SKM 145GB128DN

Absolute Maximum Ratings   )- ." 

      '
Symbol Conditions Values Units
IGBT
 /)** 
%   )- 12*3 . /4* 1/5-3 &
%67   )- 12*3 ."   /  52* 1)8*3 &
9 :)* 
 ;" 13 <6&%<= >  ?* @@@ A/-* 1/)-3 .
 &" / 
@ ?*** 
Inverse diode
SEMITRANSTM 2N %B   %   )- 12*3 . /5* 14*3 &
%B67   )- 12*3 ."   /  52* 1)8*3 &
%B 7   /* C 
@C ;  /-* . //** &
SPT IGBT Module
Freewheeling diode
%B   %   )- 12*3 . /5* 14*3 &
%B67   )- 12*3 ."   /  5-* 1)#*3 &
SKM 145GB128DN %B 7   /* C 
@C ;  /-* . //** &
SKM 145GAL128DN
Characteristics   )- ." 
      '
Preliminary Data Symbol Conditions min. typ. max. Units
IGBT
913 9  " %  ? & ?"- -"- #"- 
Features % 9  *"    " ;  )- 1/)-3 . *"/ *"5 &
1<3 ;  )- 1/)-3 . / 1*"43 /"/- 1/"*-3 
 
   9  /- " ;  )- 1/)-3 . 4 1/)3 /) 1/-3 D
   
 13 %  /** &" 9  /- "    /"4 1)"/3 )"5- 1)"--3 
 

        
'  
 
'
 4
B
   9  *"   )- "   / 7, /
B
 

  /
B
    !"  
E )-


  # $ %
6FAF  @"  
  )- 1/)-3 . *"8- 1/3 D
Typical Applications '1
3   #** " %  /** & /4*

 69
 69  4 D" ;  /)- . -*

 & 
  '  '13 9  : /-  -4*

 (  -*

  
  '      
13 //"- 14"-3 G
)*+,
Inverse diode
B   %B  /** &C 9  * C ;  )- 1/)-3 . ) 1/"23 )"- 
1<3 ;  )- 1/)-3 . /"/ /"? 
 ;  )- 1/)-3 . 4 /5 D
%667 %B  /** &C ;  /)- 1 3 . /5* &
H 'I'  5-** &IJ /? J
 9  *  ?"2 G
FWD
B   %B  /** &C 9  * " ;  )- 1/)-3 . )"/ 1/"23 )"- 
1<3 ;  )- 1/)-3 . /"/ /"? 
 ;  )- 1/)-3 . 4 /5 D
%667 %B  /** &C ;  )- 1/)- 3 . /5* &
H 'I'  * &IJ /? J
 9   ?"2 G
Thermal characteristics
61;3   %9K *"/#- LIM
61;3N   %
 N' *"5# LIM
613   ' *"*- LIM
Mechanical data
7   
+ 7# 5 - =
7   
 7- )"- - =
 /#* 
GB GAL

1 23-02-2004 RAA © by SEMIKRON

SKM 145GB128DN

Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC)

Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)

Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic

2 23-02-2004 RAA © by SEMIKRON

SKM 145GB128DN

Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG

Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD
Zthp(j-c) = f (tp); D = tp/tc = tp*f Zthp(j-c) = f (tp); D = tp/tc = tp*f

Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current

3 23-02-2004 RAA © by SEMIKRON

SKM 145GB128DN

Fig. 13 Typ. CAL diode recovered charge

UL Recognized Dimensions in mm
File no. E 63 532

 N 45 9K

 N4? 9&E

 N 45

This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.

This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.

4 23-02-2004 RAA © by SEMIKRON