Transfer Capacitance Crss 65 86 108 pF
f = 1.0MHz
Output Capacitance Coss 134 178 223
Turn-On Delay Time td(on) - 10.3 -
Rise Time tr VGS = 10V, VDS = 15.0V, - 10.6 -
ns
Turn-Off Delay Time td(off) ID = 14A , RG = 3.0Ω - 23.0 -
Fall Time tf - 7.4 -
Gate Resistance Rg f=1 MHz 2.0 3.0 4.5 Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 14A, VGS = 0V - 0.8 1.1 V
Body Diode Reverse Recovery Time trr - 19.5 29.3 ns
IF = 14A, dl/dt = 100A/μs
Body Diode Reverse Recovery Charge Qrr - 11.0 16.5 nC

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7)

2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 18A, VDD = 27V, VGS = 10V
3. T < 10sec.

Feb. 2014. Version 1.3 2 MagnaChip Semiconductor Ltd.

 MDU1516 – Single N-Channel Trench MOSFET 30V
30 16
VGS = 10V
4.0V

Drain-Source On-Resistance [mΩ]

VGS = 4.5V
4.5V
12
ID, Drain Current [A]

5.0V
20
3.5V
VGS = 10V
8

10

4
3.0V

0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 5 10 15 20 25 30

VDS, Drain-Source Voltage [V] ID, Drain Current [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

1.8 100

※ Notes : ※ Notes :
1. VGS = 10 V ID = 14.0A
1.6 2. ID = 16.0 A
Drain-Source On-Resistance

Drain-Source On-Resistance

80
RDS(ON), (Normalized)

1.4
RDS(ON) [mΩ ],

60

1.2

40
1.0

TA = 25℃
20
0.8

0.6 0
-50 -25 0 25 50 75 100 125 150 2 3 4 5 6 7 8 9 10

TJ, Junction Temperature [ C]

o VGS, Gate to Source Volatge [V]

Fig.3 On-Resistance Variation with Fig.4 On-Resistance Variation with

Temperature Gate to Source Voltage

16
※ Notes :
※ Notes : VGS = 0V
VDS = 5V
1
10
IDR, Reverse Drain Current [A]

12
ID, Drain Current [A]

TA=25℃
0
8 10
TA=25℃

4
-1
10

0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

0 1 2 3 4 5
VSD, Source-Drain voltage [V]
VGS, Gate-Source Voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

Feb. 2014. Version 1.3 3 MagnaChip Semiconductor Ltd.

 MDU1516 – Single N-Channel Trench MOSFET 30V
10 1200
※ Note : ID = 14A Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
VDS = 15V
Crss = Cgd
Ciss
8
VGS, Gate-Source Voltage [V]

900

Capacitance [pF]
6

600

※ Notes ;
300 Coss
1. VGS = 0 V
2 2. f = 1 MHz
Crss

0 0
0 4 8 12 16 0 5 10 15 20 25 30
QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

10
2 60

10 ms
50
100 ms
1
1s
10
ID, Drain Current [A]
ID, Drain Current [A]

10s 40
DC

30

0 Operation in This Area

10 is Limited by R DS(on)
20

10
-1
Single Pulse
10 TJ=Max rated
TC=25℃
0
-1 0 1 2 25 50 75 100 125 150
10 10 10 10

VDS, Drain-Source Voltage [V] TA, Case Temperature [℃]

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs.
Case Temperature

1 1
10 10
ZJA(t), Thermal Response
ZJC(t), Thermal Response

0 0
10 10
D=0.5 D=0.5
0.2
0.2

0.1 0.1
-1 -1
10 10
0.05 0.05

0.02 0.02

0.01
-2 -2 0.01 * Notes :
10 ? Notes : 10
Duty Factor, D=t1/t2 single pulse Duty Factor, D=t1/t2
PEAK TJ = PDM * ZJC * RJC(t) + TC PEAK TJ = PDM * ZJA * RJA(t) + TA

single pulse

-3 -3
10 10
-4 -3 -2 -1 0 1 2 3 -4 -3 -2 -1 0 1 2 3
10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10
t1, Rectangular Pulse Duration [sec] t1, Rectangular Pulse Duration [sec]

Fig.11 Transient Thermal Response Fig.12 Transient Thermal Response

Curve (Junction-to-Case) Curve (Junction-to-Ambient)

Feb. 2014. Version 1.3 4 MagnaChip Semiconductor Ltd.

 MDU1516 – Single N-Channel Trench MOSFET 30V
Package Dimension

PowerDFN56 (5x6mm)
Dimensions are in millimeters, unless otherwise specified

MILLIMETERS
Dimension
Min Max
A 0.90 1.10
b 0.33 0.51
C 0.20 0.34
D1 4.50 5.10

D2 - 4.22

E 5.90 6.30
E1 5.50 6.10
E2 - 4.30
e 1.27BSC
H 0.41 0.71
K 0.20 -
L 0.51 0.71
α 0° 12°

Feb. 2014. Version 1.3 5 MagnaChip Semiconductor Ltd.

 MDU1516 – Single N-Channel Trench MOSFET 30V

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

Feb. 2014. Version 1.3 6 MagnaChip Semiconductor Ltd.