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Shujing Chen
School of Automation and Mechanical Engineering
Shanghai University
Shanghai, China
csj427@i.shu.edu.cn
Abstract—Thermal management in high power devices are of low density and good maintainability. The resulting I-GTs
becoming more and more challenging due to the high density thus offers new solutions for addressing thermal management
packaging as well as dramatically increased transistor issues in high power electronics and other systems with small
integration. The conventional TIMs that are widely used in the form-factor.
microelectronic industry today are experiencing more and
more stress due to their limited thermal performance and poor Keywords- graphene, reliability, insulation, compressibility,
reliability. Composed by particle laden polymer matrix, bonding strength
conventional TIMs have thermal conductivity (K) values in the
range of 1-5 W/mK, and such values can be even lower for I. INTRODUCTION
electrically insulated TIMs. Conventional TIMs also suffer
from severe pump-out and dry-out failures, which brought The development of electronic industry towards
great threat to the performance and lifetime of the electronic miniaturization and higher performance leads to enormous
devices. Here, we address these problems by utilizing a highly thermal management challenges. To minimize adverse
thermally conductive, electrically insulated and reliable effects of such challenges both on the user’s health and
graphene enhanced TIMs (I-GTs). Composed by vertical- device’s reliability and performance, efficient thermal
aligned graphene layers, I-GTs provide a direct heat pathway management in high power density electronic products
from top to bottom, which enables superfast heat dissipation at
through-plane direction. The highest bulk thermal
becomes highly essential. As a key element in thermal
conductivity of the conductive body at the through-plane management, thermal interface materials (TIMs) act as a
direction is over 1000 W/mK, which is 100 times higher than bridge to link the hotspot with cooling system to bring down
conventional TIMs. I-GT also possesses good flexibility and the junction temperature of power modules in electronic
can be easily compressed over 100% at Z direction upon small devices [1]. Today, the widely used TIMs in the electronics
applied pressures. Therefore, fully contact between two industry are composed of high thermal conductive filler
surfaces can be achieved by using I-GT as gap fillers. The enhanced polymer matrix, Such formulas have the great
minimum thermal resistance measured for I-GTs reaches advantages of high reliability, cost efficient and ease to use
about 30 Kmm2/W, which is much lower than most of the [2], [3]. However, their thermal conductivity (K) at through-
conventional TIMs. To ensure fully electrical insulation, a
smooth and soft adhesive layer with a thickness of few microns
plane direction is usually limited within 10 W/mK, and in
was coated on the surface of I-GT. The breakdown voltage of I- most cases, is about 4 or 5 W/mK. Such low thermal
GT reaches up to 950 V. Thermal cycling test shows the highly conductivity of the conventional TIMs is strongly related to
stable nature of I-GT. The good compressibility and elasticity the large thermal contact resistance formed between
of I-GT ensures continued proper TIM contact with substrates, individual particle fillers of TIMs [4]. Therefore, it is highly
which counteracts the effect of internal stress induced by the essential to develop new solutions to address the fast
mismatch of coefficient of thermal expansion (CTE) during
temperature cycling. In addition, the I-GT has the advantages
1565
a 200 a
I-GT (VG = 30%) 1000 950 V
I-GT (VG = 65%)
Compression ratio (%)
150
Voltage (V)
100 500
50
0
0 0 500 1000 1500 2000 2500 3000 3500
0 200 400 600 800 Time (S)
Applied pressure (KPa)
b 400 b 3
I-GT (VG = 30%)
Thermal resistance (Kmm2/W)
200
1
100
0
0 50 100 150 200 250 300 350 400 450 0
0 2 4 6 8 10
Applied pressure (KPa) Time (s)
Figure 2. (a) Compression ratio changes of I-GT with different VG
Figure 3. (a) Breakdown voltage of the I-GT film. (b) Shear strength curve
proportions as a funtion of pressures. (b) Thermal resistance change of I-
of the I-GT film.
GT with different VG propotions at different pressures
results showed that the composite is highly elastic at the proportion of 65% exhibited a large thermal resistance value
through-plane direction. However, electronic devices have of 358 Kmm2/W before pressing, which was about 4 times
limitations on the applied pressures for TIM bonding (400 higher than that of I-GT (VG = 30%) (96 Kmm2/W). With
KPa) to prevent the functional components from damages. the applied pressure increased, both samples showed a
The compression ratio of I-GT samples with a large VG significant decrease of thermal resistance. When pressure
proportion above than 65% is less than 20% within 400 KPa, reached to 425 KPa, the resistance values of I-GT (VG =
which is difficult to reduce thermal contact resistance at 65%) and I-GT (VG = 30%) are 94 Kmm2/W and 30
interfaces. As a comparison, I-GT (VG = 30%) exhibits high Kmm2/W, respectively. The small thermal resistance value
softness and shows a large compression ratio around 100% of I-GT (VG = 30%) in the measured pressure range was
in the pressure range of 400KPa. After releasing the attributed to the high softness of I-GT structure which
pressure, the sample thickness can be recovered partially till enabled the composite to decrease the contact thermal
to 80% of original thickness. We believe that the 20% of resistance significantly at interfacial areas.
permanent structural deformation of I-GT (VG = 30%) was T o a vo id p o te n t ia l r i s k s o f s ho r t c ir c u it a nd
caused by the spontaneously bending and folding processes contaminations, the surface of I-GT film needs to be
of the vertical graphene structure in the first pressing. protected by insulation layers. To meet this goal, a thermal
Thermal resistance of I-GT samples with different VG plastic polymer was coated on the surface of I-GT. It has the
proportions were measured by using ASTM D5470 advantages of highly electrical insulation, strong bonding
equipment. The thickness of all measured samples is 2 mm. and good elasticity. The thickness of the protective layer is
The applied pressure was varied in the range of 450 KPa. As 4m. Figure 3a shows the breakdown voltage of the I-GT
shown in Figure 2b, the I-GT sample with a large VG film. The maximum breakdown voltage that the I-GT film
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a a
Figure 4. (a) Thermal reliability curve of I-GT in 500 cycles of thermal Figure 5. (a) The sketch of the home-made thermal testing platform (b) IR
cycling tests. (b) Pump-out demonstrators of different thermal interface images of the working temperature of the heater by using different TIMs,
materials, including thermal pad, thermal grease and I-GT. including direct contact, thermal pad, thermal grease and I-GT.
can stand reaches to 950V. By increasing the temperature
repeated powering up and down processes during the usage
above than 100oC, the protective layer can form bonding
with variety of substrates, including ceramic, metal, glass, can also generate a similar effect as the above motions
and polymer. Figure 3b shows the bonding strength of the I- which lead to the increase of thermal resistance and reduce
the lifetime of the power modules. However, with the same
GT between two pieces of copper substrates. Shear strength
pressure, I-GT did not show any structural change at the in-
was measured by using a shear tester. The maximum shear
plane directions. The main structural deformation of I-GT
strength that the protective layer can provide is about2.3
was only taken place at the vertical directions in the forms
MPa, which reaches the same level of mechanical
performance as the commonly used acrylic double-side of bending and folding of the vertical graphene structures.
This advantage of I-GT can benefit improving the long-term
tapes.
thermal reliability of power devices and thereby improving
Thermal reliability of the I-GT was investigated further in their lifetime.
a thermal cycling oven at the temperature range of -20oC to
Light weight is another important advantage of I-GT
125oC. To simulate the actual application environment, the
material compared to most of commercial TIMs, The
I-GT sample with a thickness of 200 m was used as a TIM
layer between two pieces of copper plates (shown in the density of I-GT (VG = 30%) was measured to be 0.6 g/cm3,
It is only half of the common paste TIMs and also one-
insert image of Fig. 5a). Thermal resistance was measured
fifteenth of copper.
by using laser-flash equipment. Figure 4a shows the thermal
resistance variation of FSCs in total 500 thermal cycles. A thermal testing platform was built to demonstrate the
Notably, the thermal resistance remained constant around 15 heat dissipation performance of I-GTs. Two types of
Kmm 2 /W. It shows the excellent thermal-mechanical commercial TIMs, including thermal pad with a thermal
stability of I-GT during the temperature cycling test. The conductivity of 3 W/mK and thermal grease with a thermal
good stability of I-GT is mainly attributed to the flexible conductivity of 2 W/mK, were also used as comparisons. A
nature of the material which benefits on absorbing the inner control group shows the heat dissipation situation of the
stress caused by the mismatch of coefficient of thermal thermal testing platform without using any TIMs. As shown
expansion (CTE). In addition, the unique vertical graphene in Fig. 5a. All tested TIMs were added between a heater and
structure of I-GT benefits on solving the pump-out and dry- a heatsink equipped with a cooling fan. The operating power
out failures existing in most of common TIMs. As shown in of the heater and cooling fan were 3.57 W and 0.57 W
Figure 4b, thermal pad and thermal paste exhibited obvious respectively. The working temperatures of the heater were
extrusion phenomenons upon pressing. In electronic devices, recorded by using a thermal imaging camera when the
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testing platform reached to the equilibrium state. As shown [6] Y. Xu, D. D. L. Chung, and C. Mroz, “Thermally conducting
aluminum nitride polymer-matrix composites,” Compos. Part Appl.
in Fig. 5b, the control group that heater had a direct contact
Sci. Manuf., vol. 32, no. 12, pp. 1749–1757, Dec. 2001.
with the heatsink presented the highest surface temperature [7] S.-Y. Fu, X.-Q. Feng, B. Lauke, and Y.-W. Mai, “Effects of particle
of 115oC. Obvious decreases on the working temperature size, particle/matrix interface adhesion and particle loading on
were detected in the rest three samples. In cases of thermal mechanical properties of particulate–polymer composites,” Compos.
Part B Eng., vol. 39, no. 6, pp. 933–961, Sep. 2008.
pad and thermal grease, the working temperatures of heater
were stabilized at 90oC and 44oC respectively. The much
decreased working temperature in the thermal grease sample
was attributed to its much lower contact resistance than the
thermal pad sample. For the I-GT sample, it showed the
lowest working temperature compared to the rest three
samples, which was only 32oC. It is 83oC less than that of
the control group. The temperature difference between the
heater and ambient was only about 7o due to the fast heat
dissipation property of I-GTs.
IV. CONCLUSIONS
In summary, I-GT was developed as a novel TIM for
addressing thermal management issues in many high power
density devices. I-GT has the advantages of light-weight,
electrically insulation, good compressibility and high
thermal conductivity. The developed I-GT demonstrated
superior thermal-mechanical stability in long-term reliability
study which is highly essential for prolonging the lifetime of
electronic devices. The resulting I-GTs thus offers new
solutions for addressing thermal management issues in high
power electronics and other systems with small form-factor.
ACKNOWLEDGMENT
We thank for the financial support from the Swedish
Foundation for Strategic Research (SSF) (No SE13-0061),
Swedish National Board for Innovation (Vinnova) Graphene
SIO-Agenda Program, Formas program on graphene
enhanced composite as well as from the Production Area of
Advance at Chalmers University of Technology, Sweden.
Thanks for the financial support from the Ministry of
Science and Technology of China (No: 2017YFB040600)
and Chinese national Science foundation project (No:
51872182)
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