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UMW UMW SI2312A

■ Features SOT–23
● VDS (V) = 20V
● ID = 4.9 A (VGS =4.5V)
● RDS(ON) ＜ 33mΩ (VGS = 4.5V)
● RDS(ON) ＜ 40mΩ (VGS = 2.5V)

● RDS(ON) ＜ 51mΩ (VGS = 1.8V)

1. GATE
MARKING 2. SOURCE
3. DRAIN

G 1
A12T 3 D

S 2

■ Absolute Maximum Ratings Ta = 25℃

Parameter Symbol 5 sec Steady State Unit

Drain-Source Voltage VDS 20
V
Gate-Source Voltage VGS ±8
Ta=25℃ 4.9 3.77
Continuous Drain Current *1 ID
Ta=70℃ 3.9 3.0
A
Pulsed Drain Current *2 IDM 15
Avalanche Current *2 IAS 15
L=0.1mH
Single Avalanche Energy EAS 11.25 mJ
Ta=25℃ 1.25 0.75
Power Dissipation *1 PD W
Ta=70℃ 0.8 0.48
Thermal Resistance.Junction- to-Ambient *1 t≤5 sec 100
RthJA
Steady State 166 ℃/W
Thermal Resistance.Junction-to-Foot RthJF 50
Junction Temperature TJ 150
℃
Storage Temperature Range Tstg -55 to 150

*1 Surface Mounted on 1” x 1” FR4 Board.

*2 Pulse width limited by maximum junction temperature

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UMW UMW SI2312A

■ Electrical Characteristics Ta = 25℃

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 20 V
VDS=20V, VGS=0V 1
Zero Gate Voltage Drain Current IDSS μA
VDS=20V, VGS=0V, Ta=70℃ 75
Gate-Body Leakage Current IGSS VDS=0V, VGS=±8V ±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=250μA 0.45 0.65 0.85 V
On-State Drain Current *1 ID(on) VDS ≥ 10 V, VGS = 4.5 V 15 A
VGS=4.5V, ID=5.0A 27 33
Static Drain-Source On-Resistance *1 RDS(On) VGS=2.5V, ID=4.5A 33 40 mΩ
VGS=1.8V, ID=4.0A 42 51
Forward Transconductance *1 gFS VDS=15V, ID=5.0A 40 S
Total Gate Charge Qg 11.2 14
Gate Source Charge Qgs VGS=4.5V, VDS=10V, ID=5.0A 1.4 nC
Gate Drain Charge Qgd 2.2
Turn-On DelayTime td(on) 15 25
ID=1.0A, VDS=10V, ,V GEN=4.5V
Turn-On Rise Time tr 40 60
Turn-Off DelayTime td(off) 48 70 ns
RL=10Ω,RG=6Ω
Turn-Off Fall Time tf 31 45
Body Diode Reverse Recovery Time trr IF= 1.0A, dI/dt= 100A/μs 13 25
Maximum Body-Diode Continuous Current IS 1.0 A
Diode Forward Voltage VSD IS=1.0A,VGS=0V 0.8 1.2 V

*1 Pulse test: PW ≤ 300us duty cycle≤ 2%.

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UMW UMW SI2312A

■ Typical Characterisitics
Ou t p u t Ch ar ac t er i s t i c s Tr an s f er Ch ar ac t er i s t i c s
15 15

V GS = 4.5 thru 2.0 V

12 12
Drain Current (A)

Drain Current (A)

1.5 V
9 9

6 6

T C = 125 C
ID -

ID -
3 3
0.5 V 25 C
1.0 V -55 C
0 0
0 1 2 3 4 0.0 0.5 1.0 1.5 2.0

V DS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

0.15
1500

0.12
)

1200
C - Capacitance (pF)
r DS(on) - On-Resistance (

0.09 C iss
V GS = 1.8 V 900

0.06 V GS = 2.5 V
600

0.03
V GS = 4.5 V 300 C oss
C rss

0.00
0 3 6 9 12 15 0
0 4 8 12 16 20

ID - Drain Current (A) V DS - Drain-to-Source Voltage (V)

Gate Charge On-Resistance vs. Junction Temperature

8 1.6
V DS = 10 V V GS = 4.5 V
V GS - Gate-to-Source Voltage (V)

I D = 5.0 A I D = 5.0 A
r DS(on) - On-Resistance ( )

1.4
6
(Normalized)

1.2

1.0

2
0.8

0 0.6
0 4 8 12 16 20 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature ( C)

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UMW UMW SI2312A

■ Typical Characterisitics

S o u rc e -D ra in D io d e F o rw a rd V olta g e O n -R e s is ta n c e v s . G a te -to -S o u rc e V olta g e

20 0.20

10
I D = 5.0 A

)
T J = 150 C 0.15
I S - Source Current (A)

r DS(on) - On-Resistance (
1

0.10

T J = 25 C
0.1
0.05

0.01 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Threshold Voltage Single Pulse Power

0.2 12

0.1 10

I D = 250 A
V GS(th) Variance (V)

-0.0 8
Power (W)

T A = 25 C
-0.1 6

-0.2 4

-0.3 2

.
-0.4 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
T J - Temperature ( C) Time (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2
Notes:
0.1
0.1 P DM
0.05
t1
0.02 t2
t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA= 166 C/W
3. TJM - TA = P DM Z thJA(t)
Single Pulse 4. Surface Mounted
0.01
10 - 4 10 - 3 10 - 2 10 - 1 1 10 100 600
Square Wave Pulse Duration (sec)

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