UNIVERSIDAD INDUSTRIAL DE SANTANDER

Escuelas de Ingenierías Eléctrica, Electrónica y de Telecomunicaciones

DISPOSITIVOS ELECTRÓNICOS
Habilitación 2017-1. Prof: JA, JM & ER.

Name:___________________________________________________ Code:_____________

1. [1.0] Determine how the transconductance of a MOSFET (operating in saturation)

changes if:

Constant x2 x1/2 x4 x1/4

a) W/Lis doubled but ID remains constant.
b) VGS − VTH is doubled but ID remains
constant.
c) ID is doubled but W/L remains
constant.
d) ID is doubled but VGS − VTH remains
constant.

2. [0.5] A silicon semiconductor n-type material, has a 0.1 um length with a 0.05um x
0.05um transversal section maintaining a 1 V differential potential between its
𝑐𝑚2 𝑐𝑚2
terminals. Assuming a doping level of 1017 𝑐𝑚−3, 𝜇𝑛 = 1350 and 𝜇𝑝 = 480 ,
(𝑉∗𝑠) (𝑉∗𝑠)
the total current across the material at 100 ℃ is:

a) 25uA
b) 126uA
c) 60uA
d) 54uA
e) Other: __________

Remember that:
𝟑 −𝑬𝒈
𝟏𝟓 𝟐 𝟐𝒌𝑻 [𝒄𝒎−𝟑 ],
𝒏𝒊 = 𝟓. 𝟐 ∗ 𝟏𝟎 𝑻 𝒆
where, Eg = 1.12 eV and k=1.38x10−23J/K.

3. [0.5] In a 𝑝+ − 𝑛 junction reversed biased at 10 V, the capacitance is 10 pF. If the

doping of the n side is doubled and the reversed bias changed to 80 V, what is the
capacitance?

a) 20 pF
b) 80 pF
c) 1.25 pF
d) 5 pF
e) Other: _______
 UNIVERSIDAD INDUSTRIAL DE SANTANDER
Escuelas de Ingenierías Eléctrica, Electrónica y de Telecomunicaciones
DISPOSITIVOS ELECTRÓNICOS
Habilitación 2017-1. Prof: JA, JM & ER.

Name:___________________________________________________ Code:_____________

4. [0.5] Assuming a VDon = 0.5V for the diodes shown in Fig. 1, please chose the correct
value for the current flowing through the resistor.

a) 1.75mA
b) 0mA
c) 2.75mA
d) 2mA
e) 3mA
f) Other:______

Fig. 1

5. [0.5] Considering the channel length modulation effect and neglecting the body effect, the small
signal gain Vout/Vin for the circuit shown in Fig. 2 is:

Av =

Fig. 2
 UNIVERSIDAD INDUSTRIAL DE SANTANDER
Escuelas de Ingenierías Eléctrica, Electrónica y de Telecomunicaciones
DISPOSITIVOS ELECTRÓNICOS
Habilitación 2017-1. Prof: JA, JM & ER.

Name:___________________________________________________ Code:_____________

PROBLEMS.
The following problems must be solved in these pages.

6. [1.0] We wish to design the circuit shown in Fig. 3 for a voltage gain of 3. If (W/L)1 =
20um/0.18um, determine (W/L)2. Assume λ=0, γ=0.

Fig. 3
 UNIVERSIDAD INDUSTRIAL DE SANTANDER
Escuelas de Ingenierías Eléctrica, Electrónica y de Telecomunicaciones
DISPOSITIVOS ELECTRÓNICOS
Habilitación 2017-1. Prof: JA, JM & ER.

Name:___________________________________________________ Code:_____________

7. [1.0] For the circuit in Fig. 4, determine an expression for Vout as a function of voltages V1,
V2 and the resistances. Assume ideal Opamps.

Fig. 4
 UNIVERSIDAD INDUSTRIAL DE SANTANDER
Escuelas de Ingenierías Eléctrica, Electrónica y de Telecomunicaciones
DISPOSITIVOS ELECTRÓNICOS
Habilitación 2017-1. Prof: JA, JM & ER.