Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4

By D. A. Neamen Problem Solutions

______________________________________________________________________________________

Chapter 4
4.1
  Eg 
n i2  N c N  exp  (b)
kT 


n i2  5  10 12  2
 2.5  10 25
 T 
3
  Eg 
 N cO N O   exp 
 300  kT 
   1.12  300  
3


 2.912  10 38   T 
  exp 
  0.0259  T  
 300 
where N cO and N O are the values at 300 K.
By trial and error, T  417.5 K
_______________________________________
(a) Silicon
T (K) kT (eV) n i (cm 3 ) 4.4
200 0.01727 7.68  10 4  200 
400 0.03453 At T  200 K, kT   0.0259   
2.38  1012  300 
600 0.0518
9.74  10 14  0.017267
eV
(b) Germanium (c) GaAs  400 
T (K) n i (cm 3 ) n i (cm 3 At T  400 K, kT   0.0259   
)  300 
200 2.16  10 10 1.38  0.034533
400 8.60  10 14 3.28  10 9 eV
600 5.72  1012
3.82  10 16
n i2  400 

7.70 10  10 2
 3.025  10 17
_______________________________________ n 2
i  200  1.40  10  2 2

4.2
Plot  400 
3
  Eg 
_______________________________________   exp  
 300   0.034533 
 
4.3  200 
3
  Eg 
  exp  
  Eg   300   0.017267 
(a) n  N c N  exp 
2
i 
 kT 
 Eg Eg 
3  8 exp   
5 10  11 2

 2.8  1019 1.04  1019    T 
  0.017267 0.034533 
 300 
3.025  10 17  8 exp E g  57.9139  28.9578  
  1.12  or
 exp  
  0.0259  T 300  
3  3.025  1017 

2.5  10 23  2.912  10 38   T 
 E g  28.9561  ln   38.1714

 300   8 
  1.12  300  or E g  1.318 eV
 exp  
  0.0259  T   Now
By trial and error, T  367.5 K 3

 7.70 10  10 2
 N co N o 
 400 

 300 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
Let E  E c  x
  1.318   x
 exp 
 0.034533  Then g c f F  x exp 
 kT 
To find the maximum value:
5.929  10 21  N co N o  2.370  2.658  10 17  d  g c f F  1 1 / 2  x
 x exp 
so N co N o  9.41 10 cm 37 6
dx 2  kT 
_______________________________________ 1  x
  x 1 / 2 exp  0
kT  kT 
which yields
1 x1/ 2 kT
1/ 2
 x
2x kT 2
4.5 The maximum value occurs at
kT
E  Ec 
  1.10  2
exp 
ni  B   kT    0.20 
  exp 
n i  A   0.90   kT 
exp 
 kT 
For T  200 K, kT  0.017267 eV
For T  300 K, kT  0.0259 eV (b)
For T  400 K, kT  0.034533 eV
   EF  E 
(a) For T  200 K, g  1  f F   E  E exp  
 kT 
ni  B    0.20  6    E  E  
 exp   9.325  10  E  E exp 
n i  A  0. 017267   kT 

(b) For T  300 K,
   E F  E  
ni  B    0.20   exp  
 exp   4.43  10
4
 kT 
n i  A  0 . 0259  Let E  E  x
(c) For T  400 K,
 x
Then g  1  f F  x exp 
ni  B    0.20  3
 kT 
 exp   3.05  10 To find the maximum value
n i  A  0 . 034533 
_______________________________________ d  g  1  f F   d   x 
  x exp   0
4.6 dx dx   kT  
   E  EF   Same as part (a). Maximum occurs at
(a) g c f F  E  E c exp   kT
 kT  x
2
   E  Ec   or
 E  E c exp  
 kT  kT
E  E 
2
   Ec  E F   _______________________________________
 exp  
 kT  4.7
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
   E1  E c   1  N 
E1  E c exp   E Fi  E midgap   kT  ln  
n  E1   kT  2  Nc 

n E 2     E2  Ec  
E 2  E c exp    
 kT  ln 1.04  1019
19
1
 kT     0.4952 kT 

where
2  2.8  10 
kT
E1  E c  4kT and E 2  E c  T (K) kT (eV) ( E Fi  E midgap )
2
Then (eV)
n  E1  4kT    E1  E 2   200 0.01727  0.0086
 exp    0.0171
n E 2 
400 0.03453
kT  kT  600 0.0518  0.0257
2
_______________________________________
  1 
 2 2 exp    4     2 2 exp  3.5 4.12
  2 
3  m *p 
or (a) E Fi  E midgap  kT ln 
 m n* 
n  E1 
4  
 0.0854
n E 2  3
  0.0259  ln
 0.70 

4  1.21 
_______________________________________
 10.63 meV
4.8 (b)
Plot
_______________________________________
E Fi  E midgap 
3
 0.0259 ln 0.75 
4  0.080 
 43.47 meV
_______________________________________

4.9
Plot
_______________________________________

4.10
4.13
 m *p 
3
E Fi  E midgap  kT ln  Let g c  E   K  constant
4  m n* 
  Then

Silicon: m p  0.56m o , m n  1.08m o
* *
 E  f F  E  dE
E Fi  E midgap  0.0128 eV
no  g
Ec
c


Germanium: m *p  0.37 m o , 1
m  0.55m o
*
K 
E c 1  exp
 E  EF 
dE
n
 
E Fi  E midgap  0.0077 eV  kT 
   E  EF  

Gallium Arsenide: m *p  0.48m o ,
K  exp 
Ec
kT  dE

m n*  0.067 m o
Let
E Fi  E midgap  0.0382 eV
E  Ec
_______________________________________  so that dE  kT  d
kT
4.11 We can write
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
E  E F   Ec  EF    E  Ec  

so that
   kT   exp     kT  d
0

We find that
   E  EF      Ec  E F  
exp    exp    exp    

 kT   kT    exp   d  exp       1 0
 1
The integral can then be written as 0

So

   Ec  E F  
    Ec  E F  
n o  C1  kT  exp 
2
n o  K  kT  exp    exp   d kT 
 kT  0
 
which becomes _______________________________________

   Ec  EF   4.15
n o  K  kT  exp  
 kT  r1  m 
We have r  o* 
_______________________________________ ao  m 
4.14 For germanium, r  16 , m *  0.55m o
 
Let g c E  C1 E  E c   for E  E c Then
 1 
Then r1  16    a o   29  0.53

 0.55 
no  g c  E  f F  E  dE or
Ec
o

 E  Ec  r1  15.4 A
 C1 
E c 1  exp
 E  EF 
dE The ionization energy can be written as
  2

 kT  E  
 m *   o 
  13.6 eV
 
 m o   s 
  E  EF  
 0.55
 exp 13.6  E  0.029 eV
 C1 E  E
Ec
C
 kT  dE


16 2
_______________________________________
Let
E  Ec 4.16
 so that dE  kT  d
kT r1  m 
We can write We have r  o* 
ao  m 
E  E F   E  Ec    Ec  E F 
For gallium arsenide, r  13.1 ,
m *  0.067m o
Then
Then  1  o
r1  13.1    0.53  104 A
   Ec  EF    0.067 
n o  C1 exp  
 kT 
The ionization energy is
  E  Ec  


   E  E c  exp   dE
 kT   m*   o 
2
0.067
Ec
E   


 

 13.6  13.6
or  mo   s  13.1 2
   Ec  EF   or
n o  C1 exp  
 kT  E  0.0053 eV
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
 po 
4.17 (d) E Fi  E F  kT ln 

 Nc   ni 
(a) E c  E F  kT ln 

 no   
2  10 16
 2.8  10  19   0.0259 ln 

  0.0259  ln  1.5  10
10
15 
 
 7  10   0.365 eV
 0.2148 eV _______________________________________
(b) E F  E   E g   Ec  E F 
4.19
 1.12  0.2148  0.90518
eV  Nc 
(a) E c  E F  kT ln 

   E F  E    no 
(c) p o  N  exp  
 kT   2.8  10 19 
  0.0259  ln 

 2  10
5


 1.04  10 19
 exp 
  0.90518 

 0.8436 eV
 0.0259  E F  E  E g   E c  E F 
3
 6.90  10 3 cm  1.12  0.8436
(d) Holes E F  E  0.2764 eV
 no  (b)
(e) E F  E Fi  kT ln 

 ni  
p o  1.04  1019 exp 
  0.27637 

7  1015    0.0259 
  0.0259 ln 
  2.414  10 14 cm 3
 1.5  10
10

(c) p-type
 0.338 eV _______________________________________
_______________________________________
4.20
4.18
 375 
 N  (a) kT   0.0259     0.032375 e
(a) E F  E  kT ln    300 

 po  V

3/ 2

  0.0259 ln
 1.04  1019 
 
n o  4.7  1017   375 
 exp 
  0.28 

  300   0.032375 
 2  10
16
 3
 0.162 eV  1.15  10 14 cm
(b) E c  E F  E g   E F  E 
E F  E  E g   E c  E F   1.42  0.28
 1.12  0.162  0.958
 1.14 eV
eV


(c) n o  2.8  10 exp
19   0.958 


p o  7  10 18   375 
3/2
  1.14 
 0.0259   exp  
 300   0.032375 
 2.41  10 3 cm 3 3
 4.99  10 3 cm
(b)
 4.7  10 17 
E c  E F   0.0259  ln 

 1.15  10
14

 0.2154 eV
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

E F  E  E g   E c  E F   1.42  0.2154 
 1.04  10 19 exp  
  0.28 

 0.0259 
 1.2046 eV  2.10  10 14 cm 3

p o  7  10 18 exp 
  1.2046 
 E c  E F  E g   E F  E 

 0.0259   1.12  0.28  0.84 eV
 4.42  10 2 cm 3    Ec  E F  
_______________________________________ n o  N c exp  
 kT 

 2.8  10 19 exp  
  0.84 

4.21  0.0259 
 375   2.30  10 5 cm 3
(a) kT   0.0259     0.032375 e _______________________________________
 300 
V

3/ 2


n o  2.8  10 19   375 
300
 exp 

0 .
 0.28 
032375 
  
3
 6.86  10 15 cm 4.23
 E F  E Fi 
E F  E  E g   E c  E F   1.12  0.28 (a) n o  n i exp  
 kT 
 0.840 eV

 1.5  10 10 exp  
 0.22 

3/ 2
 0.0259 

p o  1.04  10 19

 375 
  exp 
 0.840 


 300   .032375 
0  7.33  10 13 cm 3
 7.84  10 7 cm 3
 E Fi  E F 
p o  n i exp  
 Nc   kT 
(b) E c  E F  kT ln 

 no  
 1.5  10 10 exp  
  0.22 

 0.0259 

2.8  10 19   3.07  10 6 cm 3
  0.0259  ln  

 6.862  10
15
  E F  E Fi 
(b) n o  n i exp  
 0.2153 eV  kT 

E F  E  1.12  0.2153  0.9047 eV 

 1.8  10 6 exp    0.22 

 .0259 
0
3
 8.80  10 9 cm

p o  1.04  10 19
 exp 
  0.904668 
0.0259   E Fi  E F 
 p o  n i exp  
 kT 
 7.04  10 3 cm 3
_______________________________________ 
 1.8  10 6 exp     0.22 

 0.0259 
4.22
(a) p-type  3.68  10 2 cm 3
_______________________________________
Eg 1.12
(b) E F  E    0.28 eV
4 4 4.24
   E F  E    N 
p o  N  exp   (a) E F  E  kT ln  

 kT   p o 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
(b)
 1.04  10 19 E c  E F  1.12  0.27873  0.84127 e
  0.0259 ln 
 V
 5  10
15
 (c)
 0.1979 eV
(b) E  E F  E g   E F  E 

n o  4.3109  10 19 exp 
  0.84127 
 
c
 0.034533 
3
 1.134  10 9 cm
 1.12  0.19788  0.92212 eV
(d) Holes

(c) n o  2.8  10 exp 
19
   0.92212 
  po 
 0.0259  (e) E Fi  E F  kT ln 

 9.66  10 cm 3 3  ni 
(d) Holes
 po   5  10 15 
(e) E Fi  E F  kT ln    0.034533 ln 

  2.381 10
12

 ni 
 0.2642 eV
_______________________________________

5  10 15 
  0.0259  ln 10 

 1.5  10  4.26
 0.3294 eV (a)  
p o  7  1018 exp 
  0.25 

_______________________________________  0.0259 
 4.50  10 14 cm 3
E c  E F  1.42  0.25  1.17 eV
4.25
 400 

n o  4.7  10 17 exp     1.17 

kT   0.0259    0.034533 eV  0.0259 
 300   1.13  10 2 cm 3
3/ 2


N   1.04  10 19   400 

 300 
3
 1.601 10 19 cm
3/ 2


N c  2.8  1019   400 
300
 (b) kT  0.034533 eV
 
3/ 2
 4.3109  1019 cm 3

N   7  1018   400 


n i2  4.3109  1019 1.601 10 19    300 
3
 1.078  10 19 cm
3/ 2

 exp 
  1.12  
N c  4.7  10 17   400 

 0 .034533   300 
3
 5.6702  10 24  7.236  10 17 cm
 n i  2.381  10 12 cm 3  N 
E F  E  kT ln 

 N   po 
(a) E F  E  kT ln  

 po 
 1.078  10 19 
 1.601 1019    0.034533 ln 14 

  0.034533 ln 
  4.50  10 
 5  10 15   0.3482 eV
 0.2787 eV E c  E F  1.42  0.3482  1.072
eV
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
E F  E c kT 2
F    0. 5

n o  7.236  10 17  exp 
  1.07177 

kT kT
 0.034533  Then F1 / 2  F   1.0
 2.40  10 4 cm 3
_____________________________________ no 
2
 2.8 10 1.0
19


3
4.27  3.16  10 19 cm

(a) 
p o  1.04  1019 exp 
  0.25 
  (b) n o 
2
N c F1 / 2  F 
 0.0259  
 6.68  10 14 cm 3 
2
 4.7  10 1.017

E c  E F  1.12  0.25  0.870 

eV  5.30  1017 cm 3

n o  2.8  10 19 exp     0.870 

_______________________________________
 0.0259 
4.29
n o  7.23  10 4 cm 3
2
po  N  F1 / 2  F 
(b) kT  0.034533 eV 
3/ 2


N   1.04  10 19   400 

 300  5  10 19 
2
1.04 10  F   
19
1/ 2 F
 1.601 10 19
cm 3 
3/ 2
So F1 / 2  F   4.26

N c  2.8  1019   400 

 300  E  E F
3
We find  F  3.0 
 4.311  10 19
cm kT
 N  E  E F   3.0  0.0259   0.0777
E F  E  kT ln 
 eV
 po 
_______________________________________

 1.601 10 19  4.30
  0.034533 ln 

 6.68  10
14
 E F  E c 4kT
(a)  F   4
 0.3482 eV kT kT
Then F1 / 2  F   6.0
E c  E F  1.12  0.3482  0.7718 e 2
V no  N c F1 / 2  F 


2
 2.8 10  6.0
19


3
 1.90  10 20 cm


n o  4.311  10 19 exp 
  0.77175 

 0.034533 
 8.49  10 9 cm 3
_______________________________________ (b) n o 
2
 4.7 10  6.0
17


4.28  3.18  10 18 cm 3
2 _______________________________________
(a) n o  N c F1 / 2  F 

 E c  kT 2 , 4.31
For E F
For the electron concentration
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
n E   g c  E  f F  E 
The Boltzmann approximation applies, so
p E  

4 2m *p  3/2
   E F  E  
 
* 3/2
exp  
4 2m
3
h  kT 
n E   3
n
E  Ec
h
   E  EF   E  E    E  E  
 exp   kT exp  
kT  kT  kT 
 
Define
or
E  E
x 
n E  

4 2m n 
* 3/ 2
exp 
   Ec  E F  
Then
kT
3
kT 
h   p  x   K  x  exp  x 
To find maximum value of p E   p  x  ,
E  Ec    E  Ec  
 kT exp   set
kT  kT  dp x 
Define  0 Using the results from above,
E  Ec
dx 
x we find the maximum at
kT 1
Then E  E 
kT
2
n E   n x   K x exp  x 
_______________________________________
To find maximum n E   n x  , set
dn x   1 1 / 2 4.32
 0  K x exp  x  (a) Silicon: We have
dx  2
    Ec  E F  
n o  N c exp  
x 1 / 2   1 exp  x    kT 

We can write
Ec  E F   Ec  Ed    Ed  E F 
or
 1 
0  Kx 1 / 2 exp  x    x For
 2  E c  E d  0.045 eV and
which yields
E d  E F  3kT eV
1 E  Ec 1
x   E  E c  kT we can write
2 kT 2
For the hole concentration  
n o  2.8  10 19 exp 
  0.045
 3


p E   g   E  1  f F  E    0. 0259 

Using the Boltzmann approximation   2.8  10  exp  4.737 

19

p E  

4 2m *p  3/ 2

E  E
or
n o  2.45  10 17 cm 3
3
h We also have
   EF  E     E F  E  
 exp   p o  N  exp 
 kT  kT 
 
or Again, we can write
E F  E    E F  E a    E a  E 
For
E F  E a  3kT and
E a  E  0.045 eV
Then
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
 n i  7.334  10 11 cm 3


p o  1.04  10 19  
exp   3 
0.045 
0.0259 
p o  N a  4  10 15 cm 3

 
 1.04  10 19 exp  4.737  no 
7.334 10  11 2
 1.34  10 8
or 4  1015
cm 3
p o  9.12  10 16 cm 3

(e)
3

(b) GaAs: assume E c  E d  0.0058 eV

 
n i2  2.8  10 19 1.04  10 19   450 
300

 
Then

 
n o  4.7  10 17 exp 
  0.0058
 3
   1.12  300  
 exp  
 0.0259    0.0259  450  
  4.7  10  exp  3.224 
17
 n i  1.722  10 13 cm 3
or
n o  1.87  1016 cm 3

Assume E a  E  0.0345 eV
Then
2
 10 14 
 
p o  7  10 18 exp 
  0.0345
 3
 no 
10 14
2
 
 2

 
 1.722  10 13  2

 0.0259   
  7  10  exp  4.332 
18
 1.029  10 14 cm 3

or
po 
1.722 10  13 2
 2.88  1012
p o  9.20  10 cm 3 16
1.029  10 14

_______________________________________
cm 3
4.33 _______________________________________
Plot
_______________________________________ 4.35
(a) p o  N a  N d  4  10 15  1015
4.34  3 10 15 cm 3

(a) p o  4  15  10 15
 3  10 cm 15 3

no 
1.5 10  10 2
 7.5  10 cm 4
no 
n i2


1.8  10 6  2

 1.08  10  3 c
3  10 15 po 3  10 15
3 m 3

(b) n o  N d  3 1016 cm 3 (b) n o  N d  3 10 16 cm 3

po 
1.5 10  10 2
 7.5  10 cm 3
po 
1.8 10  6 2
 1.08  10  4 cm
3  1016 3  1016
3 3

(c) n o  p o  n i  1.5  10 10 cm 3 (c) n o  p o  n i  1.8  10 6 cm 3

(d) (d)
3 3

 
n i2  2.8  10 19 1.04  10 19   375 
  
n i2  4.7  1017 7.0  1018   375 

 300   300 

  1.12 300     1.42  300  

 exp    exp  
  0.0259  375    0.0259  375 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
 n i  7.580  10 8 cm 3 (ii) p o  N a  N d  3 10 15 cm 3

p o  N a  4  10 15 cm 3

no 
1.8 10  6 2
 1.08  10 3 cm
no 
7.580 10  8 2
 1.44  10 2
3  10 15

3
4  10 15

cm 3 (c) The result implies that there is only one

(e) minority carrier in a volume of 10 3 cm 3 .
3 _______________________________________
 
n i2  4.7  10 17 7.0  10 18   450 
300

  4.37
(a) For the donor level
  1.42  300   nd 1
 exp   
  0.0259  450   Nd 1  E  EF 
1  exp d 
 n i  3.853  10 cm 10 3 2  kT 
n o  N d  10 cm 14 3 1


po 
3.853 10  10 2
 1.48  10 7
1
1  exp
2
 0.20 

14  0.0259 
10
or
cm 3
nd
_______________________________________  8.85  10  4
Nd
4.36 (b) We have
(a) Ge: n i  2.4  10 13 cm 3 1
f F  E 
2  E  EF 
Nd  N  1  exp 
(i) n o    d   n i2 kT
2  2   
Now
2
E  E F   E  Ec    Ec  E F 
 2  10 15 

2  10 15
2
 
 2

  2.4  10  13
 2
or
  E  E F  kT  0.245

or
n o  N d  2 1015 cm 3

po 
n i2


2.4  1013  2

no 2  10 15 Then
1
f F  E 
3
 2.88  10 11 cm
(ii) p o  N a  N d  10 16  7  10 15  0.245 
1  exp 1  
3  0 .0259 
 3 10 15 cm
or
n2
no  i 

2.4  1013  2
f F  E   2.87  10 5
po 3  10 15 _______________________________________
3
 1.92  10 11 cm
4.38
(b) GaAs: n i  1.8  10 6 cm 3
(a) N a  N d  p-type
(i) n o  N d  2  10 15 cm (b) Silicon:

po 
1.8 10  6 2
 1.62  10 3
cm 3
p o  N a  N d  2.5  1013  1  10 13
or
2  10 15
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
p o  1.5  10 13 cm 3

no 
1.5 10  10 2
 5.625  10 4
Then 4  10 15

n2
no  i 
1.5  1010   2

 1.5  10 7 cm 3
po 1.5  1013 _______________________________________
cm 3
4.40
Germanium:

po 
Na  Nd  N  Nd
  a


2

 n i2 n2
no  i 
1.5  1010   2

 1.125  10 15 cm
2  2  po 2  10 5
3
2
 1.5  10 13   1.5  10 13  n o  p o  n-type
 
2
 


 2

 
 2.4  10 13  2

    _______________________________________
or
4.41
p o  3.26  1013 cm 3

Then 3


n i2  1.04  10 19 6.0  1018    250 


no 
n i2


2.4  1013  2

 1.76  1013 cm
 300 

po 3.264  10 13   0.66 
 exp  
  0.0259  250 300  
3

Gallium Arsenide:
 1.8936  10 24
p o  N a  N d  1.5  10 13 cm 3
 n i  1.376  1012 cm 3
and
n2
no  i 
1.8  10 6 
 0.216 cm 3
 2
no 
n i2 n2 1
 i  n o2  ni2
po 1.5  1013 p o 4n o 4
_______________________________________ 1
 no  ni
2
4.39
So n o  6.88  10 11 cm 3 ,
(a) N d  N a  n-type
(b) Then p o  2.75  10 12
cm 3

n o  N d  N a  2  1015  1.2  10 15 Na  N 
2

3
po    a   n i2
 8  10 14 cm 2  2 
2
 Na 
po 
n 2

i 1.5  10  10 2
  2.81 10 5 cm
 2.752  10 12 
 2


no 8  10 14 2
 Na 
3     1.8936  10 24
 2 


7.5735  10 24  2.752  1012 N a     Na 

 2 
(c) p o   N a  N a   N d 2
 Na 
    1.8936  10 24
4  10 15
 N a  1.2  10 15
 2  10 15  2 
so that N a  2.064  10 12 cm 3
 N a  4.8  10 cm 15 3
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
So N a  3.5  10 16 cm 3
4.42
Plot
no 
1.5  10  10 2

 4.5  10 3 cm
_______________________________________
5  10 16

3
4.43
Plot _______________________________________
_______________________________________

4.44
Plot
_______________________________________

4.45
2
N  Na  N  Na 
no  d   d   n i2
2  2  4.47
(a) p o  n i  n-type
2  10 14
 1.2  10 14
1.1 1014 
2 n i2 n2
(b) p o   no  i
no po
2
 2  10 14  1.2  10 14  no
    n i2
 
 2 

1.5 10  10 2
 1.125  10 16 cm 3
2  10 4

1.110 14
 4  10 13  2

 4  1013  2
 n i2  electrons are majority carriers
4.9  10 27
 1.6  10 27
n 2
i p o  2  10 4 cm 3
so n i  5.74  10 13 cm 3  holes are minority carriers
n i2 3.3  10 27 (c) n o  Nd  Na
po    3  1013 cm 1.125  1016  N d  7  10 15
no 1.1 10 14

3 so N d  1.825  1016 cm 3
_______________________________________ _______________________________________

4.46 4.48
(a) N a  N d  p-type  po 
Majority carriers are holes
E Fi  E F  kT ln 

 ni 
For Germanium
p o  N a  N d  3  10 16
 1.5  10 16
T (K) kT (eV) n i (cm 3 )
 1.5  10 cm 3 16
200 0.01727 2.16  10 10
Minority carriers are electrons
400 0.03453 8.60  10 14
n2
no  i 

1.5  10 10  2

 1.5  10 4
600 0.0518 3.82  10 16
po 1.5  10 16 2
cm 3 Na  N 
po    a   n i2 and
(b) Boron atoms must be added 2  2 
p o  N a  N a  N d N a  10 15 cm
3

5  10  N a  3  10  1.5  10  E Fi  E F  (eV)
16 16 16
T (K) p o (cm 3 )
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
200 1.0  10 15 0.1855
400 1.49  10 15 0.01898   1.12 
 exp  
600
3.87  10 16
0.000674   0.0259  T 300  
3

_______________________________________ 
5.25  10 28  2.912  10 38   T 
300

 
4.49
  12972.973 
 Nc   exp  
(a) E c  E F  kT ln 
  T 
 Nd  By trial and error, T  536.5 K
 2.8  10 19  (b) At T  300 K,
  0.0259  ln 

 Nd   Nc 
E c  E F  kT ln 

For 10 14 cm 3 , E c  E F  0.3249 eV  no 
10 15 cm 3 , E c  E F  0.2652 eV
, E c  E F  0.2056 eV  2.8  1019 
E c  E F   0.0259  ln
3
10 16 cm 
10 15 
10 17 cm 3 , E c  E F  0.1459 eV  
 0.2652 eV
 Nd  At T  536.5 K,
(b) E F  E Fi  kT ln 

 ni   536.5 
kT   0.0259     0.046318 eV
 300 
 Nd 
  0.0259 ln  3/ 2

 1.5  10
10
 
N c  2.8  10 19   536.5 

 300 
For 10 14
cm 3 , E F  E Fi  0.2280 eV  6.696  1019 cm 3

10 15
cm 3 , E F  E Fi  0.2877
eV
10 16 cm 3 , E F  E Fi  0.3473
eV  Nc 
E c  E F  kT ln 

10 17
cm 3 , E F  E Fi  0.4070  no 
eV
_______________________________________
 6.696  1019 
E c  E F   0.046318 ln 

 1.05  10
15
4.50 
Nd  N 
2
 0.5124 eV
(a) n o    d   n i2
2  2  
then  E c  E F  0.2472 eV
n o  1.05 N d  1.05  10 cm 15 3 (c) Closer to the intrinsic energy level.
_______________________________________
1.05 10 15
 0.5  10 15  2

4.51

 0.5  10 
15 2
 n i2 E Fi  E F  kT ln
 po 


so n i2  5.25  10 28  ni 
Now At T  200 K, kT  0.017267 eV
T  400 K, kT  0.034533 eV
3 T  600 K, kT  0.0518 eV
 
n i2  2.8  10 19 1.04  10 19   T 

 300 
At T  200 K,
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
For N a  1014 cm
3

  
3 ,
200 
n i2  2.8  10 19 1.04  10 19  
 300  E Fi  E F  0.4619 eV
 1.12  N a  1015 cm 3 ,
 exp  
 0.017267  E Fi  E F  0.5215 eV
 n i  7.638  10 4 cm 3 16
N a  10 cm 3 ,
At T  400 K,
E Fi  E F  0.5811 eV
3
N a  1017 cm 3 ,
n 2
i 
 2.8  10 19
1.04 10  19  400 
 
E Fi  E F  0.6408 eV
 300 
  1.12  (b)
 exp 
 0 .034533   N   7.0  1018 
E F  E  kT ln    0.0259  ln  
  
 n i  2.381 10 cm  Na Na
12 3
  
At T  600 K, For N a  10 14
cm 3 ,
3
E F  E  0.2889 eV
n 2
i 
 2.8  10 19
1.04 10  19  600 
  N a  1015 cm 3 ,
 300 
E F  E  0.2293 eV
  1.12 
 exp   16
 0.0518  N a  10 cm 3 ,
 n i  9.740  10 14 cm 3 E F  E  0.1697 eV
At T  200 K and T  400 K, N a  1017 cm 3 ,
p o  N a  310 15 cm 3 E F  E  0.1100 eV
At T  600 K, _______________________________________
2
Na  N  4.53
po    a   n i2
2  2   m *p 
3
(a) E Fi  E midgap  kT ln 
4  m n* 
2  
 3  10 15 

3  10 15
2
 
 2

 
 9.740  10 14  2
3
  0.0259  ln 10 
 
4
3
 3.288  10 15
cm or
E Fi  E midgap  0.0447 eV
Then, T  200 K, E Fi  E F  0.4212 (b) Impurity atoms to be added so
eV E midgap  E F  0.45 eV
T  400 K, E Fi  E F  0.2465 (i) p-type, so add acceptor atoms
eV (ii)
T  600 K, E Fi  E F  0.0630 E Fi  E F  0.0447  0.45  0.4947 eV
eV Then
_______________________________________  E  EF 
p o  n i exp Fi 
4.52  kT 
(a)
 
 10 5 exp
 0.4947 

 0.0259 
 Na   Na 
E Fi  E F  kT ln    0.0259  ln  or

 1.8  10 
6
 ni  p o  N a  1.97  10 13 cm 3
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________


N d  4.7  1017 exp     0.13346 

 0.0259 
4.54
   Ec  E F  
3
 2.718  10 15 cm
n o  N d  N a  N c exp    N d  10 15
 kT 
so  N d  1.718  10 15 cm 3
Additional
donor atoms

N d  5  10 15  2.8  10 19 exp
  0.215 
  _______________________________________
 0.0259 
 5  10 15  6.95  10 15 4.56
or  N 
N d  1.2  1016 cm 3 (a) E Fi  E F  kT ln 

 N a 
_______________________________________
 1.04  1019 
4.55   0.0259  ln 

 2  10
16
(a) Silicon 
 0.1620 eV
 Nc 
(i) E c  E F  kT ln 

 Nd 

 2.8  1019   Nc 
  0.0259  ln   0.2188 (b) E F  E Fi  kT ln 

  N 
 6  10
15
 d

eV
(ii)  2.8  1019 
E c  E F  0.2188  0.0259  0.1929   0.0259  ln   0.1876 e

 2  10
16

eV
V
   Ec  E F   (c) For part (a);
N d  N c exp  
 kT  p o  2  10 16 cm 3

n2
no  i 
1.5  1010   2


 2.8  1019 exp     0.1929 
 po 2  10 16
 0.0259  3
 1.125  10 4 cm
N d  1.631 10 16 cm 3
For part (b):
 N d  6  10 15
n o  2  1016 cm 3

 N d  1.031 1016 cm 3 n2
po  i 
1.5  1010   2

Additional no 2  10 16
donor atoms
(b) GaAs  1.125  10 4 cm 3
 4.7  1017  _______________________________________
E
(i) c  E F   0 . 0259  ln 



 10 15  4.57
 0.15936 eV  E F  E Fi 
(ii) n o  n i exp  
 kT 
E c  E F  0.15936  0.0259  0.13346
eV 
 1.8  10 6 exp  
 0.55 

 0.0259 
 3.0  1015 cm 3
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
Add additional acceptor impurities
no  N d  N a  7.0  10 18 
  0.0259 ln   0.2009 e

3  10 15
 7  10 15
 Na  3  10
15

 N a  4  10 cm 15 3 V
_______________________________________ (b)
 7.0  10 18 
4.58
E F  E   0.0259  ln 4


 1.08  10 
 po   1.360 eV
(a) E Fi  E F  kT ln 

 ni   7.0  10 18 
(c) E F  E   0.0259  ln 

 1.8  10
6


3  10 15

  0.0259  ln    0.3161 e

 0.7508 eV
 1.5  10
10
  375 
V (d) E F  E   0.0259   
 300 
 no 
(b) E F  E Fi  kT ln 
 ni 

 ln 
 
 7.0  10 18  375 300  3 / 2 

 4  10 15 
 3  10 16   0.2526 eV
  0.0259  ln   0.3758 e

 1.5  10
10
  450 
(e) E F  E   0.0259   
V  300 
(c) E F  E Fi

 ln 
 
 7.0  1018  450 300  3 / 2 

 1.48  10 7 
 1.068 eV
_______________________________________

 po 
(d) E Fi  E F  kT ln 

 ni 

 375   4  10 15 
  0.0259    ln 

 7.334  10
11
 300  
 0.2786 eV
 n 
(e) E F  E Fi  kT ln 
o

 ni  4.60
n-type

 1.029  10 14   no 
 450  E F  E Fi  kT ln 
  0.0259    ln 
 
 300   1.722  10
13
  ni 
 0.06945 eV
_______________________________________  1.125  10 16 
  0.0259 ln   0.3504 e
 

 1.5  10 10
4.59
V
 N  ______________________________________
(a) E F  E  kT ln  


 po 
4.61
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
2 donor
N  N 
p o  a   a   n i2
2  2  N d   0.05 7  10 15  3.5  10 14 cm  
5  10 15 3
5.08  10 15

2 Replace As atoms  Silicon acts as an
 5  10 15

2 acceptor
  
  n i2
 2 
 
N a   0.95 7  10 15  6.65  10 15 cm
5.08 10 15
 2.5  10 15
 2
3

(b) N a  N d  p-type

 2.5  10 15  2
 n i2 (c)
6.6564  10 30  6.25  10 30  n i2 p o  N a  N d  6.65  10 15  3.5  10 14
 n i2  4.064  10 29  6.3  10 15 cm 3

  Eg 
ni2  N c N  exp 
 kT 

no 
n i2


1.8  10 6  2

 5.14  10  4 c
po 6.3  10 15
 350 
kT   0.0259     0.030217 eV m 3
 300 
 po 
2 (d) E Fi  E F  kT ln 

N c  1.2  10 19
  350 
   1.633  10 19
c  ni 
 300 
m 3
 6.3  10 15 
  0.0259  ln   0.5692 e

 1.8  10
6
2 

N   1.8  10 19   350 
  2.45  10 19 cm V
 300  _______________________________________
3

Now


4.064  10 29  1.633  10 19 2.45  10 19  
  Eg 
 exp  
 0.030217 
So

E g   0.030217  ln 

 1.633  10 19 2.45  1019   

 4.064  10 29 
 E g  0.6257 eV
_______________________________________

4.62
(a) Replace Ga atoms  Silicon acts as a