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Abstract: - This paper presents the simulation performance of Dual Active Bridge (DAB) DC-DC converter for
high power density aerospace applications. The DAB converter topology has been chosen as it features high
power density, high efficiency, bidirectional power flow capability, inherent soft switching, galvanic isolation
and low number of passive components. Hence the converter is a candidate for high power density applications.
For performance evaluation, input side of the converter is connected to the high voltage (HV) DC bus and
output side of the converter is connected to the low voltage (LV) ultracapacitor. A 20kW DAB converter is
modelled using SABER software. SABER simulation results verify that the performance of the DAB DC-DC
converter is suitable for high power density applications such as aerospace energy storage systems.
Key-Words: - DC-DC converter, Dual active bridge topology, High power density, Ultracapacitor, Bidirectional
operation, Galvanic isolation.
ISBN: 978-1-61804-074-9 13
Recent Researches in Applications of Electrical and Computer Engineering
right-hand-side is connected to a low voltage (LV) bottom portions of each leg, the devices located in
ultracapacitor. the top of each leg are affixed with a subscript ‘1’
and the devices in the bottom of each leg are affixed
with a subscript ‘2’. The anti-parallel diode across
each device is named in the same manner with an
additional subscript ‘D’.
To elucidate the operation and power flow in the
converter, the simplified equivalent circuit and
phasor diagrams are shown in Figures 1 (b) and (c).
The voltages generated by the two full-bridges, VHV
on the HV side and VLV on the LV side are square-
wave voltages with a fixed 50% duty cycle. iL
denotes the current flowing through the coupling
inductance L, and VL is the voltage across the
coupling inductance. iin denotes the HV side
(a) terminal (input) current and i0 denotes the LV side
terminal (output) current. The phase shift between
dTS
VHV and VLV is , where TS is the switching period
2
and d is the controlled duty ratio. The phase
displacement between VHV and current iL is denoted
as Ф. Phasor diagrams (i) and (ii) depicted in Figure
1 (c) show that when VLV lags VHV, power flows
from the HV bridge to the LV bridge and reverses
when VLV leads VHV.
(b)
2.1 Principle of Operation – Charging mode
During this mode, the HV bridge leads the LV
bridge by dTs/2, where ‘d’ is the duty ratio and ‘Ts’
is the time period for one cycle. Thereby power
flows from the HV side to the LV ultracapacitor
side to charge it. The primary, HV bridge performs
inverter operation and the secondary, LV bridge
performs rectification function. During description
(i) (ii) of the states, it is assumed that the energy stored in
the coupling inductance is sufficient to realise zero-
(c)
voltage switching (ZVS) of all transistors. The key
Fig. 1 (a) Schematic of the DAB DC-DC converter operating waveforms of the converter during the
(b) Simplified equivalent circuit charging mode, when power flows from the HV side
(c) Phasor diagram for (i) lagging (VLV lags VHV ) and (ii) to the LV ultracapacitor side, are shown in Figure 2.
leading phase (VLV leads VHV ) shifts The waveforms depict the gate voltages of
transistors SA1 to SD2, the voltages generated by the
Each bridge is controlled to generate a high- bridges VHV on the HV side and VLV on the LV side;
frequency square-wave voltage at its transformer iL denotes the current flowing through the coupling
terminals of the same frequency. The two square- inductance, iAD1-A1 and iCD1-C1 are the device currents
waves can be phase-shifted with respect to each on the HV and LV sides respectively and i0 is the
other to control the power flow through the LV side terminal current. All the transistors in the
transformer and inductor. Thus power can be made HV bridge exhibit similar waveforms, though A2
to flow from Vin to V0 or vice versa. Power always and B1 are displaced by half a cycle from transistors
flows from the bridge generating the leading square- A1 and B2. Similarly, on the LV bridge, although
wave to the other bridge [1]. transistors C1, C2, D1 and D2 have similar current
For illustration purposes, the switching devices on waveforms, C2 and D1 are displaced in time by a
the HV side are labelled ‘A’ and ‘B’ and those on half cycle with respect to C1 and D2. The transistor
the LV side are indicated ‘C’ and ‘D’. In order to A1 current waveform and transistor C1 current
differentiate the devices located in the top and waveform are drawn with their anti-parallel diode
ISBN: 978-1-61804-074-9 14
Recent Researches in Applications of Electrical and Computer Engineering
Figure 2. 0
• t0 → t1
The cycle starts at t0 when transistors A1 and 0
Vin
B2 are turned on while their anti-parallel diodes AD1
0
and BD2 are conducting. This develops the supply dTS
2
voltage, Vin, across the transformer primary TS
2 V0
TS
• t2 → t3 0
ISBN: 978-1-61804-074-9 15
Recent Researches in Applications of Electrical and Computer Engineering
in an aircraft when peak power demand occurs in Table 2 Summary of device switching conditions during
electric loads. Compared to the previous mode, the discharging mode
circuit operation is reversed. As a result, the
secondary LV bridge performs an inverter operation Half Time Conducting devices ZVS ZVS
and the primary HV bridge performs rectification to cycle instant Input Output Turn- Turn-
discharge the ultracapacitor. The various switching bridge bridge on off
instants during discharging mode are marked in t0-t1 A 2 , B1 C1, D2 A 2 , B1 ,
First C1, D2
Figure 3. The waveforms in Figure 3 depict the gate t1-t2 AD1, C1, D2 A 2 , B1
voltages of transistors SA1 to SD2, voltages generated BD2
by the bridges VHV and VLV, the current iL flowing t2-t3 AD1, CD2, DD1 C1, D2
through the coupling inductance, the device currents BD2
iAD1-A1 and iCD1-C1 on the HV and LV sides Second t3-t4 A 1 , B2 C2, D1 A 1 , B2 ,
C2, D1
respectively and the LV side terminal current i0. t4-t5 AD2, C2, D1 A 1 , B2
Table 2 summarizes the device switching conditions BD1
for a cycle during this mode. t5-t6 AD2, CD1, DD2 C2, D1
• t0 → t1 BD1
Just before t0, the anti-parallel diodes CD1
and DD2 are conducting. At time t0, transistors C1 and
D2 are turned-on. The ultracapacitor voltage is
applied across the transformer secondary. On the
primary (HV side), transistors A2 and B1 are 0
ISBN: 978-1-61804-074-9 16
Recent Researches in Applications of Electrical and Computer Engineering
voltage conversion depending upon the phase shift. Operating conditions and circuit parameters
During charging mode, the converter operates in corresponding to the simulations are given in the
buck mode to step down the aircraft power system Figure captions. Figure 4 shows SABER simulation
voltage. On the contrary, the discharging mode steps waveforms for the charging mode of the
up the voltage and the converter works in boost ultracapacitor. Figure 4 depicts the voltages
mode. generated by the two full-bridges, VHV on the HV
side and VLV on the LV side, the current flowing
through the coupling inductance iL, the device
3 Problem Solution currents on the HV side iA1 ,iAD1 and the device
The key equations of the DAB converter are currents on the LV side iC1, iCD1, the HV side
summarized below. The detailed derivation can be terminal current iin and the LV side terminal current
found in [27]. The peak inductor current which is i 0.
the current at the HV switching instant is expressed Charging mode is applicable when V0’ < 1. For
as, voltage conversion ratios greater than one ( V0’ > 1),
during the charging mode, the shape of the inductor
TS current in Figure 2 will change and the effect of this
IP = [V0 (2d − 1) + nVin ] (1) is to interchange the expressions for the currents at
4L
the LV and HV switching instants. For VHV = 540V,
The expression for the inductor current IL1, which is n = 1: 0.2 and VLV = 125V, the voltage conversion
the LV switching instant current is given by, ratio is 1.16. Therefore from the performance
analysis, the expected steady-state values are
TS calculated as IP = 288.13A, I0 = 159.96A, IL1 =
I L1 = [nV in (2 d − 1) + V 0 ] (2) 116.15A, IRMS = 196.51A. These values correlate
4L
well with the SABER results. Figure 5 presents
The expression for average output current is given simulation results for the discharging mode of
as follows, operation. Again, the measurement results from
SABER simulation confirm the values obtained
through performance analysis, which are IP = 640A,
Io =
T S nV in
2L
d −d2 ( ) (3) I0 = -320A, IL1 = 370.37 and IRMS = 426.92A.
'
Io = d − d 2 (4)
ISBN: 978-1-61804-074-9 17
Recent Researches in Applications of Electrical and Computer Engineering
ISBN: 978-1-61804-074-9 18
Recent Researches in Applications of Electrical and Computer Engineering
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ISBN: 978-1-61804-074-9 19