SIEGET
25 BFP420

NPN Silicon RF Transistor

3

For high gain low noise amplifiers
4

For oscillators up to 10 GHz

Noise figure F = 1.1 dB at 1.8 GHz
outstanding G ms = 21 dB at 1.8 GHz

Transition frequency f T = 25 GHz 2

Gold metallization for high reliability 1 VPS05605

SIEGET  25 GHz f T - Line

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type Marking Pin Configuration Package

BFP420 AMs 1=B 2=E 3=C 4=E SOT343

Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 4.5 V
Collector-base voltage VCBO 15
Emitter-base voltage VEBO 1.5
Collector current IC 35 mA
Base current IB 3
Total power dissipation Ptot 160 mW
TS
107°C 1)
Junction temperature Tj 150 °C
Ambient temperature TA -65 ... 150
Storage temperature Tstg -65 ... 150

Thermal Resistance
Junction - soldering point 2) RthJS
260 K/W

1T is measured on the emitter lead at the soldering point to the pcb

S
2For calculation of R please refer to Application Note Thermal Resistance
thJA

1 Aug-20-2001
 SIEGET
25 BFP420

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage V(BR)CEO 4.5 5 - V
IC = 1 mA, IB = 0
Collector-base cutoff current ICBO - - 200 nA
VCB = 5 V, IE = 0
Emitter-base cutoff current IEBO - - 35 µA
VEB = 1.5 V, IC = 0
DC current gain hFE 50 100 150 -
IC = 20 mA, VCE = 4 V
AC characteristics (verified by random sampling)
Transition frequency fT 18 25 - GHz
IC = 30 mA, VCE = 3 V, f = 2 GHz
Collector-base capacitance Ccb - 0.15 0.3 pF
VCB = 2 V, f = 1 MHz
Collector-emitter capacitance Cce - 0.37 -
VCE = 2 V, f = 1 MHz
Emitter-base capacitance Ceb - 0.55 -
VEB = 0.5 V, f = 1 MHz
Noise figure F - 1.1 - dB
IC = 5 mA, VCE = 2 V, ZS = ZSopt ,
f = 1.8 GHz
Power gain, maximum stable 1) Gms - 21 -
IC = 20 mA, VCE = 2 V, ZS = ZSopt , ZL = ZLopt ,
f = 1.8 GHz
Insertion power gain |S21|2 14 17 -
IC = 20 mA, VCE = 2 V, f = 1.8 GHz,
ZS = ZL = 50

Third order intercept point IP3 - 22 - dBm
IC = 20 mA, VCE = 2 V, ZS=ZSopt , ZL =ZLopt ,
f = 1.8 GHz
1dB Compression point P-1dB - 12 -
IC = 20 mA, VCE = 2 V, f = 1.8 GHz,
ZS=ZSopt , ZL =ZLopt

1G = |S21 / S12 |
ms

2 Aug-20-2001
 SIEGET
25 BFP420

SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :

Transistor Chip Data
IS = 0.20045 fA BF = 72.534 - NF = 1.2432 -
VAF = 28.383 V IKF = 0.48731 A ISE = 19.049 fA
NE = 2.0518 - BR = 7.8287 - NR = 1.3325 -
VAR = 19.705 V IKR = 0.69141 A ISC = 0.019237 fA
NC = 1.1724 - RB = 8.5757
IRB = 0.72983 mA
RBM = 3.4849
RE = 0.31111 RC = 0.10105

CJE = 1.8063 fF VJE = 0.8051 V MJE = 0.46576 -
TF = 6.7661 ps XTF = 0.42199 - VTF = 0.23794 V
ITF = 1 mA PTF = 0 deg CJC = 234.53 fF
VJC = 0.81969 V MJC = 0.30232 - XCJC = 0.3 -
TR = 2.3249 ns CJS = 0 F VJS = 0.75 V
MJS = 0 - XTB = 0 - EG = 1.11 eV
XTI = 3 - FC = 0.73234 - TNOM 300 K
C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) :
IS = 3.5 fA N= 1.02 - RS = 10

All parameters are ready to use, no scaling is necessary

Package Equivalent Circuit:

C CB L BI = 0.47 nH
L BO = 0.53 nH
L BO L BI L CI L CO L EI = 0.23 nH
B’ Transistor C’
B C
Chip L EO = 0.05 nH
C’-E’-
E’ Diode L CI = 0.56 nH
C BE C CE
L CO = 0.58 nH
L EI
CBE = 136 fF
CCB = 6.9 fF
L EO
CCE = 134 fF
E EHA07389
Valid up to 6GHz
The SOT-343 package has two emitter leads. To avoid high complexity of the package equivalent circuit,
both leads are combined in one electrical connection.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
For examples and ready to use parameters please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet:
http://www.infineon.com/silicondiscretes

3 Aug-20-2001
 SIEGET
25 BFP420

For non-linear simulation:

 Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.
 If you need simulation of the reverse characteristics, add the diode with the
C'-E'- diode data between collector and emitter.

 Simulation of package is not necessary for frequencies < 100MHz.

For higher frequencies add the wiring of package equivalent circuit around the
non-linear transistor and diode model.
Note:

 This transistor is constructed in a common emitter configuration. This feature causes

an additional reverse biased diode between emitter and collector, which does not
effect normal operation.
C

E E
EHA07307

Transistor Schematic Diagram

The common emitter configuration shows the following advantages:

 Higher gain because of lower emitter inductance.

 Power is dissipated via the grounded emitter leads, because the chip is mounted
on copper emitter leadframe.

Please note, that the broadest lead is the emitter lead.

Common Emitter S- and Noise-parameter

For detailed S- and Noise-parameters please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon Technologies Application Notes
CD-ROM or see Internet: http://www.infineon.com/silicondiscretes

4 Aug-20-2001
 SIEGET
25 BFP420

Total power dissipation Ptot = f (TS ) Transition frequency fT = f (IC)

f = 2 GHz
VCE = parameter in V
200 30
mW GHz
2 to 4

1.5
160 24
1
22
140 0.75
20
P tot

fT
120 18
16
100
14

80 12 0.5
10
60
8

40 6
4
20
2

0 0
0 20 40 60 80 100 120 °C 150 0 5 10 15 20 25 30 mA 40
TS IC

Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load

P totmax/P totDC = f (tp)

10 3 10 1
Ptotmax / PtotDC

K/W
RthJS

D=0
0.005
0.01
10 2 - 0.02
0.5 0.05
0.2 0.1
0.1 0.2
0.05 0.5
0.02
0.01
0.005
D=0

10 1 -7 -6 -5 -4 -3 -2 0
10 0 -7 -6 -5 -4 -3 -2 0
10 10 10 10 10 10 s 10 10 10 10 10 10 10 s 10
tp tp

5 Aug-20-2001
 SIEGET
25 BFP420

Power gain Gma, Gms , |S21 |2 = f ( f ) Power gain Gma, Gms = f (I C)

VCE = 2V, IC = 20 mA VCE = 2V
f = parameter in GHz
44 30
dB
dB
0.9
36
24
32 22
1.8
G ms 20
28
18
G

G
2.4
24 16
3
20 14
4
12
16 5
|S 21|2 10
Gma 6
12 8

8 6
4
4
2
0 0
0.0 1.0 2.0 3.0 4.0 GHz 6.0 0 4 8 12 16 20 24 28 32 mA 40

f IC

Power gain Gma, Gms = f (VCE) Collector-base capacitance Ccb = f (VCB)

IC = 20 mA f = 1MHz
f = parameter in GHz
30 0.30
dB

0.9
pF
24
22 1.8
20 0.20
Ccb

2.4
18
G

16 3
0.15
14 4
12
5
10 6 0.10
8
6
0.05
4
2
0 0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V 4.5 0 1 2 V 4
VCE VCB

6 Aug-20-2001
 SIEGET
25 BFP420

Noise figure F = f (IC ) Noise figure F = f (IC)

VCE = 2 V, ZS = ZSopt VCE = 2 V, f = 1.8 GHz

4.0 3.0

dB
dB

3.0

2.0
2.5
F

F
2.0 1.5
ZS = 50 Ohm
ZS = ZSopt
1.5
f = 6 GHz 1.0
f = 5 GHz
1.0 f = 4 GHz
f = 3 GHz
f = 2.4 GHz 0.5
0.5 f = 1.8 GHz
f = 0.9 GHz

0.0 0.0
0 4 8 12 16 20 24 28 32 mA 38 0 4 8 12 16 20 24 28 mA 36
IC IC

Noise figure F = f ( f ) Source impedance for min.

VCE = 2 V, ZS = ZSopt Noise Figure versus Frequency
VCE = 2 V, IC = 5 mA / 20 mA
3.0
+j50

dB +j25 +j100

+j10
2.0
2.4GHz
1.8GHz
F

3GHz 0.9GHz

1.5 0
10 25 50 100 0.45GHz

4GHz

1.0 5GHz
IC = 20 mA -j10
IC = 5 mA 6GHz

0.5 -j25 -j100

-j50

0.0
0.0 1.0 2.0 3.0 4.0 GHz 6.0

7 Aug-20-2001