1N-SS254

HIGH-SPEED SWITCHING DIODE

Max. 0.45
Features
• Ultra-high speed Max. 1.9
Min. 27.5

• High withstand voltage

Black
Cathode Band
• Low leakage and high voltage Black
Part No.
XXX Max. 2.9

Min. 27.5

Glass Case DO-34

Dimensions in mm

Absolute Maximum Ratings (Ta = 25 OC)

Parameter Symbol Value Unit
Peak Reverse Voltage VRM 40 V
Reverse Voltage VR 35 V
Average Rectified Current IO 110 mA
Peak Forward Current IFM 300 mA
Non-Repetitive Peak Forward Surge Current (t = 1 s) IFSM 400 mA
Junction Temperature Tj 175 O
C
Storage Temperature Range TS - 65 to + 175 O
C

Characteristics at Ta = 25 OC
Parameter Symbol Max. Unit
Forward Voltage VF 1.2 V
at IF = 100 mA
Reverse Current IR 0.5 μA
at VR = 35 V
Capacitance CT 3 pF
at VR = 0.5 V, f = 1 MHz
Reverse Recovery Time trr 4 ns
at IF = 10 mA, VR = 6 V

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/06/2007