MICROWAVE POWER GaAs FET

TIM1314-30L
FEATURES
･BROAD BAND INTERNALLY MATCHED FET
･HIGH POWER
P1dB= 45.0dBm at 13.75GHz to 14.5GHz
･HIGH GAIN
G1dB= 5.0dB at 13.75GHz to 14.5GHz
･LOW INTERMODULATION DISTORTION
IM3= -25dBc(Min.) at Pout= 38dBm (Single Carrier Level)
･HERMETICALLY SEALED PACKAGE

RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )

CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Output Power at 1dB
Gain Compression Point P1dB dBm 44.0 45.0 
Power Gain at 1dB
Gain Compression Point G1dB dB 4.0 5.0 
VDS= 10V
IDSset= 7.0A
Drain Current IDS1 A  10.0 11.0
f= 13.75 to 14.5GHz
Gain Flatness G dB   0.8

Power Added Efficiency add %  22 

3rd Order Intermodulation Two-Tone Test
Distortion IM3 dBc -25  
Po= 38dBm, f= 5MHz
Drain Current IDS2 (Single Carrier Level) A 9.0 10.1

(VDS  IDS  Pin  P1dB)
Channel Temperature Rise Tch  Rth(c-c) °C   100

Recommended Gate Resistance (Rg): 10 

ELECTRICAL CHARACTERISTICS ( Ta= 25°C )

CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
VDS= 3V
Transconductance gm IDS= 9.6A S  5.5 
VDS= 3V
Pinch-off Voltage VGSoff IDS= 290mA V -0.7 -2.0 -4.5
VDS= 3V
Saturated Drain Current IDSS VGS= 0V A  20.0 

Gate-Source Breakdown Voltage VGSO IGS= -290A V -5  

Thermal Resistance Rth(c-c) Channel to Case °C/W  1.0 1.1

 The information contained herein is presented as guidance for product use. No responsibility is assumed by Toshiba
Infrastructure Systems & Solutions Corporation (hereinafter, referred to as “TISS”) for any infringement of patents or
any other intellectual property rights of third parties that may result from the use of product. No license to any intellectual
property right is granted by this document. The information contained herein is subject to change without prior notice.
It is advisable to contact TISS before proceeding with design of equipment incorporating this product.

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 MICROWAVE POWER GaAs FET
TIM1314-30L
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS SYMBOL UNIT RATING

Drain-Source Voltage VDS V 15

Gate-Source Voltage VGS V -5

Drain Current IDS A 20

Total Power Dissipation (Tc= 25°C) PT W 136

Channel Temperature Tch °C 175

Storage Tstg °C -65 to +175

PACKAGE OUTLINE ( 7-AA03B )

Unit in mm

 Gate
 Source
 Drain

HANDLING PRECAUTIONS FOR PACKAGE MODEL

Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C or 3 seconds at
350°C

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 MICROWAVE POWER GaAs FET
TIM1314-30L
TYPICAL RF PERFORMANCE
･Pout , Gain , PAE , IDS vs. Pin

VDS= 10 V, IDSset= 7.0 A, f= 13.75, 14.1, 14.5 GHz, Ta= +25 ℃

Pout vs Pin Gain vs Pin

VDS=10V,IDS=7.0Aset VDS=10V,IDS=7.0Aset
54 24
13.75GHz 13.75GHz
50 14.1GHz 14.1GHz
20 14.5GHz
14.5GHz
46
16
42
Pout (dBm)

Gain (dB)
12
38
8
34

30 4

26 0
18 22 26 30 34 38 42 46 18 22 26 30 34 38 42 46
Pin (dBm) Pin (dBm)

PAE vs Pin
VDS=10V,IDS=7.0Aset
60
13.75GHz
14.1GHz
50 14.5GHz

40
PAE (%)

30

20

10

0
18 22 26 30 34 38 42 46
Pin (dBm)

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 MICROWAVE POWER GaAs FET
TIM1314-30L
･IM3, IM5 vs. Pout

VDS= 10 V, IDSset= 7.0 A, f= 13.75, 14.1, 14.5 GHz, Δf= 5 MHz , Ta= +25 ℃

IM3 vs Pout IM5 vs Pout

VDS=10V, IDS=7.0A VDS=10V, IDS=7.0A
-20 -20

-30 -30

-40 -40
IM3 (dBc)

IM5 (dBc)
-50 -50

-60 13.75GHz -60 13.75GHz

14.1GHz 14.1GHz
14.5GHz 14.5GHz
-70 -70
25 30 35 40 45 50 25 30 35 40 45 50
Pout (dBm) @S.C.L Pout (dBm) @S.C.L

･IM3, IM5 vs. IDSset

VDS= 10 V, IDSset= 5.0, 6.0, 7.0 A, f= 14.1 GHz, Δf= 5 MHz , Ta= +25 ℃

IM3 vs Pout IM5 vs Pout

VDS=10V, f=14.1GHz VDS=10V, f=14.1GHz
-20 -20
5.0Aset
6.0Aset
-30 -30 7.0Aset

-40 -40
IM3 (dBc)

IM5 (dBc)

-50 -50

-60 5.0Aset -60

6.0Aset
7.0Aset
-70 -70
25 30 35 40 45 50 25 30 35 40 45 50
Pout (dBm) @S.C.L Pout (dBm) @S.C.L

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 MICROWAVE POWER GaAs FET
TIM1314-30L
･Pout , Gain , PAE , IDS vs. Pin vs. IDSset

VDS= 10 V, IDSset= 5.0, 6.0, 7.0 A, f= 14.1 GHz, Ta= +25 ℃

Pout vs Pin Gain vs Pin

VDS=10V,f=14.1GHz VDS=10V,f=14.1GHz
54 24
5.0Aset 5.0Aset
50 6.0Aset 6.0Aset
20 7.0Aset
7.0Aset
46
16
42
Pout (dBm)

Gain (dB)
12
38
8
34

30 4

26 0
18 22 26 30 34 38 42 46 18 22 26 30 34 38 42 46
Pin (dBm) Pin (dBm)

PAE vs Pin IDS vs Pin

VDS=10V,f=14.1GHz VDS=10V,f=14.1GHz
60 18
5.0Aset 5.0Aset
6.0Aset 16 6.0Aset
50 7.0Aset 7.0Aset
14
40
12
IDS (A)
PAE (%)

30
10
20
8
10 6

0 4
18 22 26 30 34 38 42 46 18 22 26 30 34 38 42 46
Pin (dBm) Pin (dBm)

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 MICROWAVE POWER GaAs FET
TIM1314-30L
･S-Parameters

VDS= 10 V, IDSset= 7.0 A, f= 12.0 to 16.0 GHz, Ta= +25 ℃

S11, S22 S21, S12

VDS=10V, IDS=7.0A VDS=10V, IDS=7.0A
0 20
S21
-5 10 S12

-10 0
S21, S12(dB)
S11, S22(dB)

-15 -10

-20 -20
S11
-25 S22 -30

-30 -40
12 13 14 15 16 12 13 14 15 16
f(GHz) f(GHz)

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 MICROWAVE POWER GaAs FET
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RESTRICTIONS ON PRODUCT USE

･All presented data are typical curves/values and for reference only as design guidance. Devices are not necessarily
guaranteed at these curves and values.
･ TISS, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the
information in this document, and related hardware, software and systems (collectively “Product”) without notice.
･This document and any information herein may not be reproduced without prior written permission from TOSHIBA.
Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without
alteration/omission.
･Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail.
Customers are responsible for complying with safety standards and for providing adequate designs and safeguards
for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure
of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption.
Before creating and producing designs and using, customers must also refer to and comply with (a) the latest
versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the
data sheets and application notes for Product and the precautions and conditions set forth therein and (b) the
instructions for the application that Product will be used with or for, Customers are solely responsible for all aspects
of their own product design or applications, including but not limited to (a) determining the appropriateness of the
use of this Product in such design or applications; (b) evaluating and determining the applicability of any information
contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA
ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
･Product is intended for use in communications equipment (including Rader) on the ground Product is neither
Intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability, and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property
damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used
in nuclear facilities, equipment used in the aircraft and space equipment, medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control
combustion or explosions, safety devises, elevators and escalators, devices related to electric power, and
equipment used in finance-related fields. If you are considering using the Product in such situation, please contact
us in advance.
･Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
･Product shell not be used for or incorporated into any products or systems whose manufacture, use, or sale is
prohibited under any applicable laws or regulations.
･The information contained herein is presented only as guidance for Product use. No responsibility is assumed by
TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from
the use of Product. No license to any intellectual property right is granted by this document, whether express or
implied, by estoppel or otherwise.

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