SUN0550F

Advanced N-Ch Power MOSFET

HIGH SPEED SWITCHING APPLICATION

Features
 Low drain-source On resistance: RDS(on)=1.23Ω (Typ.)
 Low gate charge: Qg=10.5nC (Typ.)
 Low reverse transfer capacitance: Crss=2pF (Typ.)
 RoHS compliant device
 100% avalanche tested

Ordering Information
GDS
Part Number Marking Package

SUN0550F SUN0550 TO-220F-3L TO-220F-3L

Marking Information

Column 1: Manufacturer
Column 2: Production Information
AUK
AUK
△YMDD
e.g.) △YMDD
ΔYMDD
SUN0550 -. △: Factory Management Code
SDB20D45
-. YMDD: Date Code (Year, Month, Date)
Column 3: Device Code

Absolute maximum ratings (TC=25C unless otherwise noted)

Characteristic Symbol Rating Unit

Drain-source voltage VDSS 500 V

Gate-source voltage VGSS 30 V
Tc=25C 4.5 A
Drain current (DC) * ID
Tc=100C 2.85 A
*
Drain current (Pulsed) IDM 18 A
(Note 2)
Single pulsed avalanche energy EAS 281 mJ
(Note 1)
Repetitive avalanche current IAR 4.5 A
(Note 1)
Repetitive avalanche energy EAR 2.9 mJ
Power dissipation PD 29 W
Junction temperature TJ 150 C
Storage temperature range Tstg -55~150 C

* Limited only maximum junction temperature

Rev. date: 01-MAY-13 KSD-T0O124-000 www.auk.co.kr

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Thermal Characteristics
Characteristic Symbol Rating Unit

Thermal resistance, junction to case Rth(j-c) Max. 4.27

C/W
Thermal resistance, junction to ambient Rth(j-a) Max. 62.5

Electrical Characteristics (TC=25C unless otherwise noted)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Drain-source breakdown voltage BVDSS ID=250uA, VGS=0 500 - - V

Gate threshold voltage VGS(th) ID=250uA, VDS=VGS 3 - 5 V
VDS=500V, VGS=0V - - 1 uA
Drain-source cut-off current IDSS
VDS=400V, Tc=125C - - 10 uA
Gate leakage current IGSS VDS=0V, VGS=30V - - 100 nA
Drain-source on-resistance RDS(ON) VGS=10V, ID=2.25A - 1.23 1.5 
(Note 3)
Forward transfer conductance gfs VDS=10V, ID=2.25A - 4.5 - S
Input capacitance Ciss - 760 -
VDS=25V, VGS=0V,
Output capacitance Coss - 65 - pF
f=1.0MHz
Reverse transfer capacitance Crss - 2 -
(Note 3,4)
Turn-on delay time td(on) - 35 -
(Note 3,4)
Rise time tr VDD=250V, ID=4.5A, - 26 -
ns
Turn-off delay time (Note 3,4)
td(off) RG=25Ω - 80 -
(Note 3,4)
Fall time tf - 19 -
(Note 3,4)
Total gate charge Qg - 10.5 15
(Note 3,4) VDS=400V, VGS=10V,
Gate-source charge Qgs - 4 - nC
ID=4.5A
(Note 3,4)
Gate-drain charge Qgd - 2 -

Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Source current (DC) IS Integral reverse diode - - 4.5 A

Source current (Pulsed) ISM in the MOSFET - - 18 A
Forward voltage VSD VGS=0V, ISD=4.5A - - 1.4 V
(Note 3,4)
Reverse recovery time trr ISD=4.5A, VGS=0V - 330 - ns
Reverse recovery charge (Note 3,4)
Qrr dIF/dt=100A/us - 1.15 - uC

Note:
1. Repeated rating: Pulse width limited by safe operating area
2. L=25mH, IAS=4.5A, VDD=50V, RG=25, Starting TJ=25C
3. Pulse test: Pulse width≤300us, Duty cycle≤2%
4. Essentially independent of operating temperature typical characteristics

Rev. date: 01-MAY-13 KSD-T0O124-000 www.auk.co.kr

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 SUN0550F
Electrical Characteristics Curves

Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics

Fig.3 On-Resistance Variation with Drain Current Fig. 4 Body Diode Forward Voltage Variation
and Gate Voltage with Source Current and Temperature

Fig. 5 Typical Capacitance Characteristics Fig. 6 Typical Total Gate Charge Characteristics

Rev. date: 01-MAY-13 KSD-T0O124-000 www.auk.co.kr

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 SUN0550F
Fig. 7 Breakdown Voltage Variation vs. Temperature Fig. 8 On-Resistance Variation vs. Temperature

Fig. 9 Maximum Drain Current vs. Case Temperature Fig. 10 Maximum Safe Operating Area

Fig. 11 Transient Thermal Impedance

Rev. date: 01-MAY-13 KSD-T0O124-000 www.auk.co.kr

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 SUN0550F
Fig. 12 Gate Charge Test Circuit & Waveform

Fig. 13 Resistive Switching Test Circuit & Waveform

Fig. 14 EAS Test Circuit & Waveform

Rev. date: 01-MAY-13 KSD-T0O124-000 www.auk.co.kr

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 SUN0550F
Fig. 15 Diode Reverse Recovery Time Test Circuit & Waveform

Rev. date: 01-MAY-13 KSD-T0O124-000 www.auk.co.kr

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Package Outline Dimensions

Rev. date: 01-MAY-13 KSD-T0O124-000 www.auk.co.kr

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The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.

Rev. date: 01-MAY-13 KSD-T0O124-000 www.auk.co.kr

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