Professional Documents
Culture Documents
Zero-Electrolytics 555 Timer
The more resistance the better
10M
the FET rises to about 40 °C above the ambient
1G
K3
On 1N4007
temperature (with UGS > 10 V). This may seem 12V
0W5
1
2 +
10
4
D4
like a lot, and it does feel hot, but the junction
R
1 13
DIS DIS
14 R2
temperature will still be within its safe range. The IC1
C3
2
IC1A
5 12
IC1B
9
JP1 D3 LOAD
THR OUT THR OUT
10M
T1 K4
MOSFET can also be mounted vertically, but this 7
100n 6 8 S1
2x 1
TR TR 1N4148 2 -
doesn’t make a lot of difference to its heat loss.
CV
CV
R5
C1 C2 IRF1405
11
The switch (S1) is mounted at the edge of the
10k
K2
390n 680n Timer on 1
PCB. When the PCB is mounted in an enclosure 2 -BT2
IC1=TLC556 130257 - 11
the switch can still be operated through a small
hole in the side of the case. The circuit can be
permanently activated via a wire link or jumper
across JP1 (obviously only as long as power is is rated for use with supply voltages up to 18 V). Figure 1.
applied). Alternatively, you can solder two wires With a lower supply voltage (less than 10 V), it The circuit diagram
onto JP1 and connect them to an external switch, is recommended that you limit the current to be for the timer circuit is
instead of using switch S1. switched. The ON resistance of T1 increases with straightforward. The most
noticeable component is
a lower gate-source voltage, which increases the
R1, a resistor with a value
Practical considerations heating significantly. In this case, you will need
of 1 GΩ.
The measured period of IC1A in the prototype to add a heatsink.
built in the Elektor Labs was initially found to be (130257)
over 20% longer (333 s) than the theoretical
Internet Links
value of 275.7 s from:
[1] www.elektor-magazine.com/130257
T = C1 (R1+2R2) ln2 [s]
circuit uses only about 300 µA. At higher voltages IC1 = TLC556CN (DIP14)
ww