Digital Assignment-1

Module-1
1. For a silicon crystal doped with boron, what must NA be if at T=300K the
electron concentration drops below the intrinsic level by a factor of 106?

2. Consider silicon at T = 300 K. Assume the electron concentration varies

linearly from n = 1012 cm−3 to n = 1016 cm−3 over the distance from x = 0 to x
= 3 μm. Assume Dn = 35 cm2/s. Calculate the diffusion current density of
Silicon.

3. The linear electron-concentration profile shown in Fig. 1 has been

established in a piece of silicon. If no=1017/cm3 and W = 1 μm, find the
electron-current density in micro amperes per micron squared (μA/μm2). If
a diffusion current of 1 mA is required what must the cross-sectional area
(in a direction perpendicular to the page) be?

Fig. 1
 Module-2
4. A silicon diode said to be a 1mA device displays a forward voltage of 0.7
V at a current of 1 mA. Find the junction scaling constant Is. What scaling
constants would apply for a 1A diode of the same manufacturer that
conducts 1A at 0.7V?

5. For the circuit shown in Fig. 2, find ID and VD for the case VDD= 5 V and
R=10 kΩ. Assume that the diode has a voltage of 0.7 V at 1mA current.

Fig. 2