Professional Documents
Culture Documents
com
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
C 2
E 3
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
DataSheet 4 U .com
www.DataSheet4U.com
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 1 °C/W
AUGUST 1978 - REVISED SEPTEMBER 2002
2 Specifications are subject to change without notice.
DataSheet 4 U .com
www.DataSheet4U.com
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
+25 V
BD135 680 µF
120 Ω 100 Ω
T
V1 V cc V=CC250 V
100 µF
47 Ω
tp TUT
15 Ω
V1 100 Ω
82 Ω 680 µF
BD136
tp = 20 µs
Duty cycle = 1%
V1 = 15 V, Source Impedance = 50 Ω
C 90% 90% E
IC
A - B = td
B - C = tr
B 10% 10% F
E - F = tf 0%
D - E = ts
A - C = ton
D - F = t off
dIB
≥ 2 A/µs
90% D dt
IB
I B(on)
A 10%
0%
I B(off)
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
DataSheet 4 U .com
www.DataSheet4U.com
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
33 Ω
+5V
D45H11
BY205-400
BY205-400
33 Ω RB
(on)
1 pF
180 µH
vcc
V Gen 2N2222
1 kΩ
68 Ω 0.02 µF BY205-400
TUT
1 kΩ Vclamp = 400 V
+5V
5X BY205-400
270 Ω BY205-400 1 kΩ
2N2904
Adjust pw to obtain IC
D44H11
47 Ω
For IC < 6 A VCC = 50 V
V
For IC ≥ 6 A VCC = 100 V BE(off)
100 Ω
I B(on)
A (90%)
A - B = tsv IB Base Current
B - C = trv
D - E = tfi
E - F = tti
C 90%
B - E = txo
B 10%
V Collector Voltage
CE
D (90%)
E (10%)
I Collector Current
C(on)
F (2%)
NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t r < 15 ns, Rin > 10 Ω, C in < 11.5 pF.
B. Resistors must be noninductive types.
AUGUST 1978 - REVISED SEPTEMBER 2002
4 Specifications are subject to change without notice.
DataSheet 4 U .com
www.DataSheet4U.com
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TC = 25°C
3·0
10
2·0
1·0
1·0 0
0·1 1·0 10 20 0·1 1·0 10
IC - Collector Current - A IB - Base Current - A
Figure 5. Figure 6.
IC = 5 A
VBE(sat) - Base-Emitter Saturation Voltage - V
IC = 10 A
1·5
IC = 15 A
4·0 IC = 15 A
TC = 100°C 1·4
1·3
3·0 IC = 10 A
1·2
2·0
1·1
1·0 IC = 5 A
1·0
0·9
0 0·8
0·1 1·0 10 0 1 2 3 4 5 6
IB - Base Current - A IB - Base Current - A
Figure 7. Figure 8.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5
DataSheet 4 U .com
www.DataSheet4U.com
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
1·0
BUV48A
VCE = 1000 V
0·1
BUV48
VCE = 850 V
0·01
-80 -60 -40 -20 0 20 40 60 80 100 120 140
TC - Case Temperature - °C
Figure 9.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAP765AA
100
IC - Collector Current - A
10
1·0
tp = 10 µs
tp = 50 µs
tp = 100 µs
0.1
tp = 500 µs
tp = 1 ms
tp = 2 ms BUV48
DC Operation BUV48A
0·01
1·0 10 100 1000
VCE - Collector-Emitter Voltage - V
Figure 10.
AUGUST 1978 - REVISED SEPTEMBER 2002
6 Specifications are subject to change without notice.
DataSheet 4 U .com
www.DataSheet4U.com
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
MECHANICAL DATA
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
SOT-93 4,90
4,70
15,2 1,37
ø 4,1 14,7 3,95 1,17
4,0
4,15
16,2 MAX.
12,2 MAX.
31,0 TYP.
18,0 TYP.
1 2 3
1,30 0,78
1,10 0,50
11,1
2,50 TYP.
10,8
NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
7
DataSheet 4 U .com