TIP41, TIP41A, TIP41B,

TIP41C (NPN); TIP42, TIP42A,

TIP42B, TIP42C (PNP)

Complementary Silicon
Plastic Power Transistors
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Designed for use in general purpose amplifier and switching
applications.
6 AMPERE
Features COMPLEMENTARY SILICON
• ESD Ratings: Machine Model, C; > 400 V POWER TRANSISTORS
Human Body Model, 3B; > 8000 V
40−60−80−100 VOLTS,
• Epoxy Meets UL 94 V−0 @ 0.125 in
65 WATTS
• Pb−Free Packages are Available*

MAXIMUM RATINGS MARKING

Rating Symbol Value Unit
DIAGRAM

Collector−Emitter Voltage TIP41, TIP42 VCEO 40 Vdc 4

TIP41A, TIP42A 60
TIP41B, TIP42B 80
TIP41C, TIP42C 100
Collector−Base Voltage TIP41, TIP42 VCB 40 Vdc TO−220AB
CASE 221A TIP4xxG
TIP41A, TIP42A 60
TIP41B, TIP42B 80 STYLE 1 AYWW
TIP41C, TIP42C 100 1
2
3
Emitter−Base Voltage VEB 5.0 Vdc
Collector Current− Continuous IC 6.0 Adc
Peak 10
TIP4xx = Device Code
Base Current IB 2.0 Adc xx = 1, 1A, 1B, 1C
Total Power Dissipation @ TC = 25°C PD 65 W 2, 2A, 2B, 2C
Derate above 25°C 0.52 W/°C A = Assembly Location
Y = Year
Total Power Dissipation @ TA = 25°C PD 2.0 W WW = Work Week
Derate above 25°C 0.016 W/°C G = Pb−Free Package
Unclamped Inductive Load Energy E 62.5 mJ
(Note 1)
Operating and Storage Junction, TJ, Tstg – 65 to °C ORDERING INFORMATION
Temperature Range +150 See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 1.67 °C/W
Thermal Resistance, Junction−to−Ambient RqJA 57 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W.

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2005 1 Publication Order Number:

September, 2005 − Rev. 6 TIP41A/D
 TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2) TIP41, TIP42 VCEO(sus) 40 − Vdc
(IC = 30 mAdc, IB = 0) TIP41A, TIP42A 60 −
TIP41B, TIP42B 80 −
TIP41C, TIP42C 100 −
Collector Cutoff Current ICEO mAdc
(VCE = 30 Vdc, IB = 0) TIP41, TIP41A, TIP42, TIP42A − 0.7
(VCE = 60 Vdc, IB = 0) TIP41B, TIP41C, TIP42B, TIP42C − 0.7
Collector Cutoff Current ICES mAdc
(VCE = 40 Vdc, VEB = 0) TIP41, TIP42 − 400
(VCE = 60 Vdc, VEB = 0) TIP41A, TIP42A − 400
(VCE = 80 Vdc, VEB = 0) TIP41B, TIP42B − 400
(VCE = 100 Vdc, VEB = 0) TIP41C, TIP42C − 400
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 1.0 mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc) hFE 30 − −
DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) 15 75
Collector−Emitter Saturation Voltage (IC = 6.0 Adc, IB = 600 mAdc) VCE(sat) − 1.5 Vdc
Base−Emitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc) VBE(on) − 2.0 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain — Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 − MHz
Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 − −
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

ORDERING INFORMATION
Device Package Shipping
TIP41 TO−220 50 Units / Rail
TIP41G TO−220 50 Units / Rail
(Pb−Free)
TIP41A TO−220 50 Units / Rail
TIP41AG TO−220 50 Units / Rail
(Pb−Free)
TIP41B TO−220 50 Units / Rail
TIP41BG TO−220 50 Units / Rail
(Pb−Free)
TIP41C TO−220 50 Units / Rail
TIP41CG TO−220 50 Units / Rail
(Pb−Free)
TIP42 TO−220 50 Units / Rail
TIP42G TO−220 50 Units / Rail
(Pb−Free)
TIP42A TO−220 50 Units / Rail
TIP42AG TO−220 50 Units / Rail
(Pb−Free)
TIP42B TO−220 50 Units / Rail
TIP42BG TO−220 50 Units / Rail
(Pb−Free)
TIP42C TO−220 50 Units / Rail
TIP42CG TO−220 50 Units / Rail
(Pb−Free)

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 TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)

TA TC
4.0 80

PD, POWER DISSIPATION (WATTS)

3.0 60

TC
2.0 40

TA
1.0 20

0 0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)

Figure 1. Power Derating

VCC
2.0
+30 V

1.0 TJ = 25°C
25 ms RC VCC = 30 V
0.7
+11 V SCOPE IC/IB = 10
0.5
RB
t, TIME (s)

0 0.3
μ

tr
−9.0 V 0.2
D1
tr, tf ≤ 10 ns 0.1
DUTY CYCLE = 1.0% −4 V 0.07 td @ VBE(off) ≈ 5.0 V
0.05
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
0.03
D1 MUST BE FAST RECOVERY TYPE, e.g.: 0.02
1N5825 USED ABOVE IB ≈ 100 mA 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0
MSD6100 USED BELOW IB ≈ 100 mA IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Time Test Circuit Figure 3. Turn−On Time

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 TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0

0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1 P(pk)
ZqJC(t) = r(t) RqJC
0.07 0.05
RqJC = 1.92°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02 PULSE TRAIN SHOWN
0.03 t1
READ TIME AT t1 t2
0.02 0.01 TJ(pk) − TC = P(pk) ZqJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 1.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)

Figure 4. Thermal Response

10 There are two limitations on the power handling ability of

0.5ms a transistor: average junction temperature and second
IC, COLLECTOR CURRENT (AMP)

5.0
breakdown. Safe operating area curves indicate IC − VCE
1.0ms limits of the transistor that must be observed for reliable
3.0 TJ = 150°C
2.0 CURVES APPLY BELOW RATED VCEO operation; i.e., the transistor must not be subjected to greater
SECONDARY BREAKDOWN LTD 5.0ms
dissipation than the curves indicate.
1.0 BONDING WIRE LTD The data of Figure 5 is based on T J(pk) = 150_C; TC is
THERMAL LIMITATION @ TC = 25°C variable depending on conditions. Second breakdown pulse
0.5 (SINGLE PULSE) limits are valid for duty cycles to 10% provided T J(pk)
0.3 TIP41, TIP42 v 150_C. T J(pk) may be calculated from the data in
0.2 TIP41A, TIP42A Figure 4. At high case temperatures, thermal limitations will
TIP41B, TIP42B
TIP41C, TIP42C reduce the power that can be handled to values less than the
0.1 limitations imposed by second breakdown.
5.0 10 20 40 60 80 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 5. Active−Region Safe Operating Area

5.0 300

3.0 TJ = 25°C TJ = 25°C

2.0 VCC = 30 V 200
IC/IB = 10
C, CAPACITANCE (pF)

ts
1.0 IB1 = IB2
Cib
t, TIME (s)

0.7
μ

0.5 100

0.3 70
0.2 tf Cob

50
0.1
0.07
0.05 30
0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IC, COLLECTOR CURRENT (AMP) VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Turn−Off Time Figure 7. Capacitance

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 TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)

VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)

500 2.0

300 VCE = 2.0 V TJ = 25°C

200 TJ = 150°C 1.6
hFE , DC CURRENT GAIN

100
25°C 1.2 IC = 1.0 A 2.5 A 5.0 A
70
50

30 0.8
20 −55 °C

0.4
10
7.0
5.0 0
0.06 0.1 0.2 0.3 0.4 0.6 1.0 2.0 4.0 6.0 10 20 30 50 100 200 300 500 1000
IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (mA)

Figure 8. DC Current Gain Figure 9. Collector Saturation Region

2.0 +2.5

θV, TEMPERATURE COEFFICIENTS (mV/°C)

TJ = 25°C +2.0 *APPLIES FOR IC/IB ≤ hFE/4
1.6 +1.5
V, VOLTAGE (VOLTS)

+1.0
1.2 +0.5 +25 °C to +150°C
* qVC FOR VCE(sat)
0
VBE(sat) @ IC/IB = 10 −55 °C to +25°C
0.8 −0.5
+25 °C to +150°C
VBE @ VCE = 4.0 V −1.0
0.4 −1.5 qVB FOR VBE
VCE(sat) @ IC/IB = 10 −2.0 −55 °C to +25°C
0 −2.5
0.06 0.1 0.2 0.3 0.4 0.6 1.0 2.0 3.0 4.0 6.0 0.06 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 6.0
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 10. “On” Voltages Figure 11. Temperature Coefficients

R BE , EXTERNAL BASE−EMITTER RESISTANCE (OHMS)

103 10M
VCE = 30 V VCE = 30 V
102
IC, COLLECTOR CURRENT (A)

1.0M IC = 10 x ICES
μ

TJ = 150°C
101 100°C IC ≈ ICES
25°C 100k
100

10k
10−1 IC = ICES IC = 2 x ICES

10−2 REVERSE FORWARD 1.0k (TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)
10−3 0.1k
−0.3 −0.2 −0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 +0.7 20 40 60 80 100 120 140 160
VBE, BASE−EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)

Figure 12. Collector Cut−Off Region Figure 13. Effects of Base−Emitter Resistance

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 TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)

PACKAGE DIMENSIONS

TO−220
CASE 221A−09
ISSUE AA

NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
−T− PLANE
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
Q A
A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V Q 0.100 0.120 2.54 3.04
J R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
N V 0.045 −−− 1.15 −−−
Z −−− 0.080 −−− 2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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