Intelligent Technology. Better Future.

NTD360N65S3H
Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 10
A, 360 mΩ, DPAK

Product Overview
For complete documentation, see the data sheet.
SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to
minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III
FAST MOSFET series helps minimize various power systems and improve system efficiency.

Features Benefits
• 700 V @ TJ = 150°C • Higher system reliability at low temperature operation
• Ultra Low Gate Charge (Typ. Qg = 17.5 nC) • Low switching loss
• Low Effective Output Capacitance (Typ. Coss(eff.) = • Low switching loss
180 pF)
• Fast switching performance with robust body diode • Low switching loss and higher system reliability
• 100% Avalanche Tested
• RoHS Compliant
• Typ. RDS(on) = 296 m Ω
• Internal Gate Resistance: 0.9 Ω

Applications End Products

• Computing • Notebook / Desktop computer / Game console
• Consumer • Telecom / Server
• Industrial • LCD / LED TV
• LED Lighting / Ballast
• Adapter

Part Electrical Specifications

RDS( RDS(
on) on)
RDS( Qg
Max Max on) Qg
Max Typ
@ @ Typ Pac
Cha Con V(BR) VGS(t @ @
VGS ID PD VGS VGS @ Ciss kag
Pricing Complian Stat nnel figu DSS h) VGS VGS
Product Min Max Max Max Max = = VGS Typ e
($/Unit) ce us Pola ratio = 10 =
(V) (V) (V) (A) (W) 2.5 4.5 = 10 (pF) Typ
rity n V 4.5
V V V e
(mΩ V
(mΩ (mΩ (nC)
) (nC)
) )

DPA
K-3
N-
NTD360N65S3 Acti Sing /
0.6905 Cha 650 30 4 10 83 360 17.5 916
H ve le TO-
nnel 252
-3

NTD360N65S3H Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 10 A, 360 mΩ, DPAK pg 1 / 1