Design Considerations

for an LLC Resonant Converter

Hangseok Choi
Power Conversion Team

www.fairchildsemi.com
 1. Introduction
ƒ Growing demand for higher power
density and low profile in power
High frequency
converter has forced to increase operation
switching frequency
ƒ However, Switching Loss has been
an obstacle to high frequency
operation

Overlap of voltage and current Capacitive loss Reverse recovery loss

2
 1. Introduction

ƒ Resonant converter: processes power in a sinusoidal manner and

the switching devices are softly commutated
9 Voltage across the switch drops to zero before switch turns on (ZVS)
• Remove overlap area between V and I when turning on
• Capacitive loss is eliminated
ƒ Series resonant converter / Parallel resonant converter

3
 1. Introduction

Series Resonant (SR) converter

Q1 resonant network
Ip
Vin n:1
Vd +
Lr Ro
Q2 VO
Lm -
Ids2 Cr

ƒ The resonant inductor (Lr) and resonant capacitor (Cr) are in series
ƒ The resonant capacitor is in series with the load
9 The resonant tank and the load act as a voltage dividerÆ DC gain is always
lower than 1 (maximum gain happens at the resonant frequency)
9 The impedance of resonant tank can be changed by varying the frequency
of driving voltage (Vd)

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 1. Introduction

Series Resonant (SR) converter

ƒ Advantages
9 Reduced switching loss and EMI through ZVS Æ Improved
efficiency
9 Reduced magnetic components size by high frequency operation

ƒ Drawbacks
9 Can optimize performance at one operating point, but not with wide
range of input voltage and load variations
9 Can not regulate the output at no load condition
9 Pulsating rectifier current (capacitor output): limitation for high
output current application

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 1. Introduction

Parallel Resonant (PR) converter

Q1 resonant network
Ip
Vin n:1
Vd +
Llkp Ro
Q2 VO
Cr
-
Ids2

ƒ The resonant inductor (Lr) and resonant capacitor (Cr) are in series
ƒ The resonant capacitor is in parallel with the load
9 The impedance of resonant tank can be changed by varying the
frequency of driving voltage (Vd)

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 1. Introduction

Parallel Resonant (PR) converter

ƒ Advantages
9 No problem in output regulation at no load condition
9 Continuous rectifier current (inductor output): suitable for high
output current application

ƒ Drawbacks
9 The primary side current is almost independent of load condition:
significant current may circulate through the resonant network,
even at the no load condition
9 Circulating current increases as input voltage increases: limitation
for wide range of input voltage

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 1. Introduction

ƒ What is LLC resonant converter?

9 Topology looks almost same as the conventional LC series
resonant converter
9 Magnetizing inductance (Lm) of the transformer is relatively small
and involved in the resonance operation
9 Voltage gain is different from that of LC series resonant converter

LC Series resonant converter LLC resonant converter

Q1 resonant network Q1 resonant network

Ip Ip
Vin n:1 Vin Io
n:1 ID
Vd + Vd +
Lr Ro Ro
Lr
Q2 VO Q2 VO
Im
Lm - Lm -
Ids2 Cr Ids2 Cr

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 1. Introduction

ƒ Features of LLC resonant converter

- Reduced switching loss through ZVS: Improved efficiency
- Narrow frequency variation range over wide load range
- Zero voltage switching even at no load condition

- Typically, integrated transformer is used instead of discrete magnetic

components

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 1. Introduction

ƒ Integrated transformer in LLC resonant converter

9 Two magnetic components are implemented with a single core (use
the primary side leakage inductance as a resonant inductor)
9 One magnetic components (Lr) can be saved
9 Leakage inductance not only exists in the primary side but also in
the secondary side
9 Need to consider the leakage inductance in the secondary side

Q1 Integrated transformer
Q1

Vin Io Ip Io
n:1 ID Vin n:1 ID
Vd + Vd +
Ro Ro
Lr Llkp Llks
Q2 VO Q2 VO
Lm Im
- Lm -
Ids2 Cr Ids2 Cr

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 2. Operation principle and Fundamental Approximation

ƒ Square wave generator: produces a square wave voltage, Vd by driving switches,

Q1 and Q2 with alternating 50% duty cycle for each switch.
ƒ Resonant network: consists of Llkp, Llks, Lm and Cr. The current lags the voltage
applied to the resonant network which allows the MOSFET’s to be turned on
with zero voltage.
ƒ Rectifier network: produces DC voltage by rectifying AC current
Ip

Im
Square wave generator
Ids2
Q1 resonant network Rectifier network
Ip Io
Vin n:1 ID
Vd +
ID
Llkp Llks Ro
Q2 Im VO Vin
Vd
Lm - (Vds2)
Ids2 Cr
Vgs1

Vgs2

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 2. Operation principle and Fundamental Approximation

ƒ The resonant network filters the higher harmonic currents. Thus, essentially
only sinusoidal current is allowed to flow through the resonant network even
though a square wave voltage (Vd) is applied to the resonant network.
ƒ Fundamental approximation: assumes that only the fundamental component of
the square-wave voltage input to the resonant network contributes to the power
transfer to the output.
ƒ The square wave voltage can be replaced by its fundamental component

Isec Ip Isec
Ip
Vd Vd Resonant
Resonant
netw ork netw ork

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 2. Operation principle and Fundamental Approximation

ƒ Because the rectifier circuit in the secondary side acts as an impedance

transformer, the equivalent load resistance is different from actual load resistance.

ƒ The primary side circuit is replaced

pk
by a sinusoidal current source (Iac) I ac
and a square wave of voltage (VRI) Io
appears at the input to the rectifier.
ƒ The equivalent load resistance is Iac +
+
obtained as VRI VO
Ro
- -
F F
VRI VRI 8 Vo 8
Rac = = = = Ro
I ac F
I ac π Io π
2 2
π ⋅ Io
Iac I ac = sin( wt )
2
VRIF
Vo
4Vo
VRI VRI F = sin( wt )
π

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 2. Operation principle and Fundamental Approximation

ƒ AC equivalent circuit (L-L-L-C)

4n ⋅ Vo
sin(ωt )
Cr Llks VRO n ⋅ VRI
F
π
F
2n ⋅ Vo
Vd Llkp + M= F = = =
+ VO Vd Vd F 4 Vin
sin(ωt ) Vin
+
Vin π 2
Lm VRI
Ro
-
- ω 2 Lm Rac Cr
n:1 =
- ω2 ω2
jω ⋅ (1 − 2 ) ⋅ ( Lm + n Llks ) + Rac (1 − 2 )
2

ωo ωp
8n 2
Rac = Ro
π2
n2Llks 8n 2
Rac = Ro
π2
Cr Llkp 1 1
ωo = , ωp =
VdF Rac VROF Lr Cr L p Cr
Lm
Lp = Lm + Llkp , Lr = Llkp + Lm //(n 2 Llks )

- Lr is measured in primary side with secondary winding short circuited

- Lp is measured in primary side with secondary winding open circuited

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 2. Operation principle and Fundamental Approximation

ƒ Simplified AC equivalent circuit (L-L-C)

Cr Llkp Llks
Assuming Llkp=n2Llks
Vd +
Vin
+
+
VO ω2 k
( 2)
Lm VRI 2n ⋅ VO ωp k +1
M= =
- Ro Vin ω ω2 (k + 1) 2 ω2
- j ( ) ⋅ (1 − 2 ) ⋅ Q + (1 − 2 )
n:1
- ωo ωo 2k + 1 ωp
Lr = Llkp + Lm //(n Llks )
2

= Llkp + Lm // Llkp Lr / Cr Lm
Lp
Q= k=
L p = Llkp + Lm 1: Rac Llkp
L p − Lr

Cr Lr Expressing in terms of Lp and Lr

VinF Lp-Lr Rac VROF
ω 2 Lp − Lr
( 2)
2n ⋅ VO ωp Lp
M= =
Vin ω ω2 Lp ω2
- Lr is measured in primary side with secondary winding short circuited j ( ) ⋅ (1 − 2 ) ⋅ Q + (1 − 2 )
ωo ωo Lr ωp
- Lp is measured in primary side with secondary winding open circuited

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 2. Operation principle and Fundamental Approximation

ƒ Gain characteristics LLC resonant C onverter

fp fo
9 Two resonant frequencies (fo and fp) 2.0
exist Lr / Cr
Q=0.2 Q=
9 The gain is fixed at resonant frequency 1.8
Rac
(fo) regardless of the load variation Q= 1

1.6 Q = 0.8
Q = 0.6

k +1 Lp Q = 0.4
= =
1.4
M @ω =ωo
Lp − Lr

G ain
Q = 0.2
k
1.2

9 Peak gain frequency exists between fo Q=1

1.0
and fp
9 As Q decreases (as load decreases), k +1 Lp
0.8 M= =
the peak gain frequency moves to fp and k Lp − Lr
higher peak gain is obtained.
0.6
9 As Q increases (as load increases), 40 50 60 70 80 90 100 110 120 130 140

peak gain frequency moves to fo and the freq (kH z)

peak gain drops

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 2. Operation principle and Fundamental Approximation

ƒ Peak gain (attainable maximum gain) versus Q for different k values

2.4

2.2

2.0

k=1.5
Peak Gain

1.8
k=1.75
k=2
1.6

k=2.5

1.4 k=3

k=4
k=5
1.2
k=7
k=9
1
0.2 0.4 0.6 0.8 1 1.2 1.4

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 3. Design procedure

ƒ Design example
- Input voltage: 380Vdc (output of PFC stage)
- Output: 24V/5A (120W)
- Holdup time requirement: 17ms
- DC link capacitor of PFC output: 100uF

PFC DC/DC
Q1 ID

Ip
VDL Np:Ns
Vd VO
Llkp Llks + Ro
CDL Q2 Im
Lm -
Ids2 Cr

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 3. Design procedure

[STEP-1] Define the system specifications

9 Estimated efficiency (Eff)
9 Input voltage range: hold up time should be considered for minimum input voltage

2 PinTHU
Vin min = VO. PFC 2 −
CDL

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 3. Design procedure

[STEP-2] Determine the maximum and minimum voltage gains of the

resonant network by choosing k ( k = Lm / Llkp )
- it is typical to set k to be 5~10, which results in a gain of 1.1~1.2 at fo

VRO Lm + n 2 Llks Lm + Llkp k + 1

M min
= max = = =
Vin Lm Lm k Gain (M)
2 Peak gain (available maximum gain)

Vin max min 1.36 for Vinmin

M max
= min M Mmax
Vin

1.14
Mmin for Vinmax

k +1
M= = 1.14
k

fs
fo

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 3. Design procedure

[STEP-3] Determine the transformer turns ratio (n=Np/Ns)

Np Vin max
n= = ⋅ M min
N s 2 (Vo + VF )

[STEP-4] Calculate the equivalent load resistance (Rac)

8n 2 Vo 2
Rac = 2
π Po

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 3. Design procedure

[STEP-5] Design the resonant network

- With k chosen in STEP-2, read proper Q from gain curves

k = 7 , M max = 1.36
peak gain = 1.36 × 110% = 1.5

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 3. Design procedure

[STEP-6] Design the transformer

- Plot the gain curve and read the minimum switching frequency. Then, the minimum
number of turns for the transformer primary side is obtained as
n(Vo + VF )
N p min =
2 f s min ⋅ ΔB ⋅ Ae

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 3. Design procedure

[STEP-7] Transformer Construction

- Since LLC converter design results in relatively large Lr, usually sectional bobbin is typically
used
- # of turns and winding configuration are the major factors determining Lr
- Gap length of the core does not affect Lr much
- Lp can be easily controlled with gap length

Np=52T Ns1=Ns2=6T
Bifilar

Design value: Lr=234uH, Lp=998uH

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 3. Design procedure

[STEP-8] Select the resonant capacitor

π Io n(V + 2 ⋅ VF ) 2 Vin max 2 ⋅ I Cr RMS

I Cr RMS
≅ [ ] +[ o
2
] VCr max
≅ +
2 2n 4 2 f o Lm 2 2 ⋅ π ⋅ f o ⋅ Cr

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 4. Conclusion

ƒ Using a fundamental approximation, gain equation has

been derived

ƒ Leakage inductance in the secondary side is also

considered (L-L-L-C model) for gain equation

ƒ L-L-L-C equivalent circuit has been simplified as a

conventional L-L-C equivalent circuit

ƒ Practical design consideration has been presented

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 Appendix - FSFR-series

ƒ Variable frequency control with 50% duty cycle for half-bridge resonant
converter topology
ƒ High efficiency through zero voltage switching (ZVS)
ƒ Internal Super-FETs with Fast Recovery Type Body Diode (trr=120ns)
ƒ Fixed dead time (350ns)
ƒ Up to 300kHz operating frequency
ƒ Pulse skipping for Frequency limit (programmable) at light load condition
ƒ Simple remote ON/OFF control
ƒ Various Protection functions: Over Voltage Protection (OVP), Over Current
Protection (OCP), Abnormal Over Current Protection (AOCP), Internal Thermal
Shutdown (TSD)

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 Appendix - FSFR-series demo board

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 Appendix - FSFR-series demo board

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