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B.

TECH IN
ELECTRICAL & ELECTRONICS ENGINEERING
MASTER FILE
FOR

HIGH VOLTAGE ENGINEERING


SUBJECT CODE: _________
SEMESTER –6
REVISION NO - 0
RELEASED ON – 01.02.22

PREPARED BY
KUMARESH PAL
(Ph.D. - N.I.T., Jamshedpur, M.TECH – Power System & Control
Engineering)
Assistant Professor
E.E.E. Dept.
Syllabus & Infrastructure
Prepared by: Mr. Kumaresh Pal

The course should enable the students to understand about the

The course has been designed to introduce

Basic Electrical & Electronics Engineering,

SL NO TITLE OF BOOK AUTHOR PUBLICATION

1.

2.
3.

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SYLLABUS

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MODULE I

Content

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MODULE II

Content

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The disadvantages of CVT are

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In the ease of ac peak value and dc voltage measurements, the applied voltage is uniformly
increased until sparkover occurs in the gap. Generally, a mean of about five breakdown
values is taken when they agree to within ±3%.
In the case of impulse voltages, to obtain 50% flashover voltage, two voltage limits, differing
by not more than 2% are set such that on application of lower limit value either 2 or 4
flashovers take place and on application of upper limit value 8 or 6 flashovers take place
respectively. The mean of these two limits is taken as 50% flashover voltage. In any case, a
preliminary sparkover voltage measurement is to be made before actual measurements are
made.

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the primary dc current and hence will give the measurement of dc current. Schematic
diagram of a dc current transformer.

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Measurement of High Value DC Current by


Hall Generator
What is Hall effect?

If an electric current flows through a metal plate perpendicularly located to the on


magnetic field Lorenz - forces will deflect the electrons in the metal structure in a
direction normal to the direction of both the current and the magnetic field. This is known
as "Hall effect".

What is "Hall Voltage”?

The charge displacement generates an e.m.f in the normal direction. This e.m.f. is known
as Hall EMF or "Hall voltage".

Magnitude of Hall voltage (VH):


VH is directly proportional to current i.
Therefore VH ∝ I=i.
VH is directly proportional to flux density B.
Therefore VH ∝ B.
VH is inversely proportional to plate thickness.
Therefore VH ∝ 1/d.
Hence Hall Voltage VH ∝ Bi / d
∴ VH = R . Bi / d
Where R is the constant of proportionality and is called as Hall coefficient
∴ VH = R . Bi / d

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Hall co-efficient R has a low value for metals but greater value for Semiconducting
material.

Circuit arrangement explaining Hall effect :

Actual set up of Hall generator, it consist of

1. Hall element strip


2. Battery source with protective resistance
3. Iron core rectangular magnetic circuit
4. Path of current (I)

 The current carrying conductor is surrounded by a rectangular core magnetic circuit


shown above.
 The Hall-element strip is located in the air gap of the magnetic core across the
thickness of which a Hall voltage VH produced.
 Hall voltage VH measured by a low range voltmeter.
 The magnetic field intensity H = 1 / δ is produced in a small-air gap in the core
 A small constant current (I) is allowed to pass through the clement by the battery
source E.
 The voltage VH developed across the Hall element in the normal direction is
proportional to the current I.
 The Hall element material is to be so selected that Hall co-efficient R is suitable for
the set.
 Hall generator is used for measuring high valve D.C. currents as well as
measuring "Unidirectional ac." and also impulse currents. For such measurements
the Hall generator in modified form with compensating circuit is used.

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MODULE V

Content

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MODULE IV

Content

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MODULE III

Content

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INDUCTIVELY COUPLED RATIO ARM BRIDGE

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