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  • L5 Diode

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    Gautam Bafna
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    This document discusses diodes and their characteristics. It explains that increasing the reverse bias voltage increases the depletion region width, and that under high reverse bias the minority carriers gain enough energy to cause impact ionization. It also discusses different semiconductor materials used for diodes and their bandgaps, and some applications of diodes like solar cells and LEDs. It notes that Si and Ge diodes mainly dissipate recombination energy as heat while GaAs diodes emit infrared light during junction recombination.

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    This document discusses diodes and their characteristics. It explains that increasing the reverse bias voltage increases the depletion region width, and that under high reverse bias the minority carriers gain enough energy to cause impact ionization. It also discusses different semiconductor materials used for diodes and their bandgaps, and some applications of diodes like solar cells and LEDs. It notes that Si and Ge diodes mainly dissipate recombination energy as heat while GaAs diodes emit infrared light during junction recombination.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    1 views4 pages

    L5 Diode

    Uploaded by

    Gautam Bafna
    This document discusses diodes and their characteristics. It explains that increasing the reverse bias voltage increases the depletion region width, and that under high reverse bias the minority carriers gain enough energy to cause impact ionization. It also discusses different semiconductor materials used for diodes and their bandgaps, and some applications of diodes like solar cells and LEDs. It notes that Si and Ge diodes mainly dissipate recombination energy as heat while GaAs diodes emit infrared light during junction recombination.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    of 4

    ECN 101

    Introduction to Electronics and Communication Engineering


    Review

    Depletion region increases with voltage increase and vice versa Barrier
    Diode IV characteristics and breakdown
    • As the voltage across the diode increases in the reverse-bias
    region, the velocity of the minority carriers responsible for the
    reverse saturation current Is will also increase.

    • Eventually, their velocity and associated kinetic energy will be


    sufficient to release additional carriers through collisions with
    otherwise stable atomic structures.

    Si = 1.1 eV

    Ge = 0.67 eV

    GaAs = 1.42 eV
    Diode: different semiconductors
    Diode applications
    Solar Cells LEDs

    • In Si and Ge diodes the greater percentage of the


    energy converted during recombination at the
    junction is dissipated in the form of heat within the
    structure, and the emitted light is insignificant.

    • Diodes constructed of GaAs emit light in the


    infrared (invisible) zone during the recombination
    process at the p–n junction.

    Open circuit voltage

    Short circuit current

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