電子學一 ch 3_ BJT 電晶體 (問題練習)

1. 解釋下列名詞：
a. Draw the symbol and construction of a PNP Transistor.？

b. Explains transistor's structure similar two back to back diodes, but actually has the electric current
amplification.

c. Define the conditions for cutoff, forward-active mode, and saturation mode for a PNP bipolar
transistor.

d. How can the Q-point be stabilized against variations in transistor parameters?

e. Describe the general current–voltage characteristics for the NPN bipolar transistors.

f. Explain the Early Effect in BJT.

g. State the relationships between collector, emitter, and base currents in a bipolar transistor biased in the
forward-active mode.

2. In a bipolar transistor biased in the forward-active mode, the base current is iB = 6.0 μA and the collector
current is iC = 510 μA. Determine β, α, and iE.

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3. A bipolar transistor is biased in the forward-active mode. The measured parameters are iC = 1.12 mA and β =
120. Determine iB, iE , and α.

4. An npn transistor with β = 80 is connected in a common-base configuration as shown in following. (a) The
emitter is driven by a constant-current source with IE = 1.2 mA. Determine IB, IC, α, and VC . (c) Is the
transistor biased in the forward-active mode?

5. Consider the circuit shown in following, where RC =5KΩ and RB = 233KΩ. The transistor parameters are β

= 100, VBE(on)=0.7V. (a) Determine IB, IC, and VC . (b) Is the transistor biased in the forward-active mode?

IB =(24-0.7)/233k=0.1mA, Ic=β =10mA,24-10m*5K=-26V(不合), Ic=(24-0.2)/5k=4.76mA,

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6. An NPN transistor has a reverse-saturation current of IS = 10−13 A, and a current gain of β = 90. The
transistor is biased at vBE = 0.685 V. Determine IE, IC , and IB.

7. Consider the circuit shown in following. Determine IE, IC , β, and VEC.

8. Consider the circuit shown in following. The transistor parameters are β = 100, VBE(on)=0.7V. Determine IB,

IC , and VEC .
Vcc=12V

R1  RE 
15k 0.5k

vo
vi R2  RC 
RL 
85k 4k
2k

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9 . Consider the circuit shown in following. Determine IE, IC, IB, and VCB.

10 Consider the circuit shown in following. Determine IE, IC, IB, and VCE.

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11. Consider the circuit shown in following. The transistor parameters are β = 80, VEB (on)=0.7V. Determine IC

and IB.

Vcc=12V

R1  RE 
15k 0.5k

vo
R2  RC 
vs
85k 4k RL 
2k

12. Consider the circuit shown in following. The value of the input voltage is Vi =15V. Determine Vo.

13. Consider the circuit shown in following. Determine IE and VE.

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14. Consider the circuit shown in following. Determine the base voltage VB.

15. Consider the circuit shown in following. The measured value of the emitter voltage is VC = 4 V. Determine
RB.