1SS355

FAST SWITCHING DIODE

VOLTAGE 80 Volts CURRENT 150 mAmperes

FEATURES
* Flat Lead SOD-323 Small Outline Plastic Package
* Surface Device Type Mounting
* Fast Switching Device (Trr<4.0nS)
* Moisture Sensitivity Level 1
* General Purpose Diodes
* Clip Bonding Construction,Good Thermal Capability
SOD-323
* Pb Free Version and ROHS Compliant
* Matte Tin(Sn) Lead Finish with Nicke(Ni) Underplate
* Band Indicates Cathode
.071 (1.8)
.063 (1.6)

.016 (0.40) .053 (1.35)

.010 (0.25) .045 (1.15)

.043 (1.10)
.010 (0.25)
.031 (0.80)
.002 (0.05)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.106 (2.7)
Ratings at 25 o C ambient temperature unless otherwise specified. .091 (2.3)
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

Dimensions in inches and (millimeters)

Absolute Maximum Ratings (@ TA=25 OC unless otherwise noted)

RATINGS SYMBOL 1SS355 UNITS
Reverse Voltage VR 80 Volts
Repetitive Peak Reverse Voltage VRM 90 Volts
Continuous Forward Current IO 150 mAmps
Forward Current I FM 0.25 Amps
Repetitive Peak Forward Current I FRM 0.5 Amps
Power Dissipation PD 200 mW
O
Operating Junction Temperature TJ +150 C
O
Storage Temperature Range TSTG -65 to + 150 C
These ratings are limiting values above which the serviceability of the diode may be impaired.

ELECTRICAL CHARACTERISTICS (@TA=25 OC unless otherwise noted)

1SS355
CHARACTERISTICS SYMBOL UNITS
Min. Max.
Forward Voltage @IF=100mA VF 1.2 Volts
Reverse Leakage Current @VR=80V IR 100 nAmps
Breakdown Voltage @IR=100uA VR 80 Volts
Reverse Recovery Time (I F=10mA,V R=6V,R L=100W) Trr 4 nS
Capacitance (V R=0.5V,f=1MHz) C 4 pF
VB 2007-9
 RATING AND CHARACTERISTICS CURVES ( 1SS355 )

CAPACITANCE BETWEEN TERMINALS, (pF)

100 10 10
O
TA=125 C f= 1MHz
FORWARD CURRENT, (mA)

REVERSE CURRENT, (uA)

O
TA=125 C 1 O
TA= 75 C
10
TA=75OC 0.1 O
TA=25OC TA= 25 C
1
0.01 TA= -25 C
O
O
1 TA=-25 C

0.001

1.0 0.0001 0.1

0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100 120 0 10 20 30
FORWARD VOLTAGE, (mV) REVERSE VOLTAGE, (V) REVERSE VOLTAGE, (V)
FIG.1 VF-IF CHARACTERISTICS FIG.2 VR-IR CHARACTERISTICS FIG.3 VR-Ct CHARACTERISTICS

TRANSIENT THAERMAL IMPEDANCE, (OC/W)

PEAK SURGE FORWARD CURRENT, (A)

PEAK SURGE FORWARD CURRENT, (A)

20
100 1000
8.3mS Single Half Sine-Wave 8.3mS Single Half Sine-Wave Rth (j-a)
(JEDEC Method) (JEDEC Method)
15
100
Rth (j-c)
10 10 Mounted on epoxy board

10 IM=1mA IF=10mA
5
1mS time

300uS
0 1 1
0.1 1 10 100 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000

NUMBER OF CYCLES TIME, (nS) TIME, (S)

FIG.4 IFSM-CYCLE CHARACTERISTICS FIG.5 IFSM-t CHARACTERISTICS FIG.6 Rth-t CHARACTERISTICS
AVERAGE RECTIFIER FORWARD CURRENT, (A)

AVERAGE RECTIFIER FORWARD CURRENT, (A)

REVERSE POWER DISSIPATION, (W)

0.001 0.20 0.20

DC DC

0.15 0.15
D= 1/2
D= 1/2
Sin(θ=180)

0.0005 0.10 0.10

Sin(θ=180)
D= 1/2
DC 0A IO 0A IO
Sin(θ=180) 0.05 0.05
0V VR 0V VR
t t D= t/T
D= t/T
VR= 40V VR= 40V
T Tj= 125OC T Tj= 125OC
0 0 0
0 20 40 60 80 100 120 0 25 50 75 100 125 0 25 50 75 100 125
REVERSE VOLTAGE, (V) AMBIENT TEMPERATURE, (OC) CASE TEMPERATURE, (OC)
FIG.7 VR-PR CHARACTERISTICS FIG.8 IO-TA CHARACTERISTICS FIG.9 IO-TC CHARACTERISTICS
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lity for any errors or inaccuracies. Data sheet specifications and its information
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