Professional Documents
Culture Documents
at: 10:30 AM, Wednesday, August 8th
2018 ARDC India
Red Track, Session 2
Highly Accelerated Life Testing
A Next Generation Testing Tool Towards
Quality & Reliability Assurance for Complex Electronics
Hardware Systems
Mustaq Basha1, B Sajidha Thabassum2, Anand
Dambal3 and KS Suryaprakash4
MUSTAQ BASHA, Sc ‘E’
Certified Reliability Engineer (ASQ)
LRDE,DRDO
Ministry of Defence (MOD)
CV Raman Nagar
Bangalore ‐93
mustaq.basha@lrde.drdo.com
PRESENTATION SLIDES
The following presentation was delivered at the:
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Although the ARDC may edit the presentation materials as needed to make them ready to print, the content of the
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Proceedings does not imply that the information and methods described in the presentation have been verified or
endorsed by the ARDC and/or its organizers.
Introduction to HALT/HASS
Design of test fixtures for HALT/HASS Test
Case Study– HALT of TRMs
Challenges faced during HALT
HASS Profile release for Production screening
Benefits of HALT/HASS
Test to verify conformance to
Stress to measure design
Specifications
margin
Repair field returns
Treat field failures as
Extended “Burn‐in” opportunities for process
Ship to specifications = OK improvement
HALT/HASA
• DESIGN
Specifically lack of design margin
• MANUFACTURING PROCESS
Variability of process, including your upstream
suppliers processes
Owned by engineering
HALT is not a test you pass or fail, it is a
process tool for the design engineers.
There are no pre‐established limits – the
product determines the limits.
Stress to failure.
For optimum results, monitor product during
stressing.
Absolutely NOT!
Corrosion 2%
Humidity 5%
Temperature 25%
Gradually increase
stress level until a
failure occurs
Analyze
the failure
Make
temporary
improvements
Mustaq Basha, LRDE, DRDO Red Track Session 2 Slide Number: 13
HALT, How It Works
Increase
stress and
start
process
over
Fundamental
Technological
Limit
Precipitation Screen
Detection Screen
Stress
Upper Operating
Limit Upper
Destructive
Upper Operating Margin Margin
Upper Specification
Limit HALT Vibration Stress
Upper Product
Specification
HALT Temp Stress
Proof of Screen
Product
(HASS) Product
Specification
Specification(DVT).
Lower product
Specification
SEQUENCE
• Cold
• Hot
• Rapid Thermal
• Vibration
• Combined
Environment
Mustaq Basha, LRDE, DRDO Red Track Session 2 Slide Number: 19
Thermal Stress
Note: Repetitive shock system used for HALT are equipped with multiple pneumatic actuators that
randomly strikes from the bottom of the semi rigid table, This system stimulates the product at
much wider range of frequencies than those used in DVT, simulating all 6DOF vibrations. This will
rapidly drive poor solder joint or weak mechanical connection to failure.
Mustaq Basha, LRDE, DRDO Red Track Session 2 Slide Number: 21
Vibration Step Stress
• After HALT is completed..
• Formal Test Report is prepared
• HALT data is used to plan HASS procedure
Sec 3
Mustaq Basha, LRDE, DRDO Red Track Session 2 Slide Number: 25
HALT Diagram
Precipitation Screen
Detection Screen
-50
-30
-10
10
30
50
70
90
0:00
0:20
0:40
1:00
1:20
1:40
2:00
2:20
2:40
3:00
3:20
3:40
4:00
4:20
Mustaq Basha, LRDE, DRDO
4:40
5:00
5:20
5:40
Temp Setpoint
6:00
6:20
6:40
7:00
7:20
7:40
8:00
8:20
8:40
9:00
Time
9:20
9:40
10:00
10:20
10:40
Red Track
11:00
PROOF OF SCREEN (POS)
11:20
11:40
12:00
12:20
HASS Development Product Life Valuation - 15 Runs
12:40
13:00
13:20
13:40
14:00
Session 2
14:20
Vib Setpoint
14:40
15:00
15:20
15:40
16:00
16:20
16:40
17:00
17:20
17:40
Slide Number: 29
A Typical Single HASS Profile
LPF
Radiating Elements
FPGA
65.8 mm
DC/Control
Signal
Connector
Core Chip HPF
Limiter
The Transmit/Receive Modules (T/R Modules) are the basic building blocks for Active Array Antennas
Four numbers of T/R Modules is housed in a single package called as the Quad-TRM or Q-TRM.
Q-TRM may be called QTRM-X (in X -Band) and integrated with 1:4 ways RF power combiners.
Equipment HASS on two
Design Units(II & III)
HALT Passed
Conduct LQT on Clear Sample III
Step Stress for integration
of the sample
Establish
UOL & UDL /
LOL & LDL Complete QT on
Sample II
Define
HASS Limits
Carry out 20 HASS cycles
Pass
Final Destructive HALT
Check for UOL & UDL/
LOL & LDL limits
Are limits Y
Finalize the HASS levels
same?
N Production Clearance
Redefine HASS levels Based on the new
limits HASS on each unit of production
Sample I
Sample II &III
Sample IV
Crack
Accelerometer
Define
HASS Limits
Mustaq Basha, LRDE, DRDO Red Track Session 2 Slide Number: 39
Proof of Screening (POS)
This process demonstrate that the chosen HASS screen
profile does not take out much life out of the equipment and
sufficient life is left in them to survive the normal lifetime of
field use. Also it shows that the chosen HASS screen is
effective in finding out the latent defects in the product.
HASS Cycle consist of Three Thermal cycles (Passive), fourth cycle electrically
energized and last cycle combined Temperature, vibration & electrically energized
(HASS=4 Hours & ESS=5 Days)
Achievements:
HASS replaced by ESS for production screening.
Total Qty- 8000 numbers of production QTRMs are 100% HASS screened for
projects like AESA, QRSAM, ADFCR(Atulya) Radars, resulting in accomplishing the
quality requirements without compromising the project time schedules.
Mustaq Basha, LRDE, DRDO Red Track Session 2 Slide Number: 41
Benefits of HALT/HASS
Quickly discover design & process flaws.
Evaluate & improve design margins.
Eliminate design & process problems before release to
manufacturing.
Quickly detect shifts in manufacturing processes.
Reduce production time and cost.
Decrease field service & warranty costs.
Reduce infant mortality rate at product introduction.
Reduces filed failures & Increases product reliability
BOTTOM LINE -
Higher profits and delighted customers
Typhoon 4.0
WORK SPACE UPPER TABLE POSITION
53.8”w x 54”d x 34.6”h (1366 x 1372 x 879mm)
LOWER TABLE POSITION
53.8”w x 54”d x 53.6”h (1366 x 1372 x 1362mm)
ANAND DAMBAL is heading Quality & Reliability Assurance Group of LRDE, currently
scientist 'G' and PD‐Active Phased Array Radars at Electronics Radar and Development
Establishment, DRDO, Bangalore. He has been with the Establishment as a researcher for
over 25 years in the R&D projects of radar systems. His area of interest includes radar
signal processing, radar system Design and Analysis.
KS Surya Prakash, Sc 'G' is Divisional Officer Radar Integration Testing Evaluation Division
(RITED) of LRDE. Received his BE degree in Mechanical from Karnataka University, Dharwad
and M. Tech in Machine Design from IIT Madras. Since 1983 he has been with Electronics &
Radar Development Establishment [LRDE]. He is involved in design and development of
Akash Radar Hardware, Airborne surveillance Platform (ASP), 3D Surveillance radars and
AESA Radar.
Version I :
100µF charge storage ceramic type capacitor was used and this component is not recommended for
airborne application got it replaced with tantalum type.
LDO(Low drop output voltage regulator) Part number 6806 become obsolence which is used to give 2V
supply to LNA got replaced by TI.
Version II:
Tantalum capacitor with TI LDO has overshoot in drain pulse of PA limit which was 8V but exceed up to
10.5V, it has cross the limit due to this some resistor, capacitors are change along with it N channel
MOSFET which is added to increase standby raise time to overcome over shoot issues.
Recovery time of LNA was coming to 1sec, for this problem of ON to OFF additional connection is
made from ground pad pin to the external ground i.e., heat sink (base of LNA) with this change recovery
has become <100µsec
.FPGA already has an oscillator for timing/clock etc., but an additional oscillator is added with TCXO is
added from RAKON device, this is standby mechanism to counter jitter issues arises in FPGA oscillator,
this all changes got implemented in Ver III.
Version III:
In rush current issue for short duration while switching ON 8V supply from external source, notice
module drawing up to 5A current against few milliamps, once it get stabilise it draws 300milliamps, to
address this issue MOSFET driver is replaced from MAXIM device to MICREL device. This replacement
of MOSFET drivers will wont allow PA to switch ON during transition period , once full 8V achieved then
only PA will be ON, with this modification version-IV was released.
Version IV: Was released with all the above changes and successfully qualified HALT/QTP test.
Coating Issues: Electroless nickel plating(conductive) plating was required were the nano-D connector get soldered to
the cover of the lid earlier the coating thickness was 20% used got to 10% and this added extra area for
bonding of lid cover.
Mustaq Basha, LRDE, DRDO Red Track Session 2 Slide Number: 50
Electroless Nickel Plating
Electroless nickel is a term used to describe plating of a
nickel-phosphorus coating onto a suitable substrate by
chemical reduction. Unlike electroplated coatings,
electroless nickel is applied without an externally
applied electric current. Instead, the coating is deposited
onto a part's surface by reducing nickel ions to metallic
nickel with sodium hypophosphite. This chemical
process avoids many of the problems associated with
most metallic coatings and provides deposits with many
unique characteristics. As applied, electroless nickel
coatings are uniform, hard, relatively brittle,
lubrious, easily solderable and highly corrosion
resistant. They can be precipitation hardened to very
high levels through the use of low temperature
treatments, producing wear resistance equal to that of
commercial hard chrome coatings. This combination
makes the coating well suited for many severe
applications and often allows it to be used in place of
more expensive or less readily available alloys.
76 mm
1:4 way
power
divider
Circulator
HPA
LPF
FPGA Radiating
Plank side Elements’
65.8 mm
side
DC/Control
Signal
Connector
Core Chip HPF
Limiter
Height = 5 mm
Note: The MTBF and Failure rate calculation as per MIL-HDBK-217FN2, for the X-Band Quad Transmit Receive
Module on Airborne Inhabited Fighter Aircraft(AIF) condition at +65°C by assuming continuous operation
with 100% duty cycle.
Operating
MTBF(Hrs)
Temperature
+65 38189
+30 57753
0 74779
-20 87099
-40 100794
60E+00 Data acquisition in Frequency Domain
40E+00
for frequency bandwidth of 10‐10KHz
20E+00
for 10Grms input stress on Channel‐1
Sensor on QTRM
Acceleration (g)
-20E+00
-40E+00
-60E+00
0 1 2 3 4 5 6 7
Time (s)
2
1 Start Stop
80E+00 Data acquisition in Frequency Domain for
60E+00
frequency bandwidth of 10‐10KHz for
40E+00
15Grms input stress on Channel‐1 Sensor
20E+00
on QTRM
Acceleration (g)
-20E+00
-40E+00
-60E+00
-80E+00
Start 1
2 Stop
Data acquisition in Frequency Domain
80E+00
60E+00
for frequency bandwidth of 10‐10KHz
40E+00
for 17.0 grms input stress on
20E+00
Channel‐1 Sensor on QTRM
Acceleration (g)
-20E+00
-40E+00
-60E+00
-80E+00