University of Mumbai

Examination 2020

Question Bank
Examination: Mid Sem –I (Crystallography and Semiconductor Physics)
First Year Semester I
Course Code: FEC102 and Course Name: Engineering Physics - I
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All the Questions are compulsory and carry equal Marks .
Q1. Smallest repeatable entity of a crystal structure is known as

Option A: Crystal
Option B: Lattice
Option C: Unit cell
Option D: Miller indices

Q2. Crystal acts as three dimensional grating for X-rays as:

Option A: Crystal is easy to handle
Option B: Crystal is readily available
Option C: The distance between the neighboring atoms in a crystal is of the order of λ of X-
rays
Option D: The distance between the neighboring atoms in a crystal is very less than the λ of
X-rays

Q3. Fermi level in extrinsic semiconductor does not depend on

Option A: Temperature
Option B: Impurity concentration
Option C: Type of the extrinsic semiconductor
Option D: Conductivity

Q4. The electrical resistance of few materials drops to zero below a certain
temperature. These materials are called ____________.
Option A: Semiconductor
Option B: Superconductor
Option C: Conductor
Option D: Insulator

Q5. Mobility is defined as -

Option A: electric field per drift velocity
Option B: drift velocity per electric field
Option C: conductivity per electric field
Option D: Resistivity per electric field

Q6. Fermi level lies in the ________ of the forbidden energy gap in an intrinsic
semiconductor.
Option A: Bottom
Option B: Middle
Option C: Above
Option D: Overlaps

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Q7. In an N-type semiconductor at normal temperature, the donor level is just

________ the bottom of conduction band.
Option A: Below
Option B: Above
Option C: Matches
Option D: Unpredictable

Q8. Miller Indices are

Option A: Reciprocals of intercepts of an angle on co-ordinate axis
Option B: Reciprocals of intercepts of a plane on co-ordinate axis
Option C: Reciprocals of intercepts of a line on co-ordinate axis
Option D: Intercepts of a plane on co-ordinate axis

Q9. Find the interplaner spacing between family of planes ( 1 1 1 ) in a crystal of

lattice constant 3Å.
Option A: 2.864 Å
Option B: 5.196 Å
Option C: 1.016 Å
Option D: 1.732 Å

Q11. Find the interplaner spacing of (2 2 0) plane for lead with an atomic radius of
1.746 Å. Lead has a face centered cubic structure.
Option A: 1.52 Å
Option B: 1.47 Å
Option C: 1.61 Å
Option D: 1.74 Å

Q12. Atomic packing factor is______________

Option A: Distance between two adjacent atoms
Option B: Projected area fraction of atoms on a plane
Option C: Volume fraction of atoms in cell
Option D: No of atoms per unit cell

Q13. The probability of occupancy of electrons above Fermi level at 0 K is

Option A: 0
Option B: 0.25
Option C: 0.5
Option D: 1.0

Q14. A solar cell works on the principle of

Option A: photoelectric effect
Option B: photovoltaic effect
Option C: Photoluminescence
Option D: photo-combustion

Q15. For an intrinsic semiconductor at 0 K, the probability of finding an electron in

conduction band is

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Option A: 0
Option B: 0.5
Option C: Cannot be defined
Option D: Less than 1

Q16. Find the interplanar spacing between family of planes (111) in a crystal of lattice
constant 3Aº.
Option A: 1.890Aº
Option B: 1.732Aº
Option C: 2.10Aº
Option D: 2.90Aº

Q17. A device that directly converts the light energy into electrical energy.
Option A: Solar cell
Option B: LED
Option C: Transformer
Option D: Diode

Q18. The atomic radius of simple cubic unit cell is

Option A: A
Option B: a/2
Option C: a√3/4
Option D: a√2/4

Q19. Iron crystallises in BCC structure. Calculate the lattice constant of iron if atomic
weight of iron is 55.85, density of iron is 7860 kg/m3 (Avagadro’s number = 6.02
x 10^26)
Option A: a= 2.868 A.U.
Option B: a= 4.868 A.U.
Option C: a=5.868 A.U.
Option D: a= 1.868 A.U.

Q 20. Which of the following is example of FCC diatomic structure?

Option A: Iron
Option B: Copper
Option C: Bismuth
Option D: Diamond

Q21. What is the distance between planes with Miller indices (100) of Aluminium if
it’s lattice constant is 4.04 A.U.
Option A: dhkl = 2.02 A.U.
Option B: dhkl = 2.857 A.U.
Option C: dhkl = 2.332 A.U.
Option D: dhkl = 4.04 A.U.

Q22. As the impurity concentration of n type semiconductor increases the Fermi level--
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Option A: first shifts towards the conduction band & then towards valence band.
Option B: first shifts towards the valence band & then towards conduction band.
Option C: shifts towards the valence band
Option D: shifts towards the conduction band

Q23. S.I. unit of mobility is--------

Option A: m2/V-sec
Option B: cm2/V-sec
Option C: ohm-m
Option D: mho/m

Q24. For silicon, the energy band gap in electron volt is--------
Option A: 0.67
Option B: 1.36
Option C: 1.1
Option D: 1

Descriptive Questions—
Q.1) State and explain Bragg’s law.Give its applications?
Q.2) Derive the expression for interplaner spacing?
Q.3) Describe the construction and working of Bragg’s X-ray spectrometer to determine crystal
structure?
Q.4) Show that Fermi level in intrinsic semiconductor lies in the middle of forbidden band.
Q.5) State and explain Hall Effect? Draw the diagram of Hall Effect. Give its applications.

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