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WMB 9 Color Hong
WMB 9 Color Hong
IMS’05 Workshop-WMB
100
N
u 80
m
b 60
e
r 40
20
0
1995 1996 1997 1998 1999 2000 2001 2002 2003 2004
Year
Y0 W1
WC s1
W1 W2
WL s2
W2
l2 l4 l6
l1 l3 l5 l7
Wn
C4
C2 sn
Wn Wn+1
L2 L4 sn+1
C6 Wn+1 Y0
Z0 L1 L3 L5 Z0
W1 W2 W3 Wn
l1 l2 l3 ln
0 1 2 3
q0 n-1 n n+1
qt
l1v l3v l5v
s1 s3 s5
W YA YA
s2 s4
s1,2 s2,3 sn-1,n
l2v l4v
~λ/4
~λ/4
~λ/4
~λ/4
Via hole
grounding
The choice of a
substrate depends on
9 Size
9 Higher-order modes
9 Surface wave effects
9 Implementations – couplings, line/spacing tolerances, …
9 Dielectric loss
9 Temperature stability
9 Power handling – dielectric strength (breakdown), thermal conductivity
Dr. Jia-Sheng Hong
Department of Electrical, Electronic and Computer Engineering
Heriot-Watt University, UK 7
J.Hong@hw.ac.uk
Design Considerations- Higher-order modes
9 Keep operating frequencies below the cutoff frequency of
the 1st higher-order mode, f c = c
ε r (2W + 0.8h )
90 90
W = 1.0 mm
εr = 10.8
80 εr = 3 80
Cutoff frequency fc (GHz)
20 10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Substrate thickness h (mm) Substrate thickness h (mm)
⎛ h ⎞ ⎛⎜ 377Ω ⎞⎟
Conductor loss Qc ∝ π ⎜ ⎟ ⋅ ⎜
⎝ λ ⎠ ⎝ Rs ⎟⎠
Dielectric loss Qd ∝
1
tan δ
Radiation loss
1 1 1 1
= + +
Qu Qc Qd Qr
Vo2
Pp ∝
2Z c
Vo is the maximum breakdown voltage of the substrate
Zc is the characteristic impedance of the microstrip
1 4 1 2 5 6
2 3 3 4
(a) ( b)
1 8
1 2 3 6 7 8
2 3 6 7
4 5
4 5
( c) ( d)
From: Jia-Sheng Hong and M.J.Lancaster, Microstrip Filters for RF/Microwave Applications,
John Wiley & Sons. Inc. New York, 2001
Dr. Jia-Sheng Hong
Department of Electrical, Electronic and Computer Engineering
Heriot-Watt University, UK 13
J.Hong@hw.ac.uk
Design Examples- Open-loop filters
¾Specifications:
Center frequency 985MHz
Fractional Bandwidth 10.359%
40dB-Rejection Bandwidth 125.5MHz
Passband Return loss −20dB
0 0
-5
Insertion/Return Loss (dB)
-20
-10
-25
-60
-30
-10
Magnitude (dB)
-20
-30
S21
S11
-40
-50
700 750 800 850 900 950 1000 1050 1100
Frequency (MHz)
On RT/Duroid substrate with a relative dielectric Measured response
constant of 10.8 and a thickness of 1.27mm
-10
Magnitude (dB)
-20
-30
S21
-40
S11
-50
-60
700 750 800 850 900 950 1000 1050 1100
On RT/Duroid substrate with a relative dielectric Frequency (MHz)
constant of 10.8 and a thickness of 1.27mm
Measured response
case 1
case 2
-20 case 3
-40
0
-60
-20
Insertion Loss (dB)
-80
-40
200 400 600 800 1000 1200
Frequency (MHz)
-60 Experimental results on extra
Measured wideband response transmission zeros, where case 1 to 4
indicate the increase of direct coupling
-80
between the two feed lines.
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
Frequency (GHz)
Magnetic
Coupling
Electric Aperture
Coupling
Aperture
Dielectric
Substrate
Common
Ground
Plane
Microstrip
Open-Loop
I/O Ports
Resonator
-20
-30
-40 Chebyshev
Elliptic
-50
Linear Phase
-60
850 900 950 1000 1050 1100
Frequency (MHz)
(a)
35
30 Qu=200
Frequency (MHz)
(b)
Transmission (dB)
Transmission (dB)
Transmission (dB)
-20 -20 -20
30 30 30
20 20 20
10 10 10
0 0 0
940 950 960 970 980 990 1000 940 950 960 970 980 990 1000 940 950 960 970 980 990 1000
V1 CL/2 CL/2 V2
Wa=1 mm, w1=2 mm,
w2 L1 w2=3 mm, d=16 mm
on RT/Duroid 6010
w1
L2
7 3.25
7 f0 3.25 f0
f1 6 f1 3.00
6 3.00
f1 / f0 f1 / f0
5 2.75
Frequency (GHz)
5 2.75
Frequency (GHz)
4 2.50
f1 / f0
4 2.50
f1 / f0
3 2.25
3 2.25
2 2.00
2 2.00
1 1.75
1 1.75
0 1.50
0 1.50
0 1 2 3 4 5 6 7 8 9 10 11
0 1 2 3 4 5 6
Open-stub length, L (mm)
Loading capacitance (pf)
37.75mm
-20 0.5mm
Transmission (dB)
-40
-60
Substrate: εr=10.8
h=1.27mm
-80
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Frequency (GHz)
C1 L1 L2 C2
(a) (b)
D ≈ λg 0 π D ≈ λg 0 4
D < λg 0 4
Mode 1 Mode 2
( c) (d) (e)
0
16 mm
-10
Amplitude (dB)
-20
dxd
Port 1 -30 S21
S11
-40
-50
1.3 1.4 1.5 1.6 1.7 1.8 1.9
20 mm
1 mm
Port 1
Port 2
1.5
1 0.5 0 0.5 1 0.5 0 0.5 1 1.5 2 2.5 3 3.5 4
a
E Ed
⎛ a a⎞
⎜ ,− ⎟
⎝2 3 2⎠
Equilateral triangular
microstrip patch resonator
a 2
L2 J2,3
J0,2
C2
-50
(a = 15 mm and b = 11.25 mm on a
3.0 3.5 4.0 4.5 5.0
1.27mm thick dielectric substrate with
a relative dielectric constant of 10.8)
Frequency (GHz)
-10
Magnitude (dB)
-20
w b -30 |S11| (Theory)
-40 |S21| (Theory)
-50 |S11| (Simulation)
-60 |S21| (Simulation)
a
-70
2.8 3.2 3.6 4.0 4.4 4.8
Frequency (GHz)
a = 15 mm and b = 14 mm
on a 1.27mm thick dielectric Frequency response
substrate with a relative
dielectric constant of 10.8
Magnitude (dB)
S11
-10
S21
l
-20
W
g -30
a -40
3.6 3.8 4.0 4.2 4.4
1
PORT PORT
1 2 The details to be presented in
another session (WE4C) at IMS2005
2
Ls
= J=1 L=Cs C=Ls
zin
Cs
zin l1 ≈λg/4 l2
s
zin
l3 ≈λg/2
PORT 1 PORT 2
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
Start: 1.880000 GHz Stop: 2.200000 GHz
Another 18-pole filter of this type with group delay equalisation will be
presented in TH1F session at IMS2005
Dr. Jia-Sheng Hong
Department of Electrical, Electronic and Computer Engineering
Heriot-Watt University, UK 37
J.Hong@hw.ac.uk
Design Examples- CQT filters
PORT 1 10 PORT 2
dB S11 S21 1 dB
0 0
-10 -5
-20 -10
-30 -15
-40 -20
-50 -25
-60 -30
-70 -35
1 S21
-80 1.974000 GHz -40
-0.7590 dB
-90 -45
-100 -50
Start: 1.960000 GHz Stop: 1.985000 GHz
y1 y2 yn-1 yn
Via hole 150
grounding
θc
Short-circuited stub
of electrical length θc On substrate: εr = 2.2, h = 1.57 mm
-10
Amplitude (dB)
-20
-30
|S21|
-40 S21
S11
-50
-60
0 1 2 3 4 5 6 7
Frequency (GHz)
fc (π/θc −1)fc f
EM simulated performance
From: Jia-Sheng Hong and M.J.Lancaster, Microstrip Filters for RF/Microwave Applications,
John Wiley & Sons. Inc. New York, 2001