BLF245

RF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The ASI BLF245 is a vertical D-MOS
transistor designed for large signal
amplifier applications in the VHF
frequency range.

FEATURES INCLUDE:
PACKAGE STYLE .380 4L FLG
• PG = 13 dB Typical at 175 MHz
• 30:1 Load VSWR Capability
• Omnigold™ metalization system

MAXIMUM RATINGS
ID 6.0 A
VDS 65 V
VGS ±20 V
PDISS 68 W @ TC = 25 °C
TJ -65 °C to +150 °C
TSTG -65 °C to +200 °C
θJC 1.8 °C/W 1 = DRAIN 2 = GATE 3&4 = SOURCE

NONE
CHARACTERISTICS TC = 25 °C
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVDSS ID = 10 mA 65 V
IDSS VDS = 28 V VGS = 0 V 2.0 mA
IGSS VDS = 0 V VGS = ±20 V 1.0 µA
VGS(th) VDS = 10 V ID = 10 mA 2.0 4.5 V
gfs VDS = 10 V ID = 1.5 A 1.2 1.9 S
Ciss 125
Coss VDS = 28 V VGS = 0 V f = 1.0 MHz 75 pF
Crss 7.0
PG VDS = 28 V IDQ = 25 mA Pout = 30 W 13 16 dB
ηD f = 150 MHz 50 60 %
ψ VSWR = 30:1 AT ALL PHASE ANGLES NO DEGRADATION IN OUTPUT POWER

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.