BUV47, BUV47A

NPN SILICON POWER TRANSISTORS

Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997

● Rugged Triple-Diffused Planar Construction

SOT-93 PACKAGE
● 9 A Continuous Collector Current (TOP VIEW)

● 1000 Volt Blocking Capability B 1

C 2

E 3

Pin 2 is in electrical contact with the mounting base.

MDTRAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT
BUV47 850
Collector-emitter voltage (V BE = -2.5 V) VCEX V
BUV47A 1000
BUV47 850
Collector-emitter voltage (RBE = 10 Ω) VCER V
BUV47A 1000
BUV47 400
Collector-emitter voltage (IB = 0) VCEO V
BUV47A 450
Continuous collector current IC 9 A
Peak collector current (see Note 1) ICM 15 A
Continuous base current IB 3 A
Peak base current IBM 6 A
Continuous device dissipation at (or below) 25°C case temperature Ptot 120 W
Operating junction temperature range Tj -65 to +150 °C
Storage temperature range Tstg -65 to +150 °C

NOTE 1: This value applies for tp ≤ 5 ms, duty cycle ≤ 2%.

PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
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BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Collector-emitter BUV47 400
V CEO(sus) IC = 200 mA L = 25 mH (see Note 2) V
sustaining voltage BUV47A 450
Base-emitter
V(BR)EBO IE = 50 mA IC = 0 (see Note 3) 7 30 V
breakdown voltage
VCE = 850 V VBE = 0 BUV47 0.15
Collector-emitter V CE = 1000 V VBE = 0 BUV47A 0.15
ICES mA
cut-off current V CE = 850 V VBE = 0 TC = 125°C BUV47 1.5
V CE = 1000 V VBE = 0 TC = 125°C BUV47A 1.5
VCE = 850 V RBE = 10 Ω BUV47 0.4
Collector-emitter V CE = 1000 V RBE = 10 Ω BUV47A 0.4
ICER mA
cut-off current V CE = 850 V RBE = 10 Ω TC = 125°C BUV47 3.0
V CE = 1000 V RBE = 10 Ω TC = 125°C BUV47A 3.0
Emitter cut-off
IEBO VEB = 5V IC = 0 1 mA
current
Collector-emitter IB = 1A IC = 5A 1.5
VCE(sat) (see Notes 3 and 4) V
saturation voltage IB = 2.5 A IC = 8A 3.0
Base-emitter
V BE(sat) IB = 1A IC = 5A (see Notes 3 and 4) 1.6 V
saturation voltage
Current gain
ft VCE = 10 V IC = 0.5 A f= 1 MHz 8 MHz
bandwidth product
Cob Output capacitance VCB = 20 V IC = 0 f = 0.1 MHz 105 pF
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 1 °C/W

resistive-load-switching characteristics at 25°C case temperature

†
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ton Turn on time 1.0 µs
IC = 5 A IB(on) = 1 A IB(off) = -1 A
ts Storage time 3.0 µs
V CC = 150 V (see Figures 1 and 2)
tf Fall time 0.8 µs
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)

†
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tsv Voltage storage time IC = 5 A IB(on) = 1 A VBE(off) = -5 V 4.0 µs
tfi Current fall time TC = 100°C (see Figures 3 and 4) 0.4 µs

PRODUCT INFORMATION

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 BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997

PARAMETER MEASUREMENT INFORMATION

+25 V

BD135 680 µ F
120 Ω 100 Ω
T

V1 V cc V=CC250 V
100 µ F
47 Ω

tp TUT
15 Ω

V1 100 Ω
82 Ω 680 µ F
BD136
tp = 20 µs
Duty cycle = 1%
V1 = 15 V, Source Impedance = 50 Ω

Figure 1. Resistive-Load Switching Test Circuit

C 90% 90% E
IC
A - B = td
B - C = tr
B 10% 10% F
E - F = tf 0%
D - E = ts
A - C = ton
D - F = toff
dIB
≥ 2 A/µs
90% D dt
IB
I B(on)

A 10%
0%

I B(off)

Figure 2. Resistive-Load Switching Waveforms

PRODUCT INFORMATION

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BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997

PARAMETER MEASUREMENT INFORMATION

33 Ω
+5V

D45H11
BY205-400

BY205-400
33 Ω RB
(on)
1 pF
180 µ H
vcc
V Gen 2N2222
1 kΩ
68 Ω 0.02 µ F TUT
BY205-400
1 kΩ Vclamp = 400 V

+5V

5X BY205-400
270 Ω BY205-400 1 kΩ

2N2904
Adjust pw to obtain IC
D44H11
47 Ω
For IC < 6 A VCC = 50 V
V
For IC ≥ 6 A VCC = 100 V BE(off)
100 Ω

Figure 3. Inductive-Load Switching Test Circuit

I B(on)
A (90%)
A - B = tsv IB Base Current
B - C = trv
D - E = tfi
E - F = tti
C 90%
B - E = txo

B 10%
V Collector Voltage
CE

D (90%)

E (10%)
I Collector Current
C(on)
F (2%)
NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 Ω, Cin < 11.5 pF.
B. Resistors must be noninductive types.

Figure 4. Inductive-Load Switching Waveforms

PRODUCT INFORMATION

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 BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS

TYPICAL DC CURRENT GAIN COLLECTOR-EMITTER SATURATION VOLTAGE

vs vs
COLLECTOR CURRENT BASE CURRENT
TCP762AA TCP762AB
100 5·0

VCE(sat) - Collector-Emitter Saturation Voltage - V

VCE = 5 V TC = 125°C TC = 25°C
TC = 25°C IC = 8 A
TC = -65°C IC = 6 A
4·0
hFE - Typical DC Current Gain

IC = 4 A
IC = 2 A

3·0

10

2·0

1·0

1·0 0
0·1 1·0 10 0 0·5 1·0 1·5 2·0 2·5
IC - Collector Current - A IB - Base Current - A

Figure 5. Figure 6.

COLLECTOR-EMITTER SATURATION VOLTAGE COLLECTOR CUT-OFF CURRENT

vs vs
BASE CURRENT CASE TEMPERATURE
TCP762AK TCP762AC
0·5 10
VCE(sat) - Collector-Emitter Saturation Voltage - V

TC = 100°C
IC = 8 A
ICES - Collector Cut-off Current - µA

IC = 6 A
0·4 IC = 4 A
1·0
IC = 2 A

BUV47A
0·3
VCE = 1000 V
0·1

0·2 BUV47
VCE = 850 V

0·01
0·1

0 0·001
0 0·5 1·0 1·5 2·0 2·5 -80 -60 -40 -20 0 20 40 60 80 100 120 140
IB - Base Current - A TC - Case Temperature - °C

Figure 7. Figure 8.

PRODUCT INFORMATION

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BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAP762AA
100

10
IC - Collector Current - A

1·0

0.1
tp = 100 µs
tp = 1 ms
tp = 10 ms BUV47
DC Operation BUV47A
0·01
1·0 10 100 1000
VCE - Collector-Emitter Voltage - V

Figure 9.

THERMAL INFORMATION

THERMAL RESPONSE JUNCTION TO CASE

vs
POWER PULSE DURATION
ZθJC / Rθ JC - Normalised Transient Thermal Impedance

TCP762AD
1·0
50%

20%

10%
0·1
5%

2%

1%
0·01
0%
t1
duty cycle = t1/t2 t2
Read time at end of t1,

TJ(max) - TC = PD(peak) · ( )
ZθJC
Rθ JC
· RθJC(max)

0·001
10-5 10-4 10-3 10-2 10 -1
t1 - Power Pulse Duration -s

Figure 10.

PRODUCT INFORMATION

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 BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997

MECHANICAL DATA
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.

SOT-93 4,90
4,70

15,2 1,37
ø
4,1
14,7 3,95 1,17
4,0
4,15

16,2 MAX.
12,2 MAX.

31,0 TYP.

18,0 TYP.

1 2 3

1,30 0,78
1,10 0,50

11,1
2,50 TYP.
10,8

ALL LINEAR DIMENSIONS IN MILLIMETERS

NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW

PRODUCT INFORMATION

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BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE

SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

Copyright © 1997, Power Innovations Limited

PRODUCT INFORMATION