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Power MOSFET
FEATURES
PRODUCT SUMMARY
• Low Gate Charge Qg Results in Simple Drive
VDS (V) 650
Requirement
RDS(on) (Ω) VGS = 10 V 2.0
RoHS
• Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT
Qg (Max.) (nC) 48 Ruggedness
Qgs (nC) 12 • Fully Characterized Capacitance and Avalanche Voltage
Qgd (nC) 19 and Current
Configuration Single • Compliant to RoHS directive 2002/95/EC
TO-251
D
N-Channel MOSFET
G D S
Top View
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TJ = 25 ° C
1 1
10 8.0
VGS ID = 3.2A
RDS(on) , Drain-to-Source On Resistance
TOP 15V
10V
I D , Drain-to-Source Current (A)
8.0V
7.0V
6.0V
5.5
5.5V
5.0V
BOTTOM 4.5V
5 5.0
(Normalized)
3.5
4.5V
1 2.0
0.5
20µs PULSE WIDTH
TJ = 150 ° C VGS = 10V
0.1 0.0
1 10 100 -60 -40 -20 0 20 40 60 80 100 120 140 160
VDS , Drain-to-Source Voltage (V) TJ , Junction Temperature ( °C)
Fig. 2 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature
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2000 10
V GS = 0V, f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
iss
C, Capacitance (pF)
5
1200
oss TJ = 150 ° C
800
1
400 TJ = 25 ° C
rss
V GS = 0 V
0 A 0.1
1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1.2
VDS , Drain-to-Source Voltage (V) VSD ,Source-to-Drain Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 10
ID = 3.2 A
OPERATION IN THIS AREA LIMITED
VDS = 520V BY RDS(on)
VGS , Gate-to-Source Voltage (V)
VDS = 325V
16 VDS = 130V 10us
ID , Drain Current (A)
5
12 100us
1ms
8
1
10ms
4
TC = 25 ° C
FOR TEST CIRCUIT TJ = 150 ° C
SEE FIGURE 13 Single Pulse
0 0.1
0 10 20 30 40 50 10 100 1000 10000
QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area
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RD
VDS
6.0
VGS
D.U.T.
5.0 RG
+
- VDD
ID , Drain Current (A)
4.0 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
3.0
Fig. 10a - Switching Time Test Circuit
2.0
VDS
90 %
1.0
0.0
25 50 75 100 125 150
TC , Case Temperature ( ° C) 10 %
VGS
t d(on) tr t d(off) t f
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
10
Thermal Response (Z thJC )
D = 0.50
1
0.20
0.10
PDM
0.05
0.1
t1
0.02
t2
0.01
Notes:
SINGLE PULSE
(THERMAL RESPONSE) 1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
t1 , Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
V DS
15 V tp
L Driver
VDS
RG D.U.T. +
- VDD
A
IAS A
20 V
tp 0.01 Ω I AS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
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800
ID
EAS , Single Pulse Avalanche Energy (mJ)
TOP 2.3A
3.3A QG
BOTTOM 4A
600
10 V
QGS Q GD
400 VG
Charge
200
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C) Current regulator
Same type as D.U.T.
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
50 kΩ
12 V 0.2 µF
0.3 µF
800
+
VDS
D.U.T. -
V DSav , Avalanche Voltage (V)
780 VGS
3 mA
760
IG ID
Current sampling resistors
720
700 A
0 1 2 3 4 5 6
I av , Avalanche Current (A)
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- +
-
RG • dV/dt controlled by R G +
• Driver same type as D.U.T. VDD
-
• ISD controlled by duty factor "D"
• D.U.T. - device under test
VGS = 10 V*
Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD
Re-applied
voltage Body diode forward drop
Inductor crurent
Ripple ≤ 5 % ISD
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TOĆ251AA
E A
L2
b2 c1 MILLIMETERS INCHES
Dim Min Max Min Max
A 2.21 2.38 0.087 0.094
A1 0.89 1.14 0.035 0.045
8
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