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IEEE INTERNATIONAL CONFERENCE ON ADVANCES IN E LECTRICAL T ECHNOLOGY F OR GREEN E NERGY 2017 (ICAETGT’ 2 K 17)

Single Bit Hybrid Full Adder Cell by Gate


Diffusion Input and Pass Transistor Logic
Technique
Rishab Goyal Sanjeev Sharma
Pursuing M.Tech ECE From Assistant Professor
Lovely Professional University Lovely Professional University
Phagwara, India Phagwara, India
Goyalris09@gmail.com Sanjeev.15978@lpu.co.in

Abstract—In this paper, single bit full adder hybrid reduce the power and delay. But we also have to consider
circuit has been proposed which consist of two the size of the circuit side by side because in era of
techniques i.e. Pass transistor Logic (PTL) and Gate miniaturization, size plays a very significant role in it. If
Diffusion Technique (GDI). Several logic families are we trying to reduce the propagation delay, the power
described by PTL which is utilized in the architecture of consumption will increase which will further cost high
integrated circuits. PTL technique is used to decreases heat dissipation in the circuit so we have tried to optimize
the number of transistors in the circuits to make the circuit in order to achieve low power with almost
different gates of logic by eradicating redundant similar delay values. So in our proposed design we have
transistors. GDI technique is utilized for the low power tried to achieve the following three objectives which are
consumption. In this paper CADENCE VIRTUOSO tool as given below:-
is being used and all the simulation work is done on it by
utilizing the technology node at 180nm along with a 1. Low Power Dissipation
supply voltage of 1.8V. The simulation result represents 2. Minimum Propagation Delay
that the proposed architecture of single bit hybrid full 3. Small Circuit size
adder cell absorbs 53% less power in comparison with
hybrid full adder [5], 5% less power in comparison with As we know that the immunity of noise and performance
3T XNOR [6], 58% less power in comparison with 8T in a circuit both possess behavior of conflicting. Static
full adder cell [6] and 86% less power in comparison complementary metal-oxide semiconductor (CMOS) [1],
with Adder using MDCVSL [8]. As we know that power dynamic CMOS logic [2], complementary pass transistor
and propagation delay both are varying inversely but logic (CPL) [3] and transmission gate adder [4] are the
still the propagation delay is not affected much and it is logic architecture which is generally utilized in the
almost similar than the existing designs. conventional domain. If we want to develop the reliability
in the circuit then we have to waive the performance in
Keywords—Gate Diffusion Input;Pass Transistor Logic; the circuit. So other techniques are also utilized for the
Hybrid Logic; Average Power Dissipation low power absorption and increasing the speed in the
circuit [7]. In the PTL, we can decrease the switching
I.INTRODUCTION activity in the circuit by eradicating the glitches. It can
only be done by controlling the lengths and the widths of
In today’s era there are two major design issues which we each pass transistor. In the PTL, the switching capacitance
as a VLSI design engineers are facing i.e. Power of node is less when compared it to the CMOS deigns due
Dissipation and Delay. We can design our circuit by using to the less size of the transistors while implementing.
various technologies and techniques but there are some While designing of PTL, there is no static leakage.
constraints associated with every design technologies
which cannot be neglected. In the applications such as There are some important advantages in the Pass
microprocessor, digital signal processing and image Transistor Logic which are 1) Speed is high 2) Power
processing the operations which are commonly used i.e. dissipation is low 3) interconnection effect is low [8, 9].
Subtraction, Addition, AND and OR. In the Pass Transistor Logic, due to the small node
capacitance the speed is high, due to the less number of
In Digital Signal Processing application, the perspective transistors the power dissipation is low and due to the
of throughput, latency and delay are the major aspects for small area the interconnection effect is low. In Pass
the performance of addition. Most of the adder circuits Transistor Logic, there are some disadvantages i.e. across
not only increases the delay but also dissipates the huge the single channel of pass transistor there is a threshold
amount of power. So in the circuit our main focus is to loss and at the regenerative inverter the high voltage level

978-1-5386-2138-7/17/$31.00 ©2017 IEEE 37

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IEEE INTERNATIONAL CONFERENCE ON ADVANCES IN E LECTRICAL T ECHNOLOGY F OR GREEN E NERGY 2017 (ICAETGT’ 2 K 17)

is not Vdd. There are also some advantages in the Gate Another design technique is described by B.Sathyabhama
Diffusion Input which are 1) Circuit Design power is less, et al [6] i.e. 3T XNOR Circuit. The 3T XNOR Circuit is
2) Propagation Delay is reduce, 3) Digital Circuit area is the basic building block in various blocks especially
reduce, 4) Complexity of the Circuit is low maintained. Multipliers, Arithmetic Circuit, Comparator, Compressor,
Code Converters, Parity Checkers, DSP Architecture,
In the digital combinational circuit, GDI technique is Phase Detector and microprocessor [10]. The 3T XNOR
utilize for the low power consumption. It is very Circuit is described by using the concept of hybrid CMOS
adjustable for digital circuits. In the Complementary full adder with 8T. It consists of 3 transistors. The Fig. 2
Metal Oxide Semiconductor and the Gate Diffusion represents the schematic of 3T XNOR circuit as shown
Technique, the prime difference is that in the Gate below:-
Diffusion Input Technique the Voltage drain-to drain
source is not attached with the PMOS as well as the
Ground is not attached to the NMOS which makes the
Gate Diffusion Input circuit flexible. There are the some
advantages of GDI technique over CMOS are 1) Power
Circuit Design is less, 2) Propagation Delay is reduced, 3)
Power Consumption is reduced, 4) Area of Digital Circuit
is reduced, 5) Low Complexity of logic design is
maintained. To decrease the number of transistors in a
circuit as well as the low power absorption, many
techniques have been suggested like Hybrid Circuit of
Full adder [5], 3T XNOR Circuit [6], 8T Full Adder
Circuit [6] as well as the MDCVSL [8] which is described
below. Fig. 2. 3T XNOR Circuit

II.EXISTING SYSTEM Using the PTL, 3T XNOR circuit is designed. In the 3T


XNOR circuit, when AB = 00, this make the NMOS
In last few decades there is significant development in the transistor turn OFF and across the transistor PMOS VDD
scenario of design. The hybrid full adder circuit as develops. When AB= 10 or 01, it turns ON the NMOS
described by Kshitij Shant, et al [5] is the combination of transistor and to the output, it passes “0” for both the
both PTL as well as the GDI Technique and it consists of cases. When AB= 11, it turns ON the NMOS transistor
only 10 transistors as shown in Fig. 1. and both the transistors PMOS as well NMOS is
generated at the output. In this case, weak “1” is generated
by NMOS and strong “1” is generated by PMOS through
which we get strong ‘0’ at the output.

For Low power consumption another technique is as


described by M.Deepika et al [6] i.e. 8T Full Adder.
Circuit for 8T full adder is represented in the Fig.3.The
Boolean expressions of sum and carry for full adder are:

Sum = ((A+B)"+C)' (1)

Carry = (A.B) + [(A+B)'.C] (2)

Fig. 1. Single bit Hybrid Circuit of Full Adder

While designing both the techniques i.e. Pass Transistor


Logic (PTL) and the Gate Diffusion Input (GDI) the
common problem which we face is the low swing output
because Vdc is not included in both the techniques. On
increasing the supply voltage of input, the characteristics
of hybrid adder also changes. Due to the deficiency of
voltage source (Vdc), the GDI and PTL do not produce
the output of full swing.

Fig. 3. 8T Full Adder Circuit

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Another design technique is as described by Amit Dubey, In the GDI XOR Gate, when AB=00, there is a loss in
et al [8] for the low power consumption in the circuit i.e. threshold at the output of the first XOR Gate. Thus the
MDCVSL. It gives better output in terms of propagation SUM value is not stable being of assertive power
delay, absorption of power, operating frequency, and load consumption as well as the contention between the
capacitance of output as well as on temperature by adding NMOS and PMOS. When AB are less in logic, this turn
two weak P-channel devices. The fig. of MDCVSL is ON the added NMOS transistor and helps to discharge the
shown below:- node voltage to 0.

Fig. 5. Hybrid 1 bit Full Adder Module

As we know that in the PTL XOR Gate, only PTL


Fig. 4. Adder Circuit using MDCVSL network (either PMOS or NMOS) is ample to execute the
logic operation. It gives good output levels and the
In the MDCVSL, the connection of six NMOS and the driving capability of the circuit is also increased as it
four PMOS is done and single addition of supply is utilized static CMOS inverter. The main goal of the
utilized on the circuit for switching. VPULSE is circuit is to reduce the unnecessary power consumption
connected on every input port out of six inputs on which due to the existence of the static CMOS inverter.
we find out the fall time, rise time, voltages V1 and V2,
time period and width of pulse and Z and Zb is connected When AB=00, the PMOS transistor is ON and NMOS
at the two output port and at the ground port GND is transistor is OFF and when AB=01, the PMOS transistor
connected in the circuit. In terms of threshold loss, is weak “0” and it pass insufficient logic less signal to the
MDCVSL gives the better output waveform due to the output. In the above two cases we observed that value of
transmission gate topology in the architecture. In the logic A is constant while the value of logic B changes
MDCVSL, the two logic trees are efficient of processing from 0 to 1.When AB=10, the PMOS transistor is OFF
complex functions in a single delay circuit. and NMOS transistor is ON as well as strong 0, it will
pass the full logic less signal to the output and when
III.PRINCIPLE OF OPERATION AB=11, the PMOS transistor is OFF and NMOS transistor
is ON and due to NMOS transistor is weak, the output
A. Approach of the Design Model will be charged due to insufficient high logic.
In the proposed architecture single bit hybrid full adder
cell is designed and basic approach is to make circuit In the GDI OR Gate, the input is the output of the PTL
which works on less power along with high speed. The AND Gate which gives the Carry expression in the full
proposed architecture of single bit hybrid full adder cell is adder. In terms of low power absorption and high voltage
combination of two design techniques i.e. PTL and GDI of input, the GDI OR Gate gives the improved
Technique. The design basically consists of four sub- performance.
modules as shown in Fig.5.
B. Proposed Architecture
1. GDI XOR Gate To reduce the power absorption, propagation delay,
2. PTL XOR Gate number of transistors and to develop the flexibility in the
3. PTL AND Gate circuit, GDI and PTL technique is used. The proposed
4. GDI OR Gate single bit hybrid full adder is implemented by utilizing the
concept of PTL “AND” and “XOR” Gate and Gate
Diffusion Input “XOR” and “OR” which is shown in
Fig.6 and in Fig.7.

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IEEE INTERNATIONAL CONFERENCE ON ADVANCES IN E LECTRICAL T ECHNOLOGY F OR GREEN E NERGY 2017 (ICAETGT’ 2 K 17)

Fig. 6. Proposed Hybrid Full Adder

The output waveform of hybrid full adder cell is On increasing the input voltage supply in the circuit we
mentioned. The typical complication in PTL and GDI noticed that the characteristics of the hybrid adder also
technique is that the swing output is less. In terms of changes and the GDI and the PTL do not produce output
propagation delay as well as the low power consumption, full swing. In the architecture of single bit hybrid full
we have come across that the efficiency of the hybrid full adder cell when width of PMOS=900nm and width of
adder circuit lies between the Gate Diffusion Input (GDI) NMOS=600nm at supply voltage 1.8V, the power
and the Pass Transistor Logic (PTL). consumption is 282.84uW.

Fig. 7. Output waveform of Proposed Hybrid Adder Cell

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IV.SIMULATION RESULT Circuit design Supply Voltage Delay


Modified Hybrid 1.8 1850ps
The simulation is done by CADENCE VIRTUOSO tool. Full Adder
The technology used is CMOS process 180nm
technology.

C. Power Output
The consumption of power between the existing and the
modified circuit is compared and is represented in Table 1
and the hybrid full adder is compared with the width of
1um.

Table I. Comparison of Power Consumption for various


Circuits
Circuit design Supply Power
Voltage Consumption
Hybrid full Adder 1.5V 887.9uW Fig. 9. Graph between Delay vs Supply Voltage at 180 nm
3T XNOR Gate 1.8V 9130uW Technology
8T Full Adder 1.8V 805uW
V.CONCLUSION AND FUTURE SCOPE
Adder using 1.8V ~550uW
MDCVSL
In the paper, different architecture of full adder along with
Modified Hybrid 1.8V 473.982uW
Full Adder different techniques has been implemented. A new circuit
of hybrid has been proposed by the combination of PTL
and GDI is utilized. The proposed single bit hybrid full
adder circuit contains the advantages of both the
techniques. Due to Gate Diffusion Input (GDI) the circuit
process quick while due to Pass Transistor Logic (PTL)
the circuit consumes minimum power and it comes down
with the massive merit in terms of delay product and the
power consumption.

Being utilizing the transistor the hybrid adder is utilized in


performing Multiplier, Subtractor, Compressor as well as
the sequential circuits.

ACKNOWLEDGEMENT
Fig. 8. Graph between Power vs Supply Voltage at 180nm Authors would like to thank all the researchers who have
Technology contributed in this field of research. The comments of
anonymous reviewers to improve the quality of this paper
D. Delay Output are also acknowledged.
In this category we considered the effect on delay of the
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IEEE INTERNATIONAL CONFERENCE ON ADVANCES IN E LECTRICAL T ECHNOLOGY F OR GREEN E NERGY 2017 (ICAETGT’ 2 K 17)

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