1N-SS119

SILICON EPITAXIAL PLANAR DIODE

for High Speed Switching
Max. 0.45

Min. 27.5
Max. 1.9
Features
• Low capacitance Black
Cathode Band

• Short reverse recovery time Black

Part No.
XXX Max. 2.9

Min. 27.5

Glass Case DO-34

Dimensions in mm

Absolute Maximum Ratings (Ta = 25 OC)

Parameter Symbol Value Unit
Peak Reverse Voltage VRM 35 V
Reverse Voltage VR 30 V
Average Rectified Current IO 150 mA
Peak Forward Current IFM 450 mA
Non-Repetitive Peak Forward Surge Current (t = 1 s) IFSM 1 A
Power Dissipation Pd 250 mW
Junction Temperature Tj 175 O
C
Storage Temperature Range TS - 65 to + 175 O
C

Characteristics at Ta = 25 OC
Parameter Symbol Max. Unit
Forward Voltage VF 0.8 V
at IF = 10 mA
Reverse Current IR 0.1 µA
at VR = 30 V
Capacitance C 3 pF
at VR = 1 V, f = 1 MHz
Reverse Recovery Time trr 3.5 ns
at IF = 10 mA VR = 6 V,RL = 50 Ω

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/06/2007
1N-SS119

Fig.1-Forward current Vs. Forward voltage Fig.2- Reverse current Vs. Reverse voltage
-4
-1 10
10

Ta=125 oC
10 -5

Reverse current I R (A)

Forward current I F (A)

10 -2 o
10-6 Ta=75 C
25 C
Ta=1 o

C
T a= o

C
Ta=25 o
75

5 C
Ta=-2 o

10 -7

10 -3
o
Ta=25 C
10 -8

10 -4 10 -9
0 10 20 30 40 50
0 0.2 0.4 0.6 0.8 1.0 1.2

Forward votlage V F (V) Reverse voltage V R (V)

Fig.3- Capacitance Vs. Reverse voltage

f=1MHz

10
Capacitance C (pF)

1.0

0.1
1.0 10 100
Reverse voltage V R (V)

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/06/2007