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Performance Verification of Dual Active Bridge DC-DC Converter

Conference Paper · March 2012

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Recent Researches in Applications of Electrical and Computer Engineering

Performance Verification of Dual Active Bridge DC-DC Converter


R. T. NAAYAGI*, N. E. MASTORAKIS§
*
Department of Electrical and Electronics Engineering
Vel Tech Dr. RR and Dr. SR Technical University
42 Avadi-Vel Tech Road, Avadi, Chennai 600 062, Tamil Nadu
INDIA
naayagi04@gmail.com
§
Department of Industrial Engineering
Technical University of Sofia
8, Kliment Ohridski Street
Sofia 1000
BULGARIA
mastor@tu-sofia.bg

Abstract: - This paper presents the simulation performance of Dual Active Bridge (DAB) DC-DC converter for
high power density aerospace applications. The DAB converter topology has been chosen as it features high
power density, high efficiency, bidirectional power flow capability, inherent soft switching, galvanic isolation
and low number of passive components. Hence the converter is a candidate for high power density applications.
For performance evaluation, input side of the converter is connected to the high voltage (HV) DC bus and
output side of the converter is connected to the low voltage (LV) ultracapacitor. A 20kW DAB converter is
modelled using SABER software. SABER simulation results verify that the performance of the DAB DC-DC
converter is suitable for high power density applications such as aerospace energy storage systems.

Key-Words: - DC-DC converter, Dual active bridge topology, High power density, Ultracapacitor, Bidirectional
operation, Galvanic isolation.

1 Introduction These modulation methods are applicable for certain


voltage conversion ratios and dead-time, but
The Dual Active Bridge (DAB) converter is popular increase the RMS and peak currents of the devices.
amongst researchers over the past two decades. Reference [18] studied the performance of the DAB
High performance, high efficiency along with soft converter incorporating the latest switching devices
switching capability and galvanic isolation are and the use of this topology for automobile
notable benefits of this converter topology. The first applications was investigated in [19-20]. References
article on a DAB converter [1], published 17 years [21-26] validated the performance of the DAB
ago, highlighted its performance for high power topology for next generation power conversion
applications. Subsequently, several papers were systems and energy storage systems using
published [2-6] on the converter performance, supercapacitor based technologies.
accompanied by comprehensive analysis. A
comparative evaluation of the DAB topology with
other isolated converter topologies was reported in 2 Problem Formulation
[8-9] and soft switching techniques to enhance the This paper presents the DAB converter operational
performance were presented in [10-13]. Various performance for high power density aerospace
modulation techniques and control strategies to applications. The DAB converter shown in Figure
minimise the losses were investigated in [14-17]. 1(a) consists of two full-bridge circuits whose AC
The authors of [14-15] introduced trapezoidal and connections, ‘ab’ and ‘cd’ are connected through an
triangular modulation methods to achieve triangular isolation transformer and a coupling inductor L,
and trapezoidal currents in the AC link. This was which may be provided partly or entirely by the
achieved by modulating the duty ratio of the transformer leakage inductance. The full bridge on
converter bridges as an alternative method to the left-hand-side of Figure 1(a) is connected to the
reducing losses over a wide operating voltage range. high voltage (HV) DC bus and the full-bridge on the

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Recent Researches in Applications of Electrical and Computer Engineering

right-hand-side is connected to a low voltage (LV) bottom portions of each leg, the devices located in
ultracapacitor. the top of each leg are affixed with a subscript ‘1’
and the devices in the bottom of each leg are affixed
with a subscript ‘2’. The anti-parallel diode across
each device is named in the same manner with an
additional subscript ‘D’.
To elucidate the operation and power flow in the
converter, the simplified equivalent circuit and
phasor diagrams are shown in Figures 1 (b) and (c).
The voltages generated by the two full-bridges, VHV
on the HV side and VLV on the LV side are square-
wave voltages with a fixed 50% duty cycle. iL
denotes the current flowing through the coupling
inductance L, and VL is the voltage across the
coupling inductance. iin denotes the HV side
(a) terminal (input) current and i0 denotes the LV side
terminal (output) current. The phase shift between
dTS
VHV and VLV is , where TS is the switching period
2
and d is the controlled duty ratio. The phase
displacement between VHV and current iL is denoted
as Ф. Phasor diagrams (i) and (ii) depicted in Figure
1 (c) show that when VLV lags VHV, power flows
from the HV bridge to the LV bridge and reverses
when VLV leads VHV.
(b)
2.1 Principle of Operation – Charging mode
During this mode, the HV bridge leads the LV
bridge by dTs/2, where ‘d’ is the duty ratio and ‘Ts’
is the time period for one cycle. Thereby power
flows from the HV side to the LV ultracapacitor
side to charge it. The primary, HV bridge performs
inverter operation and the secondary, LV bridge
performs rectification function. During description
(i) (ii) of the states, it is assumed that the energy stored in
the coupling inductance is sufficient to realise zero-
(c)
voltage switching (ZVS) of all transistors. The key
Fig. 1 (a) Schematic of the DAB DC-DC converter operating waveforms of the converter during the
(b) Simplified equivalent circuit charging mode, when power flows from the HV side
(c) Phasor diagram for (i) lagging (VLV lags VHV ) and (ii) to the LV ultracapacitor side, are shown in Figure 2.
leading phase (VLV leads VHV ) shifts The waveforms depict the gate voltages of
transistors SA1 to SD2, the voltages generated by the
Each bridge is controlled to generate a high- bridges VHV on the HV side and VLV on the LV side;
frequency square-wave voltage at its transformer iL denotes the current flowing through the coupling
terminals of the same frequency. The two square- inductance, iAD1-A1 and iCD1-C1 are the device currents
waves can be phase-shifted with respect to each on the HV and LV sides respectively and i0 is the
other to control the power flow through the LV side terminal current. All the transistors in the
transformer and inductor. Thus power can be made HV bridge exhibit similar waveforms, though A2
to flow from Vin to V0 or vice versa. Power always and B1 are displaced by half a cycle from transistors
flows from the bridge generating the leading square- A1 and B2. Similarly, on the LV bridge, although
wave to the other bridge [1]. transistors C1, C2, D1 and D2 have similar current
For illustration purposes, the switching devices on waveforms, C2 and D1 are displaced in time by a
the HV side are labelled ‘A’ and ‘B’ and those on half cycle with respect to C1 and D2. The transistor
the LV side are indicated ‘C’ and ‘D’. In order to A1 current waveform and transistor C1 current
differentiate the devices located in the top and waveform are drawn with their anti-parallel diode

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Recent Researches in Applications of Electrical and Computer Engineering

currents. Based on the assumption of loss-less


components, the sequence of steady-state modes 0

over one half of a switching cycle is described


below. The various time instants are indicated in 0

Figure 2. 0
• t0 → t1
The cycle starts at t0 when transistors A1 and 0
Vin
B2 are turned on while their anti-parallel diodes AD1
0
and BD2 are conducting. This develops the supply dTS
2
voltage, Vin, across the transformer primary TS
2 V0
TS

winding. Transistors C2 and D1 are conducting on


0
the LV bridge side; thereby the transformer
secondary voltage is clamped to –V0 and this results I L1
IP

in a gradual increase of inductor current. 0


• t1 → t2
The transistors A1 and B2 continue to be on.
At time t1, transistors C2 and D1 are turned-off with 0
ZVS. However, the current during turn-off is high
and therefore to benefit from soft-switching, a turn-
off snubber is needed. The current from transistor C2 0
is transferred to diode CD1. Similarly, transistor D1
current is transferred to DD2 under ZVS. Now DD2
and CD1 are conducting; therefore the transformer 0

secondary voltage is clamped to V0. As a result, the


IP
inductor current increases to its peak value. I L1

• t2 → t3 0

At t2, transistors A1 and B2 are turned off − I L1

under ZVS. The current from transistor A1 transfers I r = I P − I L1


tB
to diode AD2 under ZVS and current from transistor TS dTS

2 2
B2 transfers to diode BD1, hence AD2 and BD1 are dTS
− tB
2
conducting. Thereby the primary voltage is clamped
to Vin in the opposite direction, whereas on the LV
Fig. 2 Idealized waveforms of the DAB converter during
bridge side, diodes DD2 and CD1 continue to conduct charging mode
and the transformer secondary voltage is retained at
V0. As a result, inductor current falls to zero and
charges in the opposite direction gradually. This Table 1 Summary of switching conditions of devices during
completes one half cycle. At t3, the cycle is charging mode
repeated, except with the corresponding opposite set
Half Time Conducting devices ZVS ZVS
of bridge transistors and diodes. cycle instant turn- turn-
Input Output
bridge bridge on off
An important feature of the converter operation is t0-t1 A1, B2 C2, D1 A1, B2,
that losses due to diode reverse recovery are First C2, D1
eliminated because the diodes have zero current at t1-t2 A1, B2 CD1, DD2 C2, D1
the turn-on instants of all transistors. Moreover, the t2-t3 AD2, CD1, DD2 A 1 , B2
BD1
turn-on of transistors under ZCVS conditions is due Second t3-t4 A2, B1 C1, D2 A2, B1,
to the resonance of the coupling inductance and C1, D2
device capacitances. Table 1 summarizes device t4-t5 A2, B1 CD2, DD1 C1, D2
switching conditions during the ultracapacitor t5-t6 AD1, CD2, DD1 A 2 , B1
charging mode. Though the table shows the BD2
switching conditions for all devices as ZVS on/off;
under light load conditions the devices will be 2.2 Principle of Operation - Discharging mode
subjected to hard switching. This is due to In this mode, the LV bridge leads the HV bridge by
insufficient energy being stored in the coupling dTs/2, thereby power flows from the LV side to the
inductance. HV side, assuming the source is capable of
accepting the stored energy. Such a situation arises

ISBN: 978-1-61804-074-9 15
Recent Researches in Applications of Electrical and Computer Engineering

in an aircraft when peak power demand occurs in Table 2 Summary of device switching conditions during
electric loads. Compared to the previous mode, the discharging mode
circuit operation is reversed. As a result, the
secondary LV bridge performs an inverter operation Half Time Conducting devices ZVS ZVS
and the primary HV bridge performs rectification to cycle instant Input Output Turn- Turn-
discharge the ultracapacitor. The various switching bridge bridge on off
instants during discharging mode are marked in t0-t1 A 2 , B1 C1, D2 A 2 , B1 ,
First C1, D2
Figure 3. The waveforms in Figure 3 depict the gate t1-t2 AD1, C1, D2 A 2 , B1
voltages of transistors SA1 to SD2, voltages generated BD2
by the bridges VHV and VLV, the current iL flowing t2-t3 AD1, CD2, DD1 C1, D2
through the coupling inductance, the device currents BD2
iAD1-A1 and iCD1-C1 on the HV and LV sides Second t3-t4 A 1 , B2 C2, D1 A 1 , B2 ,
C2, D1
respectively and the LV side terminal current i0. t4-t5 AD2, C2, D1 A 1 , B2
Table 2 summarizes the device switching conditions BD1
for a cycle during this mode. t5-t6 AD2, CD1, DD2 C2, D1
• t0 → t1 BD1
Just before t0, the anti-parallel diodes CD1
and DD2 are conducting. At time t0, transistors C1 and
D2 are turned-on. The ultracapacitor voltage is
applied across the transformer secondary. On the
primary (HV side), transistors A2 and B1 are 0

conducting; thereby the transformer primary is


clamped to Vin in the reverse direction. Since the 0

resultant voltage impressed across the inductor is 0


dTS
negative, a gradual increase of inductor current in 2
the reverse direction occurs until it attains its peak 0
Vin
value at time t1.
• t1 → t2 0

At t1, transistors A2 and B1 are turned-off


V0
under ZVS. Therefore, current is transferred from
transistors A2, B1 to diodes AD1 and BD2 0

respectively. This clamps the transformer primary to TS TS


the supply, Vin. Transistors C1 and D2 remain in 2 IP
I L1
conduction during this mode. The resultant voltage
0
across the inductor is positive during this interval,
which makes the inductor current fall from its
negative peak.
• t2 → t3 0

During this interval, current flowing in C1


and D2 transfers to diodes CD2 and DD1 respectively
0
under ZVS, and transistors C1 and D2 turn-off. Now
CD2 and DD1 are conducting, thereby the secondary
of the transformer is kept at -V0. Switches AD1 and
BD2 continue to conduct during this interval. As a 0

result, inductor current falls to zero and charges in IP

the forward direction gradually. This completes one


0
half cycle in discharging mode. The next half cycle − I L1
repeats at t3, except with the corresponding opposite − IP
I r = I P − I L1
set of bridge transistors and diodes. tB
TS dTS
Maximum power transfer is achieved at a phase- 2

2
dTS
shift of 90°, where the duty ratio is d = 0.5. High − tB
2
efficiency is obtained, since all devices operate
under ZVS conditions over much of the load range. Fig. 3 Ideal steady-state waveforms of the DAB converter under
The circuit can achieve either step-up or step down discharging mode

ISBN: 978-1-61804-074-9 16
Recent Researches in Applications of Electrical and Computer Engineering

voltage conversion depending upon the phase shift. Operating conditions and circuit parameters
During charging mode, the converter operates in corresponding to the simulations are given in the
buck mode to step down the aircraft power system Figure captions. Figure 4 shows SABER simulation
voltage. On the contrary, the discharging mode steps waveforms for the charging mode of the
up the voltage and the converter works in boost ultracapacitor. Figure 4 depicts the voltages
mode. generated by the two full-bridges, VHV on the HV
side and VLV on the LV side, the current flowing
through the coupling inductance iL, the device
3 Problem Solution currents on the HV side iA1 ,iAD1 and the device
The key equations of the DAB converter are currents on the LV side iC1, iCD1, the HV side
summarized below. The detailed derivation can be terminal current iin and the LV side terminal current
found in [27]. The peak inductor current which is i 0.
the current at the HV switching instant is expressed Charging mode is applicable when V0’ < 1. For
as, voltage conversion ratios greater than one ( V0’ > 1),
during the charging mode, the shape of the inductor
TS current in Figure 2 will change and the effect of this
IP = [V0 (2d − 1) + nVin ] (1) is to interchange the expressions for the currents at
4L
the LV and HV switching instants. For VHV = 540V,
The expression for the inductor current IL1, which is n = 1: 0.2 and VLV = 125V, the voltage conversion
the LV switching instant current is given by, ratio is 1.16. Therefore from the performance
analysis, the expected steady-state values are
TS calculated as IP = 288.13A, I0 = 159.96A, IL1 =
I L1 = [nV in (2 d − 1) + V 0 ] (2) 116.15A, IRMS = 196.51A. These values correlate
4L
well with the SABER results. Figure 5 presents
The expression for average output current is given simulation results for the discharging mode of
as follows, operation. Again, the measurement results from
SABER simulation confirm the values obtained
through performance analysis, which are IP = 640A,
Io =
T S nV in
2L
d −d2 ( ) (3) I0 = -320A, IL1 = 370.37 and IRMS = 426.92A.

Normalising the average output current by the base


value T S nV in gives,
2L

'
Io = d − d 2 (4)

The RMS component of current is needed to


estimate conduction losses in transformer/inductor
windings and losses in the devices. The RMS value
of inductor current and the output current i0 can be
derived using the HV and LV switching instant
current expressions and their respective time
intervals. Using these it is found that,
 
( I L1 )2  S −t B 
dT
2   2 I r  I P 2t B 
2
 2  + TS − dTS  
I RMS =   I L1 + +I L1 I r +
TS  3 2 2  3  3 
  (5)
 
To validate the performance of the DAB converter
given in section 2, detailed simulations were carried
out using SABER. This section presents simulation
results of the DAB converter for charging and
discharging modes of the ultracapacitor. The Fig. 4 Simulation results of the DAB converter – charging mode
VHV = 540V, n =1: 0.2, VLV = 125V, d = 0.146, P0 = 20kW,
simulation results are for a 20kW DAB converter. I0 = 160A, fs = 20kHz, L = 2.11µH

ISBN: 978-1-61804-074-9 17
Recent Researches in Applications of Electrical and Computer Engineering

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ISBN: 978-1-61804-074-9 18
Recent Researches in Applications of Electrical and Computer Engineering

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