Tute-1

1. For silicon at T=300K, Intrinsic carrier concentration (𝑛𝑖 ) = 1.45 × 1010 𝑐𝑚−3. This
silicon is doped at room temperature (300K) with Arsenic atoms (pentavalent), and the donor
concentration is (𝑁𝐷 ) =6× 1016 cm-3.
Find the equilibrium concentration of electrons, holes and shift of the chemical potential (Fermi
level) with respect to intrinsic chemical potential.
2. In the simple current source shown in the figure, Q1 and Q2 are identical transistors with
current gain β= 100 and VBE=0.7 V. Find the value of Current Io.

Vice =30 V

5KΩ
I0
Q1
Q2

3.A transistor circuit is given below (silicon transistor). The transistor has a minimum value of
𝛽=30

i) Find 𝑉o for 𝑉𝑖 = 12𝑉

ii) Find 𝑉o for 𝑉𝑖 = 1𝑉
4. In the circuit given below, find the minimum value of 𝑅, for which one out of the two
transistors remains in active region. Both the transistors are similar and made of silicon with
𝛽 = 100, Neglect reverse saturation current.

+12 V

4 kΩ 1 kΩ
2 kΩ

1 kΩ
Q1 Q2

6 kΩ

5. For the circuit shown, transistors Q1 and Q2 operate in the active region with 𝑉𝐵𝐸1 =
𝑉𝐵𝐸2 = 0.7 𝑉, 𝛽1 = 100, and 𝛽2 = 50. The reverse saturation current may be neglected.
(a) Find the currents 𝐼𝐵2 , 𝐼1 , 𝐼2 , 𝐼𝐶2 , 𝐼𝐵1 , 𝐼𝐶1 , and 𝐼𝐸1
(b) Find the voltage 𝑉𝑂1 and 𝑉𝑂2

+24 V

𝑰𝟏 𝑰𝒄𝟐
82 K 1K
100 K
Q2
𝑰𝑪𝟏
𝑰𝟐 Q1
10 K 𝑰𝑩𝟏 100 Ω 𝑰𝑬𝟏