CLASS TEST 1

B Tech. (EEE), Vth Semester Subject: Power Electronics

Duration: 1 hr Max. Marks: 25
Note: Q No.1 is compulsory. Attempt two more questions from the rest.
Q 1 (a) Give two domestic home applications where power semiconductor is used as a (2)
switch.
(b) In a particular application, a switch is need to operate at a high switching (2)
frequency of 50KHz. Which power semiconductor should be used for this
application? Give justification.
(c) A thyristor can safely carry 1000A current for 1ms. There are three different (2)
fuses available with I2t rating of 1000 A2-S, 10000 A2-S 100A2-S respectively.
Which fuse should be chosen for this thyristor?
(d) A component is shown in figure 1. How to use this component with a thyristor. (2)
Also specify its role or purpose.
(e) How to impart high voltage withstand capability to a diode? (Just specify two (2)
important factors)
Q2 Draw the following: (7.5)
(i) Static V-I characteristic of a Thyristor showing different modes of
operations (with complete labelling of axis).
(ii) Dynamic characteristics of thyristor showing different times
associated with it.
(iii) Symbol of: GTO, IGBT, n-channel enhancement MOSFET, TRIAC,
LASCR
Q3 A tungsten filament bulb is to be powered with a DC voltage source through a (7.5)
thyristor switch. The status of bulb should toggle. It should remain ON for 50
seconds and then become OFF for next 50 seconds. This cycle should repeat.
Design the power circuit and control circuit for this system (Just draw the
required circuit labelling all the components.).
Q4 Design the gate control circuitry for the power circuit shows in figure 2. Latching (7.5)
current of thyristor is 75mA. Gate Cathode characteristics of the thyristor is:
Eg=1+12 Ig where Eg is Gate to cathode Voltage and Ig is gate current. Peak gate
power dissipation is 3W. Average gate power dissipation is 0.5W. Pulses give by
microcontroller has high value of +15V and low value of 0V. (Determine pulse
frequency, ON time and R).