MDF18N50 N-channel MOSFET 500V

MDF18N50
N-Channel MOSFET 500V, 18 A, 0.27Ω

General Description Features

The MDF18N50 uses advanced MagnaChip’s MOSFET
VDS = 500V
Technology, which provides low on-state resistance, high
ID = 18A @VGS = 10V
switching performance and excellent quality.
RDS(ON) ≤ 0.27Ω @VGS = 10V

MDF18N50 is suitable device for SMPS, high speed switching

and general purpose applications. Applications

Power Supply

PFC

High Current, High Speed Switching

Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol Rating Unit

Drain-Source Voltage VDSS 500 V
Gate-Source Voltage VGSS ±30 V
o
TC=25 C 18 A
Continuous Drain Current (※) o
ID
TC=100 C 11 A
Pulsed Drain Current(1) IDM 72 A
o
TC=25 C 37 W
Power Dissipation PD
Derate above 25 C o
0.29 W/ oC

Peak Diode Recovery dv/dt(3) Dv/dt 4.5 V/ns

Single Pulse Avalanche Energy(4) EAS 950 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C
※ Id limited by maximum junction temperature

Thermal Characteristics

Characteristics Symbol Rating Unit

(1)
Thermal Resistance, Junction-to-Ambient RθJA 62.5 o
(1)
C/W
Thermal Resistance, Junction-to-Case RθJC 3.4

Mar 2009. Version 0.0 1 MagnaChip Semiconductor Ltd.

 MDF18N50 N-channel MOSFET 500V
Ordering Information

Part Number Temp. Range Package Packing RoHS Status

MDF18N50 -55~150oC TO-220F Tube Halogen Free

Electrical Characteristics (Ta =25oC)

Characteristics Symbol Test Condition Min Typ Max Unit

Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 500 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3.0 - 5.0
Drain Cut-Off Current IDSS VDS = 500V, VGS = 0V - - 1 µA
Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 9.0A 0.22 0.27 Ω
Forward Transconductance gfs VDS = 40V, ID = 9.0A - 13 - S
Dynamic Characteristics
Total Gate Charge Qg - 48 -
Gate-Source Charge Qgs VDS = 400V, ID = 18.0A, VGS = 10V(3) - 12 - nC
Gate-Drain Charge Qgd - 15 -
Input Capacitance Ciss - 2430
Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0MHz - 10 pF
Output Capacitance Coss - 302
Turn-On Delay Time td(on) - 58
Rise Time tr VGS = 10V, VDS = 250V, ID = 18.0A, - 74
ns
Turn-Off Delay Time td(off) RG = 25Ω(3) - 110
Fall Time tf - 44
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
IS - 18 - A
Source Diode Forward Current
Source-Drain Diode Forward
VSD IS = 18.0A, VGS = 0V - 1.4 V
Voltage
Body Diode Reverse Recovery
trr - 375 ns
Time
IF = 18.0A, dl/dt = 100A/µs(3)
Body Diode Reverse Recovery
Qrr - 4.2 µC
Charge

Note :

1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤18.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=5.3mH, IAS=18.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C

Mar 2009. Version 0.0 2 MagnaChip Semiconductor Ltd.

 MDF18N50 N-channel MOSFET 500V
100 35

Vgs=5.5V
=6.0V 30
=6.5V
10 =7.0V
=8.0V 25 VGS=20V
ID,Drain Current [A]

=10.0V

RDS(ON) [Ω ]
20 VGS=10.0V
1
15

10
0.1
Notes
1. 250㎲ Pulse Test
5
2. TC=25℃

0.01
0.1 1 10 0 1 2 3 4 5 6 7 8 9

VDS,Drain-Source Voltage [V] ID,Drain Current [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage

1.8 1.2

※ Notes : ※ Notes :
Drain-Source Breakdown Voltage

1. VGS = 10 V 1. VGS = 0 V
1.6 2. ID = 5 A 2. ID = 250㎂
Drain-Source On-Resistance

1.1
BVDSS, (Normalized)
RDS(ON), (Normalized)

1.4

VGS=10V
1.2 1.0

VGS=4.5V

1.0
0.9

0.8

0.6 0.8
-50 -25 0 25 50 75 100 125 150 -50 0 50 100 150 200

o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Fig.3 On-Resistance Variation with Fig.4 Breakdown Voltage Variation vs.

Temperature Temperature

100

* Notes ; ※ Notes :
100 1. VGS = 0 V
1. VDS=30V
2. ID = 250㎂
Reverse Drain Current [A]
IDR
ID [A]

10
10

150℃
25℃

1
1 0.0 0.2 0.4 0.6 0.8 1.0 1.2
3 4 5 6 7 8 9 10
VSD, Source-Drain Voltage [V]
VGS [V]
Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature

Mar 2009. Version 0.0 3 MagnaChip Semiconductor Ltd.

 MDF18N50 N-channel MOSFET 500V
6000
Ciss = Cgs + Cgd (Cds = shorted)
10 ※ Note : ID = 11.5A
Coss Coss = Cds + Cgd
Crss = Cgd
5000
VGS, Gate-Source Voltage [V]

100V
8
250V

400V 4000 Ciss

Capacitance [pF]
6

3000

4
※ Notes ;
2000
1. VGS = 0 V
2. f = 1 MHz
2

1000

0 Crss
0
0 10 20 30 40 50 0.1 1 10

QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

2
10
20
Operation in This Area
is Limited by R DS(on)
10 µs 18
100 µs
1
1 ms 16
10
10 ms
ID, Drain Current [A]

14
ID, Drain Current [A]

100 ms
DC
12

0
10 10

6
-1
10
4
Single Pulse
TJ=Max rated
2
TC=25℃

10
-2 0
-1 0 1 2 25 50 75 100 125 150
10 10 10 10
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case
Temperature

10
1 12000

single Pulse
RthJC = 3.4℃/W
TC = 25℃
9000
D=0.5
Thermal Response

0
10
Power (W)

0.2
Zθ JC(t),

6000

0.1
-1
10
0.05
※ Notes : 3000
0.02 Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
0.01 RΘ JC=3.4℃/W
single pulse
-2
10 0
10
-5 -4
10
-3
10
-2
10 10
-1 0
10 10
1 1E-5 1E-4 1E-3 0.01 0.1 1
t1, Rectangular Pulse Duration [sec] Pulse Width (s)

Fig.11 Transient Thermal Response Curve Fig.12 Single Pulse Maximum Power
Dissipation

Mar 2009. Version 0.0 4 MagnaChip Semiconductor Ltd.

 MDF18N50 N-channel MOSFET 500V
Physical Dimension

3 Leads, TO-220F

Dimensions are in millimeters unless otherwise specified

Mar 2009. Version 0.0 5 MagnaChip Semiconductor Ltd.