KNR1053 ANALOG ELECTRONICS

BASIC OVERVIEW OF ANALOG ELECTRONICS

Abd Hafiz Abd Karim
Faculty of Engineering (JKEE)
ELECTRONICS
ELECTRONIC DEVICES
ELECTRONIC SYSTEMS
 Overview

• Diodes
• Transistor (BJT)
• Transistor (FET)
Semiconductor Diode
1.1
Each shell corresponds to certain
energy level – separated by energy
gaps

This condition occurs only at 0 Kelvin

At room temperature – gain sufficient
heat (thermal energy) – valence electrons
able to jump from valence band to
conduction band – free electron

Electron move to conduction band,

one hole left in the valence band

A vacancy is left in the valence band

within the crystal - hole
 Number of electron
jump into the
conduction band =
number of hole left in
the valence band
The n stands for negative charge
on an electron
P-N JUNCTION
The basic diode structure at the instant of junction formation showing
only the majority and minority carriers
Energy diagrams illustrating the formation of pn junction and depletion
region
IDEAL DIODE
 Introduction

• The diode is the simplest and most fundamental

nonlinear circuit element.
• Just like resistor, it has two terminals.
• Unlike resistor, it has a nonlinear current-voltage
characteristics.
• Its use in rectifiers is the most common application.

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 Physical Structure

The most important region, which is called pn junction, is the boundary

between n-type and p-type semiconductor.

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 Symbol and Characteristic
for the Ideal Diode

(a) diode circuit symbol; (b) i–v characteristic; (c) equivalent circuit in the
reverse direction; (d) equivalent circuit in the forward direction.

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 Characteristics

• Conducting in one direction and not in the other

is the I-V characteristic of the diode.
• The arrowlike circuit symbol shows the direction
of conducting current.
• Forward biasing voltage makes it turn on.
• Reverse biasing voltage makes it turn off.

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 V-I Characteristic for Forward Bias

Dcbias the application of a dc voltage to a • 0V across the diode= NO FORWARD CURRECT

• Gradually increase = forward current and voltage across diode
diode, transistor and others to produce a increase
desired mode operation • Barrier potential 0.7V , current increase rapidly
I-V Characteristics:
Non ideal
DC Load Line
DC Load Line
Effect of Rload and Vs on DC load line
 Q-point

• The operating point or Q point of the diode is the

quiescent or no-signal condition. The Q point is
obtained graphically and is really only needed when
the applied voltage is very close to the diode’s barrier
potential voltage