Solid State Electronics EC210

Arab Academy for Science and Technology

AAST – Cairo
Spring 2015

Lecture 9
Band Theory:
E-K Diagram, Energy Gaps and Effective Mass

Lecture Notes Prepared by:

Dr. Amr Bayoumi, Dr. Nadia Rafat

1
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Electronic Materials and
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From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
Lecture Notes Prepared by: Lecture 9:E-K Diagram, Band Gap, Solid State Electronics EC210, Spring 2015
Arab Academy for Science and Technology
Dr. Amr Bayoumi, Dr. Nadia Rafat Effective Mass
AAST – Cairo, 2
 Pages
• Kasap:
– P.355 (Kronig Penny)
– P.303-304, p. 454-455 (Effective Mass)

From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
Lecture Notes Prepared by: Lecture
Lecture
8: 9:E-K
Band Diagram,
Theory: Kronig-Penny
Band Gap, Solid State Electronics EC210, Spring 2015
Arab Academy for Science and Technology
Dr. Amr Bayoumi, Dr. Nadia Rafat Model and Effective
EffectiveMass
Mass
AAST – Cairo, 3
 E-K Diagram
usingKronig-Penney Model

Source: Dr. M. Fedawy’s Lecture notes

Fig 4.52

From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
4
 Energy Gap (Bandgaps, Eg)
E
Second
Band Brillouin Zone

Energy gap

Band First
Brillouin Zone
k1[10]
E
Band Second Brillouin
Zone
Energy gap

From Principles of
Electronic Materials First
Band
and Devices, Third Brillouin Zone
Edition, S.O. Kasap (©
McGraw-Hill, 2005) k3[11]
 
a a
The E-k behavior for the electron along different directions in the two
dimensional crystal. The energy gap along [10] is at /a whereas it is
at /a along [11].
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
Lecture Notes Prepared by: Lecture 9:E-K Diagram, Band Gap, Solid State Electronics EC210, Spring 2015
Fig 4.54
Arab Academy for Science and Technology
Dr. Amr Bayoumi, Dr. Nadia Rafat Effective Mass
AAST – Cairo, 5
 Energy Gaps (Eg)
Energy gap

2nd BZ 2nd BZ 2nd BZ

band & band
1st BZ
Energy gap overlapped Energy gap Energy gap = Eg
band
1st BZ 1st BZ
band band
Bands overlap Overlapped
[10] [11] [10] [11]
energy gaps energy gaps
(a) Metal (b) Semiconductor and insulator

(a) Metal: For the electron in a metal there is no apparent energy gap
because the 2nd BZ (Brillouin Zone) along [10] overlaps the 1st BZ along
[11]. Bands overlap the energy gaps. Thus the electron can always find any
energy by changing its direction.
(b) Semiconductor or insulator: For the electron in a semiconductor there is
an energy gap arising from the overlap of the energy gaps along [10] and From Principles of
Electronic Materials
[11] directions. The electron can never have an energy within this energy and Devices, Third
gap, Eg. Edition, S.O. Kasap (©
McGraw-Hill, 2005)
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
Lecture Notes Prepared by: Lecture 9:E-K Diagram, Band Gap, Solid State Electronics EC210, Spring 2015
Fig 4.55
Arab Academy for Science and Technology
Dr. Amr Bayoumi, Dr. Nadia Rafat Effective Mass
AAST – Cairo, 6
 E-
E
Ev
b' b
(a) VB

-k k
E

b'
(b)
From Principles of VB
Electronic Materials and
Devices, Third Edition,
S.O. Kasap (© McGraw-
Hill, 2005) -k k
(a) In a full valence band there is no net contribution to the current.
There are equal numbers of electrons (e.g. at b and b') with
opposite momenta. (b) If there is an empty state (hole) at b at the
top of the band then the electron at b' contributes to the current.
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
Lecture Notes Prepared by: Lecture 9:E-K Diagram, Band Gap, Solid State Electronics EC210, Spring 2015
Fig 5.52
Arab Academy for Science and Technology
Dr. Amr Bayoumi, Dr. Nadia Rafat Effective Mass
AAST – Cairo, 7
 The E-k Diagram The Energy Band
Ek Diagram

CB

CB
Empty k
e- e-
Ec Ec
Eg h h
Ev Ev
h+
Occupied k h+
VB
From Principles of
Electronic Materials
and Devices, Third
VB
Edition, S.O. Kasap (© k
McGraw-Hill, 2005) -/a /a
The E-k diagram of a direct bandgap semiconductor such as GaAs. The E-k
curve consists of many discrete points each point corresponding to a possible
state, wavefunction y k(x), that is allowed to exist in the crystal. The points
are so close that we normally draw the E-k relationship as a continuous curve.
In the energy range Ev to Ec there are no points (yk(x) solutions).
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
Lecture Notes Prepared by: Lecture 9:E-K Diagram, Band Gap, Solid State Electronics EC210, Spring 2015
Fig 5.49
Arab Academy for Science and Technology
Dr. Amr Bayoumi, Dr. Nadia Rafat Effective Mass
AAST – Cairo, 8
 E
E E
CB CB
Lattice Lattice
scattering scattering

k1-
k- k3+
k+ k1+k2+
-k k -k k

-x kav = 0 x -x kav > 0 x

From Principles of
(a) (b)
Electronic Materials
and Devices, Third (a) In the absence of a field, over a long time, average of all k values is
Edition, S.O. Kasap (©
McGraw-Hill, 2005) zero, there is no net momentum in any one particular direction. (b) In
the presence of a field E in the -x direction, the electron accelerates in
the +x direction increasing its k value along x until it is scattered to a
random k value. Over a long time, average of all k values is along the
+x direction. Thus the electron drifts along +x.
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
Lecture Notes Prepared by: Lecture 9:E-K Diagram, Band Gap, Solid State Electronics EC210, Spring 2015
Fig 5.51
Arab Academy for Science and Technology
Dr. Amr Bayoumi, Dr. Nadia Rafat Effective Mass
AAST – Cairo, 9
 Effective Mass
In vacuum In semiconductor

q
q

Fext = (-q)E
F = q e = moa Fext + Fint= moa
Fext = mn*a
where
where
mo is the electron mass mn* is the electron effective mass

10
 Effective Mass
Ex Ex

CRYSTAL
VACUUM
F int
e- Fext Fext
a= a=
me m e*
Fext

x x
(a) (b)
(a) An external force Fext applied to an electron in vacuum results in an
acceleration avac = Fext / me . (b) An external force Fext applied to an
electron in a crystal results in an acceleration acryst = Fext / me*. ( Ex is the
electric field.)

From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
From Principles of Electronic Materials and Solid State Electronics EC210, Spring 2015
Lecture Notes Prepared by: Lecture 9:E-K Diagram, Band Gap,
Devices, Third Edition, S.O. Kasap (© Fig 4.19
Arab Academy for Science and Technology
Dr. Amr Bayoumi, Dr. Nadia Rafat
McGraw-Hill, 2005)
Effective Mass
AAST – Cairo, 11
 Example of Effective Mass

From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
From Principles of Electronic
Lecture Notes Prepared by: Lecture 9:E-K Diagram, Band Gap, Solid State ElectronicsMaterials
EC210, Spring
and2015
Devices, Third
Arab Academy for ScienceEdition,
and Technology
S.O. Kasap (©
Dr. Amr Bayoumi, Dr. Nadia Rafat Effective Mass
AAST – Cairo, 12
 Effective Mass
Group Velocity defined as the velocity of the wavefunction of the
electrons (analogous to speed of sinusoidal wave ):
𝑑𝑥 𝑑ω
𝑣𝑔 = = , 𝑑𝑥 = 𝑣𝑔 𝑑𝑡
𝑑𝑡 𝑑𝑘

𝐸 1 𝑑𝐸
𝜔 = → 𝑣𝑔 = → 𝑑𝐸 = 𝑣𝑔 ℏ 𝑑𝑘
ℏ ℏ 𝑑𝑘

1 𝑑𝐸 𝑑𝑘
𝑑𝐸 = 𝐹𝑒𝑥𝑡 𝑑𝑥 = 𝐹𝑒𝑥𝑡 𝑣𝑔 𝑑𝑡 → 𝐹𝑒𝑥𝑡 = → 𝐹𝑒𝑥𝑡 = ℏ
𝑣𝑔 𝑑𝑡 𝑑𝑡

From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
Lecture Solid State Electronics EC210, Spring 2015
13 Notes Prepared by: Lecture 9:E-K Diagram, Band Gap,
Arab Academy for Science and Technology
Dr. Amr Bayoumi, Dr. Nadia Rafat Effective Mass
AAST – Cairo, 13
 Effective Mass (2)
Acceleration:

𝑑𝑣𝑔 𝑑 1 𝑑𝐸 1 𝑑 𝑑𝐸 1 𝑑 𝑑𝐸 𝑑𝑘
𝑎= = = =
𝑑𝑡 𝑑𝑡 ℏ 𝑑𝑘 ℏ 𝑑𝑘 𝑑𝑡 ℏ 𝑑𝑘 𝑑𝑘 𝑑𝑡

1 𝑑2𝐸 𝑑𝑘 1 𝑑2𝐸 𝑑𝑘 1 𝑑2𝐸

𝑎= = 2 2ℏ = 2 2 𝐹𝑒𝑥𝑡
ℏ 𝑑𝑘 𝑑𝑡 ℏ 𝑑𝑘 𝑑𝑡 ℏ 𝑑𝑘
2

Using 𝐹𝑒𝑥𝑡 = 𝑚∗ 𝑎
−1 −1
∗ 1 𝑑2 𝐸 𝑑2 𝐸
𝑚 = 2 2 = ℏ2
ℏ 𝑑𝑘 𝑑𝑘2

From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
Lecture Solid State Electronics EC210, Spring 2015
14 Notes Prepared by: Lecture 9:E-K Diagram, Band Gap,
Arab Academy for Science and Technology
Dr. Amr Bayoumi, Dr. Nadia Rafat Effective Mass
AAST – Cairo, 14