All MOSFET.

IRFP4242 Datasheet

BJT

MOSFET

IGBT

SCR

SMD CODE

PACKAGES

APPS

search

TDK supports your applications

TDK Corporation Open

IRFP4242 MOSFET.
Datasheet pdf. Equivalent
Type Designator: IRFP4242

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 430 W

Maximum Drain-Source Voltage |Vds|: 300 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 46 A

Total Gate Charge (Qg): 165 nC

Maximum Drain-Source On-State Resistance (Rds):

0.059 Ohm

Package: TO247AC

IRFP4242 Transistor Equivalent Substitute -

MOSFET Cross-Reference Search

TDK's Application Guides for electronics,

get the most suitable one for your design

TDK Corporation Open

IRFP4242 Datasheet (PDF)

1.1. irfp4242pbf.pdf Size:290K _upd-mosfet

​PD - 96966B IRFP4242PbF PDP MOSFET Features

Key Parameters l Advanced process technology VDS
min 300 V l Key parameters optimized for PDP
Sustain & Energy Recovery applications VDS
(Avalanche) typ. 360 V l Low EPULSE rating to
reduce the power m RDS(ON) typ. @ 10V 49
dissipation in Sustain & ER applications IRP max @
TC= 100°C 93 A l Low QG for fast response TJ max l
High re

4.1. irfp4232pbf.pdf Size:290K _upd-mosfet

​PD - 96965A IRFP4232PbF PDP MOSFET Features

Key Parameters l Advanced process technology VDS
min 250 V l Key parameters optimized for PDP
Sustain & Energy Recovery applications VDS
(Avalanche) typ. 300 V l Low EPULSE rating to
reduce the power m RDS(ON) typ. @ 10V 30
dissipation in Sustain & ER applications EPULSE typ.
310 µJ l Low QG for fast response IRP max @ TC=
100°C l

4.2. irfp4227pbf.pdf Size:296K _upd-mosfet

​PD - 97070A IRFP4227PbF PDP SWITCH Features

Key Parameters l Advanced Process Technology
VDS max 200 V l Key Parameters Optimized for PDP
Sustain, Energy Recovery and Pass Switch
Applications VDS (Avalanche) typ. 240 V l Low
EPULSE Rating to Reduce Power m RDS(ON) typ.
@ 10V 21 Dissipation in PDP Sustain, Energy
Recovery IRP max @ TC= 100°C 130 A and Pass
Switch Applications

4.3. irfp4228pbf.pdf Size:300K _upd-mosfet

​PD - 97229A IRFP4228PbF PDP SWITCH Features l

Advanced Process Technology Key Parameters l Key
Parameters Optimized for PDP VDS min 150 V
Sustain, Energy Recovery and Pass VDS
(Avalanche) typ. 180 V Switch Applications RDS(ON)
typ. @ 10V m 12 l Low EPULSE Rating to Reduce
Power IRP max @ TC= 100°C 170 A Dissipation in
PDP Sustain, Energy TJ max 175 °C Recovery and
Pass

4.4. irfp4229pbf.pdf Size:301K _upd-mosfet

​PD - 97079B IRFP4229PbF PDP SWITCH Features

Key Parameters l Advanced Process Technology
VDS min 250 V l Key Parameters Optimized for PDP
Sustain, Energy Recovery and Pass Switch
Applications VDS (Avalanche) typ. 300 V l Low
EPULSE Rating to Reduce Power RDS(ON) typ. @
10V m 38 Dissipation in PDP Sustain, Energy
Recovery IRP max @ TC= 100°C 87 A and Pass
Switch Applications

4.5. irfp4227pbf.pdf Size:212K

_inchange_semiconductor

​INCHANGE Semiconductor Isc N-Channel MOSFET

Transistor IRFP4227PBF ·FEATURES ·With TO-247
packaging ·Uninterruptible power supply ·High speed
switching ·Hard switched and high frequency circuits
·100% avalanche tested ·Minimum Lot-to-Lot
variations for robust device performance and reliable
operation ·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)

4.6. irfp4227.pdf Size:242K

_inchange_semiconductor

​isc N-Channel MOSFET Transistor IRFP4227

IIRFP4227 ·FEATURES ·Static drain-source on-
resistance: RDS(on)≤21mΩ ·Enhancement mode:
·100% avalanche tested ·Minimum Lot-to-Lot
variations for robust device performance and reliable
operation ·DESCRITION ·High Repetitive Peak
Current Capability for Reliable Operation ·Short fall &
Rise Times For Fast Switching ·ABSOLUTE MAXIM

4.7. irfp4229.pdf Size:242K

_inchange_semiconductor

​isc N-Channel MOSFET Transistor IRFP4229

IIRFP4229 ·FEATURES ·Static drain-source on-
resistance: RDS(on)≤46mΩ ·Enhancement mode:
·100% avalanche tested ·Minimum Lot-to-Lot
variations for robust device performance and reliable
operation ·DESCRITION ·High Repetitive Peak
Current Capability for Reliable Operation ·Short fall &
Rise Times For Fast Switching ·ABSOLUTE MAXIM

Datasheet: ZXMS6003G , ZXMS6004DG ,

ZXMS6004DT8 , ZXMS6004FF , ZXMS6004SG ,
ZXMS6005DG , ZXMS6005DT8 , ZXMS6005SG ,
IRFB4227 , ZXMS6006DT8 , ZXMS6006SG ,
ZXMHC10A07N8 , ZXMHC10A07T8 ,
ZXMHC3A01N8 , ZXMHC3A01T8 , ZXMHC3F381N8
, ZXMHC6A07N8 .

LIST

Last Update

MOSFET: IPP45N04S4L-08 | IPI45N04S4L-08 |

IPP12CNE8NG | IPI12CNE8NG | IPD12CNE8NG |
IPP08CNE8NG | IPI08CNE8NG | IPI06CN10NG |
IPP054NE8NG | IPI05CNE8NG | IPP050N06NG |
SWP069R10VS | SWD069R10VS | SWI069R10VS |
NTHL082N65S3F |

SMD code search

AllTransistors(C)2015

BJT | | MOSFET | | IGBT | | SCR | |

MANUFACTURER SITES | | SMD CODE | |
PACKAGES | | MOBILE APPS | | Privacy and cookie
policy | | Disclaimer | | Terms and conditions | |
Contact

DISCLOSURE: As an Amazon Associate I earn from

qualifying purchases.