ABES Engineering College, Ghaziabad

Department of Applied Science & Humanities

Session: 2020-21 Semester: II Course Code: KEC-201T

Course Name: Emerging Domain in Electronics Engineering

Assignment 1

Date of Assignment: Date of submission:

S.No. KL, CO Question Marks

1 K2, CO1 Draw the effect of temperature on VI characteristics of PN junction diode.
The reverse saturation current of a Si diode at 40 degree Celsius is 10nA.
2 K3, CO1 Calculate the diode current at the given temperature when the voltage
across diode is 0.68 V.
Draw the output waveform for the Fig.:

3 K3, CO1

Draw the O/P waveform:

4 K3, CO1

Draw the output voltage and calculate its RMS and DC values of the
network given below.

5 K3, CO1
 Determine Vo & ID.

6 K3, CO1

Determine I, V1, V2, and Vo

7 K3, CO1

Determine Vo, I1, ID1, and ID2 for the parallel diode configuration

8 K3, CO1

Determine the currents I1, I2, and ID2.

9 K3, CO1

With the help of neat diagram explain the working of voltage doubler
10 K3,CO1
CO-Course Outcomes mapped with respective question
KL- Bloom’s Knowledge Level (K1,K2,K3,K4,K5,K6)
K1 – RememberK2 – UnderstandK3 – ApplyK4 – AnalyzeK5 – EvaluateK6– Create